Tunable WSe2-CdS mixed-dimensional van der Waals heterojunction with a piezo-phototronic effect for an enhanced flexible photodetector

High-Performance Ultraviolet to Near-Infrared Antiambipolar Photodetectors Based on 1D CdSxSe1-x/2D Te Heterojunction

Antiambipolar heterojunctions are regarded as a revolutionary technology in the fields of electronics and optoelectronics, enabling the switch between positive and negative transconductance within a single device, which is crucial for diverse logic circuit applications. This study pioneers a mixed-dimensional photodetector featuring antiambipolar properties, facilitated by the van der Waals integration of one-dimensional CdSxSe1-x nanowires and two-dimensional Te nanosheets. This antiambipolar device enables flexible control over carrier transport via gate voltage, thus paving new paths for future optoelectronic devices. Furthermore, by precisely managing the stoichiometry of the ternary alloy CdSxSe1-x nanowires, fine-tuning of the nanowire band structure is achieved. This allows for customizable heterojunction band alignment (Type I and Type II), enabling adjustable band alignment. Through sophisticated band engineering, optimal Type II band alignment is achieved at the CdSxSe1-x/Te interface, significantly enhancing the device's photoelectric conversion efficiency through the synergistic effect of different dimensional materials. Exhibiting outstanding photoresponse across a broad spectral range from ultraviolet to near-infrared, especially under 450 nm illumination, the CdSxSe1-x/Te heterojunction photodetector demonstrates superior performance, including an impressive responsivity of 284 A W-1, a high detectivity of 1.07 × 1017 Jones, an elevated external quantum efficiency of 7.83 × 104 %, and a swift response time of 11 μs. Ultimately, this customizable antiambipolar photodetector lays a solid foundation for the advancement of next-generation optoelectronic technologies.

A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices

Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W-1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities.

High performance 1D-2D CuO/MoS2 photodetectors enhanced by femtosecond laser-induced contact engineering

The integration of 2D materials with other dimensional materials opens up rich possibilities for both fundamental physics and exotic nanodevices. However, current mixed-dimensional heterostructures often suffer from interfacial contact issues and environment-induced degradation, which severely limits their performance in electronics/optoelectronics. Herein, we demonstrate a novel BN-encapsulated CuO/MoS₂ 2D-1D van der Waals heterostructure photodetector with an ultrahigh photoresponsivity which is 10-fold higher than its previous 2D-1D counterparts. The interfacial contact state and photodetection capabilities of 2D-1D heterojunctions are significantly improved via femtosecond laser irradiation induced MoS₂ wrapping and contamination removal. These h-BN protected devices show highly sensitive, gate-tunable and robust photoelectronic properties. By controlling the gate and bias voltages, the device can achieve a photoresponsivity as high as 2500 A W^-1 in the forward bias mode, or achieve a high detectivity of 6.5 × 10¹¹ Jones and a typical rise time of 2.5 ms at reverse bias. Moreover, h-BN encapsulation effectively protects the mixed-dimensional photodetector from electrical depletion by gas molecules such as O₂ and H₂O during fs laser treatment or the operation process, thus greatly improving the stability and service life in harsh environments. This work provides a new way for the further development of high performance, low cost, and robust mixed-dimensional heterostructure photodetectors by femtosecond laser contact engineering.

Tuning nanowire lasers via hybridization with two-dimensional materials

Mixed-dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS₂ monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS₂ monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect).

Piezo-phototronic effect on photocatalysis, solar cells, photodetectors and light-emitting diodes

The piezo-phototronic effect (a coupling effect of piezoelectric, photoexcitation and semiconducting properties, coined in 2010) has been demonstrated to be an ingenious and robust strategy to manipulate optoelectronic processes by tuning the energy band structure and photoinduced carrier behavior. The piezo-phototronic effect exhibits great potential in improving the quantum yield efficiencies of optoelectronic materials and devices and thus could help increase the energy conversion efficiency, thus alleviating the energy shortage crisis. In this review, the fundamental principles and challenges of representative optoelectronic materials and devices are presented, including photocatalysts (converting solar energy into chemical energy), solar cells (generating electricity directly under light illumination), photodetectors (converting light into electrical signals) and light-emitting diodes (LEDs, converting electric current into emitted light signals). Importantly, the mechanisms of how the piezo-phototronic effect controls the optoelectronic processes and the recent progress and applications in the above-mentioned materials and devices are highlighted and summarized. Only photocatalysts, solar cells, photodetectors, and LEDs that display piezo-phototronic behavior are reviewed. Material and structural design, property characterization, theoretical simulation calculations, and mechanism analysis are then examined as strategies to further enhance the quantum yield efficiency of optoelectronic devices via the piezo-phototronic effect. This comprehensive overview will guide future fundamental and applied studies that capitalize on the piezo-phototronic effect for energy conversion and storage.

Recent Development of Multifunctional Sensors Based on Low-Dimensional Materials

With the demand for accurately recognizing human actions and environmental situations, multifunctional sensors are essential elements for smart applications in various emerging technologies, such as smart robots, human-machine interface, and wearable electronics. Low-dimensional materials provide fertile soil for multifunction-integrated devices. This review focuses on the multifunctional sensors for mechanical stimulus and environmental information, such as strain, pressure, light, temperature, and gas, which are fabricated from low-dimensional materials. The material characteristics, device architecture, transmission mechanisms, and sensing functions are comprehensively and systematically introduced. Besides multiple sensing functions, the integrated potential ability of supplying energy and expressing and storing information are also demonstrated. Some new process technologies and emerging research areas are highlighted. It is presented that optimization of device structures, appropriate material selection for synergy effect, and application of piezotronics and piezo-phototronics are effective approaches for constructing and improving the performance of multifunctional sensors. Finally, the current challenges and direction of future development are proposed.

2D-1D mixed-dimensional heterostructures: progress, device applications and perspectives

Two-dimensional (2D) materials have attracted broad interests and been extensively exploited for a variety of functional applications. Moreover, one-dimensional (1D) atomic crystals can also be integrated into 2D templates to create mixed-dimensional heterostructures, and the versatility of combinations provides 2D-1D heterostructures plenty of intriguing physical properties, making them promising candidate to construct novel electronic and optoelectronic nanodevices. In this review, we first briefly present an introduction of relevant fabrication methods and structural configurations for 2D-1D heterostructures integration. We then discuss the emerged intriguing physics, including high optical absorption, efficient carrier separation, fast charge transfer and plasmon-exciton interconversion. Their potential applications such as electronic/optoelectronic devices, photonic devices, spintronic devices and gas sensors, are also discussed. Finally, we provide a brief perspective for the future opportunities and challenges in this emerging field.

Mixed-dimensional Te/CdS van der Waals heterojunction for self-powered broadband photodetector

The 2D layered crystals can physically integrate with other non-2D components through van der Waals (vdW) interaction, forming mixed-dimensional heterostructures. As a new elemental 2D material, tellurium (Te) has attracted intense recent interest for high room-temperature mobility, excellent air-stability, and the easiness of scalable synthesis. To date, the Te is still in its research infancy, and optoelectronics with low-power consumption are less reported. Motivated by this, we report the fabrication of a mixed-dimensional vdW photodiode using 2D Te and 1D CdS nanobelt in this study. The heterojunction exhibits excellent self-powered photosensing performance and a broad response spectrum up to short-wave infrared. Under 520 nm wavelength, a high responsivity of 98 mA W^-1is obtained at zero bias with an external quantum efficiency of 23%. Accordingly, the photo-to-dark current ratio and specific detectivity reach 9.2 × 10³and 1.9 × 10¹¹Jones due to the suppressed dark current. This study demonstrates the promising applications of Te/CdS vdW heterostructure in high-performance photodetectors. Besides, such a mixed-dimensional integration strategy paves a new way for device design, thus expanding the research scope for 2D Te-based optoelectronics.

A high performance self-powered photodetector based on a 1D Te-2D WS2 mixed-dimensional heterostructure

One-dimensional (1D)-two-dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of an atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. Herein, a mixed-dimensional vertical heterostructure is constructed by transferring mechanically exfoliated 2D WS₂ nanosheets on epitaxially grown 1D tellurium (Te) microwires. According to the theoretical type-II band alignment, the device exhibits a photovoltaic effect and serves as an excellent self-powered photodetector with a maximum open-circuit voltage (V _oc) up to ∼0.2 V. Upon 635 nm light illumination, the photoresponsivity, external quantum efficiency and detectivity of the self-powered photodetector (SPPD) are calculated to be 471 mA W^-1, 91% and 1.24 × 10¹² Jones, respectively. Moreover, the dark current of the SPPD is highly suppressed to the sub-pA level due to the large lateral built-in electric field, which leads to a high I _light/I _dark ratio of 10⁴ with a rise time of 25 ms and decay time of 14.7 ms. The abovementioned properties can be further enhanced under a negative bias of -2 V. In brief, the 1D Te-2D WS₂ mixed-dimensional heterostructures have great application potential in high performance photodetectors and photovoltaics.

Strain-Modulated Photoelectric Responses from a Flexible α-In2Se3/3R MoS2 Heterojunction

Semiconducting piezoelectric α-In₂Se₃ and 3R MoS₂ have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In₂Se₃ and 3R MoS₂ flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In₂Se₃/3R MoS₂ vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 10³ A W^-1 and a substantial specific detectivity of 6.2 × 10¹⁰ Jones under a compressive strain of - 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In₂Se₃/3R MoS₂ photoelectric response through an appropriate mechanical stimulus.

Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics

The development of two-dimensional (2D) semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness, unique structure, excellent optoelectronic properties and novel physics. The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic-electric performance. The strain-engineered one-dimensional materials have been well investigated, while there is a long way to go for 2D semiconductors. In this review, starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain, following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors, such as Janus 2D and 2D-Xene structures. Moreover, recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized. Furthermore, the applications of strain-engineered 2D semiconductors in sensors, photodetectors and nanogenerators are also highlighted. At last, we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications.

A mixed-dimensional 1D Se-2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors

Mixed-dimension van der Waals (vdW) p-n heterojunction photodiodes have inspired worldwide efforts to combine the excellent properties of 2D materials and traditional semiconductors without consideration of lattice mismatch. However, owing to the scarcity of intrinsic p-type semiconductors and insufficient optical absorption of the few layer 2D materials, a high performance photovoltaic device based on a vdW heterojunction is still lacking. Here, a novel mixed-dimension vdW heterojunction consisting of 1D p-type Se nanotubes and a 2D flexible n-type InSe nanosheet is proposed by a facile method, and the device shows excellent photovoltaic characteristics. Due to the superior properties of the hybrid p-n junction, the mix-dimensional van der Waals heterojunction exhibited high on/off ratios (103) at a relatively weak light intensity of 3 mW cm-2. And a broadband self-powered photodetector ranging from the UV to visible region is achieved. The highest responsivity of the device could reach up to 110 mA W-1 without an external energy supply. This value is comparable to that of the pristine Se device at 5 V and InSe device at 0.1 V, respectively. Furthermore, the response speed is enhanced by one order of magnitude over the single Se or InSe device even at a bias voltage. This work paves a new way for the further development of high performance, low cost, and energy-efficient photodetectors by using mixed-dimensional vdW heterostructures.

Peculiar piezoelectricity of atomically thin planar structures

The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.

Graphene-Based Mixed-Dimensional van der Waals Heterostructures for Advanced Optoelectronics

Although the library of 2D atomic crystals has greatly expanded over the past years, research into graphene is still one of the focuses for both academia and business communities. Due to its unique electronic structure, graphene offers a powerful platform for exploration of novel 2D physics, and has significantly impacted a wide range of fields including energy, electronics, and photonics. Moreover, the versatility of combining graphene with other functional components provides a powerful strategy to design artificial van der Waals (vdWs) heterostructures. Aside from the stacked 2D-2D vdWs heterostructure, in a broad sense graphene can hybridize with other non-2D materials through vdWs interactions. Such mixed-dimensional vdWs (MDWs) structures allow considerable freedom in material selection and help to harness the synergistic advantage of different dimensionalities, which may compensate for graphene's intrinsic shortcomings. A succinct overview of representative advances in graphene-based MDWs heterostructures is presented, ranging from assembly strategies to applications in optoelectronics. The scientific merit and application advantages of these hybrid structures are particularly emphasized. Moreover, considering possible breakthroughs in new physics and application potential on an industrial scale, the challenges and future prospects in this active research field are highlighted.

Crystal-Orientation-Related Dynamic Tuning of the Lasing Spectra of CdS Nanobelts by Piezoelectric Polarization

Realizing dynamic wavelength tunability could bring about tremendous impacts in laser technology, pressure nanosensing, and lab-on-a-chip devices. Here, we demonstrate an original strategy to operate the lasing mode shift through reversible length changes of a CdS nanobelt, which is determined by the direction of piezoelectric polarization. The relationships between the direction of applied strain, the lasing mode shift, and the tunable effective refractive index are elaborated in detail. The correlation between the piezoelectric polarization-induced lasing mode red shift and the blue shift in the wavelength of the lasing mode output caused by the Poisson effect is discussed in depth, as well. Our study comprehensively considers the influence of both the cavity size variations and refractive index changes on the control of the lasing mode and provides a deeper understanding of the strain-induced lasing mode shift.

Flexible Sensors—From Materials to Applications

Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.

The Opposite Anisotropic Piezoresistive Effect of ReS2

Mechanical strain induced changes in the electronic properties of two-dimensional (2D) materials is of great interest for both fundamental studies and practical applications. The anisotropic 2D materials may further exhibit different electronic changes when the strain is applied along different crystalline axes. The resulting anisotropic piezoresistive phenomenon not only reveals distinct lattice-electron interaction along different principle axes in low-dimensional materials but also can accurately sense/recognize multidimensional strain signals for the development of strain sensors, electronic skin, human-machine interfaces, etc. In this work, we systematically studied the piezoresistive effect of an anisotropic 2D material of rhenium disulfide (ReS₂), which has large anisotropic ratio. The measurement of ReS₂ piezoresistance was experimentally performed on the devices fabricated on a flexible substrate with electrical channels made along the two principle axes, which were identified noninvasively by the reflectance difference microscopy developed in our lab. The result indicated that ReS₂ had completely opposite (positive and negative) piezoresistance along two principle axes, which differed from any previously reported anisotropic piezoresistive effect in other 2D materials. We attributed the opposite anisotropic piezoresistive effect of ReS₂ to the strain-induced broadening and narrowing of the bandgap along two principle axes, respectively, which was demonstrated by both reflectance difference spectroscopy and theoretical calculations.

Oxygen-Doped MoS2 Nanospheres/CdS Quantum Dots/g-C3N4 Nanosheets Super-Architectures for Prolonged Charge Lifetime and Enhanced Visible-Light-Driven Photocatalytic Performance

Oxygen-doped MoS₂ nanospheres/CdS quantum dots/g-C₃N₄ nanosheets are synthetized through hydrothermal and chemical bath deposition-calcination processes. The prepared materials are characterized by X-ray diffraction transient-state photoluminescence spectra, transmission electron microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrochemical experiment. These results show that the ternary composite material has longer lifetime of photogenerated carriers and more active sites, thereby enhancing photocatalytic performance. CdS quantum dots act as a bridge between the intermediate transport charges in the ternary composite. The oxygen defect engineering prolongs the lifetime of carriers obviously, which is confirmed by transient-state photoluminescence. Moreover, the photocatalytic H₂ evolution and photodegradation of bisphenol A for MoS₂/CdS/g-C₃N₄ is up to 956 μmol h^-1 g^-1 and 95.2% under visible-light irradiation, respectively. Furthermore, excellent photocatalytic activity can be ascribed to the synergistic effect of defect engineering and formation of ternary heterostructures, which is with broad-spectrum response, longer lifetime of photo-induced electron-holes, and more surface active sites.

SbSI whisker/PbI2 flake mixed-dimensional van der Waals heterostructure for photodetection

Mixed-dimensional van der Waals heterostructure formed from an individual SbSI whisker and individual PbI₂ flake for photodetection.

Study on the mechanism of excessive apoptosis of nucleus pulposus cells induced by shRNA-Piezo1 under abnormal mechanical stretch stress

OBJECTIVE

The aim of the study was to explore the mechanism of excessive apoptosis of nucleus pulposus cells induced by short hairpin RNA (shRNA) Piezo type mechanosensitive ion channel component 1 (Piezo1) under abnormal mechanical stretch stress.

METHODS

In vitro mechanical stretch stress model of nucleus pulposus cells in vitro was established, in which the expression of Piezo1 was interfered by transfection of shRNA-Piezo1 interfering vector. Both messenger RNA and protein level of Piezo1 were measured by reverse-transcription polymerase chain reaction and Western blot analysis, respectively. Cytoplasmic Ca²⁺ was detected by Fluo3-AM kit, and changes of mitochondrial membrane potential in cells were detected using Cell Meter Assay kit. Finally, the apoptosis was evaluated with annexin V-fluorescein isothiocyanate kit.

RESULTS

The highest transfection efficiency of lentivirus titer was 1 × 10 TU/mL and the nucleus pulposus cells were transfected with plural multiplicity of infection = 50. Homo-3201 sequence exhibited the most effective silencing effect and was used in subsequent experiments as the default sequence of shRNA-Piezo1. The calcium content in the cytoplasm of the tension stress group increased significantly compared with that in the blank control group ( q = 3.773; P < 0.05). The level of cytosolic calcium in shRNA-interference group was significantly lower than that in stretch stress group ( q = 5.159; P < 0.05). Stretch stress treatment resulted in an elevated ratio of mitochondrial membrane potential turnover as opposed to blank control group ( q = 4.332; P < 0.05), while shRNA-interference group showed smaller ratio of mitochondrial membrane potential turnover than that in stretch stress group ( q = 4.974; P < 0.05). Similar results were also observed in apoptosis rate analysis ( q = 3.175; P < 0.05).

CONCLUSION

ShRNA-Piezo1 can protect cells by reducing the level of intracellular Ca²⁺ and the change of mitochondrial membrane potential.