Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts

Revealing Bipolar Photoresponse in Multiheterostructured WTe2-GaTe/ReSe2-WTe2 P-N Diode by Hybrid 2D Contact Engineering

The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies on 2D materials have reignited attraction in the p-n junction, with promising potential for applications in both electronics and optoelectronics. 2D materials provide exceptional band structural diversity in p-n junction devices, which is rare in regular bulk semiconductors. In this article, we demonstrate a p-n diode based on multiheterostructure configuration, WTe2-GaTe-ReSe2-WTe2, where WTe2 acts as heterocontact with GaTe/ReSe2 junction. Our devices with heterocontacts of WTe2 showed excellent performance in electronic and optoelectronic characteristics as compared to contacts with basic metal electrodes. However, the highest rectification ratio was achieved up to ∼2.09 × 106 with the lowest ideality factor of ∼1.23. Moreover, the maximum change in photocurrent (Iph) is measured around 312 nA at Vds = 0.5 V. The device showed a high responsivity (R) of 4.7 × 104 m·AW-1, maximum external quantum efficiency (EQE) of 2.49 × 104 (%), and detectivity (D*) of 2.1 × 1011 Jones at wavelength λ = 220 nm. Further, we revealed the bipolar photoresponse mechanisms in WTe2-GaTe-ReSe2-WTe2 devices due to band alignment at the interface, which can be modified by applying different gate voltages. Hence, our promising results render heterocontact engineering of the GaTe-ReSe2 heterostructured diode as an excellent candidate for next-generation optoelectronic logic and neuromorphic computing.

Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTe2thin film for infrared detection

In the field of electronic and optoelectronic applications, two-dimensional materials are found to be promising candidates for futuristic devices. For the detection of infrared (IR) light, MoTe2possesses an appropriate bandgap for which p-MoTe2/n-Si heterojunctions are well suited for photodetectors. In this study, a rapid thermal technique is used to grow MoTe2thin films on silicon (Si) substrates. Molybdenum (Mo) thin films are deposited using a sputtering system on the Si substrate and tellurium (Te) film is deposited on the Mo film by a thermal evaporation technique. The substrates with Mo/Te thin films are kept in a face-to-face manner inside the rapid thermal-processing furnace. The growth is carried out at a base pressure of 2 torr with a flow of 160 sccm of argon gas at different temperatures ranging from 400 °C to 700 °C. The x-ray diffraction peaks appear around 2θ= 12.8°, 25.5°, 39.2°, and 53.2° corresponding to (002), (004), (006), and (008) orientation of a hexagonal 2H-MoTe2structure. The characteristic Raman peaks of MoTe2, observed at ∼119 cm-1and ∼172 cm-1, correspond to the in-plane E1gand out-of-plane A1gmodes of MoTe2, whereas the prominent peaks of the in-plane E12gmode at ∼234 cm-1and the out-of-plane B12gmode at ∼289 cm-1are also observed. Root mean square (RMS) roughness is found to increase with increasing growth temperature. The bandgap of MoTe2is calculated using a Tauc plot and is found to be 0.90 eV. Electrical characterizations are carried out using current-voltage and current-time measurement, where the maximum responsivity and detectivity are found to be 127.37 mA W-1and 85.21 × 107Jones for a growth temperature of 600 °C and an IR wavelength illumination of 1060 nm.

Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect Transistors

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) offer advantages over traditional silicon in future electronics but are hampered by the prominent high contact resistance of metal-TMD interfaces, especially for p-type TMDs. Here, we present high-performance p-type MoTe2 field-effect transistors via a nondestructive van der Waals (vdW) transfer process, establishing low contact resistance between the 2D MoTe2 semiconductor and the PtTe2 semimetal. The integration of PtTe2 as contacts in MoTe2 field-effect transistors leads to significantly improved electrical characteristics compared to conventional metal contacts, evidenced by a mobility increase to 80 cm2 V-1 s-1, an on-state current rise to 5.0 μA/μm, and a reduction in Schottky barrier height (SBH) to 48 meV. Such a low SBH in quasi-van der Waals contacts can be assigned to the low electrical resistivity of PtTe2 and the high efficiency of carrier injection at the 2D semimetal/2D semiconductor interfaces. Imaging via transmission electron microscopy reveals that the 2D semimetal/two-dimensional semiconductor interfaces are atomically flat and exceptionally clean. This interface engineering strategy could enable low-resistance contacts based on vdW architectures in a facile manner, providing opportunities for 2D materials for next-generation optoelectronics and electronics.

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p-type 2D single-crystalline 2H-MoTe2 transistor arrays with Fermi-level-tuned 1T'-phase semimetal contact electrodes. By transforming polycrystalline 1T'-MoTe2 to 2H polymorph via abnormal grain growth, we fabricated 4-inch 2H-MoTe2 wafers with ultra-large single-crystalline domains and spatially-controlled single-crystalline arrays at a low temperature (~500 °C). Furthermore, we demonstrate on-chip transistors by lithographic patterning and layer-by-layer integration of 1T' semimetals and 2H semiconductors. Work function modulation of 1T'-MoTe2 electrodes was achieved by depositing 3D metal (Au) pads, resulting in minimal contact resistance (~0.7 kΩ·μm) and near-zero Schottky barrier height (~14 meV) of the junction interface, and leading to high on-state current (~7.8 μA/μm) and on/off current ratio (~105) in the 2H-MoTe2 transistors.

Revealing Resistive Switching Mechanism in CaFeOx Perovskite System with Electroforming-Free and Reset Voltage-Controlled Multilevel Resistance Characteristics

Recently, perovskite (PV) oxides with ABO₃ structures have attracted considerable interest from scientists owing to their functionality. In this study, CaFeO_x is introduced to reveal the resistive switching properties and mechanism of oxygen vacancy transition in PV and brownmillerite (BM) structures. BM-CaFeO_2.5 is grown on an Nb-STO conductive substrate epitaxially. CaFeO_x exhibits excellent endurance and reliability. In addition, the CaFeO_x also demonstrates an electroforming-free characteristic and multilevel resistance properties. To construct the switching mechanism, high-resolution transmission electron microscopy is used to observe the topotactic phase change in CaFeO_x . In addition, scanning TEM and electron energy loss spectroscopy show the structural evolution and valence state variation of CaFeO_x after the switching behavior. This study not only reveals the switching mechanism of CaFeO_x , but also provides a PV oxide option for the dielectric material in resistive random-access memory (RRAM) devices.

Investigation of Phase Segregation in p-Type Bi0.5Sb1.5Te3 Thermoelectric Alloys by In Situ Melt Spinning to Determine Possible Carrier Filtering Effect

One means of enhancing the performance of thermoelectric materials is to generate secondary nanoprecipitates of metallic or semiconducting properties in a thermoelectric matrix, to form proper band bending and, in turn, to induce a low-energy carrier filtering effect. However, forming nanocomposites is challenging, and proper band bending relationships with secondary phases are largely unknown. Herein, we investigate the in situ phase segregation behavior during melt spinning with various metal elements, including Ti, V, Nb, Mo, W, Ni, Pd, and Cu, in p-type Bi0.5Sb1.5Te3 (BST) thermoelectric alloys. The results showed that various metal chalcogenides were formed, which were related to the added metal elements as secondary phases. The electrical conductivity, Seebeck coefficient, and thermal conductivity of the BST composite with various secondary phases were measured and compared with those of pristine BST alloys. Possible band alignments with the secondary phases are introduced, which could be utilized for further investigation of a possible carrier filtering effect when forming nanocomposites.

A reversible and stable doping technique to invert the carrier polarity of MoTe2

Two-dimensional (2D) materials can be implemented in several functional devices for future optoelectronics and electronics applications. Remarkably, recent research on p-n diodes by stacking 2D materials in heterostructures or homostructures (out of plane) has been carried out extensively with novel designs that are impossible with conventional bulk semiconductor materials. However, the insight of a lateral p-n diode through a single nanoflake based on 2D material needs attention to facilitate the miniaturization of device architectures with efficient performance. Here, we have established a physical carrier-type inversion technique to invert the polarity of MoTe₂-based field-effect transistors (FETs) with deep ultraviolet (DUV) doping in (oxygen) O₂and (nitrogen) N₂gas environments. A p-type MoTe₂nanoflake transformed its polarity to n-type when irradiated under DUV illumination in an N₂gaseous atmosphere, and it returned to its original state once irradiated in an O₂gaseous environment. Further, Kelvin probe force microscopy (KPFM) measurements were employed to support our findings, where the value of the work function changed from ∼4.8 and ∼4.5 eV when p-type MoTe₂inverted to the n-type, respectively. Also, using this approach, an in-plane homogeneous p-n junction was formed and achieved a diode rectifying ratio (I_f/I_r) up to ∼3.8 × 10⁴. This effective approach for carrier-type inversion may play an important role in the advancement of functional devices.

NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe2 heterojunction diode

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe2 van der waal heterojunction (vdW HJ). A substantial increase in rectification behavior was observed when the devices were subjected to gate bias. The highest rectification of ~ 1 × 104 was obtained at Vg = - 40 V. Remarkable rectification behavior of the p-n diode is solely attributed to the sharp interface between metal and GeSe/MoSe2. The device exhibits a high photoresponse towards NIR (850 nm). A high photoresponsivity of 465 mAW-1, an excellent EQE of 670%, a fast rise time of 180 ms, and a decay time of 360 ms were obtained. Furthermore, the diode exhibits detectivity (D) of 7.3 × 109 Jones, the normalized photocurrent to the dark current ratio (NPDR) of 1.9 × 1010 W-1, and the noise equivalent power (NEP) of 1.22 × 10-13 WHz-1/2. The strong light-matter interaction stipulates that the GeSe/MoSe2 diode may open new realms in multi-functional electronics and optoelectronics applications.

WSe2 Homojunction p-n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride

A single nanoflake lateral p-n diode (in-plane) based on a two-dimensional material can facilitate electronic architecture miniaturization. Here, a novel lateral homojunction p-n diode of a single WSe₂ nanoflake is fabricated by photoinduced doping via optical excitation of defect states in an h-BN nanoflake upon illumination. This lateral diode is fabricated using a mechanical exfoliation technique by stacking the WSe₂ nanoflake partially on the h-BN and Si substrates. The carrier type in the part of the WSe₂ film on the h-BN substrate is inverted and a built-in potential difference is formed, ranging from 5.0 to 4.50 eV, which is measured by Kelvin probe force microscopy. The contact potential difference across the junction of p-WSe₂ and n-WSe₂ is found to be ∼492 mV. The lateral diode shows an excellent rectification ratio, up to ∼3.9 × 10⁴, with an ideality factor of ∼1.1. A typical self-biased photovoltaic behavior is observed at the p-n junction upon the illumination of incident light, that is, a positive open-circuit voltage (V_oc) is generated, that is, voltage obtained (at I_ds = 0 V), and also a negative short-circuit current (I_sc) is generated, that is, current obtained (at V_ds = 0 V). The presence of built-in potential in the proposed homojunction diode establishes I_sc and V_oc upon illumination, which can be implemented for a self-powered photovoltaic system in future electronics. The proposed doping technique can be effectively applied to form planar homojunction devices without a photoresist for future electronic and optoelectronic applications.

Carrier polarity modulation of molybdenum ditelluride (MoTe2) for phototransistor and switching photodiode applications

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) are layered semiconductor materials that have recently emerged as promising candidates for advanced nano- and photoelectronic applications. Previously, various doping methods, such as surface functionalization, chemical doping, substitutional doping, surface charge transfer, and electrostatic doping, have been introduced, but they are not stable or efficient. In this study, we have developed carrier polarity modulation of molybdenum ditelluride (MoTe₂) for the development of phototransistors and switching photodiodes. Initially, we treated p-MoTe₂ in a N₂ environment under DUV irradiation and found that the p-type MoTe₂ changed to n-type MoTe₂. However, the treated devices exhibited environmental stability over a long period of 60 days. Kelvin probe force microscopy (KPFM) measurements demonstrated that the values of the work function for p-MoTe₂ and n-MoTe₂ were ∼4.90 and ∼4.49 eV, respectively, which confirmed the carrier tunability. Also, first-principles studies were performed to confirm the n-type carrier polarity variation. Interestingly, the n-type MoTe₂ reversed its polarity to p-type after the irradiation of the devices under DUV in an O₂ environment. Additionally, a lateral homojunction-based p-n diode of MoTe₂ with a rectification ratio of ∼2.5 × 10⁴ was formed with the value of contact potential difference of ∼400 mV and an estimated fast rise time of 29 ms and decay time of 38 ms. Furthermore, a well self-biased photovoltaic behavior upon illumination of light was achieved and various photovoltaic parameters were examined. Also, V_OC switching behavior was established at the p-n diode state by switching on and off the incident light. We believe that this efficient and facile carrier polarity modulation technique may pave the way for the development of phototransistors and switching photodiodes in advanced nanotechnology.

Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

2D layered germanium selenide (GeSe) with p-type conductivity is incorporated with asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed and an efficient photodetector. The photoresponse under photovoltaic effect is investigated for the wavelengths of light (i.e. ~220, ~530 and ~850 nm). The device exhibited promising figures of merit required for efficient photodetection, specifically the Schottky barrier diode is highly sensitive to NIR light irradiation at zero voltage with good reproducibility, which is promising for the emergency application of fire detection and night vision. The high responsivity, detectivity, normalized photocurrent to dark current ratio (NPDR), noise equivalent power (NEP) and response time for illumination of light (~850 nm) are calculated to be 280 mA/W, 4.1 × 10⁹ Jones, 3 × 10⁷ W⁻¹, 9.1 × 10⁻¹² WHz^−1/2 and 69 ms respectively. The obtained results suggested that p-GeSe is a novel candidate for SBD optoelectronics-based technologies.

Controlled Plasma Thinning of Bulk MoS2 Flakes for Photodetector Fabrication

The electronic properties of layered materials are directly determined based on their thicknesses. Remarkable progress has been carried out on synthesis of wafer-scale atomically molybdenum disulfide (MoS2) layers as a two-dimensional material in the past few years in order to transform them into commercial products. Although chemical/mechanical exfoliation techniques are used to obtain a high-quality monolayer of MoS2, the lack of suitable control in the thickness and the lateral size of the flakes restrict their benefits. As a result, a straightforward, effective, and reliable approach is widely demanded to achieve a large-area MoS2 flake with control in its thickness for optoelectronic applications. In this study, thick MoS2 flakes are obtained by a short-time bath sonication in dimethylformamide solvent, which are thinned with the aid of a sequential plasma etching process using H2, O2, and SF6 plasma. A comprehensive study has been carried out on MoS2 flakes based on scanning electron microscopy, atomic force microscopy, Raman, transmission electron microscopy, and X-ray photoelectron microscopy measurements, which ultimately leads to a two-cycle plasma thinning method. In this approach, H2 is used in the passivation step in the first subcycle, and O2/SF6 plasma acts as an etching step for removing the MoS2 layers in the second subcycle. Finally, we show that this technique can be enthusiastically used to fabricate MoS2-based photodetectors with a considerable photoresponsivity of 1.39 A/W and a response time of 0.45 s under laser excitation of 532 nm.