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Zhang Q, Xiong Y, Gao Y, Chen J, Hu W, Yang J. First-Principles High-Throughput Inverse Design of Direct Momentum-Matching Band Alignment van der Waals Heterostructures Utilizing Two-Dimensional Indirect Semiconductors. NANO LETTERS 2024; 24:3710-3718. [PMID: 38484178 DOI: 10.1021/acs.nanolett.4c00042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/28/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted widespread attention in photocatalysis. Herein, we employ a novel strategy utilizing first-principles high-throughput inverse design of 2D Z-scheme heterojunctions for photocatalysis. This approach is anchored in high-throughput screening conditions, which are fundamentally based on the characteristics of carrier mechanisms influenced significantly by Z-scheme heterojunctions. A pivotal element of our screening process is the integration of the indirect-to-direct bandgap transition with momentum-matching band alignment in k-space, guiding us to combine two 2D indirect bandgap monolayers into direct Z-scheme heterojunctions characterized by pronounced interlayer excitons. Various stacking modes introduce extra and distinct degrees of freedom that can be useful for tuning the properties of heterostructures, encompassing factors such as components, stacking patterns, and sequences. We demonstrate that various stacking modes can facilitate the indirect-to-direct bandgap transition and the emergence of interlayer excitons. These findings provide exciting opportunities for designing Z-scheme heterojunctions in photocatalysis.
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Affiliation(s)
- Qian Zhang
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yuanfan Xiong
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yunzhi Gao
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jiajia Chen
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Wei Hu
- Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Jinlong Yang
- Key Laboratory of Precision and Intelligent Chemistry, and Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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Wietek E, Florian M, Göser J, Taniguchi T, Watanabe K, Högele A, Glazov MM, Steinhoff A, Chernikov A. Nonlinear and Negative Effective Diffusivity of Interlayer Excitons in Moiré-Free Heterobilayers. PHYSICAL REVIEW LETTERS 2024; 132:016202. [PMID: 38242648 DOI: 10.1103/physrevlett.132.016202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Accepted: 11/10/2023] [Indexed: 01/21/2024]
Abstract
Interlayer exciton diffusion is studied in atomically reconstructed MoSe_{2}/WSe_{2} heterobilayers with suppressed disorder. Local atomic registry is confirmed by characteristic optical absorption, circularly polarized photoluminescence, and g-factor measurements. Using transient microscopy we observe propagation properties of interlayer excitons that are independent from trapping at moiré- or disorder-induced local potentials. Confirmed by characteristic temperature dependence for free particles, linear diffusion coefficients of interlayer excitons at liquid helium temperature and low excitation densities are almost 1000 times higher than in previous observations. We further show that exciton-exciton repulsion and annihilation contribute nearly equally to nonlinear propagation by disentangling the two processes in the experiment and simulations. Finally, we demonstrate effective shrinking of the light emission area over time across several hundreds of picoseconds at the transition from exciton- to the plasma-dominated regimes. Supported by microscopic calculations for band gap renormalization to identify the Mott threshold, this indicates transient crossing between rapidly expanding, short-lived electron-hole plasma and slower, long-lived exciton populations.
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Affiliation(s)
- Edith Wietek
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - Matthias Florian
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Jonas Göser
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, 80539 München, Germany
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Alexander Högele
- Fakultät für Physik, Munich Quantum Center, and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, 80539 München, Germany
- Munich Center for Quantum Science and Technology (MCQST), 80799 München, Germany
| | | | - Alexander Steinhoff
- Institut für Theoretische Physik, Universität Bremen, 28334 Bremen, Germany
- Bremen Center for Computational Materials Science, Universität Bremen, 28334 Bremen, Germany
| | - Alexey Chernikov
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
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3
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Zhang S, Deng X, Wu Y, Wang Y, Ke S, Zhang S, Liu K, Lv R, Li Z, Xiong Q, Wang C. Lateral layered semiconductor multijunctions for novel electronic devices. Chem Soc Rev 2022; 51:4000-4022. [PMID: 35477783 DOI: 10.1039/d1cs01092a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Layered semiconductors, represented by transition metal dichalcogenides, have attached extensive attention due to their unique and tunable electrical and optical properties. In particular, lateral layered semiconductor multijunctions, including homojunctions, heterojunctions, hybrid junctions and superlattices, present a totally new degree of freedom in research on electronic devices beyond traditional materials and their structures, providing unique opportunities for the development of new structures and operation principle-based high performance devices. However, the advances in this field are limited by the precise synthesis of high-quality junctions and greatly hampered by ambiguous device performance limits. Herein, we review the recent key breakthroughs in the design, synthesis, electronic structure and property modulation of lateral semiconductor multijunctions and focus on their application-specific devices. Specifically, the synthesis methods based on different principles, such as chemical and external source-induced methods, are introduced stepwise for the controllable fabrication of semiconductor multijunctions as the basics of device application. Subsequently, their structure and property modulation are discussed, including control of their electronic structure, exciton dynamics and optical properties before the fabrication of lateral layered semiconductor multijunction devices. Precise property control will potentially result in outstanding device performances, including high-quality diodes and FETs, scalable logic and analog circuits, highly efficient optoelectronic devices, and unique electrochemical devices. Lastly, we focus on several of the most essential but unresolved debates in this field, such as the true advantages of few-layer vs. monolayer multijunctions, how sharp the interface should be for specific functional devices, and the superiority of lateral multijunctions over vertical multijunctions, highlighting the next-phase strategy to enhance the performance potential of lateral multijunction devices.
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Affiliation(s)
- Simian Zhang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Xiaonan Deng
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Yifei Wu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Yuqi Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Shengxian Ke
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Shishu Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Ruitao Lv
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Zhengcao Li
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, China.,Frontier Science Center for Quantum Information, Beijing, 100084, China.,Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
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Shang J, Shen S, Wang L, Ma Y, Liao T, Gu Y, Kou L. Stacking-Dependent Interlayer Ferroelectric Coupling and Moiré Domains in a Twisted AgBiP 2Se 6 Bilayer. J Phys Chem Lett 2022; 13:2027-2032. [PMID: 35195428 DOI: 10.1021/acs.jpclett.2c00177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Rotation/twisting of bilayers could induce unprecedented new physics due to stacking-dependent electronic properties and interlayer coupling, such as the superconductivity in twisted bilayer graphene, which can find applications in electronics. However, deep understanding at the atomic/electronic levels is limited by the capability of accurate theoretical simulations. Here, from first-principles simulations, we found that the AgBiP2Se6 bilayer has stacking-dependent ferroelectric ground states due to interlayer polarization coupling. Interlayer ferroelectric coupling is preferred in an AA-stacked AgBiP2Se6 bilayer, but antiferroelectric coupling is preferred in AB- or AC-stacked configurations. The ferroelectric Moiré patterns are thus observed in a twisted AgBiP2Se6 bilayer with ferroelectric (antiferroelectric) interlayer couplings in the AA (AB/AC)-stacked areas. Our work for the first time unveils the effects of twisting/rotation on interlayer polarization coupling and provides a real example of ferroelectric Moiré patterns.
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Affiliation(s)
- Jing Shang
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Shiying Shen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan 250100, China
| | - Lan Wang
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Yandong Ma
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan 250100, China
| | - Ting Liao
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Yuantong Gu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4000, Australia
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Singh A, Jain M, Bhattacharya S. MoS 2 and Janus (MoSSe) based 2D van der Waals heterostructures: emerging direct Z-scheme photocatalysts. NANOSCALE ADVANCES 2021; 3:2837-2845. [PMID: 36134195 PMCID: PMC9417246 DOI: 10.1039/d1na00154j] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Accepted: 03/17/2021] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) materials, viz. transition metal dichalcogenides (TMD) and transition metal oxides (TMO), offer a platform that allows the creation of heterostructures with a variety of properties. The optoelectronic industry has observed an upheaval in the research arena of MoS2 based van der Waals (vdW) heterostructures (HTSs) and Janus structures. Therefore, interest towards these structures is backed by the ability to select their electronic and optical properties. The present study investigates the photocatalytic abilites of bilayer, MoS2 and Janus (MoSSe) based vdW HTSs, viz. MoS2/TMO, MoS2/TMD, MoSSe/TMO and MoSSe/TMD, by a first-principles based approach under the framework of (hybrid) density functional theory (DFT) and many body perturbation theory (GW approximation). We have considered HfS2, ZrS2, TiS2 and WS2, and HfO2, T-SnO2 and T-PtO2 from the families of TMDs and TMOs, respectively. The photocatalytic properties of these vdW HTSs are thoroughly investigated and compared with their respective individual monolayers by visualizing their band edge alignments, electron-hole recombination and optical properties. Strikingly, we observe that, despite most of the individual monolayers not performing optimally as photocatalysts, type II band edge alignment is noticed in vdW HTSs and they appear to be efficient photocatalysts via the Z-scheme. Moreover, these vdW HTSs have also shown promising optical responses in the visible region. Finally, electron-hole recombination, H2O adsorption and hydrogen evolution reaction (HER) results establish that MoSSe/HfS2, MoSSe/TiS2, MoS2/T-SnO2 and MoSSe/ZrS2 are probable highly efficient Z-scheme photocatalysts.
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Affiliation(s)
- Arunima Singh
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
| | - Manjari Jain
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
| | - Saswata Bhattacharya
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India
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6
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Wang S, Cui X, Jian C, Cheng H, Niu M, Yu J, Yan J, Huang W. Stacking-Engineered Heterostructures in Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005735. [PMID: 33719078 DOI: 10.1002/adma.202005735] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2020] [Revised: 10/30/2020] [Indexed: 06/12/2023]
Abstract
The layer-by-layer assembly of 2D transition metal dichalcogenide monolayer blocks to form a 3D stack, with a precisely chosen sequence/angle, is the newest development for these materials. In this way, one can create "van der Waals heterostructures (HSs)," opening up a new realm of materials engineering and novel devices with designed functionalities. Herein, a detailed systematic review of transition metal dichalcogenide stacking-engineered heterostructures, from controllable fabrication to typical characterization, and stacking-correlated physical behaviors is presented. Furthermore, recent advances in stacking design, such as stacking sequence, twist angles, and moiré superlattice heterojunctions, are also comprehensively summarized. Finally, the remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.
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Affiliation(s)
- Shixuan Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Xuehao Cui
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Chang'e Jian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Haowei Cheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Mengmeng Niu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Jia Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Jiaxu Yan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
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7
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Jiang P, Record MC, Boulet P. Electron Density and Its Relation with Electronic and Optical Properties in 2D Mo/W Dichalcogenides. NANOMATERIALS 2020; 10:nano10112221. [PMID: 33171620 PMCID: PMC7695138 DOI: 10.3390/nano10112221] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Revised: 11/04/2020] [Accepted: 11/06/2020] [Indexed: 01/08/2023]
Abstract
Two-dimensional MX2 (M = Mo, W; X = S, Se, Te) homo- and heterostructures have attracted extensive attention in electronics and optoelectronics due to their unique structures and properties. In this work, the layer-dependent electronic and optical properties have been studied by varying layer thickness and stacking order. Based on the quantum theory of atoms in molecules, topological analyses on interatomic interactions of layered MX2 and WX2/MoX2, including bond degree (BD), bond length (BL), and bond angle (BA), have been detailed to probe structure-property relationships. Results show that M-X and X-X bonds are strengthened and weakened in layered MX2 compared to the counterparts in bulks. X-X and M-Se/Te are weakened at compressive strain while strengthened at tensile strain and are more responsive to the former than the latter. Discordant BD variation of individual parts of WX2/MoX2 accounts for exclusively distributed electrons and holes, yielding type-II band offsets. X-X BL correlates positively to binding energy (Eb), while X-X BA correlates negatively to lattice mismatch (lm). The resulting interlayer distance limitation evidences constraint-free lattice of vdW structure. Finally, the connection between microscopic interatomic interaction and macroscopic electromagnetic behavior has been quantified firstly by a cubic equation relating to weighted BD summation and static dielectric constant.
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Affiliation(s)
- Pingping Jiang
- Aix-Marseille University, UFR Sciences, CNRS, MADIREL, 13013 Marseille, France; (P.J.); (P.B.)
| | - Marie-Christine Record
- Aix-Marseille University, UFR Sciences, University of Toulon, CNRS, IM2NP, 13013 Marseille, France
- Correspondence:
| | - Pascal Boulet
- Aix-Marseille University, UFR Sciences, CNRS, MADIREL, 13013 Marseille, France; (P.J.); (P.B.)
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Yang Q, Kou L, Hu X, Wang Y, Lu C, Krasheninnikov AV, Sun L. Strain robust spin gapless semiconductors/half-metals in transition metal embedded MoSe 2monolayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:365305. [PMID: 32369800 DOI: 10.1088/1361-648x/ab9052] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2020] [Accepted: 05/05/2020] [Indexed: 06/11/2023]
Abstract
The realization of spin gapless semiconductor (SGS) and half-metal (HM) behavior in two-dimensional (2D) transition metal (TM) dichalcogenides is highly desirable for their applications in spintronic devices. Here, using density functional theory calculations, we demonstrate that Fe, Co, Ni substitutional impurities can not only induce magnetism in MoSe2monolayer, but also convert the semiconducting MoSe2to SGS/HM system. We also study the effects of mechanical strain on the electronic and magnetic properties of the doped monolayer. We show that for all TM impurities we considered, the system exhibits the robust SGS/HM behavior regardless of biaxial strain values. Moreover, it is found that the magnetic properties of TM-MoSe2can effectively be tuned under biaxial strain by controlling the spin polarization of the 3dorbitals of Fe, Co, Ni atoms. Our findings offer a new route to designing the SGS/HM properties and modulating magnetic characteristics of the TM-MoSe2system and may also facilitate the implementation of SGS/HM behavior and realization of spintronic devices based on other 2D materials.
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Affiliation(s)
- Qiang Yang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Liangzhi Kou
- School of Chemistry, Physics and Mechanical Engineering Faculty, Queensland University of Technology, Garden Point Campus, Brisbane, QLD 4001, Australia
| | - Xiaohui Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Yifeng Wang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Chunhua Lu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden, Germany
- Department of Applied Physics, Aalto University School of Science, PO Box 11100, 00076 Aalto, Finland
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
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Peng G, Yang X, Wang S, Zhang J, Qi G, Zhang S, Liu K, Zhu ZH, Li Z, Wang G, Zhu M, Qin S. Controllable Epitaxial Growth of MoSe 2 Bilayers with Different Stacking Orders by Reverse-Flow Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2020; 12:23347-23355. [PMID: 32343546 DOI: 10.1021/acsami.0c04411] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The stacking order plays a critical role in the electronic and optical properties of two-dimensional materials. It is however of great challenge to achieve large-size and homogeneous bilayer crystals with precisely controlled stacking orders. Here, we demonstrate an optimized chemical vapor deposition strategy to grow MoSe2 bilayers with controlled AA or AB stacking sequences. Reverse gas flow effectively suppresses the random nucleation centers, leading to uniform growth of the second layer of MoSe2 on the first monolayer. A customized temperature profile selectively activates the growth of the MoSe2 bilayer with different stacking orders: the AA stacking MoSe2 bilayer tends to form at 810 °C, and the AB stacking MoSe2 bilayer prefers to grow at a higher temperature of 860 °C. A series of characterization methods confirm that MoSe2 bilayers with different stacking orders exhibit distinct crystal structures and physical properties. Our results demonstrate a robust and effective route for the controllable synthesis of transition metal dichalcogenide bilayers, which will benefit the development of two-dimensional materials and van der Waals heterostructures.
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Affiliation(s)
- Gang Peng
- College of Arts and Science, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Xi Yang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Siyuan Wang
- College of Arts and Science, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, People's Republic of China
| | - Jianyu Zhang
- College of Arts and Science, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Gongjin Qi
- Beijing Aeronautical Technology Research Centre, Beijing 100076, People's Republic of China
| | - Sen Zhang
- College of Arts and Science, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Ken Liu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Zhi Hong Zhu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Zheng Li
- School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, People's Republic of China
| | - Guang Wang
- College of Arts and Science, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, Hunan 410073, People's Republic of China
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10
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Ge L, Yuan H, Min Y, Li L, Chen S, Xu L, Goddard WA. Predicted Optimal Bifunctional Electrocatalysts for the Hydrogen Evolution Reaction and the Oxygen Evolution Reaction Using Chalcogenide Heterostructures Based on Machine Learning Analysis of in Silico Quantum Mechanics Based High Throughput Screening. J Phys Chem Lett 2020; 11:869-876. [PMID: 31927930 DOI: 10.1021/acs.jpclett.9b03875] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Two-dimensional van der Waals heterostructure materials, particularly transition metal dichalcogenides (TMDC), have proved to be excellent photoabsorbers for solar radiation, but performance for such electrocatalysis processes as water splitting to form H2 and O2 is not adequate. We propose that dramatically improved performance may be achieved by combining two independent TMDC while optimizing such descriptors as rotational angle, bond length, distance between layers, and the ratio of the bandgaps of two component materials. In this paper we apply the least absolute shrinkage and selection operator (LASSO) process of artificial intelligence incorporating these descriptors together with quantum mechanics (density functional theory) to predict novel structures with predicted superior performance. Our predicted best system is MoTe2/WTe2 with a rotation of 300°, which is predicted to have an overpotential of 0.03 V for HER and 0.17 V for OER, dramatically improved over current electrocatalysts for water splitting.
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Affiliation(s)
- Lei Ge
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou 215123 , China
| | - Hao Yuan
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou 215123 , China
| | - Yuxiang Min
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou 215123 , China
| | - Li Li
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou 215123 , China
| | - Shiqian Chen
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou 215123 , China
| | - Lai Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou 215123 , China
| | - William A Goddard
- Materials and Process Simulation Center (MSC) and Joint Center for Artificial Photosynthesis (JCAP) , California Institute of Technology , Pasadena , California 91125 , United States
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11
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Yao W, Kang Z, Deng J, Chen Y, Song Q, Ding XL, Lu F, Wang W. Synthesis of 2D MoS2(1−x)Se2x semiconductor alloy by chemical vapor deposition. RSC Adv 2020; 10:42172-42177. [PMID: 35516779 PMCID: PMC9057918 DOI: 10.1039/d0ra07776c] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2020] [Accepted: 11/06/2020] [Indexed: 01/08/2023] Open
Abstract
Alloying/doping in two-dimensional (2D) materials is emerging as an increasingly important strategy due to the wide-range bandgap tunability and versatility of these materials. Monolayer 2D transition metal dichalcogenide (TMD) alloy has been investigated both theoretically and experimentally in recent years. Here, we synthesized a bilayer MoS2(1−x)Se2x semiconductor alloy via the chemical-vapor deposition technique. The as-grown triangular MoS2(1−x)Se2x flakes with size of roughly 10 μm were observed by optical microscope and scanning electron microscope (SEM). The 1.4–1.9 nm thickness of the samples, as measured by AFM, means that bilayer MoS2(1−x)Se2x alloys were grown. The characteristic Raman modes related to Mo–S and Mo–Se vibrations were observed in the Raman spectrum. Two emission peaks were respectively found, corresponding to the A and B excitons in the photoluminescence (PL) spectrum. XPS measurements confirmed the Se doping of the alloy. The first-principles calculation results show a contraction of the band gap value with the increase of Se doping in the MoS2 lattice. Compared with monolayer MoS2(1−x)Se2x alloy, the band bending effect is more obvious, and the bilayer MoS2(1−x)Se2x alloy still shows the direct band gap luminescence characteristic, which has certain guiding significance for the growth of two-dimensional materials and for device preparation. Alloying/doping in two-dimensional (2D) materials is emerging as an increasingly important strategy due to the wide-range bandgap tunability and versatility of these materials.![]()
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Affiliation(s)
- Wenwen Yao
- School of Mathematics and Physics
- North China Electric Power University
- Beijing 102206
- China
- Institute of Clusters and Low Dimensionals
| | - Zhilin Kang
- School of Mathematics and Physics
- North China Electric Power University
- Beijing 102206
- China
| | - Jiajun Deng
- School of Mathematics and Physics
- North China Electric Power University
- Beijing 102206
- China
- Institute of Clusters and Low Dimensionals
| | - Yan Chen
- School of Mathematics and Physics
- North China Electric Power University
- Beijing 102206
- China
- Institute of Clusters and Low Dimensionals
| | - Qian Song
- School of Mathematics and Physics
- North China Electric Power University
- Beijing 102206
- China
| | - Xun Lei Ding
- School of Mathematics and Physics
- North China Electric Power University
- Beijing 102206
- China
- Institute of Clusters and Low Dimensionals
| | - Fangchao Lu
- School of Mathematics and Physics
- North China Electric Power University
- Beijing 102206
- China
- Institute of Clusters and Low Dimensionals
| | - Wenjie Wang
- School of Mathematics and Physics
- North China Electric Power University
- Beijing 102206
- China
- Institute of Clusters and Low Dimensionals
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12
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Barhoumi M, Lazaar K, Bouzidi S, Said M. A DFT study of Janus structure of S and Se in HfSSe layered as a promising candidate for electronic devices. J Mol Graph Model 2019; 96:107511. [PMID: 31881469 DOI: 10.1016/j.jmgm.2019.107511] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2019] [Revised: 11/26/2019] [Accepted: 12/11/2019] [Indexed: 10/25/2022]
Abstract
The transition-metal dichalcogenides are presently being intensively researched because of their unique optoelectronic properties. Further, the success of TMDs in all areas of science without exception has opened the street to find other two-dimensional materials. Based on density functional theory, we study the vibrational and electronic properties of the mixed-phase of S and Se in HfSSe system, i.e, HfSSe monolayer and HfSSe/HfSSe bilayer. In this framework, our systems are full dynamically stable, which shown by their phonon dispersion. Also, we found that the HfSSe (heterolayer) monolayer is an indirect semiconductor (0.63 eV with BLYP), while the HfSSe (alternating) monolayer is a direct semiconductor (0.753 eV with BLYP). Our AA, AB, AA', and AB' of HfSSe/HfSSe (heterolayer) bilayer are indirect band gaps in a range 0.361-0.830 eV, which are promising candidates for electronic devices as field-effect transistors, photodetectors, and other optoelectronics. Nevertheless, HfSSe/HfSSe (alternating) bilayer is a direct bandgap semiconductor with a value of 0.671 eV, when vdW is used.
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Affiliation(s)
- M Barhoumi
- Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Université de Monastir, Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019, Monastir, Tunisia.
| | - K Lazaar
- Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Université de Monastir, Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019, Monastir, Tunisia
| | - S Bouzidi
- Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Université de Monastir, Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019, Monastir, Tunisia
| | - M Said
- Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Université de Monastir, Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019, Monastir, Tunisia
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13
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Zhang M, Pan J, Zhou W, Li A, Ouyang F. Direct/indirect band gap tunability in van der Waals heterojunctions based on ternary 2D materials Mo 1-x W x Y 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:505302. [PMID: 31469091 DOI: 10.1088/1361-648x/ab3f77] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Artificial van der Waals (vdW) heterojunctions assembled by atomically-thin two-dimensional (2D) materials have demonstrated new physical phenomena and unusual properties, thus triggering new electronic, optoelectronic, valleytronic and photocatalytic application. Herein, the electronic band structures of different vdW heterojunctions based on ternary Mo1-x W x Y2 (Y = S, Se; x = 0-1) monolayer with five stacking orders (AA, AA[Formula: see text], A[Formula: see text]B, AB, AB[Formula: see text]) have been investigated using first principle calculations. The direct/indirect band gap has been obtained in the AA[Formula: see text] stacking type-II heterojunctions, ranging from 0.538 eV to 1.260 eV, that are determined by the interlayer distances and stoichiometries. The estimated power conversion efficiency of the AA[Formula: see text] stacking type-II heterojunction varied from 9.1% to 23.4%. The type-I heterojunctions have also been predicted when semiconducting 2H-MoTe2 monolayer stacks with the specific Mo1-x W x Se2 monolayer, which are MoTe2/Mo0.25W0.75Se2 and MoTe2/Mo0.5W0.5Se2. The reported theoretical results can provide broader 2D materials design possibility for the functional devices.
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Affiliation(s)
- Mengjuan Zhang
- School of Physics and Electronics, and Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, Changsha 410083, People's Republic of China
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14
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Ai W, Kou L, Hu X, Wang Y, Krasheninnikov AV, Sun L, Shen X. Enhanced sensitivity of MoSe 2 monolayer for gas adsorption induced by electric field. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:445301. [PMID: 31195380 DOI: 10.1088/1361-648x/ab29d8] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
According to recent studies, gas sensors based on MoSe2 have better detection performance than graphene-based sensors, especially for N-based gas molecules, but the reason for that is not fully understood at the microscopic level. Here, we investigate the adsorption of CO, CO2, NH3, NO and NO2 gas molecules on MoSe2 monolayer by the density functional theory calculations. Our results reveal that indeed MoSe2 monolayer is more sensitive to adsorption of N-containing gas molecules than C-containing, which can be attributed to the distinct charge transfer between the gas molecules and MoSe2. The conductance was further calculated using the nonequilibrium Green's function (NEGF) formalism. The reduced conductance was found for NH3 and NO2 adsorbed MoSe2, consistent with the high sensitivity of MoSe2 for NH3 and NO2 molecules in the recent experiments. In addition, the adsorption sensitivity can significantly be improved by an external electric field, which implies the controllable gas detection by MoSe2. The magnetic moments of adsorbed NO and NO2 molecules can also be effectively modulated by the field-sensitive charge transfer. Our results not only give microscopic explanations to the recent experiments, but also suggest using MoSe2 as a promising material for controlled gas sensing.
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Affiliation(s)
- Wen Ai
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
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15
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Zi Y, Li C, Niu C, Wang F, Cho JH, Jia Y. Reversible direct-indirect band transition in alloying TMDs heterostructures via band engineering. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:435503. [PMID: 31315096 DOI: 10.1088/1361-648x/ab330e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Alloying is a feasible and practical strategy to tune the electronic properties of 2D layered semiconductors. Here, based on first-principles calculations and analysis, we demonstrate band engineering through alloying W into a prototype MoS2/MoSe2 heterostructure. Especially, when the W compositions x > 0.57 in Mo1-x W x S2/MoSe2, it exhibits remarkable and reversible direct- to indirect-gap transition. This is because for Mo1-x W x S2/MoSe2, the valence band maximum located at the K point originates from dominant MoSe2, while the competing Γ state stems from the hybridization of both Mo1-xW x S2 and MoSe2, which is extremely sensitive to the interlayer coupling. Consequently, alloying in MoS2 layer induces direct- to indirect-gap transition and gap increase due to the weakened p-d coupling. We also observe that whether initial alloying in MoS2 or MoSe2, the µMo-µW poor condition should always be used. Our findings are generally applicable and will significantly expand the band engineering to other alloying TMDs heterostructures.
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Affiliation(s)
- Yanbo Zi
- International Laboratory for Quantum Functional Materials of Henan, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
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16
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Yu S, Rice Q, Tabibi B, Li Q, Seo FJ. Piezoelectricity in WSe 2/MoS 2 heterostructure atomic layers. NANOSCALE 2018; 10:12472-12479. [PMID: 29926873 DOI: 10.1039/c8nr04394a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A two-dimensional heterostructure of WSe2/MoS2 atomic layers has unique piezoelectric characteristics which depend on the number of atomic layers, stacking type and interlayer interaction size. The van der Waals heterostructure of p- and n-type TMDC atomic layers with different work functions forms a type-II staggered gap alignment. The large band offset of the conduction band minimum and the valence band maximum between p-type WSe2 and n-type MoS2 atomic layers leads to large electric polarization and piezoelectricity. The output voltages for a MoS2/WSe2 partial vertical heterostructure with a size of 3.0 nm × 1.5 nm were 0.137 V and 0.183 V under 4% and 8% tensile strains, respectively. The output voltage of an AB-stacking MoS2/WSe2 heterostructure was larger than that of an AA-stacking heterostructure under 4% tensile strain due to the contribution of intrinsic piezoelectricity and symmetric out-of-plane conditions. The AB-stacking has a lower formation energy and better structural stability compared to AA-stacking. The large output voltage of nanoscale partial or full vertical heterostructures of 2D WSe2/MoS2 atomic layers in addition to the increased output voltage through the series connection of multiple nanoscale piezoelectric devices will enable the realization of nano-electromechanical systems (NEMS) with TMDC heterostructure atomic layers.
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Affiliation(s)
- Sheng Yu
- Advanced Center for Laser Science and Spectroscopy, Department of Physics, Hampton University, Hampton, VA 23668, USA.
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17
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Wang H, Wei W, Li F, Huang B, Dai Y. Step-like band alignment and stacking-dependent band splitting in trilayer TMD heterostructures. Phys Chem Chem Phys 2018; 20:25000-25008. [DOI: 10.1039/c8cp05200j] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
We propose a kind of trilayer TMD heterostructure with step-like band alignment, and the effects of interlayer coupling, strain and SOC are also discussed.
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Affiliation(s)
- Hao Wang
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Wei Wei
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Fengping Li
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Baibiao Huang
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
| | - Ying Dai
- School of Physics
- State Key Laboratory of Crystal Materials
- Shandong University
- Jinan
- China
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18
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Susarla S, Kutana A, Hachtel JA, Kochat V, Apte A, Vajtai R, Idrobo JC, Yakobson BI, Tiwary CS, Ajayan PM. Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1702457. [PMID: 28707411 DOI: 10.1002/adma.201702457] [Citation(s) in RCA: 81] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2017] [Revised: 05/21/2017] [Indexed: 06/07/2023]
Abstract
Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys Mox W1-x S2y Se2(1-y) is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.
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Affiliation(s)
- Sandhya Susarla
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Alex Kutana
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Vidya Kochat
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Amey Apte
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Robert Vajtai
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | - Juan Carlos Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Boris I Yakobson
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
| | | | - Pulickel M Ajayan
- Materials Science and Nano Engineering, Rice University, Houston, TX, 77005, USA
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