Electromechanical properties of 1D ZnO nanostructures: nanopiezotronics building blocks, surface and size-scale effects

Atomic force microscopy in mechanical measurements of single nanowires

In this paper, we present the results of mechanical measurement of single nanowires (NWs) in a repeatable manner. Substrates with specifically designed mechanical features were used for NW placement and localization for measurements of properties such as Young's modulus or tensile strength of NW with an atomic force microscopy (AFM) system. Dense arrays of zinc oxide (ZnO) nanowires were obtained by one-step anodic oxidation of metallic Zn foil in a sodium bicarbonate electrolyte and thermal post-treatment. ZnO NWs with a hexagonal wurtzite structure were fixed to the substrates using focused electron beam-induced deposition (FEBID) and were annealed at different temperatures in situ. We show a 10-fold change in the properties of annealed materials as well as a difference in the properties of the NW materials from their bulk values with pre-annealed Young modulus at the level of 20 GPa and annealed reaching 200 GPa. We found the newly developed method to be much more versatile, allowing for in situ operations of NWs, including measurements with different methods of scanning probe microscopy.

Resolving the Puzzle of Charge Carrier Lifetime in ZnO by Revisiting the Role of Oxygen Vacancy

Zinc oxide (ZnO) is a wide bandgap prototypical n-type semiconductor due to the presence of intrinsic oxygen vacancies (VO). The VO can readily transfer to the most energetically favorable +2 charged VO (VO2+) by losing two electrons mediated by the metastable VO1+ defect. Nevertheless, the influence of charged VO on the charge dynamics in ZnO and the underlying mechanisms remain elusive. By performing nonadiabatic molecular dynamics simulations of the charge trapping and recombination processes, we show that both VO1+ and VO2+ slow down the nonradiative electron-hole recombination via assisted defect states and, thus, extending charge carrier lifetime compared to pristine ZnO. Our study contributes to identifying the different recombination pathways that take place in VO1+ and VO2+ of n-type ZnO systems, providing useful guidance for designing high-performance ZnO-based devices.

A cutoff-based method with charge-distribution-data driven pair potentials for efficiently estimating electrostatic interactions in molecular systems

We introduce a simple cutoff-based method for precise electrostatic energy calculations in the molecular dynamics (MD) simulations of point-particle systems. Our method employs a theoretically derived smooth pair potential function to define electrostatic energy, offering stability and computational efficiency in MD simulations. Instead of imposing specific physical conditions, such as dielectric environments or charge neutrality, we focus on the relationship represented by a single summation formula of charge-weighted pair potentials. This approach allows an accurate energy approximation for each particle, enabling a straightforward error analysis. The resulting particle-dependent pair potential captures the charge distribution information, making it suitable for heterogeneous systems and ensuring an enhanced accuracy through distant information inclusion. Numerical investigations of the Madelung constants of crystalline systems validate the method's accuracy.

State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots

The main intent of this paper is to present an exhaustive description of the most relevant mathematical models for the electromechanical properties of heterostructure quantum dots. Models are applied both to wurtzite and zincblende quantum dot due to the relevance they have shown for optoelectronic applications. In addition to a complete overview of the continuous and atomistic models for the electromechanical fields, analytical results will be presented for some relevant approximations, some of which are unpublished, such as models in cylindrical approximation or a cubic approximation for the transformation of a zincblende parametrization to a wurtzite one and vice versa. All analytical models will be supported by a wide range of numerical results, most of which are also compared with experimental measurements.

A Modified Embedded-Atom Method Potential for a Quaternary Fe-Cr-Si-Mo Solid Solution Alloy

Ferritic-martensitic steels, such as T91, are candidate materials for high-temperature applications, including superheaters, heat exchangers, and advanced nuclear reactors. Considering these alloys' wide applications, an atomistic understanding of the underlying mechanisms responsible for their excellent mechano-chemical properties is crucial. Here, we developed a modified embedded-atom method (MEAM) potential for the Fe-Cr-Si-Mo quaternary alloy system-i.e., four major elements of T91-using a multi-objective optimization approach to fit thermomechanical properties reported using density functional theory (DFT) calculations and experimental measurements. Elastic constants calculated using the proposed potential for binary interactions agreed well with ab initio calculations. Furthermore, the computed thermal expansion and self-diffusion coefficients employing this potential are in good agreement with other studies. This potential will offer insightful atomistic knowledge to design alloys for use in harsh environments.

Non-Ewald methods for evaluating the electrostatic interactions of charge systems: similarity and difference

In molecular simulations, it is essential to properly calculate the electrostatic interactions of particles in the physical system of interest. Here we consider a method called the non-Ewald method, which does not rely on the standard Ewald method with periodic boundary conditions, but instead relies on the cutoff-based techniques. We focus on the physicochemical and mathematical conceptual aspects of the method in order to gain a deeper understanding of the simulation methodology. In particular, we take into account the reaction field (RF) method, the isotropic periodic sum (IPS) method, and the zero-multipole summation method (ZMM). These cutoff-based methods are based on different physical ideas and are completely distinguishable in their underlying concepts. The RF and IPS methods are "additive" methods that incorporate information outside the cutoff region, via dielectric medium and isotropic boundary condition, respectively. In contrast, the ZMM is a "subtraction" method that tries to remove the artificial effects, generated near the boundary, from the cutoff sphere. Nonetheless, we find physical and/or mathematical similarities between these methods. In particular, the modified RF method can be derived by the principle of neutralization utilized in the ZMM, and we also found a direct relationship between IPS and ZMM.

Tailoring ZnO nanowire crystallinity and morphology for label-free capturing of extracellular vesicles

Zinc oxide (ZnO) nanowires have shown their potential in isolation of cancer-related biomolecules such as extracellular vesicles (EVs), RNAs, and DNAs for early diagnosis and therapeutic development of diseases. Since the function of inorganic nanowires changes depending on their morphology, previous studies have established strategies to control the morphology and have demonstrated attainment of improved properties for gas and organic compound detection, and for dye-sensitized solar cells and photoelectric conversion performance. Nevertheless, crystallinity and morphology of ZnO nanowires for capturing EVs, an important biomarker of cancer, have not yet been discussed. Here, we fabricated ZnO nanowires with different crystallinities and morphologies using an ammonia-assisted hydrothermal method, and we comprehensively analyzed the crystalline nature and oriented growth of the synthesized nanowires by X-ray diffraction and selected area electron diffraction using high resolution transmission electron microscopy. In evaluating the performance of label-free EV capture in a microfluidic device platform, we found both the crystallinity and morphology of ZnO nanowires affected EV capture efficiency. In particular, the zinc blende phase was identified as important for crystallinity, while increasing the nanowire density in the array was important for morphology to improve EV capture performance. These results highlighted that the key physicochemical properties of the ZnO nanowires were related to the EV capture performance.

Effects of Co Doping on the Growth and Photocatalytic Properties of ZnO Particles

The present work reports on the synthesis of ZnO photocatalysts with different Co-doping levels via a facile one-step solution route. The structural and optical properties were characterized by powder X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and UV-Vis diffuse reflectance spectra. The morphology of Co-doped ZnO depends on the reaction temperature and the amount of Co and counter-ions in the solution. Changes with the c-axis lattice constant and room temperature redshift show the replacement of Zn with Co ions without changing the wurtzite structure. Photocatalytic activities of Co-doped ZnO on the evolution of H₂ and the degradation of methylene blue (MB) reduce with the doping of Co ions. As the close ionic radii of Co and Zn, the reducing photocatalytic activity is not due to the physical defects but the formation of deep bandgap energy levels. Photocurrent response experiments further prove the formation of the recombination centers. Mechanistic insights into Co-ZnO formation and performance regulation are essential for their structural adaptation for application in catalysis, energy storage, etc.

Piezo-phototronic effect on photocatalysis, solar cells, photodetectors and light-emitting diodes

The piezo-phototronic effect (a coupling effect of piezoelectric, photoexcitation and semiconducting properties, coined in 2010) has been demonstrated to be an ingenious and robust strategy to manipulate optoelectronic processes by tuning the energy band structure and photoinduced carrier behavior. The piezo-phototronic effect exhibits great potential in improving the quantum yield efficiencies of optoelectronic materials and devices and thus could help increase the energy conversion efficiency, thus alleviating the energy shortage crisis. In this review, the fundamental principles and challenges of representative optoelectronic materials and devices are presented, including photocatalysts (converting solar energy into chemical energy), solar cells (generating electricity directly under light illumination), photodetectors (converting light into electrical signals) and light-emitting diodes (LEDs, converting electric current into emitted light signals). Importantly, the mechanisms of how the piezo-phototronic effect controls the optoelectronic processes and the recent progress and applications in the above-mentioned materials and devices are highlighted and summarized. Only photocatalysts, solar cells, photodetectors, and LEDs that display piezo-phototronic behavior are reviewed. Material and structural design, property characterization, theoretical simulation calculations, and mechanism analysis are then examined as strategies to further enhance the quantum yield efficiency of optoelectronic devices via the piezo-phototronic effect. This comprehensive overview will guide future fundamental and applied studies that capitalize on the piezo-phototronic effect for energy conversion and storage.

Defect Engineering: A Path toward Exceeding Perfection

Moving to nanoscale is a path to get perfect materials with superior properties. Yet defects, such as stacking faults (SFs), are still forming during the synthesis of nanomaterials and, according to common notion, degrade the properties. Here, we demonstrate the possibility of engineering defects to, surprisingly, achieve mechanical properties beyond those of the corresponding perfect structures. We show that introducing SFs with high density increases the Young's Modulus and the critical stress under compressive loading of the nanowires above those of a perfect structure. The physics can be explained by the increase in intrinsic strain due to the presence of SFs and overlapping of the corresponding strain fields. We have used the molecular dynamics technique and considered ZnO as our model material due to its technological importance for a wide range of electromechanical applications. The results are consistent with recent experiments and propose a novel approach for the fabrication of stronger materials.

Modified Continuum Mechanics Modeling on Size-Dependent Properties of Piezoelectric Nanomaterials: A Review

Piezoelectric nanomaterials (PNs) are attractive for applications including sensing, actuating, energy harvesting, among others in nano-electro-mechanical-systems (NEMS) because of their excellent electromechanical coupling, mechanical and physical properties. However, the properties of PNs do not coincide with their bulk counterparts and depend on the particular size. A large amount of efforts have been devoted to studying the size-dependent properties of PNs by using experimental characterization, atomistic simulation and continuum mechanics modeling with the consideration of the scale features of the nanomaterials. This paper reviews the recent progresses and achievements in the research on the continuum mechanics modeling of the size-dependent mechanical and physical properties of PNs. We start from the fundamentals of the modified continuum mechanics models for PNs, including the theories of surface piezoelectricity, flexoelectricity and non-local piezoelectricity, with the introduction of the modified piezoelectric beam and plate models particularly for nanostructured piezoelectric materials with certain configurations. Then, we give a review on the investigation of the size-dependent properties of PNs by using the modified continuum mechanics models, such as the electromechanical coupling, bending, vibration, buckling, wave propagation and dynamic characteristics. Finally, analytical modeling and analysis of nanoscale actuators and energy harvesters based on piezoelectric nanostructures are presented.

Atomic Defects Influenced Mechanics of II-VI Nanocrystals

Mechanical properties of nanocrystals are influenced by atomic defects. Here, we demonstrate the effect of planar defects on the mechanics of ZnO nanorods using atomic force microscopy, high-resolution transmission electron microscopy, and large-scale atomistic simulation. We study two different conditionally grown single nanorods. One contains extended I₁-type stacking fault (SF) and another is defect free. The SF containing nanorods show buckling behaviors with reduced critical loading, whereas the other kinds show linear elastic behavior. We also studied the size dependence of elastic modulus and yield strength. The elastic modulus in both nanorods is inversely proportional to their size. Similar trend is observed for yield strength in the SF containing nanorods; however, the opposite is observed in the SF-free nanorods. This first experimental and theoretical study will guide toward the development of reliable electromechanical devices.

Structural transformation in monolayer materials: a 2D to 1D transformation

The excess energy of surface atoms along with the surface stresses can be the source of structural instabilities in low dimensional materials, which here we revealed the 2D to 1D transformation.

Mechanochemical stability of sub-nm ZnO chains

Formation of monoatomic chains by axial stretching of zinc oxide nanowires is investigated using molecular dynamics and supported by density functional calculations.

Mechanical stability of zinc oxide nanowires under tensile loading: is wurtzite stable at the nanoscale?

New theoretical evidence suggests that ZnO wurtzite nanowires transform to a body-centered-tetragonal structure under tensile loading at 600 K.

Extreme strain rate and temperature dependence of the mechanical properties of nano silicon nitride thin layers in a basal plane under tension: a molecular dynamics study

Molecular dynamics simulations are performed to clarify the extreme strain rate and temperature dependence of the mechanical behaviors of nano silicon nitride thin layers in a basal plane under tension. It is found that fracture stresses show almost no change with increasing strain rate. However, fracture strains decrease gradually due to the appearance of additional N(2c)-Si bond breaking defects in the deformation process. With increasing loading temperature, there is a noticeable drop in fracture stress and fracture strain. In the low temperature range, roughness phases can be observed owing to a combination of factors such as configuration evolution and energy change.