Solution-processed nickel oxide nanoparticles with NiOOH for hole injection layers of high-efficiency organic light-emitting diodes

Flexible Substrate-Compatible and Efficiency-Improved Quantum-Dot Light-Emitting Diodes with Reduced Annealing Temperature of NiOx Hole-Injecting Layer

The growing demand for wearable and attachable displays has sparked significant interest in flexible quantum-dot light-emitting diodes (QLEDs). However, the challenges of fabricating and operating QLEDs on flexible substrates persist due to the lack of stable and low-temperature processable charge-injection/-transporting layers with aligned energy levels. In this study, we utilized NiOx nanoparticles that are compatible with flexible substrates as a hole-injection layer (HIL). To enhance the work function of the NiOx HIL, we introduced a self-assembled dipole modifier called 4-(trifluoromethyl)benzoic acid (4-CF3-BA) onto the surface of the NiOx nanoparticles. The incorporation of the dipole molecules through adsorption treatment has significantly changed the wettability and electronic characteristics of NiOx nanoparticles, resulting in the formation of NiO(OH) at the interface and a shift in vacuum level. The alteration of surface electronic states of the NiOx nanoparticles not only improves the carrier balance by reducing the hole injection barrier but also prevents exciton quenching by passivating defects in the film. Consequently, the NiOx-based red QLEDs with interfacial modification demonstrate a maximum current efficiency of 16.1 cd/A and a peak external quantum efficiency of 10.3%. This represents a nearly twofold efficiency enhancement compared to control devices. The mild fabrication requirements and low annealing temperatures suggest potential applications of dipole molecule-modified NiOx nanoparticles in flexible optoelectronic devices.

Laser digital patterning of conductive electrodes using metal oxide nanomaterials

As an alternative approach to the conventional deposition and photolithographic processes, the laser digital patterning (LDP) process, which is also known as the laser direct writing process, has attracted considerable attention because it is a non-photolithographic, non-vacuum, on-demand, and cost-effective electrode fabrication route that can be applied to various substrates, including heat-sensitive flexible substrates. The LDP process was initially developed using noble metal nanoparticles (NPs) such as Au and Ag because such materials are free from oxidation even in a nanosize configuration. Thus, the NPs must be fused together to form continuous conductive structures upon laser irradiation. However, common metals are easily oxidized at the nanoscale and exist in oxidized forms owing to the extremely large surface-to-volume ratio of NPs. Therefore, to fabricate conductive electrodes using common metal NPs via the LDP process, laser irradiation should be used to sinter the NPs and simultaneously induce additional photochemical reactions, such as reduction, and defect structure modification to increase the conductivity of the electrodes. This review summarizes recent studies on the LDP process in which metal oxide NPs, such as ITO, ZnO, CuO, and NiO, were exclusively utilized for fabricating conductive electrodes. The outlook of the LDP process for these materials is also discussed as a method that can be used together with or as a replacement for conventional ones to produce next-generation transparent conductors, sensors, and electronics.

High-Speed Photothermal Patterning of Doped Polymer Films

Organic semiconductors (OSCs) offer a new avenue to the next-generation electronics, but the lack of a scalable and inexpensive nanoscale patterning/deposition technique still limits their use in electronic applications. Recently, a new lithographic etching technique has been introduced that uses molecular dopants to reduce semiconducting polymer solubility in solvents and a direct-write laser to remove dopants locally, enabling rapid OSC etching with diffraction limited resolution. Previous publications postulated that the reaction that enables patterning is a photochemical reaction between photoexcited dopants with neutral solvent molecules. In this work, we analyze the photoinduced dissolution kinetics of F4TCNQ doped P3HT films using time-resolved in situ optical probing. We find two competing mechanisms that control de-doping and dissolution: the first is the photochemical reaction posited in the literature, and the second involves direct heating of the polymer by the laser, inducing increased solubility for both the polymer and dopant. We show that the wavelength-specific photochemical effect is dominant in low photon doses while the photothermal effect is dominant with high excitation rates regardless of laser wavelength. With sufficiently high optical intensity input, the photothermal mechanism can in principle achieve a high writing speed up to 1 m/s. Our findings bring new insights into the mechanisms behind laser direct writing of OSCs based on dopant induced solubility control and enable ultraprecise fabrications of various device configurations in large-scale manufacturing.

Highly efficient and stable inverted perovskite solar cell employing PEDOT:GO composite layer as a hole transport layer

The beneficial use of a hole transport layer (HTL) as a substitution for poly(3,4-ethlyenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) is regarded as one of the most important approaches for improving the stability and efficiency of inverted perovskite solar cells. Here, we demonstrate highly efficient and stable inverted perovskite solar cells by applying a GO-doped PEDOT:PSS (PEDOT:GO) film as an HTL. The high performance of this solar cell stems from the excellent optical and electrical properties of the PEDOT:GO film, including a higher electrical conductivity, a higher work function related to the reduced contact barrier between the perovskite layer and the PEDOT:GO layer, enhanced crystallinity of the perovskite crystal, and suppressed leakage current. Moreover, the device with the PEDOT:GO layer showed excellent long-term stability in ambient air conditions. Thus, the enhancement in the efficiency and the excellent stability of inverted perovskite solar cells are promising for the eventual commercialization of perovskite optoelectronic devices.

Effects of Self-Assembled Monolayer Modification of Nickel Oxide Nanoparticles Layer on the Performance and Application of Inverted Perovskite Solar Cells

Entirely low-temperature solution-processed (≤100 °C) planar p-i-n perovskite solar cells (PSCs) offer great potential for commercialization of roll-to-roll fabricated photovoltaic devices. However, the stable inorganic hole-transporting layer (HTL) in PSCs is usually processed at high temperature (200-500 °C), which is far beyond the tolerant temperature (≤150 °C) of roll-to-roll fabrication. In this context, inorganic NiO_x nanoparticles (NPs) are an excellent candidate to serve as the HTL in PSCs, owing to their excellent solution processability at room temperature. However, the low-temperature processing condition is usually accompanied with defect formation, which deteriorates the film quality and device efficiency to a large extent. To suppress this setback, we used a series of benzoic acid selfassembled monolayers (SAMs) to passivate the surface defects of the NiO_x NPs and found that 4-bromobenzoic acid could effectively play the role of the surface passivation. This SAM layer reduces the trap-assisted recombination, minimizes the energy offset between the NiO_x NPs and perovskite, and changes the HTL surface wettability, thus enhancing the perovskite crystallization, resulting in more stable PSCs with enhanced power conversion efficiency (PCE) of 18.4 %, exceeding the control device PCE (15.5 %). Also, we incorporated the above-mentioned SAMs into flexible PSCs (F-PSCs) and achieved one of the highest PCE of 16.2 % on a polyethylene terephthalate (PET) substrate with a remarkable power-per-weight of 26.9 W g^-1 . This facile interfacial engineering method offers great potential for the large-scale manufacturing and commercialization of PSCs.