Manifestation of a Second Dirac Surface State and Bulk Bands in THz Radiation from Topological Insulators

Narrowband, Angle-Tunable, Helicity-Dependent Terahertz Emission from Nanowires of the Topological Dirac Semimetal Cd3As2

All-optical control of terahertz pulses is essential for the development of optoelectronic devices for next-generation quantum technologies. Despite substantial research in THz generation methods, polarization control remains difficult. Here, we demonstrate that by exploiting band structure topology, both helicity-dependent and helicity-independent THz emission can be generated from nanowires of the topological Dirac semimetal Cd₃As₂. We show that narrowband THz pulses can be generated at oblique incidence by driving the system with optical (1.55 eV) pulses with circular polarization. Varying the incident angle also provides control of the peak emission frequency, with peak frequencies spanning 0.21-1.40 THz as the angle is tuned from 15 to 45°. We therefore present Cd₃As₂ nanowires as a promising novel material platform for controllable terahertz emission.

Directed delivery of terahertz frequency radiation from quantum cascade lasers within a dry 3He dilution refrigerator

We present a scheme for the full integration of terahertz (THz) frequency quantum cascade lasers (QCLs) within a dilution refrigerator in order to provide a directed delivery of THz power into the sample space. We describe a successful operation of a 2.68 THz QCL located on the pulse tube cooler stage of the refrigerator, with its output coupled onto a two-dimensional electron gas (2DEG) located on a milli-kelvin sample stage via hollow metal waveguides and Hysol thermal isolators, achieving a total loss from QCL to the sample of ∼-9 dB. The thermal isolators limit heat leaks to the sample space, with a base temperature of ∼210 mK being achieved. We observe cyclotron resonance (CR) induced in the 2DEG by the QCL and explore the heating impact of the QCL on all stages of the refrigerator. The CR effect induced by the THz QCL is observable at electron temperatures as low as ∼430 mK. The results show a viable route for the exploitation of THz QCLs within the environment of a dilution refrigerator and for the THz power delivery in very low-temperature (<0.5 K) condensed matter experiments.

Synthesis and characterization of a Sb2Te3/Bi2Te3 p-n junction heterostructure via electrodeposition in nanoporous membranes

Topological insulators (TIs) are bulk insulators with metallic surface states that can be described by a single Dirac cone. However, low-dimensional solids such as nanowires (NWs) are a challenge, due to the difficulty of separating surface contributions from bulk carriers. Fabrication of NWs with high surface-to-volume ratio can be realized by different methods such as chemical vapor transport, molecular beam epitaxy, and electrodeposition. The last method is used in the present work allowing the growth of structures such as p-n junctions, intercalation of magnetic or superconducting dots. We report the synthesis of high-quality TI NW: Bi₂Te₃, Sb₂Te₃ and p-n junction via electrodeposition. Structural, morphological, and nanostructure properties of NWs have been investigated by various characterization techniques. Interface structures and lateral heterojunctions (LHJ) in p-n junction NWs has also been made.

Advanced time-resolved absorption spectroscopy with an ultrashort visible/near IR laser and a multi-channel lock-in detector

Ultrashort visible-near infrared (NIR) pulse generation and its applications to ultrafast spectroscopy are discussed. Femtosecond pulses of around 800 nm from a Ti:sapphire laser are used as a pump of an optical parametric amplifier (OPA) in a non-collinear configuration to generate ultrashort visible (500-780 nm) pulses and deep-ultraviolet (DUV, 259-282 nm) pulses. The visible-NIR pulses and DUV pulses were compressed to 3.9 fs and 10.4 fs, respectively, and used to elucidate various ultrafast dynamics in condensed matter with a sub-10 fs resolution by pump-probe measurements. We have also developed a 128-channel lock-in amplifier. The combined system of the world-shortest visible pulse from the OPA and the lock-in amplifier with the world-largest channel-number can clarify the sub-10 fs-dynamics in condensed matter. This system clarified structural changes in an excited state, reaction intermediate, and a transition state. This is possible even during molecular vibration and reactions via a real-time-resolved vibronic spectrum, which provides molecular structural change information. Also, ultrafast dynamics in exotic materials like carbon nanotubes, topological insulators, and novel solar battery systems have been clarified. Furthermore, the carrier-envelope phase in the ultrashort pulse has been controlled and measured.

Femtosecond time-evolution of mid-infrared spectral line shapes of Dirac fermions in topological insulators

Mid-infrared (MIR) light sources have much potential in the study of Dirac-fermions (DFs) in graphene and topological insulators (TIs) because they have a low photon energy. However, the topological surface state transitions (SSTs) in Dirac cones are veiled by the free carrier absorption (FCA) with same spectral line shape that is always seen in static MIR spectra. Therefore, it is difficult to distinguish the SST from the FCA, especially in TIs. Here, we disclose the abnormal MIR spectrum feature of transient reflectivity changes (ΔR/R) for the non-equilibrium states in TIs, and further distinguish FCA and spin-momentum locked SST using time-resolved and linearly polarized ultra-broadband MIR spectroscopy with no environmental perturbation. Although both effects produce similar features in the reflection spectra, they produce completely different variations in the ΔR/R to show their intrinsic ultrafast dynamics.

Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2Te3 via Spin Injection

The circular photogalvanic effect (CPGE) provides a method utilizing circularly polarized light to control spin photocurrent and will also lead to novel opto-spintronic devices. The CPGE of three-dimensional topological insulator Bi₂Te₃ with different substrates and thicknesses has been systematically investigated. It is found that the CPGE current can be dramatically tuned by adopting different substrates. The CPGE current of the Bi₂Te₃ films on Si substrates are more than two orders larger than that on SrTiO₃ substrates when illuminated by 1064 nm light, which can be attributed to the modulation effect due to the spin injection from Si substrate to Bi₂Te₃ films, larger light absorption coefficient, and stronger inequivalence between the top and bottom surface states for Bi₂Te₃ films grown on Si substrates. The excitation power dependence of the CPGE current of Bi₂Te₃ films on Si substrates shows a saturation at high power especially for thicker samples, whereas that on SrTiO₃ substrates almost linearly increases with excitation power. Temperature dependence of the CPGE current of Bi₂Te₃ films on Si substrates first increases and then decreases with decreasing temperature, whereas that on SrTiO₃ substrates changes monotonously with temperature. These interesting phenomena of the CPGE current of Bi₂Te₃ films on Si substrates are related to the spin injection from Si substrates to Bi₂Te₃ films. Our work not only intrigues new physics but also provides a method to effectively manipulate the helicity-dependent photocurrent via spin injection.

Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi2Se3

The circular (CPGE) and linear photogalvanic effect (LPGE) of a three-dimensional topological insulator Bi₂Se₃ thin film of seven quintuple layers excited by near-infrared (1064 nm) and mid-infrared (10.6 [Formula: see text]m) radiations have been investigated. The comparison of the CPGE current measured parallel and perpendicular to the incident plane, together with the comparison of the CPGE current under front and back illuminations, indicates that the CPGE under front illumination of 1064 nm light is dominated by the top surface states of the Bi₂Se₃ thin film. The CPGE current excited by 10.6 [Formula: see text]m light is about one order larger than that excited by 1064 nm light, which may be attributed to the smaller cancelation effect of the CPGE generated in the two-dimensional electron gas when excited by 10.6 [Formula: see text]m light. Under the excitation of 1064 nm light, the LPGE current is dominated by the component which shows an even parity of incident angles, while the LPGE current excited by 10.6 [Formula: see text]m light is mainly contributed by the component which is an odd parity of incident angles. Both of the CPGE and LPGE currents excited by 1064 nm decrease with increasing temperature, which may be owing to the decrease of the momentum relaxation time and the stronger electron-electron scattering with increasing temperature, respectively.

Terahertz surface and interface emission spectroscopy for advanced materials

Surfaces and interfaces are of particular importance for optoelectronic and photonic materials as they are involved in many physical and chemical processes such as carrier dynamics, charge transfer, chemical bonding, transformation reactions and so on. Terahertz (THz) emission spectroscopy provides a sensitive and nondestructive method for surface or interface analysis of advanced materials ranging from graphene to transition metal dichalcogenides, topological insulators, hybrid perovskites, and mixed-dimensional heterostructures based on 2D materials. In this review paper, we start with the THz radiation mechanisms under ultrafast laser excitation. Then we concentrate on the recent progresses of THz emission spectroscopy on the surface and interface properties of advanced materials, including transient surface photocurrents, surface nonlinear polarization, surface states, interface potential, and gas molecule adsorption/desorption processes. This novel spectroscopic method can not only promote the development of new and compact THz sources, but also provide a nondestructive optical method for surface and interface characterization of photocurrent and nonlinear polarization dynamics of materials.

Possible flat band bending of the Bi1.5Sb0.5Te1.7Se1.3 crystal cleaved in an ambient air probed by terahertz emission spectroscopy

We investigate an evolution of the surface electronic state of the Bi_1.5Sb_0.5Te_1.7Se_1.3 single crystal, which is one of the most bulk insulating topological insulators, by examining terahertz light emitted from the sample surface upon the illumination of the near-infrared femtosecond laser pulses. We find that the surface state with a flat band bending can appear in the course of the natural maturation process of the surface state in an ambient air. Furthermore, we demonstrate that the evolution of the surface electronic state can be accelerated, decelerated, or even stopped by controlling environmental conditions to contain different amount of H₂O, in particular.

Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2Se3

Three-dimensional topological insulators are fascinating materials with insulating bulk yet metallic surfaces that host highly mobile charge carriers with locked spin and momentum. Remarkably, surface currents with tunable direction and magnitude can be launched with tailored light beams. To better understand the underlying mechanisms, the current dynamics need to be resolved on the timescale of elementary scattering events (∼10 fs). Here, we excite and measure photocurrents in the model topological insulator Bi₂Se₃ with a time resolution of 20 fs by sampling the concomitantly emitted broadband terahertz (THz) electromagnetic field from 0.3 to 40 THz. Strikingly, the surface current response is dominated by an ultrafast charge transfer along the Se–Bi bonds. In contrast, photon-helicity-dependent photocurrents are found to be orders of magnitude smaller than expected from generation scenarios based on asymmetric depopulation of the Dirac cone. Our findings are of direct relevance for broadband optoelectronic devices based on topological-insulator surface currents.

Surface currents in topological insulators can be controlled by light, but the underlying mechanisms are not well understood. Here, Braun et al. report an ultrafast shift photocurrent at the surface of Ca-doped Bi₂Se₃, whereas injection currents are much smaller than expected from asymmetric depopulation of the Dirac cone.