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Tyagi D, Laxmi V, Basu N, Reddy L, Tian Y, Ouyang Z, Nayak PK. Recent advances in two-dimensional perovskite materials for light-emitting diodes. DISCOVER NANO 2024; 19:109. [PMID: 38954158 PMCID: PMC11219672 DOI: 10.1186/s11671-024-04044-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Accepted: 06/10/2024] [Indexed: 07/04/2024]
Abstract
Light-emitting diodes (LEDs) are an indispensable part of our daily life. After being studied for a few decades, this field still has some room for improvement. In this regard, perovskite materials may take the leading role. In recent years, LEDs have become a most explored topic, owing to their various applications in photodetectors, solar cells, lasers, and so on. Noticeably, they exhibit significant characteristics in developing LEDs. The luminous efficiency of LEDs can be significantly enhanced by the combination of a poor illumination LED with low-dimensional perovskite. In 2014, the first perovskite-based LED was illuminated at room temperature. Furthermore, two-dimensional (2D) perovskites have enriched this field because of their optical and electronic properties and comparatively high stability in ambient conditions. Recent and relevant advancements in LEDs using low-dimensional perovskites including zero-dimensional to three-dimensional materials is reported. The major focus of this article is based on the 2D perovskites and their heterostructures (i.e., a combination of 2D perovskites with transition metal dichalcogenides, graphene, and hexagonal boron nitride). In comparison to 2D perovskites, heterostructures exhibit more potential for application in LEDs. State-of-the-art perovskite-based LEDs, current challenges, and prospects are also discussed.
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Affiliation(s)
- Deepika Tyagi
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
| | - Vijay Laxmi
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Nilanjan Basu
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Leelakrishna Reddy
- Department of Physics, University of Johannesburg, Johannesburg, 2006, South Africa
| | - Yibin Tian
- College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Zhengbiao Ouyang
- Key Laboratory of Optoelectronics Devices and Systems of Ministry of Education and Guangdong Province, College of Electronic Science and Technology of Shenzhen University, THz Technical Research Center of Shenzhen University, Shenzhen University, Shenzhen, 518060, China.
| | - Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai, 600036, India.
- Centre for Nano and Material Sciences, Jain (Deemed-to-be University), Jain Global Campus, Kanakapura, , Bangalore, Karnataka, 562112, India.
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Li Z, Yan Y, Xu CY, Li Y, Geng Y. Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27640-27649. [PMID: 38759102 DOI: 10.1021/acsami.4c03196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2024]
Abstract
The unique features of edges in van der Waals materials may lead to edge-basal plane contacts that could provide new opportunities for electronic and optoelectronic devices. However, few studies have addressed edge/basal plane contact heterojunctions owing to the formidable challenges in integrating edges with the basal plane to form a heterojunction. Here, taking the example of black phosphorus (BP)/ReS2, a heterojunction with contact between the edge and the basal plane was successfully achieved by the introduction of a nanoskiving technique to fabricate BP edges with controlled orientation, followed by the dry transfer of a ReS2 flake. The deformation of BP during the nanoskiving process was clearly revealed, where interlayer slipping in the BP determined the formation of the edges. The edge/basal plane contact heterojunctions based on BP/ReS2 exhibited a reverse-rectifying behavior upon contact, and a high rectifying current was attributed to direct tunneling and Fowler-Nordheim tunneling in low and high bias regimes, respectively. As a photodetector, the heterojunction diode demonstrated an impressive responsivity of 65 A/W, a rapid response time (<10 ms), and polarization-sensitive detection under 532 nm illumination without gate biasing.
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Affiliation(s)
- Zihan Li
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China
- Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China
| | - Yongda Yan
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China
- Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China
| | - Cheng Yan Xu
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Yang Li
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Yanquan Geng
- Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China
- Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001, Heilongjiang, PR China
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Myers A, Li Z, Gish MK, Earley JD, Johnson JC, Hermosilla-Palacios MA, Blackburn JL. Ultrafast Charge Transfer Cascade in a Mixed-Dimensionality Nanoscale Trilayer. ACS NANO 2024; 18:8190-8198. [PMID: 38465641 PMCID: PMC10958597 DOI: 10.1021/acsnano.3c12179] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 02/23/2024] [Accepted: 03/05/2024] [Indexed: 03/12/2024]
Abstract
Innovation in optoelectronic semiconductor devices is driven by a fundamental understanding of how to move charges and/or excitons (electron-hole pairs) in specified directions for doing useful work, e.g., for making fuels or electricity. The diverse and tunable electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) and one-dimensional (1D) semiconducting single-walled carbon nanotubes (s-SWCNTs) make them good quantum confined model systems for fundamental studies of charge and exciton transfer across heterointerfaces. Here we demonstrate a mixed-dimensionality 2D/1D/2D MoS2/SWCNT/WSe2 heterotrilayer that enables ultrafast photoinduced exciton dissociation, followed by charge diffusion and slow recombination. Importantly, the heterotrilayer serves to double charge carrier yield relative to a MoS2/SWCNT heterobilayer and also demonstrates the ability of the separated charges to overcome interlayer exciton binding energies to diffuse from one TMDC/SWCNT interface to the other 2D/1D interface, resulting in Coulombically unbound charges. Interestingly, the heterotrilayer also appears to enable efficient hole transfer from SWCNTs to WSe2, which is not observed in the identically prepared WSe2/SWCNT heterobilayer, suggesting that increasing the complexity of nanoscale trilayers may modify dynamic pathways. Our work suggests "mixed-dimensionality" TMDC/SWCNT based heterotrilayers as both interesting model systems for mechanistic studies of carrier dynamics at nanoscale heterointerfaces and for potential applications in advanced optoelectronic systems.
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Affiliation(s)
- Alexis
R. Myers
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
- Department
of Chemistry, University of Colorado−Boulder, Boulder, Colorado 80309, United States
| | - Zhaodong Li
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
- The
Institute of Technological Sciences, Wuhan
University, Wuhan, Hubei 430072, China
| | - Melissa K. Gish
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Justin D. Earley
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
- Department
of Chemistry, University of Colorado−Boulder, Boulder, Colorado 80309, United States
| | - Justin C. Johnson
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
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Tan CM, Fukui N, Takada K, Maeda H, Selezneva E, Bourgès C, Masunaga H, Sasaki S, Tsukagoshi K, Mori T, Sirringhaus H, Nishihara H. Lateral Heterometal Junction Rectifier Fabricated by Sequential Transmetallation of Coordination Nanosheet. Angew Chem Int Ed Engl 2024; 63:e202318181. [PMID: 38179847 DOI: 10.1002/anie.202318181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2023] [Revised: 12/22/2023] [Accepted: 01/03/2024] [Indexed: 01/06/2024]
Abstract
Heterostructures of two-dimensional materials realise novel and enhanced physical phenomena, making them attractive research targets. Compared to inorganic materials, coordination nanosheets have virtually infinite combinations, leading to tunability of physical properties and are promising candidates for heterostructure fabrication. Although stacking of coordination materials into vertical heterostructures is widely reported, reports of lateral coordination material heterostructures are few. Here we show the successful fabrication of a seamless lateral heterojunction showing diode behaviour, by sequential and spatially limited immersion of a new metalladithiolene coordination nanosheet, Zn3 BHT, into aqueous Cu(II) and Fe(II) solutions. Upon immersion, the Zn centres in insulating Zn3 BHT are replaced by Cu or Fe ions, resulting in conductivity. The transmetallation is spatially confined, occurring only within the immersed area. We anticipate that our results will be a starting point towards exploring transmetallation of various two-dimensional materials to produce lateral heterojunctions, by providing a new and facile synthetic route.
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Affiliation(s)
- Choon Meng Tan
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
| | - Naoya Fukui
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
| | - Kenji Takada
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
| | - Hiroaki Maeda
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
| | - Ekaterina Selezneva
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
- WPI International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, 305-0044, Japan
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Cédric Bourgès
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Namiki, Tsukuba, 305-0044, Japan
| | - Hiroyasu Masunaga
- Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198, (Japan)
| | - Sono Sasaki
- Faculty of Fiber Science and Engineering, Kyoto Institute of Technology, 1 Matsugasaki Hashikami-cho, Sakyo-ku, Kyoto 606-8585, Japan
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
| | - Kazuhito Tsukagoshi
- WPI International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, 305-0044, Japan
| | - Takao Mori
- WPI International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, 305-0044, Japan
| | - Henning Sirringhaus
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Hiroshi Nishihara
- Research Institute for Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278 8510, Japan
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Nag R, Saha R, Layek RK, Bera A. Atomically thin MXene/WSe 2Schottky heterojunction towards enhanced photogenerated charge carrier. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:135703. [PMID: 38113646 DOI: 10.1088/1361-648x/ad172e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Accepted: 12/19/2023] [Indexed: 12/21/2023]
Abstract
Two-dimensional materials garner increasing interest in next-generation electronics and optoelectronic devices due to their atomic-thin nature and distinctive physical properties. Building on these advances, we present the successful synthesis of a heterostructure composed of the semi-metallic Ti3C2-MXene and the semiconducting WSe2, in which the atomic layers are vertically aligned. The wet impregnation method effectively synthesizes an atomically thin Ti3C2-MXene/WSe2heterostructure characterized by atomic force microscopy, Raman and time-resolved photoluminescence (TRPL) analysis. In addition, the current-voltage characteristics at the heterostructure reveal the Schottky junction probed by the scanning tunnelling microscopy and the conductive atomic force microscopy tip. The Schottky heterojunction also exhibits enhanced photocatalytic properties by improving the photogenerated charge carriers and inhibiting recombination. This work demonstrates the unique 2D-2D Ti3C2-MXene/WSe2vertical heterojunction possesses superior photon trapping ability and can efficiently transport photogenerated charge carriers to the reaction sites to enhance photocatalysis performance.
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Affiliation(s)
- Riya Nag
- Department of Physics, Midnapore College (Autonomous), Raja Bazar Main Rd, 721101 Midnapore, India
| | - Raima Saha
- Department of Physics, Midnapore College (Autonomous), Raja Bazar Main Rd, 721101 Midnapore, India
| | - Rama Kanta Layek
- School of Engineering Science, Department of Separation Science, LUT University, FI-15210 Lahti, Finland
| | - Abhijit Bera
- Department of Physics, Midnapore College (Autonomous), Raja Bazar Main Rd, 721101 Midnapore, India
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6
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Zulkifli N'AA, Zahir NH, Abdullah Ripain AH, Said SM, Zakaria R. Sulfurization engineering of single-zone CVD vertical and horizontal MoS 2 on p-GaN heterostructures for self-powered UV photodetectors. NANOSCALE ADVANCES 2023; 5:879-892. [PMID: 36756501 PMCID: PMC9890942 DOI: 10.1039/d2na00756h] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/29/2022] [Accepted: 12/26/2022] [Indexed: 06/18/2023]
Abstract
Molybdenum disulfide (MoS2) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS2 on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zone CVD of a Mo seed layer via E-beam evaporation. Tuning the sulfurization parameters, namely temperature and duration, has been discovered to be an effective strategy for improving MoS2 orientation (horizontally aligned and vertically aligned) and quality, which affects photodetector (PD) performance. The increase in the sulfurization temperature to 850 °C results in improved structural quality and crystallite size. However, a prolonged sulfurization duration of 60 minutes caused the degradation of the film quality. The close lattice match between p-GaN and MoS2 contributes to the excellent quality growth of deposited MoS2. Following this, an n-MoS2/p-GaN heterostructure PD was successfully built by a MoS2 position-selectivity method. We report a highly sensitive and self-powered GaN/MoS2 p-n heterojunction PD with a relatively high responsivity of 14.3 A W-1, a high specific detectivity of 1.12 × 1013 Jones, and a fast response speed of 8.3/13.4 μs (20 kHz) under a UV light of 355 nm at zero-bias voltage. Our PD exhibits superior performance to that of the previously reported MoS2/GaN p-n PD. Our findings suggest a more efficient and straightforward approach to building high-performance self-powered UV PDs.
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Affiliation(s)
| | - Nor Hilmi Zahir
- Low Dimensional Material Research Center (LDMRC), Physics Dept. Faculty of Science, University Malaya 50603 Kuala Lumpur Malaysia
| | | | - Suhana Mohd Said
- Department of Electrical Engineering, Faculty of Engineering, University of Malaya 50603 Kuala Lumpur Malaysia
| | - Rozalina Zakaria
- Photonic Research Centre, University Malaya 50603 Kuala Lumpur Malaysia
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7
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Acar M, Ertuğrul M, Gür E. Transfer-free, scalable vertical heterostructure FET on MoS 2/WS 2continuous films. NANOTECHNOLOGY 2022; 33:475201. [PMID: 35970141 DOI: 10.1088/1361-6528/ac8997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Accepted: 08/14/2022] [Indexed: 06/15/2023]
Abstract
Taking into account the novel layered structure and unusual electronic properties of MoS2and WS2on the side the lack of dangling bonds between these two components and donor-acceptor linkage effects, growth of the MoS2/WS2vertical heterojunction film on the amorphous SiO2/Si substrate have created high demand. In this study, we reported the continuous, scalable, and vertical MoS2/WS2heterostructure film by using a sputtering without a transfer step. The WS2film was continuously grown on MoS2and eventually led to the formation of the MoS2/WS2vertical heterojunction film. Dozens of FETs fabricated on MoS2/WS2continuous heterojunction film were created on the same substrate in a single lithographic fabrication step, allowing them to be commercialized and not only used in research applications. RAMAN spectra proved the formation of the MoS2/WS2heterostructure film. In XPS measurements, it was shown that a separate MoS2and WS2layer was grown instead of the alloy structure. The polarity behavior of the MoS2/WS2heterostructure FET was found to be modulated with different drain voltages as p-type to ambipolar and finally n-type conductivity because of the transition of band structure and Schottky barrier heights at different drain voltages. Electron mobility (7.2 cm2V.s-1) and on/off ratio (104-105) exhibited by the MoS2/WS2heterostructure FETs displayed a more improved electrical performance than that of individual WS2, MoS2devices. It was observed that the mobility value of MoS2/WS2FET was approximately 514 times greater than WS2FET and 800 times greater than MoS2FET. Additionally, the MoS2/WS2FET on/off ratio was larger than 2 order MoS2FET and 1 order WS2FET. The film of continuous vertical heterojunctions as in the MoS2/WS2currents in the study would be a promising candidate for nanoelectronics fields. This work demonstrated the progress towards realizing carrier-type controlled high-performance MoS2/WS2heterojunction-based FETs for future logic devices.
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Affiliation(s)
- Merve Acar
- Department of Electrical and Electronics Engineering, Faculty of Engineering, Atatürk University, 25240, Erzurum, Turkey
| | - Mehmet Ertuğrul
- Department of Electrical and Electronics Engineering, Faculty of Engineering, Atatürk University, 25240, Erzurum, Turkey
- Department of Nanoscience and Nanotechnology, Graduate School of Natural and Applied Sciences, Ataturk University, 25240 Erzurum, Turkey
| | - Emre Gür
- Department of Nanoscience and Nanotechnology, Graduate School of Natural and Applied Sciences, Ataturk University, 25240 Erzurum, Turkey
- Department of Physics, Faculty of Science, Atatürk University, 25240, Erzurum, Turkey
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8
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Yang S, Luo P, Wang F, Liu T, Zhao Y, Ma Y, Li H, Zhai T. Van der Waals Epitaxy of Bi 2 Te 2 Se/Bi 2 O 2 Se Vertical Heterojunction for High Performance Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105211. [PMID: 34850539 DOI: 10.1002/smll.202105211] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2021] [Revised: 10/18/2021] [Indexed: 06/13/2023]
Abstract
Bismuth oxyselenide (Bi2 O2 Se) has emerged as a promising candidate for electronic and optoelectronic applications due to its outstanding electron mobility and ambient stability. However, high dark current and relatively slow photoresponse that originate from high charge carrier concentration as well as bolometric effect in Bi2 O2 Se inhibit further improvement of Bi2 O2 Se based photodetectors. Here, a one-step van der Waals (vdW) epitaxy synthesis of Bi2 Te2 Se/Bi2 O2 Se vertical heterojunction with type-II band alignment and high-quality interface is demonstrated. The crystal quality and uniformity of the heterojunction are supported by Raman, transmission electron microscopy and energy dispersive spectroscopy results. A photodetector based on Bi2 Te2 Se/Bi2 O2 Se heterojunction demonstrates steady photoresponse over a large wavelength range (532-1456 nm), with a high specific responsivity of 2.21 × 103 A W-1 at 532 nm and fast response speed of 50 ms. Moreover, field effect regulation allows for further improvement of the photoresponse performance of the heterojunction field effect transistor device, where the responsivity can be increased to 3.34 × 103 A W-1 with a 60 V gate voltage. Overall, the one-step vdW epitaxy process is a promising and convenient route towards constructing high quality Bi2 O2 Se based heterojunction for improving its photodetection performance.
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Affiliation(s)
- Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ying Ma
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Garg S, Fix JP, Krayev AV, Flanery C, Colgrove M, Sulkanen AR, Wang M, Liu GY, Borys NJ, Kung P. Nanoscale Raman Characterization of a 2D Semiconductor Lateral Heterostructure Interface. ACS NANO 2022; 16:340-350. [PMID: 34936762 DOI: 10.1021/acsnano.1c06595] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The nature of the interface in lateral heterostructures of 2D monolayer semiconductors including its composition, size, and heterogeneity critically impacts the functionalities it engenders on the 2D system for next-generation optoelectronics. Here, we use tip-enhanced Raman scattering (TERS) to characterize the interface in a single-layer MoS2/WS2 lateral heterostructure with a spatial resolution of 50 nm. Resonant and nonresonant TERS spectroscopies reveal that the interface is alloyed with a size that varies over an order of magnitude─from 50 to 600 nm─within a single crystallite. Nanoscale imaging of the continuous interfacial evolution of the resonant and nonresonant Raman spectra enables the deconvolution of defect activation, resonant enhancement, and material composition for several vibrational modes in single-layer MoS2, MoxW1-xS2, and WS2. The results demonstrate the capabilities of nanoscale TERS spectroscopy to elucidate macroscopic structure-property relationships in 2D materials and to characterize lateral interfaces of 2D systems on length scales that are imperative for devices.
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Affiliation(s)
- Sourav Garg
- Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
| | - J Pierce Fix
- Department of Physics, Montana State University, Bozeman, Montana 59717, United States
| | | | - Connor Flanery
- Department of Physics, Montana State University, Bozeman, Montana 59717, United States
| | - Michael Colgrove
- Department of Physics, Montana State University, Bozeman, Montana 59717, United States
| | - Audrey R Sulkanen
- Department of Chemistry, University of California Davis, Davis, California 95616, United States
| | - Minyuan Wang
- Department of Chemistry, University of California Davis, Davis, California 95616, United States
| | - Gang-Yu Liu
- Department of Chemistry, University of California Davis, Davis, California 95616, United States
| | - Nicholas J Borys
- Department of Physics, Montana State University, Bozeman, Montana 59717, United States
| | - Patrick Kung
- Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
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10
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Wang W, Jiang H, Li L, Li G. Two-dimensional group-III nitrides and devices: a critical review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:086501. [PMID: 34229312 DOI: 10.1088/1361-6633/ac11c4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2021] [Accepted: 07/06/2021] [Indexed: 06/13/2023]
Abstract
As third-generation semiconductors, group-III nitrides are promising for high power electronic and optoelectronic devices because of their wide bandgap, high electron saturation mobility, and other unique properties. Inspired by the thickness-dependent properties of two-dimensional (2D) materials represented by graphene, it is predicted that the 2D counterparts of group-III nitrides would have similar properties. However, the preparation of 2D group-III nitride-based materials and devices is limited by the large lattice mismatch in heteroepitaxy and the low rate of lateral migration, as well as the unsaturated dangling bonds on the surfaces of group-III nitrides. The present review focuses on theoretical and experimental studies on 2D group-III nitride materials and devices. Various properties of 2D group-III nitrides determined using simulations and theoretical calculations are outlined. Moreover, the breakthroughs in their synthesis methods and their underlying physical mechanisms are detailed. Furthermore, devices based on 2D group-III nitrides are discussed accordingly. Based on recent progress, the prospect for the further development of the 2D group-III nitride materials and devices is speculated. This review provides a comprehensive understanding of 2D group-III nitride materials, aiming to promote the further development of the related fields of nano-electronic and nano-optoelectronics.
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Affiliation(s)
- Wenliang Wang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong Special Administrative Region of China
| | - Hongsheng Jiang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Linhao Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
| | - Guoqiang Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, Guangdong 510640, People's Republic of China
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Chahal S, Ranjan P, Motlag M, Yamijala SSRKC, Late DJ, Sadki EHS, Cheng GJ, Kumar P. Borophene via Micromechanical Exfoliation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102039. [PMID: 34270846 DOI: 10.1002/adma.202102039] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2021] [Revised: 04/19/2021] [Indexed: 05/09/2023]
Abstract
Borophene, the lightest among all Xenes, possesses extreme electronic mobility along with high carrier density and high Young's modulus. To accomplish device-quality borophene, novel approaches of realization of monolayers need to be urgently explored. In this work, micromechanical exfoliation is discovered to result in mono- and few-layered borophene of device quality. Borophene sheets are successfully fabricated down to monolayer thickness. Distinct crystallographic phases of borophene viz. XRD study reveals crystallographic phase transition from rhombohedral to several other eigen phases of borophene. The role of the destination substrates is held crucial in determining the final phase of the transferred sheet. The exfoliation energy is calculated by density functional theory. Molecular dynamics simulations are used to simulate the exfoliation process. Heterolayers of borophene, with black phosphorene (BP) or with molybdenum disulfide (MoS2 ) atomic sheets, are found to result in photoexcited coupling quantum states. Gold-coated borophene bestows promising anchoring capability for surface-enhanced Raman spectroscopy (SERS). Successful demonstration of the electronic behavior of micromechanically exfoliated borophene and excitonic behavior of borophene-based heterolayers will guide future generation devices not only in electronics and excitonics, but also in thermal management, electronic packaging, hydrogen storage, hybrid energy storage, and clean energy solutions.
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Affiliation(s)
- Sumit Chahal
- Department of Physics, Indian Institute of Technology Patna, Patna, Bihar, 801106, India
| | - Pranay Ranjan
- Department of Physics, Indian Institute of Technology Patna, Patna, Bihar, 801106, India
- Department of Physics, College of Science, United Arab Emirates University, Al-Ain, UAE
| | - Maithili Motlag
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | | | - Dattatreya J Late
- Centre for Nanoscience and Nanotechnology, Amity University Mumbai, Mumbai, Maharashtra, 410206, India
| | - El Hadi S Sadki
- Department of Physics, College of Science, United Arab Emirates University, Al-Ain, UAE
| | - Gary J Cheng
- School of Industrial Engineering, Purdue University, West Lafayette, IN, 47907, USA
- School of Materials Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Birck Nanotechnology Centre, Purdue University, West Lafayette, IN, 47907, USA
| | - Prashant Kumar
- Department of Physics, Indian Institute of Technology Patna, Patna, Bihar, 801106, India
- Birck Nanotechnology Centre, Purdue University, West Lafayette, IN, 47907, USA
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12
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Swain G, Sultana S, Parida K. A review on vertical and lateral heterostructures of semiconducting 2D-MoS 2 with other 2D materials: a feasible perspective for energy conversion. NANOSCALE 2021; 13:9908-9944. [PMID: 34038496 DOI: 10.1039/d1nr00931a] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Fossil fuels as a double-edged sword are essential to daily life. However, the depletion of fossil fuel reservoirs has increased the search for alternative renewable energy sources to procure a more sustainable society. Accordingly, energy production through water splitting, CO2 reduction and N2 reduction via photocatalytic and electrocatalytic pathways is being contemplated as a greener methodology with zero environmental pollution. Owing to their atomic-level thickness, two-dimensional (2D) semiconductor catalysts have triggered the reawakening of interest in the field of energy and environmental applications. Among them, following the unconventional properties of graphene, 2D MoS2 has been widely investigated due to its outstanding optical and electronic properties. However, the photo/electrocatalytic performance of 2D-MoS2 is still unsatisfactory due to its low charge carrier density. Recently, the development of 2D/2D heterojunctions has evoked interdisciplinary research fascination in the scientific community, which can mitigate the shortcomings associated with 2D-MoS2. Following the recent research trends, the present review covers the recent findings and key aspects on the synthetic methods, fundamental properties and practical applications of semiconducting 2D-MoS2 and its heterostructures with other 2D materials such as g-C3N4, graphene, CdS, TiO2, MXene, black phosphorous, and boron nitride. Besides, this review details the viable application of these materials in the area of hydrogen energy production via the H2O splitting reaction, N2 fixation to NH3 formation and CO2 reduction to different value-added hydrocarbons and alcohol products through both photocatalysis and electrocatalysis. The crucial role of the interface together with the charge separation principle between two individual 2D structures towards achieving satisfactory activity for various applications is presented. Overall, the current studies provide a snapshot of the recent breakthroughs in the development of various 2D/2D-based catalysts in the field of energy production, delivering opportunities for future research.
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Affiliation(s)
- Gayatri Swain
- Centre for Nanoscience and Nanotechnology, Siksha 'O' Anusandhan (Deemed to be University), Jagamohan Nagar, Jagamara, Bhubaneswar-751030, Odisha, India.
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13
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Lv L, Yu J, Hu M, Yin S, Zhuge F, Ma Y, Zhai T. Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics. NANOSCALE 2021; 13:6713-6751. [PMID: 33885475 DOI: 10.1039/d1nr00318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.
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Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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14
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Sattar A, Moazzam U, Bashir AI, Reza A, Latif H, Usman A, Amjad RJ, Mubshrah A, Nasir A. Proposal of graphene band-gap enhancement via heterostructure of graphene with boron nitride in vertical stacking scheme. NANOTECHNOLOGY 2021; 32:225705. [PMID: 33601353 DOI: 10.1088/1361-6528/abe789] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2020] [Accepted: 02/18/2021] [Indexed: 06/12/2023]
Abstract
Since the discovery of graphene and other two-dimensional (2D) materials in recent years, heterostructures composed of multilayered 2D materials have attracted immense research interest. This is mainly due to the potential prospects of the heterostructures for basic and applied applications related to the emerging technology of energy-efficient optoelectronic devices. In particular, heterostructures of graphene with 2D materials of similar structure have been proposed to open up the band gap to tune the transport properties of graphene for a variety of technological applications. In this paper, we propose a heterostructure scheme of band-gap engineering and modification of the electronic band structure of graphene via the heterostructure of graphene-boron nitride (GBN) based on first-principles calculations. For a comparative analysis of the properties of the proposed GBN heterostructure, we employ Kohn-Sham density functional theory (DFT) using local density and generalized gradient approximations within Perdew-Burke-Ernzehof parameterization. To account for weak interlayer van der Waals interactions, we employ the semi-empirical dispersion-corrected DFT scheme of Grimme, called the DFT-D2 approximation. In the vertical stacking arrangement of boron-nitride-doped graphene with hexagonal boron nitride, we predict a band-gap opening of 1.12 eV which, to our knowledge, is the largest value attained for this kind of system. The impact of interlayer spacing on the band-gap opening arising from the interlayer coupling effect is also analyzed. The band-gap enhancement supports the widely proposed promise of GBN heterostructure in design of high-performance optoelectronic devices such as field-effect transistors for potential applications.
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Affiliation(s)
- Abdul Sattar
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Uzair Moazzam
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Azmat Iqbal Bashir
- Faculty of Engineering and Applied Sciences, Department of Physics, Riphah International University Islamabad, Pakistan
| | - Ali Reza
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Hamid Latif
- Department of Physics Forman Christian College University, Lahore, Pakistan
| | - Arslan Usman
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
- Faculty of Physics and Materials Sciences Centre, Philipps-Universität Marburg-35032 Marburg, Germany
| | - Raja Junaid Amjad
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Ayesha Mubshrah
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
| | - Abdullah Nasir
- Department of Physics, COMSATS University Islamabad, Lahore Campus, Pakistan
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15
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Gbadamasi S, Mohiuddin M, Krishnamurthi V, Verma R, Khan MW, Pathak S, Kalantar-Zadeh K, Mahmood N. Interface chemistry of two-dimensional heterostructures - fundamentals to applications. Chem Soc Rev 2021; 50:4684-4729. [PMID: 33621294 DOI: 10.1039/d0cs01070g] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.
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16
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Zhu X, He J, Zhang R, Cong C, Zheng Y, Zhang H, Zhang S, Chen L. Effects of dielectric screening on the excitonic and critical points properties of WS 2/MoS 2 heterostructures. NANOSCALE 2020; 12:23732-23739. [PMID: 33231235 DOI: 10.1039/d0nr04591h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Vertical van der Waals heterostructures have aroused great attention for their promising application in next-generation nanoelectronic and optoelectronic devices. The dielectric screening effect plays a key role in the properties of two-dimensional (2D) heterostructures. Here, we studied the dielectric screening effects on the excitonic properties and critical points (CPs) of the WS2/MoS2 heterostructure using spectroscopic ellipsometry (SE). Owing to the type-II band alignment of the WS2/MoS2 heterostructure, charged carriers spatially separated and created an interlayer exciton, and the transition energy and binding energy have been accurately found to be 1.58 ± 0.050 eV and 431.39 ± 127.818 meV by SE, respectively. We found that stacking the WS2/MoS2 vertical heterostructure increases the effective dielectric screening compared with the monolayer counterparts. The increased effective dielectric screening in the WS2/MoS2 heterostructure weakens the long-range Coulomb force between electrons and holes. Consequently, the quasi-particle band gap and the exciton binding energies are reduced, and because of the orbital overlap, more CPs are produced in the WS2/MoS2 heterostructure in the high photon energy range. Our results not only shed light on the interpretation of recent first-principles studies, but also provide important physical support for improving the performance of heterostructure-based optoelectronic devices with tunable functionalities.
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Affiliation(s)
- Xudan Zhu
- Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, School of Information Science and Engineering, Fudan University, Shanghai 200433, China.
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17
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Shit SC, Shown I, Paul R, Chen KH, Mondal J, Chen LC. Integrated nano-architectured photocatalysts for photochemical CO 2 reduction. NANOSCALE 2020; 12:23301-23332. [PMID: 33107552 DOI: 10.1039/d0nr05884j] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent advances in nanotechnology, especially the development of integrated nanostructured materials, have offered unprecedented opportunities for photocatalytic CO2 reduction. Compared to bulk semiconductor photocatalysts, most of these nanostructured photocatalysts offer at least one advantage in areas such as photogenerated carrier kinetics, light absorption, and active surface area, supporting improved photochemical reaction efficiencies. In this review, we briefly cover the cutting-edge research activities in the area of integrated nanostructured catalysts for photochemical CO2 reduction, including aqueous and gas-phase reactions. Primarily explored are the basic principles of tailor-made nanostructured composite photocatalysts and how nanostructuring influences photochemical performance. Specifically, we summarize the recent developments related to integrated nanostructured materials for photocatalytic CO2 reduction, mainly in the following five categories: carbon-based nano-architectures, metal-organic frameworks, covalent-organic frameworks, conjugated porous polymers, and layered double hydroxide-based inorganic hybrids. Besides the technical aspects of nanostructure-enhanced catalytic performance in photochemical CO2 reduction, some future research trends and promising strategies are addressed.
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Affiliation(s)
- Subhash Chandra Shit
- Catalysis & Fine Chemicals Division, CSIR-Indian Institute of Chemical Technology, Uppal Road, Hyderabad 500007, India.
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18
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Nazir G, Rehman A, Park SJ. Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities. ACS APPLIED MATERIALS & INTERFACES 2020; 12:47127-47163. [PMID: 32914955 DOI: 10.1021/acsami.0c10213] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Conventional field-effect transistors (FETs) have long been considered a fundamental electronic component for a diverse range of devices. However, nanoelectronic circuits based on FETs are not energy efficient because they require a large supply voltage for switching applications. To reduce the supply voltage in standard FETs, which is hampered by the 60 mV/decade limit established by the subthreshold swing (SS), a new class of FETs have been designed, tunnel FETs (TFETs). A TFET utilizes charge-carrier transportation in device channels using quantum mechanical based band-to-band tunneling despite of conventional thermal injection. The TFETs fabricated with thin semiconducting film or nanowires can attain a 100-fold power drop compared to complementary metal-oxide-semiconductor (CMOS) transistors. As a result, the use of TFETs and CMOS technology together could ameliorate integrated circuits for low-power devices. The discovery of two-dimensional (2D) materials with a diverse range of electronic properties has also opened new gateways for condensed matter physics, nanotechnology, and material science, thus potentially improving TFET-based devices in terms of device design and performance. In this review, state-of-art TFET devices exhibiting different semiconducting channels and geometries are comprehensively reviewed followed by a brief discussion of the challenges that remain for the development of high-performance devices. Lastly, future prospects are presented for the improvement of device design and the working efficiency of TFETs.
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Affiliation(s)
- Ghazanfar Nazir
- Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
| | - Adeela Rehman
- Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
| | - Soo-Jin Park
- Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
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19
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Abstract
The advanced electrochemical properties, such as high energy density, fast charge–discharge rates, excellent cyclic stability, and specific capacitance, make supercapacitor a fascinating electronic device. During recent decades, a significant amount of research has been dedicated to enhancing the electrochemical performance of the supercapacitors through the development of novel electrode materials. In addition to highlighting the charge storage mechanism of the three main categories of supercapacitors, including the electric double-layer capacitors (EDLCs), pseudocapacitors, and the hybrid supercapacitors, this review describes the insights of the recent electrode materials (including, carbon-based materials, metal oxide/hydroxide-based materials, and conducting polymer-based materials, 2D materials). The nanocomposites offer larger SSA, shorter ion/electron diffusion paths, thus improving the specific capacitance of supercapacitors (SCs). Besides, the incorporation of the redox-active small molecules and bio-derived functional groups displayed a significant effect on the electrochemical properties of electrode materials. These advanced properties provide a vast range of potential for the electrode materials to be utilized in different applications such as in wearable/portable/electronic devices such as all-solid-state supercapacitors, transparent/flexible supercapacitors, and asymmetric hybrid supercapacitors.
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20
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Huang Z, Liu Y, Dini K, Tan Q, Liu Z, Fang H, Liu J, Liew T, Gao W. Robust Room Temperature Valley Hall Effect of Interlayer Excitons. NANO LETTERS 2020; 20:1345-1351. [PMID: 31889447 DOI: 10.1021/acs.nanolett.9b04836] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The Berry curvature in the band structure of transition metal dichalcogenides (TMDs) introduces a valley-dependent effective magnetic field, which induces the valley Hall effect (VHE). Similar to the ordinary Hall effect, the VHE spatially separates carriers or excitons, depending on their valley index, and accumulates them at opposite sample edges. The VHE can play a key role in valleytronic devices, but previous observations of the VHE have been limited to cryogenic temperatures. Here, we report a demonstration of the VHE of interlayer excitons in a MoS2/WSe2 heterostructure at room temperature. We monitored the in-plane propagation of interlayer excitons through photoluminescence mapping and observed their spatial separation into two opposite transverse directions that depended on the valley index of the excitons. Our theoretical simulations reproduced the salient features of these observations. Our demonstration of the robust interlayer exciton VHE at room temperature, enabled by their intrinsically long lifetimes, will open up realistic possibilities for the development of opto-valleytronic devices based on TMD heterostructures.
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Affiliation(s)
- Zumeng Huang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 639798 Singapore
| | - Yuanda Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 639798 Singapore
| | - Kévin Dini
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 639798 Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 639798 Singapore
| | - Zhuojun Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics , Sun Yat-sen University , Guangzhou 510275 , China
| | - Hanlin Fang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics , Sun Yat-sen University , Guangzhou 510275 , China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics , Sun Yat-sen University , Guangzhou 510275 , China
| | - Timothy Liew
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 639798 Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences , Nanyang Technological University , 639798 Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies , Nanyang Technological University , 639798 Singapore
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21
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Liu Y, Fang H, Rasmita A, Zhou Y, Li J, Yu T, Xiong Q, Zheludev N, Liu J, Gao W. Room temperature nanocavity laser with interlayer excitons in 2D heterostructures. SCIENCE ADVANCES 2019; 5:eaav4506. [PMID: 31032409 PMCID: PMC6486267 DOI: 10.1126/sciadv.aav4506] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2018] [Accepted: 03/07/2019] [Indexed: 05/22/2023]
Abstract
Atomically thin layered two-dimensional (2D) materials have provided a rich library for both fundamental research and device applications. Bandgap engineering and controlled material response can be achieved from artificial heterostructures. Recently, excitonic lasers have been reported using transition metal dichalcogenides; however, the emission is still the intrinsic energy bandgap of the monolayers. Here, we report a room temperature interlayer exciton laser with MoS2/WSe2 heterostructures. The onset of lasing was identified by the distinct kink in the "L-L" curve and the noticeable spectral linewidth collapse. Different from visible emission of intralayer excitons in monolayer components, our laser works in the infrared range, which is fully compatible with the well-established technologies in silicon photonics. Long lifetime of interlayer excitons relaxes the requirement of the cavity quality factor by orders of magnitude. Room temperature interlayer exciton lasers might open new perspectives for developing coherent light sources with tailored optical properties on silicon photonics platforms.
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Affiliation(s)
- Yuanda Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore
| | - Hanlin Fang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Abdullah Rasmita
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Yu Zhou
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Juntao Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Ting Yu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Qihua Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Nikolay Zheludev
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
- Corresponding author. (N.Z.); (J. Liu); (W.G.)
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Corresponding author. (N.Z.); (J. Liu); (W.G.)
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore
- Corresponding author. (N.Z.); (J. Liu); (W.G.)
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22
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Kim JH, Ko TJ, Okogbue E, Han SS, Shawkat MS, Kaium MG, Oh KH, Chung HS, Jung Y. Centimeter-scale Green Integration of Layer-by-Layer 2D TMD vdW Heterostructures on Arbitrary Substrates by Water-Assisted Layer Transfer. Sci Rep 2019; 9:1641. [PMID: 30733454 PMCID: PMC6367468 DOI: 10.1038/s41598-018-37219-w] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2018] [Accepted: 12/04/2018] [Indexed: 11/12/2022] Open
Abstract
Two-dimensional (2D) transition metal dichalcogenide (2D TMD) layers present an unusually ideal combination of excellent opto-electrical properties and mechanical tolerance projecting high promise for a wide range of emerging applications, particularly in flexible and stretchable devices. The prerequisite for realizing such opportunities is to reliably integrate large-area 2D TMDs of well-defined dimensions on mechanically pliable materials with targeted functionalities by transferring them from rigid growth substrates. Conventional approaches to overcome this challenge have been limited as they often suffer from the non-scalable integration of 2D TMDs whose structural and chemical integrity are altered through toxic chemicals-involved processes. Herein, we report a generic and reliable strategy to achieve the layer-by-layer integration of large-area 2D TMDs and their heterostructure variations onto a variety of unconventional substrates. This new 2D layer integration method employs water only without involving any other chemicals, thus renders distinguishable advantages over conventional approaches in terms of material property preservation and integration size scalability. We have demonstrated the generality of this method by integrating a variety of 2D TMDs and their heterogeneously-assembled vertical layers on exotic substrates such as plastics and papers. Moreover, we have verified its technological versatility by demonstrating centimeter-scale 2D TMDs-based flexible photodetectors and pressure sensors which are difficult to fabricate with conventional approaches. Fundamental principles for the water-assisted spontaneous separation of 2D TMD layers are also discussed.
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Affiliation(s)
- Jung Han Kim
- NanoScience Technology Center, University of Central Florida, Orlando, Florida, 32826, USA
| | - Tae-Jun Ko
- NanoScience Technology Center, University of Central Florida, Orlando, Florida, 32826, USA
| | - Emmanuel Okogbue
- NanoScience Technology Center, University of Central Florida, Orlando, Florida, 32826, USA
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida, 32816, USA
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida, 32826, USA
- Department of Material Science and Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Mashiyat Sumaiya Shawkat
- NanoScience Technology Center, University of Central Florida, Orlando, Florida, 32826, USA
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida, 32816, USA
| | - Md Golam Kaium
- NanoScience Technology Center, University of Central Florida, Orlando, Florida, 32826, USA
| | - Kyu Hwan Oh
- Department of Material Science and Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute, Jeonju, 54907, South Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida, 32826, USA.
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida, 32816, USA.
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida, 32826, USA.
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23
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Patel AB, Machhi HK, Chauhan P, Narayan S, Dixit V, Soni SS, Jha PK, Solanki GK, Patel KD, Pathak VM. Electrophoretically Deposited MoSe 2/WSe 2 Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4093-4102. [PMID: 30605298 DOI: 10.1021/acsami.8b18177] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The solar response ability and low-cost fabrication of the photoanode are important factors for the effective output of the photoelectrochemical system. Modification of the photoanode by which its ability to absorb irradiation can be manipulated has gained tremendous attention. Here, we demonstrated the MoSe2, WSe2, and MoSe2/WSe2 nanocrystal thin films prepared by the liquid-phase exfoliated and electrophoresis methods. Atomic force microscopy and high-resolution transmission electron microscopy show that the liquid exfoliated nanocrystals have a few layered dimensions with good crystallinity. Scanning electron microscopy demonstrated uniform distribution and randomly oriented nanocrystals, having a homogeneous shape and size. X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectra confirm the equal contribution of MoSe2 and WSe2 nanocrystals in the formation of the MoSe2/WSe2 heterojunction. Because of superior absorption of MoSe2/WSe2 heterojunction in the visible region and type-II heterojunction band alignment, in situ measurement of heterojunction electrode shows almost 1.5 times incident photo-to-current conversion efficiency and photoresponsivity in comparison to individual material electrodes. Our result clearly indicates the influence of heterojunction formation between liquid exfoliated nanocrystals on effective separation of photogenerated exciton and enhances charge carrier transfer, which leads to the improvement in photoelectrochemical performance. Liquid exfoliated nanosheet-based heterojunction is attractive as efficient photoanodes for the photoelectrochemical systems.
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Affiliation(s)
| | | | | | - Som Narayan
- Department of Physics , The M. S. University of Baroda , Vadodara 390002 , Gujarat , India
| | | | | | - Prafulla K Jha
- Department of Physics , The M. S. University of Baroda , Vadodara 390002 , Gujarat , India
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Kim Y, Kwon S, Seo EJ, Nam JH, Jang HY, Kwon SH, Kwon JD, Kim DW, Cho B. Facile Fabrication of a Two-Dimensional TMD/Si Heterojunction Photodiode by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2018; 10:36136-36143. [PMID: 30261138 DOI: 10.1021/acsami.8b12896] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A growth technique to directly prepare two-dimensional (2D) materials onto conventional semiconductor substrates, enabling low-temperature, high-throughput, and large-area capability, is needed to realize competitive 2D transition-metal dichalcogenide (TMD)/three-dimensional (3D) semiconductor heterojunction devices. Therefore, we herein successfully developed an atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique, which could grow MoS2 and WS2 multilayers directly onto PET flexible substrate as well as 4-in. Si substrates at temperatures of <200 °C. The as-fabricated MoS2/Si and WS2/Si heterojunctions exhibited large and fast photocurrent responses under illumination of a green light. The measured photocurrent was linearly proportional to the laser power, indicating that trapping and detrapping of the photogenerated carriers at defect states could not significantly suppress the collection of photocarriers. All the results demonstrated that our AP-PECVD method could produce high-quality TMD/Si 2D-3D heterojunctions for optoelectronic applications.
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Affiliation(s)
- Yonghun Kim
- Materials Center for Energy Convergence, Surface Technology Division , Korea Institute of Material Science (KIMS) , 797 Changwondaero , Sungsan-gu, Changwon , Gyongnam 51508 , Republic of Korea
| | - Soyeong Kwon
- Department of Physics , Ewha Womans University , 52 Ewhayeodae-gil , Seodaemun-gu, Seoul 03760 , Republic of Korea
| | - Eun-Joo Seo
- Materials Center for Energy Convergence, Surface Technology Division , Korea Institute of Material Science (KIMS) , 797 Changwondaero , Sungsan-gu, Changwon , Gyongnam 51508 , Republic of Korea
| | - Jae Hyeon Nam
- Department of Advanced Material Engineering , Chungbuk National University , Chungdae-ro 1 , Seowon-gu, Cheongju , Chungbuk 28644 , Republic of Korea
| | - Hye Yeon Jang
- Department of Advanced Material Engineering , Chungbuk National University , Chungdae-ro 1 , Seowon-gu, Cheongju , Chungbuk 28644 , Republic of Korea
| | - Se-Hun Kwon
- School of Materials Science and Engineering , Pusan National University , 30 Jangjeon-dong , Geumjeong-gu, Busan 46241 , Republic of Korea
| | - Jung-Dae Kwon
- Materials Center for Energy Convergence, Surface Technology Division , Korea Institute of Material Science (KIMS) , 797 Changwondaero , Sungsan-gu, Changwon , Gyongnam 51508 , Republic of Korea
| | - Dong-Wook Kim
- Department of Physics , Ewha Womans University , 52 Ewhayeodae-gil , Seodaemun-gu, Seoul 03760 , Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering , Chungbuk National University , Chungdae-ro 1 , Seowon-gu, Cheongju , Chungbuk 28644 , Republic of Korea
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Muhabie AA, Ho CH, Gebeyehu BT, Huang SY, Chiu CW, Lai JY, Lee DJ, Cheng CC. Dynamic tungsten diselenide nanomaterials: supramolecular assembly-induced structural transition over exfoliated two-dimensional nanosheets. Chem Sci 2018; 9:5452-5460. [PMID: 30155235 PMCID: PMC6011224 DOI: 10.1039/c8sc01778f] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2018] [Accepted: 05/30/2018] [Indexed: 01/31/2023] Open
Abstract
Supramolecular polymers can easily control the lamellar microstructures on exfoliated tungsten diselenide nanosheets.
A simple and effective method for direct exfoliation of tungsten diselenide (WSe2) into few-layered nanosheets has been successfully developed by employing a low molecular weight adenine-functionalized supramolecular polymer (A-PPG). In this study, we discover A-PPG can self-assemble into a long-range, ordered lamellar microstructure on the surface of WSe2 due to the efficient non-covalent interactions between A-PPG and WSe2. Morphological and light scattering studies confirmed the dynamic self-assembly behavior of A-PPG has the capacity to efficiently manipulate the transition between contractile and extended lamellar microstructures on the surface of metallic 1T-phase and semiconducting 2H-phase WSe2 nanosheets, respectively. The extent of WSe2 exfoliation can be easily controlled by systematically adjusting the amount of A-PPG in the composites, to obtain nanocomposites with the desired functional characteristics. In addition, the resulting composites possess unique liquid–solid phase transition behavior and excellent thermoreversible properties, revealing the self-assembled lamellar structure of A-PPG functions as a critical factor to manipulate and tailor the physical properties of exfoliated WSe2. This newly developed method of producing exfoliated WSe2 provides a useful conceptual and potential framework for developing WSe2-based multifunctional nanocomposites to extend their application in solution-processed semiconductor devices.
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Affiliation(s)
- Adem Ali Muhabie
- Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan
| | - Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan .
| | - Belete Tewabe Gebeyehu
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan .
| | - Shan-You Huang
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan .
| | - Chih-Wei Chiu
- Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan
| | - Juin-Yih Lai
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan . .,Department of Chemical Engineering , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan.,R&D Center for Membrane Technology , Chung Yuan Christian University , Chungli , Taoyuan 32043 , Taiwan
| | - Duu-Jong Lee
- Department of Chemical Engineering , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan.,Department of Chemical Engineering , National Taiwan University , Taipei 10617 , Taiwan.,R&D Center for Membrane Technology , Chung Yuan Christian University , Chungli , Taoyuan 32043 , Taiwan
| | - Chih-Chia Cheng
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10607 , Taiwan .
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Rehman SU, Ding ZJ. Enhanced electronic and optical properties of three TMD heterobilayers. Phys Chem Chem Phys 2018; 20:16604-16614. [PMID: 29873344 DOI: 10.1039/c8cp02995d] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
The physical and chemical properties of monolayers can be tuned by selective combinations so as to be useful for device applications. Here we present a density functional theory study on the structural, electronic and optical properties of three transition metal dichalcogenide (TMD) heterobilayers, ZrS2/HfS2, ZrSe2/HfSe2 and SnS2/SnSe2. These heterobilayers are predicted to be energetically and dynamically stable structures. The band structure calculation result shows that ZrS2/HfS2, ZrSe2/HfSe2 and SnS2/SnSe2 heterobilayers are semiconductors with indirect band gaps. The efficient charge carrier separation in ZrS2/HfS2 and ZrSe2/HfSe2 heterobilayers indicates that they can be employed in energy harvesting devices. Contrary to the previous report on the ZrS2/HfS2 heterobilayer, we found it to have an intrinsic type-II band alignment which is required in p-n junction diodes and tunnel field effect transistors, and the same behavior was observed in ZrSe2/HfSe2 and SnS2/SnSe2 for the first time. The ZrS2/HfS2 and ZrSe2/HfSe2 heterobilayers reveal enhanced optical absorption both in the ultraviolet and visible regions as compared to their respective monolayers, whereas the parallel and perpendicular part of the optical absorption of the SnS2/SnSe2 heterobilayer revealed an anisotropic behavior; the perpendicular part is largely improved in the higher energy region, and the parallel part of the optical absorption is improved in the ultraviolet region.
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Affiliation(s)
- Shafiq Ur Rehman
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
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Pu J, Takenobu T. Monolayer Transition Metal Dichalcogenides as Light Sources. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707627. [PMID: 29900597 DOI: 10.1002/adma.201707627] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2017] [Revised: 02/21/2018] [Indexed: 05/25/2023]
Abstract
Reducing the dimensions of materials is one of the key approaches to discovering novel optical phenomena. The recent emergence of 2D transition metal dichalcogenides (TMDCs) has provided a promising platform for exploring new optoelectronic device applications, with their tunable electronic properties, structural controllability, and unique spin valley-coupled systems. This progress report provides an overview of recent advances in TMDC-based light-emitting devices discussed from several aspects in terms of device concepts, material designs, device fabrication, and their diverse functionalities. First, the advantages of TMDCs used in light-emitting devices and their possible functionalities are presented. Second, conventional approaches for fabricating TMDC light-emitting devices are emphasized, followed by introducing a newly established, versatile method for generating light emission in TMDCs. Third, current growing technologies for heterostructure fabrication, in which distinct TMDCs are vertically stacked or laterally stitched, are explained as a possible means for designing high-performance light-emitting devices. Finally, utilizing the topological features of TMDCs, the challenges for controlling circularly polarized light emission and its device applications are discussed from both theoretical and experimental points of view.
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Affiliation(s)
- Jiang Pu
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Taishi Takenobu
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
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Frisenda R, Molina-Mendoza AJ, Mueller T, Castellanos-Gomez A, van der Zant HSJ. Atomically thin p-n junctions based on two-dimensional materials. Chem Soc Rev 2018; 47:3339-3358. [PMID: 29683464 DOI: 10.1039/c7cs00880e] [Citation(s) in RCA: 94] [Impact Index Per Article: 15.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.
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Affiliation(s)
- Riccardo Frisenda
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Campus de Cantoblanco, E-28049 Madrid, Spain.
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Murthy AA, Stanev TK, Cain JD, Hao S, LaMountain T, Kim S, Speiser N, Watanabe K, Taniguchi T, Wolverton C, Stern NP, Dravid VP. Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts. NANO LETTERS 2018; 18:2990-2998. [PMID: 29678116 DOI: 10.1021/acs.nanolett.8b00444] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Understanding the electronic transport of monolayer transition metal dichalcogenides (TMDs) and their heterostructures is complicated by the difficulty in achieving electrical contacts that do not perturb the material. Typically, metal deposition on monolayer TMDs leads to hybridization between the TMD and the metal, which produces Schottky barriers at the metal/semiconductor interface. In this work, we apply the recently reported hexagonal boron nitride (h-BN) tunnel contact scheme to probe the junction characteristics of a lateral TMD heterostructure grown via chemical vapor deposition. We first measure the electronic properties across the junction before elucidating optoelectronic generation mechanisms via scanning photocurrent microscopy. We find that the rectification ratio measured using the encapsulated, tunnel contact scheme is almost 2 orders of magnitude smaller than that observed via conventional metal contact geometry, which implies that the metal/semiconductor Schottky barriers play large roles in this aspect. Furthermore, we find that both the photovoltaic as well as hot carrier generation effects are dominant mechanisms driving photoresponse, depending on the external biasing conditions. This work is the first time that this encapsulation scheme has been applied to lateral heterostructures and serves as a reference for future electronic measurements on this material. It also simultaneously serves as a framework to more accurately assess the electronic transport characteristics of 2D heterostructures and better inform future device architectures.
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Affiliation(s)
| | | | | | | | | | | | | | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
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30
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Zhang J, Xie W, Agiorgousis ML, Choe DH, Meunier V, Xu X, Zhao J, Zhang S. Quantum oscillation in carrier transport in two-dimensional junctions. NANOSCALE 2018; 10:7912-7917. [PMID: 29666851 DOI: 10.1039/c8nr01359d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional (2D) junction devices have recently attracted considerable attention. Here, we show that most 2D junction structures, whether vertical or lateral, act as a lateral monolayer-bilayer-monolayer junction in their operation. In particular, a vertical structure cannot function as a vertical junction as having been widely believed in the literature. Due to a larger electrostatic screening, the bilayer region in the junction always has a smaller bandgap than its monolayer counterpart. As a result, a potential well, aside from the usual potential barrier, will form universally in the bilayer region to affect the hole or electron quantum transport in the form of transmission or reflection. Taking black phosphorus as an example, our calculations using a non-equilibrium Green function combined with density functional theory show a distinct oscillation in the transmission coefficient in a two-electrode prototypical device, and the results can be qualitatively understood using a simple quantum well model.
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Affiliation(s)
- Junfeng Zhang
- Research Institute of Materials Science of Shanxi Normal University & Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Linfen 041004, China
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31
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Jiang-Tao L, Yun-Kai C, Hong T, Dai-Qiang W, Zhen-Hua W. Broad-spectrum enhanced absorption of graphene-molybdenum disulfide photovoltaic cells in metal-mirror microcavity. NANOTECHNOLOGY 2018; 29:144001. [PMID: 29376835 DOI: 10.1088/1361-6528/aaab13] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The optical absorption of graphene-molybdenum disulfide photovoltaic cells (GM-PVc) in wedge-shaped metal-mirror microcavities (w-MMCs) combined with a spectrum-splitting structure was studied. Results showed that the combination of spectrum-splitting structure and w-MMC can enable the light absorption of GM-PVcs to reach about 65% in the broad spectrum. The influence of processing errors on the absorption of GM-PVcs in w-MMCs was 3-14 times lower than that of GM-PVcs in wedge photonic crystal microcavities. The light absorption of GM-PVcs reached 60% in the broad spectrum, even with the processing errors. The proposed structure is easy to implement and may have potentially important applications in the development of ultra-thin and high-efficiency solar cells and optoelectronic devices.
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Affiliation(s)
- Liu Jiang-Tao
- College of Mechanical and Electrical Engineering, Guizhou Minzu University, Guiyang 550025, People's Republic of China. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China. Institute for Advanced Study, Nanchang University, Nanchang 330031, People's Republic of China
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33
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Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
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Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
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Murali K, Dandu M, Das S, Majumdar K. Gate-Tunable WSe 2/SnSe 2 Backward Diode with Ultrahigh-Reverse Rectification Ratio. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5657-5664. [PMID: 29355302 DOI: 10.1021/acsami.7b18242] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe2/SnSe2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 104, and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V-1. The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.
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Affiliation(s)
- Krishna Murali
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Medha Dandu
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Sarthak Das
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
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Zhou K, Wickramaratne D, Ge S, Su S, De A, Lake RK. Interlayer resistance of misoriented MoS 2. Phys Chem Chem Phys 2018; 19:10406-10412. [PMID: 28379226 DOI: 10.1039/c6cp08927e] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Interlayer misorientation in transition metal dichalcogenides alters their interlayer distance, total energy, electronic band structure, and vibrational modes, but its effect on the interlayer resistance is not known. This study analyzes the interlayer resistance of misoriented bilayer MoS2 as a function of the misorientation angle, and it shows that interlayer misorientation exponentially increases the electron resistivity while leaving the hole resistivity almost unchanged. The physics, determined by the wave functions at the high symmetry points, are generic among the popular semiconducting transition metal dichalcogenides (TMDs). The asymmetrical effect of misorientation on the electron and hole transport may be exploited in the design and optimization of vertical transport devices such as a bipolar transistor. Density functional theory provides the interlayer coupling elements used for the resistivity calculations.
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Affiliation(s)
- Kuan Zhou
- Department of Physics and Astronomy, University of California, Riverside, CA 92521-0204
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Almadori Y, Bendiab N, Grévin B. Multimodal Kelvin Probe Force Microscopy Investigations of a Photovoltaic WSe 2/MoS 2 Type-II Interface. ACS APPLIED MATERIALS & INTERFACES 2018; 10:1363-1373. [PMID: 29218991 DOI: 10.1021/acsami.7b14616] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Atomically thin transition-metal dichalcogenides (TMDC) have become a new platform for the development of next-generation optoelectronic and light-harvesting devices. Here, we report a Kelvin probe force microscopy (KPFM) investigation carried out on a type-II photovoltaic heterojunction based on WSe2 monolayer flakes and a bilayer MoS2 film stacked in vertical configuration on a Si/SiO2 substrate. Band offset characterized by a significant interfacial dipole is pointed out at the WSe2/MoS2 vertical junction. The photocarrier generation process and phototransport are studied by applying a differential technique allowing to map directly two-dimensional images of the surface photovoltage (SPV) over the vertical heterojunctions (vHJ) and in its immediate vicinity. Differential SPV reveals the impact of chemical defects on the photocarrier generation and that negative charges diffuse in the MoS2 a few hundreds of nanometers away from the vHJ. The analysis of the SPV data confirms unambiguously that light absorption results in the generation of free charge carriers that do not remain coulomb-bound at the type-II interface. A truly quantitative determination of the electron-hole (e-h) quasi-Fermi levels splitting (i.e., the open-circuit voltage) is achieved by measuring the differential vacuum-level shift over the WSe2 flakes and the MoS2 layer. The dependence of the energy-level splitting as a function of the optical power reveals that Shockley-Read-Hall processes significantly contribute to the interlayer recombination dynamics. Finally, a newly developed time-resolved mode of the KPFM is applied to map the SPV decay time constants. The time-resolved SPV images reveal the dynamics of delayed recombination processes originating from photocarriers trapping at the SiO2/TMDC interfaces.
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Affiliation(s)
- Yann Almadori
- Univ. Grenoble Alpes, CNRS, CEA, INAC-SyMMES , 38000 Grenoble, France
| | - Nedjma Bendiab
- Institut Néel, CNRS, Univ. Grenoble-Alpes , 38042 Grenoble Cedex 09, France
| | - Benjamin Grévin
- Univ. Grenoble Alpes, CNRS, CEA, INAC-SyMMES , 38000 Grenoble, France
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Shi E, Gao Y, Finkenauer BP, Akriti A, Coffey AH, Dou L. Two-dimensional halide perovskite nanomaterials and heterostructures. Chem Soc Rev 2018; 47:6046-6072. [PMID: 29564440 DOI: 10.1039/c7cs00886d] [Citation(s) in RCA: 141] [Impact Index Per Article: 23.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Novel two-dimensional halide perovskite nanomaterials and heterostructures enable next generation high performance electronics and photonics.
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Affiliation(s)
- Enzheng Shi
- Davidson School of Chemical Engineering
- Purdue University
- West Lafayette
- USA
| | - Yao Gao
- Davidson School of Chemical Engineering
- Purdue University
- West Lafayette
- USA
| | | | - Akriti Akriti
- Davidson School of Chemical Engineering
- Purdue University
- West Lafayette
- USA
| | - Aidan H. Coffey
- Davidson School of Chemical Engineering
- Purdue University
- West Lafayette
- USA
| | - Letian Dou
- Davidson School of Chemical Engineering
- Purdue University
- West Lafayette
- USA
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38
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Ko S, Na J, Moon YS, Zschieschang U, Acharya R, Klauk H, Kim GT, Burghard M, Kern K. Few-Layer WSe 2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping. ACS APPLIED MATERIALS & INTERFACES 2017; 9:42912-42918. [PMID: 29200255 DOI: 10.1021/acsami.7b13395] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al2O3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W-1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.
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Affiliation(s)
- Seungpil Ko
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Junhong Na
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Young-Sun Moon
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Ute Zschieschang
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Rachana Acharya
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Hagen Klauk
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Gyu-Tae Kim
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Marko Burghard
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Klaus Kern
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
- Institut de Physique, École Polytechnique Fédérale de Lausanne , CH-1015 Lausanne, Switzerland
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Zhao J, Cheng K, Han N, Zhang J. Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2017. [DOI: 10.1002/wcms.1353] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Affiliation(s)
- Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Kai Cheng
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Nannan Han
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Junfeng Zhang
- School of Physics and Information Engineering; Shanxi Normal University; Linfen China
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40
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Islam MA, Kim JH, Schropp A, Kalita H, Choudhary N, Weitzman D, Khondaker SI, Oh KH, Roy T, Chung HS, Jung Y. Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth. NANO LETTERS 2017; 17:6157-6165. [PMID: 28945439 DOI: 10.1021/acs.nanolett.7b02776] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum or tungsten disulfides (MoS2 or WS2) exhibit extremely large in-plane strain limits and unusual optical/electrical properties, offering unprecedented opportunities for flexible electronics/optoelectronics in new form factors. In order for them to be technologically viable building-blocks for such emerging technologies, it is critically demanded to grow/integrate them onto flexible or arbitrary-shaped substrates on a large wafer-scale compatible with the prevailing microelectronics processes. However, conventional approaches to assemble them on such unconventional substrates via mechanical exfoliations or coevaporation chemical growths have been limited to small-area transfers of 2D TMD layers with uncontrolled spatial homogeneity. Moreover, additional processes involving a prolonged exposure to strong chemical etchants have been required for the separation of as-grown 2D layers, which is detrimental to their material properties. Herein, we report a viable strategy to universally combine the centimeter-scale growth of various 2D TMD layers and their direct assemblies on mechanically deformable substrates. By exploring the water-assisted debonding of gold (Au) interfaced with silicon dioxide (SiO2), we demonstrate the direct growth, transfer, and integration of 2D TMD layers and heterostructures such as 2D MoS2 and 2D MoS2/WS2 vertical stacks on centimeter-scale plastic and metal foil substrates. We identify the dual function of the Au layer as a growth substrate as well as a sacrificial layer which facilitates 2D layer transfer. Furthermore, we demonstrate the versatility of this integration approach by fabricating centimeter-scale 2D MoS2/single walled carbon nanotube (SWNT) vertical heterojunctions which exhibit current rectification and photoresponse. This study opens a pathway to explore large-scale 2D TMD van der Waals layers as device building blocks for emerging mechanically deformable electronics/optoelectronics.
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Affiliation(s)
| | - Jung Han Kim
- Department of Materials Science and Engineering, Seoul National University , Seoul 08826, South Korea
| | | | | | | | | | | | - Kyu Hwan Oh
- Department of Materials Science and Engineering, Seoul National University , Seoul 08826, South Korea
| | | | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute , Jeonju 54907, Jeollabuk-do, South Korea
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41
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Lan C, Dong R, Zhou Z, Shu L, Li D, Yip S, Ho JC. Large-Scale Synthesis of Freestanding Layer-Structured PbI 2 and MAPbI 3 Nanosheets for High-Performance Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1702759. [PMID: 28815755 DOI: 10.1002/adma.201702759] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2017] [Revised: 06/18/2017] [Indexed: 06/07/2023]
Abstract
Recently, due to the possibility of thinning down to the atomic thickness to achieve exotic properties, layered materials have attracted extensive research attention. In particular, PbI2 , a kind of layered material, and its perovskite derivatives, CH3 NH3 PbI3 (i.e., MAPbI3 ), have demonstrated impressive photoresponsivities for efficient photodetection. Herein, the synthesis of large-scale, high-density, and freestanding PbI2 nanosheets is demonstrated by manipulating the microenvironment during physical vapor deposition. In contrast to conventional two-dimensional (2D) growth along the substrate surface, the essence here is the effective nucleation of microplanes with different angles relative to the in-plane direction of underlying rough-surfaced substrates. When configured into photodetectors, the fabricated device exhibits a photoresponsivity of 410 mA W-1 , a detectivity of 3.1 × 1011 Jones, and a fast response with the rise and decay time constants of 86 and 150 ms, respectively, under a wavelength of 405 nm. These PbI2 nanosheets can also be completely converted into MAPbI3 materials via chemical vapor deposition with an improved photoresponsivity up to 40 A W-1 . All these performance parameters are comparable to those of state-of-the-art layered-material-based photodetectors, revealing the technological potency of these freestanding nanosheets for next-generation high-performance optoelectronics.
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Affiliation(s)
- Changyong Lan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
- School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Ruoting Dong
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
| | - Ziyao Zhou
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| | - Lei Shu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
- State Key Laboratory of Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
| | - Dapan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
| | - SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
- State Key Laboratory of Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, P. R. China
- State Key Laboratory of Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
- Centre for Functional Photonics, City University of Hong Kong, Kowloon, Hong Kong S.A.R., 999077, P. R. China
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Alexeev EM, Catanzaro A, Skrypka OV, Nayak PK, Ahn S, Pak S, Lee J, Sohn JI, Novoselov KS, Shin HS, Tartakovskii AI. Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope. NANO LETTERS 2017; 17:5342-5349. [PMID: 28753319 DOI: 10.1021/acs.nanolett.7b01763] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent, and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridization of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The color and brightness in such images are used here to identify mono- and few-layer crystals and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in heterobilayers composed of mechanically exfoliated flakes and as a function of the twist angle in atomic layers grown by chemical vapor deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterization of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth.
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Affiliation(s)
- Evgeny M Alexeev
- Department of Physics and Astronomy, University of Sheffield , Sheffield S3 7RH, United Kingdom
| | - Alessandro Catanzaro
- Department of Physics and Astronomy, University of Sheffield , Sheffield S3 7RH, United Kingdom
| | - Oleksandr V Skrypka
- Department of Physics and Astronomy, University of Sheffield , Sheffield S3 7RH, United Kingdom
| | - Pramoda K Nayak
- Department of Energy Engineering and Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) , 50 UNIST-gil, Ulsan 44919, Republic of Korea
| | - Seongjoon Ahn
- Department of Energy Engineering and Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) , 50 UNIST-gil, Ulsan 44919, Republic of Korea
| | - Sangyeon Pak
- Department of Engineering Science, University of Oxford , Oxford OX1 3PJ, United Kingdom
| | - Juwon Lee
- Department of Engineering Science, University of Oxford , Oxford OX1 3PJ, United Kingdom
| | - Jung Inn Sohn
- Department of Engineering Science, University of Oxford , Oxford OX1 3PJ, United Kingdom
| | - Kostya S Novoselov
- School of Physics and Astronomy, University of Manchester , Oxford Road, Manchester M13 9PL, United Kingdom
| | - Hyeon Suk Shin
- Department of Energy Engineering and Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST) , 50 UNIST-gil, Ulsan 44919, Republic of Korea
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43
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Luong DH, Lee HS, Neupane GP, Roy S, Ghimire G, Lee JH, Vu QA, Lee YH. Tunneling Photocurrent Assisted by Interlayer Excitons in Staggered van der Waals Hetero-Bilayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28671724 DOI: 10.1002/adma.201701512] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2017] [Revised: 05/08/2017] [Indexed: 05/12/2023]
Abstract
Vertically stacked van der Waals (vdW) heterostructures have been suggested as a robust platform for studying interfacial phenomena and related electric/optoelectronic devices. While the interlayer Coulomb interaction mediated by the vdW coupling has been extensively studied for carrier recombination processes in a diode transport, its correlation with the interlayer tunneling transport has not been elucidated. Here, a contrast is reported between tunneling and drift photocurrents tailored by the interlayer coupling strength in MoSe2 /MoS2 hetero-bilayers (HBs). The interfacial coupling modulated by thermal annealing is identified by the interlayer phonon coupling in Raman spectra and the emerging interlayer exciton peak in photoluminescence spectra. In strongly coupled HBs, positive photocurrents are observed owing to the inelastic band-to-band tunneling assisted by interlayer excitons that prevail over exciton recombinations. By contrast, weakly coupled HBs exhibit a negative photovoltaic diode behavior, manifested as a drift current without interlayer excitonic emissions. This study sheds light on tailoring the tunneling transport for numerous optoelectronic HB devices.
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Affiliation(s)
- Dinh Hoa Luong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Repulic of Korea
| | - Hyun Seok Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Repulic of Korea
| | - Guru Prakash Neupane
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Repulic of Korea
| | - Shrawan Roy
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Repulic of Korea
| | - Ganesh Ghimire
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Repulic of Korea
| | - Jin Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Repulic of Korea
| | - Quoc An Vu
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Repulic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Repulic of Korea
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Chen B, Wu K, Suslu A, Yang S, Cai H, Yano A, Soignard E, Aoki T, March K, Shen Y, Tongay S. Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28692772 DOI: 10.1002/adma.201701201] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2017] [Revised: 05/24/2017] [Indexed: 06/07/2023]
Abstract
Chemical vapor deposition and growth dynamics of highly anisotropic 2D lateral heterojunctions between pseudo-1D ReS2 and isotropic WS2 monolayers are reported for the first time. Constituent ReS2 and WS2 layers have vastly different atomic structure, crystallizing in anisotropic 1T' and isotropic 2H phases, respectively. Through high-resolution scanning transmission electron microscopy, electron energy loss spectroscopy, and angle-resolved Raman spectroscopy, this study is able to provide the very first atomic look at intimate interfaces between these dissimilar 2D materials. Surprisingly, the results reveal that ReS2 lateral heterojunctions to WS2 produce well-oriented (highly anisotropic) Re-chains perpendicular to WS2 edges. When vertically stacked, Re-chains orient themselves along the WS2 zigzag direction, and consequently, Re-chains exhibit six-fold rotation, resulting in loss of macroscopic scale anisotropy. The degree of anisotropy of ReS2 on WS2 largely depends on the domain size, and decreases for increasing domain size due to randomization of Re-chains and formation of ReS2 subdomains. Present work establishes the growth dynamics of atomic junctions between novel anisotropic/isotropic 2D materials, and overall results mark the very first demonstration of control over anisotropy direction, which is a significant leap forward for large-scale nanomanufacturing of anisotropic systems.
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Affiliation(s)
- Bin Chen
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Kedi Wu
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Aslihan Suslu
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Sijie Yang
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Hui Cai
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Aliya Yano
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Emmanuel Soignard
- LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA
| | - Toshihiro Aoki
- LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA
| | - Katia March
- LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA
| | - Yuxia Shen
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
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Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS 2/SiO 2/p-GaN Heterostructures. Sci Rep 2017; 7:10002. [PMID: 28855573 PMCID: PMC5577265 DOI: 10.1038/s41598-017-09998-1] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2017] [Accepted: 08/01/2017] [Indexed: 11/23/2022] Open
Abstract
Integrating different dimentional materials on vertically stacked p-n hetero-junctions have facinated a considerable scrunity and can open up excellent feasibility with various functionalities in opto-electronic devices. Here, we demonstrate that vertically stacked p-GaN/SiO2/n-MoS2/Graphene heterostructures enable to exhibit prominent dual opto-electronic characteristics, including efficient photo-detection and light emission, which represents the emergence of a new class of devices. The photoresponsivity was found to achieve as high as ~10.4 AW−1 and the detectivity and external quantum efficiency were estimated to be 1.1 × 1010 Jones and ~30%, respectively. These values are superier than most reported hererojunction devices. In addition, this device exhibits as a self-powered photodetector, showing a high responsivity and fast response speed. Moreover, the device demonstrates the light emission with low turn-on voltage (~1.0 V) which can be realized by electron injection from graphene electrode and holes from GaN film into monolayer MoS2 layer. These results indicate that with a suitable choice of band alignment, the vertical stacking of materials with different dimentionalities could be significant potential for integration of highly efficient heterostructures and open up feasible pathways towards integrated nanoscale multi-functional optoelectronic devices for a variety of applications.
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46
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Zhang J, Jia S, Kholmanov I, Dong L, Er D, Chen W, Guo H, Jin Z, Shenoy VB, Shi L, Lou J. Janus Monolayer Transition-Metal Dichalcogenides. ACS NANO 2017; 11:8192-8198. [PMID: 28771310 DOI: 10.1021/acsnano.7b03186] [Citation(s) in RCA: 395] [Impact Index Per Article: 56.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The crystal configuration of sandwiched S-Mo-Se structure (Janus SMoSe) at the monolayer limit has been synthesized and carefully characterized in this work. By controlled sulfurization of monolayer MoSe2, the top layer of selenium atoms is substituted by sulfur atoms, while the bottom selenium layer remains intact. The structure of this material is systematically investigated by Raman, photoluminescence, transmission electron microscopy, and X-ray photoelectron spectroscopy and confirmed by time-of-flight secondary ion mass spectrometry. Density functional theory (DFT) calculations are performed to better understand the Raman vibration modes and electronic structures of the Janus SMoSe monolayer, which are found to correlate well with corresponding experimental results. Finally, high basal plane hydrogen evolution reaction activity is discovered for the Janus monolayer, and DFT calculation implies that the activity originates from the synergistic effect of the intrinsic defects and structural strain inherent in the Janus structure.
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Affiliation(s)
- Jing Zhang
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Shuai Jia
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Iskandar Kholmanov
- Department of Mechanical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States
| | - Liang Dong
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Dequan Er
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Weibing Chen
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Hua Guo
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Zehua Jin
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
| | - Vivek B Shenoy
- Department of Materials Science and Engineering, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States
| | - Li Shi
- Department of Mechanical Engineering, The University of Texas at Austin , Austin, Texas 78712, United States
| | - Jun Lou
- Department of Materials Science and Nanoengineering, Rice University , Houston, Texas 77005, United States
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Wu X, Li H, Liu H, Zhuang X, Wang X, Fan X, Duan X, Zhu X, Zhang Q, Meixner AJ, Duan X, Pan A. Spatially composition-modulated two-dimensional WS 2xSe 2(1-x) nanosheets. NANOSCALE 2017; 9:4707-4712. [PMID: 28327743 DOI: 10.1039/c7nr00272f] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Controllable synthesis of two-dimensional (2D) transition-metal dichalcogenides (TMDs) with tunable bandgaps is vital for their applications in nanophotonics, due to its efficient modulation of the physical and chemical properties of these atomic layered nanostructures. Here we report for the first time, the controllable synthesis of spatially composition-modulated WS2xSe2(1-x) nanosheets and WS2-WS2xSe2(1-x) lateral heterostructures by a developed one-step chemical vapor deposition (CVD) approach, as well as the understanding of their growth mechanism. During the growth, the composition was optically tuned along the plane of the atomic layered nanosheets through the precise control of evaporation sources. Microstructure characterization confirms the chemical identity of the composition modulated nanosheets, with S and Se contents gradually converting from the center to the edge. Local photoluminescence (PL) and Raman studies further demonstrate the position-dependent optical properties of the as-grown nanosheets, with the PL peak and Raman modes shifting in a wide range along the whole plane of the nanostructures, which are consistent with their tunable compositions and bandgaps. This demonstration of composition-modulated nanostructures provides a beneficial approach for the preparation of 2D semiconductor heterostructures and may open up a wide range of applications in nanoelectronics and optoelectronics.
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Affiliation(s)
- Xueping Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Honglai Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Hongjun Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China. and Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
| | - Xiaopeng Fan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xidong Duan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Qinglin Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
| | - Alfred J Meixner
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, Auf der Morgenstelle 18, 72076 Tübingen, Germany
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, Hunan 410082, P. R. China.
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Han N, Liu H, Zhang J, Gao J, Zhao J. Atomistic understanding of the lateral growth of graphene from the edge of an h-BN domain: towards a sharp in-plane junction. NANOSCALE 2017; 9:3585-3592. [PMID: 28246667 DOI: 10.1039/c6nr09962a] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The in-plane combination of graphene (G) and hexagonal-boron nitride (h-BN) leads to lateral h-BN/G heterostructures, which are promising candidates for novel two-dimensional electronics. The quality of the interface between G and h-BN domains is crucial for the device performance. By comprehensive first-principles calculations, we explore the heteroepitaxial growth of graphene along the edge of an h-BN domain on a Cu(111) surface and compare it with that on a Cu(111) terrace. We find that the graphene nucleation site strongly depends on the chemical potential of carbon and predeposited h-BN coverage. Under the suitable carbon concentration and coverage of h-BN, graphene mainly grows along the h-BN edge, leading to a sharp and straight h-BN/G interface. Our results provide insightful knowledge to synthesize well-defined h-BN/G and other lateral heterostructures.
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Affiliation(s)
- Nannan Han
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Hongsheng Liu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Junfeng Zhang
- School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China
| | - Junfeng Gao
- Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore.
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China. and Beijing Computational Science Research Center, Beijing 100089, China
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Olmos-Asar JA, Leão CR, Fazzio A. Novel III-Te–graphene van der Waals heterojunctions for optoelectronic devices. RSC Adv 2017. [DOI: 10.1039/c7ra03369a] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
2D heterostructures combining the high photoresponsivity of III-Te monolayers with the ballistic transport of graphene would improve the performance of optoelectronic devices.
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Affiliation(s)
| | | | - Adalberto Fazzio
- Universidade Federal do ABC
- Santo André
- Brazil
- Brazilian Nanotechnology National Laboratory (LNNano)
- CNPEM
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