Broadband infrared photoluminescence in silicon nanowires with high density stacking faults

Two-dimensional graphitic carbon nitride/N-doped carbon with a direct Z-scheme heterojunction for photocatalytic generation of hydrogen

Photocatalysts with a direct Z-scheme heterojunction are promising by virtue of the effectively enhanced separation of charge carriers, high retention of redox ability and the absence of backward photocatalytic reactions. Their activity depends on band alignment and interfacial configurations between two semiconductors for charge carrier kinetics and the effective active sites for photochemical reactions. Herein, a two-dimensional (2D) graphitic carbon nitride/N-doped carbon (C₃N₄/NC) photocatalyst is synthesized by a gas template (NH₄Cl)-assisted thermal condensation method. C₃N₄/NC has the synthetic merits of a direct Z-scheme heterojunction, 2D-2D interfacial contact, and enhanced specific surface area to improve charge separation kinetics and provide abundant active sites for photochemical reaction. It exhibits an over 46-fold increase of the photocatalytic hydrogen production rate compared to bulk C₃N₄ under visible light illumination. This work demonstrates the great potential of 2D Z-scheme heterojunctions for photocatalysis and will inspire more related work in the future.

Solution processable in situ passivated silicon nanowires

The 1D confinement of silicon in the form of a nanowire revives its newness with the emergence of new optical and electronic properties. However, the development of a production process for silicon nanowires (SiNWs) having a high quality crystalline core and exhibiting good stability in solution with effective outer-shell defect passivation is still a challenge. In this work, SiNWs are prepared from a silicon wafer using solution processing steps, and importantly outer-shell-defect passivation is achieved by in situ grafting of organic molecules based on thin films. Defect passivation and the high quality of the SiNWs are confirmed with thin films on glass and flexible plastic substrates. A dramatic enhancement in both the fluorescence lifetime and infrared photoluminescence is observed. The in situ organic passivation of SiNWs has potential application in all low-dimensional silicon devices including infrared detectors, solar cells and lithium-ion battery anodes.

Synchronous, Crosstalk-free Correlative AFM and Confocal Microscopies/Spectroscopies

Microscopies have become pillars of our characterization tools to observe biological systems and assemblies. Correlative and synchronous use of different microscopies relies on the fundamental assumption of non-interference during images acquisitions. In this work, by exploring the correlative use of Atomic Force Microscopy and confocal-Fluorescence-Lifetime Imaging Microscopy (AFM-FLIM), we quantify cross-talk effects occurring during synchronous acquisition. We characterize and minimize optomechanical forces on different AFM cantilevers interfering with normal AFM operation as well as spurious luminescence from the tip and cantilever affecting time-resolved fluorescence detection. By defining non-interfering experimental imaging parameters, we show accurate real-time acquisition and two-dimensional mapping of interaction force, fluorescence lifetime and intensity characterizing morphology (AFM) and local viscosity (FLIM) of gel and fluid phases separation of supported lipid model membranes. Finally, as proof of principle by means of synchronous force and fluorescence spectroscopies, we precisely tune the lifetime of a fluorescent nanodiamond positioned on the AFM tip by controlling its distance from a metallic surface. This opens up a novel pathway of quench sensing to image soft biological samples such as membranes since it does not require tip-sample mechanical contact in contrast with conventional AFM in liquid.

Ab initio studies of the optoelectronic structure of undoped and doped silicon nanocrystals and nanowires: the role of size, passivation, symmetry and phase

Results from ab initio calculations for singly- and co- doped Si nanocrystals and nanowires are presented.

Nature of Hexagonal Silicon Forming via High-Pressure Synthesis: Nanostructured Hexagonal 4H Polytype

Hexagonal Si allotropes are expected to enhance light absorption in the visible range as compared to common cubic Si with diamond structure. Therefore, synthesis of these materials is crucial for the development of Si-based optoelectronics. In this work, we combine in situ high-pressure high-temperature synthesis and vacuum heating to obtain hexagonal Si. High pressure is one of the most promising routes to stabilize these allotropes. It allows one to obtain large-volume nanostructured ingots by a sequence of direct solid-solid transformations, ensuring high-purity samples for detailed characterization. Thanks to our synthesis approach, we provide the first evidence of a polycrystalline bulk sample of hexagonal Si. Exhaustive structural analysis, combining fine-powder X-ray and electron diffraction, afforded resolution of the crystal structure. We demonstrate that hexagonal Si obtained by high-pressure synthesis correspond to Si-4H polytype (ABCB stacking) in contrast with Si-2H (AB stacking) proposed previously. This result agrees with prior calculations that predicted a higher stability of the 4H form over 2H form. Further physical characterization, combining experimental data and ab initio calculations, have shown a good agreement with the established structure. Strong photoluminescence emission was observed in the visible region for which we foresee optimistic perspectives for the use of this material in Si-based photovoltaics.

Nonlinear Composition-Dependent Optical Spectroscopy of Ba2xSr2-2xV2O7

In general, adjusting the composition of a fluorescent material is an effective way to tune its luminescent properties such as peak energy and bandwidth. In most solid-solutions, the emission peak shifts linearly with the materials' composition, which is referred to as Vegard's Law. However, we found extraordinary variations in our samples Ba2xSr2-2xV2O7, that is, both the excitation and emission peaks show nonlinear dependence on the composition x, and the same is true for the spectral bandwidths. The nonlinearities are not due to structural anomaly, as all the samples are confirmed to be solid-solutions by X-ray diffraction measurements. To explain these phenomena, we proposed a model by considering the disorder of Ba(2+) and Sr(2+) distributions in solid-solutions and the changes of configurations between the ground and excited electronic states. This novel phenomenon could be applied to further exploit new fluorescent materials.

Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions

Recent experimental investigations have confirmed the possibility to synthesize and exploit polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles methods based on density functional theory and many-body perturbation theory to investigate the electronic and optical properties of hexagonal-diamond and cubic-diamond Si NWs as well as their homojunctions. We show that hexagonal-diamond NWs are characterized by a more pronounced quantum confinement effect than cubic-diamond NWs. Furthermore, they absorb more light in the visible region with respect to cubic-diamond ones and, for most of the studied diameters, they are direct band gap materials. The study of the homojunctions reveals that the diameter has a crucial effect on the band alignment at the interface. In particular, at small diameters the band-offset is type-I whereas at experimentally relevant sizes the offset turns up to be of type-II. These findings highlight intriguing possibilities to modulate electron and hole separations as well as electronic and optical properties by simply modifying the crystal phase and the size of the junction.

Stacking fault related luminescence in GaN nanorods

Optical and structural properties are presented for GaN nanorods (NRs) grown in the [0001] direction on Si(111) substrates by direct-current reactive magnetron sputter epitaxy. Transmission electron microscopy (TEM) reveals clusters of dense stacking faults (SFs) regularly distributed along the c-axis. A strong emission line at ∼3.42 eV associated with the basal-plane SFs has been observed in luminescence spectra. The optical signature of SFs is stable up to room temperatures with the activation energy of ∼20 meV. Temperature-dependent time-resolved photoluminescence properties suggest that the recombination mechanism of the 3.42 eV emission can be understood in terms of multiple quantum wells self-organized along the growth axis of NRs.