Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

Nanostructured In₂Se₃ compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In₂Se₃ has caused a new upsurge of scientific interest in nanostructured In₂Se₃ and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In₂Se₃ are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In₂Se₃ compound family. Recent achievements in the preparation of low-D In₂Se₃ with controlled phases are discussed in detail. General principles for obtaining pure-phased In₂Se₃ nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In₂Se₃ with different phases are also summarized. Progress and challenges on the applications of In₂Se₃ nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In₂Se₃ materials are presented.

Catalyst-free growth of dense γ-In2Se3 nanosheet arrays and their application in photoelectric detectors

In this work, a dense γ-In₂Se₃ nanosheet array has been fabricated using the chemical vapor deposition method under atmospheric pressure. Compared with crystal silicon, the photodetector based on the γ-In₂Se₃/p-Si heterojunction exhibits a high responsivity (96.7 mA W^-1) at the near-infrared region, a presentable current on/off ratio (∼1000) and excellent detectivity (2.03 × 10¹² jones). Simultaneously, the obtained photodetector demonstrated a fast response speed (0.15 ms/0.5 ms) and a broadband sensitive wavelength from ultraviolet (340 nm) to near-infrared (1020 nm). The photoelectric experimental data of the device shows that its high performance is attributed to the high-light absorption capacity of the material, the rational energy band structures of γ-In₂Se₃ and p-Si, and the effective separation of photo-generated carriers caused by the formed type-II heterojunction. Our work provides the primary experimental basis for the photodetection application of the γ-In₂Se₃ nanostructure.

[Bmmim]6[In10Se16Cl4]·(MIm)2: an organic-ligand free discrete T3 cluster for efficient hydrogen evolution under visible light irradiation

An indium selenide [Bmmim]6[In10Se16Cl4]·(MIm)2 (Bmmim = 1-butyl-2,3-dimethylimidazolium, MIm = 1-methylimidazole) cluster has been synthesized and characterized. The discrete T3 cluster could be stably dispersed in dimethyl sulfoxide, exhibiting photocatalytic hydrogen evolution activity at least six times that of the pristine in the solid state due to the exposure of more active sites.

CuInS2–In2Se3 quantum dots – a novel material via a green synthesis approach

Novel CuInS₂–In₂Se₃ QDs were prepared by a two stage organometallic colloidal synthesis procedure. A layer of indium selenide was grown over the CuInS₂ QD core, under high temperature in the presence of oleylamine. The optical properties of the nanostructures grown were studied using UV-Vis absorption spectroscopy and the band gap obtained was in line with the cyclic voltammetry (CV) results. The elemental composition was analysed using energy dispersive X-ray spectroscopy (EDAX), inductive coupled plasma-atomic emission spectroscopy (ICP-AES) and X-ray photoelectron spectroscopy (XPS). The structural properties were investigated using X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). The TEM images showed spherical nanostructures of size about 4.8 nm with well-defined lattice planes which were also evident from selected area electron diffraction (SAED) patterns. The XRD pattern indicated a tetragonal chalcopyrite crystal structure for the nanostructures.

Novel CuInS₂–In₂Se₃ QDs prepared by a two stage organometallic colloidal synthesis.