Giant photovoltaic effect of ferroelectric domain walls in perovskite single crystals

Polarization and Dielectric Properties of BiFeO3-BaTiO3 Superlattice-Structured Ferroelectric Films

Superlattice-structured epitaxial thin films composed of Mn(5%)-doped BiFeO₃ and BaTiO₃ with a total thickness of 600 perovskite (ABO₃) unit cells were grown on single-crystal SrTiO₃ substrates by pulsed laser deposition, and their polarization and dielectric properties were investigated. When the layers of Mn-BiFeO₃ and BaTiO₃ have over 25 ABO₃ unit cells (N), the superlattice can be regarded as a simple series connection of their individual capacitors. The superlattices with an N of 5 or less behave as a unified ferroelectric, where the BaTiO₃ and Mn-BiFeO₃ layers are structurally and electronically coupled. Density functional theory calculations can explain the behavior of spontaneous polarization for the superlattices in this thin regime. We propose that a superlattice formation comprising two types of perovskite layers with different crystal symmetries opens a path to novel ferroelectrics that cannot be obtained in a solid solution system.

Memristive Artificial Synapses for Neuromorphic Computing

Neuromorphic computing simulates the operation of biological brain function for information processing and can potentially solve the bottleneck of the von Neumann architecture. This computing is realized based on memristive hardware neural networks in which synaptic devices that mimic biological synapses of the brain are the primary units. Mimicking synaptic functions with these devices is critical in neuromorphic systems. In the last decade, electrical and optical signals have been incorporated into the synaptic devices and promoted the simulation of various synaptic functions. In this review, these devices are discussed by categorizing them into electrically stimulated, optically stimulated, and photoelectric synergetic synaptic devices based on stimulation of electrical and optical signals. The working mechanisms of the devices are analyzed in detail. This is followed by a discussion of the progress in mimicking synaptic functions. In addition, existing application scenarios of various synaptic devices are outlined. Furthermore, the performances and future development of the synaptic devices that could be significant for building efficient neuromorphic systems are prospected.

Highly Sensitive and Tunable Self-Powered UV Photodetectors Driven Jointly by p-n Junction and Ferroelectric Polarization

Ferroelectric (FE) materials are thought to be promising materials for self-powered ultraviolet (UV) photodetector applications because of their photovoltaic effects. However, FE-based photodetectors exhibited poor performance because of the weak photovoltaic effect of FE depolarization field (E_dp) on the separation of photo-generated carriers. In this work, self-powered photodetectors based on both E_dp and built-in electric field at the p-n junction (E_p-n) were designed to obtain enhanced device performance. A NiO/Pb_0.95La_0.05Zr_0.54Ti_0.46O₃ (PLZT) heterojunction-based device is constructed to take advantage of energy level alignments that favor electron extraction. The device exhibits a tunable performance upon varying the polarization direction of PLZT. The NiO/PLZT heterojunction-based device with the PLZT layer in the poling down state shows a higher responsivity [R = (1.8 ± 0.12) × 10^-4 A/W] and detectivity [D* = (3.69 ± 0.2) × 10⁹ Jones], a faster response speed (τ_r = 0.34 ± 0.03 s, τ_d = 0.36 ± 0.02 s), and a lower dark current [I_dark = (1.3 ± 0.19) × 10^-12 A] under zero bias than the PLZT-based device because of the synergistic effects of E_dp and E_p-n. Moreover, under weak-light illumination (0.1 mW/cm²), it exhibits even higher R [(6.3 ± 1.2) × 10^-4 A/W] and D* [(1.29 ± 0.26) × 10¹⁰ Jones] values, which surpass those of most previously reported FE-based self-powered photodetectors. Our work emphasizes the role of the coupling effect between E_p-n and E_dp in the photovoltaic process of NiO/PLZT heterojunction-based devices and provides an effective way to promote the self-powered UV photodetector applications.

Photovoltaic properties in an orthorhombic Fe doped KTN single crystal

Since the domain wall photovoltaic effect (DW-PVE) is reported in BiFeO₃ film, the investigations on photovoltaic properties in ferroelectrics have appealed more and more attention. In this work, we employed two Fe doped KTa_1-xNbxO₃ (Fe:KTN) single crystals in tetragonal phase and orthorhombic phase, respectively, possessing similar net polarization along [001]_C direction, to quantize the contribution on photovoltaic properties from bulk photovoltaic effect (BPVE) and DW-PVE in Fe:KTN. The results show that there are significant enhancements of open-circuit voltages (V_OC = -6.0 V, increases over 440%) and short-circuit current density (J_SC = 18.5 nA cm^-2, increases over 1580%) in orthorhombic Fe:KTN with engineer-domain structure after poled, corresponding to 14.2 mV and 2.2 mV for the single domain wall and bulk region under illumination of 405 nm light (100 mW). It reveals that DW-PVE plays a major role in KTN-based ferroelectrics, indicating an orthorhombic Fe:KTN single crystal is one of the potential photovoltaic materials.

Successive redox-mediated visible-light ferrophotovoltaics

Titanium oxide materials have multiple functions such as photocatalytic and photovoltaic effects. Ferroelectrics provide access to light energy conversion that delivers above-bandgap voltages arising from spatial inversion symmetry breaking, whereas their wide bandgap leads to poor absorption of visible light. Bandgap narrowing offers a potential solution, but this material modification suppresses spontaneous polarization and, hence, sacrifices photovoltages. Here, we report successive-redox mediated ferrophotovoltaics that exhibit a robust visible-light response. Our single-crystal experiments and ab initio calculations, along with photo-luminescence analysis, demonstrate that divalent Fe²⁺ and trivalent Fe³⁺ coexisted in a prototypical ferroelectric barium titanate BaTiO₃ introduce donor and acceptor levels, respectively, and that two sequential Fe³⁺/Fe²⁺ redox reactions enhance the photogenerated power not only under visible light but also at photon energies greater than the bandgap. Our approach opens a promising route to the visible-light activation of photovoltaics and, potentially, of photocatalysts.

Photovoltaic response from normal ferroelectric materials generates large voltages but low current due to poor absorption of visible light. Noguchi et al. dope ferrous and ferric ion couple into barium titanate crystals to enhance the photogeneration at photon energies both below and above bandgap.

Advancing Versatile Ferroelectric Materials Toward Biomedical Applications

Ferroelectric materials (FEMs), possessing piezoelectric, pyroelectric, inverse piezoelectric, nonlinear optic, ferroelectric-photovoltaic, and many other properties, are attracting increasing attention in the field of biomedicine in recent years. Because of their versatile ability of interacting with force, heat, electricity, and light to generate electrical, mechanical, and optical signals, FEMs are demonstrating their unique advantages for biosensing, acoustics tweezer, bioimaging, therapeutics, tissue engineering, as well as stimulating biological functions. This review summarizes the current-available FEMs and their state-of-the-art fabrication techniques, as well as provides an overview of FEMs-based applications in the field of biomedicine. Challenges and prospects for future development of FEMs for biomedical applications are also outlined.

Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion

An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high-efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo-, pyro-, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects.

Functional Ferroic Domain Walls for Nanoelectronics

A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices.

Structures and electronic properties of domain walls in BiFeO3 thin films

Domain walls (DWs) in ferroelectrics are atomically sharp and can be created, erased, and reconfigured within the same physical volume of ferroelectric matrix by external electric fields. They possess a myriad of novel properties and functionalities that are absent in the bulk of the domains, and thus could become an essential element in next-generation nanodevices based on ferroelectrics. The knowledge about the structure and properties of ferroelectric DWs not only advances the fundamental understanding of ferroelectrics, but also provides guidance for the design of ferroelectric-based devices. In this article, we provide a review of structures and properties of DWs in one of the most widely studied ferroelectric systems, BiFeO₃ thin films. We correlate their conductivity and photovoltaic properties to the atomic-scale structure and dynamic behaviors of DWs.

Increasing bulk photovoltaic current by strain tuning

Photovoltaic phenomena are widely exploited not only for primary energy generation but also in photocatalytic, photoelectrochemistry, or optoelectronic applications. In contrast to the interface-based photovoltaic effect of semiconductors, the anomalous or bulk photovoltaic effect in ferroelectrics is not bound by the Shockley-Queisser limit and, thus, can potentially reach high efficiencies. Here, we observe in the example of an Fe-doped LiNbO₃ bulk single crystal the existence of a purely intrinsic "piezophotovoltaic" effect that leads to a linear increase in photovoltaic current density. The increase reaches 75% under a low uniaxial compressive stress of 10 MPa, corresponding to a strain of only 0.005%. The physical origin and symmetry properties of the effect are investigated, and its potential for strain-tuned efficiency increase in nonconventional photovoltaic materials is presented.

Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling

Ferroelectric materials are interesting candidates for future photovoltaic applications due to their potential to overcome the fundamental limits of conventional single bandgap semiconductor-based solar cells. Although a more efficient charge separation and above bandgap photovoltages are advantageous in these materials, tailoring their photovoltaic response using ferroelectric functionalities remains puzzling. Here we address this issue by reporting a clear hysteretic character of the photovoltaic effect as a function of electric field and its dependence on the poling history. Furthermore, we obtain insight into light induced nonequilibrium charge carrier dynamics in Bi2FeCrO6 films involving not only charge generation, but also recombination processes. At the ferroelectric remanence, light is able to electrically depolarize the films with remanent and transient effects as evidenced by electrical and piezoresponse force microscopy (PFM) measurements. The hysteretic nature of the photovoltaic response and its nonlinear character at larger light intensities can be used to optimize the photovoltaic performance of future ferroelectric-based solar cells.

Giant photovoltaic response in band engineered ferroelectric perovskite

Recently the solar energy, an inevitable part of green energy source, has become a mandatory topics in frontier research areas. In this respect, non-centrosymmetric ferroelectric perovskites with open circuit voltage (V_OC) higher than the bandgap, gain tremendous importance as next generation photovoltaic materials. Here a non-toxic co-doped Ba_1-x(Bi_0.5Li_0.5) _x TiO₃ ferroelectric system is designed where the dopants influence the band topology in order to enhance the photovoltaic effect. In particular, at the optimal doping concentration (x _opt  ~ 0.125) the sample reveals a remarkably high photogenerated field E_OC = 320 V/cm (V_OC = 16 V), highest ever reported in any bulk polycrystalline non-centrosymmetric systems. The band structure, examined through DFT calculations, suggests that the shift current mechanism is key to explain the large enhancement in photovoltaic effect in this family.

Gap-state engineering of visible-light-active ferroelectrics for photovoltaic applications

Photoferroelectrics offer unique opportunities to explore light energy conversion based on their polarization-driven carrier separation and above-bandgap voltages. The problem associated with the wide bandgap of ferroelectric oxides, i.e., the vanishingly small photoresponse under visible light, has been overcome partly by bandgap tuning, but the narrowing of the bandgap is, in principle, accompanied by a substantial loss of ferroelectric polarization. In this article, we report an approach, ‘gap-state’ engineering, to produce photoferroelectrics, in which defect states within the bandgap act as a scaffold for photogeneration. Our first-principles calculations and single-domain thin-film experiments of BiFeO₃ demonstrate that gap states half-filled with electrons can enhance not only photocurrents but also photovoltages over a broad photon-energy range that is different from intermediate bands in present semiconductor-based solar cells. Our approach opens a promising route to the material design of visible-light-active ferroelectrics without sacrificing spontaneous polarization.

Overcoming the optical transparency of wide bandgap of ferroelectric oxides by narrowing its bandgap tends to result in a loss of polarization. By utilizing defect states within the bandgap, Matsuo et al. report visible-light-active ferroelectrics without sacrificing polarization.

Terahertz-Range Polar Modes in Domain-Engineered BiFeO_{3}

The dielectric permittivity and properties of electrically active lattice resonances in nanotwinned BiFeO_{3} crystals have been studied theoretically using an earlier established interatomic potential. The results suggest that an array of 71° domain walls with about 2-5 nm spacing enhances the static permittivity of BiFeO_{3} by more than an order of magnitude. This enhancement is associated with an electrically active excitation, corresponding to a collective vibration of pinned domain walls at a remarkably high frequency of about 0.3 THz.