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Hlushchenko D, Siudzinska A, Cybinska J, Guzik M, Bachmatiuk A, Kudrawiec R. Stability of mechanically exfoliated layered monochalcogenides under ambient conditions. Sci Rep 2023; 13:19114. [PMID: 37925524 PMCID: PMC10625602 DOI: 10.1038/s41598-023-46092-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 10/27/2023] [Indexed: 11/06/2023] Open
Abstract
Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored. This article presents a comprehensive study of the degradation mechanism in mechanically exfoliated monochalcogenides in ambient conditions using Raman and photoluminescence spectroscopy supported by structural methods. A higher stability (up to three weeks) was observed for GaS. The most reactive were Se-containing monochalcogenides. Surface protrusions appeared after the ambient exposure of GeSe was detected by scanning electron microscopy. In addition, the degradation of GeS and GeSe flakes was observed in the operando experiment in transmission electron microscopy. Additionally, the amorphization of the material progressed from the flake edges. The reported results and conclusions on the degradation of LMs are useful to understand surface oxidation, air stability, and to fabricate stable devices with monochalcogenides. The results indicate that LMs are more challenging for exfoliation and optical studies than transition metal dichalcogenides such as MoS2, MoSe2, WS2, or WSe2.
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Affiliation(s)
- Daria Hlushchenko
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
| | - Anna Siudzinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Joanna Cybinska
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Malgorzata Guzik
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
- Faculty of Chemistry, University of Wroclaw, F. Joliot-Curie 14, 50-383, Wroclaw, Poland
| | - Alicja Bachmatiuk
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland
| | - Robert Kudrawiec
- Lukasiewicz Research Network, PORT Polish Center for Technology Development, Stablowicka 147, 54-066, Wroclaw, Poland.
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Science and Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland.
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2
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Yoo C, Adepu V, Han SS, Kim JH, Shin JC, Cao J, Park J, Al Mahfuz MM, Tetard L, Lee GH, Ko DK, Sahatiya P, Jung Y. Low-Temperature Centimeter-Scale Growth of Layered 2D SnS for Piezoelectric Kirigami Devices. ACS NANO 2023; 17:20680-20688. [PMID: 37831937 DOI: 10.1021/acsnano.3c08826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/15/2023]
Abstract
Tin monosulfide (SnS) is a promising piezoelectric material with an intrinsically layered structure, making it attractive for self-powered wearable and stretchable devices. However, for practical application purposes, it is essential to improve the output and manufacturing compatibility of SnS-based piezoelectric devices by exploring their large-area synthesis principle. In this study, we report the chemical vapor deposition (CVD) growth of centimeter-scale two-dimensional (2D) SnS layers at temperatures as low as 200 °C, allowing compatibility with processing a range of polymeric substrates. The intrinsic piezoelectricity of 2D SnS layers directly grown on polyamides (PIs) was confirmed by piezoelectric force microscopy (PFM) phase maps and force-current corroborative measurements. Furthermore, the structural robustness of the centimeter-scale 2D SnS layers/PIs allowed for engraving complicated kirigami patterns on them. The kirigami-patterned 2D SnS layer devices exhibited intriguing strain-tolerant piezoelectricity, which was employed in detecting human body motions and generating photocurrents irrespective of strain rate variations. These results establish the great promise of 2D SnS layers for practically relevant large-scale device technologies with coupled electrical and mechanical properties.
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Affiliation(s)
- Changhyeon Yoo
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Vivek Adepu
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani Hyderabad Campus, Hyderabad, 500078, India
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Jung Han Kim
- Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea
| | - June-Chul Shin
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Justin Cao
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Junsung Park
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Mohammad M Al Mahfuz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Laurene Tetard
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Physics Department, University of Central Florida, Orlando, Florida, 32816, United States
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Parikshit Sahatiya
- Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science Pilani Hyderabad Campus, Hyderabad, 500078, India
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
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3
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Chin JR, Frye MB, Liu DSH, Hilse M, Graham IC, Shallenberger J, Wang K, Engel-Herbert R, Wang M, Shin YK, Nayir N, van Duin ACT, Garten LM. Self-limiting stoichiometry in SnSe thin films. NANOSCALE 2023; 15:9973-9984. [PMID: 37272496 DOI: 10.1039/d3nr00645j] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Unique functionalities can arise when 2D materials are scaled down near the monolayer limit. However, in 2D materials with strong van der Waals bonds between layers, such as SnSe, maintaining stoichiometry while limiting vertical growth is difficult. Here, we describe how self-limiting stoichiometry can promote the growth of SnSe thin films deposited by molecular beam epitaxy. The Pnma phase of SnSe was stabilized over a broad range of Sn : Se flux ratios from 1 : 1 to 1 : 5. Changing the flux ratio does not affect the film stoichiometry, but influences the predominant crystallographic orientation. ReaxFF molecular dynamics (MD) simulation demonstrates that, while a mixture of Sn/Se stoichiometries forms initially, SnSe stabilizes as the cluster size evolves. The MD results further show that the excess selenium coalesces into Se clusters that weakly interact with the surface of the SnSe particles, leading to the limited stoichiometric change. Raman spectroscopy corroborates this model showing the initial formation of SnSe2 transitioning into SnSe as experimental film growth progresses. Transmission electron microscopy measurements taken on films deposited with growth rates above 0.25 Å s-1 show a thin layer of SnSe2 that disrupts the crystallographic orientation of the SnSe films. Therefore, using the conditions for self-limiting SnSe growth while avoiding the formation of SnSe2 was found to increase the lateral scale of the SnSe layers. Overall, self-limiting stoichiometry provides a promising avenue for maintaining growth of large lateral-scale SnSe for device fabrication.
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Affiliation(s)
- Jonathan R Chin
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
| | - Marshall B Frye
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
| | - Derrick Shao-Heng Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Maria Hilse
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Ian C Graham
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
| | - Jeffrey Shallenberger
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Ke Wang
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Roman Engel-Herbert
- Paul-Drude Institut für Festkörperelektronik Berlin, Leibniz-Institut im Forschungsverbund Berlin eV., Berlin 10117, Germany
| | - Mengyi Wang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Yun Kyung Shin
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Nadire Nayir
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
- Physics Department, Karamanoglu Mehmetbey University, Karaman, 70000, Turkey
| | - Adri C T van Duin
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
| | - Lauren M Garten
- The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA.
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Sarkar AS, Konidakis I, Gagaoudakis E, Maragkakis GM, Psilodimitrakopoulos S, Katerinopoulou D, Sygellou L, Deligeorgis G, Binas V, Oikonomou IM, Komninou P, Kiriakidis G, Kioseoglou G, Stratakis E. Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2201842. [PMID: 36574469 PMCID: PMC9951343 DOI: 10.1002/advs.202201842] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Revised: 11/20/2022] [Indexed: 06/17/2023]
Abstract
Recent advances in atomically thin two dimensional (2D) anisotropic group IVA -VI metal monochalcogenides (MMCs) and their fascinating intrinsic properties and potential applications are hampered due to an ongoing challenge of monolayer isolation. Among the most promising MMCs, tin (II) sulfide (SnS) is an earth-abundant layered material with tunable bandgap and anisotropic physical properties, which render it extraordinary for electronics and optoelectronics. To date, however, the successful isolation of atomically thin SnS single layers at large quantities has been challenging due to the presence of strong interlayer interactions, attributed to the lone-pair electrons of sulfur. Here, a novel liquid phase exfoliation approach is reported, which enables the overcome of such strong interlayer binding energy. Specifically, it demonstrates that the synergistic action of external thermal energy with the ultrasound energy-induced hydrodynamic force in solution gives rise to the systematic isolation of highly crystalline SnS monolayers (1L-SnS). It is shown that the exfoliated 1L-SnS crystals exhibit high carrier mobility and deep-UV spectral photodetection, featuring a fast carrier response time of 400 ms. At the same time, monolayer-based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10-3 A W-1 and remarkable stability upon prolonged operation in ambient conditions. This study opens a new avenue for large-scale isolation of highly crystalline SnS and other MMC manolayers for a wide range of applications, including extended area nanoelectronic devices, printed from solution.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - Ioannis Konidakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - E. Gagaoudakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - G. M. Maragkakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - S. Psilodimitrakopoulos
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - D. Katerinopoulou
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - L. Sygellou
- Institute of Chemical Engineering Sciences (ICE‐HT)Foundation of Research and TechnologyHellas, P.O. Box 1414Rio Patras26504Greece
| | - G. Deligeorgis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - Vassilios Binas
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
| | - Ilias M. Oikonomou
- Department of PhysicsAristotle University of ThessalonikiThessaloniki54124Greece
| | - Philomela Komninou
- Department of PhysicsAristotle University of ThessalonikiThessaloniki54124Greece
| | - G. Kiriakidis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
| | - G. Kioseoglou
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of Materials Science and TechnologyUniversity of CreteHeraklion710 03Greece
| | - E. Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklion700 13Greece
- Department of PhysicsUniversity of CreteHeraklion710 03Greece
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5
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Luo J, Song X, Lu Y, Hu Y, Lv X, Li L, Li X, Deng J, Yan Y, Jiang Y, Xia C. Phase-controlled synthesis of SnS 2and SnS flakes and photodetection properties. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:285701. [PMID: 35447611 DOI: 10.1088/1361-648x/ac6926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Accepted: 04/21/2022] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) layered tin sulfide compounds including SnS2and SnS have attracted increasing attention due to their great potential application in the fields of optoelectronics and energy storage. However, device development has been delayed by the lack of capabilities to synthesize large-scale and high-quality 2D tin sulfide. Here, a phase-controlled synthesis of SnS2and SnS flakes with lateral size over 100 μm was successfully realized via a facile chemical vapor deposition method. The lateral size of flakes and phase transformation of SnS2to SnS can be tuned via changing the synthesis temperature. Compared to the formation of the SnS2phase at relative low temperature (<750 °C), the SnS phase is favorable at higher temperature. The phototransistor based on the as-prepared SnS2and SnS exhibits excellent photoresponse to 405 nm laser, including a high responsivity (1.7 × 106mA W-1), fast response rates (rise/decay time of 13/51 ms), an outstanding external quantum efficiency (5.3 × 105%), and a remarkable detectivity (6.24 × 1012Jones) for SnS2-based phototransistor, and these values are superior to the most reported SnS2based photodetectors. Although the responsivity (3390 mA W-1) and detectivity (1.1 × 1010Jones) of SnS-based device is lower than that of the SnS2phototransistor, it has a faster rise/decay time of 3.10/1.59 ms. This work provides a means of tuning the size and phase of 2D layered tin sulfide, and promotes the application of SnS2in high-performance optoelectronic devices.
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Affiliation(s)
- Jiaqi Luo
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Xiaohui Song
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Yingying Lu
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Yanjie Hu
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Xiaojing Lv
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Lin Li
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Xueping Li
- Department of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Jianping Deng
- Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong 723001, People's Republic of China
| | - Yong Yan
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Yurong Jiang
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Congxin Xia
- Henan Key Laboratory of Photovoltaic Materials, Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
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Chang YR, Nishimura T, Taniguchi T, Watanabe K, Nagashio K. Performance Enhancement of SnS/ h-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method. ACS APPLIED MATERIALS & INTERFACES 2022; 14:19928-19937. [PMID: 35442622 DOI: 10.1021/acsami.2c05534] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Searching for the counterpart of well-developed two-dimensional (2D) n-type field effect transistors (FETs) is indispensable for complementary logic circuit applications for 2D devices. Although SnS is regarded as a potential candidate for high-performance p-type FETs, recent experiments only show poor results deviating from the theoretically predicted high mobility. In this research, the serious performance degradation due to the surface oxidation of SnS, which commonly occurs in most 2D materials, is addressed through surface oxide conversion using highly reactive Ti. In this conversion process, which is confirmed by systematic characterization, the reduction of SnS surface oxide is accompanied by the formation of functional titanium oxide, which works as both a conductive intermediate layer to improve the contact property and a buffer layer of the high-k top gate insulator at the channel region. Consequently, a record-high field effect mobility of 87.4 cm2 V-1 s-1 in SnS p-type FETs is achieved. The surface oxide conversion method applied here is consistent with our previous thermodynamic prediction, and this novel technique can be widely introduced to all 2D materials that are vulnerable to oxidation and facilitate the future development of 2D devices.
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Affiliation(s)
- Yih-Ren Chang
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute of Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute of Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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7
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 106] [Impact Index Per Article: 53.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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9
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Lu XF, Zhang Y, Wang N, Luo S, Peng K, Wang L, Chen H, Gao W, Chen XH, Bao Y, Liang G, Loh KP. Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS. NANO LETTERS 2021; 21:8800-8807. [PMID: 34644096 DOI: 10.1021/acs.nanolett.1c03169] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Memristor devices that exhibit high integration density, fast speed, and low power consumption are candidates for neuromorphic devices. Here, we demonstrate a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such as a switching voltage ∼0.2 V, a switching speed faster than 1.5 ns, high endurance switching cycles, and an ultralarge on/off ratio of 108. The device exhibits a power consumption as low as ∼100 fJ per switch. Chip-level simulations of the memristor based on 32 × 32 high-density crossbar arrays with 50 nm feature size reveal on-chip learning accuracy of 87.76% (close to the ideal software accuracy 90%) for CIFAR-10 image classifications. The ultrafast and low energy switching of p-type SnS compared to n-type transition metal dichalcogenides is attributed to the presence of cation vacancies and van der Waals gap that lower the activation barrier for Ag ion migration.
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Affiliation(s)
- Xiu Fang Lu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Yishu Zhang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Sheng Luo
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Kunling Peng
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Lin Wang
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Hao Chen
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Xian Hui Chen
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yang Bao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China
| | - Gengchiau Liang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
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10
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Chang YR, Nishimura T, Nagashio K. Thermodynamic Perspective on the Oxidation of Layered Materials and Surface Oxide Amelioration in 2D Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43282-43289. [PMID: 34478258 DOI: 10.1021/acsami.1c13279] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Surface oxidation is an unneglectable problem for 2D semiconductors because it hinders the practical application of 2D material-based devices. In this research, the oxidation of layered materials is investigated by a thermodynamic approach to verify their oxidation tendency. It was found that almost all 2D materials are thermodynamically unstable in the presence of oxygen at room temperature. Two potential solutions for surface oxidation are proposed in this work: (i) the conversion of the surface oxides to functional oxides through the deposition of active metals and (ii) the recovery of original 2D materials from the surface oxides by 2D material heterostructure formation with the same chalcogen group. Supported by thermodynamic calculations, both approaches are feasible to ameliorate the surface oxides of 2D materials by the appropriate selection of metals for deposition or 2D materials for heterostructure formation. Thermodynamic data of 64 elements and 75 2D materials are included and compared in this research, which can improve gate insulator or electrode contact material selection in 2D devices to solve the surface oxidation issue. For instance, yttrium and titanium are good candidates for surface oxide conversion, while zirconium and hafnium chalcogenide can trigger the recovery of original 2D materials from their surface oxides. The systematic diagrams presented in this work can serve as a guideline for considering surface oxidation in future device fabrication from various 2D materials.
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Affiliation(s)
- Yih-Ren Chang
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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11
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Cao VA, Kim M, Hu W, Lee S, Youn S, Chang J, Chang HS, Nah J. Enhanced Piezoelectric Output Performance of the SnS 2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition. ACS NANO 2021; 15:10428-10436. [PMID: 34014067 DOI: 10.1021/acsnano.1c02757] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, the inherent piezoelectric properties of the 2D transition-metal dichalcogenides (TMDs) tin monosulfide (SnS) and tin disulfide (SnS2) have attracted much attention. Thus the piezoelectricity of these materials has been theoretically and experimentally investigated for energy-harvesting devices. However, the piezoelectric output performance of the SnS2- or SnS-based 2D thin film piezoelectric nanogenerator (PENG) is still relatively low, and the fabrication process is not suitable for practical applications. Here we report the formation of the SnS2/SnS heterostructure thin film for the enhanced output performance of a PENG using atomic layer deposition (ALD). The piezoelectric response of the heterostructure thin film was increased by ∼40% compared with that of the SnS2 thin film, attributed to large band offset induced by the heterojunction formation. Consequently, the output voltage and current density of the heterostructure PENG were 60 mV and 11.4 nA/cm2 at 0.6% tensile strain, respectively. In addition, thickness-controllable large-area uniform thin-film deposition via ALD ensures that the reproducible output performance is achieved and that the output density can be lithographically adjusted depending on the applications. Therefore, the SnS2/SnS heterostructure PENG fabricated in this work can be employed to develop a flexible energy-harvesting device or an attachable self-powered sensor for monitoring pulse and human body movement.
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Affiliation(s)
- Viet Anh Cao
- Department of Electrical Engineering, Chungnam National University, Daejeon 34134, Korea
| | - Minje Kim
- Department of Electrical Engineering, Chungnam National University, Daejeon 34134, Korea
| | - Weiguang Hu
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon 34134, Korea
| | - Sol Lee
- Department of Electrical Engineering, Chungnam National University, Daejeon 34134, Korea
| | - Sukhyeong Youn
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea
| | - Jiwon Chang
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Korea
| | - Hyo Sik Chang
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon 34134, Korea
| | - Junghyo Nah
- Department of Electrical Engineering, Chungnam National University, Daejeon 34134, Korea
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12
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Xiao Y, Zheng W, Yuan B, Wen C, Lanza M. Highly Accurate Thickness Determination of 2D Materials. CRYSTAL RESEARCH AND TECHNOLOGY 2021. [DOI: 10.1002/crat.202100056] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
Affiliation(s)
- Yiping Xiao
- Institute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China
| | - Wenwen Zheng
- Institute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China
| | - Bin Yuan
- Institute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China
| | - Chao Wen
- Institute of Functional Nano and Soft Materials Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University 199 Ren‐Ai Road Suzhou 215123 China
| | - Mario Lanza
- Physical Sciences and Engineering Division King Abdullah University of Science and Technology (KAUST) Thuwal 23955‐6900 Saudi Arabia
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13
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Liang J, Li H, Liu F, Lu J. Layer‐Controlled Low‐Power Tunneling Transistors Based on SnS Homojunction. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202000290] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Jiakun Liang
- College of Mechanical and Material Engineering North China University of Technology Beijing 100144 P. R. China
| | - Hong Li
- College of Mechanical and Material Engineering North China University of Technology Beijing 100144 P. R. China
| | - Fengbin Liu
- College of Mechanical and Material Engineering North China University of Technology Beijing 100144 P. R. China
| | - Jing Lu
- State Key Laboratory of Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
- Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics Nantong 226000 P. R. China
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14
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A Review of the Synthesis, Properties, and Applications of Bulk and Two-Dimensional Tin (II) Sulfide (SnS). APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11052062] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
Tin(II) sulfide (SnS) is an attractive semiconductor for solar energy conversion in thin film devices due to its bandgap of around 1.3 eV in its orthorhombic polymorph, and a band gap energy of 1.5–1.7 eV for the cubic polymorph—both of which are commensurate with efficient light harvesting, combined with a high absorption coefficient (10−4 cm−1) across the NIR–visible region of the electromagnetic spectrum, leading to theoretical power conversion efficiencies >30%. The high natural abundance and a relative lack of toxicity of its constituent elements means that such devices could potentially be inexpensive, sustainable, and accessible to most nations. SnS exists in its orthorhombic form as a layer structure similar to black phosphorus; therefore, the bandgap energy can be tuned by thinning the material to nanoscale dimensions. These and other properties enable SnS applications in optoelectronic devices (photovoltaics, photodetectors), lithium- and sodium-ion batteries, and sensors among others with a significant potential for a variety of future applications. The synthetic routes, structural, optical and electronic properties as well as their applications (in particular photonic applications and energy storage) of bulk and 2D tin(II) sulfide are reviewed herein.
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15
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Hu W, Sheng Z, Hou X, Chen H, Zhang Z, Zhang DW, Zhou P. Ambipolar 2D Semiconductors and Emerging Device Applications. SMALL METHODS 2021; 5:e2000837. [PMID: 34927812 DOI: 10.1002/smtd.202000837] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2020] [Revised: 10/12/2020] [Indexed: 06/14/2023]
Abstract
With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, light-emitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrated optoelectronic circuits, and artificial neural network image sensors, enriching the functions of conventional devices and bringing breakthroughs to build new architectures. This review first focuses on the basic knowledge including fundamental principle of ambipolar semiconductors, basic material preparation techniques, and how to obtain the ambipolar behavior through electrical contact engineering. Then, the current ambipolar 2D semiconductors and their preparation approaches and main properties are summarized. Finally, the emerging new device structures are overviewed in detail, along with their novel electronic and optoelectronic applications. It is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.
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Affiliation(s)
- Wennan Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zhe Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiang Hou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Huawei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Zengxing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
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16
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Li X, Song Z, Zhao H, Zhang W, Sun Z, Liang H, Zhu H, Pei J, Li L, Ruan S. SnSe Nanosheets: From Facile Synthesis to Applications in Broadband Photodetections. NANOMATERIALS 2020; 11:nano11010049. [PMID: 33375522 PMCID: PMC7824353 DOI: 10.3390/nano11010049] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Revised: 12/22/2020] [Accepted: 12/24/2020] [Indexed: 02/05/2023]
Abstract
In recent years, using two-dimensional (2D) materials to realize broadband photodetection has become a promising area in optoelectronic devices. Here, we successfully synthesized SnSe nanosheets (NSs) by a facile tip ultra-sonication method in water-ethanol solvent which was eco-friendly. The carrier dynamics of SnSe NSs was systematically investigated via a femtosecond transient absorption spectroscopy in the visible wavelength regime and three decay components were clarified with delay time of τ1 = 0.77 ps, τ2 = 8.3 ps, and τ3 = 316.5 ps, respectively, indicating their potential applications in ultrafast optics and optoelectronics. As a proof-of-concept, the photodetectors, which integrated SnSe NSs with monolayer graphene, show high photoresponsivities and excellent response speeds for different incident lasers. The maximum photo-responsivities for 405, 532, and 785 nm were 1.75 × 104 A/W, 4.63 × 103 A/W, and 1.52 × 103 A/W, respectively. The photoresponse times were ~22.6 ms, 11.6 ms, and 9.7 ms. This behavior was due to the broadband light response of SnSe NSs and fast transportation of photocarriers between the monolayer graphene and SnSe NSs.
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Affiliation(s)
- Xiangyang Li
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (Z.S.); (H.Z.)
| | - Zongpeng Song
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (Z.S.); (H.Z.)
| | - Huancheng Zhao
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
| | - Wenfei Zhang
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
| | - Zhenhua Sun
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
| | - Huawei Liang
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
| | - Haiou Zhu
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (Z.S.); (H.Z.)
| | - Jihong Pei
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China;
| | - Ling Li
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
- Correspondence: author: (L.L.); (S.R.)
| | - Shuangchen Ruan
- Shenzhen Key Laboratory of Laser Engineering, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; (X.L.); (H.Z.); (W.Z.); (Z.S.); (H.L.)
- College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China; (Z.S.); (H.Z.)
- Correspondence: author: (L.L.); (S.R.)
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17
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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18
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Kawamoto H, Higashitarumizu N, Nagamura N, Nakamura M, Shimamura K, Ohashi N, Nagashio K. Micrometer-scale monolayer SnS growth by physical vapor deposition. NANOSCALE 2020; 12:23274-23281. [PMID: 33206097 DOI: 10.1039/d0nr06022d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, monolayer SnS, a two-dimensional group IV monochalcogenide, was grown on a mica substrate at the micrometer-size scale by the simple physical vapor deposition (PVD), resulting in the successful demonstration of its in-plane room temperature ferroelectricity. However, the reason behind the monolayer growth remains unclear because it had been considered that the SnS growth inevitably results in a multilayer thickness due to the strong interlayer interaction arising from lone pair electrons. Here, we investigate the PVD growth of monolayer SnS from two different feed powders, highly purified SnS and commercial phase-impure SnS. Contrary to expectations, it is suggested that the mica substrate surface is modified by sulfur evaporated from the Sn2S3 contaminant in the as-purchased powder and the lateral growth of monolayer SnS is facilitated due to the enhanced surface diffusion of SnS precursor molecules, unlike the growth from the highly purified powder. This insight provides a guide to identify further controllable growth conditions.
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Affiliation(s)
- H Kawamoto
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
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19
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Sarkar AS, Stratakis E. Recent Advances in 2D Metal Monochalcogenides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001655. [PMID: 33173730 PMCID: PMC7610304 DOI: 10.1002/advs.202001655] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/04/2020] [Revised: 07/24/2020] [Indexed: 06/11/2023]
Abstract
The family of emerging low-symmetry and structural in-plane anisotropic two-dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IVA-VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in-plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.
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Affiliation(s)
- Abdus Salam Sarkar
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
| | - Emmanuel Stratakis
- Institute of Electronic Structure and LaserFoundation for Research and Technology‐HellasHeraklionCrete700 13Greece
- Physics DepartmentUniversity of CreteHeraklionCrete710 03Greece
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20
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Krishnamurthi V, Khan H, Ahmed T, Zavabeti A, Tawfik SA, Jain SK, Spencer MJS, Balendhran S, Crozier KB, Li Z, Fu L, Mohiuddin M, Low MX, Shabbir B, Boes A, Mitchell A, McConville CF, Li Y, Kalantar-Zadeh K, Mahmood N, Walia S. Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004247. [PMID: 32960475 DOI: 10.1002/adma.202004247] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Revised: 08/09/2020] [Indexed: 06/11/2023]
Abstract
Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large-area SnS layers exhibit a broadband spectral response ranging from deep-ultraviolet (UV) to near-infrared (NIR) wavelengths (i.e., 280-850 nm) with fast photodetection capabilities. For single-unit-cell-thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W-1 ) than commercial photodetectors at a room-temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high-performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.
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Affiliation(s)
- Vaishnavi Krishnamurthi
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | - Hareem Khan
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | - Taimur Ahmed
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
- Functional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | - Ali Zavabeti
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
- Department of Chemical Engineering, The University of Melbourne, Melbourne, Victoria, 3010, Australia
| | | | - Shubhendra Kumar Jain
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
- Functional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
- Sensor Devices and Metrology Group, CSIR-National Physical Laboratory (CSIR-NPL), Dr K. S. Krishnan Road, New Delhi, 110012, India
- Academy of Scientific & Innovative Research, (AcSIR), CSIR-HRDC Campus, Ghaziabad, Uttar Pradesh, 201002, India
| | - Michelle J S Spencer
- School of Science, RMIT University, Melbourne, Victoria, 3001, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, School of Science, RMIT University, GPO Box 2476, Melbourne, Victoria, 3001, Australia
| | | | - Kenneth B Crozier
- School of Physics, The University of Melbourne, Melbourne, Victoria, 3010, Australia
- Department of Electrical and Electronic Engineering, The University of Melbourne, Melbourne, Victoria, 3010, Australia
- Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems, The University of Melbourne, Melbourne, Victoria, 3010, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT, 2601, Australia
- Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems, The Australian National University, Canberra, ACT, 2601, Australia
| | - Md Mohiuddin
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | - Mei Xian Low
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
- Functional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | - Babar Shabbir
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria, 3800, Australia
| | - Andreas Boes
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | - Arnan Mitchell
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | | | - Yongxiang Li
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | - Kourosh Kalantar-Zadeh
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Nasir Mahmood
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
| | - Sumeet Walia
- School of Engineering, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
- Functional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, 124 La Trobe Street, Melbourne, Victoria, 3001, Australia
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Liquid metal-based synthesis of high performance monolayer SnS piezoelectric nanogenerators. Nat Commun 2020; 11:3449. [PMID: 32651367 PMCID: PMC7351749 DOI: 10.1038/s41467-020-17296-0] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2019] [Accepted: 06/18/2020] [Indexed: 11/09/2022] Open
Abstract
The predicted strong piezoelectricity for monolayers of group IV monochalcogenides, together with their inherent flexibility, makes them likely candidates for developing flexible nanogenerators. Within this group, SnS is a potential choice for such nanogenerators due to its favourable semiconducting properties. To date, access to large-area and highly crystalline monolayer SnS has been challenging due to the presence of strong inter-layer interactions by the lone-pair electrons of S. Here we report single crystal across-the-plane and large-area monolayer SnS synthesis using a liquid metal-based technique. The characterisations confirm the formation of atomically thin SnS with a remarkable carrier mobility of ~35 cm2 V−1 s−1 and piezoelectric coefficient of ~26 pm V−1. Piezoelectric nanogenerators fabricated using the SnS monolayers demonstrate a peak output voltage of ~150 mV at 0.7% strain. The stable and flexible monolayer SnS can be implemented into a variety of systems for efficient energy harvesting. The presence of strong inter-layer interactions has hindered the synthesis efforts towards large-area and highly crystalline monolayer SnS. Here, the authors report synthesis of large-area monolayer SnS using a liquid metal-based technique, and fabricate piezoelectric nano-generators with average peak output voltage of 150 mV at 0.7% strain.
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Higashitarumizu N, Kawamoto H, Lee CJ, Lin BH, Chu FH, Yonemori I, Nishimura T, Wakabayashi K, Chang WH, Nagashio K. Purely in-plane ferroelectricity in monolayer SnS at room temperature. Nat Commun 2020; 11:2428. [PMID: 32415121 PMCID: PMC7229038 DOI: 10.1038/s41467-020-16291-9] [Citation(s) in RCA: 99] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Accepted: 04/27/2020] [Indexed: 12/23/2022] Open
Abstract
2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd–even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics. Out-of-plane ferroelectricity is usually unstable in the two dimensional limit due to the presence of the depolarization field. Here, the authors successfully circumvent this issue by growing µm-sized SnS monolayers that exhibit in-plane ferroelectricity that is stable at room temperature.
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Affiliation(s)
- Naoki Higashitarumizu
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
| | - Hayami Kawamoto
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
| | - Chien-Ju Lee
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Bo-Han Lin
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Fu-Hsien Chu
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Itsuki Yonemori
- Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo, 669-1337, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan
| | - Katsunori Wakabayashi
- Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo, 669-1337, Japan
| | - Wen-Hao Chang
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan.,Center for Emergent Functional Matter Science (CEFMS), National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan.
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Hess P. Thickness of elemental and binary single atomic monolayers. NANOSCALE HORIZONS 2020; 5:385-399. [PMID: 32118242 DOI: 10.1039/c9nh00658c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The thickness of monolayers is a fundamental property of two-dimensional (2D) materials that has not found the necessary attention. It plays a crucial role in their mechanical behavior, the determination of related physical properties such as heat transfer, and especially the properties of multilayer systems. Measurements of the thickness of free-standing monolayers are widely lacking and notoriously too large. Consistent thicknesses have been reported for single layers of graphene, boronitrene, and SiC derived from interlayer spacing measured by X-ray diffraction in multilayer systems, first-principles calculations of the interlayer spacing, and tabulated van der Waals (vdW) diameters. Furthermore, the electron density-based volume model agrees with the geometric slab model for graphene and boronitrene. For other single-atom monolayers DFT calculations and molecular dynamics (MD) simulations deliver interlayer distances that are often much smaller than the vdW diameter, owing to further electrostatic and (weak) covalent interlayer interaction. Monolayers strongly bonded to a surface also show this effect. If only weak vdW forces exist, the vdW diameter delivers a reasonable thickness not only for free-standing monolayers but also for few-layer systems and adsorbed monolayers. Adding the usually known corrugation effect of buckled or puckered monolayers to the vdW diameter delivers an upper limit of the monolayer thickness. The study presents a reference database of thickness values for elemental and binary group-IV and group-V monolayers, as well as binary III-V and IV-VI compounds.
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Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-69120 Heidelberg, Germany.
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Bhuvaneswari R, Nagarajan V, Chandiramouli R. Toxicants in cigarette smoke adsorbed on red phosphorene nanosheet: A first-principles insight. Chem Phys 2020. [DOI: 10.1016/j.chemphys.2019.110604] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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