1
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Wang X, Zhang X, Chen Y, Dong J, Zhao J. Optimizing Electron Spin-Polarized States of MoSe 2/Cr 2Se 3 Heterojunction-Embedded Carbon Nanospheres for Superior Sodium/Potassium-Ion Battery Performances. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2312130. [PMID: 38409470 DOI: 10.1002/smll.202312130] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2024] [Revised: 02/08/2024] [Indexed: 02/28/2024]
Abstract
The principal challenges faced by sodium-ion batteries (SIBs) and potassium-ion batteries (KIBs) revolve around identifying suitable host materials capable of accommodating metal ions with larger dimensions and addressing the issue of sluggish chemical kinetics. Herein, a MoSe2/Cr2Se3 heterojunction uniformly embedded is fabricated in nitrogen-doped hollow carbon nanospheres (MoSe2/Cr2Se3@N-HCSs) as an electrode material for SIBs and KIBs. Cr2Se3 exhibits spontaneous antiparallel alignment of magnetic moments. Mo2+ doping is employed to regulate the electron spin states of Cr2Se3. Moreover, the MoSe2 and Cr2Se3 heterojunctions induce a lattice mismatch at the heterostructure interface, resulting in spin-polarized states or localized magnetic moments at the interface, potentially contributing to spin-polarized surface capacitance. MoSe2/Cr2Se3@N-HCSs demonstrate a high capacity of 498 mAh g-1 at 0.1 A g-1 with good cycling stability (capacity of 405 mAh g-1 and a coulombic efficiency of 99.8% after 1000 cycles). Additionally, density functional theory (DFT) calculations simulate the accumulation of spin-polarized charges at the MoSe2/Cr2Se3@N-HCSs heterojunction interface, dependent on the surface electron density of the antiferromagnetic Cr2Se3 and the surface spin polarization near the Fermi level. After regulating the electron spin states through Mo-doping, the band gap of the material decreases. These significant findings provide novel insights into the design and synthesis of electrode materials with exceptional performance characteristics for batteries.
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Affiliation(s)
- Xianchao Wang
- Key Laboratory of Superlight Materials and Surface Technology of Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, China
| | - Xuan Zhang
- Key Laboratory of Superlight Materials and Surface Technology of Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, China
| | - Ye Chen
- Key Laboratory of Superlight Materials and Surface Technology of Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, China
| | - Jinqiao Dong
- School of Chemistry and Chemical Engineering, Frontiers Science Center for Transformative Molecules and State Key Laboratory of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jing Zhao
- Key Laboratory of Superlight Materials and Surface Technology of Ministry of Education, College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin, 150001, China
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2
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Fernandes J, Grzonka J, Araújo G, Schulman A, Silva V, Rodrigues J, Santos J, Bondarchuk O, Ferreira P, Alpuim P, Capasso A. Bipolar Resistive Switching in 2D MoSe 2 Grown by Atmospheric Pressure Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1767-1778. [PMID: 38113456 DOI: 10.1021/acsami.3c14215] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are highly promising nanomaterials for various electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. 2D MoSe2 stands out for having high electrical conductivity, charge carrier mobility, and melting point. While these features make it particularly appropriate as a switching layer in memristive devices, reliable and scalable production of large-area 2D MoSe2 still represents a challenge. In this study, we manufacture 2D MoSe2 films by atmospheric-pressure chemical vapor deposition and investigate them on the atomic scale. We selected and transferred MoSe2 bilayer to serve as a switching layer between asymmetric Au-Cu electrodes in miniaturized crossbar vertical memristors. The electrochemical metallization devices showed forming-free, bipolar resistive switching at low voltages, with clearly identifiable nonvolatile states. Other than low-power neuromorphic computing, low switching voltages approaching the range of biological action potentials could unlock hybrid biological interfaces.
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Affiliation(s)
- João Fernandes
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Justyna Grzonka
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Guilherme Araújo
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Alejandro Schulman
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - Vitor Silva
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - João Rodrigues
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - João Santos
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | | | - Paulo Ferreira
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Mechanical Engineering Department and IDMEC, Instituto Superior Técnico, University of Lisbon, Av. Rovisco Pais, 1049-001 Lisboa, Portugal
- Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712, United States
| | - Pedro Alpuim
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Centro de Física das Universidades do Minho e do Porto, Universidade do Minho, 4710-057 Braga, Portugal
| | - Andrea Capasso
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
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3
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Alahmadi M, Alsaedi WH, Mohamed WS, Hassan HMA, Ezzeldien M, Abu-Dief AM. Development of Bi 2O 3/MoSe 2 mixed nanostructures for photocatalytic degradation of methylene blue dye. JOURNAL OF TAIBAH UNIVERSITY FOR SCIENCE 2023. [DOI: 10.1080/16583655.2022.2161333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2023]
Affiliation(s)
- M. Alahmadi
- Chemistry Department, College of Science, Taibah University, Madinah, Saudi Arabia
| | - Wael. H. Alsaedi
- Chemistry Department, College of Science, Taibah University, Madinah, Saudi Arabia
| | - W. S. Mohamed
- Physics Department, College of Science, Jouf University, Sakaka, Saudi Arabia
- Physics Department, Faculty of Science, Sohag University, Sohag, Egypt
| | - Hassan M. A. Hassan
- Department of Chemistry, College of Science, Jouf University, Sakaka, Saudi Arabia
- Department of Chemistry, Faculty of Science, Suez University, Suez, Egypt
| | - Mohammed Ezzeldien
- Physics Department, College of Science, Jouf University, Sakaka, Saudi Arabia
- Metallurgy & Material Science Tests (MMST) Lab, Department of Physics, Faculty of Science, South Valley University, Qena, Egypt
| | - Ahmed M. Abu-Dief
- Chemistry Department, College of Science, Taibah University, Madinah, Saudi Arabia
- Department of Chemistry, Faculty of Science, Sohag University, Sohag, Egypt
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4
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Wang K, Zhou Y, Cheng L, Li D, Hu Z, Chen S, Wu C, Song L, Ge B. Engineering Phase Transition from 2H to 1T in MoSe 2 by W Cluster Doping toward Lithium-Ion Battery. Inorg Chem 2023; 62:21257-21264. [PMID: 38069815 DOI: 10.1021/acs.inorgchem.3c03311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2023]
Abstract
Phase engineering synthesis strategy is extremely challenging to achieve stable metallic phase molybdenum diselenide for a better physicochemical property than the thermodynamically stable semiconducting phase. Herein, we introduce tungsten atom clusters into the MoSe2 layered structure, realizing the phase transition from the 2H semiconductor to 1T metallic phase at a high temperature. The combination of synchrotron radiation X-ray absorption spectroscopy, Cs-corrected transmission electron microscopy, and theoretical calculation demonstrates that the aggregation doping of W atoms is the factor of MoSe2 structure transformation. When utilizing this distinct structure as an anode component, it demonstrates outstanding rate capability and durability. After 500 cycles, this results in a specific capacity of 1007.4 mAh g-1 at 500 mA g-1. These discoveries could open the door for the future development of high-performance anodes for ion battery applications.
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Affiliation(s)
- Ke Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Yu Zhou
- The First Affiliated Hospital of Anhui Medical University, Hefei, Anhui 230032, China
| | - Lixun Cheng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Dongdong Li
- Institute of Amorphous Matter Science, School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, China
| | - Zhihao Hu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Shuangming Chen
- National Synchrotron Radiation Lab, University of Science and Technology of China, Hefei, Anhui 230009, China
| | - Chuanqiang Wu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Li Song
- National Synchrotron Radiation Lab, University of Science and Technology of China, Hefei, Anhui 230009, China
| | - Binghui Ge
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
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5
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Jones LH, Xing Z, Swallow JEN, Shiel H, Featherstone TJ, Smiles MJ, Fleck N, Thakur PK, Lee TL, Hardwick LJ, Scanlon DO, Regoutz A, Veal TD, Dhanak VR. Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS 2, MoSe 2, and MoTe 2). THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2022; 126:21022-21033. [PMID: 36561200 PMCID: PMC9761681 DOI: 10.1021/acs.jpcc.2c05100] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Revised: 11/12/2022] [Indexed: 06/17/2023]
Abstract
A comprehensive study of bulk molybdenum dichalcogenides is presented with the use of soft and hard X-ray photoelectron (SXPS and HAXPES) spectroscopy combined with hybrid density functional theory (DFT). The main core levels of MoS2, MoSe2, and MoTe2 are explored. Laboratory-based X-ray photoelectron spectroscopy (XPS) is used to determine the ionization potential (IP) values of the MoX2 series as 5.86, 5.40, and 5.00 eV for MoSe2, MoSe2, and MoTe2, respectively, enabling the band alignment of the series to be established. Finally, the valence band measurements are compared with the calculated density of states which shows the role of p-d hybridization in these materials. Down the group, an increase in the p-d hybridization from the sulfide to the telluride is observed, explained by the configuration energy of the chalcogen p orbitals becoming closer to that of the valence Mo 4d orbitals. This pushes the valence band maximum closer to the vacuum level, explaining the decreasing IP down the series. High-resolution SXPS and HAXPES core-level spectra address the shortcomings of the XPS analysis in the literature. Furthermore, the experimentally determined band alignment can be used to inform future device work.
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Affiliation(s)
- Leanne
A. H. Jones
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Zongda Xing
- Department
of Chemistry, University College London, 20 Gordon Street, LondonWC1H 0AJ, U.K.
| | - Jack E. N. Swallow
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Huw Shiel
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Thomas J. Featherstone
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Matthew J. Smiles
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Nicole Fleck
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Pardeep K. Thakur
- Diamond
Light Source Ltd., Diamond House, Harwell
Science and Innovation Campus, Didcot, OxfordshireOX11 0DE, U.K.
| | - Tien-Lin Lee
- Diamond
Light Source Ltd., Diamond House, Harwell
Science and Innovation Campus, Didcot, OxfordshireOX11 0DE, U.K.
| | - Laurence J. Hardwick
- Stephenson
Institute for Renewable Energy and Department of Chemistry, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - David O. Scanlon
- Department
of Chemistry, University College London, 20 Gordon Street, LondonWC1H 0AJ, U.K.
| | - Anna Regoutz
- Department
of Chemistry, University College London, 20 Gordon Street, LondonWC1H 0AJ, U.K.
| | - Tim D. Veal
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
| | - Vinod R. Dhanak
- Stephenson
Institute for Renewable Energy and Department of Physics, University of Liverpool, LiverpoolL69 7ZF, U.K.
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6
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Mahankali K, Gottumukkala SV, Masurkar N, Thangavel NK, Jayan R, Sawas A, Nagarajan S, Islam MM, Arava LMR. Unveiling the Electrocatalytic Activity of 1T'-MoSe 2 on Lithium-Polysulfide Conversion Reactions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24486-24496. [PMID: 35583340 DOI: 10.1021/acsami.2c05508] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The dissolution of intermediate lithium polysulfides (LiPS) into an electrolyte and their shuttling between the electrodes have been the primary bottlenecks for the commercialization of high-energy density lithium-sulfur (Li-S) batteries. While several two-dimensional (2D) materials have been deployed in recent years to mitigate these issues, their activity is strictly restricted to their edge-plane-based active sites. Herein, for the first time, we have explored a phase transformation phenomenon in a 2D material to enhance the number of active sites and electrocatalytic activity toward LiPS redox reactions. Detailed theoretical calculations demonstrate that phase transformation from the 2H to 1T' phase in a MoSe2 material activates the basal planes that allow for LiPS adsorption. The corresponding transformation mechanism and LiPS adsorption capabilities of the as-formed 1T'-MoSe2 were elucidated experimentally using microscopic and spectroscopic techniques. Further, the electrochemical evaluation of phase-transformed MoSe2 revealed its strong electrocatalytic activity toward LiPS reduction and their oxidation reactions. The 1T'-MoSe2-based cathode hosts for sulfur later provide a superior cycling performance of over 250 cycles with a capacity loss of only 0.15% per cycle along with an excellent Coulombic efficiency of 99.6%.
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Affiliation(s)
- Kiran Mahankali
- Department of Mechanical Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
| | - Sundeep Varma Gottumukkala
- Department of Electrical and Computer Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
| | - Nirul Masurkar
- Department of Mechanical Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
| | - Naresh Kumar Thangavel
- Department of Mechanical Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
| | - Rahul Jayan
- Department of Mechanical Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
| | - Abdulrazzag Sawas
- Department of Mechanical Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
| | - Sudhan Nagarajan
- Department of Mechanical Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
| | - Md Mahbubul Islam
- Department of Mechanical Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
| | - Leela Mohana Reddy Arava
- Department of Mechanical Engineering, Wayne State University, 5050 Anthony Wayne Drive, Detroit, Michigan 48202, United States
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7
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Papanai GS, Sahoo KR, Reshma G B, Gupta S, Gupta BK. Role of processing parameters in CVD grown crystalline monolayer MoSe 2. RSC Adv 2022; 12:13428-13439. [PMID: 35520140 PMCID: PMC9066428 DOI: 10.1039/d2ra00387b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Accepted: 04/18/2022] [Indexed: 11/28/2022] Open
Abstract
The quality of as-synthesized monolayers plays a significant role in atomically thin semiconducting transition metal dichalcogenides (TMDCs) to determine the electronic and optical properties. For designing optoelectronic devices, exploring the effect of processing parameters on optical properties is a prerequisite. In this view, we present the influence of processing parameters on the lattice and quasiparticle dynamics of monolayer MoSe2. The lab-built chemical vapour deposition (CVD) setup is used to synthesize monolayer MoSe2 flakes with varying shapes, including sharp triangle (ST), truncated triangle (TT), hexagon, and rough edge circle (REC). In particular, the features of as-synthesized monolayer MoSe2 flakes are examined using Raman and photoluminescence (PL) spectroscopy. Raman spectra reveal that the frequency difference between the A1g and E12g peaks is >45 cm−1 in all the monolayer samples. PL spectroscopy also shows that the synthesized MoSe2 flakes are monolayer in nature with a direct band gap in the range of 1.50–1.58 eV. Furthermore, the variation in the direct band gap is analyzed using the spectral weight of quasiparticles in PL emission, where the intensity ratio {I(A0)/I(A−)} and trion binding energy are found to be ∼1.1–5.0 and ∼23.1–47.5 meV in different monolayer MoSe2 samples. Hence, these observations manifest that the processing parameters make a substantial contribution in tuning the vibrational and excitonic properties. Monolayer MoSe2 flakes with varying shapes, including sharp triangle, truncated triangle, hexagon, and rough edge circle are synthesized using APCVD method. The lattice and quasiparticle dynamics are examined under different growth conditions.![]()
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Affiliation(s)
- Girija Shankar Papanai
- Photonic Materials Metrology Sub Division, Advanced Materials and Device Metrology Division, CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India .,Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India
| | - Krishna Rani Sahoo
- Tata Institute of Fundamental Research - Hyderabad Sy. No. 36/P Serilingampally, Mandal, Gopanpally Village Hyderabad 500046 India
| | - Betsy Reshma G
- Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India.,CSIR-Institute of Genomics and Integrative Biology Mathura Road New Delhi 110025 India
| | - Sarika Gupta
- Molecular Sciences Lab, National Institute of Immunology Aruna Asaf Ali Marg New Delhi 110067 India
| | - Bipin Kumar Gupta
- Photonic Materials Metrology Sub Division, Advanced Materials and Device Metrology Division, CSIR-National Physical Laboratory Dr K. S. Krishnan Marg New Delhi 110012 India .,Academy of Scientific and Innovative Research (AcSIR) Ghaziabad 201002 India
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8
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Shen Y, Yu M, Huang R, Cheng Q. Numerical Simulation of n‐MoSe
2
/p‐Si Solar Cells by AFORS‐HET. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202100551] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Yuheng Shen
- Shenzhen Research Institute of Xiamen University Shenzhen 518000 P. R. China
- School of Electronic Science and Engineering Xiamen University Xiamen 361102 P. R. China
| | - Meng Yu
- Shenzhen Research Institute of Xiamen University Shenzhen 518000 P. R. China
- College of Energy Xiamen University Xiamen 361102 P. R. China
| | - Ruiming Huang
- Shenzhen Research Institute of Xiamen University Shenzhen 518000 P. R. China
- College of Energy Xiamen University Xiamen 361102 P. R. China
| | - Qijin Cheng
- Shenzhen Research Institute of Xiamen University Shenzhen 518000 P. R. China
- School of Electronic Science and Engineering Xiamen University Xiamen 361102 P. R. China
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9
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Dey S, Mujib SB, Singh G. Enhanced Li-Ion Rate Capability and Stable Efficiency Enabled by MoSe 2 Nanosheets in Polymer-Derived Silicon Oxycarbide Fiber Electrodes. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:553. [PMID: 35159898 PMCID: PMC8839961 DOI: 10.3390/nano12030553] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/28/2021] [Revised: 02/01/2022] [Accepted: 02/02/2022] [Indexed: 12/04/2022]
Abstract
Transition metal dichalcogenides (TMDs) such as MoSe2 have continued to generate interest in the engineering community because of their unique layered morphology-the strong in-plane chemical bonding between transition metal atoms sandwiched between two chalcogen atoms and the weak physical attraction between adjacent TMD layers provides them with not only chemical versatility but also a range of electronic, optical, and chemical properties that can be unlocked upon exfoliation into individual TMD layers. Such a layered morphology is particularly suitable for ion intercalation as well as for conversion chemistry with alkali metal ions for electrochemical energy storage applications. Nonetheless, host of issues including fast capacity decay arising due to volume changes and from TMD's degradation reaction with electrolyte at low discharge potentials have restricted use in commercial batteries. One approach to overcome barriers associated with TMDs' chemical stability functionalization of TMD surfaces by chemically robust precursor-derived ceramics or PDC materials, such as silicon oxycarbide (SiOC). SiOC-functionalized TMDs have shown to curb capacity degradation in TMD and improve long term cycling as Li-ion battery (LIBs) electrodes. Herein, we report synthesis of such a composite in which MoSe2 nanosheets are in SiOC matrix in a self-standing fiber mat configuration. This was achieved via electrospinning of TMD nanosheets suspended in pre-ceramic polymer followed by high temperature pyrolysis. Morphology and chemical composition of synthesized material was established by use of electron microscopy and spectroscopic technique. When tested as LIB electrode, the SiOC/MoSe2 fiber mats showed improved cycling stability over neat MoSe2 and neat SiOC electrodes. The freestanding composite electrode delivered a high charge capacity of 586 mAh g-1electrode with an initial coulombic efficiency of 58%. The composite electrode also showed good cycling stability over SiOC fiber mat electrode for over 100 cycles.
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Affiliation(s)
- Sonjoy Dey
- Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506, USA;
| | - Shakir Bin Mujib
- Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS 66506, USA;
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10
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Zhang H, pei M, Liu B, Wang Z, Zhao X. Structure and electronic properties of MoSe2/PtS2 van der Waals heterostructure. Phys Chem Chem Phys 2022; 24:19853-19864. [DOI: 10.1039/d2cp02559k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Structure and electronic properties of MoSe2/PtS2 van der Waals heterostructure and their dependence on the interlayer coupling, biaxial strain and external electric field are systematically investigated by using the first-principles...
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11
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Lakshad Wimalananda MS, Kim JK, Cho SW, Lee JM. Millimeter-Scale Continuous Film of MoS 2 Synthesized Using a Mo, Na, and Seeding Promoter-Based Coating as a Solid Precursor. ACS OMEGA 2021; 6:32208-32214. [PMID: 34870041 PMCID: PMC8638302 DOI: 10.1021/acsomega.1c05052] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Accepted: 11/08/2021] [Indexed: 06/13/2023]
Abstract
While the chemical vapor deposition technique can be used to fabricate 2D materials in a larger area, materials like MoS2 have limited controllability due to their lack of self-controlling nature. This article presents a new technique for synthesizing a void-free millimeter-scale continuous monolayer MoS2 film through the diffusion of a well-controlled Mo, Na, and seeding promoter-based coating under a low-pressure N2 atmosphere. Compared to the conventional method, this technique provides precise control of solid precursors, where MoS2 grows next to the coating. At 800 °C, the synthesized MoS2 showed a uniform single-layer MoS2 film; however, a Na-free coating showed nanoscale voids and poor crystal quality, which are attributed to a higher edge-attachment barrier that slows down the MoS2 lateral growth. The synthesized MoS2 with Na-containing solution showed an intense PL peak with a 1.86 eV band gap. Even at the relatively low temperature of 700 °C, compared to the Na-excluded condition, MoS2 showed almost two times higher area coverage with a comparatively larger crystal size. This finding may assist in the future development of MoS2-based electronic and optoelectronic devices such as transistors and photodetectors.
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12
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Zhang J, Qian Y, Nan H, Gu X, Xiao S. Large-scale MoS 2(1-x)Se 2xmonolayers synthesized by confined-space CVD. NANOTECHNOLOGY 2021; 32:355601. [PMID: 33975284 DOI: 10.1088/1361-6528/ac0026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2020] [Accepted: 05/11/2021] [Indexed: 06/12/2023]
Abstract
Alloy engineering is efficient in modulating the electronic structure and physical and chemical properties of Transition metal dichalcogenides (TMDs). Here, we develop an efficient and simple confined-space CVD strategy by using a smaller quartz boat nested in a larger quartz boat for the preparation of ternary alloy MoS2(1-x)Se2xmonolayers on SiO2/Si substrates with controllable composition. The effect of hydrogen ratio of the mixed carrier gas (Ar/H2) on the resultant flakes are systematically investigated. A hydrogon ratio of 15% is demonstrated to be the most appropriate to synthesize large size (more than 400μm) single crystalline MoS2(1-x)Se2xalloy monolayers. The composition of the alloy can also be changed in a full range (2x= 0-2) by changing the weight ratio of Se and S powder. The as-grown monolayer MoS2(1-x)Se2xalloys present continuously high crystal quality in terms of Raman and PL measurements. Furthermore, to visible light (532 nm), the MoS2(1-x)Se2xbased photodetectors display wonderful photoresponse with a fast response of less than 50 ms. Our work may be usedful in directing the synthesis of TMDs alloys as well as their optoelectronic applications.
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Affiliation(s)
- Jinming Zhang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Yezheng Qian
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Xiaofeng Gu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Shaoqing Xiao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
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Yan H, Yu T, Li H, Li Z, Tang H, Hu H, Yu H, Yin S. Synthesis of large-area monolayer and few-layer MoSe 2 continuous films by chemical vapor deposition without hydrogen assistance and formation mechanism. NANOSCALE 2021; 13:8922-8930. [PMID: 33955448 DOI: 10.1039/d1nr00552a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two dimensional (2D) MoSe2 with a layered structure has attracted extensive research due to its excellent electronic and optical properties. The controlled synthesis of large-scale and high-quality MoSe2 is highly desirable but still remains challenging. Ambient pressure chemical vapor deposition (APCVD) is an excellent method for the synthesis of 2D materials but the inevitable use of hydrogen during the growth and the easy formation of cracks in the ultrathin films still need to be solved. In the present work, we reported the synthesis of large-area continuous MoSe2 films with different layers by the APCVD method without the assistance of hydrogen on SiO2/Si substrates just by raising the reaction temperature of Se. The synthesized continuous MoSe2 films can reach several centimeters, which can be seen clearly by naked eyes, and, more importantly, the size of the monolayer film can reach up to 3 mm. The morphology, structural characteristics, and optical properties of the synthesized MoSe2 films have been investigated, demonstrating good performance and high crystallinity of the films. Raman spectra give the empirical expression of the frequency difference between E2g1 and A1g dependence of the layer number (N = 1-10 L) for CVD grown MoSe2, which is useful in layer number identification. Further, the formation mechanism of the MoSe2 continuous film is of interest as a fundamental scientific problem and needs to be studied. We proposed the wing model, boundary layer theory, and diffusion theory to account quantitatively for the formation behavior of the MoSe2 film. The presented facile growth method and theoretical model are useful to synthesize other ultrathin transition metal dichalcogenide films and understand the formation behaviors of the systems.
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Affiliation(s)
- Hui Yan
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. and Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Institute of Functional Crystal, Tianjin University of Technology, Ministry of Education, Tianjin 300384, China
| | - Tong Yu
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. and Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Institute of Functional Crystal, Tianjin University of Technology, Ministry of Education, Tianjin 300384, China
| | - Heng Li
- Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China and Jiujiang Research Institute of Xiamen University, Jiujiang 332000, China
| | - Zhuocheng Li
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. and Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Institute of Functional Crystal, Tianjin University of Technology, Ministry of Education, Tianjin 300384, China
| | - Haitao Tang
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Hangwei Hu
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Hao Yu
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. and Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Institute of Functional Crystal, Tianjin University of Technology, Ministry of Education, Tianjin 300384, China
| | - Shougen Yin
- Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China. and Key Laboratory of Display Materials and Photoelectric Devices, National Demonstration Center for Experimental Function Materials Education, Institute of Functional Crystal, Tianjin University of Technology, Ministry of Education, Tianjin 300384, China
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14
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Wu Q, Fu X, Yang K, Wu H, Liu L, Zhang L, Tian Y, Yin LJ, Huang WQ, Zhang W, Wong PKJ, Zhang L, Wee ATS, Qin Z. Promoting a Weak Coupling of Monolayer MoSe 2 Grown on (100)-Faceted Au Foil. ACS NANO 2021; 15:4481-4489. [PMID: 33656862 DOI: 10.1021/acsnano.0c08513] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
As a two-dimensional semiconductor with many physical properties, including, notably, layer-controlled electronic bandgap and coupled spin-valley degree of freedom, monolayer MoSe2 is a strong candidate material for next-generation opto- and valley-electronic devices. However, due to substrate effects such as lattice mismatch and dielectric screening, preserving the monolayer's intrinsic properties remains challenging. This issue is generally significant for metallic substrates whose active surfaces are commonly utilized to achieve direct chemical or physical vapor growth of the monolayer films. Here, we demonstrate high-temperature-annealed Au foil with well-defined (100) facets as a weakly interacting substrate for atmospheric pressure chemical vapor deposition of highly crystalline monolayer MoSe2. Low-temperature scanning tunneling microscopy/spectroscopy measurements reveal a honeycomb structure of MoSe2 with a quasi-particle bandgap of 1.96 eV, a value comparable with other weakly interacting systems such as MoSe2/graphite. Density functional theory calculations indicate that the Au(100) surface exhibits the preferred energetics to electronically decouple from MoSe2, compared with the (110) and (111) crystal planes. This weak coupling is critical for the easy transfer of monolayers to another host substrate. Our study demonstrates a practical means to produce high-quality monolayers of transition-metal dichalcogenides, viable for both fundamental and application studies.
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Affiliation(s)
- Qilong Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiaoshuai Fu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Ke Yang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Hongyu Wu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Li Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Li Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Long-Jing Yin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Wei-Qing Huang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Wen Zhang
- School of Microelectronics & School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Ping Kwan Johnny Wong
- School of Microelectronics & School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Lijie Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Zhihui Qin
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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15
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Pataniya PM, Bhakhar SA, Tannarana M, Zankat C, Patel V, Solanki G, Patel K, Jha PK, Late DJ, Sumesh C. Highly sensitive and flexible pressure sensor based on two-dimensional MoSe2 nanosheets for online wrist pulse monitoring. J Colloid Interface Sci 2021; 584:495-504. [DOI: 10.1016/j.jcis.2020.10.006] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2020] [Revised: 09/28/2020] [Accepted: 10/04/2020] [Indexed: 01/17/2023]
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16
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Fan Z, Xu M, Huang Y, Lei Z, Zheng L, Zhang Z, Zhao W, Zhou Y, Wang X, Xu X, Liu Z. Terahertz Surface Emission from MoSe 2 at the Monolayer Limit. ACS APPLIED MATERIALS & INTERFACES 2020; 12:48161-48169. [PMID: 32990422 DOI: 10.1021/acsami.0c13474] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The surface-charge region of bulk and monolayer MoSe2 is analyzed directly by terahertz (THz) surface emission spectroscopy in a nondestructive way. Both surface nonlinear optical polarization and surface field-induced photocurrent contribute to the THz radiation in both bulk and monolayer MoSe2. The first THz emission mechanism is due to the surface optical rectification and the second one is due to the photogenerated carriers accelerated by the surface depletion field. The THz radiation contribution from the surface optical rectification is basically the same for both bulk and monolayer MoSe2 because of the same symmetry at the surface. However, the contribution from the surface field-induced photocurrent is ∼94.2% in bulk MoSe2 and it goes down to 74.5% in monolayer MoSe2. This is due to the larger surface depletion field in bulk MoSe2 (∼2.54 × 107 V/m) compared with that in monolayer MoSe2 (∼5.42 × 105 V/m), as such THz emission from the bulk is approximately four times larger than that from monolayer MoSe2. This work not only proves the clear THz radiation mechanism from MoSe2 crystals but also affords a THz technology for the surface characterization of two-dimensional materials.
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Affiliation(s)
- Zeyu Fan
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Manzhang Xu
- School of Information Science and Technology, Northwest University, Xi'an 710127, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yuanyuan Huang
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Zhen Lei
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Zhiyong Zhang
- School of Information Science and Technology, Northwest University, Xi'an 710127, China
| | - Wu Zhao
- School of Information Science and Technology, Northwest University, Xi'an 710127, China
| | - Yixuan Zhou
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, Institute of Photonics & Photon-Technology, School of Physics, Northwest University, Xi'an 710069, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Centre for Micro-/Nano-Electronics (NOVITAS), School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553, Singapore
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17
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Mandyam SV, Kim HM, Drndić M. Large area few-layer TMD film growths and their applications. JPHYS MATERIALS 2020; 3:024008. [PMID: 36092286 PMCID: PMC9458871 DOI: 10.1088/2515-7639/ab82b3] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Research on 2D materials is one of the core themes of modern condensed matter physics. Prompted by the experimental isolation of graphene, much attention has been given to the unique optical, electronic, and structural properties of these materials. In the past few years, semiconducting transition metal dichalcogenides (TMDs) have attracted increasing interest due to properties such as direct band gaps and intrinsically broken inversion symmetry. Practical utilization of these properties demands large-area synthesis. While films of graphene have been by now synthesized on the order of square meters, analogous achievements are difficult for TMDs given the complexity of their growth kinetics. This article provides an overview of methods used to synthesize films of mono- and few-layer TMDs, comparing spatial and time scales for the different growth strategies. A special emphasis is placed on the unique applications enabled by such large-scale realization, in fields such as electronics and optics.
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Affiliation(s)
- Srinivas V Mandyam
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
| | - Hyong M Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States of America
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18
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Sharma MD, Mahala C, Basu M. 2D Thin Sheet Heterostructures of MoS2 on MoSe2 as Efficient Electrocatalyst for Hydrogen Evolution Reaction in Wide pH Range. Inorg Chem 2020; 59:4377-4388. [DOI: 10.1021/acs.inorgchem.9b03445] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Mamta Devi Sharma
- Department of Chemistry, BITS Pilani, Pilani Campus, Rajasthan-333031, India
| | - Chavi Mahala
- Department of Chemistry, BITS Pilani, Pilani Campus, Rajasthan-333031, India
| | - Mrinmoyee Basu
- Department of Chemistry, BITS Pilani, Pilani Campus, Rajasthan-333031, India
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19
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Zavabeti A, Jannat A, Zhong L, Haidry AA, Yao Z, Ou JZ. Two-Dimensional Materials in Large-Areas: Synthesis, Properties and Applications. NANO-MICRO LETTERS 2020; 12:66. [PMID: 34138280 PMCID: PMC7770797 DOI: 10.1007/s40820-020-0402-x] [Citation(s) in RCA: 80] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/19/2019] [Accepted: 02/02/2020] [Indexed: 05/22/2023]
Abstract
Large-area and high-quality two-dimensional crystals are the basis for the development of the next-generation electronic and optical devices. The synthesis of two-dimensional materials in wafer scales is the first critical step for future technology uptake by the industries; however, currently presented as a significant challenge. Substantial efforts have been devoted to producing atomically thin two-dimensional materials with large lateral dimensions, controllable and uniform thicknesses, large crystal domains and minimum defects. In this review, recent advances in synthetic routes to obtain high-quality two-dimensional crystals with lateral sizes exceeding a hundred micrometres are outlined. Applications of the achieved large-area two-dimensional crystals in electronics and optoelectronics are summarised, and advantages and disadvantages of each approach considering ease of the synthesis, defects, grain sizes and uniformity are discussed.
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Affiliation(s)
- Ali Zavabeti
- College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211100, People's Republic of China.
- Department of Chemical Engineering, The University of Melbourne, Parkville, VIC, 3010, Australia.
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
| | - Azmira Jannat
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia
| | - Li Zhong
- College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211100, People's Republic of China
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia
| | - Azhar Ali Haidry
- College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211100, People's Republic of China
| | - Zhengjun Yao
- College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, 211100, People's Republic of China
| | - Jian Zhen Ou
- School of Engineering, RMIT University, Melbourne, VIC, 3000, Australia.
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20
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Morphological, optical and photovoltaic characteristics of MoSe 2/SiO x/Si heterojunctions. Sci Rep 2020; 10:1215. [PMID: 31988375 PMCID: PMC6985159 DOI: 10.1038/s41598-020-58164-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2019] [Accepted: 01/07/2020] [Indexed: 11/16/2022] Open
Abstract
This work reports the effect of different processing parameters on the structural and morphological characteristics of MoSe2 layers grown by chemical vapour deposition (CVD), using MoO3 and Se powders as solid precursors. It shows the strong dependence of the size, shape and thickness of the MoSe2 layers on the processing parameters. The morphology of the samples was investigated by field emission scanning electron microscopy (FESEM) and the thickness of the deposited layers was determined by atomic force microscopy (AFM). Raman and photoluminescence (PL) spectroscopies were used to confirm the high quality of the MoSe2 layers. Surface composition was examined by photoelectron spectroscopy (XPS). Moreover, the MoSe2/SiOx/Si heterojunctions exhibit diode behaviour, with a rectification ratio of 10, measured at ±2.0 V, which is due to the p-i-n heterojunctions formed at the p-Si/SiOx/MoSe2 interface. A photovoltaic effect was observed with a short circuit current density (Jsc), open circuit voltage (VOC) and efficiency of −0.80 mA/cm2, 1.55 V and 0.5%, respectively. These results provide a guide for the preparation of p-i-n heterojunctions based on few-layer MoSe2 with improved photovoltaic response.
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21
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Synthesis of Monolayer MoSe 2 with Controlled Nucleation via Reverse-Flow Chemical Vapor Deposition. NANOMATERIALS 2019; 10:nano10010075. [PMID: 31906071 PMCID: PMC7023349 DOI: 10.3390/nano10010075] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/01/2019] [Revised: 12/24/2019] [Accepted: 12/25/2019] [Indexed: 01/23/2023]
Abstract
Two-dimensional (2D) layered semiconductor materials, such as transition metal dichalcogenides (TMDCs), have attracted considerable interests because of their intriguing optical and electronic properties. Controlled growth of TMDC crystals with large grain size and atomically smooth surface is indeed desirable but remains challenging due to excessive nucleation. Here, we have synthesized high-quality monolayer, bilayer MoSe2 triangular crystals, and continuous thin films with controlled nucleation density via reverse-flow chemical vapor deposition (CVD). High crystallinity and good saturated absorption performance of MoSe2 have been systematically investigated and carefully demonstrated. Optimized nucleation and uniform morphology could be achieved via fine-tuning reverse-flow switching time, growth time and temperature, with corresponding growth kinetics proposed. Our work opens up a new approach for controllable synthesis of monolayer TMDC crystals with high yield and reliability, which promote surface/interface engineering of 2D semiconductors towards van der Waals heterostructure device applications.
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22
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Hwang Y, Shin N. Hydrogen-assisted step-edge nucleation of MoSe 2 monolayers on sapphire substrates. NANOSCALE 2019; 11:7701-7709. [PMID: 30946393 DOI: 10.1039/c8nr10315a] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The fabrication of large-area single crystalline monolayer transition metal dichalcogenides (TMDs) is essential for a range of electric and optoelectronic applications. Chemical vapor deposition (CVD) is a promising method to achieve this goal by employing orientation control or alignment along the crystalline lattice of the substrate such as sapphire. On the other hand, a fundamental understanding of the aligned-growth mechanism of TMDs is limited. In this report, we show that the controlled introduction of H2 during the CVD growth of MoSe2 plays a vital role in the step-edge aligned nucleation on a c-sapphire (0001) substrate. In particular, the MoSe2 domains nucleate along the [112[combining macron]0] step-edge orientation by flowing H2 subsequent to pure Ar. Systematic studies, including the H2 introduction time, flow rate, and substrate temperature, suggest that the step-edge aligned nucleation of MoSe2 can be controlled by the hydrogen concentration on the sapphire substrate. These results offer important insights into controlling the epitaxial growth of 2D materials on a crystalline substrate.
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Affiliation(s)
- Yunjeong Hwang
- Department of Chemical Engineering, Inha University, 100, Inha-ro, Michuhol-Gu, Incheon 22212, Republic of Korea.
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23
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Rasouli HR, Mehmood N, Çakıroğlu O, Kasırga TS. Real time optical observation and control of atomically thin transition metal dichalcogenide synthesis. NANOSCALE 2019; 11:7317-7323. [PMID: 30938382 DOI: 10.1039/c9nr00614a] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Understanding the mechanisms involved in chemical vapour deposition (CVD) synthesis of atomically thin transition metal dichalcogenides (TMDCs) requires precise control of numerous growth parameters. All the proposed mechanisms and their relationship with the growth conditions are inferred from characterising intermediate formations obtained by stopping the growth blindly. To fully understand the reaction routes that lead to the monolayer formation, real time observation and control of the growth are needed. Here, we demonstrate how a custom-made CVD chamber that allows real time optical monitoring can be employed to study the reaction routes that are critical to the production of the desired layered thin crystals in salt assisted TMDC synthesis. Our real time observations reveal the reaction between the salt and the metallic precursor to form intermediate compounds which lead to the layered crystal formation. We identified that both the vapour-solid-solid and vapour-liquid-solid growth routes are in an interplay. Furthermore, we demonstrate the role H2 plays in the salt-assisted WSe2 synthesis. Finally, we observed the synthesis of the MoSe2/WSe2 heterostructures optically, and elucidated the conditions required for both lateral and vertical heterostructure syntheses.
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Affiliation(s)
- Hamid Reza Rasouli
- UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey.
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24
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Bhat KS, Nagaraja H. Effect of isoelectronic tungsten doping on molybdenum selenide nanostructures and their graphene hybrids for supercapacitors. Electrochim Acta 2019. [DOI: 10.1016/j.electacta.2019.02.059] [Citation(s) in RCA: 34] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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25
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Sial MN, Usman M, Zheng B, Yu Y, Mavrič A, Qing F, Valant M, Wang ZM. CVD growth of molybdenum diselenide surface structures with tailored morphology. CrystEngComm 2018. [DOI: 10.1039/c8ce00917a] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm.
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Affiliation(s)
- M. Naeem Sial
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
| | - Muhammad Usman
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
| | - Binjie Zheng
- State Key Laboratory of Electronic Thin Films and Integrated Devices
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
| | - Yanan Yu
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
| | - Andraž Mavrič
- University of Nova Gorica
- Materials Research Laboratory
- SI-5000 Nova Gorica
- Slovenia
| | - Fangzhu Qing
- State Key Laboratory of Electronic Thin Films and Integrated Devices
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
| | - Matjaz Valant
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
- University of Nova Gorica
- Materials Research Laboratory
| | - Zhiming M. Wang
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
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