Facile Strategy for Preparing a Rosin-Based Low-k Material: Molecular Design of Free Volume

Low-k dielectrics are urgently needed in modern integrated circuits. The introduction of free volume instead of porous structures has become a powerful strategy to reduce the k value. According to this strategy, the biomass resource rosin-containing hydrogenated phenanthrene ring was introduced into benzocyclobutene (BCB) resin to reduce the k value; then a rosin-based BCB monomer was successfully synthesized. Meanwhile, the BCB monomer without a rosin skeleton was prepared. After converting the monomers into thermo-crosslinked materials, notably that the rosin skeleton has a great influence on the free volume and k value of the material. The fractional free volume and k value of the former are 26% and 2.44, respectively, and those of the latter are 14% and 2.84, respectively. In addition, the distances between molecular chains and the density of the former are 0.60 nm and 1.06 g cm^-3, respectively; those of the latter are 0.56 nm and 1.28 g cm^-3, respectively. These data show that introducing hydrogenated phenanthrene rings occupies part of the space and hinders the packing of molecular chains, which increases the distance between molecular chains and reduces the density of the polymer, resulting in an increasing free volume and a reducing k value. Notably that introducing hydrogenated phenanthrene rings cannot affect other properties of the material. Therefore, this research indicates that introducing rosin skeletons can prepare high-performance materials, which provide some promising low-k materials for the development of electronics and microelectronics.

Low dielectric resins derived from hyperbranched carbosilane oligmers functionalized by benzocyclobutene groups

Polycarbosilanes have been considered as potential materials used in electronic packaging and circuit boards owing to their excellent low-dielectric performance. In this work, we prepared new hyperbranched carbosilane oligomers (HCBOs) which were functionalized by benzocyclobutene (BCB) groups. HCBOs can be thermally cured to produce transparent (HCBRs) with low dielectric constant and high thermostability.

A bio-based low dielectric material at a high frequency derived from resveratrol

An efficient strategy to design and synthesize a low dielectric material at a high frequency of 5 GHz derived from renewable resveratrol.

A fluoropolymer with a low dielectric constant at a high frequency derived from bio-based anethole

The copolymerization between a fluoro-containing monomer derived from bio-based anethole and a benzocyclobutene (BCB)-containing monomer gave a polymer with good dielectric properties and low water uptake.

A biobased low dielectric resin derived from vanillin and guaiacol

A new bio-based low dielectric resin derived from vanillin and guaiacol has been synthesized, which exhibits good dielectric properties and high thermostability.

Preparation and Properties of Novel Cross-Linked Fluorinated Poly(aryl ether) with Low Dielectric Constant and High Thermal Stability

Fluorinated poly(aryl ether)s (FPAEs) have attracted much attention due to their high thermal stability, excellent mechanical strength, and low dielectric constant. High-molecular-weight fluorinated poly(aryl ether) containing phenylethynyl (FPAE-PE) is successfully synthesized by nucleophilic substitution between 3-ethynylphenol and FPAE. The cross-linked fluorinated poly(aryl ether) (C-FPAE-PE) is prepared by thermal treatment of FPAE-PE at 300 °C. The thermal stability, dynamic thermomechanical property, and dielectric performance of C-FPAE-PE are systematically studied. C-FPAE-PE has excellent heat resistance with 5% weight loss temperature (T_d5% ) at 490 °C in air and high thermomechanical properties with storage modulus retention of 50% at 215 °C. C-FPAE-PE displays low and steady dielectric constant of 2.4 and dielectric loss of 0.004 at 215 °C, exhibiting potential applications in the field of microelectronics, communication technology, and energy storage as high-temperature low dielectric materials.

Annealing and Stretching Induced High Energy Storage Properties in All-Organic Composite Dielectric Films

High discharged energy density and charge⁻discharge efficiency, in combination with high electric breakdown strength, maximum electric displacement and low residual displacement, are very difficult to simultaneously achieve in single-component polymer dielectrics. Plenty of researches have reported polymer based composite dielectrics filled with inorganic fillers, through complex surface modification of inorganic fillers to improve interface compatibility. In this work, a novel strategy of introducing environmentally-friendly biological polyester into fluoropolymer matrix has been presented to prepare all-organic polymer composites with desirable high energy storage properties by solution cast process (followed by annealing or stretching post-treatment), in order to simplify the preparation steps and lower the cost. Fluoropolymer with substantial ferroelectric domains (contributing to high dielectric response) as matrix and poly (3-hydroxybutyrate-co-3-hydroxyvalerate) with excellent linear polarization property (resulting in high breakdown strength) as filler were employed. By high-temperature annealing, the size of ferroelectric domains could be improved and interfacial air defects could be removed, leading to elevated high energy storage density and efficiency in composite. By mono-directional stretching, the ferroelectric domains and polyester could be regularly oriented along stretching direction, resulting in desired high energy storage performances as well. Besides, linear dielectric components could contribute to high efficiency from their strong rigidity restrain effect on ferroelectric component. This work might open up the way for a facile fabrication of promising all-organic composite dielectric films with high energy storage properties.