Lanthanide-doped MoS2 with enhanced oxygen reduction activity and biperiodic chemical trends

Molybdenum disulfide has broad applications in catalysis, optoelectronics, and solid lubrication, where lanthanide (Ln) doping can be used to tune its physicochemical properties. The reduction of oxygen is an electrochemical process important in determining fuel cell efficiency, or a possible environmental-degradation mechanism for nanodevices and coatings consisting of Ln-doped MoS₂. Here, by combining density-functional theory calculations and current-potential polarization curve simulations, we show that the dopant-induced high oxygen reduction activity at Ln-MoS₂/water interfaces scales as a biperiodic function of Ln type. A defect-state pairing mechanism, which selectively stabilizes the hydroxyl and hydroperoxyl adsorbates on Ln-MoS₂, is proposed for the activity enhancement, and the biperiodic chemical trend in activity is found originating from the similar trends in intraatomic 4f-5d6s orbital hybridization and interatomic Ln-S bonding. A generic orbital-chemistry mechanism is described for explaining the simultaneous biperiodic trends observed in many electronic, thermodynamic, and kinetic properties.

First-principles study of the electronic and optical properties of Ho[Formula: see text] impurities in single-layer tungsten disulfide

The electronic and optical properties of single-layer (SL) tungsten disulfide (WS[Formula: see text]) in the presence of substitutional Holmium impurities (Ho[Formula: see text]) are studied. Although Ho is much larger than W, density functional theory (DFT) including spin-orbit coupling is used to show that Ho:SL WS[Formula: see text] is stable. The magnetic moment of the Ho impurity is found to be 4.75[Formula: see text] using spin-dependent DFT. The optical selection rules identified in the optical spectrum match exactly the optical selection rules derived by means of group theory. The presence of neutral Ho[Formula: see text] impurities gives rise to localized impurity states (LIS) with f-orbital character in the band structure. Using the Kubo-Greenwood formula and Kohn-Sham orbitals we obtain atom-like sharp transitions in the in-plane and out-of-plane components of the susceptibility tensor, Im[Formula: see text] and Im[Formula: see text]. The optical resonances are in good agreement with experimental data.

Strain-Modulated Magnetism in MoS2

Since the experiments found that two-dimensional (2D) materials such as single-layer MoS2 can withstand up to 20% strain, strain-modulated magnetism has gradually become an emerging research field. However, applying strain alone is difficult to modulate the magnetism of single-layer pristine MoS2, but applying strain combined with other tuning techniques such as introducing defects makes it easier to produce and alter the magnetism in MoS2. Here, we summarize the recent progress of strain-dependent magnetism in MoS2. First, we review the progress in theoretical study. Then, we compare the experimental methods of applying strain and their effects on magnetism. Specifically, we emphasize the roles played by web buckles, which induce biaxial tensile strain conveniently. Despite some progress, the study of strain-dependent MoS2 magnetism is still in its infancy, and a few potential directions for future research are discussed at the end. Overall, a broad and in-depth understanding of strain-tunable magnetism is very necessary, which will further drive the development of spintronics, straintronics, and flexible electronics.

Ferromagnetism of two-dimensional transition metal chalcogenides: both theoretical and experimental investigations

In recent years, with the fast development of integrated circuit electronic devices and technologies, it has become urgent to improve the density of data storage and lower the energy losses of devices. Under these circumstances, two-dimensional (2D) materials, which have a smaller size and lower energy loss compared with bulk materials, are becoming ideal candidates for future spintronic devices. Among them, 2D transition metal chalcogenides (TMCs), which have excellent electronic and optical properties, have attracted great attention from researchers. However, most of them are intrinsically non-magnetic, which severely hinders their further applications in spintronics. Therefore, introducing intrinsic room-temperature ferromagnetism into 2D TMC materials has become an important issue in spintronics. In this work, we review the introduction of intrinsic ferromagnetism into typical 2D TMCs using various strategies, such as defect engineering, doping with transition metal elements, and phase transfer. Additionally, we found that their ferromagnetism could be adjusted via changing the experimental conditions, such as the nucleation temperature, ion irradiation dose, doping amount, and phase ratio. Finally, we provide some insight into prospective solutions for introducing ferromagnetism into 2D TMCs, hoping to shed some light on future spintronics development.

Tuning the spin polarization in monolayer MoS2 through (Y,Yb) co-doping

Yb-Doped monolayer MoS₂ is ferromagnetic at room temperature, and this ferromagnetic state can be stabilized by Y co-doping.