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Ferahtia S, Benyettou S, Saib S, Bouarissa N, Ouail K. Mechanical and thermoelectric properties of ZrX 2 and HfX 2 (X = S and Se) from Van der Waals density-functional theory. J Mol Graph Model 2024; 131:108812. [PMID: 38889557 DOI: 10.1016/j.jmgm.2024.108812] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2024] [Revised: 05/04/2024] [Accepted: 06/12/2024] [Indexed: 06/20/2024]
Abstract
The structural, mechanical, and thermoelectric characteristics of layered transition metal dichalcogenides MX2 (M = Zr, Hf; X = S, Se) have been studied using density functional theory along with van der Waals correction. The exchange-correlation functional, enhanced with corrections for van der Waals interactions, has been evaluated for the hexagonal bulk structures of these materials. The analysis of elastic properties reveals that these compounds exhibit brittleness at zero pressure and conform to Born's criteria for mechanical stability. Examination of elastic constants and moduli suggests that the compounds possess reasonable machinability, moderate hardness, and anisotropy in terms of sound velocity. Transport properties, including the Seebeck coefficient, electrical conductivity, thermal conductivity, and power factor, have been computed using the semi-classical Boltzmann theory implemented in the BoltzTraP code. All investigated compounds exhibit excellent thermoelectric performance at high temperatures. This result suggests that our compounds are highly promising candidate for practical utilization in the thermoelectric scope.
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Affiliation(s)
- S Ferahtia
- Laboratory of Materials Physics and Its Applications, University of M'sila, 28000, M'sila, Algeria; Physics Department, Faculty of Science, University of M'sila, 28000, M'sila, Algeria.
| | - S Benyettou
- Laboratory of Materials Physics and Its Applications, University of M'sila, 28000, M'sila, Algeria; Physics Department, Faculty of Science, University of M'sila, 28000, M'sila, Algeria
| | - S Saib
- Laboratory of Materials Physics and Its Applications, University of M'sila, 28000, M'sila, Algeria; Physics Department, Faculty of Science, University of M'sila, 28000, M'sila, Algeria.
| | - N Bouarissa
- Laboratory of Materials Physics and Its Applications, University of M'sila, 28000, M'sila, Algeria; Physics Department, Faculty of Science, University of M'sila, 28000, M'sila, Algeria
| | - Kh Ouail
- Laboratory of Materials Physics and Its Applications, University of M'sila, 28000, M'sila, Algeria; Physics Department, Faculty of Science, University of M'sila, 28000, M'sila, Algeria
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2
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Khaustov VO, Convertino D, Köster J, Zakharov AA, Mohn MJ, Gebeyehu ZM, Martini L, Pace S, Marini G, Calandra M, Kaiser U, Forti S, Coletti C. Heterocontact-Triggered 1H to 1T' Phase Transition in CVD-Grown Monolayer MoTe 2: Implications for Low Contact Resistance Electronic Devices. ACS APPLIED NANO MATERIALS 2024; 7:18094-18105. [PMID: 39206354 PMCID: PMC11348416 DOI: 10.1021/acsanm.3c01314] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 06/16/2023] [Indexed: 09/04/2024]
Abstract
Single-layer molybdenum ditelluride (MoTe2) has attracted attention due to the smaller energy difference between the semiconducting (1H) and semimetallic (1T') phases with respect to other two-dimensional transition metal dichalcogenides (TMDs). Understanding the phenomenon of polymorphism between these structural phases is of great fundamental and practical importance. In this paper, we report a 1H to 1T' phase transition occurring during the chemical vapor deposition (CVD) synthesis of single-layer MoTe2 at 730 °C. The transformation originates at the heterocontact between monoclinic and hexagonal crystals and progresses to either yield a partial or complete 1H to 1T' phase transition. Microscopic and spectroscopic analyses of the MoTe2 crystals reveal the presence of Te vacancies and mirror twin boundaries (MTB) domains in the hexagonal phase. The experimental observations and theoretical simulations indicate that the combination of heterocontact formation and Te vacancies are relevant triggering mechanisms in the observed transformation. By advancing in the understanding and controlling of the direct synthesis of lateral 1T'/1H heterostructures, this work contributes to the development of MoTe2-based electronic and optoelectronic devices with low contact resistance.
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Affiliation(s)
- Vladislav O. Khaustov
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- NEST, Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Domenica Convertino
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Janis Köster
- Central
Facility for Electron Microscopy, Materials Science Electron Microscopy, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
| | | | - Michael J. Mohn
- Central
Facility for Electron Microscopy, Materials Science Electron Microscopy, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
| | - Zewdu M. Gebeyehu
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Leonardo Martini
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Simona Pace
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Giovanni Marini
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Matteo Calandra
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
- Department
of Physics, University of Trento, Via Sommarive 14, 38123 Povo, Italy
- Institut
des Nanosciences de Paris, UMR7588, Sorbonne
Université, CNRS, F-75252 Paris, France
| | - Ute Kaiser
- Central
Facility for Electron Microscopy, Materials Science Electron Microscopy, Ulm University, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
| | - Stiven Forti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
| | - Camilla Coletti
- Center
for Nanotechnology Innovation @NEST, Istituto
Italiano di Tecnologia, Piazza San Silvestro 12, I-56127 Pisa, Italy
- Graphene
Laboratories, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
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3
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Liu H, Zhang T, Wu P, Lee HW, Liu Z, Tang TW, Tang SY, Kang T, Park JH, Wang J, Zhang K, Zheng X, Peng YR, Chueh YL, Liu Y, Palacios T, Kong J, Luo Z. Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition. NANO LETTERS 2024; 24:8277-8286. [PMID: 38949123 DOI: 10.1021/acs.nanolett.4c01314] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/02/2024]
Abstract
The controlled vapor-phase synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for functional applications. While chemical vapor deposition (CVD) techniques have been successful for transition metal sulfides, extending these methods to selenides and tellurides often faces challenges due to uncertain roles of hydrogen (H2) in their synthesis. Using CVD growth of MoSe2 as an example, this study illustrates the role of a H2-free environment during temperature ramping in suppressing the reduction of MoO3, which promotes effective vaporization and selenization of the Mo precursor to form MoSe2 monolayers with excellent crystal quality. As-synthesized MoSe2 monolayer-based field-effect transistors show excellent carrier mobility of up to 20.9 cm2/(V·s) with an on-off ratio of 7 × 107. This approach can be extended to other TMDs, such as WSe2, MoTe2, and MoSe2/WSe2 in-plane heterostructures. Our work provides a rational and facile approach to reproducibly synthesize high-quality TMD monolayers, facilitating their translation from laboratory to manufacturing.
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Affiliation(s)
- Hongwei Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Peng Wu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Hae Won Lee
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhenjing Liu
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Tsz Wing Tang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
| | - Shin-Yi Tang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ting Kang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun Wang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
| | - Kenan Zhang
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yu-Ren Peng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Yu-Lun Chueh
- Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, P. R. China
| | - Tomás Palacios
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, Hong Kong 999077, P. R. China
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de Albornoz-Caratozzolo JM, Cervantes-Sodi F. Chiraltube, rolling 2D materials into chiral nanotubes. NANOSCALE ADVANCES 2023; 6:79-91. [PMID: 38125603 PMCID: PMC10729892 DOI: 10.1039/d3na00301a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Accepted: 09/30/2023] [Indexed: 12/23/2023]
Abstract
Carbon nanotubes (NTs) are graphene sheets rolled into a 1D material, with a specific chirality that defines its structure and properties. Graphene has triggered the development of thousands of 2D materials, which in principle could also be rolled into 1D NTs. However, most of these NTs have not been proposed due to difficulties in the generation of atomic coordinates for chiral NTs from 2D materials with a non-hexagonal lattice or multi-layered materials. In this paper we present Chiraltube, an open-source Python code that allows the quick generation of a complete NT with any chirality from the unit cell of its original 2D material. We explain the inner workings of the code as well as the theoretical background on which it is built, generalizing concepts from the construction of chiral and achiral carbon NTs to work on any other 2D material. We show various examples of the resulting chiral NT structures built from phosphorene, MoS2 and Ti3C2, and present some analysis on the interatomic distortion in the outermost layers of these NTs, as well as the results of ab initio electronic structure calculations on a set of phosphorene NTs generated by the program, showing the immediate practicality and usefulness of the program. We also explore some limitations and details of the tool as well as further work to be done.
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Affiliation(s)
- José M de Albornoz-Caratozzolo
- Universidad Iberoamericana, Physics and Mathematics Department Prol. Paseo de la Reforma 880 Lomas de Santa Fe Ciudad de México Mexico +52 55 59504275
| | - Felipe Cervantes-Sodi
- Universidad Iberoamericana, Physics and Mathematics Department Prol. Paseo de la Reforma 880 Lomas de Santa Fe Ciudad de México Mexico +52 55 59504275
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5
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Uthappa UT, Nehra M, Kumar R, Dilbaghi N, Marrazza G, Kaushik A, Kumar S. Trends and prospects of 2-D tungsten disulphide (WS 2) hybrid nanosystems for environmental and biomedical applications. Adv Colloid Interface Sci 2023; 322:103024. [PMID: 37952364 DOI: 10.1016/j.cis.2023.103024] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 10/09/2023] [Accepted: 10/09/2023] [Indexed: 11/14/2023]
Abstract
Recently, 2D layered transition metal dichalcogenides (TMDCs) with their ultrathin sheet nanostructure and diversified electronic structure have drawn attention for various advanced applications to achieve high-performance parameters. Unique 2D TMDCs mainly comprise transition metal and chalcogen element where chalcogen element layers sandwich the transition metal element layer. In such a case, various properties can be enhanced and controlled depending on the targeted application. Among manipulative 2D TMDCs, tungsten disulphide (WS2) is one of the emerging nano-system due to its fascinating properties in terms of direct band gap, higher mobility, strong photoluminescence, good thermal stability, and strong magnetic field interaction. The advancement in characterization techniques, especially scattering techniques, can help in study of opto-electronic properties of 2D TMDCs along with determination of layer variations and investigation of defect. In this review, the fabrication and applications are well summarized to optimize an appropriate WS2-TMDCs assembly according to focused field of research. Here, the scientific investigations on 2D WS2 are studied in terms of its structure, role of scattering techniques to study its properties, and synthesis routes followed by its potential applications for environmental remediation (e.g., photocatalytic degradation of pollutants, gas sensing, and wastewater treatment) and biomedical domain (e.g., drug delivery, photothermal therapy, biomedical imaging, and biosensing). Further, a special emphasis is given to the significance of 2D WS2 as a substrate for surface-enhanced Raman scattering (SERS). The discussion is further extended to commercial and industrial aspects, keeping in view major research gaps in existing research studies.
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Affiliation(s)
- U T Uthappa
- School of Chemical Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan, Gyeongbuk 38541, Republic of Korea; Department of Bioengineering, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Sciences, Chennai, 602105, India
| | - Monika Nehra
- Department of Mechanical Engineering, University Institute of Engineering and Technology, Panjab University, Chandigarh 160014, India
| | - Rajesh Kumar
- Department of Mechanical Engineering, University Institute of Engineering and Technology, Panjab University, Chandigarh 160014, India
| | - Neeraj Dilbaghi
- Department of Bio and Nano Technology, Guru Jambheshwar University of Science and Technology, Hisar, Haryana 125001, India
| | - Giovanna Marrazza
- Department of Chemistry" Ugo Schiff", University of Florence, Via della Lastruccia 3, 50019 Sesto Fiorentino, Florence, Italy
| | - Ajeet Kaushik
- NanoBioTech Laboratory, Department of Environmental Engineering, Florida Polytechnic University, Lakeland, FL 33805-8531, USA; United State, School of Engineering, University of Petroleum and Energy Studies, Dehradun 248007, India.
| | - Sandeep Kumar
- Department of Bio and Nano Technology, Guru Jambheshwar University of Science and Technology, Hisar, Haryana 125001, India; Physics Department, Punjab Engineering College (Deemed to be University), Chandigarh 160012, India.
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6
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Bounbaâ M, Khuili M, Fazouan N, Atmani EH, Allaoui I, Houmad M. Li adsorption and diffusion on the surfaces of molybdenum dichalcogenides MoX 2 (X = S, Se, Te) monolayers for lithium-ion batteries application: a DFT study. J Mol Model 2023; 29:378. [PMID: 37968434 DOI: 10.1007/s00894-023-05787-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Accepted: 11/08/2023] [Indexed: 11/17/2023]
Abstract
CONTEXT We study some of the most high performance electrode materials for lithium-ion batteries. These comprise molybdenum dichalcogenide MoX2 (molybdenum disulfide MoS2, molybdenum diselenide MoSe2, molybdenum ditelluride MoTe2). The stability is studied by calculating cohesive energy and formation energy. Structural, electronic, and electrical properties are well defined, and these structures show a direct gap. Lithium adsorption at different sites, theoretical storage capacity, and lithium diffusion path are determined. Our study findings suggest that the adsorption of Li on the preferred site on the surface of the MoX2 monolayer maintains its semiconductor behavior. Comparing the activation energy barrier of these structures with other monolayers such as graphene or silicene, we found that MoX2 shows low lithium diffusion energy and good storage capacity, which indicates that the MoX2 is well suited as an anode material for lithium-ion batteries. Our research can offer new ideas for experimental and theoretical design and new anode materials for lithium-ion batteries (LIB). METHODS The studies were performed with Quantum ESPRESSO package based on density functional theory (DFT), plane waves, and pseudopotentials (PWSCF) to calculate the physical properties of MoX2 (X = S, Se, Te), lithium adsorption, and diffusion on their surfaces and the storage capacity of these structures. The BoltzTraP code is used to calculate thermoelectric properties.
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Affiliation(s)
- Malak Bounbaâ
- Laboratory of Nanostructures and Advanced Materials, Mechanics and Thermofluid, Hassan II University of Casablanca, Faculty of Sciences and Technologies, B.P 146, 20650, Mohammedia, Morocco
| | - Mohamed Khuili
- Laboratory of Nanostructures and Advanced Materials, Mechanics and Thermofluid, Hassan II University of Casablanca, Faculty of Sciences and Technologies, B.P 146, 20650, Mohammedia, Morocco.
- CRMEF of Beni Mellal-Khenifra, Khenifra, Morocco.
- Superior School of Technology, Sultan Moulay Slimane University of Beni Mellal, Khenifra, Morocco.
| | - Nejma Fazouan
- Laboratory of Nanostructures and Advanced Materials, Mechanics and Thermofluid, Hassan II University of Casablanca, Faculty of Sciences and Technologies, B.P 146, 20650, Mohammedia, Morocco
| | - El Houssine Atmani
- Laboratory of Nanostructures and Advanced Materials, Mechanics and Thermofluid, Hassan II University of Casablanca, Faculty of Sciences and Technologies, B.P 146, 20650, Mohammedia, Morocco
| | - Isam Allaoui
- Laboratory of Condensed Matter and Interdisciplinary Sciences(LaMCScI), B.P. 1014, Faculty of Science-Mohammed V University, Rabat, Morocco
| | - Mohamed Houmad
- Faculty of Science, Mohammed V University of Rabat, Rabat, Morocco
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Son E, Lee S, Seo J, Kim U, Kim SH, Baik JM, Han YK, Park H. Engineering the Local Atomic Configuration in 2H TMDs for Efficient Electrocatalytic Hydrogen Evolution. ACS NANO 2023. [PMID: 37183803 DOI: 10.1021/acsnano.3c02344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
The introduction of heteroatoms is a widely employed strategy for electrocatalysis of transition metal dichalcogenides (TMDs). This approach activates the inactive basal plane, effectively boosting the intrinsic catalytic activity. However, the effect of atomic configurations incorporated within the TMDs' lattice on catalytic activity is not thoroughly understood owing to the lack of controllable synthetic approaches for highly doped TMDs. In this study, we demonstrate a facile approach to realizing heavily doped MoS2 with a high doping concentration above 16% via intermediate-reaction-mediated chemical vapor deposition. As the V doping concentration increased, the incorporated V atoms coalesced in a manner that enabled both the basal plane activation and electrical conductivity enhancement of MoS2. This accelerated the kinetics of the hydrogen evolution reaction (HER) through the reduced Gibbs free energy of hydrogen adsorption, as evidenced by experimental and theoretical analyses. Consequently, the coalesced V-doped MoS2 exhibited superior HER performance, with an overpotential of 100 mV at 10 mA cm-2, surpassing the pristine and single-atom-doped counterparts. This study provides an intriguing pathway for engineering the atomic doping configuration of TMDs to develop efficient 2D nanomaterial-based electrocatalysts.
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Affiliation(s)
- Eunbin Son
- Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Sangjin Lee
- Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - Jihyung Seo
- Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Ungsoo Kim
- Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Sang Heon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeong Min Baik
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young-Kyu Han
- Department of Energy and Materials Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea
| | - Hyesung Park
- Department of Materials Science and Engineering, Graduate School of Semiconductor Materials and Devices Engineering, Graduate School of Carbon Neutrality, Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
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8
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de Carvalho LC, da Lapa RS, Alexandre SS, Nunes RW. Structural and thermodynamic properties of quasi-2D Mo (1-x)W x(S, Se, Te) 2monolayer alloys: a statistical first principle study. NANOTECHNOLOGY 2023; 34:275704. [PMID: 36917839 DOI: 10.1088/1361-6528/acc406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Accepted: 03/14/2023] [Indexed: 06/18/2023]
Abstract
In this work, we report anab initiostudy of the structural and thermodynamic properties of two-dimensional transition-metal dichalcogenides (2D-TMDC) alloys, Mo(1-x)Wx(S, Se, Te)2, using the cluster expansion framework to compute the Helmholtz free energy of alloys as a function of alloy composition and temperature, in the framework of the generalized quasi-chemical approximation. We consider alloying only on the metal sublayer. Our results indicate a weak dependence of the structural properties (lattice constants, nearest-neighbor bond lengths, and layer width) on the alloy composition (i.e. concentrations of W and Mo atoms), in line with the very similar values of the atomic radii of Mo and W atoms. A stronger dependence on the chalcogen is obtained, a trend that reflects the larger variations in atomic radii among the three chalcogen species. As a function of composition, the structural parameters we examined show similar trends, with negligible bowing (i.e. deviations from a Vegard's law interpolation between end compounds), for the three alloys. Moreover, already at 300 K the behavior of these structural features as a function of composition is very similar to that of the standard-regular-solution (SRS) high-temperature limit. In contrast, the electronic band gaps of the the three alloys as a function of composition show small but significant bowing, as high as -1% to -2% near thex= 0.5 alloy composition. Similarly to the structural features, the band gaps attain the high-temperature SRS limit already at 300 K. Regarding thermodynamic properties, we obtain negative values of the internal energy of mixing for the three alloys over the full range of compositions. Therefore, the theoretical alloying phase diagram for the three alloys is featureless, with stability of a fully-mixed alloy at all temperatures and compositions, with no miscibility gap (hence no bimodal nor spinodal decomposition lines). The thermodynamic potentials (mixing internal energy, mixing entropy, and mixing free energy) reach the high-temperature limit at ∼1000 K, the temperature range of synthesis of 2D-TMDC alloys. These trends of structural and electronic properties of the 2D-TMDC alloys are due to the very similar atomic radii and the nearly identical coordination chemistry of Mo and W. Our results are in agreement with experimental work on the alloying of Mo and W atoms, for samples of Mo(1-x)WxS2monolayer alloys, that found that the random mixed alloy is the thermodynamically stable state for this alloy, with no segregation or phase separation.
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Affiliation(s)
- Luiz Cláudio de Carvalho
- Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Caixa Postal 702, CEP 31270-901, Belo Horizonte, Minas Gerais, Brazil
| | - Rodrigo Santos da Lapa
- Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Caixa Postal 702, CEP 31270-901, Belo Horizonte, Minas Gerais, Brazil
- Instituto de Ciências da Vida e da Natureza, Universidade Federal da Integração Latino-Americana, Caixa Postal 2044, Foz do Iguaçu, Brazil
| | - Simone Silva Alexandre
- Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Caixa Postal 702, CEP 31270-901, Belo Horizonte, Minas Gerais, Brazil
| | - Ricardo Wagner Nunes
- Departamento de Física, ICEx, Universidade Federal de Minas Gerais, Caixa Postal 702, CEP 31270-901, Belo Horizonte, Minas Gerais, Brazil
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9
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Price CJ, Pitfield J, Baker EAD, Hepplestone SP. First principles study of layered scandium disulfide for use as Li-ion and beyond-Li-ion batteries. Phys Chem Chem Phys 2023; 25:2167-2178. [PMID: 36594278 DOI: 10.1039/d2cp05055b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
The growing demand for high efficiency portable batteries has prompted a deeper exploration for alternative cathode materials. Due to low Earth abundance, scandium has not received much attention, however its low atomic mass makes it ideal for high gravimetric capacity electrodes. Here we have performed a comprehensive first-principles study to assess the performance of layered ScS2 as a potential cathode for lithium-ion and beyond-lithium-ion batteries. We have explored the configuration space of ScS2 and its intercalated compounds using a mix of machine learning and ab initio techniques, finding the ground state geometry to be layered in nature. This layered structure is found to have a high voltage, reaching above 4.5 V for Group I intercalants, ideal volume expansions below 10% for lithium and magnesium intercalation, is electronically conductive, and is ductile once intercalated. Of the intercalants considered, we find that lithium is the best choice for cathode applications, for which we have used a combination of thermodynamic phase diagrams, ab intio phonon calculations, and evaluation of the elastic tensor to conclude that ScS2 possesses a reversible capacity of 182.99 mA h g-1, on par with current state of the art cathode materials such as LiCoO2, NMC, and NCA. Finally, we substitute foreign metal species into the ScS2 material to determine their effect on key cathode properties, but find that these are overall detrimental to the performance of ScS2. This does, however, highlight the potential for improvement if scandium were mixed into other layered systems such as the layered transition metal oxides.
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Affiliation(s)
- Conor Jason Price
- Department of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK.
| | - Joe Pitfield
- Department of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK.
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10
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Pippia G, Van Hamme D, Martín-García B, Prato M, Moreels I. A colloidal route to semiconducting tungsten disulfide nanosheets with monolayer thickness. NANOSCALE 2022; 14:15859-15868. [PMID: 36259965 DOI: 10.1039/d2nr04307f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Transition metal dichalcogenides (TMDs) are a class of materials that have been extensively studied in the last decade, with molybdenum disulfide (MoS2) being the main protagonist. Typically, the interesting TMD properties, e.g. a direct band gap transition, or broken inversion symmetry, are only present in monolayer thick TMDs, and in the absence of strong lateral confinement, we require different materials or alloys thereof when we want to obtain TMDs with varying (direct) band gap energies. With this in mind, tungsten disulfide (WS2) is emerging as a direct competitor of MoS2 due to its similar properties but larger band gap energy. While several colloidal strategies have been reported for the synthesis of WS2, the synthesis of monolayer WS2 and detailed studies on the effect of synthesis parameters on the synthesis outcome have remained elusive. In this work we therefore focused on a colloidal synthesis method for monolayer WS2 using a design of experiment (DOE) approach. After optimization, we obtained nanosheets with a band gap transition consistent with the expected value for a monolayer. The thickness was further confirmed by Raman spectroscopy. While we could identify two temperature ranges where we could obtain a monolayer, sample characterization by XPS spectroscopy revealed the presence of different ratios of the metallic phase, with the sample synthesized at lower temperature displaying a lower concentration of the metallic phase.
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Affiliation(s)
- Gabriele Pippia
- Ghent University, Department of Chemistry, Krijgslaan 281, 9000 Gent, Belgium.
| | - Diem Van Hamme
- Ghent University, Department of Chemistry, Krijgslaan 281, 9000 Gent, Belgium.
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Tolosa Hiribidea 76, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Mirko Prato
- Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
| | - Iwan Moreels
- Ghent University, Department of Chemistry, Krijgslaan 281, 9000 Gent, Belgium.
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11
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De Vita A, Nguyen TTP, Sant R, Pierantozzi GM, Amoroso D, Bigi C, Polewczyk V, Vinai G, Nguyen LT, Kong T, Fujii J, Vobornik I, Brookes NB, Rossi G, Cava RJ, Mazzola F, Yamauchi K, Picozzi S, Panaccione G. Influence of Orbital Character on the Ground State Electronic Properties in the van Der Waals Transition Metal Iodides VI 3 and CrI 3. NANO LETTERS 2022; 22:7034-7041. [PMID: 36039834 PMCID: PMC9479147 DOI: 10.1021/acs.nanolett.2c01922] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional van der Waals magnetic semiconductors display emergent chemical and physical properties and hold promise for novel optical, electronic and magnetic "few-layers" functionalities. Transition-metal iodides such as CrI3 and VI3 are relevant for future electronic and spintronic applications; however, detailed experimental information on their ground state electronic properties is lacking often due to their challenging chemical environment. By combining X-ray electron spectroscopies and first-principles calculations, we report a complete determination of CrI3 and VI3 electronic ground states. We show that the transition metal-induced orbital filling drives the stabilization of distinct electronic phases: a wide bandgap in CrI3 and a Mott insulating state in VI3. Comparison of surface-sensitive (angular-resolved photoemission spectroscopy) and bulk-sensitive (X-ray absorption spectroscopy) measurements in VI3 reveals a surface-only V2+ oxidation state, suggesting that ground state electronic properties are strongly influenced by dimensionality effects. Our results have direct implications in band engineering and layer-dependent properties of two-dimensional systems.
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Affiliation(s)
- Alessandro De Vita
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
- Dipartimento di Fisica, Università di Milano, Via Celoria 16, I-20133 Milano, Italy
| | - Thao Thi Phuong Nguyen
- Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka 567-0047, Japan
- Department of Precision Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Roberto Sant
- ESRF, The European Synchrotron, 71 Avenue des Martyrs, F-38043 Grenoble, France
| | - Gian Marco Pierantozzi
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | - Danila Amoroso
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Unità di Ricerca presso Terzi c/o Università "G. D'Annunzio", 66100 Chieti, Italy
- NanoMat/Q-mat/CESAM, Université de Liège, B-4000 Liege, Belgium
| | - Chiara Bigi
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
- School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS, United Kingdom
| | - Vincent Polewczyk
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | - Giovanni Vinai
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | - Loi T Nguyen
- Department of Chemistry, Princeton University, Princeton, New Jersey 08540, United States
| | - Tai Kong
- Department of Chemistry, Princeton University, Princeton, New Jersey 08540, United States
| | - Jun Fujii
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | - Ivana Vobornik
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | - Nicholas B Brookes
- ESRF, The European Synchrotron, 71 Avenue des Martyrs, F-38043 Grenoble, France
| | - Giorgio Rossi
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
- Dipartimento di Fisica, Università di Milano, Via Celoria 16, I-20133 Milano, Italy
| | - Robert J Cava
- Department of Chemistry, Princeton University, Princeton, New Jersey 08540, United States
| | - Federico Mazzola
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
| | - Kunihiko Yamauchi
- Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka 567-0047, Japan
- Department of Precision Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Silvia Picozzi
- Consiglio Nazionale delle Ricerche (CNR-SPIN), Unità di Ricerca presso Terzi c/o Università "G. D'Annunzio", 66100 Chieti, Italy
| | - Giancarlo Panaccione
- Laboratorio TASC, in Area Science Park, Istituto Officina dei Materiali (IOM)-CNR, S.S.14, Km 163.5, I-34149 Trieste, Italy
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12
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Nguyen DA, Park DY, Duong NT, Lee KN, Im H, Yang H, Jeong MS. Large-Area MoS 2 via Colloidal Nanosheet Ink for Integrated Memtransistor. SMALL METHODS 2021; 5:e2100558. [PMID: 34927977 DOI: 10.1002/smtd.202100558] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2021] [Revised: 08/24/2021] [Indexed: 06/14/2023]
Abstract
2D transition metal dichalcogenides (TMDs) exhibit intriguing properties for applications in optoelectronics and electronics, among which memtransistors received extensive attention as multifunctional devices. For practical applications of 2D TMDs, large-area fabrication of the materials via reliable processes, which is in trade-off with their quality, has been a long-standing issue. Here, a simple and effective way is proposed to fabricate large-area and high-quality molybdenum disulfide thin films using MoS2 colloidal ink through a spray coating, followed by a postsulfurization process. High-quality MoS2 thin films exhibit excellent optical and electrical properties that can be utilized in field-effect transistors (FETs) and memtransistor arrays. The MoS2 FETs show an average on/off ratio of 5 × 106 and a high electron mobility of 10.34 cm2 V-1 s-1 , which can be understood by the healing of sulfur vacancies, recrystallization, and the removal of the carbon contamination of the MoS2 . These MoS2 -based memtransistors present stable operations with a high switching ratio tuned by back gate and light illumination, which is promising for multiple-levels memory and complex neuromorphic computing. This study demonstrates a new strategy to fabricate 2D TMDs with large-area and high quality for integrated optoelectronic and memory device applications.
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Affiliation(s)
- Duc Anh Nguyen
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Dae Young Park
- Department of Physics, Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Ngoc Thanh Duong
- Faculty of Materials Science and Engineering, Phenikaa University, Hanoi, 12116, Viet Nam
| | - Kang-Nyeoung Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Hyunsik Im
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
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13
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Electronic, optical and thermoelectric properties of the WS2–GaN interfaces: a DFT study. INTERNATIONAL NANO LETTERS 2020. [DOI: 10.1007/s40089-020-00311-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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14
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Khan MF, Rehman S, Rehman MA, Basit MA, Kim DK, Ahmed F, Khalil HMW, Akhtar I, Jun SC. Modulation of Magnetoresistance Polarity in BLG/SL-MoSe 2 Heterostacks. NANOSCALE RESEARCH LETTERS 2020; 15:136. [PMID: 32572648 PMCID: PMC7310050 DOI: 10.1186/s11671-020-03365-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2020] [Accepted: 06/07/2020] [Indexed: 06/01/2023]
Abstract
Two-dimensional (2D) layered materials have an atomically thin and flat nature which makes it an ultimate candidate for spintronic devices. The spin-valve junctions (SVJs), composed of 2D materials, have been recognized as unique features of spin transport polarization. However, the magnetotransport properties of SVJs are highly influenced by the type of intervening layer (spacer) inserted between the ferromagnetic materials (FMs). In this situation, the spin filtering effect at the interfaces plays a critical role in the observation of the magnetoresistance (MR) of such magnetic structures, which can be improved by using promising hybrid structure. Here, we report MR of bilayer graphene (BLG), single-layer MoSe2 (SL-MoSe2), and BLG/SL-MoSe2 heterostack SVJs. However, before annealing, BLG and SL-MoSe2 SVJs demonstrate positive MR, but after annealing, BLG reverses its polarity while the SL-MoSe2 maintains its polarity and demonstrated stable positive spin polarizations at both interfaces due to meager doping effect of ferromagnetic (FM) contacts. Further, Co/BLG/SL-MoSe2/NiFe determines positive MR, i.e., ~ 1.71% and ~ 1.86% at T = 4 K before and after annealing, respectively. On the contrary, NiFe/BLG/SL-MoSe2/Co SVJs showed positive MR before annealing and subsequently reversed its MR sign after annealing due to the proximity-induced effect of metals doping with graphene. The obtained results can be useful to comprehend the origin of polarity and the selection of non-magnetic material (spacer) for magnetotransport properties. Thus, this study established a new paragon for novel spintronic applications.
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Affiliation(s)
- Muhammad Farooq Khan
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South Korea
| | - Shania Rehman
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South Korea
| | - Malik Abdul Rehman
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea
| | - Muhammad Abdul Basit
- Department of Materials Science and Engineering, Institute of Space Technology, Islamabad, 44000, Pakistan
| | - Deok-Kee Kim
- Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, South Korea
| | - Faisal Ahmed
- Department of Mechanical Engineering, NUST College of Electrical and Mechanical Engineering, National University of Science and Technology, Islamabad, 44000, Pakistan
- Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, F1-00076, Aalto, Finland
| | - H M Waseem Khalil
- Department of Electrical Engineering, College of Engineering and Technology, University of Sargodha, Sargodha, Pakistan
| | - Imtisal Akhtar
- Department of Mechanical Engineering, Chung-Ang University, Seoul, South Korea
| | - Seong Chan Jun
- School of Mechanical Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, South Korea.
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15
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Wang CT, Du S. A unique pentagonal network structure of the NiS2 monolayer with high stability and a tunable bandgap. Phys Chem Chem Phys 2020; 22:7483-7488. [DOI: 10.1039/d0cp00434k] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The NiS2 monolayer with an intriguing pentagonal ring network is stable up to 500 K based on density functional theory calculations.
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Affiliation(s)
- Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics
- Institute of Physics
- Chinese Academy of Sciences
- Beijing 100190
- China
| | - Shixuan Du
- Beijing National Laboratory for Condensed Matter Physics
- Institute of Physics
- Chinese Academy of Sciences
- Beijing 100190
- China
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16
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Shen Y, Liu J, Li X, Wang Q. Two-Dimensional T-NiSe 2 as a Promising Anode Material for Potassium-Ion Batteries with Low Average Voltage, High Ionic Conductivity, and Superior Carrier Mobility. ACS APPLIED MATERIALS & INTERFACES 2019; 11:35661-35666. [PMID: 31532605 DOI: 10.1021/acsami.9b09223] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Potassium-ion batteries (KIBs) have attracted great attention due to their unique advantages including abundant resources, low redox potential of K, and feasible usage of cheap aluminum current collector in battery assembly. In the present work, through first-principles calculations, we find that the recently synthesized two-dimensional T-NiSe2 is a promising anode material of KIBs. It possesses a large capacity (247 mAh/g), small diffusion barrier (0.05 eV), and low average voltage (0.49 V), rendering T-NiSe2 a high-performance KIB anode candidate. In addition, we analyze the carrier mobility of T-NiSe2, and the results demonstrate that it possesses a superior carrier mobility of 1685 cm2/(V s), showing the potential for applications in nanoelectronic devices.
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Affiliation(s)
- Yupeng Shen
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL-MEMD, College of Engineering , Peking University , Beijing 100871 , China
| | - Jie Liu
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL-MEMD, College of Engineering , Peking University , Beijing 100871 , China
| | - Xiaoyin Li
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL-MEMD, College of Engineering , Peking University , Beijing 100871 , China
| | - Qian Wang
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL-MEMD, College of Engineering , Peking University , Beijing 100871 , China
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17
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Yadav V, Roy S, Singh P, Khan Z, Jaiswal A. 2D MoS 2 -Based Nanomaterials for Therapeutic, Bioimaging, and Biosensing Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1803706. [PMID: 30565842 DOI: 10.1002/smll.201803706] [Citation(s) in RCA: 182] [Impact Index Per Article: 36.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2018] [Revised: 10/18/2018] [Indexed: 05/26/2023]
Abstract
Molybdenum disulfide (MoS2 ), a typical layered 2D transition metal dichalcogenide, has received colossal interest in the past few years due to its unique structural, physicochemical, optical, and biological properties. While MoS2 is mostly applied in traditional industries such as dry lubricants, intercalation agents, and negative electrode material in lithium-ion batteries, its 2D and 0D forms have led to diverse applications in sensing, catalysis, therapy, and imaging. Herein, a systematic overview of the progress that is made in the field of MoS2 research with an emphasis on its different biomedical applications is presented. This article provides a general discussion on the basic structure and property of MoS2 and gives a detailed description of its different morphologies that are synthesized so far, namely, nanosheets, nanotubes, and quantum dots along with synthesis strategies. The biomedical applications of MoS2 -based nanocomposites are also described in detail and categorically, such as in varied therapeutic and diagnostic modalities like drug delivery, gene delivery, phototherapy, combined therapy, bioimaging, theranostics, and biosensing. Finally, a brief commentary on the current challenges and limitations being faced is provided, along with a discussion of some future perspectives for the overall improvement of MoS2 -based nanocomposites as a potential nanomedicine.
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Affiliation(s)
- Varnika Yadav
- School of Basic Sciences, Indian Institute of Technology Mandi, Kamand, Mandi, 175005, Himachal Pradesh, India
| | - Shounak Roy
- School of Basic Sciences, Indian Institute of Technology Mandi, Kamand, Mandi, 175005, Himachal Pradesh, India
| | - Prem Singh
- School of Basic Sciences, Indian Institute of Technology Mandi, Kamand, Mandi, 175005, Himachal Pradesh, India
| | - Ziyauddin Khan
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, SE-60174, Norrköping, Sweden
| | - Amit Jaiswal
- School of Basic Sciences, Indian Institute of Technology Mandi, Kamand, Mandi, 175005, Himachal Pradesh, India
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18
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Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide. Sci Rep 2018; 8:10035. [PMID: 29968813 PMCID: PMC6030073 DOI: 10.1038/s41598-018-28374-1] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2018] [Accepted: 06/11/2018] [Indexed: 11/08/2022] Open
Abstract
We report the first detailed characterization of the sheet third-harmonic optical susceptibility, χ(3)s, of tungsten diselenide (WSe2). With a home-built multiphoton microscope setup developed to study harmonics generation, we map the second and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single- and few-layers flakes of WSe2. We register a value of |χ(3)s| ≈ 0.9 × 10-28 m3 V-2 at a fundamental excitation frequency of ℏω = 0.8 eV, which is comparable in magnitude to the third-harmonic susceptibility of other group-VI transition metal dichalcogenides. The simultaneously recorded sheet second-harmonic susceptibility is found to be |χ(2)s| ≈ 0.7 × 10-19 m2 V-1 in very good agreement on the order of magnitude with recent reports for WSe2, which asserts the robustness of our values for |χ(3)s|.
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19
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McCarthy SA, Ratkic R, Purcell-Milton F, Perova TS, Gun'ko YK. Adaptable surfactant-mediated method for the preparation of anisotropic metal chalcogenide nanomaterials. Sci Rep 2018; 8:2860. [PMID: 29434252 PMCID: PMC5809463 DOI: 10.1038/s41598-018-21328-7] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2017] [Accepted: 01/29/2018] [Indexed: 11/09/2022] Open
Abstract
The hot injection synthesis of nanomaterials is a highly diverse and fundamental field of chemical research, which has shown much success in the bottom up approach to nanomaterial design. Here we report a synthetic strategy for the production of anisotropic metal chalcogenide nanomaterials of different compositions and shapes, using an optimised hot injection approach. Its unique advantage compared to other hot injection routes is that it employs one chemical to act as many agents: high boiling point, viscous solvent, reducing agent, and surface coordinating ligand. It has been employed to produce a range of nanomaterials, such as CuS, Bi2S3, Cu2-xSe, FeSe2, and Bi4Se3, among others, with various structures including nanoplates and nanosheets. Overall, this article will highlight the excellent versatility of the method, which can be tuned to produce many different materials and shapes. In addition, due to the nature of the synthesis, 2D nanomaterial products are produced as monolayers without the need for exfoliation; a significant achievement towards future development of these materials.
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Affiliation(s)
- S A McCarthy
- School of Chemistry, Trinity College Dublin, Dublin 2, Ireland.
- CRANN, Trinity College Dublin, Dublin 2, Ireland.
- BEACON, Bioeconomy Research Centre, University College Dublin, Dublin 4, Ireland.
| | - R Ratkic
- School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - F Purcell-Milton
- School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
- CRANN, Trinity College Dublin, Dublin 2, Ireland
| | - T S Perova
- Department of Electronic and Electrical Engineering, Trinity College Dublin, Dublin 2, Ireland
| | - Y K Gun'ko
- School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
- CRANN, Trinity College Dublin, Dublin 2, Ireland
- BEACON, Bioeconomy Research Centre, University College Dublin, Dublin 4, Ireland
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20
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Zhu C(R, Gao D, Ding J, Chao D, Wang J. TMD-based highly efficient electrocatalysts developed by combined computational and experimental approaches. Chem Soc Rev 2018; 47:4332-4356. [DOI: 10.1039/c7cs00705a] [Citation(s) in RCA: 174] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
A thorough review on combined computational and experimental approaches to develop TMD-based highly efficient electrocatalysts by site doping, phase modulation, control of growth morphology and construction of heterostructures.
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Affiliation(s)
- Changrong (Rose) Zhu
- Department of Material Science and Engineering
- National University of Singapore
- Singapore
| | - Daqiang Gao
- Department of Material Science and Engineering
- National University of Singapore
- Singapore
- Key Laboratory for Magnetism and Magnetic Materials of MOE
- Key Laboratory of Special Function Materials and Structure Design of MOE
| | - Jun Ding
- Department of Material Science and Engineering
- National University of Singapore
- Singapore
| | - Dongliang Chao
- School of Physical and Mathematical Science
- Nanyang Technological University
- Singapore
| | - John Wang
- Department of Material Science and Engineering
- National University of Singapore
- Singapore
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21
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Sun X, Wang Z. Ab initio study of adsorption and diffusion of lithium on transition metal dichalcogenide monolayers. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2017; 8:2711-2718. [PMID: 29354342 PMCID: PMC5753063 DOI: 10.3762/bjnano.8.270] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/02/2017] [Accepted: 11/19/2017] [Indexed: 06/07/2023]
Abstract
Using first principles calculations, we studied the stability and electronic properties of transition metal dichalcogenide monolayers of the type MX2 (M = Ti, Zr, Hf, V, Nb, Ta, Mo, Cr, W; X= S, Se, Te). The adsorption and diffusion of lithium on the stable MX2 phase was also investigated for potential application as an anode for lithium ion batteries. Some of these compounds were found to be stable in the 2H phase and some are in the 1T or 1T' phase, but only a few of them were stable in both 2H/1T or 2H/1T' phases. The results show that lithium is energetically favourable for adsorption on MX2 monolayers, which can be semiconductors with a narrow bandgap and metallic materials. Lithium cannot be adsorbed onto 2H-WS2 and 2H-WSe2, which have large bandgaps of 1.66 and 1.96 eV, respectively. The diffusion energy barrier is in the range between 0.17 and 0.64 eV for lithium on MX2 monolayers, while for most of the materials it was found to be around 0.25 eV. Therefore, this work illustrated that most of the MX2 monolayers explored in this work can be used as promising anode materials for lithium ion batteries.
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Affiliation(s)
- Xiaoli Sun
- School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
| | - Zhiguo Wang
- School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
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