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Yu M, Xun W, Dong Y, Gu H, Zhong JL, Ren J, Hao X, Wu YZ. Anisotropic optical property of ferroelectric Bi 2O 2X(X = S,Se,Te) monolayer and strain engineering. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:335302. [PMID: 38740061 DOI: 10.1088/1361-648x/ad4add] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Accepted: 05/13/2024] [Indexed: 05/16/2024]
Abstract
Based on the first-principles calculations, ferroelectricBi2O2X(X=S,Se,Te)monolayers with unequivalent in-plane lattice constants are confirmed to be the ground state, which is consistent with the experiment result (Ghoshet al2019Nano Lett.195703-09), and the anisotropic optical property is firstly investigated. We find that the polarizations ofBi2O2Xmonolayers points along the direction ofa-axis, andBi2O2Temonolayer process the largest polarization. Furthermore, both the biaxial and uniaxial strains are favor for the enhancement of polarization ofBi2O2Xmonolayers. It should be mentioned that the type of band gap will convert from indirect to direct forBi2O2Temonolayer when thea-axial tensile strain is larger than 2%. At last, the optical absorption coefficient forBi2O2Xmonolayers are calculated, and we obtain thatBi2O2Temonolayer has the strongest optical absorption within the range of visible light, the anisotropy and possible strain engineering to improve the optical absorption are discussed in detail. Our findings are significant in fields of optoelectronics and photovoltaics.
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Affiliation(s)
- Miao Yu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Wei Xun
- School of Electrical Engineering, Jiangsu Vocational College of Electronics and Information, Huaian 223003, People's Republic of China
| | - Yaojun Dong
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, People's Republic of China
| | - Han Gu
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, People's Republic of China
| | - Jia-Lin Zhong
- School of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
- Semiconductor Sensor and Microelectronic system TEKISM United Laboratory, Suzhou 215009, People's Republic of China
| | - Jie Ren
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, People's Republic of China
| | - Xiang Hao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Yin-Zhong Wu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
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Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
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Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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3
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Song P, Li X, Cui J, Chen K, Chu Y. Investigation on the Impact of Excitation Amplitude on AFM-TM Microcantilever Beam System's Dynamic Characteristics and Implementation of an Equivalent Circuit. SENSORS (BASEL, SWITZERLAND) 2023; 24:107. [PMID: 38202969 PMCID: PMC10781406 DOI: 10.3390/s24010107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 12/18/2023] [Accepted: 12/23/2023] [Indexed: 01/12/2024]
Abstract
Alterations in the dynamical properties of an atomic force microscope microcantilever beam system in tapping mode can appreciably impact its measurement precision. Understanding the influence mechanism of dynamic parameter changes on the system's motion characteristics is vital to improve the accuracy of the atomic force microscope in tapping mode (AFM-TM). In this study, we categorize the mathematical model of the AFM-TM microcantilever beam system into systems 1 and 2 based on actual working conditions. Then, we analyze the alterations in the dynamic properties of both systems due to external excitation variations using bifurcation diagrams, phase trajectories, Lyapunov indices, and attraction domains. The numerical simulation results show that when the dimensionless external excitation g < 0.183, the motion state of system 2 is period 1. When g < 0.9, the motion state of system 1 is period 1 motion. Finally, we develop the equivalent circuit model of the AFM-TM microcantilever beam and perform related software simulations, along with practical circuit experiments. Our experimental results indicate that the constructed equivalent circuit can effectively analyze the dynamic characteristics of the AFM-TM microcantilever beam system in the presence of complex external environmental factors. It is observed that the practical circuit simulation attenuates high-frequency signals, resulting in a 31.4% reduction in excitation amplitude compared to numerical simulation results. This provides an essential theoretical foundation for selecting external excitation parameters for AFM-TM cantilever beams and offers a novel method for analyzing the dynamics of micro- and nanomechanical systems, as well as other nonlinear systems.
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Affiliation(s)
- Peijie Song
- School of Electrical Engineering. Lanzhou Jiaotong University, Lanzhou 730070, China;
- Gansu Institute of Metrology, Lanzhou 730050, China
| | - Xiaojuan Li
- Gansu Institute of Metrology, Lanzhou 730050, China
| | - Jianjun Cui
- Geometric Sciences Institute, National Institute of Metrology, Beijing 100013, China; (J.C.)
| | - Kai Chen
- Geometric Sciences Institute, National Institute of Metrology, Beijing 100013, China; (J.C.)
| | - Yandong Chu
- School of Electrical Engineering. Lanzhou Jiaotong University, Lanzhou 730070, China;
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4
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Yao CJ, Xun W, Yu M, Hao X, Zhong JL, Gu H, Wu YZ. Tailoring angle dependent ferroelectricity in nanoribbons of group-IV monochalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:495301. [PMID: 37652037 DOI: 10.1088/1361-648x/acf5ba] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Accepted: 08/31/2023] [Indexed: 09/02/2023]
Abstract
Ferroelectricity is significant in low dimensional structures due to the potential applications in multifunctional nanodevices. In this work, the tailoring angle dependent ferroelectricity is systematically investigated for the nanoribbons and nanowires of puckered group-IV monochalcogenides MX (M =Ge,Sn; X =S,Se). Based on first-principles calculations, it is found that the ferroelectricity of nanoribbon and nanowire strongly depends on the tailoring angle. Firstly, the critical width for the bare nanoribbon of group-IV monochalcogenide is obtained and discussed. As the nanowires are concerned, the ferroelectricity will disappear when the tailoring angle becomes small. At last, H-passivation on the edge and the strain engineering are employed to improve the ferroelectricity of nanoribbon, and it is obtained that H-passivation is beneficial to the enhancement of polarization for nanoribbons tailored near the armchair direction, while the polarization of nanoribbons tailored along the diagonal direction will decrease when the edges are passivated with H atoms, and the tensile strain along the length direction always favors the improvement of ferroelectricity of the considered nanoribbons. Therefore, tailoring angle has great influence on the ferroelectricity of nanoribbons and nanowires, which may be used as an effective way to tune the ferroelectricity and further the electronic structures of nanostructures in the field of nanoelectronics.
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Affiliation(s)
- Cheng-Jun Yao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Wei Xun
- Faculty of Electronic Information Engineering, Huaiyin Institute of Technology, Huaian 223003, People's Republic of China
| | - Miao Yu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Xiang Hao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Jia-Lin Zhong
- School of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
- Semiconductor Sensor and Microelectronic System TEKISM United Laboratory, Suzhou 215009, People's Republic of China
| | - Han Gu
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, People's Republic of China
| | - Yin-Zhong Wu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, and School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
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5
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Zhang K, Wang X, Mi W. Spin-splitting and switchable half-metallicity in a van der Waals multiferroic CuBiP 2Se 6/GdClBr heterojunction. Phys Chem Chem Phys 2023. [PMID: 37449502 DOI: 10.1039/d3cp02466k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
Multiferroic van der Waals (vdW) heterojunctions have a strong and nonvolatile magnetoelectric coupling effect, which is of great significance in spintronic devices. The electronic structure and magnetic properties of a GdClBr/CuBiP2Se6 vdW multiferroic heterojunction have been calculated using first-principles methods. Due to the spin-up charge transfer and Zeeman field, the ferroelectric CuBiP2Se6 exhibits spin splitting at the gamma point. It is found that the electronic structure and magnetic properties of the GdClBr/CuBiP2Se6 vdW multiferroic heterojunction have been significantly modulated by the electric polarization of CuBiP2Se6. During the reversal of the ferroelectric polarization of CuBiP2Se6, the ferromagnetic GdClBr monolayer transforms from a semiconductor to a half-metal. Meanwhile, in both upward and downward ferroelectric polarization, the GdClBr/CuBiP2Se6 heterojunction exhibits perpendicular magnetic anisotropy with a Curie temperature of 239 K. As the strain changes from -6% to 6%, the band structure of GdClBr shifts upward, and the band structure of CuBiP2Se6 shifts downward. Compressive strain can increase the Curie temperature of the GdClBr/CuBiP2Se6 heterojunction. The magnetic anisotropy of heterojunctions highly depends on biaxial strain, where the perpendicular (in-plane) magnetic anisotropy increases with the increased compressive (tensile) strain. The vdW multiferroic GdClBr/CuBiP2Se6 heterojunction has potential applications in spintronic devices.
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Affiliation(s)
- Kai Zhang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
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6
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Continuously tunable ferroelectric domain width down to the single-atomic limit in bismuth tellurite. Nat Commun 2022; 13:5903. [PMID: 36202850 PMCID: PMC9537171 DOI: 10.1038/s41467-022-33617-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2022] [Accepted: 09/26/2022] [Indexed: 11/08/2022] Open
Abstract
Emerging functionalities in two-dimensional materials, such as ferromagnetism, superconductivity and ferroelectricity, open new avenues for promising nanoelectronic applications. Here, we report the discovery of intrinsic in-plane room-temperature ferroelectricity in two-dimensional Bi2TeO5 grown by chemical vapor deposition, where spontaneous polarization originates from Bi column displacements. We found an intercalated buffer layer consist of mixed Bi/Te column as 180° domain wall which enables facile polarized domain engineering, including continuously tunable domain width by pinning different concentration of buffer layers, and even ferroelectric-antiferroelectric phase transition when the polarization unit is pinned down to single atomic column. More interestingly, the intercalated Bi/Te buffer layer can interconvert to polarized Bi columns which end up with series terraced domain walls and unusual fan-shaped ferroelectric domain. The buffer layer induced size and shape tunable ferroelectric domain in two-dimensional Bi2TeO5 offer insights into the manipulation of functionalities in van der Waals materials for future nanoelectronics. Tunability of ferroelectric domain structure is significant in ferroelectric materials. Here, the authors present in-plane ferroelectricity in 2D Bi2TeO5 in which the ferroelectric domain size and shape can be continuously tuned by the Bi/Te ratio.
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7
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Corletto A, Ellis AV, Shepelin NA, Fronzi M, Winkler DA, Shapter JG, Sherrell PC. Energy Interplay in Materials: Unlocking Next-Generation Synchronous Multisource Energy Conversion with Layered 2D Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203849. [PMID: 35918607 DOI: 10.1002/adma.202203849] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 06/06/2022] [Indexed: 06/15/2023]
Abstract
Layered 2D crystals have unique properties and rich chemical and electronic diversity, with over 6000 2D crystals known and, in principle, millions of different stacked hybrid 2D crystals accessible. This diversity provides unique combinations of properties that can profoundly affect the future of energy conversion and harvesting devices. Notably, this includes catalysts, photovoltaics, superconductors, solar-fuel generators, and piezoelectric devices that will receive broad commercial uptake in the near future. However, the unique properties of layered 2D crystals are not limited to individual applications and they can achieve exceptional performance in multiple energy conversion applications synchronously. This synchronous multisource energy conversion (SMEC) has yet to be fully realized but offers a real game-changer in how devices will be produced and utilized in the future. This perspective highlights the energy interplay in materials and its impact on energy conversion, how SMEC devices can be realized, particularly through layered 2D crystals, and provides a vision of the future of effective environmental energy harvesting devices with layered 2D crystals.
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Affiliation(s)
- Alexander Corletto
- Department of Chemical Engineering, The University of Melbourne, Grattan Street, Parkville, Victoria, 3010, Australia
| | - Amanda V Ellis
- Department of Chemical Engineering, The University of Melbourne, Grattan Street, Parkville, Victoria, 3010, Australia
| | - Nick A Shepelin
- Laboratory for Multiscale Materials Experiments, Paul Scherrer Institute, Forschungsstrasse 111, Villigen, CH-5232, Switzerland
| | - Marco Fronzi
- School of Mathematical and Physical Science, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - David A Winkler
- Monash Institute of Pharmaceutical Sciences, Monash University, 381 Royal Parade, Parkville, Victoria, 3052, Australia
- School of Biochemistry and Chemistry, La Trobe Institute for Molecular Science, La Trobe University, Kingsbury Drive, Bundoora, Victoria, 3086, Australia
- School of Pharmacy, The University of Nottingham, Nottingham, NG7 2RD, UK
| | - Joseph G Shapter
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Peter C Sherrell
- Department of Chemical Engineering, The University of Melbourne, Grattan Street, Parkville, Victoria, 3010, Australia
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8
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Neumayer SM, Zhao Z, O'Hara A, McGuire MA, Susner MA, Pantelides ST, Maksymovych P, Balke N. Nanoscale Control of Polar Surface Phases in Layered van der Waals CuInP 2S 6. ACS NANO 2022; 16:2452-2460. [PMID: 35129970 DOI: 10.1021/acsnano.1c08970] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Antiferroelectric (AFE) materials, in which alternating dipole moments cancel out to a zero net macroscopic polarization, can be used for high-density energy storage and memory applications. The AFE phase can exist in bulk CuInP2Se6, CuBiP2S6, and a few other transition-metal thiophosphates below 200 K. The required low temperature poses challenges for practical applications. In this work, we report the coexistence of ferrielectric (FE) states and a stable surface phase that does not show piezoelectric response ("zero-response phase") in bulk CuInP2S6 at room temperature. Using piezoresponse force microscopy (PFM) tomographic imaging together with density functional theory, we find that direct and alternating voltages can locally and stably convert FE to zero-response phases and vice versa. While PFM loops show pinched hystereses reminiscent of antiferroelectricity, PFM tomography reveals that the zero-response areas form only on top of the FE phase in which the polarization vector is pointing up. Theoretical calculations suggest that the zero-response phase may correspond to AFE ordering where stacked CuInP2S6 layers have alternating polarization orientations thereby leading to a net-zero polarization. Consistent with experimental findings, theory predicts that the FE polarization pointing down is robust up to the top surface, whereas FE polarization pointing up energetically favors the formation of an AFE surface layer, whose thickness is likely to be sensitive to local strains. AFE order is likely to be more robust against detrimental size effects than polar order, therefore providing additional opportunities to create multifunctional heterostructures with 2D electronic materials.
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Affiliation(s)
- Sabine M Neumayer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Zhenghang Zhao
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Andrew O'Hara
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Michael A McGuire
- Materials Science and Technology Division, Oak Ridge, Tennessee 37831, United States
| | - Michael A Susner
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433, United States
| | - Sokrates T Pantelides
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
- Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Petro Maksymovych
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Nina Balke
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907, United States
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9
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Guan Z, Zhao Y, Wang X, Zhong N, Deng X, Zheng Y, Wang J, Xu D, Ma R, Yue F, Cheng Y, Huang R, Xiang P, Wei Z, Chu J, Duan C. Electric-Field-Induced Room-Temperature Antiferroelectric-Ferroelectric Phase Transition in van der Waals Layered GeSe. ACS NANO 2022; 16:1308-1317. [PMID: 34978807 DOI: 10.1021/acsnano.1c09183] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Searching van der Waals ferroic materials that can work under ambient conditions is of critical importance for developing ferroic devices at the two-dimensional limit. Here we report the experimental discovery of electric-field-induced reversible antiferroelectric (AFE) to ferroelectric (FE) transition at room temperature in van der Waals layered α-GeSe, employing Raman spectroscopy, transmission electron microscopy, second-harmonic generation, and piezoelectric force microscopy consolidated by first-principles calculations. An orientation-dependent AFE-FE transition provides strong evidence that the in-plane (IP) polarization vector aligns along the armchair rather than zigzag direction in α-GeSe. In addition, temperature-dependent Raman spectra showed that the IP polarization could sustain up to higher than 700 K. Our findings suggest that α-GeSe, which is also a potential ferrovalley material, could be a robust building block for creating artificial 2D multiferroics at room temperature.
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Affiliation(s)
- Zhao Guan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yifeng Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yunzhe Zheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Jinjin Wang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Dongdong Xu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Ruru Ma
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Pinghua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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10
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Sherrell PC, Fronzi M, Shepelin NA, Corletto A, Winkler DA, Ford M, Shapter JG, Ellis AV. A bright future for engineering piezoelectric 2D crystals. Chem Soc Rev 2021; 51:650-671. [PMID: 34931635 DOI: 10.1039/d1cs00844g] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
The piezoelectric effect, mechanical-to-electrical and electrical-to-mechanical energy conversion, is highly beneficial for functional and responsive electronic devices. To fully exploit this property, miniaturization of piezoelectric materials is the subject of intense research. Indeed, select atomically thin 2D materials strongly exhibit the piezoelectric effect. The family of 2D crystals consists of over 7000 chemically distinct members that can be further manipulated in terms of strain, functionalization, elemental substitution (i.e. Janus 2D crystals), and defect engineering to induce a piezoelectric response. Additionally, most 2D crystals can stack with other similar or dissimilar 2D crystals to form a much greater number of complex 2D heterostructures whose properties are quite different to those of the individual constituents. The unprecedented flexibility in tailoring 2D crystal properties, coupled with their minimal thickness, make these emerging highly attractive for advanced piezoelectric applications that include pressure sensing, piezocatalysis, piezotronics, and energy harvesting. This review summarizes literature on piezoelectricity, particularly out-of-plane piezoelectricity, in the vast family of 2D materials as well as their heterostructures. It also describes methods to induce, enhance, and control the piezoelectric properties. The volume of data and role of machine learning in predicting piezoelectricity is discussed in detail, and a prospective outlook on the 2D piezoelectric field is provided.
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Affiliation(s)
- Peter C Sherrell
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria, 3010, Australia.
| | - Marco Fronzi
- School of Mathematical and Physical Science, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia.,Shibaura Institute of Technology, SIT Research Laboratories, 3-7-5, Toyosu, Koto-ku, Tokyo, 135-8548, Japan.
| | - Nick A Shepelin
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria, 3010, Australia. .,Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Alexander Corletto
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria, 3010, Australia. .,Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - David A Winkler
- Monash Institute of Pharmaceutical Sciences, Monash University, 381 Royal Parade, Parkville, Victoria 3052, Australia.,School of Biochemistry and Genetics, La Trobe Institute for Molecular Science, La Trobe University, Kingsbury Drive, Bundoora, Victoria 3086, Australia.,School of Pharmacy, The University of Nottingham, Nottingham NG7 2RD, UK
| | - Mike Ford
- School of Mathematical and Physical Science, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Joseph G Shapter
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Amanda V Ellis
- Department of Chemical Engineering, The University of Melbourne, Parkville, Victoria, 3010, Australia.
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11
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Fu L, Wang X, Mi W. Spin‐Dependent Electronic Structure and Magnetic Properties of 2D JANUS Mn
2
CFCl/CuBiP
2
Se
6
Van Der Waals Multiferroic Heterostructures. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100302] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Luqian Fu
- Tianjin Key Laboratory of Film Electronic & Communicate Devices School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin 300384 China
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin 300384 China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology School of Science Tianjin University Tianjin 300354 China
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12
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Fan Y, Song X, Ai H, Li W, Zhao M. Highly Efficient Photocatalytic CO 2 Reduction in Two-Dimensional Ferroelectric CuInP 2S 6 Bilayers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:34486-34494. [PMID: 34282882 DOI: 10.1021/acsami.1c10983] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Photocatalytic CO2 conversion into reproducible chemical fuels (e.g., CO, CH3OH, or CH4) provides a promising scheme to solve the increasing environmental problems and energy demands simultaneously. However, the efficiency is severely restricted by the high overpotential of the CO2 reduction reaction (CO2RR) and rapid recombination of photoexcited carriers. Here, we propose that a novel type-II photocatalytic mechanism based on two-dimensional (2D) ferroelectric multilayers would be ideal for addressing these issues. Using density-functional theory and nonadiabatic molecular dynamics calculations, we find that the ferroelectric CuInP2S6 bilayers exhibit a staggered band structure induced by the vertical intrinsic electric fields. Different from the traditional type-II band alignment, the unique structure of the CuInP2S6 bilayer not only effectively suppresses the recombination of photogenerated electron-hole (e-h) pairs but also produces a sufficient photovoltage to drive the CO2RR. The predicted recombination time of photogenerated e-h pairs, 1.03 ns, is much longer than the transferring times of photoinduced electrons and holes, 5.45 and 0.27 ps, respectively. Moreover, the overpotential of the CO2RR will decrease by substituting an S atom with a Cu atom, making the redox reaction proceed spontaneously under solar radiation. The solar-to-fuel efficiency with an upper limit of 8.40% is achieved in the CuInP2S6 bilayer and can be further improved to 32.57% for the CuInP2S6 five-layer. Our results indicate that this novel type-II photocatalytic mechanism would be a promising way to achieve highly efficient photocatalytic CO2 conversion based on the 2D ferroelectric multilayers.
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Affiliation(s)
- Yingcai Fan
- School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiaohan Song
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Haoqiang Ai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Weifeng Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Mingwen Zhao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
- School of Physics and Electrical Engineering, Kashgar University, Kashi 844006, China
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13
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Xu C, Chen Y, Cai X, Meingast A, Guo X, Wang F, Lin Z, Lo TW, Maunders C, Lazar S, Wang N, Lei D, Chai Y, Zhai T, Luo X, Zhu Y. Two-Dimensional Antiferroelectricity in Nanostripe-Ordered In_{2}Se_{3}. PHYSICAL REVIEW LETTERS 2020; 125:047601. [PMID: 32794817 DOI: 10.1103/physrevlett.125.047601] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2019] [Revised: 03/14/2020] [Accepted: 06/17/2020] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) layered materials have been an exciting frontier for exploring emerging physics at reduced dimensionality, with a variety of exotic properties demonstrated at 2D limit. Here, we report the first experimental discovery of in-plane antiferroelectricity in a 2D material β^{'}-In_{2}Se_{3}, using optical and electron microscopy consolidated by first-principles calculations. Different from conventional 3D antiferroelectricity, antiferroelectricity in β^{'}-In_{2}Se_{3} is confined within the 2D layer and generates the unusual nanostripe ordering: the individual nanostripes exhibit local ferroelectric polarization, whereas the neighboring nanostripes are antipolar with zero net polarization. Such a unique superstructure is underpinned by the intriguing competition between 2D ferroelectric and antiferroelectric ordering in β^{'}-In_{2}Se_{3}, which can be preserved down to single-layer thickness as predicted by calculation. Besides demonstrating 2D antiferroelectricity, our finding further resolves the true nature of the β^{'}-In_{2}Se_{3} superstructure that has been under debate for over four decades.
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Affiliation(s)
- Chao Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
| | - Yancong Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiangbin Cai
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Arno Meingast
- Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands
| | - Xuyun Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
| | - Fakun Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Ziyuan Lin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
| | - Tsz Wing Lo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
| | - Christian Maunders
- Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands
| | - Sorin Lazar
- Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China
| | - Dangyuan Lei
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xin Luo
- State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Ye Zhu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China
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14
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Sun Z, Huang H, Xun W, Shi S, Hao X, Ju S, Wu Y. First-principle study of sulfur vacancy and O 2adsorption on the electronic and optical properties of ferroelectric CuInP 2S 6monolayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:335001. [PMID: 32268301 DOI: 10.1088/1361-648x/ab87d0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2020] [Accepted: 04/08/2020] [Indexed: 06/11/2023]
Abstract
Sulfur vacancy in MoS2has been found to have an important influence on the performance of optoelectronic devices. Here, we study the effect of sulfur vacancy and O2adsorption on the electronic and optical properties in the two-dimensional ferroelectric CuInP2S6. It is revealed that a defect state appears at the top of valence band with the presence of sulfur vacancy. However, when O2is chemisorbed at sulfur vacancy, the defect state disappears. The variation of charge state and charge transfer are calculated and discussed. Although the ferroelectricity is greatly suppressed with the presence of sulfur vacancy, the ferroelectric state can be recovered when the O2is adsorbed. Within the framework of GW + BSE method, the optical absorption edge of CuInP2S6monolayer exhibits a red-shift for the presence of sulfur vacancy and further O2adsorption gives rise to a blue-shift of the spectrum. Our findings have shown an effective way to improve the functionality of two-dimensional ferroelectrics via defect engineering.
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Affiliation(s)
- Zhizheng Sun
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application and School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Hongfei Huang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application and School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Wei Xun
- School of Physical Science and Technology, Soochow University, Suzhou 215006, People's Republic of China
| | - Shanjin Shi
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application and School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Xiang Hao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application and School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
| | - Sheng Ju
- School of Physical Science and Technology, Soochow University, Suzhou 215006, People's Republic of China
| | - Yinzhong Wu
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application and School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, People's Republic of China
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15
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Shen S, Liu C, Ma Y, Huang B, Dai Y. Robust two-dimensional ferroelectricity in single-layer γ-SbP and γ-SbAs. NANOSCALE 2019; 11:11864-11871. [PMID: 31184668 DOI: 10.1039/c9nr02265a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Currently, two-dimensional ferroelectricity has attracted considerable attention due to its fascinating properties and promising applications. Herein, by means of first-principles calculations, we propose a series of excellent ferroelectric materials, single-layer γ-SbX (X = As, P). Both systems exhibit excellent 2D ferroelectricity with an in-plane spontaneous polarization around 3.80 × 10-10 C m-1 (γ-SbAs) and 3.47 × 10-10 C m-1 (γ-SbP). More importantly, the ferroelectricity of SL γ-SbAs (γ-SbP) has been maintained well at 700 K (600 K), much higher than room temperature. These properties indicate that SL γ-SbX are robust ferroelectric materials, which could be promising for nonvolatile memory devices and nanoscale electronics. The Landau theory is employed to explain the mechanism of the ferroelectric phase transition, which provides a better understanding of the universal critical properties of 2D materials.
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Affiliation(s)
- Shiying Shen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
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16
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Li M, Reimers JR, Dobson JF, Gould T. Faraday cage screening reveals intrinsic aspects of the van der Waals attraction. Proc Natl Acad Sci U S A 2018; 115:E10295-E10302. [PMID: 30327347 PMCID: PMC6217410 DOI: 10.1073/pnas.1811569115] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/03/2022] Open
Abstract
General properties of the recently observed screening of the van der Waals (vdW) attraction between a silica substrate and silica tip by insertion of graphene are predicted using basic theory and first-principles calculations. Results are then focused on possible practical applications, as well as an understanding of the nature of vdW attraction, considering recent discoveries showing it competing against covalent and ionic bonding. The traditional view of the vdW attraction as arising from pairwise-additive London dispersion forces is considered using Grimme's "D3" method, comparing results to those from Tkatchenko's more general many-body dispersion (MBD) approach, all interpreted in terms of Dobson's general dispersion framework. Encompassing the experimental results, MBD screening of the vdW force between two silica bilayers is shown to scale up to medium separations as 1.25 de/d, where d is the bilayer separation and de is its equilibrium value, depicting antiscreening approaching and inside de Means of unifying this correlation effect with those included in modern density functionals are urgently required.
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Affiliation(s)
- Musen Li
- International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
- Department of Physics, Shanghai University, Shanghai 200444, China
| | - Jeffrey R Reimers
- International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China;
- Department of Physics, Shanghai University, Shanghai 200444, China
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - John F Dobson
- School of Natural Sciences, Griffith University, Nathan, QLD 4111, Australia
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
| | - Tim Gould
- School of Natural Sciences, Griffith University, Nathan, QLD 4111, Australia;
- Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia
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