All-Aerosol-Jet-Printed Carbon Nanotube Transistor with Cross-Linked Polymer Dielectrics

The printability of reliable gate dielectrics and their influence on the stability of the device are some of the primary concerns regarding the practical application of printed transistors. Major ongoing research is focusing on the structural properties of dielectric materials and deposition parameters to reduce interface charge traps and hysteresis caused by the dielectric-semiconductor interface and dielectric bulk. This research focuses on improving the dielectric properties of a printed polymer material, cross-linked polyvinyl phenol (crPVP), by optimizing the cross-linking parameters as well as the aerosol jet printability. These improvements were then applied to the fabrication of completely printed carbon nanotube (CNT)-based thin-film transistors (TFT) to reduce the gate threshold voltage (V_th) and hysteresis in V_th during device operation. Finally, a fully aerosol-jet-printed CNT device was demonstrated using a 2:1 weight ratio of PVP with the cross-linker poly(melamine-co-formaldehyde) methylated (PMF) in crPVP as the dielectric material. This device shows significantly less hysteresis and can be operated at a gate threshold voltage as low as -4.8 V with an on/off ratio of more than 10⁴.

High-Mobility Fungus-Triggered Biodegradable Ultraflexible Organic Transistors

Biodegradable organic field-effect transistors (OFETs) have drawn tremendous attention for potential applications such as green electronic skins, degradable flexible displays, and novel implantable devices. However, it remains a huge challenge to simultaneously achieve high mobility, stable operation and controllable biodegradation of OFETs, because most of the widely used biodegradable insulating materials contain large amounts of hydrophilic groups. Herein, it is firstly proposed fungal-degradation ultraflexible OFETs based on the crosslinked dextran (C-dextran) as dielectric layer. The crosslinking strategy effectively eliminates polar hydrophilic groups and improves water and solvent resistance of dextran dielectric layer. The device with spin-coated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor and C-dextran dielectric exhibits the highest mobility up to 7.72 cm² V^-1 s^-1 , which is higher than all the reported degradable OFETs. Additionally, the device still maintains high performance regardless of in an environment humidity up to 80% or under the extreme bending radius of 0.0125 mm. After completion of their mission, the device can be controllably biodegraded by fungi without any adverse environmental effects, promoting the natural ecological cycles with the concepts of "From nature, for nature". This work opens up a new avenue for realizing high-performance biodegradable OFETs, and advances the process of the "green" electrical devices in practical applications.

High-performance five-ring-fused organic semiconductors for field-effect transistors

Organic molecular semiconductors have been paid great attention due to their advantages of low-temperature processability, low fabrication cost, good flexibility, and excellent electronic properties. As a typical example of five-ring-fused organic semiconductors, a single crystal of pentacene shows a high mobility of up to 40 cm² V^-1 s^-1, indicating its potential application in organic electronics. However, the photo- and optical instabilities of pentacene make it unsuitable for commercial applications. But, molecular engineering, for both the five-ring-fused building block and side chains, has been performed to improve the stability of materials as well as maintain high mobility. Here, several groups (thiophenes, pyrroles, furans, etc.) are introduced to design and replace one or more benzene rings of pentacene and construct novel five-ring-fused organic semiconductors. In this review article, ∼500 five-ring-fused organic prototype molecules and their derivatives are summarized to provide a general understanding of this catalogue material for application in organic field-effect transistors. The results indicate that many five-ring-fused organic semiconductors can achieve high mobilities of more than 1 cm² V^-1 s^-1, and a hole mobility of up to 18.9 cm² V^-1 s^-1 can be obtained, while an electron mobility of 27.8 cm² V^-1 s^-1 can be achieved in five-ring-fused organic semiconductors. The HOMO-LUMO levels, the synthesis process, the molecular packing, and the side-chain engineering of five-ring-fused organic semiconductors are analyzed. The current problems, conclusions, and perspectives are also provided.

Control of Concentration of Nonhydrogen-Bonded Hydroxyl Groups in Polymer Dielectrics for Organic Field-Effect Transistors with Operational Stability

Poly(4-vinylphenol) (PVP) is a promising gate dielectric material for organic field-effect transistors (OFETs) and circuits fabricated on plastic substrates. Thermal cross-linking of PVP with a cross-linker, such as poly(melamine- co-formaldehyde) methylated (PMF), at a high temperature (above 170 °C) is widely considered an effective method to remove residual hydroxyl groups that induce polarization effects in the dielectric bulk. However, the threshold voltage shift in transfer characteristics is still observed for an OFET with a PVP-PMF dielectric when it is operated at a slow gate voltage sweep rate. The present study examines the cause of the undesired hysteresis phenomenon and suggests a route to enable a reliable operation. We systematically investigate the effect of the PVP-PMF weight ratio and their annealing temperature on the transfer characteristics of OFETs. We discover that the size of the hysteresis is closely related to the concentration of nonhydrogen-bonded hydroxyl groups in the dielectric bulk and this is controlled by the weight ratio. At a ratio of 0.5:1, a complete elimination of hysteresis was observed irrespective of the annealing temperature. We finally demonstrate a highly reliable operation of small-molecule-based OFETs fabricated on a plastic substrate at a low temperature.

All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis

We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. The TFT arrays were manufactured on flexible polymer substrates in ambient condition without the need for cleanroom environment or inert atmosphere and at a maximum temperature of 150 °C. Alternative manufacturing processes for electronic devices such as inkjet printing suffer from lower accuracy compared to traditional microelectronic manufacturing methods. Furthermore, usually printing methods do not allow the manufacturing of electronic devices with high yield (high number of functional devices). In general, the manufacturing yield is much lower compared to the established conventional manufacturing methods based on lithography. Thus, the focus of this contribution is set on a comprehensive analysis of defective TFTs printed by inkjet technology. Based on root cause analysis, we present the defects by developing failure categories and discuss the reasons for the defects. This procedure identifies failure origins and allows the optimization of the manufacturing resulting finally to a yield improvement.