Two-Dimensional Pnictogen Honeycomb Lattice: Structure, On-Site Spin-Orbit Coupling and Spin Polarization

Two-Dimensional Materials for Highly Efficient and Stable Perovskite Solar Cells

Perovskite solar cells (PSCs) offer low costs and high power conversion efficiency. However, the lack of long-term stability, primarily stemming from the interfacial defects and the susceptible metal electrodes, hinders their practical application. In the past few years, two-dimensional (2D) materials (e.g., graphene and its derivatives, transitional metal dichalcogenides, MXenes, and black phosphorus) have been identified as a promising solution to solving these problems because of their dangling bond-free surfaces, layer-dependent electronic band structures, tunable functional groups, and inherent compactness. Here, recent progress of 2D material toward efficient and stable PSCs is summarized, including its role as both interface materials and electrodes. We discuss their beneficial effects on perovskite growth, energy level alignment, defect passivation, as well as blocking external stimulus. In particular, the unique properties of 2D materials to form van der Waals heterojunction at the bottom interface are emphasized. Finally, perspectives on the further development of PSCs using 2D materials are provided, such as designing high-quality van der Waals heterojunction, enhancing the uniformity and coverage of 2D nanosheets, and developing new 2D materials-based electrodes.

Unveiling excitons in two-dimensional β -pnictogens

In this paper, we investigate the optical, electronic, vibrational, and excitonic properties of four two-dimensional β -pnictogen materials-nitrogenene, phosphorene, arsenene, and antimonene-via density functional theory calculations and the Bethe-Salpeter equation. These materials possess indirect gaps with significant exciton binding energies, demonstrating isotropic behavior under circular light polarization and anisotropic behavior under linear polarization by absorbing light within the visible solar spectrum (except for nitrogenene). Furthermore, we observed that Raman frequencies red-shift in heavier pnictogen atoms aligning with experimental observations; simultaneously, quasi-particle effects notably influence the linear optical response intensively. These monolayers' excitonic effects lead to optical band gaps optimized for solar energy harvesting, positioning them as promising candidates for advanced optoelectronic device applications.

Mechanical characteristics and failure behavior of puckered and buckled allotropes of antimonene nanotubes: a molecular dynamics study

In recent years, antimonene nanotubes have attracted considerable interest for diverse applications owing to their promising physical properties. In this study, classical molecular dynamics simulations with Stillinger-Weber potential were carried out to explore the fundamental mechanical characteristics of two stable allotropes of antimonene nanotubes (SbNTs), namely puckered (α-) and buckled (β-) nanotubes. Mechanical properties and deformation mechanisms of antimonene nanotubes, including ultimate tensile strength, fracture strain, and Young's modulus, were thoroughly examined by considering chirality, diameter, temperature, and strain rate variables. Numerical simulations revealed that all SbNT specimens examined in this study exhibit brittle failures with a complete loss of load-bearing capability following the ultimate stress level. The brittle nature of the SbNTs with varied diameters remained unchanged under different temperatures and loading-rate conditions. Owing to their distinct crystal structure in the armchair and zigzag directions, α-SbNTs present a distinctive anisotropic behavior compared to β-SbNTs. While the variation of the elastic modulus with temperature is not notable, the tensile strength and fracture strain of SbNTs deteriorated considerably at high temperatures. Furthermore, it was observed that the effects of diameter and temperature on zigzag α-SbNT are more pronounced due to its lower stability. Altogether, this study presents a comprehensive examination of the mechanical characteristics of the two stable antimonene allotropes and provides useful information for their potential utilizations in a wide range of applications.

Emerging 2D pnictogens: a novel multifunctional photonic nanoplatform for cutting-edge precision treatment

The elements of the pnictogen group, known as the 15th (VA) family in the periodic table, including phosphorus (P), arsenic (As), antimony (Sb) and bismuth (Bi), have been widely used by alchemists to treat various diseases since ancient times and hold a pivotal position in the history of medicine, owing to their diverse pharmacological activities. Recently, with the development of modern nanotechnology, pnictogen group elements appear in a more innovative form, namely two-dimensional (2D) pnictogens (i.e. phosphorene, arsenene, and bismuthene) with a unique layered crystal structure and extraordinary optoelectronic characteristics, which endow them with significant superiority as a novel multifunctional photonic nanoplatform for cutting-edge precision treatment of various diseases. The puckered layer structure with ultralarge surface area make them ideal drug and gene delivery vectors that can avoid degradation and reduce target effects. The anisotropic morphology allows their easier internalization by cells and may improve gene transfection efficiency. Tunable optoelectronic characteristics endow them with excellent phototherapy performance as well as the ability to act as an optical switch to initiate subsequent therapeutic events. This review provides a brief overview of the properties, preparation and surface modifications of 2D pnictogens, and then focuses on its applications in cutting-edge precision treatment as a novel multifunctional photonic nanoplatform, such as phototherapy, photonic medicine, photo-adjuvant immunotherapy and photo-assisted gene therapy. Finally, the challenges and future development trends for 2D pnictogens are provided. With a focus on 2D pnictogen-based multifunctional photonic nanoplatforms, this review may also provide profound insights for the next generation innovative precision therapy.

Designing doping strategy in arsenene monolayer for spintronic and optoelectronic applications: a case study of germanium and nitrogen as dopants

In this work, the structural, electronic, and magnetic properties of arsenene monolayer doped with germanium (Ge) and nitrogen (N) atoms are investigated using density functional theory calculations. Pristine monolayer is dynamically stable and it possesses a wide indirect band gap. Ge doping induces magnetic semiconductor (MS) nature generated by the semiconductor behavior in both spin channels with significant spin asymmetry around the Fermi level. The dopant produces mainly magnetic properties. Upon increasing the doping concentration, different doping configurations along armchair, zigzag edges, and hexagonal ring have been proposed. The MS nature is retained with an odd number of Ge atoms, meanwhile an eVen number leads to the disappearance of magnetism. In contrast, N doping induces a gap reduction of 11.80%, preserving the non-magnetic nature. At higher doping level, different electronic features including semiconductor, nearly semimetallic, and metallic natures are obtained depending on the doping concentration and configurations. In addition, the formation energy and cohesive energy are calculated to analyze the systems' stability. Our results show that different doping arrangements induce novel features in arsenene monolayer for applications in spintronic and optoelectronic devices.

Periodicity of Two-Dimensional Bonding of Main Group Elements

In the periodic table the position of each atom follows the 'aufbau' principle of the individual electron shells. The resulting intrinsic periodicity of atomic properties determines the overall behavior of atoms in two-dimensional (2D) bonding and structure formation. Insight into the type and strength of bonding is the key in the discovery of innovative 2D materials. The primary features of 2D bonding and the ensuing monolayer structures of the main-group II-VI elements result from the number of valence electrons and the change of atom size, which determine the type of hybridization. The results reveal the tight connection between strength of bonding and bond length in 2D networks. The predictive power of the periodic table reveals general rules of bonding, the bonding-structure relationship, and allows an assessment of published data of 2D materials.

Spin-orbit coupling in buckled monolayer nitrogene

Buckled monolayer nitrogene has been recently predicted to be stable above the room temperature. The low atomic number of nitrogen atom suggests, that spin–orbit coupling in nitrogene is weak, similar to graphene or silicene. We employ first principles calculations and perform a systematic study of the intrinsic and extrinsic spin–orbit coupling in this material. We calculate the spin mixing parameter \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$b^2$$\end{document}b2, reflecting the strength of the intrinsic spin–orbit coupling and find, that \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$b^2$$\end{document}b2 is relatively small, on the order of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$10^{-6}$$\end{document}10-6. It also displays a weak anisotropy, opposite for electrons and holes. To study extrinsic effects of spin–orbit coupling we apply a transverse electric field enabling spin–orbit fields \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Omega$$\end{document}Ω. We find, that \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Omega$$\end{document}Ω are on the order of a single \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mu$$\end{document}μeV in the valence band, and tens to a hundred of \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\mu$$\end{document}μeV in the conduction band, depending on the applied electric field. Similar to \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$b^2$$\end{document}b2, \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\Omega$$\end{document}Ω is also anisotropic, in particular for the conduction electrons.

Chemistry, Functionalization, and Applications of Recent Monoelemental Two-Dimensional Materials and Their Heterostructures

The past decades have witnessed a rapid expansion in investigations of two-dimensional (2D) monoelemental materials (Xenes), which are promising materials in various fields, including applications in optoelectronic devices, biomedicine, catalysis, and energy storage. Apart from graphene and phosphorene, recently emerging 2D Xenes, specifically graphdiyne, borophene, arsenene, antimonene, bismuthene, and tellurene, have attracted considerable interest due to their unique optical, electrical, and catalytic properties, endowing them a broader range of intriguing applications. In this review, the structures and properties of these emerging Xenes are summarized based on theoretical and experimental results. The synthetic approaches for their fabrication, mainly bottom-up and top-down, are presented. Surface modification strategies are also shown. The wide applications of these emerging Xenes in nonlinear optical devices, optoelectronics, catalysis, biomedicine, and energy application are further discussed. Finally, this review concludes with an assessment of the current status, a description of existing scientific and application challenges, and a discussion of possible directions to advance this fertile field.

Phonon spectrum and thermoelectric properties of square/octagon structure of bismuth monolayer

First-principles calculation and Boltzmann transport theory have been combined to comparatively investigate the band structure, phonon spectrum, lattice thermal conductivity, electronic transport property, Seebeck coefficient, and figure of merit of square/octagon (s/o)-bismuth monolayer. Calculations reveal that the thermoelectric properties of s/o-bismuth monolayer are better than that of β-bismuth monolayer, which should be mainly due to the low lattice thermal conductivity and weakened coupling of electrons and phonons. It is also found that the phonon frequency and group velocity could play dominant roles in determining the magnitude of the lattice thermal conductivity of s/o-bismuth monolayer. Furthermore, the Seebeck coefficient and figure of merit of s/o-bismuth monolayer are higher than those of β-bismuth monolayer. The derived results are in good agreement with other theoretical results in the literature, and could provide a deep understanding of thermoelectric properties of the bismuth monolayer materials.

First-principles calculation and Boltzmann transport theory have been combined to comparatively investigate the electronic structure, phonon spectrum, and thermoelectric properties of square/octagon (s/o)-bismuth monolayer.

Thickness of elemental and binary single atomic monolayers

The thickness of monolayers is a fundamental property of two-dimensional (2D) materials that has not found the necessary attention. It plays a crucial role in their mechanical behavior, the determination of related physical properties such as heat transfer, and especially the properties of multilayer systems. Measurements of the thickness of free-standing monolayers are widely lacking and notoriously too large. Consistent thicknesses have been reported for single layers of graphene, boronitrene, and SiC derived from interlayer spacing measured by X-ray diffraction in multilayer systems, first-principles calculations of the interlayer spacing, and tabulated van der Waals (vdW) diameters. Furthermore, the electron density-based volume model agrees with the geometric slab model for graphene and boronitrene. For other single-atom monolayers DFT calculations and molecular dynamics (MD) simulations deliver interlayer distances that are often much smaller than the vdW diameter, owing to further electrostatic and (weak) covalent interlayer interaction. Monolayers strongly bonded to a surface also show this effect. If only weak vdW forces exist, the vdW diameter delivers a reasonable thickness not only for free-standing monolayers but also for few-layer systems and adsorbed monolayers. Adding the usually known corrugation effect of buckled or puckered monolayers to the vdW diameter delivers an upper limit of the monolayer thickness. The study presents a reference database of thickness values for elemental and binary group-IV and group-V monolayers, as well as binary III-V and IV-VI compounds.

The Rise of 2D Photothermal Materials beyond Graphene for Clean Water Production

Water shortage is one of the most concerning global challenges in the 21st century. Solar-inspired vaporization employing photothermal nanomaterials is considered to be a feasible and green technology for addressing the water challenge by virtue of abundant and clean solar energy. 2D nanomaterials aroused considerable attention in photothermal evaporation-induced water production owing to their large absorption surface, strong absorption in broadband solar spectrum, and efficient photothermal conversion. Herein, the recent progress of 2D nanomaterials-based photothermal evaporation, mainly including emerging Xenes (phosphorene, antimonene, tellurene, and borophene) and binary-enes (MXenes and transition metal dichalcogenides), is reviewed. Then, the optimization strategies for higher evaporation performance are summarized in terms of modulation of the intrinsic photothermal performance of 2D nanomaterials and design of the complete evaporation system. Finally, the challenges and prospective of various kinds of 2D photothermal nanomaterials are discussed in terms of the photothermal performance, stability, environmental influence, and cost. One important principle is that solutions for water challenges should not introduce new environmental and social problems. This Review aims to highlight the role of 2D photothermal nanomaterials in solving water challenges and provides a viable scheme toward the practical use in photothermal materials selection, design, and evaporation systems building.

Binary Phosphorene Redox Behavior in Oxidoreductase Enzymatic Systems

Phosphorene is a two-dimensional material that has many advantageous electronic, electrochemical, and optical properties. However, phosphorene possesses a relatively poor stability in ambient atmosphere. This disadvantage limits its application in several systems and particularly in electrochemical biosensors. Here we evaluate phosphorene as an electrochemical biosensing platform in two different mediator-based oxidoreductase enzymatic systems (glucose oxidase (GOx) and peroxidase from horseradish (HRP)), in which their detection is based on the reduction or oxidation of a mediator. In both cases, the used mediator is the same, ferrocene methanol (FcMeOH). Enhanced electrochemical activity is observed only in the reductive system (HRP-based biosensor) when compared to the oxidative counterpart (GOx-based biosensor). This phenomenon is attributed to the fact that in a reductive environment the phosphorene structure remains intact, while in an oxidative potential, the phosphorene is readily oxidized. In this way, the electroactivity of phosphorene as a sensing platform is strongly dependent on the type of mediator-based enzymatic system. These findings of binary nature of phosphorene are of high importance for construction of phosphorene-sensing platforms and in the development of enzyme logic systems.

Stabilities and novel electronic structures of three carbon nitride bilayers

We predict three novel phases of the carbon nitride (CN) bilayer, denoted α-C2N2, β-C2N2 and γ-C4N4, respectively. All of them consist of two CN sheets connected by C-C covalent bonds. The phonon dispersions reveal that all these phases are dynamically stable, because no imaginary frequency is present. The transition pathway between α-C2N2 and β-C2N2 is investigated, which involves bond-breaking and bond-reforming between C and N. This conversion is difficult, since the activation energy barrier is 1.90 eV per unit cell, high enough to prevent the transformation at room temperature. Electronic structure calculations show that all three phases are semiconductors with indirect band gaps of 3.76/5.22 eV, 4.23/5.75 eV and 2.06/3.53 eV, respectively, by PBE/HSE calculation. The β-C2N2 has the widest band gap among the three phases. All three bilayers can become metallic under tensile strain, and the indirect gap of γ-C4N4 can turn into a direct one. γ-C4N4 can become an anisotropic Dirac semimetal under uniaxial tensile strain. Anisotropic Dirac cones with high Fermi velocity of the order of 105 m/s appear under 12% strain. Our results suggest that the three two-dimensional materials have potential applications in electronics, semiconductors, optics and spintronics.

Recent Progress in Two-Dimensional Nanomaterials for Laser Protection

The Nobel Prize in Physics 2018, “For groundbreaking inventions in the field of laser physics”, went to Arthur Ashkin and Gérard Mourou and Donna Strickland. Their inventions have revolutionized laser physics and greatly promoted the development of laser instruments, which have penetrated into many aspects of people’s daily lives. However, for the purpose of protecting human eyes or optical instruments from being damaged by both pulsed and continuous wave laser radiation, the research on laser protective materials is of particular significance. Due to the intriguing and outstanding physical, chemical, and structural properties, two-dimensional (2D) nanomaterials have been extensively studied as optical limiting (OL) materials owing to their broadband nonlinear optical (NLO) response and fast carrier relaxation dynamics that are important for reducing the laser intensity. This review systematically describes the OL mechanisms and the recent progress in 2D nanomaterials for laser protection.

Effects of low dimensionality on electronic structure and thermoelectric properties of bismuth

First-principles calculations and Boltzmann transport theory have been combined to comparatively investigate the band structure, phonon spectrum, lattice thermal conductivity, electronic transport properties, Seebeck coefficients, and figure of merit of the β-bismuth monolayer and bulk Bi. Calculation reveals that low dimensionality can bring about the semimetal-semiconductor transition, decrease the lattice thermal conductivity, and increase the Seebeck coefficient of Bi. The relaxation time of electrons and holes is calculated according to the deformation potential theory, and is found to be more accurate than those reported in the literature. It is also shown that compared with Bi bulk, the β-bismuth monolayer possesses much lower electrical conductivity and electric thermal conductivity, while its figure of merit seems much bigger. The derived results are in good agreement with experimental results in the literature, and could provide a deep understanding of various properties of the β-bismuth monolayer.

First-principles calculations and Boltzmann transport theory have been combined to comparatively investigate the band structure, phonon spectrum, lattice thermal conductivity, and the transport properties of the β-bismuth monolayer and bulk Bi.

Structure dependent optoelectronic properties of monolayer antimonene, bismuthene and their binary compound

The absorption spectra of antimonene, bismuthene, and their BiSb binary compound are revealed.

Optical properties of monolayer bismuthene in electric fields

Optical excitations of monolayer bismuthene present very rich and unique absorption spectra. The optical energy gap corresponding to the threshold frequency is not equal to an indirect energy gap, and it becomes zero under the critical electric field. The frequency, number, intensity, and form of the absorption structures are dramatically changed when an external electric field is applied. The prominent peaks and the observable shoulders, respectively, arise from the constant-energy loop and the band-edge states of parabolic dispersions. These directly reflect the unusual electronic properties, being very different from those in monolayer graphene. The novel optical properties of bismuthine that are easily manipulated by electric fields may find a lot of various applications in optoelectronics, either combined with or complementary to those graphene-based systems.

Semimetal-Semiconductor Transitions for Monolayer Antimonene Nanosheets and Their Application in Perovskite Solar Cells

Antimonene-based 2D materials are attracting increasing research interest due to their superior physicochemical properties and promising applications in next-generation electronics and optoelectronics devices. However, the semiconductor properties of antimonene are still at the theoretical simulation stage and are not experimentally verified, significantly restricting its applications in specific areas. In this study, the semiconductor properties of monolayer antimonene nanosheets are experimentally verified. It is found that the obtained semiconductive antimonene nanosheets (SANs) exhibit indirect bandgap properties, with photoluminescence (PL) bandgap at about 2.33 eV and PL lifetime of 4.3 ns. Moreover, the obtained SANs are ideal for the hole extraction layer in planar inverted perovskite solar cells (PVSCs) and significantly enhance the device performance due to fast hole extraction and efficient hole transfer at the perovskite/hole transport layer interface. Overall, these findings look promising for the future prospects of antimonene in electronics and optoelectronics.

Two-Dimensional Antimonene-Based Photonic Nanomedicine for Cancer Theranostics

Antimonene (AM) is a recently described two-dimensional (2D) elemental layered material. In this study, a novel photonic drug-delivery platform based on 2D PEGylated AM nanosheets (NSs) is developed. The platform's multiple advantages include: i) excellent photothermal properties, ii) high drug-loading capacity, iii) spatiotemporally controlled drug release triggered by near-infrared (NIR) light and moderate acidic pH, iv) superior accumulation at tumor sites, v) deep tumor penetration by both extrinsic stimuli (i.e., NIR light) and intrinsic stimuli (i.e., pH), vi) excellent multimodal-imaging properties, and vii) significant inhibition of tumor growth with no observable side effects and potential degradability, thus addressing several key limitations of cancer nanomedicines. The intracellular fate of the prepared NSs is also revealed for the first time, providing deep insights that improve cellular-level understanding of the nano-bio interactions of AM-based NSs and other emerging 2D nanomaterials. To the best of knowledge, this is the first report on 2D AM-based photonic drug-delivery platforms, possibly marking an exciting jumping-off point for research into the application of 2D AM nanomaterials in cancer theranostics.

Electronic Structure and Band Gap Engineering of Two-Dimensional Octagon-Nitrogene

A new phase of nitrogen with octagon structure has been predicted in our previous study, which we referred to as octagon-nitrogene (ON). In this work, we make further investigations of its stability and electronic structures. The phonon dispersion has no imaginary phonon modes, which indicates that ON is dynamically stable. Using ab initio molecular dynamic simulations, this structure is found to be stable up to room temperature and possibly higher, and ripples that are similar to that of graphene are formed on the ON sheet. Based on the density functional theory calculation, we find that single layer ON is a two-dimension wide gap semiconductor with an indirect band gap of 4.7 eV. This gap can be decreased by stacking due to the interlayer interactions. Biaxial tensile strain and perpendicular electric field can greatly influence the band structure of ON, in which the gap decreases and eventually closes as the biaxial tensile strain or the perpendicular electric field increases. In other words, both biaxial tensile strain and a perpendicular electric field can drive the insulator-to-metal transition, and thus can be used to engineer the band gap of ON. From our results, we see that ON has potential applications in many fields, including electronics, semiconductors, optics and spintronics.

Recent progress in 2D group-VA semiconductors: from theory to experiment

This review provides recent theoretical and experimental progress in the fundamental properties, electronic modulations, fabrications and applications of 2D group-VA materials.

Tunnelling characteristics of Stone-Wales defects in monolayers of Sn and group-V elements

Topological defects in ultrathin layers are often formed during synthesis and processing, thereby strongly influencing the electronic properties of layered systems. For the monolayers of Sn and group-V elements, we report the results based on density functional theory determining the role of Stone-Wales (SW) defects in modifying their electronic properties. The calculated results find the electronic properties of the Sn monolayer to be strongly dependent on the concentration of SW defects, e.g. defective stanene has nearly zero band gap (≈0.03 eV) for the defect concentration of 2.2  ×  10¹³ cm^-2 which opens up to 0.2 eV for the defect concentration of 3.7  ×  10¹³ cm^-2. In contrast, SW defects appear to induce conduction states in the semiconducting monolayers of group-V elements. These conduction states act as channels for electron tunnelling, and the calculated tunnelling characteristics show the highest differential conductance for the negative bias with the asymmetric current-voltage characteristics. On the other hand, the highest differential conductance was found for the positive bias in stanene. Simulated STM topographical images of stanene and group-V monolayers show distinctly different features in terms of their cross-sectional views and distance-height profiles. These distinctive features can serve as fingerprints to identify the topological defects in experiments for the monolayers of group-IV and group-V elements.

Synthesis of Antimonene on Germanium

The lack of large-area synthesis processes on substrates compatible with industry requirements has been one of the major hurdles facing the integration of 2D materials in mainstream technologies. This is particularly the case for the recently discovered monoelemental group V 2D materials which can only be produced by exfoliation or growth on exotic substrates. Herein, to overcome this limitation, we demonstrate a scalable method to synthesize antimonene on germanium substrates using solid-source molecular beam epitaxy. This emerging 2D material has been attracting a great deal of attention due to its high environmental stability and its outstanding optical and electronic properties. In situ low energy electron microscopy allowed the real time investigation and optimization of the 2D growth. Theoretical calculations combined with atomic-scale microscopic and spectroscopic measurements demonstrated that the grown antimonene sheets are of high crystalline quality, interact weakly with germanium, exhibit semimetallic characteristics, and remain stable under ambient conditions. This achievement paves the way for the integration of antimonene in innovative nanoscale and quantum technologies compatible with the current semiconductor manufacturing.

Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator

Highly stable antimonene, as the cousin of phosphorene from group-VA, has opened up exciting realms in the two-dimensional (2D) materials family. However, pristine antimonene is an indirect band gap semiconductor, which greatly restricts its applications for optoelectronics devices. Identifying suitable materials, both responsive to incident photons and efficient for carrier transfer, is urgently needed for ultrathin devices. Herein, by means of first-principles computations we found that it is rather feasible to realize a new class of 2D materials with a direct bandgap and high carrier mobility, namely antimonene oxides with different content of oxygen. Moreover, these tunable direct bandgaps cover a wide range from 0 to 2.28 eV, which are crucial for solar cell and photodetector applications. Especially, the antimonene oxide (18Sb-18O) is a 2D topological insulator with a sizable global bandgap of 177 meV, which has a nontrivial Z₂ topological invariant in the bulk and the topological states on the edge. Our findings not only introduce new vitality into 2D group-VA materials family and enrich available candidate materials in this field but also highlight the potential of these 2D semiconductors as appealing ultrathin materials for future flexible electronics and optoelectronics devices.

Strain and electric field tunable electronic structure of buckled bismuthene

Based on first-principles density functional theory calculations, we systemically study the properties of two-dimensional buckled single-layer bismuth (b-bismuthene).

Two-dimensional antimonene single crystals grown by van der Waals epitaxy

Unlike the unstable black phosphorous, another two-dimensional group-VA material, antimonene, was recently predicted to exhibit good stability and remarkable physical properties. However, the synthesis of high-quality monolayer or few-layer antimonenes, sparsely reported, has greatly hindered the development of this new field. Here, we report the van der Waals epitaxy growth of few-layer antimonene monocrystalline polygons, their atomical microstructure and stability in ambient condition. The high-quality, few-layer antimonene monocrystalline polygons can be synthesized on various substrates, including flexible ones, via van der Waals epitaxy growth. Raman spectroscopy and transmission electron microscopy reveal that the obtained antimonene polygons have buckled rhombohedral atomic structure, consistent with the theoretically predicted most stable β-phase allotrope. The very high stability of antimonenes was observed after aging in air for 30 days. First-principle and molecular dynamics simulation results confirmed that compared with phosphorene, antimonene is less likely to be oxidized and possesses higher thermodynamic stability in oxygen atmosphere at room temperature. Moreover, antimonene polygons show high electrical conductivity up to 10⁴ S m⁻¹ and good optical transparency in the visible light range, promising in transparent conductive electrode applications.

Several two-dimensional materials have been synthesized to date, yet elemental materials, consisting of individual atomic species, are still scarce. Here, the authors synthesize few-layer, monocrystalline polygons of antimonene via van der Waals epitaxy growth.

Band Gap Engineering of Two-Dimensional Nitrogene

In our previous study, we have predicted the novel two-dimensional honeycomb monolayers of pnictogen. In particular, the structure and properties of the honeycomb monolayer of nitrogen, which we call nitrogene, are very unusual. In this paper, we make an in-depth investigation of its electronic structure. We find that the band structure of nitrogene can be engineered in several ways: controlling the stacking of monolayers, application of biaxial tensile strain, and application of perpendicular electric field. The band gap of nitrogene is found to decrease with the increasing number of layers. The perpendicular electric field can also reduce the band gap when it is larger than 0.18 V/Å, and the gap closes at 0.35 V/Å. A nearly linear dependence of the gap on the electric field is found during the process. Application of biaxial strain can decrease the band gap as well, and eventually closes the gap. After the gap-closing, we find six inequivalent Dirac points in the Brillouin zone under the strain between 17% and 28%, and the nitrogene monolayer becomes a Dirac semimetal. These findings suggest that the electronic structure of nitrogene can be modified by several techniques, which makes it a promising candidate for electronic devices.

Strain induced topological phase transitions in monolayer honeycomb structures of group-V binary compounds

We present first-principles calculations of electronic structures of a class of two-dimensional (2D) honeycomb structures of group-V binary compounds. Our results show these new 2D materials are stable semiconductors with direct or indirect band gaps. The band gap can be tuned by applying lattice strain. During their stretchable regime, they all exhibit metal-indirect gap semiconductor-direct gap semiconductor-topological insulator (TI) transitions with increasing strain from negative (compressive) to positive (tensile) values. The topological phase transition results from the band inversion at the Γ point which is due to the evolution of bonding and anti-bonding states under lattice strain.