Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate

Geometry-driven carrier extraction enhancement in photovoltaic cells based on arrays of subwavelength light funnels

Texturing the front surface of thin film photovoltaic cells with ordered or disordered arrangements of subwavelength structures is beneficial in terms of efficient light harvesting as well as efficient carrier extraction. Previous studies demonstrated efficient broadband absorption of solar radiation with surface arrays of subwavelength inverted cones (light funnels - LFs). In the current work, we use three-dimensional finite-difference time-domain electromagnetic calculations as well as three-dimensional device calculations to examine carrier extraction from photovoltaic cells that are composed of LF arrays on top of underlying substrates. For the selected geometry under examination, we show a broadband absorption enhancement of 14% for the LF photovoltaic cell compared with a cell based on the respective optically optimized nanopillar arrays. However, we show that the nominal power conversion efficiency is 60% higher in the LF cell which is due to the enhancement of both open-circuit voltage and short-circuit current. The higher open-circuit voltage in the LF cell is due to the higher injection of photocarriers, and the higher short-circuit current is a result of the unique LF geometry that supports efficient carrier extraction due to the naturally occurring gradients of the quasi-Fermi levels and minority carrier conductivity that allow for enhanced contact selectivity. We believe that this work paves the way towards a new approach for carrier collection in photonic devices for energy applications.

Light Trapping with Silicon Light Funnel Arrays

Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel (LF) arrays can serve as efficient absorbing layers on account of their light trapping capabilities, which are associated with the presence of high-density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and the underlying substrates. We show that the absorption in the LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase). This, we suggest, implies that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate, and mode hybridization.

Addressing carrier extraction from optically-optimized nanopillar arrays for thin-film photovoltaics

Decorating the top surface of silicon solar cells with nanopillar arrays of subwavelength periodicity is a promising path toward low-cost thin-film photovoltaics with enhanced solar radiation absorption due to the inherent light trapping capabilities of nanopillar arrays. Common practice and knowledge for the efficient carrier extraction from the excited nanopillars is the formation of ultra-shallow radial p-n junctions that provide both short carrier collection lengths, and also ensure that the volume of the photo inactive emitter is as small as possible. In the current manuscript, both finite-difference time-domain simulations and three-dimensional device simulations are used to examine carrier extraction from nanopillar arrays that are geometrically optimized in terms of array periodicity and nanopillar diameter to provide maximum absorption of the solar spectrum. The discussion is limited to nanopillars with heights of 2 μm in line with what is currently available with leading top-down fabrication technologies for the formation of nanopillars with smooth sidewalls and radial uniformity. The examination considers both radial and axial homojunctions for various junction depths. It is shown that, contrary to common practice and knowledge, the ultra-shallow junctions are detrimental to the photovoltaic performance of such systems while the radial configuration with a junction depth of ∼50 nm is the most efficient. Furthermore, the open circuit voltage is highest for axial junctions with a junction depth of 100 nm. Also, it is shown that the axial junction is preferable in the low dopant concentration regime and that overall, the axial junction is less sensitive to variations in junction depth.

Observation of strongly enhanced photoluminescence from inverted cone-shaped silicon nanostructures. [corrected]

Silicon nanowires (SiNWs) attached to a wafer substrate are converted to inversely tapered silicon nanocones (SiNCs). After excitation with visible light, individual SiNCs show a 200-fold enhanced integral band-to-band luminescence as compared to a straight SiNW reference. Furthermore, the reverse taper is responsible for multifold emission peaks in addition to the relatively broad near-infrared (NIR) luminescence spectrum. A thorough numerical mode analysis reveals that unlike a SiNW the inverted SiNC sustains a multitude of leaky whispering gallery modes. The modes are unique to this geometry and they are characterized by a relatively high quality factor (Q ~ 1300) and a low mode volume (0.2 < (λ/n_eff)³ < 4). In addition they show a vertical out coupling of the optically excited NIR luminescence with a numerical aperture as low as 0.22. Estimated Purcell factors F_p ∝ Q/V_m of these modes can explain the enhanced luminescence in individual emission peaks as compared to the SiNW reference. Investigating the relation between the SiNC geometry and the mode formation leads to simple design rules that permit to control the number and wavelength of the hosted modes and therefore the luminescent emission peaks.

Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

We report on the electron beam induced current (EBIC) microscopy and cathodoluminescence (CL) characterization correlated with compositional analysis of light emitting diodes based on core/shell InGaN/GaN nanowire arrays. The EBIC mapping of cleaved fully operational devices allows to probe the electrical properties of the active region with a nanoscale resolution. In particular, the electrical activity of the p-n junction on the m-planes and on the semi-polar planes of individual nanowires is assessed in top view and cross-sectional geometries. The EBIC maps combined with CL characterization demonstrate the impact of the compositional gradients along the wire axis on the electrical and optical signals: the reduction of the EBIC signal toward the nanowire top is accompanied by an increase of the CL intensity. This effect is interpreted as a consequence of the In and Al gradients in the quantum well and in the electron blocking layer, which influence the carrier extraction efficiency. The interface between the nanowire core and the radially grown layer is shown to produce in some cases a transitory EBIC signal. This observation is explained by the presence of charged traps at this interface, which can be saturated by electron irradiation.

Enhanced photovoltaics inspired by the fovea centralis

The fovea centralis is a closely-packed vertical array of inverted-cone photoreceptor cells located in the retina that is responsible for high acuity binocular vision. The cones are operational in well-lit environments and are responsible for trapping the impinging illumination. We present the vertical light-funnel silicon array as a light-trapping technique for photovoltaic applications that is bio-inspired by the properties of the fovea centralis. We use opto-electronic simulations to evaluate the performance of light-funnel solar cell arrays. Light-funnel arrays present ~65% absorption enhancement compared to a silicon film of identical thickness and exhibit power conversion efficiencies that are 60% higher than those of optimized nanowire arrays of the same thickness although nanowire arrays consist of more than 2.3 times the amount of silicon. We demonstrate the superior absorption of the light-funnel arrays as compared with recent advancements in the field. Fabrication of silicon light-funnel arrays using low-cost processing techniques is demonstrated.