Attaining Melt Processing of Complementary Semiconducting Polymer Blends at 130 °C via Side-Chain Engineering

Complementary semiconducting polymer blends (c-SPBs) have been proposed and tested to achieve melt-processed high-performance organic field-effect transistors (OFETs). Prior to this study, melt processing requires temperatures as high as 180 °C. To implement this technique into low-cost and large-area thin-film manufacturing for flexible organic electronics, semiconducting materials meltable at temperatures tolerable by ubiquitous plastic substrates are still needed. We report here the design and melt processing of a c-SPB consisting of a matrix polymer (DPP-C5) and its fully conjugated analogue. By utilizing a siloxane-terminated alkyl chain and a branched alkyl chain as solubilizing groups, the matrix polymer DPP-C5 presents a melting temperature of 115 °C. The resulting c-SPB containing as low as 5% of the fully conjugated polymer could be melt-processed at 130 °C. The obtained OFET devices exhibit hole mobility approaching 1.0 cm²/(V s), threshold voltages below 5 V, and I_ON/I_OFF around 10⁵. This combination of efficient charge-carrier transport and considerably low processing temperatures bode well for melt processing of semiconducting polymer-based organic electronics.

Combined UMC- DFT prediction of electron-hole coupling in unit cells of pentacene crystals

Pentacene is an organic semiconductor that draws special attention from the scientific community due to the high mobility of its charge carriers. As electron-hole interactions are important aspects in the regard of such property, a computationally inexpensive method to predict the coupling between these quasi-particles is highly desired. In this work, we propose a hybrid methodology of combining Uncoupled Monte Carlo Simulations (UMC) and Density functional Theory (DFT) methodologies to obtain a good compromise between computational feasibility and accuracy. As a first step in considering a Pentacene crystal, we describe its unit cell: the Pentacene Dimer. Because many conformations can be encountered for the dimer and considering the complexity of the system, we make use of UMC in order to find the most probable structures and relative orientations for the Pentacene-Pentacene complex. Following, we carry out electronic structure calculations in the scope of DFT with the goal of describing the electron-hole coupling on the most probable configurations obtained by UMC. The comparison of our results with previously reported data on the literature suggests that the methodology is well suited for describing transfer integrals of organic semiconductors. The observed accuracy together with the smaller computational cost required by our approach allows us to conclude that such methodology might be an important tool towards the description of systems with higher complexity.

Melt-Processing of Complementary Semiconducting Polymer Blends for High Performance Organic Transistors

Melt-processing of complementary semiconducting polymer blends provides an average charge carrier mobility of 0.4 cm² V^-1 s^-1 and current on/off ratios higher than 10⁵ , a record performance for melt-processed organic field-effect transistors.

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10^–2 cm²/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm²/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.