1
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Zhang C, Jiang X, Wang X, Cao X, Zhou L, Xing Y, Xu N. The effect of optical-acoustic phonon coupling on the thermal conductivity of 2D MgI 2. Phys Chem Chem Phys 2024; 26:22509-22517. [PMID: 39145772 DOI: 10.1039/d4cp02462a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
2D MgI2 has a large phonon band gap and strong coupling of optical and acoustic phonons, and it is difficult to accurately predict thermal conductivity by considering only three-phonon scattering. Thus, in this study, the effect of four-phonon scattering on the thermal conductivity of a 2D MgI2 lattice was investigated using first-principles calculations combined with Boltzmann transport theory. The results show that with increasing temperature, four-phonon scattering induces an increase in the scattering of phonons at the optical and acoustic phonon coupling (2 THz), as well as in the vicinity of the optical phonon branch (4.5 THz), which leads to the enhancement of the anharmonicity of phonon transport and results in a decrease in the thermal conductivity of the 2D material. At 700 K, the thermal conductivity of MgI2 decreases by over half, from 0.47 W m-1 K-1 to 0.23 W m-1 K-1, when considering both three- and four-phonon scattering, compared to considering only three-phonon scattering. This study confirms the need to consider the role of four-phonon scattering to enhance optical and acoustic phonon coupling to accurately predict the thermal conductivity of 2D materials with larger phonon band gaps.
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Affiliation(s)
- Chunwei Zhang
- School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu, 224051, P. R. China
| | - Xiaobo Jiang
- School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu, 224051, P. R. China
| | - Xiaodan Wang
- School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu, 224051, P. R. China
| | - Xingan Cao
- School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu, 224051, P. R. China
| | - LinZhen Zhou
- School of Mechanical Engineering, Yancheng Institute of Technology, Jiangsu, 224051, P. R. China
| | - Yuheng Xing
- Department of Physics, Yancheng Institute of Technology, Jiangsu, 224051, P. R. China
| | - Ning Xu
- Department of Physics, Yancheng Institute of Technology, Jiangsu, 224051, P. R. China
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2
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Li G, Bao H, Peng Y, Fu X, Liao W, Xiang C. Strain controllable band alignment and the interfacial and optical properties of tellurene/GaAs van der Waals heterostructures. Phys Chem Chem Phys 2024; 26:16327-16336. [PMID: 38805024 DOI: 10.1039/d4cp00560k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
By using first principles calculations, we theoretically investigate the electronic structures and the interfacial and optical properties of the two-dimensional tellurene (Te)-gallium arsenide (GaAs) van der Waals heterostructures (vdWHs), i.e., α-Te/GaAs and γ-Te/GaAs, formed using Te and GaAs monolayers. It has been demonstrated that, the semiconductor-semiconductor contacted α-Te/GaAs vdWH exhibits a type-II band alignment with a direct band gap of 0.28 eV while the metal-semiconductor contacted γ-Te/GaAs vdWH has a p-type Schottky contact with a Schottky barrier height (SBH) of 0.36 eV at the interface. The transition from type-II to type-III band alignment is observed firstly in the α-Te/GaAs vdWH when the in-plane biaxial strain is less than -5.2% and larger than 4.4%, meanwhile, the p-type Schottky contact to Ohmic contact transition may be realized in the γ-Te/GaAs vdWH when the in-plane biaxial strain is less than -2.4%. Finally, the maximum optical absorption coefficients of the α- and γ-Te/GaAs vdWHs have been found to be up to 31% and 29%, respectively, and may be modulated effectively by applying in-plane biaxial strain. The obtained results may be of importance in the design of nanoelectronic devices based on the proposed tellurene/GaAs vdWHs.
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Affiliation(s)
- Gen Li
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
| | - Hairui Bao
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
| | - Yange Peng
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
| | - Xi Fu
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
- College of Science, Hunan University of Science and Engineering, Yongzhou 425199, China
| | - Wenhu Liao
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
- School of Communication and Electronic Engineering, Jishou University, Jishou 416000, China
- Key Laboratory of Mineral Cleaner Production and Exploit of Green Functional Materials in Hunan Province, Jishou University, Jishou 416000, China
| | - Changqing Xiang
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
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3
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Sachdeva PK, Gupta S, Bera C. Engineering piezoelectricity at vdW interfaces of quasi-1D chains in 2D Tellurene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:215701. [PMID: 38335545 DOI: 10.1088/1361-648x/ad2805] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2023] [Accepted: 02/09/2024] [Indexed: 02/12/2024]
Abstract
Low-dimensional piezoelectrics have drawn attention to the realization in nano-scale devices with high integration density. A unique branch of 2D Tellurene bilayers formed of weakly interacting quasi-1D chains via van der Waals forces is found to exhibit piezoelectricity due to the semiconducting band gap and spatial inversion asymmetry. Various bilayer stackings are systematically examined using density functional theory, revealing optimal piezoelectricity when dipole arrangements are identical in each layer. Negative piezoelectricity has been observed in two of the stackings AA' and AA″ while other two stackings exhibit the usual positive piezoelectric effect. The layer-dependent 2D piezoelectricity (∣e222D ∣) increases with an increasing number of layers in contrast to the odd-even effect observed in h-BN and MoS2. Notably, the piezoelectric effect is observed in even-layered structures due to the homogeneous stacking in multilayers. Strain is found to enhance in-plane piezoelectricity by 4.5 times (-66.25 × 10-10C m-1at -5.1% strain) due to the increasing difference in Born effective charges of positively and negatively charged Te-atoms under compressive biaxial strains. Moreover, out-of-plane piezoelectricity is induced by applying an external electric field, thus implying Tellurene is a promising candidate for piezoelectric sensors.
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Affiliation(s)
- Parrydeep Kaur Sachdeva
- Institute of Nano Science and Technology, Sector-81, Knowledge City, Sahibzada Ajit Singh Nagar, Mohali, Punjab 140306, India
- University Institute of Engineering and Technology, Panjab University, Sector-25, Chandigarh 160014, India
- Department of Physics, Panjab University, Sector-14, Chandigarh 160014, India
| | - Shuchi Gupta
- University Institute of Engineering and Technology, Panjab University, Sector-25, Chandigarh 160014, India
| | - Chandan Bera
- Institute of Nano Science and Technology, Sector-81, Knowledge City, Sahibzada Ajit Singh Nagar, Mohali, Punjab 140306, India
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4
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Zhang W, Ma Z, Wang J, Shao B, Zuo X. Tunability of electronic properties in the 2D MoS 2/α-tellurene/WS 2 heterotrilayer via biaxial strain and electric field. Phys Chem Chem Phys 2024; 26:6362-6371. [PMID: 38315005 DOI: 10.1039/d3cp06002k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Alpha-tellurene (α-Te), a two-dimensional (2D) material that has been theoretically predicted and experimentally verified, has garnered significant attention due to its unique properties. In this study, we investigated the 2D trilayer MoS2/α-Te/WS2 van der Waals heterostructure with different stacking orders using first-principles calculations. Our results indicate that this heterotrilayer exhibits an intrinsic type-I band alignment and an indirect band gap similar to that of monolayer α-Te. Notably, the band edges of the heterostructure can be modulated by biaxial strain and an external electric field, enabling these edges to arise from different monolayers. This controlled manipulation facilitates the effective separation of photogenerated electron-hole pairs and prolongs the carrier lifetime. Moreover, the heterostructure can undergo a transition from an indirect to a direct band gap under biaxial compressive strain or a moderate negative electric field, and semiconductor-to-metal transition can also be achieved by intensifying the biaxial strain and external electric field. Overall, our research provides valuable theoretical insights into the potential applications of α-Te-based heterostructures, rendering them promising candidates for the next generation of nanodevices.
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Affiliation(s)
- Wenli Zhang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Zhuang Ma
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China
| | - Jing Wang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Bin Shao
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Nankai University, Tianjin 300350, China
| | - Xu Zuo
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Tianjin 300350, China
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5
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Xia Y, Peng L, Shu L, Wu A, Shao H, Li B, Zhang J, Sui Z, Zhu H, Zhang H. Strong Intervalley Scattering-Induced Renormalization of Electronic and Thermal Transport Properties and Selection Rule Analysis in 2D Tellurium. ACS NANO 2024. [PMID: 38320191 DOI: 10.1021/acsnano.3c12457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
The electron-phonon interaction (EPI) and phonon-phonon interactions are ubiquitous in promising two-dimensional (2D) semiconductors, determining both electronic and thermal transport properties. In this work, based on ab initio calculations, the effects of intervalley scattering on EPI and higher-order four-phonon interactions of α-Te and β-Te are investigated. Through the proposed selection rules for scattering channels and calculations of full electron-phonon scattering rates, we demonstrate that multiple nearly degenerate local valleys/peaks produce more scattering channels, resulting in stronger intervalley scattering over intravalley scattering. The lattice thermal conductivities of α-Te and β-Te are decreased by as much as 10.9% and 30.8% by considering EPI under the carrier concentration of 2 × 1013 cm-2 (n-type) at 300 K compared to those limited by three-phonon scattering, respectively. However, when further considering four-phonon scattering, EPI reduces the lattice thermal conductivities by 2.6% and 19.4% for α-Te and β-Te, respectively. Furthermore, it is revealed that the four-phonon interaction is more dominant in phonon transport for α-Te than that for β-Te due to the presence of an acoustic-optical phonon gap in α-Te. Finally, we demonstrate strong intervalley scattering induces significant renormalization effects from EPI on all the constituent parameters of thermoelectric performance. Our results show the contributions of intervalley scattering to the electronic properties as well as thermal transport properties in band-convergent thermoelectric materials are essential and highlight the potential of monolayer tellurium as a promising candidate for advanced thermoelectric applications.
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Affiliation(s)
- Yujie Xia
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Lei Peng
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Le Shu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Ao Wu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Hezhu Shao
- College of Electrical and Electronic Engineering, Wenzhou University, Wenzhou, Zhejiang 325035, China
| | - Ben Li
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Juan Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Zhan Sui
- Shanghai Institute of Laser and Plasma, China Academy of Engineering Physics, 197 Chengzhong Road, Jiading, Shanghai 201800, China
| | - Heyuan Zhu
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Hao Zhang
- Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, China
- Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
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Sun Y, Shen HX, Duan MY, Zhang T, Mu Y, Cheng C. Four-phonon scattering of so-As and improvement of the thermoelectric properties by increasing the buckling height. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:165702. [PMID: 38194719 DOI: 10.1088/1361-648x/ad1ca5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2023] [Accepted: 01/09/2024] [Indexed: 01/11/2024]
Abstract
In recent years, more and more thermoelectric (TE) materials have been discovered as the research boom of TE materials advances. However, due to the low conversion efficiency, most of the current TE materials cannot meet the commercial demand. The low-dimensional nanomaterials are promising to break the current status quo of low conversion efficiency of TE materials. Here, we predicted a stable two-dimensional TE material, namely so-As, based on density functional theory. The so-As has an ultra-low lattice thermal conductivity,κl= 1.829 W m-1K-1at 300 K, and when the temperature rises to 700 K theκlis only 0.788 W m-1K-1. This might be caused by the strong anharmonic interaction among the so-As phonon and the out-of-plane vibration of the low-frequency acoustic modes. Moreover, the maximumZTvalue of thep-type so-As is 0.18 at room temperature (0.45 at 700 K), while that of then-type can even reach 0.75 at 700 K. In addition, we have also studied the difference between the four- and three-phonon scattering rates. The increase of scattering channels leads to the ultra-lowκl, which is only 3.33 × 10-4W m-1K-1at room temperature, showing an almost adiabatic property. Finally, we adjust the TE properties of so-As by changing the buckling height. With the buckling height is increased by 2%, the scattering rate of so-As is extremely high. WhenTis 700 K, the maximumZTof then-type is 0.94 (p-type can also reach 0.7), which is 25% higher than the pristine one. Our work reveals the impact of buckling height on the TE figure of merit, which provides a direction for future search and regulation of the highZTTE materials.
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Affiliation(s)
- Yong Sun
- School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China
| | - Hui-Xue Shen
- School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China
| | - Man-Yi Duan
- School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China
| | - Tian Zhang
- School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China
| | - Yi Mu
- School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China
| | - Cai Cheng
- School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610101, People's Republic of China
- School of Materials and Energy, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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7
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Chen A, Tong H, Wu CW, Li SY, Jia PZ, Zhou WX. First-principles prediction of the thermal conductivity of two configurations of difluorinated graphene monolayer. Phys Chem Chem Phys 2023; 26:421-429. [PMID: 38078535 DOI: 10.1039/d3cp04923j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
Lattice thermal conductivity (κL) plays a crucial role in the thermal management of electronic devices. In this study, we systematically investigate the thermal transport properties of monolayer fluorinated graphene using a combination of machine learning-based interatomic potentials and the phonon Boltzmann transport equation. At a temperature of 300 K, we find that the κL values for chair-configured fluorinated graphene monolayers are 184.24 W m-1 K-1 in the zigzag direction and 205.57 W m-1 K-1 in the armchair direction. For the boat configuration, the κL values are 120.45 W m-1 K-1 and 64.26 W m-1 K-1 in the respective directions. The disparities in κL between these two configurations predominantly stem from differences in phonon relaxation times, which can be elucidated by examining the Grüneisen parameters representing the degree of anharmonicity. A more in-depth analysis of bond strengths, as assessed by the crystal orbital Hamiltonian population, reveals that the stronger in-plane CC bonds in chair-configured fluorinated graphene monolayers are the primary contributors to the observed variations in anharmonicity.
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Affiliation(s)
- Ao Chen
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China.
| | - Hua Tong
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China.
| | - Cheng-Wei Wu
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China.
| | - Shi-Yi Li
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China.
| | - Pin-Zhen Jia
- School of Science, Hunan Institute of Technology, Hengyang 421002, China.
| | - Wu-Xing Zhou
- School of Materials Science and Engineering & Hunan Provincial Key Laboratory of Advanced Materials for New Energy Storage and Conversion, Hunan University of Science and Technology, Xiangtan 411201, China.
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Xing C, Li Z, Wang Z, Zhang S, Xie Z, Zhu X, Peng Z. Chemical Scissors Tailored Nano-Tellurium with High-Entropy Morphology for Efficient Foam-Hydrogel-Based Solar Photothermal Evaporators. NANO-MICRO LETTERS 2023; 16:47. [PMID: 38063910 PMCID: PMC10709277 DOI: 10.1007/s40820-023-01242-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2023] [Accepted: 10/07/2023] [Indexed: 10/11/2024]
Abstract
The development of tellurium (Te)-based semiconductor nanomaterials for efficient light-to-heat conversion may offer an effective means of harvesting sunlight to address global energy concerns. However, the nanosized Te (nano-Te) materials reported to date suffer from a series of drawbacks, including limited light absorption and a lack of surface structures. Herein, we report the preparation of nano-Te by electrochemical exfoliation using an electrolyzable room-temperature ionic liquid. Anions, cations, and their corresponding electrolytic products acting as chemical scissors can precisely intercalate and functionalize bulk Te. The resulting nano-Te has high morphological entropy, rich surface functional groups, and broad light absorption. We also constructed foam hydrogels based on poly (vinyl alcohol)/nano-Te, which achieved an evaporation rate and energy efficiency of 4.11 kg m-2 h-1 and 128%, respectively, under 1 sun irradiation. Furthermore, the evaporation rate was maintained in the range 2.5-3.0 kg m-2 h-1 outdoors under 0.5-1.0 sun, providing highly efficient evaporation under low light conditions.
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Affiliation(s)
- Chenyang Xing
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, 518060, People's Republic of China
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zihao Li
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, 518060, People's Republic of China
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ziao Wang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Shenzhen, 518172, People's Republic of China
| | - Shaohui Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Zhongjian Xie
- Institute of Pediatrics, Shenzhen Children's Hospital, Shenzhen, 518038, Guangdong, People's Republic of China
| | - Xi Zhu
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Shenzhen, 518172, People's Republic of China.
| | - Zhengchun Peng
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen, 518060, People's Republic of China.
- Center for Stretchable Electronics and NanoSensors, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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9
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Jin D, Zhang P, Tian Z, Zhang Z, Yuan Y, Liu Y, Lu Z, Xiong R. The effect of four-phonon interaction on phonon thermal conductivity of hexagonal VTe 2 and puckered pentagonal VTe 2. Phys Chem Chem Phys 2023; 25:28669-28676. [PMID: 37849319 DOI: 10.1039/d3cp03218c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
The traditional view is that complex structures have lower lattice thermal conductivity. However, it is observed that complex structures have higher lattice thermal conductivity than simple atomic structures in VTe2 systems after considering the four-phonon scattering effect. In this work, we calculate the lattice thermal conductivity of an H-VTe2 monolayer with a simple atomic structure and that of a PP-VTe2 monolayer with a complex atomic arrangement using first-principles calculations combined with the Boltzmann transport theory under the conditions of with and without the four-phonon scattering process. Our findings reveal that the lattice thermal conductivity of the PP-VTe2 monolayer along the x or y direction is 3-4 times lower than that of the H-VTe2 monolayer when only considering the three-phonon scattering process. After taking into account the four-phonon scattering process, the lattice thermal conductivity of both monolayers decreases. For the H-VTe2 monolayer, the lattice thermal conductivity decreases by 88.7% (from 1.33 to 0.15 W m-1 K-1) compared to only considering the three-phonon scattering process, mainly due to strong four-phonon scattering. In addition, the PP-VTe2 monolayer experiences a lower decrease in lattice thermal conductivity, with reductions of 12.5% (from 0.4 to 0.35 W m-1 K-1) and 11.7% (from 0.34 to 0.3 W m-1 K-1) in the x and y directions, respectively, because of the weak four-phonon scattering. Notably, the lattice thermal conductivity with the four-phonon scattering process of the H-VTe2 monolayer is twice as low as that of the PP-VTe2 monolayer. Hence, our findings suggest that even simple atomic structures can exhibit lower lattice thermal conductivity than complex structures when considering four-phonon interaction.
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Affiliation(s)
- Dan Jin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
| | - Pan Zhang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
| | - Zhixue Tian
- Hebei Key Laboratory of Photophysics Research and Application, College of Physics, Hebei Normal University, Shijiazhuang 050024, People's Republic of China
| | - Zhenhua Zhang
- School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China
| | - Youyuan Yuan
- Wuhan Britain-China School, Wuhan 430030, People's Republic of China
| | - Yong Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
| | - Zhihong Lu
- School of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, People's Republic of China
| | - Rui Xiong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China.
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10
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Zhang K, Yang R, Sun Z, Chen X, Huang S, Wang N. Layer-dependent excellent thermoelectric materials: from monolayer to trilayer tellurium based on DFT calculation. Front Chem 2023; 11:1295589. [PMID: 37901161 PMCID: PMC10602905 DOI: 10.3389/fchem.2023.1295589] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Accepted: 09/27/2023] [Indexed: 10/31/2023] Open
Abstract
Monoelemental two-dimensional (2D) materials, which are superior to binary and ternary 2D materials, currently attract remarkable interest due to their fascinating properties. Though the thermal and thermoelectric (TE) transport properties of tellurium have been studied in recent years, there is little research about the thermal and TE properties of multilayer tellurium with interlayer interaction force. Herein, the layer modulation of the phonon transport and TE performance of monolayer, bilayer, and trilayer tellurium is investigated by first-principles calcuations. First, it was found that thermal conductivity as a function of layer numbers possesses a robust, unusually non-monotonic behavior. Moreover, the anisotropy of the thermal transport properties of tellurium is weakened with the increase in the number of layers. By phonon-level systematic analysis, we found that the variation of phonon transport under the layer of increment was determined by increasing the phonon velocity in specific phonon modes. Then, the TE transport properties showed that the maximum figure of merit (ZT) reaches 6.3 (p-type) along the armchair direction at 700 K for the monolayer and 6.6 (p-type) along the zigzag direction at 700 K for the bilayer, suggesting that the TE properties of the monolayer are highly anisotropic. This study reveals that monolayer and bilayer tellurium have tremendous opportunities as candidates in TE applications. Moreover, further increasing the layer number to 3 hinders the improvement of TE performance for 2D tellurium.
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Affiliation(s)
- Kexin Zhang
- Air Traffic Control and Navigation College, Air Force Engineering University, Xi’an, China
| | - Rennong Yang
- Air Traffic Control and Navigation College, Air Force Engineering University, Xi’an, China
| | - Zhehao Sun
- Research School of Chemistry, Australian National University, Canberra, ACT, Australia
| | - Xihao Chen
- School of Materials Science and Engineering, Chongqing University of Arts and Sciences, Chongqing, China
| | - Sizhao Huang
- School of Science, Harbin University of Science and Technology, Harbin, China
| | - Ning Wang
- Key Laboratory of High-Performance Scientific Computation, School of Science, Xihua University, Chengdu, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
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11
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Zhang T, Ning S, Zhang Z, Qi N, Chen Z. Dimensionality reduction induced synergetic optimization of the thermoelectric properties in Bi 2Si 2X 6 (X = Se, Te) monolayers. Phys Chem Chem Phys 2023; 25:25029-25037. [PMID: 37698589 DOI: 10.1039/d3cp02479b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
Different from three-dimensional bulk compounds, two-dimensional monolayer compounds exhibit much better thermoelectric performance on account of the quantum confinement and interface effect. Here, we present a systematic study on the electronic and thermal transport properties of bulk and monolayer Bi2Si2X6 (X = Se, Te) through theoretical calculations using density functional theory based on first-principles and Boltzmann transport theory. Monolayer Bi2Si2X6 are chemically, mechanically and thermodynamically stable semiconductors with suitable band gaps, and they have lower lattice thermal conductivity (κL) in the a/b direction than their bulk counterparts. The calculated κL of monolayer Bi2Si2Se6 (Bi2Si2Te6) is as low as 0.72 (0.95) W m-1 K-1 at 700 K. Moreover, monolayer Bi2Si2X6 exhibit a higher Seebeck coefficient compared with bulk Bi2Si2X6 owing to the sharper peaks in the electronic density of states (DOS). This results in a significant increase in power factor by dimensionality reduction. Combined with the synergetically suppressed thermal conductivity, the maximum ZT values for monolayer Bi2Si2Se6 and Bi2Si2Te6 are significantly enhanced up to 5.03 and 2.87 with p-type doping at 700 K, which are more than 2 times that of the corresponding bulk compounds. These results demonstrate the superb thermoelectric performance of monolayer Bi2Si2X6 for promising thermoelectric conversion applications.
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Affiliation(s)
- Tingting Zhang
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China.
| | - Suiting Ning
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China.
| | - Ziye Zhang
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China.
| | - Ning Qi
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China.
| | - Zhiquan Chen
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China.
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12
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Shangguan L, He LB, Ran YT, Hong H, Zhu JH, Gao YT, Sun LT. Hydrothermal Synthesis of Te Nanosheets: Growth Mechanism and Electrical Property. ACS APPLIED MATERIALS & INTERFACES 2023; 15:38707-38715. [PMID: 37527542 DOI: 10.1021/acsami.3c08118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Hydrothermal synthesis is a highly efficient way to yield multiform Te nanosheets. However, the growth mechanisms and property discrepancies between different types of Te nanosheets are still unclear. In this paper, we perform an investigation on this issue by monitoring the hydrothermally synthesized Te nanosheets at different growth stages with transmission electron microscopy and electrical tests. Three main types of Te nanosheets and their variants are revealed including trapezoidal and "V"-shaped configurations. It is found that the different types of Te nanosheets dominate at different reaction stages, indicating a sequential growth scenario. Surfactants and surface energy co-determine the growth kinetics, while the crystallographic attachments lead to specifically included angles of 74° and 41° in the "V"-shaped Te nanosheets. The fractions of the three main types of Te nanosheets as a function of reaction time are statistically tracked, and their crystalline structures, interfaces, and preferential growth orientations are uncovered. Moreover, the electrical properties of the Te nanosheets are tested, and the results show an interface-related feature. These findings provide some new insights into the synthesis and property of low-dimensional Te functional materials.
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Affiliation(s)
- Lei Shangguan
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Long-Bing He
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
- Centre for Advanced Materials and Manufacture, Joint Research Institute of Southeast University and Monash University, Suzhou 215123, P. R. China
| | - Ya-Ting Ran
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Hua Hong
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Jiong-Hao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Yu-Tian Gao
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
| | - Li-Tao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, Jiangsu 210096, P. R. China
- Centre for Advanced Materials and Manufacture, Joint Research Institute of Southeast University and Monash University, Suzhou 215123, P. R. China
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13
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Dai M, Wang C, Qiang B, Jin Y, Ye M, Wang F, Sun F, Zhang X, Luo Y, Wang QJ. Long-wave infrared photothermoelectric detectors with ultrahigh polarization sensitivity. Nat Commun 2023; 14:3421. [PMID: 37296149 DOI: 10.1038/s41467-023-39071-7] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 05/22/2023] [Indexed: 06/12/2023] Open
Abstract
Filter-free miniaturized polarization-sensitive photodetectors have important applications in the next-generation on-chip polarimeters. However, their polarization sensitivity is thus far limited by the intrinsic low diattenuation and inefficient photon-to-electron conversion. Here, we implement experimentally a miniaturized detector based on one-dimensional tellurium nanoribbon, which can significantly improve the photothermoelectric responses by translating the polarization-sensitive absorption into a large temperature gradient together with the finite-size effect of a perfect plasmonic absorber. Our devices exhibit a zero-bias responsivity of 410 V/W and an ultrahigh polarization ratio (2.5 × 104), as well as a peak polarization angle sensitivity of 7.10 V/W•degree, which is one order of magnitude higher than those reported in the literature. Full linear polarimetry detection is also achieved with the proposed device in a simple geometrical configuration. Polarization-coded communication and optical strain measurement are demonstrated showing the great potential of the proposed devices. Our work presents a feasible solution for miniaturized room-temperature infrared photodetectors with ultrahigh polarization sensitivity.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bo Qiang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fakun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuran Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yu Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
- Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
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14
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Zhou L, Wang Q, Xu M, Hu C, Deng X, Li Y, Lv B, Wang W. Excellent thermoelectric properties of the Tl 2S 3 monolayer for medium-temperature applications. NANOSCALE 2023; 15:7971-7979. [PMID: 37067058 DOI: 10.1039/d2nr07006e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Exploring materials with high thermoelectric (TE) performance can alleviate energy pressure and protect the environment, and thus, TE materials have attracted extensive attention in the new energy field. In this paper, we systematically study the TE properties of Tl2S3 using first-principles combined with Boltzmann transport theory (BTE). The calculation results show an excellent power factor (1.12 × 10-2 W m-1 K-2) and ultra-low lattice thermal conductivity (kl = 0.88 W m-1 K-1) at room temperature. Through analysis, we attribute the ultra-low kl of Tl2S3 to the lower phonon group velocity (vg) and larger phonon anharmonicity. Meanwhile, discussion of chemical bonding showed that the filling of the anti-bonding state leads to the weakening of the Tl-S chemical bond, resulting in low vg. Furthermore, this research also investigates the scattering processes (the out-of-plane acoustic mode (ZA) + optical mode (O) → O (ZA + O → O), the in-plane transverse acoustic mode (TA) + O → O (TA + O → O), and the in-plane longitudinal acoustic mode (LA) + O → O (LA + O → O)), from which we find that 2D Tl2S3 possesses strong acoustic-optical scattering. Based on the analysis of electron transport properties under electron-phonon coupling, 2D Tl2S3, as a novel TE material, exhibits a ZT value as high as 2.8 at 400 K. Our calculations suggest that Tl2S3 is a potential TE material at medium temperature.
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Affiliation(s)
- Lang Zhou
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Qi Wang
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Mei Xu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Chengwei Hu
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Xue Deng
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Yumin Li
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Bing Lv
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
| | - Wenzhong Wang
- School of Physics and Electronic Science, Guizhou Normal University, Guiyang 550025, China.
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China
- School of Science, Minzu University of China, Beijing 100081, China
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15
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Lu J, He Y, Ma C, Ye Q, Yi H, Zheng Z, Yao J, Yang G. Ultrabroadband Imaging Based on Wafer-Scale Tellurene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211562. [PMID: 36893428 DOI: 10.1002/adma.202211562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 03/02/2023] [Indexed: 05/19/2023]
Abstract
High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 107 A W-1 , 8.2 × 109 % and 4.5 × 1015 Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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16
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Chen A, Ye S, Wang Z, Han Y, Cai J, Li J. Machine-learning-assisted rational design of 2D doped tellurene for fin field-effect transistor devices. PATTERNS 2023; 4:100722. [PMID: 37123447 PMCID: PMC10140614 DOI: 10.1016/j.patter.2023.100722] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 10/18/2022] [Accepted: 03/08/2023] [Indexed: 04/09/2023]
Abstract
Fin field-effect transistors (FinFETs) have been widely used in electronic devices on account of their excellent performance, but this new type of device is facing many challenges because of size constraints. Two-dimensional (2D) materials with a layer structure can meet the required thickness of FinFETs and provide ideal carrier transport performance. In this work, we used 2D tellurene as the parent material and modified it with doping techniques to improve electronic device performance. High-performance FinFET devices were prepared with 23 systems screened from 385 doping systems by a combination of first-principle calculations and a machine-learning (ML) model. Moreover, theoretical calculations demonstrated that 1S1@Te and 2S2@Te have high carrier mobility and stability with an electron mobility and a hole mobility of 6.211 × 104 cm2 V-1 S-1 and 1.349 × 104 cm2 V-1 S-1, respectively. This work can provide a reference for subsequent experiments and advance the development of functional materials by using an ML-assisted design paradigm.
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Affiliation(s)
- An Chen
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Simin Ye
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhilong Wang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yanqiang Han
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Junfei Cai
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jinjin Li
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
- Corresponding author
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17
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Singh J, Singh G, Tripathi SK. Janus zirconium halide ZrXY (X, Y = Br, Cl and F) monolayers with high lattice thermal conductivity and strong visible-light absorption. Phys Chem Chem Phys 2023; 25:4690-4700. [PMID: 36412485 DOI: 10.1039/d2cp04002f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In this work, the structural, mechanical, and electronic properties of Janus zirconium halide monolayers have been systematically investigated using the first-principles calculations. After verifying the mechanical and dynamical stability of these monolayers, their electronic band structures have been predicted. These Janus monolayers have band gaps of 1.51-1.96 eV, which indicates their suitability for visible light absorption. The relaxation time and mobility of charge carriers are estimated using deformation potential theory, and the mobility of these monolayers has been predicted to be of the order ∼102 cm2 V-1 s-1. The lattice thermal conductivity has been calculated by solving the phonon Boltzmann transport equation using ShengBTE software. At 300 K, the in-plane lattice thermal conductivity has values of 76.94, 54.18, and 95.87 W m-1 K-1 for ZrBrCl, ZrBrF, and ZrClF monolayers, respectively. The higher group velocity and small anharmonic three-phonon scattering rate are the main reasons for the high lattice thermal conductivity of the ZrClF monolayer. The real and imaginary parts of the dielectric function are calculated to find the absorption coefficients and these monolayers have a high absorption coefficient of the order ∼106 cm-1 in the visible light range. Our results show that Janus zirconium halide monolayers are potential candidates for optoelectronic and photocatalytic applications.
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Affiliation(s)
- Janpreet Singh
- Department of Physics, Akal University, Talwandi Sabo, Punjab, 151302, India.
| | - Gurinder Singh
- Department of UIET, Panjab University SSG Regional Centre, Hoshiarpur, Punjab, 146021, India
| | - Surya Kant Tripathi
- Department of Physics, Centre of Advanced Study in Physics, Panjab University, Chandigarh, 160014, India
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18
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Duan F, Wei D, Chen A, Zheng X, Wang H, Qin G. Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications. NANOSCALE 2023; 15:1459-1483. [PMID: 36541854 DOI: 10.1039/d2nr06413h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the development of chip technology, the density of transistors on integrated circuits is increasing and the size is gradually shrinking to the micro-/nanoscale, with the consequent problem of heat dissipation on chips becoming increasingly serious. For device applications, efficient heat dissipation and thermal management play a key role in ensuring device operation reliability. In this review, we summarize the thermal management applications based on 2D materials from both theoretical and experimental perspectives. The regulation approaches of thermal transport can be divided into two main types: intrinsic structure engineering (acting on the intrinsic structure) and non-structure engineering (applying external fields). On one hand, the thermal transport properties of 2D materials can be modulated by defects and disorders, size effect (including length, width, and the number of layers), heterostructures, structure regulation, doping, alloy, functionalizing, and isotope purity. On the other hand, strain engineering, electric field, and substrate can also modulate thermal transport efficiently without changing the intrinsic structure of the materials. Furthermore, we propose a perspective on the topic of using magnetism and light field to modulate the thermal transport properties of 2D materials. In short, we comprehensively review the existing thermal management modulation applications as well as the latest research progress, and conclude with a discussion and perspective on the applications of 2D materials in thermal management, which will be of great significance to the development of next-generation nanoelectronic devices.
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Affiliation(s)
- Fuqing Duan
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Donghai Wei
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Ailing Chen
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Xiong Zheng
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
| | - Huimin Wang
- Hunan Key Laboratory for Micro-Nano Energy Materials & Device and School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Guangzhao Qin
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.
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Huang Y, Yuan H, Chen H. High thermoelectric performance of two-dimensional layered AB 2Te 4 (A = Sn, Pb; B = Sb, Bi) ternary compounds. Phys Chem Chem Phys 2023; 25:1808-1818. [PMID: 36598382 DOI: 10.1039/d2cp05258j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
The thermoelectric properties of two-dimensional layered ternary compounds AB2Te4, in which A (Sn, Pb) and B(Sb, Bi) are group-IV and group-V cations, respectively, were investigated by using first-principles based transport theory. These septuple-atom-layer monolayers have wider band gaps with respect to their bulks, which extend their operating temperature and inhibit the bipolar carrier conduction and thermal conductivity, and more importantly, their energy bands exhibit multiple valence band convergence to a narrow energy range near the Brillouin zone center, which induces an optimal p-type power factor up to 10.94-32.11 W m-1 K-2 at room temperature. Moreover, these monolayers contain heavy atomic masses and high polarizability of some chemical bonds, leading to small group velocities of phonons and anharmonic phonon behavior that produce an intrinsic lattice thermal conductivity as low as 0.79-3.13 W m-1 K-1 at room temperature. Thus, these monolayers act as p-type thermoelectric materials with thermoelectric figure of merit of up to 2.6-5.5 for SnSb2Te4, 0.7-2.2 for PbSb2Te4, and 1.6-4.2 for PbBi2Te4 in the temperature range of 300 to 750 K, and 4.5-5.9 for SnBi2Te4 in the temperature range of 300 to 450 K.
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Affiliation(s)
- Yuhong Huang
- School of Physics Science and Technology, Southwest University, Chongqing 400715, China.
| | - Hongkuan Yuan
- School of Physics Science and Technology, Southwest University, Chongqing 400715, China.
| | - Hong Chen
- School of Physics Science and Technology, Southwest University, Chongqing 400715, China.
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20
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Wang G, Guan Y, Wang Y, Ding Y, Yang L. Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor. MATERIALS (BASEL, SWITZERLAND) 2023; 16:738. [PMID: 36676475 PMCID: PMC9862747 DOI: 10.3390/ma16020738] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2022] [Revised: 01/03/2023] [Accepted: 01/09/2023] [Indexed: 06/17/2023]
Abstract
Laser irradiation, as a kind of post-fabrication method for two-dimensional (2D) materials, is a promising way to tune the properties of materials and the performance of corresponding nano-devices. As the memristor has been regarded as an excellent candidate for in-memory devices in next-generation computing system, the application of laser irradiation in developing excellent memristor based on 2D materials should be explored deeply. Here, tellurene (Te) flakes are exposed to a 532 nm laser in the air atmosphere to investigate the evolutions of the surface morphology and atom structures under different irradiation parameters. Laser is capable of thinning the flakes, inducing amorphous structures, oxides and defects, and forming nanostructures by controlling the irradiation power and time. Furthermore, the laser-induced oxides and defects promote the migration of metal ions in Te, resulting in the formation of the conductive filaments, which provides the switching behavers of volatile memristor, opening a route to the development of next-generation nano-devices.
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Affiliation(s)
- Genwang Wang
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Yanchao Guan
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Yang Wang
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Ye Ding
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Lijun Yang
- Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China
- School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
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21
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Chen GX, Chen Z, Du RY, Liu S, Wang DD, Zhang JM. Adsorption and sensing of formaldehyde on pristine and noble metal doped tellurene: A first-principles investigation. Chem Phys Lett 2023. [DOI: 10.1016/j.cplett.2022.140244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
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22
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Kalantari MH, Zhang X. Thermal Transport in 2D Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:nano13010117. [PMID: 36616026 PMCID: PMC9824888 DOI: 10.3390/nano13010117] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 12/20/2022] [Accepted: 12/22/2022] [Indexed: 06/12/2023]
Abstract
In recent decades, two-dimensional materials (2D) such as graphene, black and blue phosphorenes, transition metal dichalcogenides (e.g., WS2 and MoS2), and h-BN have received illustrious consideration due to their promising properties. Increasingly, nanomaterial thermal properties have become a topic of research. Since nanodevices have to constantly be further miniaturized, thermal dissipation at the nanoscale has become one of the key issues in the nanotechnology field. Different techniques have been developed to measure the thermal conductivity of nanomaterials. A brief review of 2D material developments, thermal conductivity concepts, simulation methods, and recent research in heat conduction measurements is presented. Finally, recent research progress is summarized in this article.
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Yan S, Wang Y, Tao F, Ren J. High-Throughput Estimation of Phonon Thermal Conductivity from First-Principles Calculations of Elasticity. J Phys Chem A 2022; 126:8771-8780. [DOI: 10.1021/acs.jpca.2c06286] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Shenshen Yan
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Yi Wang
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Fang Tao
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
| | - Jie Ren
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai200092, China
- Shanghai Research Institute for Intelligent Autonomous Systems, Tongji University, Shanghai200092, China
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24
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Zhou E, Wei D, Wu J, Qin G, Hu M. Electrically-driven robust tuning of lattice thermal conductivity. Phys Chem Chem Phys 2022; 24:17479-17484. [PMID: 35822513 DOI: 10.1039/d2cp01117d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The two-dimensional (2D) materials, represented by graphene, stand out in the electrical industry applications of the future and have been widely studied. As commonly existing in electronic devices, the electric field has been extensively utilized to modulate the performance. However, how the electric field regulates thermal transport is rarely studied. Herein, we investigate the modulation of thermal transport properties by applying an external electric field ranging from 0 to 0.4 V Å-1, with bilayer graphene, monolayer silicene, and germanene as study cases. The monotonically decreasing trend of thermal conductivity in all three materials is revealed. A significant effect on the scattering rate is found to be responsible for the decreased thermal conductivity driven by the electric field. Further evidence shows that the reconstruction of internal electric field and generation of induced charges lead to increased scattering rate from strong phonon anharmonicity. Thus, the ultralow thermal conductivity emerges with the application of external electric fields. Applying an external electric field to regulate thermal conductivity illustrates a constructive idea for highly efficient thermal management.
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Affiliation(s)
- E Zhou
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
| | - Donghai Wei
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
| | - Jing Wu
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
| | - Guangzhao Qin
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
| | - Ming Hu
- Department of Mechanical Engineering, University of South Carolina, Columbia, SC, 29208, USA.
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25
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Taheri A, Pisana S, Singh CV. Extraordinary lattice thermal conductivity of gold sulfide monolayers. NANOSCALE ADVANCES 2022; 4:2873-2883. [PMID: 36132007 PMCID: PMC9418960 DOI: 10.1039/d2na00019a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Accepted: 05/24/2022] [Indexed: 06/15/2023]
Abstract
Gold sulfide monolayers (α-, β-Au2S, α-, β-, γ-AuS) have emerged as a new class of two-dimensional (2D) materials with appealing properties such as high thermal and dynamical stability, oxidation resistance, and excellent electron mobility. However, their thermal properties are still unexplored. In this study, based on first-principles calculations and the Peierls-Boltzmann transport equation, we report the lattice thermal conductivity (κ) and related phonon thermal properties of all members of this family. Our results show that gold sulfide monolayers have lattice thermal conductivity spanning almost three orders of magnitude, from 0.04 W m-1 K-1 to 10.62 W m-1 K-1, with different levels of anisotropy. Particularly, our results demonstrate that β-Au2S with ultralow κ aa = 0.06 W m-1 K-1 and κ bb = 0.04 W m-1 K-1 along the principal in-plane directions, has one of the lowest κ values that have been reported for a 2D material, well below that of PbSe. This extremely low lattice thermal conductivity can be attributed to its flattened phonon branches and low phonon group velocity, high anharmonicity, and short phonon lifetimes. Our results may provide insight into the application of gold sulfide monolayers as thermoelectric materials, and motivate future κ measurements of gold sulfide monolayers.
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Affiliation(s)
- Armin Taheri
- Department of Electrical Engineering and Computer Science, York University Toronto Ontario M3J1P3 Canada
| | - Simone Pisana
- Department of Electrical Engineering and Computer Science, York University Toronto Ontario M3J1P3 Canada
- Department of Physics and Astronomy, York University Toronto Ontario M3J1P3 Canada
| | - Chandra Veer Singh
- Department of Materials Science and Engineering, University of Toronto Toronto Ontario M5S 3E4 Canada
- Department of Mechanical and Industrial Engineering, University of Toronto Toronto Ontario M5S 3G8 Canada
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26
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Lozovoy KA, Izhnin II, Kokhanenko AP, Dirko VV, Vinarskiy VP, Voitsekhovskii AV, Fitsych OI, Akimenko NY. Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2221. [PMID: 35808055 PMCID: PMC9268513 DOI: 10.3390/nano12132221] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 06/23/2022] [Accepted: 06/24/2022] [Indexed: 02/01/2023]
Abstract
Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications.
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Affiliation(s)
- Kirill A. Lozovoy
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Ihor I. Izhnin
- Scientific Research Company “Electron-Carat”, Stryjska St. 202, 79031 Lviv, Ukraine;
| | - Andrey P. Kokhanenko
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Vladimir V. Dirko
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Vladimir P. Vinarskiy
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Alexander V. Voitsekhovskii
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Olena I. Fitsych
- P. Sagaidachny National Army Academy, Gvardijska St. 32, 79012 Lviv, Ukraine;
| | - Nataliya Yu. Akimenko
- Department of Engineering Systems and Technosphere Safety, Pacific National University, Tihookeanskaya St. 136, 680035 Khabarovsk, Russia;
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27
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Yan Z, Yang H, Yang Z, Ji C, Zhang G, Tu Y, Du G, Cai S, Lin S. Emerging Two-Dimensional Tellurene and Tellurides for Broadband Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200016. [PMID: 35244332 DOI: 10.1002/smll.202200016] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Revised: 01/30/2022] [Indexed: 06/14/2023]
Abstract
As with all stylish 2D functional materials, tellurene and tellurides possessing excellent physical and chemical properties such as high environmental stability, tunable narrow bandgap, and lower thermal conductivity, have aroused the great interest of the researchers. These properties of such materials also form the basis for relatively newfangled scholarly fields involving advanced topics, especially for broadband photodetectors. Integrating the excellent properties of many 2D materials, tellurene/telluride-based photodetectors show great flexibility, higher frequency response or faster time response, high signal-to-noise ratio, and so on, which make them leading the frontier of photodetector research. To fully understand the excellent properties of tellurene/tellurides and their optoelectronic applications, the recent advances in tellurene/telluride-based photodetectors are maximally summarized. Benefiting from the solid research in this field, the challenges and opportunities of tellurene/tellurides for future optoelectronic applications are also discussed in this review, which might provide possibilities for the realization of state-of-the-art high-performance tellurene/telluride-based devices.
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Affiliation(s)
- Zihan Yan
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Hao Yang
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Zhuo Yang
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Chengao Ji
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Yusong Tu
- College of Physics Science and Technology, Yangzhou University, Jiangsu, 225009, China
| | - Guangyu Du
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon, 999077, Hong Kong
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon, 999077, Hong Kong
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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28
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Singh J, Jakhar M, Kumar A. Stability, optoelectronic and thermal properties of two-dimensional Janus α-Te 2S. NANOTECHNOLOGY 2022; 33:215405. [PMID: 35158350 DOI: 10.1088/1361-6528/ac54e1] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2022] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janusα-Te2S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap (∼1.5 eV), ultrahigh carrier mobility (∼103cm2V-1s-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference (ΔV = 1.07 eV) on two surfaces of Janusα-Te2S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janusα-Te2S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e.α-Te2S/T-PdS2,α-Te2S/BP andα-Te2S/H-MoS2are ∼21%, ∼19% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m-1K-1) of Janusα-Te2S makes it a promising material for the fabrication of next-generation thermal energy conversion devices.
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Affiliation(s)
- Jaspreet Singh
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
| | - Mukesh Jakhar
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
| | - Ashok Kumar
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
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29
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Liu G, Guo A, Cao F, Ju W, Wang Z, Wang H, Li GL, Gao Z. Ultrahigh thermoelectric performance of Janus α-STe 2 and α-SeTe 2 monolayers. Phys Chem Chem Phys 2022; 24:28295-28305. [DOI: 10.1039/d2cp03659b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Janus α-STe2 and α-SeTe2 monolayers are investigated systematically using first-principles calculations combined with semiclassical Boltzmann transport theory.
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Affiliation(s)
- Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Aiqing Guo
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Fengli Cao
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Weiwei Ju
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Zhaowu Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Hui Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Guo-Ling Li
- Chemistry and Chemical Engineering Guangdong Laboratory, Shantou 515063, People's Republic of China
| | - Zhibin Gao
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, People's Republic of China
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30
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Chen SB, Liu G, Yan WJ, Hu CE, Chen XR, Geng HY. Biaxial Tensile Strain-Induced Enhancement of Thermoelectric Efficiency of α-Phase Se 2Te and SeTe 2 Monolayers. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 12:40. [PMID: 35009989 PMCID: PMC8746480 DOI: 10.3390/nano12010040] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 12/07/2021] [Accepted: 12/17/2021] [Indexed: 06/14/2023]
Abstract
Thermoelectric (TE) materials can convert waste heat into electrical energy, which has attracted great interest in recent years. In this paper, the effect of biaxial-tensile strain on the electronic properties, lattice thermal conductivity, and thermoelectric performance of α-phase Se2Te and SeTe2 monolayers are calculated based on density-functional theory and the semiclassical Boltzmann theory. The calculated results show that the tensile strain reduces the bandgap because the bond length between atoms enlarges. Moreover, the tensile strain strengthens the scatting rate while it weakens the group velocity and softens the phonon model, leading to lower lattice thermal conductivity kl. Simultaneously, combined with the weakened kl, the tensile strain can also effectively modulate the electronic transport coefficients, such as the electronic conductivity, Seebeck coefficient, and electronic thermal conductivity, to greatly enhance the ZT value. In particular, the maximum n-type doping ZT under 1% and 3% strain increases up to six and five times higher than the corresponding ZT without strain for the Se2Te and SeTe2 monolayers, respectively. Our calculations indicated that the tensile strain can effectively enhance the thermoelectric efficiency of Se2Te and SeTe2 monolayers and they have great potential as TE materials.
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Affiliation(s)
- Shao-Bo Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China;
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China;
| | - Wan-Jun Yan
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, China;
| | - Cui-E Hu
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China
| | - Xiang-Rong Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610064, China;
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China;
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31
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Chen S, Chen X, Zeng Z, Geng H, Yin H. The coexistence of superior intrinsic piezoelectricity and thermoelectricity in two-dimensional Janus α-TeSSe. Phys Chem Chem Phys 2021; 23:26955-26966. [PMID: 34842246 DOI: 10.1039/d1cp04749c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Piezoelectric and thermoelectric materials that can directly convert mechanical and thermal energies into electricity have attracted great interest because of their practical applications in overcoming the challenges of the energy crisis. In this research, a new family of two-dimensional (2D) group-VI Janus ternary compounds with α and γ phases are predicted. After the stability testing, only the α-TeSSe monolayer has dynamic and thermal stability. The band structure and the optic, piezoelectric, and thermoelectric performances of the Janus α-TeSSe monolayer are calculated via first-principles calculations. Janus α-TeSSe is a narrow indirect bandgap semiconductor with a value of 0.953 eV at the HSE06 functional considering the spin-orbit coupling (SOC), which is beneficial to its thermoelectric performance, and its excellent absorption coefficients indicate that it may be a promising optoelectronic material. The piezoelectric calculations show that Janus α-TeSSe exhibits not only appreciable in-plane piezoelectricity (d11 = 17.17 pm V-1) but also superior vertical piezoelectricity (d31 = 0.22 pm V-1). Furthermore, a new TransOpt code is used to calculate the electrical transport coefficients with a constant electron-phonon coupling approximation, which is more accurate than the constant relaxation time approximation. The origin of ultralow lattice thermal conductivity is also discussed in detail. Finally, ultrahigh ZT values of 0.77 and 1.95 occur in n-type and p-type doping at 600 K, respectively, indicating that it is a promising thermoelectric material. Our work demonstrates that Janus α-TeSSe monolayers have potential applications in optoelectronic, piezoelectric, and thermoelectric devices, which will greatly stimulate research-related experiments.
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Affiliation(s)
- Shaobo Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, P. R. China.,College of Electronic and Information Engineering, Anshun University, Anshun 561000, P. R. China
| | - Xiangrong Chen
- College of Physics, Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, P. R. China
| | - Zhaoyi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, P. R. China.
| | - Huayun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, P. R. China
| | - Huabing Yin
- Institute for Computational Materials Science, School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, P. R. China.
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32
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Xiao WZ, Xiao G, Wang ZJ, Wang LL. Large exciton binding energy, superior mechanical flexibility, and ultra-low lattice thermal conductivity in BiI 3monolayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:055302. [PMID: 34706358 DOI: 10.1088/1361-648x/ac33de] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Accepted: 10/27/2021] [Indexed: 06/13/2023]
Abstract
The exciton binding energy, mechanical properties, and lattice thermal conductivity of monolayer BiI3are investigated on the basis of first principle calculation. The excitation energy of monolayer BiI3is predicted to be 1.02 eV, which is larger than that of bulk BiI3(0.224 eV). This condition is due to the reduced dielectric screening in systems. The monolayer can withstand biaxial tensile strain up to 30% with ideal tensile strength of 2.60 GPa. Compared with graphene and MoS2, BiI3possesses superior flexibility and ductility due to its large Poisson's ratio and smaller Young's modulus by two orders of magnitude. The predicted lattice thermal conductivitykLof monolayer BiI3is 0.247 W m-1 K-1at room temperature, which is lower than most reported values for other 2D materials. Such ultralowkLresults from the scattering between acoustic and optical phonon modes, heavy atomic mass, and relatively weak chemical bond.
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Affiliation(s)
- Wen-Zhi Xiao
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, People's Republic of China
| | - Gang Xiao
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, People's Republic of China
| | - Zhu-Jun Wang
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, People's Republic of China
| | - Ling-Ling Wang
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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33
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Liu H, You CY, Li J, Galligan PR, You J, Liu Z, Cai Y, Luo Z. Synthesis of hexagonal boron nitrides by chemical vapor deposition and their use as single photon emitters. NANO MATERIALS SCIENCE 2021. [DOI: 10.1016/j.nanoms.2021.03.002] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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34
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Chen S, Tao WL, Zhou Y, Zeng ZY, Chen XR, Geng HY. Novel thermoelectric performance of 2D 1T- Se 2Te and SeTe 2with ultralow lattice thermal conductivity but high carrier mobility. NANOTECHNOLOGY 2021; 32:455401. [PMID: 34348253 DOI: 10.1088/1361-6528/ac1a91] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2021] [Accepted: 08/02/2021] [Indexed: 06/13/2023]
Abstract
The design and search for efficient thermoelectric materials that can directly convert waste heat into electricity have been of great interest in recent years since they have practical applications in overcoming the challenges of global warming and the energy crisis. In this work, two new two-dimensional 1T-phase group-VI binary compounds Se2Te and SeTe2with outstanding thermoelectric performances are predicted using first-principles calculations combined with Boltzmann transport theory. The dynamic stability is confirmed based on phonon dispersion. It is found that the spin-orbit coupling effect has a significant impact on the band structure of SeTe2, and induces a transformation from indirect to direct band gap. The electronic and phononic transport properties of the Se2Te and SeTe2monolayer are calculated and discussed. High carrier mobility (up to 3744.321 and 2295.413 cm2V-1S-1for electron and hole, respectively) is exhibited, suggesting great applications in nanoelectronic devices. Furthermore, the maximum thermoelectric figure of meritzTof SeTe2for n-type and p-type is 2.88, 1.99 and 5.94, 3.60 at 300 K and 600 K, respectively, which is larger than that of most reported 2D thermoelectric materials. The surprising thermoelectric properties arise from the ultralow lattice thermal conductivitykl(0.25 and 1.89 W m-1K-1for SeTe2and Se2Te at 300 K), and the origin of ultralow lattice thermal conductivity is revealed. The present results suggest that 1T-phase Se2Te and SeTe2monolayer are promising candidates for thermoelectric applications.
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Affiliation(s)
- ShaoBo Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, People's Republic of China
| | - Wang-Li Tao
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Yu Zhou
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Zhao-Yi Zeng
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, People's Republic of China
| | - Xiang-Rong Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China
| | - Hua-Yun Geng
- National Key Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, People's Republic of China
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35
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Wang Y, Ren J. Strain-Driven Switchable Thermal Conductivity in Ferroelastic PdSe 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:34724-34731. [PMID: 34266241 DOI: 10.1021/acsami.1c07830] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Materials with either high or low lattice thermal conductivity are remarkable for thermal management with applying in high-power electronic, optoelectronic, and thermoelectric devices. The realization of thermal switch between high and low thermal conductivities can greatly promote the ability of thermal energy control. Here, based on first-principles calculations, we propose that ferroelastic PdSe2 can achieve continuous switchable thermal conductivity through strain-driven structural phase transition. Thermal switch we explored mainly stems from soft mechanical properties and strong anharmonicity of the structure after ferroelastic phase transition. We demonstrate that the maximum ratio of thermal switch can reach an order of magnitude, indicating PdSe2 as a promising candidate in thermal devices.
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Affiliation(s)
- Yi Wang
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai 200092, China
| | - Jie Ren
- Center for Phononics and Thermal Energy Science, China-EU Joint Lab on Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai 200092, China
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36
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Sachdeva PK, Gupta S, Bera C. Large piezoelectric and thermal expansion coefficients with negative Poisson's ratio in strain-modulated tellurene. NANOSCALE ADVANCES 2021; 3:3279-3287. [PMID: 36133659 PMCID: PMC9418014 DOI: 10.1039/d0na00930j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2020] [Accepted: 04/06/2021] [Indexed: 05/17/2023]
Abstract
Two dimensional (2D) chalcogenide monolayers have diversified applications in optoelectronics, piezotronics, sensors and energy harvesting. The group-IV tellurene monolayer is one such emerging material in the 2D family owing to its piezoelectric, thermoelectric and optoelectronic properties. In this paper, the mechanical and piezoelectric properties of 2D tellurene in centrosymmetric β and non-centrosymmetric β' phases are investigated using density functional theory. β'-Te has shown a negative Poisson's ratio of -0.024 along the zigzag direction. Giant in-plane piezoelectric coefficients of -83.89 × 10-10 C m-1 and -42.58 × 10-10 C m-1 are observed for β'-Te under biaxial and uniaxial strains, respectively. The predicted values are remarkably higher, that is 23 and 12 times the piezoelectric coefficient of a MoS2 monolayer with biaxial and uniaxial strain in the zigzag direction, respectively. A large thermal expansion coefficient of tellurene is also estimated using quasi harmonic approximation. High piezoelectricity combined with exotic mechanical and thermal properties makes tellurene a very promising candidate in nanoelectronics.
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Affiliation(s)
- Parrydeep Kaur Sachdeva
- Institute of Nano Science and Technology Knowledge City, Sector-81, S. A. S Nagar Mohali Punjab 140306 India
- University Institute of Engineering and Technology, Panjab University Sector-25 Chandigarh 160014 India
- Department of Physics, Panjab University Sector-14 Chandigarh 160014 India
| | - Shuchi Gupta
- University Institute of Engineering and Technology, Panjab University Sector-25 Chandigarh 160014 India
| | - Chandan Bera
- Institute of Nano Science and Technology Knowledge City, Sector-81, S. A. S Nagar Mohali Punjab 140306 India
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37
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Tong Z, Dumitrică T, Frauenheim T. Ultralow Thermal Conductivity in Two-Dimensional MoO 3. NANO LETTERS 2021; 21:4351-4356. [PMID: 33979160 DOI: 10.1021/acs.nanolett.1c00935] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Monolayer molybdenum trioxide (MoO3) is an emerging two-dimensional (2D) material with high electrical conductivity but unexplored thermal conductivity. Using first-principles calculations and a Boltzmann transport theoretical framework, we predict a record low room-temperature phonon thermal conductivity (κp) of 1.57 and 1.26 W/mK along the principal in-plane directions of the MoO3 monolayer. The behavior is attributed to the combination of soft flexural and in-plane acoustic modes, which are coupled through the finite layer thickness, and to the strong bonding anharmonicity, which gives rise to significant 3- and 4-phonon scattering. These insights suggest new indicators for guiding the search of 2D materials with low κp and motivates κp measurements in MoO3 and its applications as a thermoelectric and thermally protective material.
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Affiliation(s)
- Zhen Tong
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
| | - Traian Dumitrică
- Department of Mechanical Engineering, University of Minnesota, Minnesota 55455, United States
| | - Thomas Frauenheim
- Shenzhen JL Computational Science and Applied Research Institute, Shenzhen 518131, China
- Beijing Computational Science Research Center, Beijing 100193, China
- Bremen Center for Computational Materials Science, University of Bremen, Bremen 2835, Germany
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38
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Li C, Zhang L, Gong T, Cheng Y, Li L, Li L, Jia S, Qi Y, Wang J, Gao Y. Study of the Growth Mechanism of Solution-Synthesized Symmetric Tellurium Nanoflakes at Atomic Resolution. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005801. [PMID: 33470501 DOI: 10.1002/smll.202005801] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2020] [Revised: 12/20/2020] [Indexed: 06/12/2023]
Abstract
As a new member of 2D materials, 2D tellurium (Te) has recently attracted much attention due to its intriguing properties. Through hydrothermal processing, 2D Te with tunable thickness and size has been realized, and its growth mechanism has also been studied. However, the tailored growth of 2D Te nanoflakes with symmetrical morphologies and interfacial moiré fringes has never been reported. Here, 2D Te nanoflakes have been prepared using the hydrothermal method, and mirror-symmetrical shapes (including "V-shape," "heart-shape," and "paper airplane-shape") with obvious moiré fringes in the middle of the nanoflakes are observed. Comprehensive transmission electron microscopy (TEM) techniques are utilized for structural characterization of these nanoflakes, especially the moiré fringes in the symmetry axis region of the nanoflakes. The systematic analyses of the moiré fringes and the observation of obvious overlapping edges of the composing nanoflakes from the cross-sectional samples reveal the possible mechanism of morphological evolution for these symmetrical nanoflakes. These details may fill the research gap in the controllable growth of 2D Te nanomaterials, pave the way for the fabrication of 2D Te moiré superlattices and in-plane homojunctions, and promote their future versatile applications.
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Affiliation(s)
- Chen Li
- Center for Nanoscale Characterization & Devices, Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, China
| | - Lei Zhang
- Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, School of Materials Science and Engineering, Hubei University, Wuhan, Hubei, 430062, China
| | - Tian Gong
- Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, School of Materials Science and Engineering, Hubei University, Wuhan, Hubei, 430062, China
| | - Yongfa Cheng
- Center for Nanoscale Characterization & Devices, Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, China
| | - Luying Li
- Center for Nanoscale Characterization & Devices, Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, China
| | - Li Li
- Center for Nanoscale Characterization & Devices, Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, China
| | - Shuangfeng Jia
- Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-Structures and the Institute for Advanced Studies, School of Physics and Technology, Wuhan University, Wuhan, Hubei, 430072, China
| | - Yajun Qi
- Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, School of Materials Science and Engineering, Hubei University, Wuhan, Hubei, 430062, China
| | - Jianbo Wang
- Center for Electron Microscopy, MOE Key Laboratory of Artificial Micro- and Nano-Structures and the Institute for Advanced Studies, School of Physics and Technology, Wuhan University, Wuhan, Hubei, 430072, China
| | - Yihua Gao
- Center for Nanoscale Characterization & Devices, Wuhan National Laboratory for Optoelectronics and School of Physics, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, China
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Wu CY, Li XL, Han JC, Gong HR, Zhou SF. Phonon spectrum and thermoelectric properties of square/octagon structure of bismuth monolayer. RSC Adv 2021; 11:5107-5117. [PMID: 35733442 PMCID: PMC9133997 DOI: 10.1039/d0ra08838b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2020] [Accepted: 12/15/2020] [Indexed: 11/21/2022] Open
Abstract
First-principles calculation and Boltzmann transport theory have been combined to comparatively investigate the band structure, phonon spectrum, lattice thermal conductivity, electronic transport property, Seebeck coefficient, and figure of merit of square/octagon (s/o)-bismuth monolayer. Calculations reveal that the thermoelectric properties of s/o-bismuth monolayer are better than that of β-bismuth monolayer, which should be mainly due to the low lattice thermal conductivity and weakened coupling of electrons and phonons. It is also found that the phonon frequency and group velocity could play dominant roles in determining the magnitude of the lattice thermal conductivity of s/o-bismuth monolayer. Furthermore, the Seebeck coefficient and figure of merit of s/o-bismuth monolayer are higher than those of β-bismuth monolayer. The derived results are in good agreement with other theoretical results in the literature, and could provide a deep understanding of thermoelectric properties of the bismuth monolayer materials. First-principles calculation and Boltzmann transport theory have been combined to comparatively investigate the electronic structure, phonon spectrum, and thermoelectric properties of square/octagon (s/o)-bismuth monolayer.![]()
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Affiliation(s)
- C. Y. Wu
- Department of Educational Science, Hunan First Normal University, Changsha, Hunan 410205, China
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083, China
| | - X. L. Li
- Department of Educational Science, Hunan First Normal University, Changsha, Hunan 410205, China
| | - J. C. Han
- Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15213, USA
| | - H. R. Gong
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083, China
| | - S. F. Zhou
- Institute of Advanced Wear & Corrosion Resistant and Functional Materials, Jinan University, Guangzhou 510632, China
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40
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Chen Y, Shen Y, Li X, Sun J, Wang Q. β‐CsCu
5
Se
3
: A Promising Thermoelectric Material going beyond Photovoltaic Application. ADVANCED THEORY AND SIMULATIONS 2020. [DOI: 10.1002/adts.202000169] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Yanyan Chen
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL‐MEMD, College of Engineering Peking University Beijing 100871 China
| | - Yupeng Shen
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL‐MEMD, College of Engineering Peking University Beijing 100871 China
| | - Xiaoyin Li
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL‐MEMD, College of Engineering Peking University Beijing 100871 China
| | - Jie Sun
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL‐MEMD, College of Engineering Peking University Beijing 100871 China
| | - Qian Wang
- Center for Applied Physics and Technology, Department of Materials Science and Engineering, HEDPS, BKL‐MEMD, College of Engineering Peking University Beijing 100871 China
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41
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Ma J, Meng F, He J, Jia Y, Li W. Strain-Induced Ultrahigh Electron Mobility and Thermoelectric Figure of Merit in Monolayer α-Te. ACS APPLIED MATERIALS & INTERFACES 2020; 12:43901-43910. [PMID: 32870654 DOI: 10.1021/acsami.0c10236] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In line with the classic phonon-glass electron-crystal (PGEC) paradigm, semiconducting and semimetallic multinary compounds remain the cornerstone of the state-of-the-art thermoelectric materials. By contrast, elemental PGEC is very rare. In this work, we report a thermoelectric study of monolayer α-Te by first-principles calculations and solving the parameter-free Boltzmann transport equation. It is found that monolayer α-Te possesses high electron mobility (about 2500 cm2 V-1 s-1) at room temperature due to small effective mass, low phonon frequencies, and thus a restricted phase space for electron-phonon scattering. In monolayer α-Te, the electrons near the conduction band edge are mainly scattered by the heavily populated quadratically dispersing out-of-plane acoustic (ZA) phonon modes. The thermoelectric figure of merit (ZT) for n-type monolayer α-Te is 0.55 at 300 K and 1.46 at 700 K. Notably, tensile strain stiffens the ZA modes, yielding a linear energy-momentum dispersion relation and the removal of the diverging thermal population of ZA phonons. Consequently, the electron mobility is enhanced. At a 4% tensile strain, the electron mobility can reach up to 8000 cm2 V-1 s-1 at room temperature while the thermal conductivity is almost unaffected, yielding a state-of-the-art ZT value of 0.94 and 2.03 in n-type monolayer α-Te at 300 and 700 K, respectively. For completeness, the thermoelectric study of p-type monolayer α-Te is also conducted. These results beckon further experiments toward high-performance α-Te-based thermoelectric materials via doping, alloying, and compositing.
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Affiliation(s)
- Jinlong Ma
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Fanchen Meng
- Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
| | - Jian He
- Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
| | - Yu Jia
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Wu Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, China
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42
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Liu G, Wang H, Gao Z, Li GL. Comparative investigation of the thermal transport properties of Janus SnSSe and SnS 2 monolayers. Phys Chem Chem Phys 2020; 22:16796-16803. [PMID: 32662487 DOI: 10.1039/d0cp01939a] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
Recently, Janus two-dimensional (2D) materials as a new member of 2D derivatives have been receiving much attention due to their novel properties. In this work, the lattice thermal conductivity κL of the Janus SnSSe monolayer is investigated based on first-principles calculations, while that of the SnS2 monolayer is studied for comparison. It is found the the κL values of SnSSe and SnS2 are 13.3 and 11.0 W m-1 K-1 at room temperature, and acoustic branches dominate their thermal transport. Weaker phonon anharmonicity in SnSSe leads to a slightly higher κL, though it has weaker phonon harmonicity. The smaller Grüneisen parameters of TA and LA phonons lower than 1 THz in SnSSe indicate weaker phonon anharmonicity, resulting in a higher κL. Finally, the size effect and boundary effect are also investigated, exhibiting that the κL can further decrease at the nanoscale. Our work suggests that Janus SnSSe and SnS2 have a much lower κL compared with conventional transition metal dichalcogenides (TMDs) and are potential competitors in the thermoelectric field.
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Affiliation(s)
- Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China.
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43
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Intercalation-assisted Exfoliation Strategy for Two-dimensional Materials Preparation. Chem Res Chin Univ 2020. [DOI: 10.1007/s40242-020-0159-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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44
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Shi Z, Cao R, Khan K, Tareen AK, Liu X, Liang W, Zhang Y, Ma C, Guo Z, Luo X, Zhang H. Two-Dimensional Tellurium: Progress, Challenges, and Prospects. NANO-MICRO LETTERS 2020; 12:99. [PMID: 34138088 PMCID: PMC7770852 DOI: 10.1007/s40820-020-00427-z] [Citation(s) in RCA: 61] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2020] [Accepted: 03/11/2020] [Indexed: 05/23/2023]
Abstract
Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.
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Affiliation(s)
- Zhe Shi
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Rui Cao
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Karim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
- School of Electrical Engineering and Intelligentization, Dongguan University of Technology, Dongguan, 523808, Guangdong, People's Republic of China
| | - Ayesha Khan Tareen
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Xiaosong Liu
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Weiyuan Liang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Ye Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Chunyang Ma
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China
| | - Zhinan Guo
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China.
| | - Xiaoling Luo
- Department of Ophthalmology, Shenzhen People's Hospital, Second Clinical Medical College of Jinan University, First Affiliated Hospital of Southern University of Science and Technology, Shenzhen, 518020, Guangdong, People's Republic of China.
| | - Han Zhang
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, Guangdong, People's Republic of China.
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Chen X, Wang D, Liu X, Li L, Sanyal B. Two-Dimensional Square-A 2B (A = Cu, Ag, Au, and B = S, Se): Auxetic Semiconductors with High Carrier Mobilities and Unusually Low Lattice Thermal Conductivities. J Phys Chem Lett 2020; 11:2925-2933. [PMID: 32223172 DOI: 10.1021/acs.jpclett.0c00613] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Using evolutionary structure search combined with ab initio theory, we investigate the electronic, thermal, and mechanical properties of two-dimensional (2D) A2B (A = Cu, Ag, Au, and B = S, Se) auxetic semiconductors. Two types of structures are found to have low energy, namely, s(I/II)-A2B, which have direct bandgaps in the range 1.09-2.60 eV and high electron mobilities. Among these semiconductors, Cu2B and Ag2B have light holes with 2 orders of magnitude larger mobility than the heavy holes, up to 9.51 × 104 cm2 V-1 s-1, giving the possibility of achieving highly anisotropic hole transport with the application of a uniaxial strain. Due to the ionic bonding nature, s-A2B structures have unusually low lattice thermal conductivities down to 1.5 W m-1 K-1 at 300 K, which are quite promising for new generation thermoelectric devices. Besides, s-A2B structures show extraordinary flexibility with ultralow Young's moduli (down to 20 N/m), which are lower than most previously reported 2D materials. Moreover, under strain along the diagonal direction, five of the structures have in-plane negative Poisson's ratios.
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Affiliation(s)
- Xin Chen
- Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Duo Wang
- Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Xiaobiao Liu
- School of Sciences, Henan Agricultural University, Zhengzhou 450002, People's Republic of China
| | - Linyang Li
- School of Science, Hebei University of Technology, Tianjin 300401, People's Republic of China
| | - Biplab Sanyal
- Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
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46
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Cai X, Jia X, Liu Y, Zhang L, Yu W, Wang B, Yang X, Wang Q, Jia Y. Enhanced carrier mobility and tunable electronic properties in α-tellurene monolayer via an α-tellurene and h-BN heterostructure. Phys Chem Chem Phys 2020; 22:6434-6440. [PMID: 32149300 DOI: 10.1039/d0cp00269k] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Using first-principles calculations within density functional theory, we explore the electronic properties of the α-tellurene/h-BN (Te/BN) heterostructure. We find that the type-I van der Waals (vdW) Te/BN bilayer exhibits an indirect semiconductor property with a bandgap of 0.59 eV, in which both the valence band maximum and conduction band minimum originate from the tellurene monolayer. The very weak interaction between α-tellurene and h-BN monolayers is demonstrated by the small charge transfer between the interlayer. More strikingly, we find that the carrier mobilities in the Te/BN bilayer can reach up to 104 cm2 s-1 V-1, one order of magnitude larger than those in tellurene. The underlying physics is that the Te/BN bilayer dramatically increases the in-plane stiffness as well as reducing the deformation potential compared with the tellurene monolayer. Additionally, we also show that the electronic properties of the Te/BN bilayer can easily be tuned by introducing defects or dopants in the BN monolayer. For instance, the B vacancy makes the Te/BN bilayer undergo the transition from semiconductor to half-metal. Our findings will broaden the potential application of tellurene and provide theoretical guidance for the relative experimental studies on 2D heterobilayers.
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Affiliation(s)
- Xiaolin Cai
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China. and Key Laboratory for Special Functional Materials of Ministry of Education, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Xingtao Jia
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Yujin Liu
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Liwei Zhang
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China. and School of Science and Engineering of Mathematics and Physics, Anhui University of Technology, Maanshan, Anhui 243002, China
| | - Weiyang Yu
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Baoji Wang
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Xuefeng Yang
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Qin Wang
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China.
| | - Yu Jia
- Key Laboratory for Special Functional Materials of Ministry of Education, School of Physics and Electronics, Henan University, Kaifeng 475004, China and International Laboratory for Quantum Functional Materials of Henan and School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China.
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47
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Wang Y, Ren J. Computational discovery of two-dimensional HfO 2 zoo based on evolutionary structure search. Phys Chem Chem Phys 2020; 22:4481-4489. [PMID: 32064477 DOI: 10.1039/c9cp05280a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
Hafnium oxides have been widely applied in modern electronic and photonic devices as a thin film layer due to their wide electronic band gap and high dielectric constant. Here, based on a high-throughput evolutionary structure search, we explore a two-dimensional HfO2 zoo and identify six thermodynamic stable phases of the atomic thin monolayer. We confirm their mechanical and dynamical stabilities by calculating the elastic tensors and phonon dispersions as well as by carrying out ab initio molecular dynamic simulations at finite temperatures. In particular, we investigate the electronic and optical properties of those stable two-dimensional HfO2 structures. In spite of their diverse different structures, the two-dimensional HfO2 phases all have wide electronic band gaps and high dielectric constants, all indicating large capacitances due to the small thickness of the monolayer structures. Our findings demonstrate that atomic thin two-dimensional HfO2 could be a potential supercapacitor and dielectric layer for advanced nanoscale optoelectronic devices.
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Affiliation(s)
- Yi Wang
- Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Sciences and Engineering, Tongji University, Shanghai 200092, China.
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Xian JJ, Wang C, Zhang ZM, Qin L, Ji W, Chen FC, Luo X, Sun YP, Zhang WH, Fu YS. Heterostructures of tellurium on NbSe 2 from sub-monolayer to few-layer films. NANOSCALE 2020; 12:1994-2001. [PMID: 31912077 DOI: 10.1039/c9nr09445h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
As a single-elemental system, tellurium can exist stably in the form of layers with an intriguing multivalence character, which constructs a new member of the 2D family. However, the growth and electronic structure of tellurium films are still far from known at present. Here, combined with molecular beam epitaxy, scanning tunneling microscopy/spectroscopy measurements and density functional theory calculations, we report the geometric and electronic structures of tellurium grown on NbSe2 from sub-monolayer to few-layer films. At the sub-monolayer coverage, we obtain two types of adatom-induced ordered superstructures that are strongly coupled with NbSe2. With the increase in coverage, the few-layer tellurium films adopt the α-phase form, showing internal strain-induced ripple patterns in the few-layers and bulk-like in thick layers with distinct edge geometries. The band gap of α-tellurium films decreases with the increase in thickness, which is associated with notable in-gap states. These observations, corroborated with DFT calculations, emphasize the important role of the NbSe2 substrate in modulating the structural and electronic properties of tellurium films. Moreover, the interaction between tellurium adatoms and tellurium films leads to √2 × √2 surface reconstruction prior to a new monolayer, conforming to our theoretical calculations. Our work clarifies the kinetic growth of tellurium films on NbSe2 and reveals the tunability of electronic properties via substrate modulation or surface decoration.
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Affiliation(s)
- Jing-Jing Xian
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China.
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Cai X, Ren Y, Wu M, Xu D, Luo X. Strain-induced phase transition and giant piezoelectricity in monolayer tellurene. NANOSCALE 2020; 12:167-172. [PMID: 31799579 DOI: 10.1039/c9nr06507e] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
We report the transition of a strain-induced centrosymmetric β-phase to a non-centrosymmetric α-phase for monolayer tellurene based on density functional theory calculations. The phase transition is represented by the displacement of the middle-layer Te atoms from the center of the unit cell in the y-direction. The critical point for the phase transition is found to be at 0.5% biaxial tensile strain. By analyzing the bond variation and the phonon spectra, we attribute the phase transition to the decrease of the bonding strength at the tensile strain and the atom migration corresponding to the phonon vibration mode along the distorted direction. The transition to the α-phase under strain is further confirmed from the calculated electronic band structure where the spin-orbit coupling (SOC) induces a large Rashba splitting due to symmetry breaking, which may enable the control of spin via the electric field. Two-dimensional ferroelectrics can be formed upon transition of the strain-induced β-phase to the α-phase, and a high polarization of about 90 μC cm-2 can be achieved via a tensile strain, giving rise to a giant piezoelectric coefficient that is two orders of magnitude higher than that of the MoS2 monolayer.
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Affiliation(s)
- Xueru Cai
- State Key Laboratory of Coal Combustion, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
| | - Yangyang Ren
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Dongwei Xu
- State Key Laboratory of Coal Combustion, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
| | - Xiaobing Luo
- State Key Laboratory of Coal Combustion, School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
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Li M, Gao Z, Han Y, Zhao Y, Yuan K, Nagase S, Ehara M, Zhao X. Potential molecular semiconductor devices: cyclo-Cn (n = 10 and 14) with higher stabilities and aromaticities than acknowledged cyclo-C18. Phys Chem Chem Phys 2020; 22:4823-4831. [DOI: 10.1039/d0cp00167h] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Theoretical calculations reveal that the zero-dimensional allotropes of carbon atoms, cyclo-Cn (n = 10 and 14), have higher thermodynamic, kinetic, optical, and dynamic stabilities and aromaticity than the acknowledged cyclo-C18.
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Affiliation(s)
- Mengyang Li
- Institute for Chemical Physics & Department of Chemistry
- School of Science
- State Key Laboratory of Electrical Insulation and Power Equipment & MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
- Xi'an Jiaotong University
- Xi'an 710049
| | - Zhibin Gao
- Department of Physics
- National University of Singapore
- Singapore 117551
- Republic of Singapore
| | - Yanbo Han
- Institute for Chemical Physics & Department of Chemistry
- School of Science
- State Key Laboratory of Electrical Insulation and Power Equipment & MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
- Xi'an Jiaotong University
- Xi'an 710049
| | - Yaoxiao Zhao
- Institute for Chemical Physics & Department of Chemistry
- School of Science
- State Key Laboratory of Electrical Insulation and Power Equipment & MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
- Xi'an Jiaotong University
- Xi'an 710049
| | - Kun Yuan
- College of Chemical Engineering and Technology
- Tianshui Normal University
- Tianshui
- China
| | - Shigeru Nagase
- Fukui Institute for Fundamental Chemistry
- Kyoto University
- Kyoto 606-8103
- Japan
| | | | - Xiang Zhao
- Institute for Chemical Physics & Department of Chemistry
- School of Science
- State Key Laboratory of Electrical Insulation and Power Equipment & MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
- Xi'an Jiaotong University
- Xi'an 710049
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