1
|
Wu J, Li Z, Liang T, Mo Q, Wei J, Li B, Xing X. Density Functional Theory Provides Insights into β-SnSe Monolayers as a Highly Sensitive and Recoverable Ozone Sensing Material. MICROMACHINES 2024; 15:960. [PMID: 39203611 PMCID: PMC11356510 DOI: 10.3390/mi15080960] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/25/2024] [Revised: 07/21/2024] [Accepted: 07/24/2024] [Indexed: 09/03/2024]
Abstract
This study explores the potential of β-SnSe monolayers as a promising material for ozone (O3) sensing using density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) method. The adsorption characteristics of O3 molecules on the β-SnSe monolayer surface were thoroughly investigated, including adsorption energy, band structure, density of states (DOSs), differential charge density, and Bader charge analysis. Post-adsorption, hybridization energy levels were introduced into the system, leading to a reduced band gap and increased electrical conductivity. A robust charge exchange between O3 and the β-SnSe monolayer was observed, indicative of chemisorption. Recovery time calculations also revealed that the β-SnSe monolayer could be reused after O3 adsorption. The sensitivity of the β-SnSe monolayer to O3 was quantitatively evaluated through current-voltage characteristic simulations, revealing an extraordinary sensitivity of 1817.57% at a bias voltage of 1.2 V. This sensitivity surpasses that of other two-dimensional materials such as graphene oxide. This comprehensive investigation demonstrates the exceptional potential of β-SnSe monolayers as a highly sensitive, recoverable, and environmentally friendly O3 sensing material.
Collapse
Affiliation(s)
- Jiayin Wu
- Department of Engineering Technology, Guangdong Open University, Guangzhou 510091, China; (J.W.); (J.W.); (B.L.)
- Centre for Optical and Electromagnetic Research, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zongbao Li
- Ministry of Education Key Laboratory of Textile Fiber Products, School of Materials Science and Engineering, Wuhan Textile University, Wuhan 430220, China
- School of Materials and Chemistry Engineering, Tongren University, Tongren 554300, China
| | - Tongle Liang
- School of Artificial Intelligence, Guangdong Vocational College of Post and Telecom, Guangzhou 510630, China;
| | - Qiuyan Mo
- Big Data Engineering College, Kaili University, Kaili 556011, China;
| | - Jingting Wei
- Department of Engineering Technology, Guangdong Open University, Guangzhou 510091, China; (J.W.); (J.W.); (B.L.)
| | - Bin Li
- Department of Engineering Technology, Guangdong Open University, Guangzhou 510091, China; (J.W.); (J.W.); (B.L.)
| | - Xiaobo Xing
- Centre for Optical and Electromagnetic Research, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| |
Collapse
|
2
|
Shi HL, Han QZ, Yang J, Gong LJ, Ren YH, Zhao YH, Yang H, Liu QH, Jiang ZT. Unveiling the temperature-dependent thermoelectric properties of the undoped and Na-doped monolayer SnSe allotropes: a comparative study. NANOTECHNOLOGY 2024; 35:195705. [PMID: 38306692 DOI: 10.1088/1361-6528/ad256f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2023] [Accepted: 02/02/2024] [Indexed: 02/04/2024]
Abstract
Motivated by the excellent thermoelectric (TE) performance of bulk SnSe, extensive attention has been drawn to the TE properties of the monolayer SnSe. To uncover the fundamental mechanism of manipulating the TE performance of the SnSe monolayer, we perform a systematic study on the TE properties of five monolayer SnSe allotropes such asα-,β-,γ-,δ-, andε-SnSe based on the density functional theory and the non-equilibrium Green's functions. By comparing the TE properties of the Na-doped SnSe allotropes with the undoped ones, the influences of the Na doping and the temperature on the TE properties are deeply investigated. It is shown that the figure of meritZTwill increase as the temperature increases, which is the same for almost all the Na-doped and undoped cases. The Na doping can enhance or suppress theZTin different SnSe allotropes at different temperatures, implying the presence of the anomalous suppression of theZT. The Na doping inducedZTsuppression may be caused basically by the sharp decrease of the power factor and the weak decrease of the electronic thermal conductance, rather than by the decrease of the phononic thermal conductance. We hope this work will be able to enrich the understanding of the manipulation of TE properties by means of dimensions, structurization, doping, and temperature.
Collapse
Affiliation(s)
- H L Shi
- School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Q Z Han
- Beijing Academy of Quantum Information Sciences, Beijing 100193, People's Republic of China
| | - J Yang
- Shandong Graphenjoy Advanced Material CO. LTD, Dezhou 253072, People's Republic of China
| | - L J Gong
- School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Y H Ren
- Department of Chemistry, Tsinghua University, Beijing 100084, People's Republic of China
| | - Y H Zhao
- School of Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- National Basic Science Data Center, Beijing 100190, People's Republic of China
| | - H Yang
- School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Q H Liu
- School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Z T Jiang
- School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| |
Collapse
|
3
|
Zhu C, Feng T, Jiang X, Li G, Yuan JH, Liu C, Zhang P, Wang J. Electronic, mechanical and gas sensing properties of two-dimensional γ-SnSe. Phys Chem Chem Phys 2023; 25:28716-28726. [PMID: 37850228 DOI: 10.1039/d3cp03483f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
Two-dimensional (2D) materials are excellent candidates for advanced flexible electronics and gas sensors. Herein, we systematically investigate the layer-dependent electronic structures, mechanical properties and gas sensing characteristics of the newly synthesized γ-SnSe based on first-principles calculations. Bulk γ-SnSe is a typical van der Waals layered material with an indirect narrow band gap, while monolayer and multilayer γ-SnSe can be obtained through mechanical exfoliation due to its low cleavage energy. The band gap of γ-SnSe gradually increases with decreasing layers, reaching a value of 2.25 eV for the monolayer due to weakened interlayer coupling. Mechanical analysis reveals strong anisotropy in multilayer γ-SnSe, whereas the monolayer exhibits a negative Poisson's ratio (-0.023/-0.025). Additionally, based on the analysis of electronic structures, adsorption energies and charge transfer of the host materials after adsorption of various gases, it is found that the γ-SnSe monolayer demonstrates enhanced sensitivity and selectivity towards NO, NO2, and SO2 compared to CO, CO2, H2S and NH3. These findings highlight the potential of γ-SnSe as an excellent gas-sensitive material for the detection of nitrogen oxides and sulfur dioxide.
Collapse
Affiliation(s)
- Chunyan Zhu
- Key Laboratory of Cognitive Science of State Ethnic Affairs Commission, Hubei Key Laboratory of Medical Information Analysis and Tumor Diagnosis and Treatment, College of Biomedical Engineering, South-Central Minzu University, Wuhan 430074, China.
| | - Tianhang Feng
- Key Laboratory of Cognitive Science of State Ethnic Affairs Commission, Hubei Key Laboratory of Medical Information Analysis and Tumor Diagnosis and Treatment, College of Biomedical Engineering, South-Central Minzu University, Wuhan 430074, China.
| | - Xinying Jiang
- Key Laboratory of Cognitive Science of State Ethnic Affairs Commission, Hubei Key Laboratory of Medical Information Analysis and Tumor Diagnosis and Treatment, College of Biomedical Engineering, South-Central Minzu University, Wuhan 430074, China.
| | - Gang Li
- College of Railway Rolling Stock, Wuhan Railway Vocational College of Technology, Wuhan 430205, China.
| | - Jun-Hui Yuan
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Chao Liu
- Key Laboratory of Cognitive Science of State Ethnic Affairs Commission, Hubei Key Laboratory of Medical Information Analysis and Tumor Diagnosis and Treatment, College of Biomedical Engineering, South-Central Minzu University, Wuhan 430074, China.
| | - Pan Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Jiafu Wang
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| |
Collapse
|
4
|
Al Bouzieh N, Sattar MA, Benkraouda M, Amrane N. A Comparative Study of Electronic, Optical, and Thermoelectric Properties of Zn-Doped Bulk and Monolayer SnSe Using Ab Initio Calculations. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2084. [PMID: 37513095 PMCID: PMC10383460 DOI: 10.3390/nano13142084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 06/11/2023] [Accepted: 06/25/2023] [Indexed: 07/30/2023]
Abstract
In this study, we explore the effects of Zn doping on the electronic, optical, and thermoelectric properties of α-SnSe in bulk and monolayer forms, employing density functional theory calculations. By varying the doping concentrations, we aim to understand the characteristics of Zn-doped SnSe in both systems. Our analysis of the electronic band structure using (PBE), (SCAN), and (HSE06) functionals reveals that all doped systems exhibit semiconductor-like behavior, making them suitable for applications in optoelectronics and photovoltaics. Notably, the conduction bands in SnSe monolayers undergo changes depending on the Zn concentration. Furthermore, the optical analysis indicates a decrease in the dielectric constant when transitioning from bulk to monolayer forms, which is advantageous for capacitor production. Moreover, heavily doped SnSe monolayers hold promise for deep ultraviolet applications. Examining the thermoelectric transport properties, we observe that Zn doping enhances the electrical conductivity in bulk SnSe at temperatures below 500 K. However, the electronic thermal conductivity of monolayer samples is lower compared to bulk samples, and it decreases consistently with increasing Zn concentrations. Additionally, the Zn-doped 2D samples exhibit high Seebeck coefficients across most of the temperature ranges investigated.
Collapse
Affiliation(s)
- Najwa Al Bouzieh
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Muhammad Atif Sattar
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
- National Water and Energy Center (NWEC), United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Maamar Benkraouda
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| | - Noureddine Amrane
- Physics Department, College of Science, United Arab Emirates University (UAEU), Al Ain 15551, United Arab Emirates
| |
Collapse
|
5
|
Jia PZ, Xie JP, Chen XK, Zhang Y, Yu X, Zeng YJ, Xie ZX, Deng YX, Zhou WX. Recent progress of two-dimensional heterostructures for thermoelectric applications. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:073001. [PMID: 36541472 DOI: 10.1088/1361-648x/aca8e4] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Accepted: 12/05/2022] [Indexed: 06/17/2023]
Abstract
The rapid development of synthesis and fabrication techniques has opened up a research upsurge in two-dimensional (2D) material heterostructures, which have received extensive attention due to their superior physical and chemical properties. Currently, thermoelectric energy conversion is an effective means to deal with the energy crisis and increasingly serious environmental pollution. Therefore, an in-depth understanding of thermoelectric transport properties in 2D heterostructures is crucial for the development of micro-nano energy devices. In this review, the recent progress of 2D heterostructures for thermoelectric applications is summarized in detail. Firstly, we systematically introduce diverse theoretical simulations and experimental measurements of the thermoelectric properties of 2D heterostructures. Then, the thermoelectric applications and performance regulation of several common 2D materials, as well as in-plane heterostructures and van der Waals heterostructures, are also discussed. Finally, the challenges of improving the thermoelectric performance of 2D heterostructures materials are summarized, and related prospects are described.
Collapse
Affiliation(s)
- Pin-Zhen Jia
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Jia-Ping Xie
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Xue-Kun Chen
- School of Mathematics and Physics, University of South China, Hengyang 421001, People's Republic of China
| | - Yong Zhang
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Xia Yu
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Yu-Jia Zeng
- School of Materials Science and Engineering and Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| | - Zhong-Xiang Xie
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Yuan-Xiang Deng
- Department of Mathematics and Physics, Hunan Institute of Technology, Hengyang 421002, People's Republic of China
| | - Wu-Xing Zhou
- School of Materials Science and Engineering and Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
| |
Collapse
|
6
|
Li L, Huang Z, Xu J, Huang H. Theoretical analysis of the thermoelectric properties of penta-PdX2 (X = Se, Te) monolayer. Front Chem 2022; 10:1061703. [DOI: 10.3389/fchem.2022.1061703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2022] [Accepted: 10/28/2022] [Indexed: 11/09/2022] Open
Abstract
Based on the successful fabrication of PdSe2 monolayers, the electronic and thermoelectric properties of pentagonal PdX2 (X = Se, Te) monolayers were investigated via first-principles calculations and the Boltzmann transport theory. The results showed that the PdX2 monolayer exhibits an indirect bandgap at the Perdew–Burke–Ernzerhof level, as well as electronic and thermoelectric anisotropy in the transmission directions. In the PdTe2 monolayer, P-doping owing to weak electron–phonon coupling is the main reason for the excellent electronic properties of the material. The low phonon velocity and short phonon lifetime decreased the thermal conductivity (κl) of penta-PdTe2. In particular, the thermal conductivity of PdTe2 along the x and y transmission directions was 0.41 and 0.83 Wm−1K−1, respectively. Owing to the anisotropy of κl and electronic structures along the transmission direction of PdX2, an anisotropic thermoelectric quality factor ZT appeared in PdX2. The excellent electronic properties and low lattice thermal conductivity (κl) achieved a high ZT of the penta-PdTe2 monolayer, whereas the maximum ZT of the p- and n-type PdTe2 reached 6.6 and 4.4, respectively. Thus, the results indicate PdTe2 as a promising thermoelectric candidate.
Collapse
|
7
|
Sun Q, Yang M, Zeng G, Li J, Hu Z, Li D, Wang S, Si P, Tian Y, Ci L. Insights into the Potassium Ion Storage Behavior and Phase Evolution of a Tailored Yolk-Shell SnSe@C Anode. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203459. [PMID: 36026577 DOI: 10.1002/smll.202203459] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2022] [Revised: 08/05/2022] [Indexed: 06/15/2023]
Abstract
Tin chalcogenides are regarded as promising anode materials for potassium ion batteries (PIBs) due to their considerable specific capacity. However, the severe volume effect, limited electronic conductivity, and the shuttle effect of the potassiation product restrict the application prospect. Herein, based on the metal evaporation reaction, a facile structural engineering strategy for yolk-shell SnSe encapsulated in carbon shell (SnSe@C) is proposed. The internal void can accommodate the volume change of the SnSe core and the carbon shell can enhance the electronic conductivity. Combining qualitative and quantitative electrochemical analyses, the distinguished electrochemical performance of SnSe@C anode is attributed to the contribution of enhanced capacitive behavior. Additionally, first-principles calculations elucidate that the heteroatomic doped carbon exhibits a preferable affinity toward potassium ions and the potassiation product K2 Se, boosting the rate performance and capacity retention consequently. Furthermore, the phase evolution of SnSe@C electrode during the potassiation/depotassiation process is clarified by in situ X-ray diffraction characterization, and the crystal transition from the SnSe Pnma(62) to Cmcm(63) point group is discovered unpredictably. This work demonstrates a pragmatic avenue to tailor the SnSe@C anode via a facile structural engineering strategy and chemical regulation, providing substantial clarification for the phase evolution mechanism of SnSe-based anode for PIBs.
Collapse
Affiliation(s)
- Qing Sun
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Research Center for Carbon Nanomaterials, School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China
| | - Maoxiang Yang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Research Center for Carbon Nanomaterials, School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
| | - Guifang Zeng
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Research Center for Carbon Nanomaterials, School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
| | - Jing Li
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Research Center for Carbon Nanomaterials, School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
| | - Zhibiao Hu
- School of Mechanical, Electrical and Information Engineering, Shandong University, Weihai, 264209, China
| | - Deping Li
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Research Center for Carbon Nanomaterials, School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
- State Key Laboratory of Advanced Welding and Joining, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Shang Wang
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China
| | - Pengchao Si
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Research Center for Carbon Nanomaterials, School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
| | - Yanhong Tian
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China
| | - Lijie Ci
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Research Center for Carbon Nanomaterials, School of Materials Science and Engineering, Shandong University, Jinan, 250061, China
- State Key Laboratory of Advanced Welding and Joining, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| |
Collapse
|
8
|
Sun J, Zhang C, Yang Z, Shen Y, Hu M, Wang Q. Four-Phonon Scattering Effect and Two-Channel Thermal Transport in Two-Dimensional Paraelectric SnSe. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11493-11499. [PMID: 35191673 DOI: 10.1021/acsami.1c24488] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In recent years, increased attention has been paid to the study of four-phonon interactions and diffusion transport in three-dimensional (3D) thermoelectric materials because they play an essential role in understanding the thermal transport process. In this work, we study four-phonon scattering and diffusion transport in two-dimensional (2D) thermoelectric materials using the paraelectric phase of 2D SnSe as an example. The inherent soft phonon modes are treated by the self-consistent phonon theory, which considers the temperature-induced renormalization of the phonons. Based on density functional theory and the Peierls-Boltzmann transport equation for phonons, we show that the four-phonon interactions can reduce the thermal conductivity of the 2D SnSe sheet by nearly 40% due to the collapse of soft optical modes, and the contribution of diffusion transport to the total thermal conductivity accounts for 14% at a high temperature of 800 K due to the short phonon mean free path approaching the Ioffe-Regel limit, suggesting the two-channel transport in this system. The results are further confirmed by using the machine learning-assisted molecular dynamics simulations. This work provides a new insight into the physical mechanisms for thermal transport in 2D systems with strong anharmonic effects.
Collapse
Affiliation(s)
- Jie Sun
- School of Materials Science and Engineering, CAPT, HEDPS, BKL-MEMD, Peking University, Beijing 100871, China
| | - Cunzhi Zhang
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Zhonghua Yang
- Department of Mechanical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
- College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang 110870, China
| | - Yiheng Shen
- School of Materials Science and Engineering, CAPT, HEDPS, BKL-MEMD, Peking University, Beijing 100871, China
| | - Ming Hu
- Department of Mechanical Engineering, University of South Carolina, Columbia, South Carolina 29208, United States
| | - Qian Wang
- School of Materials Science and Engineering, CAPT, HEDPS, BKL-MEMD, Peking University, Beijing 100871, China
| |
Collapse
|
9
|
Sathya N, Karki B, Rane KP, Jha A, Pal A. Tuning and Sensitivity Improvement of Bi-Metallic Structure-Based Surface Plasmon Resonance Biosensor with 2-D ε -Tin Selenide Nanosheets. PLASMONICS (NORWELL, MASS.) 2022; 17:1001-1008. [PMID: 35069047 PMCID: PMC8763424 DOI: 10.1007/s11468-021-01565-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2021] [Accepted: 11/18/2021] [Indexed: 05/09/2023]
Abstract
This manuscript aims to analyze the effect of tin selenide (SnSe) on the sensing application of SPR biosensors. Tin selenide is the 2-dimensional transition metal dichalcogenide material. The proposed multilayer structure has a BK7 prism, a bimetallic layer of Au, tin selenide, and a graphene layer. Tin selenide is used to improve the performance parameters of the biosensor. The ε - SnSe nanosheet is placed in between two layers of gold (Au) in the Kretschmann configuration. The proposed configuration has a maximum sensitivity of 214 deg/RIU, 93.81% higher than the conventional sensor. The performance parameters like full width half maximum, detection accuracy, and quality factor have been analyzed. The ε - SnSe material is an air-stable 2-D. The proposed sensor is suitable for the analysis of chemical, medical, and biological analytes.
Collapse
Affiliation(s)
- Natarajan Sathya
- Engineering Department, Scientific Society Group, Tamilnadu, India
| | - Bhishma Karki
- Department of Physics, Tri-Chandra Multiple Campus, Tribhuvan University, Kathmandu, 44600 Nepal
| | | | - Ankit Jha
- Department of EECE, DIT University, Dehradun, Uttrakhand 248009 India
| | - Amrindra Pal
- Department of EECE, DIT University, Dehradun, Uttrakhand 248009 India
| |
Collapse
|
10
|
Song HY, Sun JJ, Li M. Enhancement of monolayer HfSe2 thermoelectric performance by strain engineering: A DFT calculation. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2021.139109] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
|
11
|
Choi HK, Cha J, Choi CG, Kim J, Hong S. Effect of Point Defects on Electronic Structure of Monolayer GeS. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2960. [PMID: 34835724 PMCID: PMC8618743 DOI: 10.3390/nano11112960] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/30/2021] [Revised: 10/23/2021] [Accepted: 10/23/2021] [Indexed: 11/16/2022]
Abstract
Using density functional theory calculations, atomic and electronic structure of defects in monolayer GeS were investigated by focusing on the effects of vacancies and substitutional atoms. We chose group IV or chalcogen elements as substitutional ones, which substitute for Ge or S in GeS. It was found that the bandgap of GeS with substitutional atoms is close to that of pristine GeS, while the bandgap of GeS with Ge or S vacancies was smaller than that of pristine GeS. In terms of formation energy, monolayer GeS with Ge vacancies is more stable than that with S vacancies, and notably GeS with Ge substituted with Sn is most favorable within the range of chemical potential considered. Defects affect the piezoelectric properties depending on vacancies or substitutional atoms. Especially, GeS with substitutional atoms has almost the same piezoelectric stress coefficients eij as pristine GeS while having lower piezoelectric strain coefficients dij but still much higher than other 2D materials. It is therefore concluded that Sn can effectively heal Ge vacancy in GeS, keeping high piezoelectric strain coefficients.
Collapse
Affiliation(s)
| | | | | | | | - Suklyun Hong
- Department of Physics, Graphene Research Institute, and GRI-TPC International Research Center, Sejong University, Seoul 05006, Korea; (H.-K.C.); (J.C.); (C.-G.C.); (J.K.)
| |
Collapse
|
12
|
Rikta K, Anower M, Rahman MS, Rahman MM. SPR biosensor using SnSe-phosphorene heterostructure. SENSING AND BIO-SENSING RESEARCH 2021. [DOI: 10.1016/j.sbsr.2021.100442] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 01/25/2023] Open
|
13
|
Li F, Chen H, Xu L, Zhang F, Yin P, Yang T, Shen T, Qi J, Zhang Y, Li D, Ge Y, Zhang H. Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:33226-33236. [PMID: 34236163 DOI: 10.1021/acsami.1c05254] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Ultrathin lamellar SnSe is highly attractive for applications in areas such as photonics, photodetectors, photovoltaic devices, and photocatalysis, owing to its suitable band gap, exceptional light absorption capabilities, and considerable carrier mobility. On the other hand, SnSe nanosheets (NSs) still face challenges of being difficult to prepare and their devices having low photoelectric conversion efficiencies. Herein, ultrathin SnSe NSs with controlled Se defects were synthesized with high yield by a facial Li intercalation-assisted liquid exfoliation method. The loss of Se, a narrowing of the band gap, and an increase in lattice disorders involving vacancies, distortions, and phase transition were observed in SnSe NSs prepared with a long lithiation process. Comparing between the 24 and 72 h lithiation samples, the ones processed for a longer time displayed a faster recombination time due to more defect-induced mid-states. Inspiringly, enhancements of 4-10 times were observed for photodetector device parameters such as photocurrent, photoresponsivity, photoresponse speed, and specific detectivity of the 72 h lithiation SnSe NSs. Additionally, these devices show good stability and a broad detection range, from ultraviolet to the near infrared region. Our results provide a promising avenue for the mass production of SnSe NSs with high photoelectric performance and open up opportunities for applications in photonics, optoelectronics, and photocatalysis.
Collapse
Affiliation(s)
- Feng Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Hualong Chen
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Lei Xu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Feng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Peng Yin
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tingqiang Yang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Tao Shen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Delong Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yanqi Ge
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| |
Collapse
|
14
|
Yin ZP, Sheng CY, Hu R, Han SH, Fan DD, Cao GH, Liu HJ. Strong interlayer coupling in two-dimensional PbSe with high thermoelectric performance. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:325701. [PMID: 33232949 DOI: 10.1088/1361-648x/abcd7d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2020] [Accepted: 11/24/2020] [Indexed: 06/11/2023]
Abstract
It was generally believed that weak van der Waals interactions exist between neighboring layers in the two-dimensional group-IV chalcogenides. Using PbSe as a prototypal example, we find additional strong coupling between the Pb-Pb layers, as evidenced by detailed analysis of the differential charge density plot. The coupling is covalent-like and can be fine-tuned to obviously reduce the phonon thermal conductivity but slightly change the electronic transport of PbSe layer. As a consequence, a maximumZTvalue of 2.5 can be realized at 900 K for thep-type system. Our work also offers an effective and feasible design strategy to enhance the thermoelectric performance of similar layered structures.
Collapse
Affiliation(s)
- Z P Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - C Y Sheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - R Hu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - S H Han
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - D D Fan
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - G H Cao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - H J Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| |
Collapse
|
15
|
Marfoua B, Hong J. High thermoelectric performance in two dimensional chalcogenides systems: GaSe and GaTe. NANOTECHNOLOGY 2021; 32:115702. [PMID: 33254157 DOI: 10.1088/1361-6528/abcef2] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Among the group-III chalcogenides, the two-dimensional (2D) GaSe and GaTe materials have been synthesized, but recent theoretical studies have raised controversial results regarding their thermoelectric (TE) properties. Hereby, systematically investigated the temperature and carrier concentration dependent TE properties of 2D GaSe and GaTe. We found that the GaSe had an indirect band gap of 2.94 eV while the GaTe had an indirect band gap of 1.88 eV. Both materials had almost the same Seebeck coefficients, but the p-type GaTe had the longest carrier relaxation time. We obtained the largest electrical conductivity over the thermal conductivity ratio in p-type GaTe compared with all other systems. This results in a very high p-type ZT of 0.91. Moreover, this high ZT performance is only changed by approximately 7% in a wide range of temperatures (300-700 K) and carrier concentration (1011-1013 hole cm-2). Compared with previously reported results, we find that it is necessary to consider the carrier relaxation time and spin-orbit coupling effect for determining reliable TE property. Overall, we propose that the p-type GaTe have outstanding TE property, and it can be utilized for potential TE device applications.
Collapse
Affiliation(s)
- Brahim Marfoua
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
| | - Jisang Hong
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
| |
Collapse
|
16
|
Maity N, Srivastava P, Mishra H, Shinde R, Singh AK. Anisotropic Interlayer Exciton in GeSe/SnS van der Waals Heterostructure. J Phys Chem Lett 2021; 12:1765-1771. [PMID: 33570941 DOI: 10.1021/acs.jpclett.0c03469] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Stacking two or more two-dimensional materials to form a heterostructure is becoming the most effective way to generate new functionalities for specific applications. Herein, using GW and Bethe-Salpeter equation simulations, we demonstrate the generation of linearly polarized, anisotropic intra- and interlayer excitonic bound states in the transition metal monochalcogenide (TMC) GeSe/SnS van der Waals heterostructure. The puckered structure of TMC results in the directional anisotropy in band structure and in the excitonic bound state. Upon the application of compressive/tensile biaxial strain dramatic variation (∓3%) in excitonic energies, the indirect-to-direct semiconductor transition and the red/blue shift of the optical absorption spectrum are observed. The variations in excitonic energies and optical band gap have been attributed to the change in effective dielectric constant and band dispersion upon the application of biaxial strain. The generation and control over the interlayer excitonic energies can find applications in optoelectronics and optical quantum computers and as a gain medium in lasers.
Collapse
Affiliation(s)
- Nikhilesh Maity
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Pooja Srivastava
- Amity School of Applied Sciences, Amity University Uttar Pradesh, Lucknow, Uttar Pradesh 226010, India
| | - Himani Mishra
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Ravindra Shinde
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | | |
Collapse
|
17
|
Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
Collapse
Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| |
Collapse
|
18
|
First principles study of structural, optoelectronic and photocatalytic properties of SnS, SnSe monolayers and their van der Waals heterostructure. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2020.110939] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
|
19
|
Bianca G, Zappia MI, Bellani S, Sofer Z, Serri M, Najafi L, Oropesa-Nuñez R, Martín-García B, Hartman T, Leoncino L, Sedmidubský D, Pellegrini V, Chiarello G, Bonaccorso F. Liquid-Phase Exfoliated GeSe Nanoflakes for Photoelectrochemical-Type Photodetectors and Photoelectrochemical Water Splitting. ACS APPLIED MATERIALS & INTERFACES 2020; 12:48598-48613. [PMID: 32960559 PMCID: PMC8011798 DOI: 10.1021/acsami.0c14201] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2020] [Accepted: 09/22/2020] [Indexed: 05/29/2023]
Abstract
Photoelectrochemical (PEC) systems represent powerful tools to convert electromagnetic radiation into chemical fuels and electricity. In this context, two-dimensional (2D) materials are attracting enormous interest as potential advanced photo(electro)catalysts and, recently, 2D group-IVA metal monochalcogenides have been theoretically predicted to be water splitting photocatalysts. In this work, we use density functional theory calculations to theoretically investigate the photocatalytic activity of single-/few-layer GeSe nanoflakes for both the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) in pH conditions ranging from 0 to 14. Our simulations show that GeSe nanoflakes with different thickness can be mixed in the form of nanoporous films to act as nanoscale tandem systems, in which the flakes, depending on their thickness, can operate as HER- and/or OER photocatalysts. On the basis of theoretical predictions, we report the first experimental characterization of the photo(electro)catalytic activity of single-/few-layer GeSe flakes in different aqueous media, ranging from acidic to alkaline solutions: 0.5 M H2SO4 (pH 0.3), 1 M KCl (pH 6.5), and 1 M KOH (pH 14). The films of the GeSe nanoflakes are fabricated by spray coating GeSe nanoflakes dispersion in 2-propanol obtained through liquid-phase exfoliation of synthesized orthorhombic (Pnma) GeSe bulk crystals. The PEC properties of the GeSe nanoflakes are used to design PEC-type photodetectors, reaching a responsivity of up to 0.32 AW-1 (external quantum efficiency of 86.3%) under 455 nm excitation wavelength in acidic electrolyte. The obtained performances are superior to those of several self-powered and low-voltage solution-processed photodetectors, approaching that of self-powered commercial UV-Vis photodetectors. The obtained results inspire the use of 2D GeSe in proof-of-concept water photoelectrolysis cells.
Collapse
Affiliation(s)
- Gabriele Bianca
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- Dipartimento
di Chimica e Chimica Industriale, Università
degli Studi di Genova, via Dodecaneso 31, 16146 Genoa, Italy
| | - Marilena I. Zappia
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C 87036 Rende, Cosenza, Italy
| | | | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Michele Serri
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
| | - Leyla Najafi
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| | - Reinier Oropesa-Nuñez
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
- Department
of Materials Science and Engineering, Uppsala
University, Box 534, 75121 Uppsala, Sweden
| | - Beatriz Martín-García
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- CIC
nanoGUNE, 20018 Donostia-San Sebastian, Spain
| | - Tomáš Hartman
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Luca Leoncino
- Electron
Microscopy Facility, Istituto Italiano di
Tecnologia, via Morego 30, 16163 Genova, Italy
| | - David Sedmidubský
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Vittorio Pellegrini
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| | - Gennaro Chiarello
- Department
of Physics, University of Calabria, Via P. Bucci cubo 31/C 87036 Rende, Cosenza, Italy
| | - Francesco Bonaccorso
- Graphene
Labs, Istituto Italiano di Tecnologia, via Morego 30, 16163, Genova, Italy
- BeDimensional
Societa per azioni, via
Albisola 121, 16163 Genova, Italy
| |
Collapse
|
20
|
Lv B, Hu X, Liu X, Zhang Z, Song J, Luo Z, Gao Z. Thermal transport properties of novel two-dimensional CSe. Phys Chem Chem Phys 2020; 22:17833-17841. [PMID: 32744552 DOI: 10.1039/d0cp02298e] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
Abstract
Recently, as a novel member of the IV-VI group compounds, two-dimensional (2D) buckled monolayer CSe has been discovered for use in high-performance light-emitting devices (Q. Zhang, Y. Feng, X. Chen, W. Zhang, L. Wu and Y. Wang, Nanomaterials, 2019, 9, 598). However, to date, the heat transport properties of this novel CSe is still lacking, which would hinder its potential application in electronic devices and thermoelectric materials that can generate electricity from waste heat. Here we systematically study the heat transport properties of monolayer CSe based on ab initio calculations and phonon Boltzmann transport theory. We find that the lattice thermal conductivity κlat of monolayer CSe is around 42 W m-1 K-1 at room temperature, which is much lower than those of black phosphorene, buckled phosphorene, MoS2, and buckled arsenene. Moreover, the longitudinal acoustic phonon mode contributes the most to the κlat, which is much larger than those of the out-of-plane phonon mode and transverse acoustic branches. The calculated size-dependent κlat shows that the sample size can significantly reduce the κlat of monolayer CSe and can persist up to 10 μm. These discoveries provide new insight into the size-dependent thermal transport in nanomaterials and guide the design of CSe-based low-dimensional quantum devices, such as thermoelectric devices.
Collapse
Affiliation(s)
- Bing Lv
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China and Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Xiaona Hu
- School of Biological Sciences, Guizhou Education University, Guiyang 550018, China
| | - Xuefei Liu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China and Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Zhaofu Zhang
- Department of Engineering, Cambridge University, Cambridge, CB2 1PZ, UK
| | - Jia Song
- Shanghai Engineering Research Center of 3D Printing Materials, Shanghai Research Institute of Materials, Shanghai 200437, China
| | - Zijiang Luo
- School of Information, Guizhou University of Finance and Economics, Guiyang 550025, China
| | - Zhibin Gao
- Department of Physics, National University of Singapore, Singapore, 117551, Republic of Singapore.
| |
Collapse
|
21
|
Zhang S, Niu X, Xie Y, Gong K, Shao H, Hu Y, Wang Y. High intrinsic ZT in InP 3 monolayer at room temperature. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:365501. [PMID: 31125982 DOI: 10.1088/1361-648x/ab249b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional thermoelectric (TE) materials which have the figure of merit ZT that is greater than 1.5 at room temperature would be highly desirable in energy conversion since the efficiency is competitive to conventional energy conversion techniques. Here, we report that the indium triphosphide (InP3) monolayer shows a large ZT of 1.92 at 300 K, based on the quantum calculations within the ballistic thermal transport region. A remarkably low and isotropic phononic thermal conductivity is found due to the flat lattice vibration modes, which takes a major responsibility for the impressively high ZT at room temperature. Moreover, a large ZT of 1.67 can still be achieved even under a 1% mechanical tension on the lattice. These results suggest that the InP3 monolayer is a promising candidate for low dimensional TE applications.
Collapse
Affiliation(s)
- Shenghui Zhang
- Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234, People's Republic of China. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | | | | | | | | | | | | |
Collapse
|
22
|
Hu Z, Ding Y, Hu X, Zhou W, Yu X, Zhang S. Recent progress in 2D group IV-IV monochalcogenides: synthesis, properties and applications. NANOTECHNOLOGY 2019; 30:252001. [PMID: 30776787 DOI: 10.1088/1361-6528/ab07d9] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Coordination-related, 2D structural phase transitions are a fascinating facet of 2D materials with structural degeneracy. Phosphorene and its new phases, exhibiting unique electronic properties, have received considerable attention. The 2D group IV-IV monochalcogenides (i.e. GeS, GeSe, SnS and SnSe) like black phosphorous possess puckered layered orthorhombic structure. The 2D group IV-IV monochalcogenides with advantages of earth-abundance, less toxicity, environmental compatibility and chemical stability, can be widely used in optoelectronics, piezoelectrics, photodetectors, sensors, Li-batteries and thermoelectrics. In this review, we summarized recent research progress in theory and experiment, which studies the fundamental properties, applications and fabrication of 2D group IV-IV monochalcogenides and their new phases, and brings new perspectives and challenges for the future of this emerging field.
Collapse
Affiliation(s)
- Ziyu Hu
- College of Science, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | | | | | | | | | | |
Collapse
|
23
|
Abstract
For the purpose of exploring the application of two-dimensional (2D) material in the field of gas sensors, the adsorption properties of gas molecules, CO, CO2, CH2O, O2, NO2, and SO2 on the surface of monolayered tin selenium in β phase (β-SnSe) has been researched by first principles calculation based on density functional theory (DFT). The results indicate that β-SnSe sheet presents weak physisorption for CO and CO2 molecules with small adsorption energy and charge transfers, which show that a β-SnSe sheet is not suitable for sensing CO and CO2. The adsorption behavior of CH2O molecules adsorbed on a β-SnSe monolayer is stronger than that of CO and CO2, revealing that the β-SnSe layer can be applied to detect CH2O as physical sensor. Additionally, O2, NO2, and SO2 are chemically adsorbed on a β-SnSe monolayer with moderate adsorption energy and considerable charge transfers. All related calculations reveal that β-SnSe has a potential application in detecting and catalyzing O2, NO2, and SO2 molecules.
Collapse
|
24
|
|
25
|
Zhang Q, Feng Y, Chen X, Zhang W, Wu L, Wang Y. Designing a Novel Monolayer β-CSe for High Performance Photovoltaic Device: An Isoelectronic Counterpart of Blue Phosphorene. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E598. [PMID: 30979008 PMCID: PMC6523863 DOI: 10.3390/nano9040598] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2019] [Revised: 04/05/2019] [Accepted: 04/06/2019] [Indexed: 01/30/2023]
Abstract
Using the first-principles method, an unmanufactured structure of blue-phosphorus-like monolayer CSe (β-CSe) was predicted to be stable. Slightly anisotropic mechanical characteristics in β-CSe sheet were discovered: it can endure an ultimate stress of 5.6 N/m at 0.1 along an armchair direction, and 5.9 N/m at 0.14 along a zigzag direction. A strain-sensitive transport direction was found in β-CSe, since β-CSe, as an isoelectronic counterpart of blue phosphorene (β-P), also possesses a wide indirect bandgap that is sensitive to the in-plane strain, and its carrier effective mass is strain-dependent. Its indirect bandgap character is robust, except that armchair-dominant strain can drive the indirect-direct transition. We designed a heterojunction by the β-CSe sheet covering α-CSe sheet. The band alignment of the α-CSe/β-CSe interface is a type-II van der Waals p-n heterojunction. An appreciable built-in electric field across the interface, which is caused by the charges transfering from β-CSe slab to α-CSe, renders energy bands bending, and it makes photo-generated carriers spatially well-separated. Accordingly, as a metal-free photocatalyst, α-CSe/β-CSe heterojunction was endued an enhanced solar-driven redox ability for photocatalytic water splitting via lessening the electron-hole-pair recombination. This study provides a fundamental insight regarding the designing of the novel structural phase for high-performance light-emitting devices, and it bodes well for application in photocatalysis.
Collapse
Affiliation(s)
- Qiang Zhang
- Key Laboratory of Nuclear Physics and Ion-beam Application (MOH), Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| | - Yajuan Feng
- Key Laboratory of Nuclear Physics and Ion-beam Application (MOH), Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| | - Xuanyu Chen
- Key Laboratory of Nuclear Physics and Ion-beam Application (MOH), Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| | - Weiwei Zhang
- Key Laboratory of Nuclear Physics and Ion-beam Application (MOH), Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| | - Lu Wu
- The First Sub⁻Institute, Nuclear Power Institute of China, Chengdu 610005, China.
| | - Yuexia Wang
- Key Laboratory of Nuclear Physics and Ion-beam Application (MOH), Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| |
Collapse
|
26
|
Dai X, Liang Y, Zhao Y, Gan S, Jia Y, Xiang Y. Sensitivity Enhancement of a Surface Plasmon Resonance with Tin Selenide (SnSe) Allotropes. SENSORS 2019; 19:s19010173. [PMID: 30621301 PMCID: PMC6339051 DOI: 10.3390/s19010173] [Citation(s) in RCA: 30] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/10/2018] [Revised: 12/29/2018] [Accepted: 01/03/2019] [Indexed: 11/17/2022]
Abstract
Single layers of tin selenide (SnSe), which have a similar structure as graphene and phosphorene, also show excellent optoelectronic properties, and have received much attention as a two-dimensional (2D) material beyond other 2D material family members. Surface plasmon resonance (SPR) sensors based on three monolayer SnSe allotropes are investigated with the transfer matrix method. The simulated results have indicated that the proposed SnSe-containing biochemical sensors are suitable to detect different types of analytes. Compared with the conventional Ag-only film biochemical sensor whose sensitivity is 116°/RIU, the sensitivities of these SnSe-based biochemical sensors containing α-SnSe, δ-SnSe, ε-SnSe, were obviously increased to 178°/RIU, 156°/RIU and 154°/RIU, respectively. The diverse biosensor sensitivities achieved with these three SnSe allotropes suggest that these 2D materials can adjust SPR sensor properties.
Collapse
Affiliation(s)
- Xiaoyu Dai
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technoloy of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
- Laboratory of Advanced Material Photonics (LAMPs), Shenzhen University, Shenzhen 518060, China.
| | - Yanzhao Liang
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technoloy of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
- Laboratory of Advanced Material Photonics (LAMPs), Shenzhen University, Shenzhen 518060, China.
| | - Yuting Zhao
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technoloy of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
- Laboratory of Advanced Material Photonics (LAMPs), Shenzhen University, Shenzhen 518060, China.
| | - Shuaiwen Gan
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technoloy of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
- Laboratory of Advanced Material Photonics (LAMPs), Shenzhen University, Shenzhen 518060, China.
| | - Yue Jia
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technoloy of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
- Laboratory of Advanced Material Photonics (LAMPs), Shenzhen University, Shenzhen 518060, China.
| | - Yuanjiang Xiang
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technoloy of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
- Laboratory of Advanced Material Photonics (LAMPs), Shenzhen University, Shenzhen 518060, China.
| |
Collapse
|
27
|
Ul Haq B, AlFaify S, Laref A. Design and characterization of novel polymorphs of single-layered tin-sulfide for direction-dependent thermoelectric applications using first-principles approaches. Phys Chem Chem Phys 2019; 21:4624-4632. [DOI: 10.1039/c8cp07645f] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Advanced computational approaches have made the design and characterization of novel two-dimensional (2D) materials possible for applications in cutting-edge technologies.
Collapse
Affiliation(s)
- Bakhtiar Ul Haq
- Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University
- Abha
- Saudi Arabia
| | - S. AlFaify
- Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University
- Abha
- Saudi Arabia
| | - A. Laref
- Department of Physics and Astronomy, College of Science, King Saud University
- Riyadh
- Saudi Arabia
| |
Collapse
|
28
|
Rashid Z, Nissimagoudar AS, Li W. Phonon transport and thermoelectric properties of semiconducting Bi2Te2X (X = S, Se, Te) monolayers. Phys Chem Chem Phys 2019; 21:5679-5688. [DOI: 10.1039/c8cp05793a] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Confinement or dimensionality reduction is a novel strategy to reduce the lattice thermal conductivity and, consequently, to improve the thermoelectric conversion performance.
Collapse
Affiliation(s)
- Zahid Rashid
- Institute for Advanced Study
- Shenzhen University
- Shenzhen 518060
- China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province
| | - Arun S. Nissimagoudar
- Institute for Advanced Study
- Shenzhen University
- Shenzhen 518060
- China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province
| | - Wu Li
- Institute for Advanced Study
- Shenzhen University
- Shenzhen 518060
- China
| |
Collapse
|
29
|
Zhang Q, Xin T, Lu X, Wang Y. Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure. MATERIALS 2018; 11:ma11030431. [PMID: 29547504 PMCID: PMC5873010 DOI: 10.3390/ma11030431] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2018] [Revised: 03/12/2018] [Accepted: 03/14/2018] [Indexed: 11/05/2022]
Abstract
We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.
Collapse
Affiliation(s)
- Qiang Zhang
- Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| | - Tianyuan Xin
- Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| | - Xiaoke Lu
- Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| | - Yuexia Wang
- Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Fudan University, Shanghai 200433, China.
| |
Collapse
|