Disentangling time in a near-field approach to scanning probe microscopy

Nanoscale Characterization of Graphene Oxide-Based Epoxy Nanocomposite Using Inverted Scanning Microwave Microscopy

Scanning microwave microscopy (SMM) is a novel metrological tool that advances the quantitative, nanometric, high-frequency, electrical characterization of a broad range of materials of technological importance. In this work, we report an inverted near-field scanning microwave microscopy (iSMM) investigation of a graphene oxide-based epoxy nanocomposite material at a nanoscopic level. The high-resolution spatial mapping of local conductance provides a quantitative analysis of the sample's electrical properties. In particular, the electrical conductivity in the order of ∼10-1 S/m as well as the mapping of the dielectric constant with a value of ∼4.7 ± 0.2 are reported and validated by the full-wave electromagnetic modeling of the tip-sample interaction.

Experimental Microwave Complex Conductivity Extraction of Vertically Aligned MWCNT Bundles for Microwave Subwavelength Antenna Design

This paper reports the extraction of electrical impedance at microwave frequencies of vertically aligned multi-wall carbon nanotubes (VA MWCNT) bundles/forests grown on a silicon substrate. Dedicated resonating devices were designed for antenna application, operating around 10 GHz and benefiting from natural inductive/capacitive behavior or complex conductivity in the microwave domain. As obtained from S-parameters measurements, the capacitive and inductive behaviors of VA MWCNT bundles were deduced from device frequency resonance shift.

Blisters on graphite surface: a scanning microwave microscopy investigation

Scanning microwave microscopy (SMM) is based on the interaction between a sample and an electromagnetic evanescent field, in the microwave frequency range. SMM is usually coupled with a scanning probe microscopy (SPM) technique such as in our case, a scanning tunneling microscope (STM). In this way, the STM tip is used to control the distance between the probe and the sample while acting as an antenna for the microwave field. Thanks to the peculiarity of our home-made setup, the SMM is a suitable method to study blisters formed on HOPG surface as consequence of an electrochemical treatment. Our system has a "broad-band" approach that opens the way to perform local microwave spectroscopy over a broad frequency range. Moreover, microwaves have the ability to penetrate into the sample allowing the sub-surface characterization of materials. The application of the SMM to characterize blisters formed on the HOPG surface provides information on the sub-layer structures.

Direct mapping of the electric permittivity of heterogeneous non-planar thin films at gigahertz frequencies by scanning microwave microscopy

We obtained maps of electric permittivity at ∼19 GHz frequencies on non-planar thin film heterogeneous samples by means of combined atomic force-scanning microwave microscopy (AFM-SMM). We show that the electric permittivity maps can be obtained directly from the capacitance images acquired in contact mode, after removing the topographic cross-talk effects. This result demonstrates the possibility of identifying the electric permittivity of different materials in a thin film sample irrespectively of their thickness by just direct imaging and processing. We show, in addition, that quantitative maps of the electric permittivity can be obtained with no need for any theoretical calculation or complex quantification procedures when the electric permittivity of one of the materials is known. To achieve these results the use of contact mode imaging is a key factor. For non-contact imaging modes the effects of local sample thickness and of the imaging distance make the interpretation of the capacitance images in terms of the electric permittivity properties of the materials much more complex. The present results represent a substantial contribution to the field of nanoscale microwave dielectric characterization of thin film materials with important implications for the characterization of novel 3D electronic devices and 3D nanomaterials.

Nondestructive imaging of atomically thin nanostructures buried in silicon

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope-based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~10¹³ P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers.

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are converted into calibrated capacitance and resistance images where no calibration sample is required. The SMM capacitance and resistance values were measured at 18 GHz and ranged from 0 to 100 aF and from 0 to 1 MΩ, respectively. A tip-sample analytical model that includes tip radius, microwave penetration skin depth, and semiconductor depletion layer width has been applied to extract resistivity and doping concentration from the calibrated SMM resistance. The method has been tested on two doped silicon samples and in both cases the resistivity and doping concentration are in quantitative agreement with the data-sheet values over a range of 10(-3)Ω cm to 10(1)Ω cm, and 10(14) atoms per cm(3) to 10(20) atoms per cm(3), respectively. The measured dopant density values, with related uncertainties, are [1.1 ± 0.6] × 10(18) atoms per cm(3), [2.2 ± 0.4] × 10(17) atoms per cm(3), [4.5 ± 0.2] × 10(16) atoms per cm(3), [4.5 ± 1.3] × 10(15) atoms per cm(3), [4.5 ± 1.7] × 10(14) atoms per cm(3). The method does not require sample treatment like cleavage and cross-sectioning, and high contact imaging forces are not necessary, thus it is easily applicable to various semiconductor and materials science investigations.

Infrared imaging in liquid through an extrinsic optical microcavity

The mutual interference of light scattered inside an extrinsic Fabry-Perot microcavity, fed by a low-coherence light, is exploited to achieve infrared imaging in a liquid environment. The transverse field distribution inside a cavity is shaped by the effect of scattered interfering waves in a lens-free system. Reflectivity and contrast phase maps are extracted through the analysis of the cavity response in the time domain. This approach allows to conjugate noninvasivity, subdiffraction imaging, possible quantitative evaluation of dielectric constants and infrared spectroscopy, making it suitable for biological applications.

Near-field microwave scanning probe imaging of conductivity inhomogeneities in CVD graphene

We have performed near-field scanning microwave microscopy (SMM) of graphene grown by chemical vapor deposition. Due to the use of probe-sample capacitive coupling and a relatively high ac frequency of a few GHz, this scanning probe method allows mapping of local conductivity without a dedicated counter electrode, with a spatial resolution of about 50 nm. Here, the coupling was enabled by atomic layer deposition of alumina on top of graphene, which in turn enabled imaging both large-area films, as well as micron-sized islands, with a dynamic range covering a low sheet resistance of a metal film and a high resistance of highly disordered graphene. The structures of graphene grown on Ni films and Cu foils are explored, and the effects of growth conditions are elucidated. We present a simple general scheme for interpretation of the contrast in the SMM images of our graphene samples and other two-dimensional conductors, which is supported by extensive numerical finite-element modeling. We further demonstrate that combination of the SMM and numerical modeling allows quantitative information about the sheet resistance of graphene to be obtained, paving the pathway for characterization of graphene conductivity with a sub-100 nm special resolution.