Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition

Nanoparticles synthesis in microwave plasmas: peculiarities and comprehensive insight

Low-pressure plasma processes are routinely used to grow, functionalize or etch materials, and thanks to some of its unique attributes, plasma has become a major player for some applications such as microelectronics. Plasma processes are however still at a research level when it comes to the synthesis and functionalization of nanoparticles. Yet plasma processes can offer a particularly suitable solution to produce nanoparticles having very peculiar features since they enable to: (i) reach particle with a variety of chemical compositions, (ii) tune the size and density of the particle cloud by acting on the transport dynamics of neutral or charged particles through a convenient setting of the thermal gradients or the electric field topology in the reactor chamber and (iii) manipulate nanoparticles and deposit them directly onto a substrate, or codeposit them along with a continuous film to produce nanocomposites or (iv) use them as a template to produce 1D materials. In this article, we present an experimental investigation of nanoparticles synthesis and dynamics in low-pressure microwave plasmas by combining time-resolved and in-situ laser extinction and scattering diagnostics, QCL absorption spectroscopy, mass spectrometry, optical emission spectroscopy and SEM along with a particle transport model. We showed for the first time the thermophoresis-driven dynamic of particle cloud in electrodless microwave plasmas. We showed that this effect is linked to particular fluctuations in the plasma composition and results in the formation of a void region in the bulk of the plasma surrounded by a particle cloud in the peripherical post-discharge. We also reveals and analyze the kinetics of precursor dissociation and molecular growth that result in the observed nanoparticle nucleation.

Acrylates Polymerization on Covalent Plasma-Assisted Functionalized Graphene: A Route to Synthesize Hybrid Functional Materials

The modification of the surface properties of graphene with polymers provides a method for expanding its scope into new applications as a hybrid material. Unfortunately, the chemical inertness of graphene hinders the covalent functionalization required to build them up. Developing new strategies to enhance the graphene chemical activity for efficient and stable functionalization, while preserving its electronic properties, is a major challenge. We here devise a covalent functionalization method that is clean, reproducible, scalable, and technologically relevant for the synthesis of a large-scale, substrate-supported graphene-polymer hybrid material. In a first step, hydrogen-assisted plasma activation of p-aminophenol (p-AP) linker molecules produces their stable and covalent attachment to large-area graphene. Second, an in situ radical polymerization reaction of 2-hydroxyethyl acrylate (HEA) is carried out on the functionalized surface, leading to a graphene-polymer hybrid functional material. The functionalization with a hydrophilic and soft polymer modifies the hydrophobicity of graphene and might enhance its biocompatibility. We have characterized these hybrid materials by atomic force microscopy (AFM), X-Ray photoelectron spectroscopy (XPS) and Raman spectroscopy and studied their electrical response, confirming that the graphene/p-AP/PHEA architecture is anchored covalently by the sp3 hybridization and controlled polymerization reaction on graphene, retaining its suitable electronic properties. Among all the possibilities, we assess the proof of concept of this graphene-based hybrid platform as a humidity sensor. An enhanced sensitivity is obtained in comparison with pristine graphene and related materials. This functional nanoarchitecture and the two-step strategy open up future potential applications in sensors, biomaterials, or biotechnology fields.

Graphene Synthesis Techniques and Environmental Applications

Graphene is fundamentally a two-dimensional material with extraordinary optical, thermal, mechanical, and electrical characteristics. It has a versatile surface chemistry and large surface area. It is a carbon nanomaterial, which comprises sp² hybridized carbon atoms placed in a hexagonal lattice with one-atom thickness, giving it a two-dimensional structure. A large number of synthesis techniques including epitaxial growth, liquid phase exfoliation, electrochemical exfoliation, mechanical exfoliation, and chemical vapor deposition are used for the synthesis of graphene. Graphene prepared using different techniques can have a number of benefits and deficiencies depending on its application. This study provides a summary of graphene preparation techniques and critically assesses the use of graphene, its derivates, and composites in environmental applications. These applications include the use of graphene as membrane material for the detoxication and purification of water, active material for gas sensing, heavy metal ions detection, and CO₂ conversion. Furthermore, a trend analysis of both synthesis techniques and environmental applications of graphene has been performed by extracting and analyzing Scopus data from the past ten years. Finally, conclusions and outlook are provided to address the residual challenges related to the synthesis of the material and its use for environmental applications.

APCVD Graphene-Based Composite Electrodes for Li-Ion Batteries

Lithium-ion batteries have numerous advantages, including excellent energy density with high stability. One of the limitations regards the preparation of anode materials at low cost and high safety with good performance. Over the past decade, research has been focused on their improvement as composites, taking advantage of the synergistic effects between the materials. The object of this mini review is to summarize the synthetic strategies of composite electrodes based on graphene that are utilized for lithium-ion chemistries. Emphasis will be given on chemical vapor deposition and how this route can overcome the electrode issues for large-scale deployment.

Bifunctional catalytic effect of Mo2C/oxide interface on multi-layer graphene growth

The role of the Mo₂C/oxide interface on multi-layer graphene (MLG) nucleation during a chemical vapor deposition (CVD) process is investigated. During the CVD process, MLG growth is only observed in the presence of a Mo₂C/SiO₂ interface, indicating that the chemical reactions occurring at this interface trigger the nucleation of MLG. The chemical reaction pathway is explained in four steps as (1) creation of H radicals, (2) reduction of the oxide surface, (3) formation of C–C bonds at O–H sites, and (4) expansion of graphitic domains on the Mo₂C catalyst. Different Mo₂C/oxide interfaces are investigated, with varying affinity for reduction in a hydrogen environment. The results demonstrate a catalyst/oxide bifunctionality on MLG nucleation, comprising of CH₄ dehydrogenation by Mo₂C and initial C–C bond formation at the oxide interface.

Single-Step Direct Growth of Graphene on Cu Ink toward Flexible Hybrid Electronic Applications by Plasma-Enhanced Chemical Vapor Deposition

Highly customized and free-formed products in flexible hybrid electronics (FHE) require direct pattern creation such as inkjet printing (IJP) to accelerate product development. In this work, we demonstrate the direct growth of graphene on Cu ink deposited on polyimide (PI) by means of plasma-enhanced chemical vapor deposition (PECVD), which provides simultaneous reduction, sintering, and passivation of the Cu ink and further reduces its resistivity. We investigate the PECVD growth conditions for optimizing the graphene quality on Cu ink and find that the defect characteristics of graphene are sensitive to the H₂/CH₄ ratio at higher total gas pressure during the growth. The morphology of Cu ink after the PECVD process and the dependence of the graphene quality on the H₂/CH₄ ratio may be attributed to the difference in the corresponding electron temperature. Therefore, this study paves a new pathway toward efficient growth of high-quality graphene on Cu ink for applications in flexible electronics and Internet of Things (IoT).

Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review

Graphene as the 2D material with extraordinary properties has attracted the interest of research communities to master the synthesis of this remarkable material at a large scale without sacrificing the quality. Although Top-Down and Bottom-Up approaches produce graphene of different quality, chemical vapour deposition (CVD) stands as the most promising technique. This review details the leading CVD methods for graphene growth, including hot-wall, cold-wall and plasma-enhanced CVD. The role of process conditions and growth substrates on the nucleation and growth of graphene film are thoroughly discussed. The essential characterisation techniques in the study of CVD-grown graphene are reported, highlighting the characteristics of a sample which can be extracted from those techniques. This review also offers a brief overview of the applications to which CVD-grown graphene is well-suited, drawing particular attention to its potential in the sectors of energy and electronic devices.

Room-temperature graphitization in a solid-phase reaction

Graphitized carbon including graphene has recently become one of the most investigated advanced materials for future device applications, but a prerequisite for broadening its range of applications is to lower its growth temperature. Here we report a great decrease in graphitization temperature using the well-known catalyst Ni. Amorphous carbon films with Ni nanoparticles (NPs) were deposited, using a simple one-step magnetron sputtering method, onto microgrids and a SiO₂/Si substrate for transmission electron microscopy (TEM) and Raman spectroscopy analyses, respectively. The amorphous carbon surroundings and locations between the Ni NPs started to become graphitized during the film deposition even at room temperature (RT) and 50 °C. The graphitization was confirmed by both high-resolution TEM (HR-TEM) and Raman 2D peak analyses. The increase in the relative amount of Ni in the amorphous carbon film led to the partial oxidation of the larger Ni NPs, resulting in less graphitization even at an elevated deposition temperature. Based on the detailed HR-TEM analyses, a decreased oxidation of NPs and enhanced solubility of carbon into Ni NPs were believed to be key for achieving low-temperature graphitization.

The spontaneous graphitization for C films containing Ni NPs was attributed mainly to the increased solubility for metallic Ni NPs, and was enhanced at the deposition temperature of 50 °C.

Wafer-Scale Synthesis of Graphene on Sapphire: Toward Fab-Compatible Graphene

The adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated. Low energy electron diffraction, low energy electron microscopy, and scanning tunneling microscopy measurements identify the Al-rich reconstruction 31 × 31 R ± 9 ° of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm² V^-1 s^-1 . The process is scaled up to 4 and 6 in. wafers sizes and metal contamination levels are retrieved to be within the limits for back-end-of-line integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.

Direct Synthesis of Large-Area Graphene on Insulating Substrates at Low Temperature using Microwave Plasma CVD

With a combination of outstanding properties and a wide spectrum of applications, graphene has emerged as a significant nanomaterial. However, to realize its full potential for practical applications, a number of obstacles have to be overcome, such as low-temperature, transfer-free growth on desired substrates. In most of the reports, direct graphene growth is confined to either a small area or high sheet resistance. Here, an attempt has been made to grow large-area graphene directly on insulating substrates, such as quartz and glass, using magnetron-generated microwave plasma chemical vapor deposition at a substrate temperature of 300 °C with a sheet resistance of 1.3k Ω/□ and transmittance of 80%. Graphene is characterized using Raman microscopy, atomic force microscopy, scanning electron microscopy, optical imaging, UV-vis spectroscopy, and X-ray photoelectron spectroscopy. Four-probe resistivity and Hall effect measurements were performed to investigate electronic properties. Key to this report is the use of 0.3 sccm CO₂ during growth to put a control over vertical graphene growth, generally forming carbon walls, and 15-20 min of O₃ treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance. This report can be helpful in growing large-area graphene directly on insulating transparent substrates at low temperatures with advanced electronic properties for applications in transparent conducting electrodes and optoelectronics.