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Woo G, Yoo H, Kim T. Hybrid Thin-Film Materials Combinations for Complementary Integration Circuit Implementation. MEMBRANES 2021; 11:membranes11120931. [PMID: 34940431 PMCID: PMC8709032 DOI: 10.3390/membranes11120931] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Revised: 11/16/2021] [Accepted: 11/22/2021] [Indexed: 12/29/2022]
Abstract
Beyond conventional silicon, emerging semiconductor materials have been actively investigated for the development of integrated circuits (ICs). Considerable effort has been put into implementing complementary circuits using non-silicon emerging materials, such as organic semiconductors, carbon nanotubes, metal oxides, transition metal dichalcogenides, and perovskites. Whereas shortcomings of each candidate semiconductor limit the development of complementary ICs, an approach of hybrid materials is considered as a new solution to the complementary integration process. This article revisits recent advances in hybrid-material combination-based complementary circuits. This review summarizes the strong and weak points of the respective candidates, focusing on their complementary circuit integrations. We also discuss the opportunities and challenges presented by the prospect of hybrid integration.
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Affiliation(s)
- Gunhoo Woo
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 16419, Korea;
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea
- Correspondence: (H.Y.); (T.K.)
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon 16419, Korea;
- Department of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Korea
- Correspondence: (H.Y.); (T.K.)
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2
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Liu T, Zhao J, Xu W, Dou J, Zhao X, Deng W, Wei C, Xu W, Guo W, Su W, Jie J, Cui Z. Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage. NANOSCALE 2018; 10:614-622. [PMID: 29235605 DOI: 10.1039/c7nr07334h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec-1 and ON/OFF ratio of 106, which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 105) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.
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Affiliation(s)
- Tingting Liu
- Printable Electronics Research Centre, Suzhou Institute of Nanotech and nano-bionics, Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu Province 215123, PR China.
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Ding Y, Zhu C, Liu J, Duan Y, Yi Z, Xiao J, Wang S, Huang Y, Yin Z. Flexible small-channel thin-film transistors by electrohydrodynamic lithography. NANOSCALE 2017; 9:19050-19057. [PMID: 29094745 DOI: 10.1039/c7nr06075k] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Small-channel organic thin-film transistors (OTFTs) are an essential component of microelectronic devices. With the advent of flexible electronics, the fabrication of OTFTs still faces numerous hurdles in the realization of highly-functional, devices of commercial value. Herein, a concise and efficient procedure is proposed for the fabrication of flexible, small-channel organic thin-film transistor (OTFT) arrays on large-area substrates that circumvents the use of photolithography. By employing a low-cost and high-resolution mechano-electrospinning technology, large-scale micro/nanofiber-based patterns can be digitally printed on flexible substrates (Si wafer or plastic), which can act as the channel mask of TFT instead of a photolithography reticle. The dimensions of the micro/nanochannel can be manipulated by tuning the processing parameters such as the nozzle-to-substrate distance, applied voltage, and fluid supply. The devices exhibit excellent electrical properties with high mobilities (∼0.62 cm2 V-1 s-1) and high on/off current ratios (∼2.47 × 106), and they are able to maintain stability upon being bent from 25 mm to 2.75 mm (bending radius) over 120 testing cycles. This electrohydrodynamic lithography-based approach is a digital, programmable, and reliable alternative for easily fabricating flexible, small-channel OTFTs, which can be integrated into flexible and wearable devices.
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Affiliation(s)
- Yajiang Ding
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, 430074, China
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Shulga AG, Derenskyi V, Salazar-Rios JM, Dirin DN, Fritsch M, Kovalenko MV, Scherf U, Loi MA. An All-Solution-Based Hybrid CMOS-Like Quantum Dot/Carbon Nanotube Inverter. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1701764. [PMID: 28714202 DOI: 10.1002/adma.201701764] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2017] [Revised: 05/15/2017] [Indexed: 05/20/2023]
Abstract
The development of low-cost, flexible electronic devices is subordinated to the advancement in solution-based and low-temperature-processable semiconducting materials, such as colloidal quantum dots (QDs) and single-walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high-performance complementary metal-oxide-semiconductor (CMOS)-like inverters is demonstrated. The n-type field effect transistors (FETs) based on I- capped PbS QDs (Vth = 0.2 V, on/off = 105 , SS-th = 114 mV dec-1 , µe = 0.22 cm2 V-1 s-1 ) and the p-type FETs with tailored parameters based on low-density random network of SWCNTs (Vth = -0.2 V, on/off > 105 , SS-th = 63 mV dec-1 , µh = 0.04 cm2 V-1 s-1 ) are integrated on the same substrate in order to obtain high-performance hybrid inverters. The inverters operate in the sub-1 V range (0.9 V) and have high gain (76 V/V), large maximum-equal-criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV).
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Affiliation(s)
- Artem G Shulga
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Vladimir Derenskyi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Jorge Mario Salazar-Rios
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Dmitry N Dirin
- Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, 8093, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, 8600, Switzerland
| | - Martin Fritsch
- Macromolecular Chemistry Group (buwmakro), Bergische Universität Wuppertal, Gauss-Str. 20, Wuppertal, D-42119, Germany
| | - Maksym V Kovalenko
- Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir Prelog Weg 1, Zürich, 8093, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, Dübendorf, 8600, Switzerland
| | - Ullrich Scherf
- Macromolecular Chemistry Group (buwmakro), Bergische Universität Wuppertal, Gauss-Str. 20, Wuppertal, D-42119, Germany
| | - Maria A Loi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
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Yang Y, Ding L, Han J, Zhang Z, Peng LM. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films. ACS NANO 2017; 11:4124-4132. [PMID: 28333433 DOI: 10.1021/acsnano.7b00861] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.
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Affiliation(s)
- Yingjun Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Jie Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
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Inkjet printed circuits based on ambipolar and p-type carbon nanotube thin-film transistors. Sci Rep 2017; 7:39627. [PMID: 28145438 PMCID: PMC5286420 DOI: 10.1038/srep39627] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2016] [Accepted: 11/24/2016] [Indexed: 01/20/2023] Open
Abstract
Ambipolar and p-type single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) are reliably integrated into various complementary-like circuits on the same substrate by inkjet printing. We describe the fabrication and characteristics of inverters, ring oscillators, and NAND gates based on complementary-like circuits fabricated with such TFTs as building blocks. We also show that complementary-like circuits have potential use as chemical sensors in ambient conditions since changes to the TFT characteristics of the p-channel TFTs in the circuit alter the overall operating characteristics of the circuit. The use of circuits rather than individual devices as sensors integrates sensing and signal processing functions, thereby simplifying overall system design.
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Liang X, Xia J, Dong G, Tian B, Peng L. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application. Top Curr Chem (Cham) 2016; 374:80. [PMID: 27873286 DOI: 10.1007/s41061-016-0083-6] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2016] [Accepted: 11/05/2016] [Indexed: 01/05/2023]
Abstract
Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.
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Affiliation(s)
- Xuelei Liang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
| | - Jiye Xia
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China
| | - Guodong Dong
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China
| | - Boyuan Tian
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China
| | - Lianmao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
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Geier ML, Moudgil K, Barlow S, Marder SR, Hersam MC. Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer. NANO LETTERS 2016; 16:4329-4334. [PMID: 27253896 DOI: 10.1021/acs.nanolett.6b01393] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.
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Affiliation(s)
- Michael L Geier
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Karttikay Moudgil
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Stephen Barlow
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Seth R Marder
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Institute of Technology , Atlanta, Georgia 30332, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
- Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
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Zhao Y, Li Q, Xiao X, Li G, Jin Y, Jiang K, Wang J, Fan S. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks. ACS NANO 2016; 10:2193-2202. [PMID: 26768020 DOI: 10.1021/acsnano.5b06726] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We have proposed and fabricated stable and repeatable, flexible, single-walled carbon nanotube (SWCNT) thin film transistor (TFT) complementary metal-oxide-semiconductor (CMOS) integrated circuits based on a three-dimensional (3D) structure. Two layers of SWCNT-TFT devices were stacked, where one layer served as n-type devices and the other one served as p-type devices. On the basis of this method, it is able to save at least half of the area required to construct an inverter and make large-scale and high-density integrated CMOS circuits easier to design and manufacture. The 3D flexible CMOS inverter gain can be as high as 40, and the total noise margin is more than 95%. Moreover, the input and output voltage of the inverter are exactly matched for cascading. 3D flexible CMOS NOR, NAND logic gates, and 15-stage ring oscillators were fabricated on PI substrates with high performance as well. Stable electrical properties of these circuits can be obtained with bending radii as small as 3.16 mm, which shows that such a 3D structure is a reliable architecture and suitable for carbon nanotube electrical applications in complex flexible and wearable electronic devices.
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Affiliation(s)
- Yudan Zhao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Xiaoyang Xiao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Guanhong Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Yuanhao Jin
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Jiaping Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
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