1
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Liu J, Zhang X, Ji Y, Gao X, Wu J, Zhang M, Li L, Liu X, Yan W, Yao T, Yin Y, Wang L, Guo H, Cheng G, Wang Z, Gao P, Wang Y, Chen K, Liao Z. Controllable Itinerant Ferromagnetism in Weakly Correlated 5d SrIrO 3. J Phys Chem Lett 2022; 13:11946-11954. [PMID: 36534070 DOI: 10.1021/acs.jpclett.2c03313] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The weakly correlated nature of 5d oxide SrIrO3 determines its rare ferromagnetism, and the control of its magnetic order is even less studied. Tailoring structure distortion is currently a main route to tune the magnetic order of 5d iridates, but only for the spatially confined insulating counterparts. Here, we have realized ferromagnetic order in metallic SrIrO3 by construction of SrIrO3/ferromagnetic-insulator (LaCoO3) superlattices, which reveal a giant coercivity of ∼10 T and saturation field of ∼25 T with strong perpendicular magnetic anisotropy. The Curie temperature of SrIrO3 can be controlled by engineering interface charge transfer, which is confirmed by Hall effect measurements collaborating with EELS and XAS. Besides, the noncoplanar spin texture is captured, which is caused by interfacial Dzyaloshinskii-Moriya interactions as well. These results indicate controllable itinerant ferromagnetism and an emergent topological magnetic state in strong spin-orbit coupled semimetal SrIrO3, showing great potential to develop efficient spintronic devices.
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Affiliation(s)
- Junhua Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xinxin Zhang
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yaoyao Ji
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xiaofei Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Jiating Wu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Minjie Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Lin Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Xiaokang Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Tao Yao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Yuewei Yin
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei230026, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
| | - Hangwen Guo
- State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai200433, China
| | - Guanglei Cheng
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei230026, China
| | - Zhaosheng Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei230031, China
| | - Peng Gao
- International Center for Quantum Materials and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing100871, China
| | - Yilin Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei230026, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei230026, China
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2
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Zhang G, Wu H, Zhang L, Yang L, Xie Y, Guo F, Li H, Tao B, Wang G, Zhang W, Chang H. Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204380. [PMID: 36135779 DOI: 10.1002/smll.202204380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.
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Affiliation(s)
- Gaojie Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liang Zhang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Li Yang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuanmiao Xie
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Fei Guo
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Hongda Li
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Boran Tao
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Guofu Wang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Wenfeng Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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3
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Proximity-Induced Magnetism in a Topological Insulator/Half-Metallic Ferromagnetic Thin Film Heterostructure. COATINGS 2022. [DOI: 10.3390/coatings12060750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2022]
Abstract
Topological insulator (TI) Bi2Se3 thin films were prepared on half-metallic ferromagnetic La0.7Sr0.3MnO3 thin film by magnetron sputtering, forming a TI/FM heterostructure. The conductivity of Bi2Se3was modified by La0.7Sr0.3MnO3 at high- and low-temperature regions via different mechanisms, which could be explained by the short-range interactions and long-range interaction between ferromagnetic insulator and Bi2Se3 due to the proximity effect. Magnetic and transport measurements prove that the ferromagnetic phase and extra magnetic moment are induced in Bi2Se3 films. The weak anti-localized (WAL) effect was suppressed in Bi2Se3 films, accounting for the magnetism of La0.7Sr0.3MnO3 layers. This work clarifies the special behavior in Bi2Se3/La0.7Sr0.3MnO3 heterojunctions, which provides an effective way to study the magnetic proximity effect of the ferromagnetic phase in topological insulators.
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4
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Wang D, Hu CE, Liu LG, Zhang M, Chen XR. An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi2Se3. MATERIALS 2022; 15:ma15113864. [PMID: 35683164 PMCID: PMC9181840 DOI: 10.3390/ma15113864] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/19/2022] [Revised: 05/24/2022] [Accepted: 05/25/2022] [Indexed: 11/16/2022]
Abstract
In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi2Se3. The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of Bi2Se3 were studied by the first principles. It is shown that the impurity bands formed inside the bulk inverted energy gap near the Fermi level with C doping Bi2Se3. Due to spin-polarized ferromagnetic coupling, the time inversion symmetry of Bi2Se3 is destroyed. Remarkably, C is the most effective dopant because of the magnetic moment produced by doping at all positions. The experiment confirmed that the remnant ferromagnetism Mr is related to the C concentration. Theoretical calculations and experiments confirmed that carbon-doped Bi2Se3 is ferromagnetic, which provides a plan for manipulating topological properties and exploring spintronic applications.
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Affiliation(s)
- Dan Wang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
| | - Cui-E Hu
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China;
| | - Li-Gang Liu
- School of Physics and Astronomy, China West Normal University, Nanchong 637002, China;
| | - Min Zhang
- School of Physics and Astronomy, China West Normal University, Nanchong 637002, China;
- Correspondence: (M.Z.); (X.-R.C.)
| | - Xiang-Rong Chen
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China;
- Correspondence: (M.Z.); (X.-R.C.)
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5
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Riddiford LJ, Grutter AJ, Pillsbury T, Stanley M, Reifsnyder Hickey D, Li P, Alem N, Samarth N, Suzuki Y. Understanding Signatures of Emergent Magnetism in Topological Insulator/Ferrite Bilayers. PHYSICAL REVIEW LETTERS 2022; 128:126802. [PMID: 35394317 DOI: 10.1103/physrevlett.128.126802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 01/21/2022] [Accepted: 02/23/2022] [Indexed: 06/14/2023]
Abstract
Magnetic insulator-topological insulator heterostructures have been studied in search of chiral edge states via proximity induced magnetism in the topological insulator, but these states have been elusive. We identified MgAl_{0.5}Fe_{1.5}O_{4}/Bi_{2}Se_{3} bilayers for a possible magnetic proximity effect. Electrical transport and polarized neutron reflectometry suggest a proximity effect, but structural data indicate a disordered interface as the origin of the magnetic response. Our results provide a strategy via correlation of microstructure with magnetic data to confirm a magnetic proximity effect.
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Affiliation(s)
- Lauren J Riddiford
- Department of Applied Physics, Stanford University, Stanford, California 94305, USA
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
| | - Alexander J Grutter
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
| | - Timothy Pillsbury
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Max Stanley
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Danielle Reifsnyder Hickey
- Department of Materials Science, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Peng Li
- Department of Electrical Engineering and Computer Science, Auburn University, Auburn University, Auburn, Alabama 36849, USA
| | - Nasim Alem
- Department of Materials Science, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Nitin Samarth
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Yuri Suzuki
- Department of Applied Physics, Stanford University, Stanford, California 94305, USA
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
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6
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Peng X, Liang H, Dong X, Yang H, Wang X, Qiao L, Li J, Wang C, Han J, Wang Q, Chen G, Xiao W. Epitaxial growth of Bi(110) and Bi 2Se 3thin films on a ferromagnetic insulator substrate of Cr 2Ge 2Te 6. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:415001. [PMID: 34271559 DOI: 10.1088/1361-648x/ac1535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2021] [Accepted: 07/16/2021] [Indexed: 06/13/2023]
Abstract
When a topological insulator (TI) is brought to the proximity of a ferromagnetic insulator (FMI), the breaking of the time-reversal symmetry may give rise to quantum anomalous Hall effect (QAHE). The physical properties of such TI-FMI systems are greatly affected by the interfacial structures of the components. Here, we report the growth and structural properties of Bi(110) and Bi2Se3thin films on a FMI of Cr2Ge2Te6(CGT) substrate by scanning tunneling microscopy. We observed various defects and impurities on the CGT surfaces, which serve as the preferential sites for initial nucleation and epitaxial growth of Bi(110) thin films. The exposure of the as-grown Bi(110) thin films to Se vapor leads to the formation of polycrystalline Bi2Se3thin films with randomly distributed holes. The structure and composition of the as-prepared Bi2Se3thin films were further confirmed by Raman spectroscopy and x-ray photoelectron spectroscopy. Our work shows that the quality of the CGT crystals is vital for the growth of high-quality TIs on CGT substrates for QAHE.
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Affiliation(s)
- Xianglin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Hui Liang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xu Dong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Huixia Yang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiangzhuo Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Lu Qiao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Ji Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Chang Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junfeng Han
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Qinsheng Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Genfu Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Wende Xiao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
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7
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Bhattacharyya S, Akhgar G, Gebert M, Karel J, Edmonds MT, Fuhrer MS. Recent Progress in Proximity Coupling of Magnetism to Topological Insulators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007795. [PMID: 34185344 DOI: 10.1002/adma.202007795] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Revised: 01/11/2021] [Indexed: 05/08/2023]
Abstract
Inducing long-range magnetic order in 3D topological insulators can gap the Dirac-like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.
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Affiliation(s)
- Semonti Bhattacharyya
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Golrokh Akhgar
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Matthew Gebert
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Julie Karel
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
| | - Mark T Edmonds
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Michael S Fuhrer
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
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8
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Ng SM, Wang H, Liu Y, Wong HF, Yau HM, Suen CH, Wu ZH, Leung CW, Dai JY. High-Temperature Anomalous Hall Effect in a Transition Metal Dichalcogenide Ferromagnetic Insulator Heterostructure. ACS NANO 2020; 14:7077-7084. [PMID: 32407078 DOI: 10.1021/acsnano.0c01815] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using a heterostructure approach by depositing it on a ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than 1 order of magnitude larger than those previously reported values in topological insulators or TMD-based heterostructures. A complicated interface with additional ZrO2 and amorphous YIG layers is actually observed between ZrTe2 and YIG. The magnetization of interfacial reaction-induced ZrO2 and YIG is believed to play a crucial role in the induced high-temperature AHE in the ZrTe2. These results present a promising system for the spintronic device applications, and it may shed light on the designing approach to introduce magnetism to TMDs at room temperature.
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Affiliation(s)
- Sheung Mei Ng
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Huichao Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
- School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Yukuai Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Hon Fai Wong
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Hei Man Yau
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Chun Hung Suen
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Ze Han Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Chi Wah Leung
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
| | - Ji-Yan Dai
- Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China
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9
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Singh A, Kumar S, Singh M, Singh P, Singh R, Gangwar VK, Lakhani A, Patil S, Schwier EF, Matsumura T, Shimada K, Ghosh AK, Chatterjee S. Anomalous Hall effect in Cu doped Bi 2Te 3 topological insulator. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:305602. [PMID: 32235039 DOI: 10.1088/1361-648x/ab8521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The angle resolved photo-emission spectroscopy (ARPES) study and magneto-transport properties of Bi2Cu x Te3-x have been investigated. ARPES study indicates the clear existence of surface states in the as-prepared samples. The estimated bandgap from ARPES is found to be ∼5 meV and 16 meV respectively for x = 0.03 and x = 0.15 samples. Presence of larger Cu concentration (x = 0.15) introduces magnetic ordering. Observed non-linearity in the Hall data is due to the existence of anomalous Hall effect which can be attributed to the 2D transport. The observed magneto-transport features might be related to the surface carriers which is confirmed by ARPES study.
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Affiliation(s)
- Abhishek Singh
- Department of Physics, Indian Institute of Technology, Banaras Hindu University, Varanasi 221-005, India
| | - Shiv Kumar
- Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
| | - Mahima Singh
- Department of Physics, Indian Institute of Technology, Banaras Hindu University, Varanasi 221-005, India
| | - Prajyoti Singh
- Department of Physics, Indian Institute of Technology, Banaras Hindu University, Varanasi 221-005, India
| | - Rahul Singh
- Department of Physics, Indian Institute of Technology, Banaras Hindu University, Varanasi 221-005, India
| | - Vinod K Gangwar
- Department of Physics, Indian Institute of Technology, Banaras Hindu University, Varanasi 221-005, India
| | - Archana Lakhani
- UGC-DAE Consortium for Scientific Research, Indore, Madhya Pradesh 452017, India
| | - Swapnil Patil
- Department of Physics, Indian Institute of Technology, Banaras Hindu University, Varanasi 221-005, India
| | - Eike F Schwier
- Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
| | - Takeshi Matsumura
- Department of Quantum Matter, AdSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
| | - K Shimada
- Hiroshima Synchrotron Radiation Center, Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
| | - A K Ghosh
- Department of Physics, Banaras Hindu University, Varanasi 221-005, India
| | - Sandip Chatterjee
- Department of Physics, Indian Institute of Technology, Banaras Hindu University, Varanasi 221-005, India
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10
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Jeong K, Park H, Chae J, Sim KI, Yang WJ, Kim JH, Hong SB, Kim JH, Cho MH. Topological Phase Control of Surface States in Bi 2Se 3 via Spin-Orbit Coupling Modulation through Interface Engineering between HfO 2-X. ACS APPLIED MATERIALS & INTERFACES 2020; 12:12215-12226. [PMID: 32073823 DOI: 10.1021/acsami.9b17555] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The direct control of topological surface states in topological insulators is an important prerequisite for the application of these materials. Conventional attempts to utilize magnetic doping, mechanical tuning, structural engineering, external bias, and external magnetic fields suffer from a lack of reversible switching and have limited tunability. We demonstrate the direct control of topological phases in a bismuth selenide (Bi2Se3) topological insulator in 3 nm molecular beam epitaxy-grown films through the hybridization of the topological surface states with the hafnium (Hf) d-orbitals in the topmost layer of an underlying oxygen-deficient hafnium oxide (HfO2) substrate. The higher angular momentum of the d-orbitals of Hf is hybridized strongly by topological insulators, thereby enhancing the spin-orbit coupling and perturbing the topological surface states asymmetry in Bi2Se3. As the oxygen defect is cured or generated reversibly by external electric fields, our research facilitates the complete electrical control of the topological phases of topological insulators by controlling the defect density in the adjacent transition metal oxide. In addition, this mechanism can be applied in other related topological materials such as Weyl and Dirac semimetals in future endeavors to facilitate practical applications in unit-element devices for quantum computing and quantum communication.
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Affiliation(s)
- Kwangsik Jeong
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Hanbum Park
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Jimin Chae
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Kyung-Ik Sim
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Won Jun Yang
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Jong-Hoon Kim
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Seok-Bo Hong
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Jae Hoon Kim
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
| | - Mann-Ho Cho
- Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Republic of Korea
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11
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Yao X, Gao B, Han MG, Jain D, Moon J, Kim JW, Zhu Y, Cheong SW, Oh S. Record High-Proximity-Induced Anomalous Hall Effect in (Bi xSb 1-x) 2Te 3 Thin Film Grown on CrGeTe 3 Substrate. NANO LETTERS 2019; 19:4567-4573. [PMID: 31185718 DOI: 10.1021/acs.nanolett.9b01495] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Quantum anomalous Hall effect (QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators (TIs) due to limitations inherent with the doping process. In an effort to boost the quantization temperature of QAHE, the magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (BixSb1-x)2Te3 (BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CrGeTe3 (CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical matches for magnetic insulator/TI proximity systems.
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Affiliation(s)
- Xiong Yao
- Center for Quantum Materials Synthesis and Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States
| | - Bin Gao
- Department of Physics and Astronomy , Rice University , Houston , Texas 77005 , United States
| | - Myung-Geun Han
- Condensed Matter Physics and Materials Science , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Deepti Jain
- Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States
| | - Jisoo Moon
- Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States
| | - Jae Wook Kim
- Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States
| | - Yimei Zhu
- Condensed Matter Physics and Materials Science , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Sang-Wook Cheong
- Center for Quantum Materials Synthesis and Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States
| | - Seongshik Oh
- Center for Quantum Materials Synthesis and Department of Physics and Astronomy , Rutgers, The State University of New Jersey , Piscataway , New Jersey 08854 , United States
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12
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Mogi M, Nakajima T, Ukleev V, Tsukazaki A, Yoshimi R, Kawamura M, Takahashi KS, Hanashima T, Kakurai K, Arima TH, Kawasaki M, Tokura Y. Large Anomalous Hall Effect in Topological Insulators with Proximitized Ferromagnetic Insulators. PHYSICAL REVIEW LETTERS 2019; 123:016804. [PMID: 31386415 DOI: 10.1103/physrevlett.123.016804] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2018] [Revised: 03/24/2019] [Indexed: 06/10/2023]
Abstract
We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of the ferromagnetic insulator Cr_{2}Ge_{2}Te_{6} and topological insulator (Bi,Sb)_{2}Te_{3}. Despite small magnetization in the (Bi,Sb)_{2}Te_{3} layer, the anomalous Hall conductivity reaches a large value of 0.2e^{2}/h in accord with a ferromagnetic response of the Cr_{2}Ge_{2}Te_{6}. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr_{2}Ge_{2}Te_{6} layer is effective and strong enough to open the sizable exchange gap in the surface state.
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Affiliation(s)
- Masataka Mogi
- Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Taro Nakajima
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Victor Ukleev
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Laboratory for Neutron Scattering and Imaging (LNS), Paul Scherrer Institute (PSI), CH-5232, Villigen, Switzerland
| | - Atsushi Tsukazaki
- Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, Japan
| | - Ryutaro Yoshimi
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Minoru Kawamura
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Kei S Takahashi
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- PRESTO, Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075, Japan
| | - Takayasu Hanashima
- PRESTO, Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075, Japan
| | - Kazuhisa Kakurai
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Comprehensive Research Organization for Science and Society (CROSS), Tokai, Ibaraki 319-1106, Japan
| | - Taka-Hisa Arima
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
| | - Masashi Kawasaki
- Department of Applied Physics and Quantum Phase Electronics Center (QPEC), University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Yoshinori Tokura
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Tokyo College, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
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