Work function and temperature dependence of electron tunneling through an N-type perylene diimide molecular junction with isocyanide surface linkers

CP-AFM Molecular Tunnel Junctions with Alkyl Backbones Anchored Using Alkynyl and Thiol Groups: Microscopically Different Despite Phenomenological Similarity

In this paper, we report results on the electronic structure and transport properties of molecular junctions fabricated via conducting probe atomic force microscopy (CP-AFM) using self-assembled monolayers (SAMs) of n-alkyl chains anchored with acetylene groups (CnA; n = 8, 9, 10, and 12) on Ag, Au, and Pt electrodes. We found that the current-voltage (I-V) characteristics of CnA CP-AFM junctions can be very accurately reproduced by the same off-resonant single-level model (orSLM) successfully utilized previously for many other junctions. We demonstrate that important insight into the energy-level alignment can be gained from experimental data of transport (processed via the orSLM) and ultraviolet photoelectron spectroscopy combined with ab initio quantum chemical information based on the many-body outer valence Green's function method. Measured conductance GAg < GAu < GPt is found to follow the same ordering as the metal work function ΦAu < ΦAu < ΦPt, a fact that points toward a transport mediated by an occupied molecular orbital (MO). Still, careful data analysis surprisingly revealed that transport is not dominated by the ubiquitous HOMO but rather by the HOMO-1. This is an important difference from other molecular tunnel junctions with p-type HOMO-mediated conduction investigated in the past, including the alkyl thiols (CnT) to which we refer in view of some similarities. Furthermore, unlike in CnT and other junctions anchored with thiol groups investigated in the past, the AFM tip causes in CnA an additional MO shift, whose independence of size (n) rules out significant image charge effects. Along with the prevalence of the HOMO-1 over the HOMO, the impact of the "second" (tip) electrode on the energy level alignment is another important finding that makes the CnA and CnT junctions different. What ultimately makes CnA unique at the microscopic level is a salient difference never reported previously, namely, that CnA's alkyne functional group gives rise to two energetically close (HOMO and HOMO-1) orbitals. This distinguishes the present CnA from the CnT, whose HOMO stemming from its thiol group is well separated energetically from the other MOs.

Reply to the 'Comment on "A single level tunneling model for molecular junctions: evaluating the simulation methods"' by I Baldea, Phys. Chem. Chem. Phys., 2024, , D2CP05110A (http://D2CP05110A)

We respond to the recent comment by Dr. Ion Bâldea concerning our work, "A single level tunneling model for molecular junctions: evaluating the simulation methods [E. M. Opodi et al.,Phys. Chem. Chem. Phys., 2022, 24, 11958]". Dr. Bâldea has raised concerns about the applicability map we developed based on the comparison study of the 3 analytical models used in the study of molecular electronics. In our response, we have dissected Dr. Bâldea's critique into four primary points. For each, we have provided comprehensive replies that address and rectify the misinterpretations of our initial study. We'd like to thank Dr. Ion Bâldea for his comments, which have resulted in further clarification of the applicability of the analytical models for the study of molecular electronics.

Comment on "A single level tunneling model for molecular junctions: evaluating the simulation methods" by E. M. Opodi, X. Song, X. Yu and W. Hu, Phys. Chem. Chem. Phys., 2022, , 11958"

The present Comment demonstrates important flaws of the paper Opodi et al. Phys. Chem. Chem. Phys., 2022, 24, 11958 Their crown result ("applicability map") aims at indicating parameter ranges wherein two approximate methods (called method 2 and 3) apply. My calculations reveal that the applicability map is a factual error. Deviations of I2 from the exact current I1 do not exceed 3% for model parameters where Opodi et al. claimed that method 2 is inapplicable. As for method 3, the parameter range of the applicability map is beyond its scope, as stated in papers cited by Opodi et al. themselves.

Can tunneling current in molecular junctions be so strongly temperature dependent to challenge a hopping mechanism? Analytical formulas answer this question and provide important insight into large area junctions

Analytical equations like Richardson-Dushman's or Shockley's provided a general, if simplified conceptual background, which was widely accepted in conventional electronics and made a fundamental contribution to advances in the field. In the attempt to develop a (highly desirable, but so far missing) counterpart for molecular electronics, in this work, we deduce a general analytical formula for the tunneling current through molecular junctions mediated by a single level that is valid for any bias voltage and temperature. Starting from this expression, which is exact and obviates cumbersome numerical integration, in the low and high temperature limits we also provide analytical formulas expressing the current in terms of elementary functions. They are accurate for broad model parameter ranges relevant for real molecular junctions. Within this theoretical framework we show that: (i) by varying the temperature, the tunneling current can vary by several orders of magnitude, thus debunking the myth that a strong temperature dependence of the current is evidence for a hopping mechanism, (ii) real molecular junctions can undergo a gradual (Sommerfeld-Arrhenius) transition from a weakly temperature dependent to a strongly ("exponential") temperature dependent current that can be tuned by the applied bias, and (iii) important insight into large area molecular junctions with eutectic gallium indium alloy (EGaIn) top electrodes can be gained. E.g., merely based on transport data, we estimate that the current carrying molecules represent only a fraction of f ≈ 4 × 10-4 out of the total number of molecules in a large area Au-S-(CH2)13-CH3/EGaIn junction.

Near-Temperature-Independent Electron Transport Well beyond Expected Quantum Tunneling Range via Bacteriorhodopsin Multilayers

A key conundrum of biomolecular electronics is efficient electron transport (ETp) through solid-state junctions up to 10 nm, often without temperature activation. Such behavior challenges known charge transport mechanisms, especially via nonconjugated molecules such as proteins. Single-step, coherent quantum-mechanical tunneling proposed for ETp across small protein, 2-3 nm wide junctions, but it is problematic for larger proteins. Here we exploit the ability of bacteriorhodopsin (bR), a well-studied, 4-5 nm long membrane protein, to assemble into well-defined single and multiple bilayers, from ∼9 to 60 nm thick, to investigate ETp limits as a function of junction width. To ensure sufficient signal/noise, we use large area (∼10-3 cm2) Au-protein-Si junctions. Photoemission spectra indicate a wide energy separation between electrode Fermi and the nearest protein-energy levels, as expected for a polymer of mostly saturated components. Junction currents decreased exponentially with increasing junction width, with uniquely low length-decay constants (0.05-0.5 nm-1). Remarkably, even for the widest junctions, currents are nearly temperature-independent, completely so below 160 K. While, among other things, the lack of temperature-dependence excludes, hopping as a plausible mechanism, coherent quantum-mechanical tunneling over 60 nm is physically implausible. The results may be understood if ETp is limited by injection into one of the contacts, followed by more efficient charge propagation across the protein. Still, the electrostatics of the protein films further limit the number of charge carriers injected into the protein film. How electron transport across dozens of nanometers of protein layers is more efficient than injection defines a riddle, requiring further study.

Can room-temperature data for tunneling molecular junctions be analyzed within a theoretical framework assuming zero temperature?

Routinely, experiments on tunneling molecular junctions report values of conductances (G_RT) and currents (I_RT) measured at room temperature. On the other hand, theoretical approaches based on simplified models provide analytic formulas for the conductance (G_0K) and current (I_0K) valid at zero temperature. Therefore, interrogating the applicability of the theoretical results deduced in the zero-temperature limit to real experimental situations at room temperature (i.e., G_RT ≈ G_0K and I_RT ≈ I_0K) is a relevant aspect. Quantifying the pertaining temperature impact on the transport properties computed within the ubiquitous single-level model with Lorentzian transmission is the specific aim of the present work. Comprehensive results are presented for broad ranges of the relevant parameters (level's energy offset ε₀ and width Γ_a, and applied bias V) that safely cover values characterizing currently fabricated junctions. They demonstrate that the strongest thermal effects occur at biases below resonance (2|ε₀| - δε₀ - 0.3 ≲ |eV| - 0.3 ≲ 2|ε₀|). At fixed V, they affect an ε₀-range whose largest width δε₀ is about nine times larger than the thermal energy (δε₀ ≈ 3πk_BT) at Γ_a → 0. The numerous figures included aim to convey a quick overview on the applicability of the zero-temperature limit to a specific real junction. In quantitative terms, the conditions of applicability are expressed as mathematical inequalities involving elementary functions. They constitute the basis of a proposed interactive data-fitting procedure, which aims to guide experimentalists interested in data processing in a specific case.

Chemical Conformation Induced Transport Carrier Switching in Molecular Junction based on Carboxylic-Terminated Thiol Molecules

The paper demonstrates the effect of the chemical conformation of the -COOH group on the transport characteristic including conductance, rectification, and length effect in molecular junctions (MJs) formed by self-assembled monolayers of carboxylic-terminated thiol molecules. For an alkyl chain shorter than C₁₁, the transport mechanism was attributed to a direct off-resonant tunneling of a hole carrier, located at the Au-S interface, whereas a hopping mechanism was assigned to the alkyl chain longer than the C₁₁ chain located at the -COOH group. The hopping mechanism may be operated by electron transport associated with the breaking of the -OH bonding likely driven by a voltage. Importantly, at the C₁₁ alkyl chain, we observed that the transport carrier operating in MJs could change from a hole carrier into an electron carrier. The result strongly proves that the chemical conformation should be considered in analyzing molecular electronics and provides a basis for the rational design of molecular electronic devices.

Estimating the Number of Molecules in Molecular Junctions Merely Based on the Low Bias Tunneling Conductance at Variable Temperature

Temperature (T) dependent conductance G=G(T) data measured in molecular junctions are routinely taken as evidence for a two-step hopping mechanism. The present paper emphasizes that this is not necessarily the case. A curve of lnG versus 1/T decreasing almost linearly (Arrhenius-like regime) and eventually switching to a nearly horizontal plateau (Sommerfeld regime), or possessing a slope gradually decreasing with increasing 1/T is fully compatible with a single-step tunneling mechanism. The results for the dependence of G on T presented include both analytical exact and accurate approximate formulas and numerical simulations. These theoretical results are general, also in the sense that they are not limited, e.g., to the (single molecule electromigrated (SET) or large area EGaIn) fabrication platforms, which are chosen for exemplification merely in view of the available experimental data needed for analysis. To be specific, we examine in detail transport measurements for molecular junctions based on ferrocene (Fc). As a particularly important finding, we show how the present analytic formulas for G=G(T) can be utilized to compute the ratio f=Aeff/An between the effective and nominal areas of large area Fc-based junctions with an EGaIn top electrode. Our estimate of f≈0.6×10-4 is comparable with previously reported values based on completely different methods for related large area molecular junctions.

Temperature-Dependent Coherent Tunneling across Graphene-Ferritin Biomolecular Junctions

Understanding the mechanisms of charge transport (CT) across biomolecules in solid-state devices is imperative to realize biomolecular electronic devices in a predictive manner. Although it is well-accepted that biomolecule-electrode interactions play an essential role, it is often overlooked. This paper reveals the prominent role of graphene interfaces with Fe-storing proteins in the net CT across their tunnel junctions. Here, ferritin (AfFtn-AA) is adsorbed on the graphene by noncovalent amine-graphene interactions confirmed with Raman spectroscopy. In contrast to junctions with metal electrodes, graphene has a vanishing density of states toward its intrinsic Fermi level ("Dirac point"), which increases away from the Fermi level. Therefore, the amount of charge carriers is highly sensitive to temperature and electrostatic charging (induced doping), as deduced from a detailed analysis of CT as a function of temperature and iron loading. Remarkably, the temperature dependence can be fully explained within the coherent tunneling regime due to excitation of hot carriers. Graphene is not only demonstrated as an alternative platform to study CT across biomolecular tunnel junctions, but it also opens rich possibilities in employing interface electrostatics in tuning CT behavior.

Empirical Parameter to Compare Molecule-Electrode Interfaces in Large-Area Molecular Junctions

This paper describes a simple model for comparing the degree of electronic coupling between molecules and electrodes across different large-area molecular junctions. The resulting coupling parameter can be obtained directly from current–voltage data or extracted from published data without fitting. We demonstrate the generalizability of this model by comparing over 40 different junctions comprising different molecules and measured by different laboratories. The results agree with existing models, reflect differences in mechanisms of charge transport and rectification, and are predictive in cases where experimental limitations preclude more sophisticated modeling. We also synthesized a series of conjugated molecular wires, in which embedded dipoles are varied systematically and at both molecule–electrode interfaces. The resulting current–voltage characteristics vary in nonintuitive ways that are not captured by existing models, but which produce trends using our simple model, providing insights that are otherwise difficult or impossible to explain. The utility of our model is its demonstrative generalizability, which is why simple observables like tunneling decay coefficients remain so widely used in molecular electronics despite the existence of much more sophisticated models. Our model is complementary, giving insights into molecule–electrode coupling across series of molecules that can guide synthetic chemists in the design of new molecular motifs, particularly in the context of devices comprising large-area molecular junctions.

A single level tunneling model for molecular junctions: evaluating the simulation methods

A single level tunneling model has been the most popular model system in both experimental and theoretical studies of molecular junctions. We performed a detailed simulation study on the performance of the single level tunneling model for analyzing the charge transport in molecular junctions. Three different modeling methods, including the numerical integration of the Landauer formula and two approximated analytical formulas that are extensively used for extracting key transport parameters, i.e. the energy offset and the coupling strength between molecules and electrodes from current-voltage (I-V) characteristics were compared and evaluated for their applicability. The simulation of I-V plots shows that the applicability of the two approximated analytical models is dependent on the energy offset and coupling strength. Model analysis based on the three methods performed on experimental data obtained from representative literature papers revealed that the two approximated analytical methods are neither suitable for small coupling strength nor suitable for low energy offset, and they also deviated from the exact results at high bias. These results imply that the transport parameters by the model analysis can be wrong if the models were not correctly applied under their intrinsic constraints, therefore providing wrong physical information about the system. We finally provided an applicability map as a guide for different modeling methods for charge transport studies in molecular devices.

Modulating the Conduction Band Energies of Si Electrode Interfaces Functionalized with Monolayers of a Bay-Substituted Perylene Bisimide

The confinement of π-conjugated chromophores on silicon (Si) electrode surfaces is a powerful approach to engineer electroresponsive monolayers relevant to microelectronics, electrocatalysis, and information storage and processing. While common strategies to functionalize Si interfaces exploit molecularly dissolved building blocks, only a handful number of studies have leveraged the structure-function relationships of π-aggregates to tune the electronic structures of hybrid monolayers at Si interfaces. Herein, we show that the semiconducting properties of n-type monolayers constructed on Si electrodes are intimately correlated to the initial aggregation state of π-conjugated chromophore precursors derived from bay-substituted perylene bisimide (PBI) units. Specifically, our study unravels that for n-type monolayers engineered using PBI π-aggregates, the cathodic reduction potentials required to inject negative charge carriers into the conduction bands can be stabilized by 295 mV through reversible switching of the maximum anodic potential (MAP) that is applied during the oxidative cycles (+0.5 or +1.5 V vs Ag/AgCl). This redox-assisted stabilization effect is not observed with n-type monolayers derived from molecularly dissolved PBI cores and monolayers featuring a low surface density of the redox-active probes. These findings unequivocally point to the crucial role played by PBI π-aggregates in modulating the conduction band energies of n-type monolayers where a high MAP of +1.5 V enables the formation of electronic trap states that facilitate electron injection when sweeping back to cathodic potentials. Because the structure-function relationships of PBI π-aggregates are shown to modulate the semiconducting properties of hybrid n-type monolayers constructed at Si interfaces, our results hold promising opportunities to develop redox-switchable monolayers for engineering nonvolatile electronic memory devices.

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

The performance of nanoelectronic and molecular electronic devices relies strongly on the employed functional units and their addressability, which is often a matter of appropriate interfaces and device design. Here, we compare two promising designs to build solid-state electronic devices utilizing the same functional unit. Optically addressable Ru-terpyridine complexes were incorporated in supramolecular wires or employed as ligands of gold nanoparticles and contacted by nanoelectrodes. The resulting small-area nanodevices were thoroughly electrically characterized as a function of temperature and light exposure. Differences in the resulting device conductance could be attributed to the device design and the respective transport mechanism, that is, thermally activated hopping conduction in the case of Ru-terpyridine wire devices or sequential tunneling in nanoparticle-based devices. Furthermore, the conductance switching of nanoparticle-based devices upon 530 nm irradiation was attributed to plasmon-induced metal-to-ligand charge transfer in the Ru-terpyridine complexes used as switching ligands. Finally, our results reveal a superior device performance of nanoparticle-based devices compared to molecular wire devices based on Ru-terpyridine complexes as functional units.

Charge Transport Characteristics of Molecular Electronic Junctions Studied by Transition Voltage Spectroscopy

The field of molecular electronics is prompted by tremendous opportunities for using a single-molecule and molecular monolayers as active components in integrated circuits. Until now, a wide range of molecular devices exhibiting characteristic functions, such as diodes, transistors, switches, and memory, have been demonstrated. However, a full understanding of the crucial factors that affect charge transport through molecular electronic junctions should yet be accomplished. Remarkably, recent advances in transition voltage spectroscopy (TVS) elucidate that it can provide key quantities for probing the transport characteristics of the junctions, including, for example, the position of the frontier molecular orbital energy relative to the electrode Fermi level and the strength of the molecule–electrode interactions. These parameters are known to be highly associated with charge transport behaviors in molecular systems and can then be used in the design of molecule-based devices with rationally tuned electronic properties. This article highlights the fundamental principle of TVS and then demonstrates its major applications to study the charge transport properties of molecular electronic junctions.

Quantifying Image Charge Effects in Molecular Tunnel Junctions Based on Self-Assembled Monolayers of Substituted Oligophenylene Ethynylene Dithiols

A number of factors contribute to orbital energy alignment with respect to the Fermi level in molecular tunnel junctions. Here, we report a combined experimental and theoretical effort to quantify the effect of metal image potentials on the highest occupied molecular orbital to Fermi level offset, ε_h, for molecular junctions based on self-assembled monolayers (SAMs) of oligophenylene ethynylene dithiols (OPX) on Au. Our experimental approach involves the use of both transport and photoelectron spectroscopy to extract the offsets, ε_h^trans and ε_h^UPS, respectively. We take the difference in these quantities to be the image potential energy eV_image. In the theoretical approach, we use density functional theory (DFT) to calculate directly eV_image between positive charge on an OPX molecule and the negative image charge in the Au. Both approaches yield eV_image ∼ -0.1 eV per metal contact, meaning that the total image potential energy is ∼-0.2 eV for an assembled junction with two Au contacts. Thus, we find that the total image potential energy is 25-30% of the total offset ε_h, which means that image charge effects are significant in OPX junctions. Our methods should be generally applicable to understanding image charge effects as a function of molecular size, for example, in a variety of SAM-based junctions.

Internal-electric-field induced high efficient type-I heterojunction in photocatalysis-self-Fenton reaction: Enhanced H2O2 yield, utilization efficiency and degradation performance

Herein, a type-I phosphorus-doped carbon nitride/oxygen-doped carbon nitride (P-C₃N₄/O-C₃N₄) heterojunction was designed for photocatalysis-self-Fenton reaction (photocatalytic H₂O₂ production and following Fenton reaction). In P-C₃N₄/O-C₃N₄, the photoinduced charge carriers were effectively separated with the help of internal-electric-field near the interface, ensuring the high catalytic performance. As a result, the production rate of H₂O₂ in an air-saturated solution was 179 μM·h^-1, about 7.2, 2.5, 2.5 and 2.1 times quicker than that on C₃N₄, P-C₃N₄, O-C₃N₄, and phosphorus and oxygen co-doped C₃N₄, respectively. By taking advantage of the cascade mode in photocatalysis-self-Fenton reaction, H₂O₂ utilization efficiency was remarkably improved to 77.7%, about 9.0 times higher than that of traditional homogeneous Fenton reaction. Befitting from the superior yield and utilization efficiency, the degradation performance of P-C₃N₄/O-C₃N₄ was undoubtedly superior than other photocatalysts. This work well addressed two bottlenecks in traditional Fenton reaction: source of H₂O₂ and their low utilization efficiency, and the findings were beneficial to understand the mechanism and advantage of the photocatalysis-self-Fenton system in environmental remediation.

Amine-Anchored Aromatic Self-Assembled Monolayer Junction: Structure and Electric Transport Properties

We studied the structure and transport properties of aromatic amine self-assembled monolayers (NH₂-SAMs) on an Au surface. The oligophenylene and oligoacene amines with variable lengths can form a densely packed and uniform monolayer under proper assembly conditions. Molecular junctions incorporating an eutectic Ga-In (EGaIn) top electrode were used to characterize the charge transport properties of the amine monolayer. The current density J of the junction decreases exponentially with the molecular length (d), as J = J₀ exp(-βd), which is a sign of tunneling transport, with indistinguishable values of J₀ and β for NH₂-SAMs of oligophenylene and oligoacene, indicating a similar molecule-electrode contact and tunneling barrier for two groups of molecules. Compared with the oligophenylene and oligoacene molecules with thiol (SH) as the anchor group, a similar β value (∼0.35 Å^-1) of the aromatic NH₂-SAM suggests a similar tunneling barrier, while a lower (by 2 orders of magnitude) injection current J₀ is attributed to lower electronic coupling Γ of the amine group with the electrode. These observations are further supported by single-level tunneling model fitting. Our study here demonstrates the NH₂-SAMs can work as an effective active layer for molecular junctions, and provide key physical parameters for the charge transport, paving the road for their applications in functional devices.

Quantitative analysis of weak current rectification in molecular tunnel junctions subject to mechanical deformation reveals two different rectification mechanisms for oligophenylene thiols versus alkane thiols

Metal-molecule-metal junctions based on alkane thiol (CnT) and oligophenylene thiol (OPTn) self-assembled monolayers (SAMs) and Au electrodes are expected to exhibit similar electrical asymmetry, as both junctions have one chemisorbed Au-S contact and one physisorbed, van der Waals contact. Asymmetry is quantified by the current rectification ratio RR apparent in the current-voltage (I-V) characteristics. Here we show that RR < 1 for CnT and RR > 1 for OPTn junctions, in contrast to expectation, and further, that RR behaves very differently for CnT and OPTn junctions under mechanical extension using the conducting probe atomic force microscopy (CP-AFM) testbed. The analysis presented in this paper, which leverages results from the previously validated single level model and ab initio quantum chemical calculations, allows us to explain the puzzling experimental findings for CnT and OPTn in terms of different current rectification mechanisms. Specifically, in CnT-based junctions the Stark effect creates the HOMO level shifting necessary for rectification, while for OPTn junctions the level shift arises from position-dependent coupling of the HOMO wavefunction with the junction electrostatic potential profile. On the basis of these mechanisms, our quantum chemical calculations allow quantitative description of the impact of mechanical deformation on the measured current rectification. Additionally, our analysis, matched to experiment, facilitates direct estimation of the impact of intramolecular electrostatic screening on the junction potential profile. Overall, our examination of current rectification in benchmark molecular tunnel junctions illuminates key physical mechanisms at play in single step tunneling through molecules, and demonstrates the quantitative agreement that can be obtained between experiment and theory in these systems.

Energy-Level Alignment and Orbital-Selective Femtosecond Charge Transfer Dynamics of Redox-Active Molecules on Au, Ag, and Pt Metal Surfaces

Charge transfer (CT) dynamics across metal-molecule interfaces has important implications for performance and function of molecular electronic devices. CT times, on the order of femtoseconds, can be precisely measured using synchrotron-based core-hole clock (CHC) spectroscopy, but little is known about the impact on CT times of the metal work function and the bond dipole created by metals and the anchoring group. To address this, here we measure CT dynamics across self-assembled monolayers bound by thiolate anchoring groups to Ag, Au, and Pt. The molecules have a terminal ferrocene (Fc) group connected by varying numbers of methylene units to a diphenylacetylene (DPA) wire. CT times measured using CHC with resonant photoemission spectroscopy (RPES) show that conjugated DPA wires conduct electricity faster than aliphatic carbon wires of a similar length. Shorter methylene connectors exhibit increased conjugation between Fc and DPA, facilitating CT by providing greater orbital mixing. We find nearly 10-fold increase in the CT time on Pt compared to Ag due to a larger bond dipole generated by partial electron transfer from the metal-sulfur bond to the carbon-sulfur bond, which creates an electrostatic field that impedes CT from the molecules. By fitting the RPES signal, we distinguish electrons coming from the Fe center and from cyclopentadienyl (Cp) rings. The latter shows faster CT rates because of the delocalized Cp orbitals. Our study demonstrates the fine tuning of CT rates across junctions by careful engineering of several parts of the molecule and the molecule-metal interface.

Reversal of the Direction of Rectification Induced by Fermi Level Pinning at Molecule-Electrode Interfaces in Redox-Active Tunneling Junctions

Control over the energy level alignment in molecular junctions is notoriously difficult, making it challenging to control basic electronic functions such as the direction of rectification. Therefore, alternative approaches to control electronic functions in molecular junctions are needed. This paper describes switching of the direction of rectification by changing the bottom electrode material M = Ag, Au, or Pt in M-S(CH₂)₁₁S-BTTF//EGaIn junctions based on self-assembled monolayers incorporating benzotetrathiafulvalene (BTTF) with EGaIn (eutectic alloy of Ga and In) as the top electrode. The stability of the junctions is determined by the choice of the bottom electrode, which, in turn, determines the maximum applied bias window, and the mechanism of rectification is dominated by the energy levels centered on the BTTF units. The energy level alignments of the three junctions are similar because of Fermi level pinning induced by charge transfer at the metal-thiolate interface and by a varying degree of additional charge transfer between BTTF and the metal. Density functional theory calculations show that the amount of electron transfer from M to the lowest unoccupied molecular orbital (LUMO) of BTTF follows the order Ag > Au > Pt. Junctions with Ag electrodes are the least stable and can only withstand an applied bias of ±1.0 V. As a result, no molecular orbitals can fall in the applied bias window, and the junctions do not rectify. The junction stability increases for M = Au, and the highest occupied molecular orbital (HOMO) dominates charge transport at a positive bias resulting in a positive rectification ratio of 83 at ±1.5 V. The junctions are very stable for M = Pt, but now the LUMO dominates charge transport at a negative bias resulting in a negative rectification ratio of 912 at ±2.5 V. Thus, the limitations of Fermi level pinning can be bypassed by a judicious choice of the bottom electrode material, making it possible to access selectively HOMO- or LUMO-based charge transport and, as shown here, associated reversal of rectification.

The Potential of X-ray Photoelectron Spectroscopy for Determining Interface Dipoles of Self-Assembled Monolayers

In the current manuscript we assess to what extent X-ray photoelectron spectroscopy (XPS) is a suitable tool for probing the dipoles formed at interfaces between self-assembled monolayers and metal substrates. To that aim, we perform dispersion-corrected, slab-type band-structure calculations on a number of biphenyl-based systems bonded to an Au(111) surface via different docking groups. In addition to changing the docking chemistry (and the associated interface dipoles), the impacts of polar tail group substituents and varying dipole densities are also investigated. We find that for densely packed monolayers the shifts of the peak positions of the simulated XP spectra are a direct measure for the interface dipoles. In the absence of polar tail group substituents they also directly correlate with adsorption-induced work function changes. At reduced dipole densities this correlation deteriorates, as work function measurements probe the difference between the Fermi level of the substrate and the electrostatic energy far above the interface, while core level shifts are determined by the local electrostatic energy in the region of the atom from which the photoelectron is excited.

Energy Level Alignment in Molecular Tunnel Junctions by Transport and Spectroscopy: Self-Consistency for the Case of Alkyl Thiols and Dithiols on Ag, Au, and Pt Electrodes

We report here an extensive study of transport and electronic structure of molecular junctions based on alkyl thiols (CnT; n = 7, 8, 9, 10, 12) and dithiols (CnDT; n = 8, 9, 10) with various lengths contacted with different metal electrodes (Ag, Au, Pt). The dependence of the low-bias resistance (R) on contact work function indicates that transport is HOMO-assisted (p-type transport). Analysis of the current-voltage (I-V) characteristics for CnT and CnDT tunnel junctions with the analytical single-level model (SLM) provides both the HOMO-Fermi energy offset ε_h^trans and the average molecule-electrode coupling (Γ) as a function of molecular length (n), electrode work function (Φ), and the number of chemical contacts (one or two). The SLM analysis reveals a strong Fermi level (E_F) pinning effect in all the junctions, i.e., ε_h^trans changes very little with n, Φ, and the number of chemical contacts, but Γ depends strongly on these variables. Significantly, independent measurements of the HOMO-Fermi level offset (ε_h^UPS) by ultraviolet photoelectron spectroscopy (UPS) for CnT and CnDT SAMs agree remarkably well with the transport-estimated ε_h^trans. This result provides strong evidence for hole transport mediated by localized HOMO states at the Au-thiol interface, and not by the delocalized σ states in the C-C backbones, clarifying a long-standing issue in molecular electronics. Our results also substantiate the application of the single-level model for quantitative, unified understanding of transport in benchmark molecular junctions.

Molecular Rectifiers on Silicon: High Performance by Enhancing Top-Electrode/Molecule Coupling

One of the simplest molecular-scale electronic devices is the molecular rectifier. In spite of considerable efforts aimed at understanding structure-property relationships in these systems, devices with predictable and stable electronic properties are yet to be developed. Here, we demonstrate highly efficient current rectification in a new class of compounds that form self-assembled monolayers on silicon. We achieve this by exploiting the coupling of the molecules with the top electrode which, in turn, controls the position of the relevant molecular orbitals. The molecules consist of a silane anchoring group and a nitrogen-substituted benzene ring, separated by a propyl group and imine linkage, and result from a simple, robust, and high-yield synthetic procedure. We find that when incorporated in molecular diodes, these compounds can rectify current by as much as 3 orders of magnitude, depending on their structure, with a maximum rectification ratio of 2635 being obtained in ( E)-1-(4-cyanophenyl)- N-(3-(triethoxysilyl) propyl)methanimine (average R_avg = 1683 ± 458, at an applied voltage of 2 V). This performance is on par with that of the best molecular rectifiers obtained on metallic electrodes, but it has the advantage of lower cost and more efficient integration with current silicon technologies. The development of molecular rectifiers on silicon may yield hybrid systems that can expand the use of silicon toward novel functionalities governed by the molecular species grafted onto its surface.

Transistor configuration yields energy level control in protein-based junctions

The incorporation of proteins as functional components in electronic junctions has received much interest recently due to their diverse bio-chemical and physical properties. However, information regarding the energies of the frontier orbitals involved in their electron transport (ETp) has remained elusive. Here we employ a new method to quantitatively determine the energy position of the molecular orbital, nearest to the Fermi level (EF) of the electrode, in the electron transfer protein Azurin. The importance of the Cu(ii) redox center of Azurin is demonstrated by measuring gate-controlled conductance switching which is absent if Azurin's copper ions are removed. Comparing different electrode materials, a higher conductance and a lower gate-induced current onset is observed for the material with smaller work function, indicating that ETp via Azurin is LUMO-mediated. We use the difference in work function to calibrate the difference in gate-induced current onset for the two electrode materials, to a specific energy level shift and find that ETp via Azurin is near resonance. Our results provide a basis for mapping and studying the role of energy level positions in (bio)molecular junctions.

A sui generis electrode-driven spatial confinement effect responsible for strong twisting enhancement of floppy molecules in closely packed self-assembled monolayers

At present, it is widely accepted that properties (e.g., molecular conformation) of molecules adsorbed to form self-assembled monolayers (SAMs) on electrodes can be very different from isolated species because of a substantial charge transfer or specific chemical bonding at the interface. Contrary to this view, the theoretical results presented here predict that the strong twisting angle (φ) enhancement of floppy molecules adsorbed to form densely packed SAMs on most common electrodes (Pt, Au, Ag, and Cu) is neither due to charge transfer nor to specific bonding but rather to a sui generis electrode-driven spatial confinement effect that can be quantitatively described within an electrode-free two-dimensional model. We predict a logistic ("Fermi-Dirac") growth pattern of φ as the coverage approaches the value characteristic of a herringbone arrangement, which is twice the value for isolated molecules or low-coverage SAMs.

Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates

We fabricated MoS₂-based flash memory devices by stacking MoS₂ and hexagonal boron nitride (hBN) layers on an hBN/Au substrate and demonstrated that these devices can emulate various biological synaptic functions, including potentiation and depression processes, spike-rate-dependent plasticity, and spike-timing dependent plasticity. In particular, compared to a flash memory device prepared on an hBN substrate, the device fabricated on the hBN/Au exhibited considerably more symmetric and linear bidirectional gradual conductance change curves, which may be attributed to the device structure incorporating double floating gate. For the device on the hBN/Au, electron transfers may occur between the floating gate MoS₂ and Au, as well as between the floating gate MoS₂ and the channel MoS₂, allowing for more control over electron tunneling and injection. To test our hypothesis, we also fabricated a MoS₂-based flash memory device on an hBN/Pd substrate and found behavior similar to the device fabricated on hBN/Au. Our results demonstrate that flexible synaptic electronics may be implemented using MoS₂-based flash memory devices with double floating gates.

Side-Group Effect on Electron Transport of Single Molecular Junctions

In this article, we have investigated the influence of the nitro side-group on the single molecular conductance of pyridine-based molecules by scanning tunneling microscopy break junction. Single molecular conductance of 4,4'-bipyridine (BPY), 3-nitro-4-(pyridin-4-yl)pyridine (BPY-N), and 3-nitro-4-(3-nitropyridin-4-yl)pyridine (BPY-2N) were measured by contact with Au electrodes. For the BPY molecular junction, two sets of conductance were found with values around 10-3.1 G₀ (high G) and 10-3.7 G₀ (low G). The addition of nitro side-group(s) onto the pyridine ring resulted in lower conductance of 10-3.8 G₀ for BPY-N and 10-3.9 G₀ for BPY-2N, respectively, which can be attributed to the twist angle of two pyridine rings. Moreover, the steric hindrance of nitro group(s) also affects the contacting configuration of electrode-molecule-electrode. As a consequence, only one set of conductance value was observed for BPY-N and BPY-2N. Our work clearly shows the important role of side-groups on the electron transport of single-molecule junctions.