Flexible organic field-effect transistors-based biosensors: progress and perspectives

Organic field-effect transistors (OFETs) have been proposed beyond three decades while becoming a research hotspot again in recent years because of the fast development of flexible electronics. Many novel flexible OFETs-based devices have been reported in these years. Among these devices, flexible OFETs-based sensors made great strides because of the extraordinary sensing capability of FET. Most of these flexible OFETs-based sensors were designed for biological applications due to the advantages of flexibility, reduced complexity, and lightweight. This paper reviews the materials, fabrications, and applications of flexible OFETs-based biosensors. Besides, the challenges and opportunities of the flexible OFETs-based biosensors are also discussed.

Recent Advances in Realizing Highly Aligned Organic Semiconductors by Solution-Processing Approaches

Solution-processing approaches are widely used for controlling the aggregation structure of organic semiconductors because they are fast, efficient, and have strong practicability. Effective regulation of the aggregation structure of molecules to achieve highly ordered molecular stacking is key to realizing effective carrier transport and high-performance devices. Numerous studies have achieved highly aligned organic semiconductors using different solution-processing approaches. This article provides a detailed review of the prevalent solution-processing technologies and emerging methods developed over the past few years for the alignment of organic semiconducting materials. These technologies and methods are classified according to the processing principle. This review focuses on the principles of different experimental techniques, improvements upon the conventional methods, and state-of-the-art performance of resulting devices. In addition, a brief discussion of the characteristics and development prospects of various methods is presented.

Motion-Programmed Bar-Coating Method with Controlled Gap for High-Speed Scalable Preparation of Highly Crystalline Organic Semiconductor Thin Films

Solution-processed organic semiconductor thin films with high charge carrier mobility are necessary for development of next-generation electronic applications, but the rapid processing speed demanded for the industrial-scale production of these thin films poses a challenge to control of their thin-film properties, such as crystallinity, morphology, and film-to-film uniformity. Here, we show a new solution coating method that is compatible with a roll-to-roll printing process at a rate of 2 mm s^-1 by using a gap-controllable wire bar, motion-programming strategy, and blended active inks. We demonstrate that the coating bar, the horizontal motion of which is repeatedly brought to an intermittent standstill, results in an improved vertically self-stratified structure and a high crystallinity for organic active inks comprising a semiconducting small molecule and a semiconducting polymer. Furthermore, organic transistors prepared by the developed method show superior hole mobility with high operational stability (hysteresis and kink-free transfer characteristics), high uniformity over a large area of a 4 in. wafer, good reproducibility, and superior electromechanical stabilities on a flexible plastic substrate. The bar-coating approach demonstrated here will be a step toward developing industrial-scale practical organic electronics applications.

Guided Formation of Large Crystals of Organic and Perovskite Semiconductors by an Ultrasonicated Dispenser and Their Application as the Active Matrix of Photodetectors

The crystallization of organic or perovskite semiconductors reflects the intermolecular interactions and crucially determines the charge transport in opto-electronic devices. In this report, we demonstrate and investigate the use of an ultrasonicated dispenser to guide the formation of crystals of organic and perovskite semiconductors. The moving speed of the dispenser affects the match between the concentration gradient and evaporation rate near the three-phase contact lines and thus the generation of various crystallization morphologies. The mechanism of crystallization is given by a relationship between the calculated concentration gradient profile and the degree of crystal alignment. Highly ordered, aligned crystals are achieved for both organic bis(triisopropylsilylethynyl)-pentacene and perovskite MAPbI₃ semiconductors. Absorption spectra, Raman scattering spectroscopy analysis, and grazing incidence wide-angle X-ray scattering measurement reveal the strong anisotropy of the crystalline structures. The aligned crystals lead to remarkably enhanced electrical performances in an organic thin-film transistor (OTFT) and perovskite photodetector. As a demonstration, we combine the OTFT with photodetectors to achieve an active matrix of normally off, gate-tunable photodetectors that operate under ambient conditions.

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

Nitrogen dioxide (NO₂) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO₂ responsivity of OTFTs to 15 ppm of NO₂ is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO₂, while showing a preferential response to NO₂ compared with SO₂, NH₃, CO, and H₂S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO₂ gas sensing performance.

Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm²/Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

Directional Solvent Vapor Annealing for Crystal Alignment in Solution-Processed Organic Semiconductors

A unified approach of directional solvent vapor annealing for crystal alignment in solution-processed organic semiconductors is proposed. Highly crystalline molecular self-assembly of the drop-cast technique is further enhanced by postprocessing scheme of the solvent vapor annealing with additional benefit of alignment of the crystalline domains. In this technique, a mixture of carrier gas and solvent vapors are made to flow in a certain direction and in the close proximity of the surface of the substrates carrying the solution. Flow of the carrier gas imparts directionality to the semiconducting crystalline ribbons, whereas the influx of the solvent vapors improves the crystalline order in the semiconducting film. The flow rate of the carrier gas and the position of the substrate in the interaction chamber are the primary regulating factors, which have the ability to provide a semiconducting layer with a well-aligned and interconnected assembly of long ribbons. These favorable film properties further materialize in the form of electrical performance of the corresponding field-effect transistors. The versatility of this technique makes it a viable alternative for the solution processing of organic semiconductors.

Organic transistors based on airbrushed small molecule-insulating polymer blends with mobilities exceeding 1 cm2 V−1 s−1

High performance organic transistors have been realized via airbrush technique, using small molecule-insulating polymer blends.

Electrospray-processed soluble acenes toward the realization of high-performance field-effect transistors

Functionalized acenes have proven to be promising compounds in the field of molecular electronics because of their unique features in terms of the stability, performance, and ease of processing. The emerging concept of large-area-compatible techniques for flexible electronics has brought about a wide variety of well-established techniques for the deposition of soluble acenes, with spray-coating representing an especially fruitful approach. In the present study, electrostatic spray deposition is proposed as an alternative to the conventional spray-coating processes, toward the realization of high-performance organic field-effect transistors (OFETs), on both rigid and flexible substrates. Particularly, a thorough study on the effect of the solvent and spraying regime on the resulting crystalline film's morphology is performed. By optimization of the process conditions in terms of control over the size as well as the crystallization scheme of the droplets, desirable morphological features along with high-quality crystal domains are obtained. The fabricated OFETs exhibit excellent electrical characteristics, with high field-effect mobility up to 0.78 cm(2)/(V s), I(on)/I(off) >10(4), and near-zero threshold voltages. Additionally, the good performance of the OFETs realized on plastic substrates gives great potentiality to the proposed method for applications in the challenging field of large-area electronics.

Built-in water resistance in organic transistors modified with self-assembled monolayers

We systematically investigated the effects of a self-assembled monolayer (SAM), prepared on the gate dielectric, on the performances of bottom-gate organic field-effect transistor (OFET) devices under various humid environments.