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Roberts DM, Kim H, McClure EL, Lu K, Mangum JS, Braun AK, Ptak AJ, Schulte KL, Kim J, Simon J. Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy. ACS OMEGA 2023; 8:45088-45095. [PMID: 38046304 PMCID: PMC10688164 DOI: 10.1021/acsomega.3c07162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/02/2023] [Accepted: 11/07/2023] [Indexed: 12/05/2023]
Abstract
We couple halide vapor phase epitaxy (HVPE) growth of III-V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III-V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by HVPE on a thin amorphous carbon layer that can be mechanically exfoliated, leaving the substrate available for reuse. We study nucleation as a function of carbon layer thickness and growth rate and find island-like nucleation. We then study various GaAs growth conditions, including V/III ratio, growth temperature, and growth rate in an effort to minimize film roughness. High growth rates and thicker films lead to drastically smoother surfaces with reduced threading dislocation density. Finally, we grow an initial photovoltaic device on a carbon release layer that has an efficiency of 7.2%. The findings of this work show that HVPE growth is compatible with a carbon release layer and presents a path toward lowering the cost of photovoltaics with high throughput growth and substrate reuse.
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Affiliation(s)
- Dennice M. Roberts
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Hyunseok Kim
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | | | - Kuangye Lu
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - John S. Mangum
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Anna K. Braun
- Colorado
School of Mines, Golden, Colorado 80401, United
States
| | - Aaron J. Ptak
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Kevin L. Schulte
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Jeehwan Kim
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - John Simon
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
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2
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Rout DR, Jena HM, Baigenzhenov O, Hosseini-Bandegharaei A. Graphene-based materials for effective adsorption of organic and inorganic pollutants: A critical and comprehensive review. THE SCIENCE OF THE TOTAL ENVIRONMENT 2023; 863:160871. [PMID: 36521616 DOI: 10.1016/j.scitotenv.2022.160871] [Citation(s) in RCA: 23] [Impact Index Per Article: 23.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Revised: 12/06/2022] [Accepted: 12/08/2022] [Indexed: 06/17/2023]
Abstract
Water scarcity has been felt in many countries and will become a critical issue in the coming years. The release of toxic organic and inorganic contaminants from different anthropogenic activities, like mining, agriculture, industries, and domestic households, enters the natural waterbody and pollutes them. Keeping this in view in combating the environmental crises, removing pollutants from wastewater is one of the ongoing environmental challenges. Adsorption technology is an economical, fast, and efficient physicochemical method for removing both organic and inorganic pollutants, even at low concentrations. In the last decade, graphene and its composite materials have become the center of attraction for numerous applications, including wastewater treatment, due to the large surface area, highly active surface, and exclusive physicochemical properties, which make them potential adsorbents with unique physicochemical properties, like low density, chemical strength, structural variability, and the possibility of large-scale fabrications. This review article provides a thorough summary/critical appraisal of the published literature on graphene-, GO-, and rGO-based adsorbents for the removal of organic and inorganic pollutants from wastewater. The synthesis methods, experimental parameters, adsorption behaviors, isotherms, kinetics, thermodynamics, mechanisms, and the performance of the regeneration-desorption processes of these substances are scrutinized. Finally, the research challenges, limitations, and future research studies are also discussed. Certainly, this review article will benefit the research community by getting substantial information on suitable techniques for synthesizing such adsorbents and utilizing them in water treatment and designing water treatment systems.
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Affiliation(s)
- Dibya Ranjan Rout
- Department of Chemical Engineering, National Institute of Technology, Rourkela 769008, Orissa, India.
| | - Hara Mohan Jena
- Department of Chemical Engineering, National Institute of Technology, Rourkela 769008, Orissa, India.
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3
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Sun H, Kong X, Park H, Liu F, Lee Z, Ding F. Spiral Growth of Adlayer Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107587. [PMID: 35048426 DOI: 10.1002/adma.202107587] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Revised: 12/22/2021] [Indexed: 06/14/2023]
Abstract
The morphology of as-grown graphene in chemical vapor deposition (CVD) experiments is sensitive to the reaction environment. Understanding the mechanism of formation of different graphene morphologies is essential to achieve controlled graphene CVD growth. Here the growth and formation mechanism of adlayer graphene spirals are reported. An adlayer graphene spiral is formed by fast propagation of the tips of spiral arms along the edge of the first graphene layer. The driving force to form spirals is the limited availability of carbon diffusing from the Cu surface through the edge of the first graphene layer. In addition, it is found that graphene onions are formed by overlapping graphene spirals with clockwise and anticlockwise arms. Based on these features, a kinetic Monte Carlo (kMC) method is demonstrated using which all the observed graphene spiral structures are successfully reproduced at the atomic level. This study thus unravels the hither-to unresolved mechanism of graphene onion growth and paves the way to the controllable growth of few-layer graphene by increasing the carbon supply at the edge of the first layer graphene.
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Affiliation(s)
- Haibin Sun
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- Key Laboratory of Microelectronics and Energy of Henan Province, College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, 464000, P. R. China
| | - Xiao Kong
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
| | - Hyoju Park
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
| | - Fengning Liu
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan, 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea
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Seravalli L, Bosi M. A Review on Chemical Vapour Deposition of Two-Dimensional MoS 2 Flakes. MATERIALS (BASEL, SWITZERLAND) 2021; 14:7590. [PMID: 34947186 PMCID: PMC8704647 DOI: 10.3390/ma14247590] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 12/02/2021] [Accepted: 12/07/2021] [Indexed: 12/13/2022]
Abstract
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and boron nitride have recently emerged as promising candidates for novel applications in sensing and for new electronic and photonic devices. Their exceptional mechanical, electronic, optical, and transport properties show peculiar differences from those of their bulk counterparts and may allow for future radical innovation breakthroughs in different applications. Control and reproducibility of synthesis are two essential, key factors required to drive the development of 2D materials, because their industrial application is directly linked to the development of a high-throughput and reliable technique to obtain 2D layers of different materials on large area substrates. Among various methods, chemical vapour deposition is considered an excellent candidate for this goal thanks to its simplicity, widespread use, and compatibility with other processes used to deposit other semiconductors. In this review, we explore the chemical vapour deposition of MoS2, considered one of the most promising and successful transition metal dichalcogenides. We summarize the basics of the synthesis procedure, discussing in depth: (i) the different substrates used for its deposition, (ii) precursors (solid, liquid, gaseous) available, and (iii) different types of promoters that favour the growth of two-dimensional layers. We also present a comprehensive analysis of the status of the research on the growth mechanisms of the flakes.
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Affiliation(s)
- Luca Seravalli
- IMEM-CNR, Parco Area delle Scienze 37A, 43124 Parma, Italy
| | - Matteo Bosi
- IMEM-CNR, Parco Area delle Scienze 37A, 43124 Parma, Italy
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Jain M, Khan SA, Pandey A, Pant KK, Ziora ZM, Blaskovich MAT. Instructive analysis of engineered carbon materials for potential application in water and wastewater treatment. THE SCIENCE OF THE TOTAL ENVIRONMENT 2021; 793:148583. [PMID: 34328999 DOI: 10.1016/j.scitotenv.2021.148583] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Revised: 06/02/2021] [Accepted: 06/17/2021] [Indexed: 06/13/2023]
Abstract
Water remediation is an essential component for sustainable development. Increasing population and rapid industrialization have contributed to the deterioration of water resources. In particular, effluents from chemical, pharmaceutical, petroleum industries, and anthropogenic activities have led to severe ecological degradation. Many of these detrimental pollutants are highly toxic even at low concentrations, acting as carcinogens and inflicting severe long-lasting effects on human health. This review underscores the potential applications of engineered carbon-based materials for effective wastewater treatment. It focuses on the performance as well as efficiency of activated carbon, graphene nanomaterial, and carbon nanotubes, both with and without chemical functionalization. Plausible mechanisms of action between the chemically functionalized adsorbent and pollutants are also discussed. Based on the keywords from the literature published in the recent five years, a statistical practicality-vs-applicability analysis of these three materials is also provided. The review will provide a deep understanding of the physical or chemical interactions of the wastewater pollutants with carbon materials.
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Affiliation(s)
- Marut Jain
- The University of Queensland - Indian Institute of Technology Delhi Academy of Research (UQIDAR), India
| | - Sadaf Aiman Khan
- The University of Queensland - Indian Institute of Technology Delhi Academy of Research (UQIDAR), India
| | - Ashish Pandey
- Department of Chemical Engineering, Indian Institute of Technology Delhi, India
| | - Kamal Kishore Pant
- Department of Chemical Engineering, Indian Institute of Technology Delhi, India.
| | - Zyta Maria Ziora
- Centre for Superbug Solutions, Institute for Molecular Bioscience, The University of Queensland, St Lucia, QLD 4072, Australia
| | - Mark A T Blaskovich
- Centre for Superbug Solutions, Institute for Molecular Bioscience, The University of Queensland, St Lucia, QLD 4072, Australia
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6
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Cai L, He W, Xue X, Huang J, Zhou K, Zhou X, Xu Z, Yu G. In situ growth of large-area and self-aligned graphene nanoribbon arrays on liquid metal. Natl Sci Rev 2020; 8:nwaa298. [PMID: 34987835 PMCID: PMC8692927 DOI: 10.1093/nsr/nwaa298] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Revised: 11/21/2020] [Accepted: 12/08/2020] [Indexed: 11/14/2022] Open
Abstract
Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices, whereas graphene nanoribbons (GNRs) are promising semiconductors because of their bandgap-opening feature. However, the controllable mass-fabrication of high-quality GNR arrays remains a major challenge. In particular, the in situ growth of GNR arrays through template-free chemical vapor deposition (CVD) has not been realized. Herein, we report a template-free CVD strategy to grow large-area, high-quality and self-aligned GNR arrays on liquid copper surface. The width of as-grown GNR could be optimized to sub-10 nm with aspect ratio up to 387, which is higher than those of reported CVD-GNRs. The study of the growth mechanism indicates that a unique comb-like etching-regulated growth process caused by a trace hydrogen flow guides the formation of the mass-produced self-aligned GNR arrays. Our approach is operationally simple and efficient, offering an assurance for the use of GNR arrays in integrated circuits.
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Affiliation(s)
- Le Cai
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Wanzhen He
- Applied Mechanics Laboratory, Department of Engineering Mechanics and Centre for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
| | - Xudong Xue
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianyao Huang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Ke Zhou
- Applied Mechanics Laboratory, Department of Engineering Mechanics and Centre for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
| | - Xiahong Zhou
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhiping Xu
- Applied Mechanics Laboratory, Department of Engineering Mechanics and Centre for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Centre for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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7
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Recent advancements in graphene adsorbents for wastewater treatment: Current status and challenges. CHINESE CHEM LETT 2020. [DOI: 10.1016/j.cclet.2020.05.011] [Citation(s) in RCA: 56] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
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Saeed M, Alshammari Y, Majeed SA, Al-Nasrallah E. Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review. Molecules 2020; 25:E3856. [PMID: 32854226 PMCID: PMC7503287 DOI: 10.3390/molecules25173856] [Citation(s) in RCA: 58] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2020] [Revised: 08/17/2020] [Accepted: 08/18/2020] [Indexed: 12/11/2022] Open
Abstract
Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.
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Affiliation(s)
- Maryam Saeed
- Energy and Building Research Centre, Kuwait Institute for Scientific Research, P.O. Box 24885, Safat 13109, Kuwait;
| | - Yousef Alshammari
- Waikato Centre for Advanced Materials, School of Engineering, The University of Waikato, Hamilton 3240, New Zealand;
| | - Shereen A. Majeed
- Department of Chemistry, Kuwait University, P.O. Box 5969, Safat 13060, Kuwait;
| | - Eissa Al-Nasrallah
- Energy and Building Research Centre, Kuwait Institute for Scientific Research, P.O. Box 24885, Safat 13109, Kuwait;
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9
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Mansourkhani F, Badiei A, Rashidi AM, Khajehmandali S. Value-added utilization of pyrolysis heavy distillate for the synthesis of nitrogen doped graphene with chemical vapor deposition. FULLERENES, NANOTUBES AND CARBON NANOSTRUCTURES 2019; 27:525-530. [DOI: 10.1080/1536383x.2019.1594198] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2019] [Revised: 03/06/2019] [Accepted: 03/10/2019] [Indexed: 06/19/2023]
Affiliation(s)
| | - Alireza Badiei
- Department of Chemistry College of Science, University of Tehran, Tehran, Iran
| | - Ali Morad Rashidi
- Nanotechnology Research Center Research Institute of Petroleum Industry, Tehran, Iran
| | - Saeid Khajehmandali
- Research and Development Department, Shazand Petrochemical Company, Arak, Iran
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10
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Zhou L, Wei S, Ge C, Zhao C, Guo B, Zhang J, Zhao J. Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates. NANOMATERIALS 2019; 9:nano9070964. [PMID: 31266221 PMCID: PMC6669584 DOI: 10.3390/nano9070964] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/23/2019] [Revised: 06/26/2019] [Accepted: 06/28/2019] [Indexed: 01/29/2023]
Abstract
To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO2/Si) substrate using methanol as the only carbon source. A 1 × 1 cm2 SiO2/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9–1.2 kΩ/sq and a hole mobility of up to 115.4 cm2/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications.
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Affiliation(s)
- Lijie Zhou
- School of Mechanical and Power Engineering, Harbin University of Science and Technology, No. 52, Xuefu Road, Harbin 150080, China
| | - Shuai Wei
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
| | - Chuanyang Ge
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
| | - Chao Zhao
- College of Engineering, Swansea University, Fabian Way, Swansea SA1 8EN, UK
| | - Bin Guo
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
| | - Jia Zhang
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China.
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China.
| | - Jie Zhao
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
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Ali I, Basheer AA, Mbianda XY, Burakov A, Galunin E, Burakova I, Mkrtchyan E, Tkachev A, Grachev V. Graphene based adsorbents for remediation of noxious pollutants from wastewater. ENVIRONMENT INTERNATIONAL 2019; 127:160-180. [PMID: 30921668 DOI: 10.1016/j.envint.2019.03.029] [Citation(s) in RCA: 182] [Impact Index Per Article: 36.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2019] [Revised: 03/11/2019] [Accepted: 03/12/2019] [Indexed: 05/18/2023]
Abstract
The contamination of water resources with noxious pollutants is a serious issue. Many aquatic systems are contaminated with different toxic inorganic and organic species; coming to wastewater from various anthropogenic sources such as industries, agriculture, mining, and domestic households. Keeping in view of this, wastewater treatment appears to the main environmental challenge. Adsorption is one of the most efficient techniques for removing all most all types of pollutants i.e. inorganics and organics. Nowadays, graphene and its composite materials are gaining importance as nano adsorbents. Graphene; a two-dimensional nanomaterial having single-atom graphite layer; has attracted a great interest in many application areas (including wastewater treatment) due to its unique physico-chemical properties. The present paper is focused on the remediation of noxious wastes from wastewater using graphene based materials as adsorbents, and it contains all the details on materials - i.e., from their synthesis to application in the field of wastewater treatment (removal of hazardous contaminants of different chemical nature - heavy and rare-earth metal ions, and organic compounds - from wastewater effluents. The efficiency of the adsorption and desorption of these substances is considered. Certainly, this article will be useful for nano environmentalist to design future experiments for water treatment.
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Affiliation(s)
- Imran Ali
- Department of Chemistry, College of Sciences, Taibah University, Al-Medina Al-Munawara 41477, Saudi Arabia; Department of Chemistry, Jamia Millia Islamia (Central University), New Delhi 110025, India.
| | - Al Arsh Basheer
- State University of New York, Flint Entrance, Amherst, NY 14260, Buffalo, USA.
| | - X Y Mbianda
- Department of Applied Chemistry, University of Johannesburg, Johannesburg 17011, South Africa
| | - Alexander Burakov
- Tambov State Technical University, 106 Sovetskaya Str., Tambov 392000, Russia
| | - Evgeny Galunin
- Tambov State Technical University, 106 Sovetskaya Str., Tambov 392000, Russia
| | - Irina Burakova
- Tambov State Technical University, 106 Sovetskaya Str., Tambov 392000, Russia
| | - Elina Mkrtchyan
- Tambov State Technical University, 106 Sovetskaya Str., Tambov 392000, Russia
| | - Alexey Tkachev
- Tambov State Technical University, 106 Sovetskaya Str., Tambov 392000, Russia
| | - Vladimir Grachev
- A.N. Frumkin Instutute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences, 31 Leninsky Ave., Bldg. 4, Moscow 119071, Russia
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12
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Dong J, Zhang L, Ding F. Kinetics of Graphene and 2D Materials Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1801583. [PMID: 30318816 DOI: 10.1002/adma.201801583] [Citation(s) in RCA: 45] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2018] [Revised: 07/06/2018] [Indexed: 06/08/2023]
Abstract
During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.
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Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Leining Zhang
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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13
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Meng Y, Yin H, Liu M, Ma T, Jiang S. Experimental study on the generation of carbonaceous dust formed by chemical vapor deposition in HTGR. NUCLEAR ENGINEERING AND DESIGN 2018. [DOI: 10.1016/j.nucengdes.2018.05.020] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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14
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Gebeyehu ZM, Arrighi A, Costache MV, Sotomayor-Torres CM, Esplandiu MJ, Valenzuela SO. Impact of the in situ rise in hydrogen partial pressure on graphene shape evolution during CVD growth of graphene. RSC Adv 2018; 8:8234-8239. [PMID: 29552339 PMCID: PMC5830861 DOI: 10.1039/c7ra13169k] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2017] [Accepted: 02/07/2018] [Indexed: 11/21/2022] Open
Abstract
Exposing graphene to a hydrogen post-etching process yields dendritic graphene shapes. Here, we demonstrate that similar dendritic structures can be achieved at long growth times without adding hydrogen externally. These shapes are not a result of a surface diffusion controlled growth but of the competing backward reaction (etching), which dominates the growth dynamics at long times due to an in situ rise in the hydrogen partial pressure. We have performed a systematic study on the growth of graphene as a function of time to identify the onset and gradual evolution of graphene shapes caused by etching and then demonstrated that the etching can be stopped by reducing the flow of hydrogen from the feed. In addition, we have found that the etching rate due to the in situ rise in hydrogen is strongly dependent on the confinement (geometrical confinement) of copper foil. Highly etched graphene with dendritic shapes was observed in unconfined copper foil regions while no etching was found in graphene grown in a confined reaction region. This highlights the effect of the dynamic reactant distribution in activating the in situ etching process during growth, which needs to be counteracted or controlled for large scale growth. Growth to etching transformation following in situ rise in hydrogen with time results in dendritic graphene.![]()
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Affiliation(s)
- Zewdu M Gebeyehu
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain. ; .,Universitat Autònoma de Barcelona (UAB), Bellaterra, E-08193, Spain
| | - Aloïs Arrighi
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain. ; .,Universitat Autònoma de Barcelona (UAB), Bellaterra, E-08193, Spain
| | - Marius V Costache
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain. ;
| | - Clivia M Sotomayor-Torres
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain. ; .,Institució Catalana de Recerca i Estudis Avançats (ICREA), 0870 Barcelona, Spain.
| | - Maria J Esplandiu
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain. ; .,Universitat Autònoma de Barcelona (UAB), Bellaterra, E-08193, Spain
| | - Sergio O Valenzuela
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, The Barcelona Institute of Science and Technology (BIST), Campus UAB, Bellaterra, 08193 Barcelona, Spain. ; .,Institució Catalana de Recerca i Estudis Avançats (ICREA), 0870 Barcelona, Spain.
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15
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Liang T, Luan C, Chen H, Xu M. Exploring oxygen in graphene chemical vapor deposition synthesis. NANOSCALE 2017; 9:3719-3735. [PMID: 28267184 DOI: 10.1039/c7nr00188f] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Graphene's practical applications require its reproducible production with controlled means. In particular, graphene synthesis by chemical vapor deposition on metals has been shown to be a promising way to produce large-size and high-quality graphene film at low cost. Understanding the reaction mechanisms during the synthesis process is vital for process and product controllability. There have been a great deal of studies regarding the mutual interplays between the metal, graphene, and hydrogen in graphene production, leading to significant advances in controllable graphene synthesis. Recently, oxygen has been found to play a key role in each step of graphene synthesis, especially on Cu. Taking oxygen into consideration, one can explain the divergent experimental results under similar conditions reported before and can grasp it as another powerful tool that can help to regulate the synthesis processes. The primary discoveries of the function of oxygen in graphene synthesis are summarized and discussed herein, divided into four aspects, corresponding to the elementary steps in graphene synthesis. Oxygen may also further promote graphene synthesis toward the final goal of developing wafer-scale single crystals with definite layer numbers and defects.
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Affiliation(s)
- Tao Liang
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China. and Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Chunyan Luan
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China.
| | - Hongzheng Chen
- Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Mingsheng Xu
- College of Information Science & Electronic Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China.
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16
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Yu X, Dong Z, Liu Y, Liu T, Tao J, Zeng Y, Yang JKW, Wang QJ. A high performance, visible to mid-infrared photodetector based on graphene nanoribbons passivated with HfO2. NANOSCALE 2016; 8:327-32. [PMID: 26610363 DOI: 10.1039/c5nr06869j] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Graphene has drawn tremendous attention as a promising candidate for electronic and optoelectronic applications owing to its extraordinary properties, such as broadband absorption and ultrahigh mobility. Nevertheless, the absence of a bandgap makes graphene unfavorable for digital electronic or photonic applications. Although patterning graphene into nanostructures with the quantum confinement effect is able to open a bandgap, devices based on these graphene nanostructures generally suffer from low carrier mobility and scattering losses. In this paper, we demonstrated that encapsulation of an atomic layer deposited high-quality HfO2 film will greatly enhance the carrier mobility and decrease the scattering losses of graphene nanoribbons, because this high-k dielectric layer weakens carrier coulombic interactions. In addition, a photodetector based on HfO2 layer capped graphene nanoribbons can cover broadband wavelengths from visible to mid-infrared at room temperature, exhibiting ∼10 times higher responsivity than the one without a HfO2 layer in the visible regime and ∼8 times higher responsivity in the mid-infrared regime. The method employed here could be potentially used as a general approach to improve the performance of graphene nanostructures for electronic and optoelectronic applications.
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Affiliation(s)
- Xuechao Yu
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Zhaogang Dong
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, 138634, Singapore
| | - Yanping Liu
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Tao Liu
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Jin Tao
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Yongquan Zeng
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Joel K W Yang
- Singapore University of Technology and Design, 8 Somapah Road, 487372, Singapore and Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, 138634, Singapore
| | - Qi Jie Wang
- Centre for OptoElectronics and Biophotonics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore and Centre for Disruptive Photonics Technologies, Nanyang Technological University, 21 Nanyang Link, 637371, Singapore.
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17
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Geng D, Wang H, Wan Y, Xu Z, Luo B, Xu J, Yu G. Direct Top-Down Fabrication of Large-Area Graphene Arrays by an In Situ Etching Method. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:4195-4199. [PMID: 26095295 DOI: 10.1002/adma.201501524] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2015] [Revised: 05/02/2015] [Indexed: 06/04/2023]
Affiliation(s)
- Dechao Geng
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China
- University of Chinese Academy of Sciences, Beijing, 10049, PR China
| | - Huaping Wang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China
- University of Chinese Academy of Sciences, Beijing, 10049, PR China
| | - Yu Wan
- Applied Mechanics Laboratory, Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing, 100084, PR China
| | - Zhiping Xu
- Applied Mechanics Laboratory, Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing, 100084, PR China
| | - Birong Luo
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China
| | - Jie Xu
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China
- University of Chinese Academy of Sciences, Beijing, 10049, PR China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China
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18
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Li X, Li X, Zang X, Zhu M, He Y, Wang K, Xie D, Zhu H. Role of hydrogen in the chemical vapor deposition growth of MoS2 atomic layers. NANOSCALE 2015; 7:8398-8404. [PMID: 25876755 DOI: 10.1039/c5nr00904a] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Hydrogen plays a crucial role in the chemical vapor deposition (CVD) growth of graphene. Here, we have revealed the roles of hydrogen in the two-step CVD growth of MoS2. Our study demonstrates that hydrogen acts as the following: (i) an inhibitor of the thermal-induced etching effect in the continuous film growth process; and (ii) a promoter of the desulfurization reaction by decreasing the S/Mo atomic ratio and the oxidation reaction of the obtained MoSx (0 < x < 2) films. A high hydrogen content of more than 100% in argon forms nano-sized circle-like defects and damages the continuity and uniformity of the film. Continuous MoS2 films with a high crystallinity and a nearly perfect S/Mo atomic ratio were finally obtained after sulfurization annealing with a hydrogen content in the range of 20%-80%. This insightful understanding reveals the crucial roles of hydrogen in the CVD growth of MoS2 and paves the way for the controllable synthesis of two-dimensional materials.
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Affiliation(s)
- Xiao Li
- School of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
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19
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Geng D, Wang H, Yu G. Graphene single crystals: size and morphology engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:2821-2837. [PMID: 25809643 DOI: 10.1002/adma.201405887] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2014] [Revised: 02/05/2015] [Indexed: 06/04/2023]
Abstract
Recently developed chemical vapor deposition (CVD) is considered as an effective way to large-area and high-quality graphene preparation due to its ultra-low cost, high controllability, and high scalability. However, CVD-grown graphene film is polycrystalline, and composed of numerous grains separated by grain boundaries, which are detrimental to graphene-based electronics. Intensive investigations have been inspired on the controlled growth of graphene single crystals with the absence of intrinsic defects. As the two most concerned parameters, the size and morphology serve critical roles in affecting properties and understanding the growth mechanism of graphene crystals. Therefore, a precise tuning of the size and morphology will be of great significance in scale-up graphene production and wide applications. Here, recent advances in the synthesis of graphene single crystals on both metals and dielectric substrates by the CVD method are discussed. The review mainly covers the size and morphology engineering of graphene single crystals. Furthermore, recent progress in the growth mechanism and device applications of graphene single crystals are presented. Finally, the opportunities and challenges are discussed.
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Affiliation(s)
- Dechao Geng
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, PR China; University of Chinese Academy of Sciences, Beijing, 100049, PR China
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20
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Shu H, Tao XM, Ding F. What are the active carbon species during graphene chemical vapor deposition growth? NANOSCALE 2015; 7:1627-1634. [PMID: 25553809 DOI: 10.1039/c4nr05590j] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The dissociation of carbon feedstock is a crucial step for understanding the mechanism of graphene chemical vapor deposition (CVD) growth. Using first-principles calculations, we performed a comprehensive theoretical study for the population of various active carbon species, including carbon monomers and various radicals, CHi (i = 1, 2, 3, 4), on four representative transition-metal surfaces, Cu(111), Ni(111), Ir(111) and Rh(111), under different experimental conditions. On the Cu surface, which is less active, the population of CH and C monomers at the subsurface is found to be very high and thus they are the most important precursors for graphene CVD growth. On the Ni surface, which is more active than Cu, C monomers at the subsurface dominate graphene CVD growth under most experimental conditions. In contrast, on the active Ir and Rh surfaces, C monomers on the surfaces are found to be very stable and thus are the main precursors for graphene growth. This study shows that the mechanism of graphene CVD growth depends on the activity of catalyst surfaces and the detailed graphene growth process at the atomic level can be controlled by varying the temperature or partial pressure of hydrogen.
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Affiliation(s)
- Haibo Shu
- Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong, China.
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21
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Wang S, Suzuki S, Hibino H. Raman spectroscopic investigation of polycrystalline structures of CVD-grown graphene by isotope labeling. NANOSCALE 2014; 6:13838-13844. [PMID: 25303722 DOI: 10.1039/c4nr03824j] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Topological defects, such as point defects, dislocations and grain boundaries, have a dramatic influence on the chemical and physical properties of large-scale graphene grown by chemical vapor deposition (CVD) method. Here we demonstrate the Raman visualization of polycrystalline structures in an isotopically modified CVD graphene. By means of the reversible reaction of methane on a copper catalyst, the etching of (12)C-lattice and surface deposition of (13)C-atoms occur in CVD graphene by sequentially introducing hydrogen and isotopic methane after standard growth of graphene with full monolayer coverage. Spatial Raman spectroscopic mapping on labeled graphene reveals pronounced network-like (13)C-rich regions, which are further identified to exist along the grain boundaries of graphene by low-energy electron microscopy. The structural defects inside the graphene grains are also targeted in the isotope labeling process. Our work opens a new way to investigate multiple grain structures in CVD graphene with a simple spectroscopic technique.
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Affiliation(s)
- Shengnan Wang
- NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan.
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22
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Wu P, Zhang W, Li Z, Yang J. Mechanisms of graphene growth on metal surfaces: theoretical perspectives. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2014; 10:2136-2150. [PMID: 24687872 DOI: 10.1002/smll.201303680] [Citation(s) in RCA: 38] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2013] [Revised: 02/26/2014] [Indexed: 06/03/2023]
Abstract
Graphene is an important material with unique electronic properties. Aiming to obtain high quality samples at a large scale, graphene growth on metal surfaces has been widely studied. An important topic in these studies is the atomic scale growth mechanism, which is the precondition for a rational optimization of growth conditions. Theoretical studies have provided useful insights for understanding graphene growth mechanisms, which are reviewed in this article. On the mostly used Cu substrate, graphene growth is found to be more complicated than a simple adsorption-dehydrogenation-growth model. Growth on Ni surface is precipitation dominated. On surfaces with a large lattice mismatch to graphene, epitaxial geometry determin a robust nonlinear growth behavior. Further progresses in understanding graphene growth mechanisms is expected with intense theoretical studies using advanced simulation techniques, which will make a guided design of growth protocols practical.
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Affiliation(s)
- Ping Wu
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
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23
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Gong J, Liu J, Wen X, Jiang Z, Chen X, Mijowska E, Tang T. Upcycling Waste Polypropylene into Graphene Flakes on Organically Modified Montmorillonite. Ind Eng Chem Res 2014. [DOI: 10.1021/ie4043246] [Citation(s) in RCA: 64] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Jiang Gong
- State
Key Laboratory of Polymer Physics and Chemistry, Changchun Institute
of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Liu
- State
Key Laboratory of Polymer Physics and Chemistry, Changchun Institute
of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Xin Wen
- State
Key Laboratory of Polymer Physics and Chemistry, Changchun Institute
of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
| | - Zhiwei Jiang
- State
Key Laboratory of Polymer Physics and Chemistry, Changchun Institute
of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xuecheng Chen
- State
Key Laboratory of Polymer Physics and Chemistry, Changchun Institute
of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
- Institute
of Chemical and Environment Engineering, West Pomeranian University of Technology, Szczecin, ulica Pulaskiego 10, 70-322 Szczecin, Poland
| | - Ewa Mijowska
- Institute
of Chemical and Environment Engineering, West Pomeranian University of Technology, Szczecin, ulica Pulaskiego 10, 70-322 Szczecin, Poland
| | - Tao Tang
- State
Key Laboratory of Polymer Physics and Chemistry, Changchun Institute
of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
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24
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Shu H, Chen X, Ding F. The edge termination controlled kinetics in graphene chemical vapor deposition growth. Chem Sci 2014. [DOI: 10.1039/c4sc02223h] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The kinetics of graphene CVD growth is dominated by the type of edge passivation.
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Affiliation(s)
- Haibo Shu
- National Laboratory for Infrared Physics
- Shanghai Institute of Technical Physics
- Chinese Academy of Science
- 200083 Shanghai, China
- Institute of Textiles and Clothing
| | - Xiaoshuang Chen
- Institute of Textiles and Clothing
- Hong Kong Polytechnic University
- Hong Kong, China
| | - Feng Ding
- National Laboratory for Infrared Physics
- Shanghai Institute of Technical Physics
- Chinese Academy of Science
- 200083 Shanghai, China
- Institute of Textiles and Clothing
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