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Jeon MJ, Hyeong SK, Jang HY, Mun J, Kim TW, Bae S, Lee SK. Selective Laser-Assisted Direct Synthesis of MoS 2 for Graphene/MoS 2 Schottky Junction. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2937. [PMID: 37999291 PMCID: PMC10674199 DOI: 10.3390/nano13222937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 11/08/2023] [Accepted: 11/10/2023] [Indexed: 11/25/2023]
Abstract
Implementing a heterostructure by vertically stacking two-dimensional semiconductors is necessary for responding to various requirements in the future of semiconductor technology. However, the chemical-vapor deposition method, which is an existing two-dimensional (2D) material-processing method, inevitably causes heat damage to surrounding materials essential for functionality because of its high synthesis temperature. Therefore, the heterojunction of a 2D material that directly synthesized MoS2 on graphene using a laser-based photothermal reaction at room temperature was studied. The key to the photothermal-reaction mechanism is the difference in the photothermal absorption coefficients of the materials. The device in which graphene and MoS2 were vertically stacked using a laser-based photothermal reaction demonstrated its potential application as a photodetector that responds to light and its stability against cycling. The laser-based photothermal-reaction method for 2D materials will be further applied to various fields, such as transparent display electrodes, photodetectors, and solar cells, in the future.
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Affiliation(s)
- Min Ji Jeon
- School of Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea; (M.J.J.)
| | - Seok-Ki Hyeong
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju 55324, Republic of Korea
| | - Hee Yoon Jang
- School of Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea; (M.J.J.)
| | - Jihun Mun
- Advanced Instrumentation Institute, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
| | - Tae-Wook Kim
- Department of Flexible and Printable Electronics, Jeonbuk National University, Jeonju-si 54896, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonju-si 54896, Republic of Korea
| | - Sukang Bae
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonju-si 54896, Republic of Korea
| | - Seoung-Ki Lee
- School of Material Science and Engineering, Pusan National University, Busan 46241, Republic of Korea; (M.J.J.)
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2
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Småbråten D, Nylund IE, Marshall K, Walker J, Benelmekki M, Einarsrud MA, Kioseoglou J, Selbach SM. Electronic Structure and Surface Chemistry of Hexagonal Boron Nitride on HOPG and Nickel Substrates. ACS OMEGA 2023; 8:24813-24830. [PMID: 37483195 PMCID: PMC10357548 DOI: 10.1021/acsomega.3c00562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Accepted: 06/21/2023] [Indexed: 07/25/2023]
Abstract
The effect of point defects and interactions with the substrate are shown by density functional theory calculations to be of significant importance for the structure and functional properties of hexagonal boron nitride (h-BN) films on highly ordered pyrolytic graphite (HOPG) and Ni(111) substrates. The structure, surface chemistry, and electronic properties are calculated for h-BN systems with selected intrinsic, oxygen, and carbon defects and with graphene hybrid structures. The electronic structure of a pristine monolayer of h-BN is dependent on the type of substrate, as h-BN is decoupled electronically from the HOPG surface and acts as bulk-like h-BN, whereas on a Ni(111) substrate, metallic-like behavior is predicted. These different film/substrate systems therefore show different reactivities and defect chemistries. The formation energies for substitutional defects are significantly lower than for intrinsic defects regardless of the substrate, and vacancies formed during film deposition are expected to be filled by either ambient oxygen or carbon from impurities. Significantly lower formation energies for intrinsic and oxygen and carbon substitutional defects were predicted for h-BN on Ni(111). In-plane h-BCN hybrid structures were predicted to be terminated by N-C bonding. Substitutional carbon on the boron site imposes n-type semiconductivity in h-BN, and the n-type character increases significantly for h-BN on HOPG. The h-BN film surface becomes electronically decoupled from the substrate when exceeding monolayer thickness, showing that the surface electronic properties and point defect chemistry for multilayer h-BN films should be comparable to those of a freestanding h-BN layer.
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Affiliation(s)
- Didrik
René Småbråten
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
- Department
of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Inger-Emma Nylund
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Kenneth Marshall
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Julian Walker
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Maria Benelmekki
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Mari-Ann Einarsrud
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Joseph Kioseoglou
- Department
of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Sverre M. Selbach
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
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3
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Som A, Griffo A, Chakraborty I, Hähl H, Mondal B, Chakraborty A, Jacobs K, Laaksonen P, Ikkala O, Pradeep T. Strong and Elastic Membranes via Hydrogen Bonding Directed Self-Assembly of Atomically Precise Nanoclusters. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201707. [PMID: 35914899 DOI: 10.1002/smll.202201707] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Revised: 05/09/2022] [Indexed: 06/15/2023]
Abstract
2D nanomaterials have provided an extraordinary palette of mechanical, electrical, optical, and catalytic properties. Ultrathin 2D nanomaterials are classically produced via exfoliation, delamination, deposition, or advanced synthesis methods using a handful of starting materials. Thus, there is a need to explore more generic avenues to expand the feasibility to the next generation 2D materials beyond atomic and molecular-level covalent networks. In this context, self-assembly of atomically precise noble nanoclusters can, in principle, suggest modular approaches for new generation 2D materials, provided that the ligand engineering allows symmetry breaking and directional internanoparticle interactions. Here the self-assembly of silver nanoclusters (NCs) capped with p-mercaptobenzoic acid ligands (Na4 Ag44 -pMBA30 ) into large-area freestanding membranes by trapping the NCs in a transient solvent layer at air-solvent interfaces is demonstrated. The patchy distribution of ligand bundles facilitates symmetry breaking and preferential intralayer hydrogen bondings resulting in strong and elastic membranes. The membranes with Young's modulus of 14.5 ± 0.2 GPa can readily be transferred to different substrates. The assemblies allow detection of Raman active antibiotic molecules with high reproducibility without any need for substrate pretreatment.
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Affiliation(s)
- Anirban Som
- Department of Applied Physics, Aalto University, Espoo, FI-02150, Finland
| | - Alessandra Griffo
- Department of Bioproducts and Biosystems, Aalto University, Espoo, FI-02150, Finland
- Department of Experimental Physics, Saarland University, 66123, Saarbrücken, Germany
- Max Planck School Matter to Life, Jahnstraße 29, 69120, Heidelberg, Germany
| | - Indranath Chakraborty
- DST Unit of Nanoscience and Thematic Unit of Excellence, Department of Chemistry, Indian Institute of Technology Madras, Chennai, 600036, India
- School of Nano Science and Technology, Indian Institute of Technology, Kharagpur, 721302, India
| | - Hendrik Hähl
- Department of Experimental Physics, Saarland University, 66123, Saarbrücken, Germany
| | - Biswajit Mondal
- DST Unit of Nanoscience and Thematic Unit of Excellence, Department of Chemistry, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Amrita Chakraborty
- DST Unit of Nanoscience and Thematic Unit of Excellence, Department of Chemistry, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Karin Jacobs
- Department of Experimental Physics, Saarland University, 66123, Saarbrücken, Germany
- Max Planck School Matter to Life, Jahnstraße 29, 69120, Heidelberg, Germany
| | - Päivi Laaksonen
- Department of Bioproducts and Biosystems, Aalto University, Espoo, FI-02150, Finland
| | - Olli Ikkala
- Department of Applied Physics, Aalto University, Espoo, FI-02150, Finland
- Department of Bioproducts and Biosystems, Aalto University, Espoo, FI-02150, Finland
| | - Thalappil Pradeep
- DST Unit of Nanoscience and Thematic Unit of Excellence, Department of Chemistry, Indian Institute of Technology Madras, Chennai, 600036, India
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4
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From Quantum Materials to Microsystems. MATERIALS 2022; 15:ma15134478. [PMID: 35806603 PMCID: PMC9267837 DOI: 10.3390/ma15134478] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Revised: 06/21/2022] [Accepted: 06/21/2022] [Indexed: 12/04/2022]
Abstract
The expression “quantum materials” identifies materials whose properties “cannot be described in terms of semiclassical particles and low-level quantum mechanics”, i.e., where lattice, charge, spin and orbital degrees of freedom are strongly intertwined. Despite their intriguing and exotic properties, overall, they appear far away from the world of microsystems, i.e., micro-nano integrated devices, including electronic, optical, mechanical and biological components. With reference to ferroics, i.e., functional materials with ferromagnetic and/or ferroelectric order, possibly coupled to other degrees of freedom (such as lattice deformations and atomic distortions), here we address a fundamental question: “how can we bridge the gap between fundamental academic research focused on quantum materials and microsystems?”. Starting from the successful story of semiconductors, the aim of this paper is to design a roadmap towards the development of a novel technology platform for unconventional computing based on ferroic quantum materials. By describing the paradigmatic case of GeTe, the father compound of a new class of materials (ferroelectric Rashba semiconductors), we outline how an efficient integration among academic sectors and with industry, through a research pipeline going from microscopic modeling to device applications, can bring curiosity-driven discoveries to the level of CMOS compatible technology.
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5
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The Growth of Hexagonal Boron Nitride Quantum Dots on Polycrystalline Nickel Films by Plasma-Assisted Molecular Beam Epitaxy. CRYSTALS 2022. [DOI: 10.3390/cryst12030347] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In this report, quantum dots of hexagonal boron nitride (h-BN) were fabricated on the surface of polycrystalline Ni film at low growth temperatures (700, 750, and 800 °C) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction could trace the surface condition during the growth and perform the formation of BN. The observation of surface morphology by scanning electron microscopy and atomic force microscopy showed the nanodots of BN on Ni films. The existence of crystal h-BN quantum dots was determined by the analysis of Raman spectra and Kevin probe force microscopy. The cathodoluminescence of h-BN quantum dots performed at the wavelength of 546 and 610 nm, attributed to the trapping centers involving impurities and vacancies. Moreover, the influence of temperatures for the substrate and boron source cell was also investigated in the report. When the k-cell temperature of boron and growth temperature of substrate increased, the emission intensity of cathodoluminescence spectra increased, indicating the better growth parameters for h-BN quantum dots.
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6
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Zdanowicz E, Herman AP, Opołczyńska K, Gorantla S, Olszewski W, Serafińczuk J, Hommel D, Kudrawiec R. Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6131-6137. [PMID: 35043636 PMCID: PMC8815035 DOI: 10.1021/acsami.1c20352] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2021] [Accepted: 01/05/2022] [Indexed: 05/27/2023]
Abstract
Hexagonal boron nitride (h-BN), together with other members of the van der Waals crystal family, has been studied for over a decade, both in terms of fundamental and applied research. Up to now, the spectrum of h-BN-based devices has broadened significantly, and systems containing the h-BN/III-V junctions have gained substantial interest as building blocks in, inter alia, light emitters, photodetectors, or transistor structures. Therefore, the understanding of electronic phenomena at the h-BN/III-V interfaces becomes a question of high importance regarding device engineering. In this study, we present the investigation of electronic phenomena at the h-BN/GaN interface by means of contactless electroreflectance (CER) spectroscopy. This nondestructive method enables precise determination of the Fermi level position at the h-BN/GaN interface and the investigation of carrier transport across the interface. CER results showed that h-BN induces an enlargement of the surface barrier height at the GaN surface. Such an effect translates to Fermi level pinning deeper inside the GaN band gap. As an explanation, we propose a mechanism based on electron transfer from GaN surface states to the native acceptor states in h-BN. We reinforced our findings by thorough structural characterization and demonstration of the h-BN/GaN Schottky diode. The surface barriers obtained from CER (0.60 ± 0.09 eV for GaN and 0.91 ± 0.12 eV for h-BN/GaN) and electrical measurements are consistent within the experimental accuracy, proving that CER is an excellent tool for interfacial studies of 2D/III-V hybrids.
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Affiliation(s)
- Ewelina Zdanowicz
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
- Department
of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland
| | - Artur P. Herman
- Department
of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland
| | - Katarzyna Opołczyńska
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
- Institute
of Experimental Physics, University of Wrocław, pl. M. Borna 9, Wrocław 50-204, Poland
| | - Sandeep Gorantla
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
| | - Wojciech Olszewski
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
| | - Jarosław Serafińczuk
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
- Department
of Nanometrology, Wrocław University
of Science and Technology, Janiszewskiego 11/17, Wrocław 50-372, Poland
| | - Detlef Hommel
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
| | - Robert Kudrawiec
- Łukasiewicz
Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław 54-066, Poland
- Department
of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland
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7
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Roy S, Zhang X, Puthirath AB, Meiyazhagan A, Bhattacharyya S, Rahman MM, Babu G, Susarla S, Saju SK, Tran MK, Sassi LM, Saadi MASR, Lai J, Sahin O, Sajadi SM, Dharmarajan B, Salpekar D, Chakingal N, Baburaj A, Shuai X, Adumbumkulath A, Miller KA, Gayle JM, Ajnsztajn A, Prasankumar T, Harikrishnan VVJ, Ojha V, Kannan H, Khater AZ, Zhu Z, Iyengar SA, Autreto PADS, Oliveira EF, Gao G, Birdwell AG, Neupane MR, Ivanov TG, Taha-Tijerina J, Yadav RM, Arepalli S, Vajtai R, Ajayan PM. Structure, Properties and Applications of Two-Dimensional Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101589. [PMID: 34561916 DOI: 10.1002/adma.202101589] [Citation(s) in RCA: 94] [Impact Index Per Article: 31.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2021] [Revised: 05/24/2021] [Indexed: 05/09/2023]
Abstract
Hexagonal boron nitride (h-BN) has emerged as a strong candidate for two-dimensional (2D) material owing to its exciting optoelectrical properties combined with mechanical robustness, thermal stability, and chemical inertness. Super-thin h-BN layers have gained significant attention from the scientific community for many applications, including nanoelectronics, photonics, biomedical, anti-corrosion, and catalysis, among others. This review provides a systematic elaboration of the structural, electrical, mechanical, optical, and thermal properties of h-BN followed by a comprehensive account of state-of-the-art synthesis strategies for 2D h-BN, including chemical exfoliation, chemical, and physical vapor deposition, and other methods that have been successfully developed in recent years. It further elaborates a wide variety of processing routes developed for doping, substitution, functionalization, and combination with other materials to form heterostructures. Based on the extraordinary properties and thermal-mechanical-chemical stability of 2D h-BN, various potential applications of these structures are described.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ashokkumar Meiyazhagan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Muhammad M Rahman
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ganguli Babu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sandhya Susarla
- Materials Science Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA, 94720, USA
| | - Sreehari K Saju
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Mai Kim Tran
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Lucas M Sassi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - M A S R Saadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jiawei Lai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Onur Sahin
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Seyed Mohammad Sajadi
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Bhuvaneswari Dharmarajan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Devashish Salpekar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Nithya Chakingal
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Abhijit Baburaj
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Xinting Shuai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Aparna Adumbumkulath
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Kristen A Miller
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Jessica M Gayle
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Alec Ajnsztajn
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Thibeorchews Prasankumar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | | | - Ved Ojha
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Harikishan Kannan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Ali Zein Khater
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Zhenwei Zhu
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Sathvik Ajay Iyengar
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pedro Alves da Silva Autreto
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Center for Natural and Human Sciences, Federal University of ABC (UFABC), Av. Dos Estados, 5001-Bangú, Santo André - SP, Santo André, 09210-580, Brazil
| | - Eliezer Fernando Oliveira
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Applied Physics Department, State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
- Center for Computational Engineering and Sciences (CCES), State University of Campinas - UNICAMP, Campinas, São Paulo, 13083-859, Brazil
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - A Glen Birdwell
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Mahesh R Neupane
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Tony G Ivanov
- Combat Capabilities Development Command, U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783, USA
| | - Jaime Taha-Tijerina
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Engineering Department, Universidad de Monterrey, Av. Ignacio Morones Prieto 4500 Pte., San Pedro Garza Garcí, Monterrey, Nuevo Leon, 66238, Mexico
- Department of Manufacturing and Industrial Engineering, University of Texas Rio Grande Valley, Brownsville, TX, 78520, USA
| | - Ram Manohar Yadav
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
- Department of Physics, VSSD College, Kanpur, Uttar Pradesh, 208002, India
| | - Sivaram Arepalli
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, 6100 Main St., Houston, TX, 77005, USA
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8
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Sattar A, Moazzam U, Bashir AI, Reza A, Latif H, Usman A, Amjad RJ, Mubshrah A, Nasir A. Proposal of graphene band-gap enhancement via heterostructure of graphene with boron nitride in vertical stacking scheme. NANOTECHNOLOGY 2021; 32:225705. [PMID: 33601353 DOI: 10.1088/1361-6528/abe789] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2020] [Accepted: 02/18/2021] [Indexed: 06/12/2023]
Abstract
Since the discovery of graphene and other two-dimensional (2D) materials in recent years, heterostructures composed of multilayered 2D materials have attracted immense research interest. This is mainly due to the potential prospects of the heterostructures for basic and applied applications related to the emerging technology of energy-efficient optoelectronic devices. In particular, heterostructures of graphene with 2D materials of similar structure have been proposed to open up the band gap to tune the transport properties of graphene for a variety of technological applications. In this paper, we propose a heterostructure scheme of band-gap engineering and modification of the electronic band structure of graphene via the heterostructure of graphene-boron nitride (GBN) based on first-principles calculations. For a comparative analysis of the properties of the proposed GBN heterostructure, we employ Kohn-Sham density functional theory (DFT) using local density and generalized gradient approximations within Perdew-Burke-Ernzehof parameterization. To account for weak interlayer van der Waals interactions, we employ the semi-empirical dispersion-corrected DFT scheme of Grimme, called the DFT-D2 approximation. In the vertical stacking arrangement of boron-nitride-doped graphene with hexagonal boron nitride, we predict a band-gap opening of 1.12 eV which, to our knowledge, is the largest value attained for this kind of system. The impact of interlayer spacing on the band-gap opening arising from the interlayer coupling effect is also analyzed. The band-gap enhancement supports the widely proposed promise of GBN heterostructure in design of high-performance optoelectronic devices such as field-effect transistors for potential applications.
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Affiliation(s)
- Abdul Sattar
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Uzair Moazzam
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Azmat Iqbal Bashir
- Faculty of Engineering and Applied Sciences, Department of Physics, Riphah International University Islamabad, Pakistan
| | - Ali Reza
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Hamid Latif
- Department of Physics Forman Christian College University, Lahore, Pakistan
| | - Arslan Usman
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
- Faculty of Physics and Materials Sciences Centre, Philipps-Universität Marburg-35032 Marburg, Germany
| | - Raja Junaid Amjad
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Ayesha Mubshrah
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Abdullah Nasir
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
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9
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Gbadamasi S, Mohiuddin M, Krishnamurthi V, Verma R, Khan MW, Pathak S, Kalantar-Zadeh K, Mahmood N. Interface chemistry of two-dimensional heterostructures - fundamentals to applications. Chem Soc Rev 2021; 50:4684-4729. [PMID: 33621294 DOI: 10.1039/d0cs01070g] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.
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10
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Rigosi AF, Levy AL, Snure MR, Glavin NR. Turn of the decade: versatility of 2D hexagonal boron nitride. JPHYS MATERIALS 2021; 4:10.1088/2515-7639/abf1ab. [PMID: 34409257 PMCID: PMC8370033 DOI: 10.1088/2515-7639/abf1ab] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The era of two-dimensional (2D) materials, in its current form, truly began at the time that graphene was first isolated just over 15 years ago. Shortly thereafter, the use of 2D hexagonal boron nitride (h-BN) had expanded in popularity, with use of the thin isolator permeating a significant number of fields in condensed matter and beyond. Due to the impractical nature of cataloguing every use or research pursuit, this review will cover ground in the following three subtopics relevant to this versatile material: growth, electrical measurements, and applications in optics and photonics. Through understanding how the material has been utilized, one may anticipate some of the exciting directions made possible by the research conducted up through the turn of this decade.
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Affiliation(s)
- Albert F Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Antonio L Levy
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Michael R Snure
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
| | - Nicholas R Glavin
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, OH 45433, United States
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11
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Heilmann M, Prikhodko AS, Hanke M, Sabelfeld A, Borgardt NI, Lopes JMJ. Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:8897-8907. [PMID: 31971775 DOI: 10.1021/acsami.9b21490] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Combining graphene and the insulating hexagonal boron nitride (h-BN) into two-dimensional heterostructures is promising for novel, atomically thin electronic nanodevices. A heteroepitaxial growth, in which these materials are grown on top of each other, will be crucial for their scalable device integration. However, during this so-called van der Waals epitaxy, not only the atomically thin substrate itself must be considered but also the influences from the supporting substrate below it. Here, we report not only a substantial difference between the formation of h-BN on single- (SLG) and on bi-layer epitaxial graphene (BLG) on SiC, but also vice versa, that the van der Waals epitaxy of h-BN at growth temperatures well below 1000 °C affects the varying number of graphene layers differently. Our results clearly demonstrate that the additional graphene layer in BLG enhances the distance to the corrugated, carbon-rich interface of the supporting SiC substrate and thereby diminishes its influence on the van der Waals epitaxy, leading to a homogeneous formation of a smooth, atomically thin heterostructure, which will be required for a scalable device integration of 2D heterostructures.
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Affiliation(s)
- Martin Heilmann
- Leibniz-Institut im Forschungsverbund Berlin e.V. , Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Alexander S Prikhodko
- National Research University of Electronic Technology (MIET) , Zelenograd 124498 , Moscow , Russia
| | - Michael Hanke
- Leibniz-Institut im Forschungsverbund Berlin e.V. , Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Alexander Sabelfeld
- Leibniz-Institut im Forschungsverbund Berlin e.V. , Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Nikolai I Borgardt
- National Research University of Electronic Technology (MIET) , Zelenograd 124498 , Moscow , Russia
| | - J Marcelo J Lopes
- Leibniz-Institut im Forschungsverbund Berlin e.V. , Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
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12
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Martynec T, Klapp SHL. Modeling of nonequilibrium surface growth by a limited-mobility model with distributed diffusion length. Phys Rev E 2019; 100:033307. [PMID: 31639962 DOI: 10.1103/physreve.100.033307] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2019] [Indexed: 11/07/2022]
Abstract
Kinetic Monte Carlo (KMC) simulations are a well-established numerical tool to investigate the time-dependent surface morphology in molecular beam epitaxy experiments. In parallel, simplified approaches such as limited mobility (LM) models characterized by a fixed diffusion length have been studied. Here we investigate an extended LM model to gain deeper insight into the role of diffusional processes concerning the growth morphology. Our model is based on the stochastic transition rules of the Das Sarma-Tamborena model but differs from the latter via a variable diffusion length. A first guess for this length can be extracted from the saturation value of the mean-squared displacement calculated from short KMC simulations. Comparing the resulting surface morphologies in the sub- and multilayer growth regime to those obtained from KMC simulations, we find deviations which can be cured by adding fluctuations to the diffusion length. This mimics the stochastic nature of particle diffusion on a substrate, an aspect which is usually neglected in LM models. We propose to add fluctuations to the diffusion length by choosing this quantity for each adsorbed particle from a Gaussian distribution, where the variance of the distribution serves as a fitting parameter. We show that the diffusional fluctuations have a huge impact on cluster properties during submonolayer growth as well as on the surface profile in the high coverage regime. The analysis of the surface morphologies on one- and two-dimensional substrates during sub- and multilayer growth shows that the LM model can produce structures that are indistinguishable to the ones from KMC simulations at arbitrary growth conditions.
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Affiliation(s)
- Thomas Martynec
- Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
| | - Sabine H L Klapp
- Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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13
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Benter S, Dubrovskii VG, Bartmann M, Campo A, Zardo I, Sistani M, Stöger-Pollach M, Lancaster S, Detz H, Lugstein A. Quasi One-Dimensional Metal-Semiconductor Heterostructures. NANO LETTERS 2019; 19:3892-3897. [PMID: 31117757 DOI: 10.1021/acs.nanolett.9b01076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The band offsets occurring at the abrupt heterointerfaces of suitable material combinations offer a powerful design tool for high performance or even new kinds of devices. Because of a large variety of applications for metal-semiconductor heterostructures and the promise of low-dimensional systems to present exceptional device characteristics, nanowire heterostructures gained particular interest over the past decade. However, compared to those achieved by mature two-dimensional processing techniques, quasi one-dimensional (1D) heterostructures often suffer from low interface and crystalline quality. For the GaAs-Au system, we demonstrate exemplarily a new approach to generate epitaxial and single crystalline metal-semiconductor nanowire heterostructures with atomically sharp interfaces using standard semiconductor processing techniques. Spatially resolved Raman measurements exclude any significant strain at the lattice mismatched metal-semiconductor heterojunction. On the basis of experimental results and simulation work, a novel self-assembled mechanism is demonstrated which yields one-step reconfiguration of a semiconductor-metal core-shell nanowire to a quasi 1D axially stacked heterostructure via flash lamp annealing. Transmission electron microscopy imaging and electrical characterization confirm the high interface quality resulting in the lowest Schottky barrier for the GaAs-Au system reported to date. Without limiting the generality, this novel approach will open up new opportunities in the syntheses of other metal-semiconductor nanowire heterostructures and thus facilitate the research of high-quality interfaces in metal-semiconductor nanocontacts.
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Affiliation(s)
- S Benter
- Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria
- Division of Synchrotron Radiation Research , Lund University , Sölvegatan 14 , 221 00 Lund , Sweden
| | - V G Dubrovskii
- ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia
| | - M Bartmann
- Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria
| | - A Campo
- Department of Physics , University of Basel , Klingelbergstrasse 82 , 4056 Basel , Switzerland
| | - I Zardo
- Department of Physics , University of Basel , Klingelbergstrasse 82 , 4056 Basel , Switzerland
| | - M Sistani
- Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria
| | - M Stöger-Pollach
- University Service Center for TEM , TU Wien , Wiedner Hauptstraße 8-10 , 1040 Vienna Austria
| | - S Lancaster
- Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria
| | - H Detz
- Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria
- Central European Institute of Technology , Brno University of Technology , Purkyňova 123 , 612 00 Brno , Czech Republic
| | - A Lugstein
- Institute of Solid State Electronics , TU Wien , Gußhausstraße 25-25a , 1040 Vienna , Austria
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Meng J, Wang D, Cheng L, Gao M, Zhang X. Recent progress in synthesis, properties, and applications of hexagonal boron nitride-based heterostructures. NANOTECHNOLOGY 2019; 30:074003. [PMID: 30523895 DOI: 10.1088/1361-6528/aaf301] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Featuring an absence of dangling bonds, large band gap, low dielectric constant, and excellent chemical inertness, atomically thin hexagonal boron nitride (h-BN) is considered an ideal candidate for integration with graphene and other 2D materials. During the past years, great efforts have been devoted to the research of h-BN-based heterostructures, from fundamental study to practical applications. In this review we summarize the recent progress in the synthesis, novel properties, and potential applications of h-BN-based heterostructures, especially the synthesis technique. Firstly, various approaches to the preparation of both in-plane and vertically stacked h-BN-based heterostructures are introduced in detail, including top-down strategies associated with exfoliation transfer processes and bottom-up strategies such as chemical vapor deposition (CVD)-based growth. Secondly, we discuss some novel properties arising in these heterostructures. Several promising applications in electronic and optoelectronic devices are also reviewed. Finally, we discuss the main challenges and possible research directions in this field.
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Affiliation(s)
- Junhua Meng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 & College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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15
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Antoniuk ER, Cheon G, Krishnapriyan A, Rehn DA, Zhou Y, Reed EJ. New Assembly-Free Bulk Layered Inorganic Vertical Heterostructures with Infrared and Optical Bandgaps. NANO LETTERS 2019; 19:142-149. [PMID: 30525679 DOI: 10.1021/acs.nanolett.8b03500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In principle, a nearly endless number of unique van der Waals heterostructures can be created through the vertical stacking of two-dimensional (2D) materials, resulting in unprecedented potential for material design. However, this widely employed synthetic method for generating van der Waals heterostructures is slow, imprecise, and prone to introducing interlayer contaminants when compared with synthesis methods that are scalable to industrially relevant scales. Herein, we study the properties of a new class of layered bulk inorganic materials that has recently been reported that we call assembly-free bulk layered inorganic heterostructures, wherein the individual layers are of dissimilar chemical composition, distinguishing them from commonly studied layered materials. We find that these bulk materials exhibit properties similar to vertical heterostructures but without the complex and unscalable stacking process. Using state-of-the-art computational approaches, we study the electronic properties of livingstonite (HgSb4S8), a naturally occurring mineral that is a bulk lattice-commensurate heterostructure. We find that isolated bilayers of livingstonite have an intralayer HSE-06 band gap of 2.08 eV. This is the first report of a naturally occurring van der Waals heterostructure with a calculated band gap in the visible spectrum. We also studied the electronic properties of tetragonal Ti3Bi4O12, Sm2Ti3Bi2O12, orthorhombic Ti3Bi4O12, Nb3Bi5O15, LaTiNbBi2O9, and AgPbBrO and found some of them are potentially well-suited for photovoltaic applications. We also provide characterization of the electronic structure of the isolated bilayer and monolayer subcomponents of the bulk heterostructures. The report of the properties of these materials significantly enhances the library of known van der Waals heterostructures.
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Laleyan DA, Mengle K, Zhao S, Wang Y, Kioupakis E, Mi Z. Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy. OPTICS EXPRESS 2018; 26:23031-23039. [PMID: 30184959 DOI: 10.1364/oe.26.023031] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2018] [Accepted: 08/11/2018] [Indexed: 05/28/2023]
Abstract
We have studied the epitaxy of few-layer hexagonal boron nitride (h-BN) by plasma-assisted molecular beam epitaxy (MBE) using a low growth rate and nitrogen-rich condition. It has been determined that under such conditions, the growth temperature is the factor having the most significant impact on the structural and optical quality of the material. When grown at temperatures <1000 °C, the h-BN film is polycrystalline, and defect-related photoluminescence (PL) emission dominates. Epitaxial domains of exceptional crystalline quality are obtained at elevated substrate temperatures of ~1300 °C, which exhibit strong band-edge PL emission at ~220 nm and negligible defect-related emission at room temperature. Our atomistic calculations reveal that, even though the gap of h-BN is indirect, it luminesces as strongly as direct-gap materials. Experimentally, the luminescence intensity of such a few-layer h-BN sample is measured to be two orders of magnitude stronger than that of a 4-µm thick commercially grown AlN template on sapphire, demonstrating the extraordinary potential of epitaxial h-BN for deep ultraviolet (UV) optoelectronics and quantum photonics.
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17
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Cheng TS, Summerfield A, Mellor CJ, Khlobystov AN, Eaves L, Foxon CT, Beton PH, Novikov SV. High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E1119. [PMID: 29966333 PMCID: PMC6073546 DOI: 10.3390/ma11071119] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/07/2018] [Revised: 06/25/2018] [Accepted: 06/26/2018] [Indexed: 11/28/2022]
Abstract
Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of highly oriented pyrolytic graphite at high substrate temperatures of ~1400 °C. The current paper will present data on the high-temperature PA-MBE growth of hBN layers using a high-efficiency radio-frequency (RF) nitrogen plasma source. Despite more than a three-fold increase in nitrogen flux with this new source, we saw no significant increase in the growth rates of the hBN layers, indicating that the growth rate of hBN layers is controlled by the boron arrival rate. The hBN thickness increases to 90 nm with decrease in the growth temperature to 1080 °C. However, the decrease in the MBE temperature led to a deterioration in the optical properties of the hBN. The optical absorption data indicates that an increase in the active nitrogen flux during the PA-MBE process improves the optical properties of hBN and suppresses defect related optical absorption in the energy range 5.0⁻5.5 eV.
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Affiliation(s)
- Tin S Cheng
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
| | - Alex Summerfield
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
| | - Christopher J Mellor
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
| | | | - Laurence Eaves
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
| | - C Thomas Foxon
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
| | - Peter H Beton
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
| | - Sergei V Novikov
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
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Tian H, Khanaki A, Das P, Zheng R, Cui Z, He Y, Shi W, Xu Z, Lake R, Liu J. Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers. NANO LETTERS 2018; 18:3352-3361. [PMID: 29727192 DOI: 10.1021/acs.nanolett.7b05179] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Reliable and controllable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) layers is highly desirable for their applications as 2D dielectric and wide bandgap semiconductors. In this work, we demonstrate that the dissolution of carbon into cobalt (Co) and nickel (Ni) substrates can facilitate the growth of h-BN and attain large-area 2D homogeneity. The morphology of the h-BN film can be controlled from 2D layer-plus-3D islands to homogeneous 2D few-layers by tuning the carbon interstitial concentration in the Co substrate through a carburization process prior to the h-BN growth step. Comprehensive characterizations were performed to evaluate structural, electrical, optical, and dielectric properties of these samples. Single-crystal h-BN flakes with an edge length of ∼600 μm were demonstrated on carburized Ni. An average breakdown electric field of 9 MV/cm was achieved for an as-grown continuous 3-layer h-BN on carburized Co. Density functional theory calculations reveal that the interstitial carbon atoms can increase the adsorption energy of B and N atoms on the Co(111) surface and decrease the diffusion activation energy and, in turn, promote the nucleation and growth of 2D h-BN.
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Affiliation(s)
- Hao Tian
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Alireza Khanaki
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Protik Das
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Renjing Zheng
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Zhenjun Cui
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Yanwei He
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Wenhao Shi
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Zhongguang Xu
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Roger Lake
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
| | - Jianlin Liu
- Department of Electrical and Computer Engineering , University of California , Riverside , California 92521 , United States
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Khanaki A, Tian H, Xu Z, Zheng R, He Y, Cui Z, Yang J, Liu J. Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures. NANOTECHNOLOGY 2018; 29:035602. [PMID: 29165320 DOI: 10.1088/1361-6528/aa9c58] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We carried out a systematic study of hexagonal boron nitride/graphene (h-BN/G) heterostructure growth by introducing high incorporation of a carbon (C) source on a heated cobalt (Co) foil substrate followed by boron and nitrogen sources in a molecular beam epitaxy system. With the increase of C incorporation in Co, three distinct regions of h-BN/G heterostructures were observed from region (1) where the C saturation was not attained at the growth temperature (900 °C) and G was grown only by precipitation during the cooling process to form a 'G network' underneath the h-BN film; to region (2) where the Co substrate was just saturated by C atoms at the growth temperature and a part of G growth occurs isothermally to form G islands and another part by precipitation, resulting in a non-uniform h-BN/G film; and to region (3) where a continuous layered G structure was formed at the growth temperature and precipitated C atoms added additional G layers to the system, leading to a uniform h-BN/G film. It is also found that in all three h-BN/G heterostructure growth regions, a 3 h h-BN growth at 900 °C led to h-BN film with a thickness of 1-2 nm, regardless of the underneath G layers' thickness or morphology. Growth time and growth temperature effects have been also studied.
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20
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Davies A, Albar JD, Summerfield A, Thomas JC, Cheng TS, Korolkov VV, Stapleton E, Wrigley J, Goodey NL, Mellor CJ, Khlobystov AN, Watanabe K, Taniguchi T, Foxon CT, Eaves L, Novikov SV, Beton PH. Lattice-Matched Epitaxial Graphene Grown on Boron Nitride. NANO LETTERS 2018; 18:498-504. [PMID: 29211487 DOI: 10.1021/acs.nanolett.7b04453] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band gap but requires the formation of highly strained material and has not hitherto been realized. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and coexists with a topologically modified moiré pattern with regions of strained graphene which have giant moiré periods up to ∼80 nm. Raman spectra reveal narrow red-shifted peaks due to isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The lattice-matched graphene has a lower conductance than both the Frenkel-Kontorova-type domain walls and also the topological defects where they terminate. We relate these results to theoretical models of band gap formation in graphene/boron nitride heterostructures.
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Affiliation(s)
- Andrew Davies
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
- School of Chemistry, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Juan D Albar
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Alex Summerfield
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - James C Thomas
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Tin S Cheng
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Vladimir V Korolkov
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Emily Stapleton
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - James Wrigley
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Nathan L Goodey
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Christopher J Mellor
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Andrei N Khlobystov
- School of Chemistry, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - C Thomas Foxon
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Laurence Eaves
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Sergei V Novikov
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
| | - Peter H Beton
- School of Physics and Astronomy, University of Nottingham , Nottingham NG7 2RD, United Kingdom
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