Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

Efficient N-Type Organic Electrochemical Transistors and Field-Effect Transistors Based on PNDI-Copolymers Bearing Fluorinated Selenophene-Vinylene-Selenophenes

n-Type organic electrochemical transistors (OECTs) and organic field-effect transistors (OFETs) are less developed than their p-type counterparts. Herein, polynaphthalenediimide (PNDI)-based copolymers bearing novel fluorinated selenophene-vinylene-selenophene (FSVS) units as efficient materials for both n-type OECTs and n-type OFETs are reported. The PNDI polymers with oligo(ethylene glycol) (EG7) side chains P(NDIEG7-FSVS), affords a high µC* of > 0.2 F cm-1  V-1  s-1 , outperforming the benchmark n-type Pg4NDI-T2 and Pg4NDI-gT2 by two orders of magnitude. The deep-lying LUMO of -4.63 eV endows P(NDIEG7-FSVS) with an ultra-low threshold voltage of 0.16 V. Moreover, the conjugated polymer with octyldodecyl (OD) side chains P(NDIOD-FSVS) exhibits a surprisingly low energetic disorder with an Urbach energy of 36 meV and an ultra-low activation energy of 39 meV, resulting in high electron mobility of up to 0.32 cm2  V-1  s-1 in n-type OFETs. These results demonstrate the great potential for simultaneously achieving a lower LUMO and a tighter intermolecular packing for the next-generation efficient n-type organic electronics.

Optical Properties of Perovskite-Organic Multiple Quantum Wells

A comprehensive study of the optical properties of CsPbBr₃ perovskite multiple quantum wells (MQW) with organic barrier layers is presented. Quantum confinement is observed by a blue-shift in absorption and emission spectra with decreasing well width and agrees well with simulations of the confinement energies. A large increase of emission intensity with thinner layers is observed, with a photoluminescence quantum yield up to 32 times higher than that of bulk layers. Amplified spontaneous emission (ASE) measurements show very low thresholds down to 7.3 µJ cm^-2 for a perovskite thickness of 8.7 nm, significantly lower than previously observed for CsPbBr₃ thin-films. With their increased photoluminescence efficiency and low ASE thresholds, MQW structures with CsPbBr₃ are excellent candidates for high-efficiency perovskite-based LEDs and lasers.

Bio-Inspired Motion Mechanisms: Computational Design and Material Programming of Self-Adjusting 4D-Printed Wearable Systems

This paper presents a material programming approach for designing 4D-printed self-shaping material systems based on biological role models. Plants have inspired numerous adaptive systems that move without using any operating energy; however, these systems are typically designed and fabricated in the form of simplified bilayers. This work introduces computational design methods for 4D-printing bio-inspired behaviors with compounded mechanisms. To emulate the anisotropic arrangement of motile plant structures, material systems are tailored at the mesoscale using extrusion-based 3D-printing. The methodology is demonstrated by transferring the principle of force generation by a twining plant (Dioscorea bulbifera) to the application of a self-tightening splint. Through the tensioning of its stem helix, D. bulbifera exhibits a squeezing force on its support to provide stability against gravity. The functional strategies of D. bulbifera are abstracted and translated to customized 4D-printed material systems. The squeezing forces of these bio-inspired motion mechanisms are then evaluated. Finally, the function of self-tightening is prototyped in a wrist-forearm splint-a common orthotic device for alignment. The presented approach enables the transfer of novel and expanded biomimetic design strategies to 4D-printed motion mechanisms, further opening the design space to new types of adaptive creations for wearable assistive technologies and beyond.