Semiconductor Deposition via Laser Printing of a Bespoke Toner Containing Metal Xanthate Complexes

A methodology to use laser printing, a form of electrophotography, to print metal chalcogenide complexes on paper, is described. After fusing the toner to paper, a heating step is used to cause the printed metal xanthate complexes to thermolyze within the toner and form three target metal chalcogenides: CuS, SnS, and ZnS. To achieve this, we synthesize a poly(styrene-co-n-butyl acrylate) thermopolymer that emulates the thermal properties of a commercial toner and is also solution processable with the metal xanthate complexes used: [Zn(S2COEt)2], [Cu(S2COEt)·(PPh3)2], and [Sn(S2COEt)2]. We demonstrate through energy dispersive X-ray mapping that the toner is deposited following printing and that thermolysis of the metal xanthate complexes occurs in the fused toner, demonstrating the first example of laser printing of inorganic complexes and, in turn, semiconductors.

Synthesis and characterisation of Ga- and In-doped CdS by solventless thermolysis of single source precursors

We report a facile and low temperature synthesis of Ga- and In-doped CdS nanoparticles from molecular precursors. Diethyldithiocarbamate complexes of Cd(II), Ga(III), and In(III), were synthesised and decomposed in tandem through solventless thermolysis, producing Ga- or In-doped CdS. The resultant M_xCd_1-xS_1+0.5x (where M = Ga/In at x values of 0, 0.02, 0.04, 0.06, 0.08 and 0.1) particulate powder was analysed by powder X-ray diffraction, which showed that both Ga (through all doping levels) and In (at doping levels <8 mol%) were successfully incorporated into the hexagonal CdS lattice without any impurities. Raman spectroscopy also showed no significant change from CdS. Scanning electron microscopy and energy dispersive X-ray spectroscopy were used to investigate the morphology and elemental dispersion through the doped CdS materials, showing homogenous incorporation of dopant. The optical and luminescent properties of the doped M_xCd_1-xS_1+0.5x materials were examined by UV-Vis absorption and photoluminescence spectroscopies respectively. All materials were found to exhibit excitonic emission, corresponding to band gap energies between 2.7 and 2.9 eV and surface defect induced emission which is more prominent for Ga than for In doping. Additionally, moderate doping slows down charge carrier recombination by increasing the lifetimes of excitonic and surface state emissions, but particularly for the latter process.

Synthesis of ternary copper antimony sulfide via solventless thermolysis or aerosol assisted chemical vapour deposition using metal dithiocarbamates

Copper antimony sulfide (Cu-Sb-S) has recently been proposed as an attractive alternative photovoltaic material due to the earth-abundant and non-toxic nature of the elements, high absorption coefficients and band gaps commensurate with efficient harvesting of solar photonic flux across multiple phases of Cu-Sb-S. These materials are therefore highly desirable and sustainable and scalable deposition techniques to produce them are of interest. In this paper, we demonstrate two facile, low-temperature and inexpensive techniques (solventless thermolysis and aerosol-assisted chemical vapor deposition (AACVD)) for the preparation of binary digenite (Cu1.8S), chalcocite (Cu2S) and stibnite (Sb2S3) and several phases of ternary copper-antimony-sulfide (Cu2xSb2(1-x)Sy, where 0 ≤ x ≤ 1). It was found that by utilising these different techniques and varying the ratio of Cu:Sb, pure phases of ternary chalcostibite (CuSbS2), fematinite (Cu3SbS4) and tetrahedrite (Cu12Sb4S13) can be achieved. Two single-source precursors were investigated for this purpose, namely the diethyldithiocarbamate (DTC) complexes of copper and antimony Cu(DTC)2 and Sb(DTC)3. These were decomposed both individually (to produce binary materials) and combined (to produce ternary materials) at different ratios. From the solventless thermolysis and AACVD methods, either particulate or thin film material was formed, respectively. These materials were then characterised by powder XRD, SEM, EDX and Raman spectroscopies to determine the crystalline phase, material morphology and uniformity of elemental composition. This analysis demonstrated that as the Cu-content increases, the phase of the ternary material changes from chalcostibite (CuSbS2) and fematinite (Cu3SbS4) at a low Cu:Sb ratio to tetrahedrite (Cu12Sb4S13) at a high Cu:Sb ratio.

Dithiocarbamate Complexes as Single Source Precursors to Nanoscale Binary, Ternary and Quaternary Metal Sulfides

Nanodimensional metal sulfides are a developing class of low-cost materials with potential applications in areas as wide-ranging as energy storage, electrocatalysis, and imaging. An attractive synthetic strategy, which allows careful control over stoichiometry, is the single source precursor (SSP) approach in which well-defined molecular species containing preformed metal-sulfur bonds are heated to decomposition, either in the vapor or solution phase, resulting in facile loss of organics and formation of nanodimensional metal sulfides. By careful control of the precursor, the decomposition environment and addition of surfactants, this approach affords a range of nanocrystalline materials from a library of precursors. Dithiocarbamates (DTCs) are monoanionic chelating ligands that have been known for over a century and find applications in agriculture, medicine, and materials science. They are easily prepared from nontoxic secondary and primary amines and form stable complexes with all elements. Since pioneering work in the late 1980s, the use of DTC complexes as SSPs to a wide range of binary, ternary, and multinary sulfides has been extensively documented. This review maps these developments, from the formation of thin films, often comprised of embedded nanocrystals, to quantum dots coated with organic ligands or shelled by other metal sulfides that show high photoluminescence quantum yields, and a range of other nanomaterials in which both the phase and morphology of the nanocrystals can be engineered, allowing fine-tuning of technologically important physical properties, thus opening up a myriad of potential applications.

Homoleptic Group 13 Trimethylsilylchalcogenolato Metalates [M(ESiMe3)4]- (M = Ga, In; E = S, Se): Metastable Precursors for Low-Temperature Syntheses of Chalcogenide-Based Materials

We communicate the synthesis and full characterization of so far unknown tetrakis(trimethylsilylsulfido) and -(trimethylsilylselenido) gallates and indates in form of their organic salts Cat⁺[M(ESiMe₃)₄]^- (M = Ga, In; E = S, Se; Cat = dimethylpyrrolidinium (DMPyr⁺), Ph₄P⁺, (dppe)₂Cu⁺, (dmpe)₂Cu⁺). These thermally metastable silylchalcogenolatometalates can act as modular precursors for an ionic-liquid- or organic-solution-based low-temperature synthesis of multinary metal chalcogenide materials such as the CIGS species Cu(In_xGa_1-x)(S_ySe_1-y)₂.

Accessing γ-Ga2S3 by solventless thermolysis of gallium xanthates: a low-temperature limit for crystalline products

Alkyl-xanthato gallium(iii) complexes of the form [Ga(S₂COR)₃], where R = Me (1), Et (2), ⁱPr (3), ⁿPr (4), ⁿBu (5), ^sBu (6) and ⁱBu (7), have been synthesized and fully characterised. The crystal structures for 1 and 3-7 have been solved and examined to elucidate if these structures are related to their decomposition. Thermogravimetric analysis was used to gain insight into the decomposition temperatures for each complex. Unlike previously explored metal xanthate complexes which break down at low temperatures (<250 °C), to form crystalline metal chalcogenides, powder X-ray diffraction measurements suggest that when R ≥ Et these complexes did not produce crystalline gallium sulfides until heated to 500 °C, where γ-Ga₂S₃ was the sole product formed. In the case of R = Me, Chugaev elimination did not occur and amorphous Ga_xS_y products were formed. We conclude therefore that the low-temperature synthesis route offered by the thermal decomposition of metal xanthate precursors, which has been reported for many metal sulfide systems prior to this, may not be appropriate in the case of gallium sulfides.

Hot injection synthesis of CuInS2 nanocrystals using metal xanthates and their application in hybrid solar cells

Copper indium sulfide nanocrystals with sizes of 3–4 nm were synthesized from metal xanthates in a hot injection reaction. After ligand exchange, their performance as acceptors in polymer/nanocrystal hybrid solar cells was evaluated.

Multi-layered nanoscale cellulose/CuInS2 sandwich type thin films

A generic procedure for the manufacturing of cellulose-metal sulfide multilayered sandwich type thin films is demonstrated at the example of copper indium sulfide. These multilayers were created by alternate spin coating steps of precursors, followed by their conversion using either acidic vapors, or heat treatment. As precursors, cellulose xanthate, a widely available cellulose derivative employed in viscose fiber manufacturing and commercial copper and indium xanthates were used. After conversion of the single layers into cellulose and copper indium sulfide, the film properties (structure, thickness, photoelectric activity) of the single and multilayer systems consisting of alternate layers of cellulose and copper indium sulfide were studied. For the proof of concept, up to five layers were built up, showing a clear separation of the cellulose and the metal sulfide layers as demonstrated using cross sectional analysis using ion slope beam cutting and SEM imaging. Finally, the conversion of xanthates was performed using UV light and a mask, allowing for the creation of 2D patterns.