Strain Engineering of Octahedral Rotations and Physical Properties of SrRuO3 Films

Highly Energy-Efficient Spin Current Generation in SrIrO3 by Manipulating the Octahedral Rotation

Materials with strong spin-orbit coupling (SOC) have been continuously attracting intensive attention due to their promising application in energy-efficient, high-density, and nonvolatile spintronic devices. Particularly, transition-metal perovskite oxides with strong SOC have been demonstrated to exhibit efficient charge-spin interconversion. In this study, we systematically investigated the impact of epitaxial strain on the spin-orbit torque (SOT) efficiency in the SrIrO3(SIO)/Ni81Fe19(Py) bilayer. The results reveal that the SOT efficiency is strongly related to the octahedral rotation around the in-plane axes of the single-crystal SIO. By modulating the epitaxial strain using different substrates, the SOT efficiency can be remarkably improved from 0.15 to 1.45. This 10-fold enhancement of SOT efficiency suggests that modulating the epitaxial strain is an efficient approach to control the SOT efficiency in complex oxide-based heterostructures. Our work may have the potential to advance the application of complex oxides in energy-efficient spintronic devices.

Nanoscale Enhancement of the Local Optical Conductivity near Cracks in Metallic SrRuO3 Film

Cracking has been recognized as a major obstacle degrading material properties, including structural stability, electrical conductivity, and thermal conductivity. Recently, there have been several reports on the nanosized cracks (nanocracks), particularly in the insulating oxides. In this work, we comprehensively investigate how nanocracks affect the physical properties of metallic SrRuO₃ (SRO) thin films. We grow SRO/SrTiO₃ (STO) bilayers on KTaO₃ (KTO) (001) substrates, which provide +1.7% tensile strain if the SRO layer is grown epitaxially. However, the SRO/STO bilayers suffer from the generation and propagation of nanocracks, and then, the strain becomes inhomogeneously relaxed. As the thickness increases, the nanocracks in the SRO layer become percolated, and its dc conductivity approaches zero. Notably, we observe an enhancement of the local optical conductivity near the nanocrack region using scanning-type near-field optical microscopy. This enhancement is attributed to the strain relaxation near the nanocracks. Our work indicates that nanocracks can be utilized as promising platforms for investigating local emergent phenomena related to strain effects.

Dislocation-tuned ferroelectricity and ferromagnetism of the BiFeO3/SrRuO3 interface

Misfit dislocations at a heteroepitaxial interface produce huge strain and, thus, have a significant impact on the properties of the interface. Here, we use scanning transmission electron microscopy to demonstrate a quantitative unit-cell-by-unit-cell mapping of the lattice parameters and octahedral rotations around misfit dislocations at the BiFeO3/SrRuO3 interface. We find that huge strain field is achieved near dislocations, i.e., above 5% within the first three unit cells of the core, which is typically larger than that achieved from the regular epitaxy thin-film approach, thus significantly altering the magnitude and direction of the local ferroelectric dipole in BiFeO3 and magnetic moments in SrRuO3 near the interface. The strain field and, thus, the structural distortion can be further tuned by the dislocation type. Our atomic-scale study helps us to understand the effects of dislocations in this ferroelectricity/ferromagnetism heterostructure. Such defect engineering allows us to tune the local ferroelectric and ferromagnetic order parameters and the interface electromagnetic coupling, providing new opportunities to design nanosized electronic and spintronic devices.

Charge transfer and metal-insulator transition in (CrO2)m/(TaO2)nsuperlattices

Various interfacial emergent phenomena have been discovered in tunable nanoscale materials, especially in artificially designed epitaxial superlattices. In conjunction, the atomically fabricated superlattices have exhibited a plethora of exceptional properties compared to either bulk materials separately. Here, the (CrO₂)_m/(TaO₂)_nsuperlattices composed of two lattice-matched metallic metal oxides are constructed. With the help of first-principle density-functional theory calculations, a computational and theoretical study of (CrO₂)_m/(TaO₂)_nsuperlattices manifests the interfacial electronic properties in detail. The results suggest that emergent properties result from the charge transfer from the TaO₂to CrO₂layers. At two special ratios of1:1and1:2betweenmandn, the superlattices undergo metal-to-insulator transition. Additionally, the bands below the Fermi level become narrower with the increasing thickness of the CrO₂and TaO₂layers. The study reveals that the electronic reconstruction at the interface of two metallic materials can generate interesting physics, which points the direction for the manipulation of functionalities in artificial superlattices or heterostructures within a few atomic layers.

Laser Irradiation-Induced Nanoscale Surface Transformations in Strontium Titanate

We studied the structural transformations and atomic rearrangements in strontium titanate (SrTiO3) via nanosecond pulsed laser irradiation-induced melting and ultrafast quenching. Using scanning transmission electron microscopy, we determine that the laser-irradiated surface in single-crystalline SrTiO3 transforms into an amorphous phase with an interposing disordered crystalline region between amorphous and ordered phases. The formation of disordered phase is attributed to the rapid recrystallization of SrTiO3 from the melt phase constrained by an epitaxial relation with the pristine region, which eases up on the surface, leading to amorphous phase formation. With electron energy-loss spectroscopic analysis, we confirm the transformation of Ti+4 to Ti+3 due to oxygen vacancy formation as a result of laser irradiation. In the disordered region, the maximum transformation of Ti+4 is observed to be 16.2 ± 0.2%, whereas it is observed to be 20.2 ± 0.2% in the amorphous region. Finally, we deduce that the degree of the disorder increases from atomically disordered to amorphous transition in SrTiO3 under laser-irradiation. The signatures of short-range ordering remain similar, leading to a comparable fingerprint of electronic structure. With these results, this study addresses the gap in understanding the atomic and electronic structure modified by pulsed laser irradiation and functionalizing pristine SrTiO3 for electronic, magnetic, and optical applications.

Topological Hall effect in SrRuO3thin films and heterostructures

Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4dand 5doxides, exotic phases can be realized with the involvement of strong spin-orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO₃thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a platform to study topological physics with correlated electrons, but also opens up new possibilities for magnetic oxides using in the low-power spintronic devices. In this review, we discuss recent observations of THE and skyrmions in the SRO film interfaced with various materials, with a focus on the electric tuning of THE. We conclude with a discussion on the directions of future research in this field.

Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3 Multilayers

Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO₃ (SRO) and multiferroic BiFeO₃ (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.

Electronic Origin of Non-Zone-Center Phonon Condensation: Octahedral Rotation as a Case Study

Unstable zone-boundary phonon modes drive atomic displacements linked to a rich array of properties. Yet, the electronic origin of the instability remains to be clearly explained. In this Letter, we propose that bonding interaction between Bloch states belonging to different wave vectors leads to such instability via the pseudo- or second-order Jahn-Teller effect. Our first-principles calculations and representation theory-based analyses show that rotations of anion coordinated octahedra, an archetypal example of zone-boundary phonon condensations, are induced by this bonding mechanism. The proposed mechanism is universal to any non-zone-center phonon condensations and could offer a general approach to understanding the origin of structural phase transitions in crystals.

Modulation of Spin-Orbit Torque from SrRuO3 by Epitaxial-Strain-Induced Octahedral Rotation

Spin-orbit torque (SOT), which arises from the spin-orbit coupling of conduction electrons, is believed to be the key route for developing low-power, high-speed, and nonvolatile memory devices. Despite the theoretical prediction of pronounced Berry phase curvatures in certain transition-metal perovskite oxides, which lead to considerable intrinsic spin Hall conductivity, SOT from this class of materials has rarely been reported until recently. Here, the SOT generated by epitaxial SrRuO₃ of three different crystal structures is systematically studied. The results of both spin-torque ferromagnetic resonance and in-plane harmonic Hall voltage measurements concurrently reveal that the intrinsic SOT efficiency of SrRuO₃ decreases when the epitaxial strain changes from tensile to compressive. The X-ray diffraction data demonstrate a strong correlation between the magnitude of SOT and octahedral rotation around the in-plane axes of SrRuO₃ , consistent with the theoretical prediction. This work offers new possibilities of tuning SOT with crystal structures and novel opportunities of integrating the unique properties of perovskite oxides with spintronic functionalities.

Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain

Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as the intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO₃ thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of the Ru magnetic moment in real space of a tensile-strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in noncoplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO₃ systems but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials.

Current-induced magnetization switching in all-oxide heterostructures

The electrical switching of magnetization through spin-orbit torque (SOT)¹ holds promise for application in information technologies, such as low-power, non-volatile magnetic memory. Materials with strong spin-orbit coupling, such as heavy metals^2-4 and topological insulators^5,6, can convert a charge current into a spin current. The spin current can then execute a transfer torque on the magnetization of a neighbouring magnetic layer, usually a ferromagnetic metal like CoFeB, and reverse its magnetization. Here, we combine a ferromagnetic transition metal oxide⁷ with an oxide with strong spin-orbit coupling⁸ to demonstrate all-oxide SOT devices. We show current-induced magnetization switching in SrIrO₃/SrRuO₃ bilayer structures. By controlling the magnetocrystalline anisotropy of SrRuO₃ on (001)- and (110)-oriented SrTiO₃ (STO) substrates, we designed two types of SOT switching schemes. For the bilayer on the STO(001) substrate, a magnetic-field-free switching was achieved, which remained undisturbed even when the external magnetic field reached 100 mT. The charge-to-spin conversion efficiency for the bilayer on the STO(110) substrate ranged from 0.58 to 0.86, depending on the directionality of the current flow with respect to the crystalline symmetry. All-oxide SOT structures may help to realize field-free switching through a magnetocrystalline anisotropy design.

Magnetic Properties of Epitaxially Grown SrRuO3 Nanodots

We present the fabrication and exploration of arrays of nanodots of SrRuO₃ with dot sizes between 500 and 15 nm. Down to the smallest dot size explored, the samples were found to be magnetic with a maximum Curie temperature T_C achieved by dots of 30 nm diameter. This peak in T_C is associated with a dot-size-induced relief of the epitaxial strain, as evidenced by scanning transmission electron microscopy.

Photostriction of strontium ruthenate

Transition metal oxides with a perovskite crystal structure exhibit a variety of physical properties associated with the lattice. Among these materials, strontium ruthenate (SrRuO₃) displays unusually strong coupling of charge, spin and lattice degrees of freedom that can give rise to the photostriction, that is, changes in the dimensions of material due to the absorption of light. In this study, we observe a photon-induced strain as high as 1.12% in single domain SrRuO₃, which we attribute to a nonequilibrium of phonons that are a result of the strong interaction between the crystalline lattice and electrons excited by light. In addition, these light-induced changes in the SrRuO₃ lattice affect its electrical resistance. The observation of both photostriction and photoresistance in SrRuO₃ suggests the possibility of utilizing the mechanical and optical functionalities of the material for next-generation optoelectronics, such as remote switches, light-controlled elastic micromotors, microactuators and other optomechanical systems.

Light-induced deformation known as photostriction could be used for green energy devices but in most materials the effect is too small to be of practical use. Here, Wei et al. study the photostriction of strontium ruthenate and find photon-induced strain efficiencies of more than one percent.

Epitaxial-strain-induced polar-to-nonpolar transitions in layered oxides

Epitaxial strain can induce collective phenomena and new functionalities in complex oxide thin films. Strong coupling between strain and polar lattice modes can stabilize new ferroelectric phases from nonpolar dielectrics or enhance electric polarizations and Curie temperatures. Recently, strain has also been exploited to induce novel metal-insulator transitions and magnetic reconstructions through its coupling to nonpolar modes, including rotations of BO6 transition-metal octahedra. Although large strains are thought to induce ferroelectricity, here we demonstrate a polar-to-nonpolar transition in (001) films of layered A3B2O7 hybrid-improper ferroelectrics with experimentally accessible biaxial strains. We show the origin of the transition originates from the interplay of trilinear-related lattice mode interactions active in the layered oxides, and those interactions are directly strain tunable. Our results call for a careful re-examination of the role of strain-polarization coupling in ferroelectric films with nontrivial anharmonicities and offer a route to search for new functionalities in layered oxides.