Nano-confinement of block copolymers in high accuracy topographical guiding patterns: modelling the emergence of defectivity due to incommensurability

Extreme ultraviolet lithography reaches 5 nm resolution

Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high numerical aperture (high NA) EUV scanners. Hitherto, EUV interference lithography (EUV-IL) utilizing transmission gratings has been a powerful patterning tool for the early development of EUV resists and related processes, playing a key role in exploring and pushing the boundaries of photon-based lithography. However, achieving patterning with HPs well below 10 nm using this method presents significant challenges. In response, this study introduces a novel EUV-IL setup that employs mirror-based technology and circumvents the limitations of diffraction efficiency towards the diffraction limit that is inherent in conventional grating-based approaches. The results are line/space patterning of the HSQ resist down to HP 5 nm using the standard EUV wavelength 13.5 nm, and the compatibility of the tool with shorter wavelengths beyond EUV. Mirror-based interference lithography paves the way towards the ultimate photon-based resolution at EUV wavelengths and beyond. This advancement is vital for scientific and industrial research, addressing the increasingly challenging needs of nanoscience and technology and future technology nodes of CMOS manufacturing in the few-nanometer HP regime.

Advances in lithographic techniques for precision nanostructure fabrication in biomedical applications

Nano-fabrication techniques have demonstrated their vital importance in technological innovation. However, low-throughput, high-cost and intrinsic resolution limits pose significant restrictions, it is, therefore, paramount to continue improving existing methods as well as developing new techniques to overcome these challenges. This is particularly applicable within the area of biomedical research, which focuses on sensing, increasingly at the point-of-care, as a way to improve patient outcomes. Within this context, this review focuses on the latest advances in the main emerging patterning methods including the two-photon, stereo, electrohydrodynamic, near-field electrospinning-assisted, magneto, magnetorheological drawing, nanoimprint, capillary force, nanosphere, edge, nano transfer printing and block copolymer lithographic technologies for micro- and nanofabrication. Emerging methods enabling structural and chemical nano fabrication are categorised along with prospective chemical and physical patterning techniques. Established lithographic techniques are briefly outlined and the novel lithographic technologies are compared to these, summarising the specific advantages and shortfalls alongside the current lateral resolution limits and the amenability to mass production, evaluated in terms of process scalability and cost. Particular attention is drawn to the potential breakthrough application areas, predominantly within biomedical studies, laying the platform for the tangible paths towards the adoption of alternative developing lithographic technologies or their combination with the established patterning techniques, which depends on the needs of the end-user including, for instance, tolerance of inherent limits, fidelity and reproducibility.

Preparation and characteristic analysis of nanofacula array

The development of nanofacula array is an effective methods to improve the performance of Near-field Scanning Optical Microscopy (NSOM) and achieve high-throughput array scanning. The nanofacula array is realized by preparing metal nanopore array through the "two etching-one development" method of double-layer resists and the negative lift-off process after metal film coating. The shading property of metal film plays important rules in nanofacula array fabrication. We investigate the shading coefficient of three kinds of metal films (gold–palladium alloy (Au/Pd), platinum (Pt), chromium (Cr)) under different coating times, and 3.5 min Au/Pd film is determined as the candidate of the nanofacula array fabrication for its lower thickness (about 23 nm) and higher shading coefficient (≥ 90%). The nanofacula array is obtained by irradiating with white light (central wavelength of 500 nm) through the metal nanopore array (250/450 nm pore diameter, 2 μm pore spacing and 7 μm group spacing). Moreover, the finite difference and time domain (FDTD) simulation proves that the combination of nanopore array and microlens array achieves high-energy focused nanofacula array, which shows a 3.2 times enhancement of electric field. It provides a new idea for NSOM to realize fast super-resolution focusing facula array.

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

Self-assembly of block copolymers under non-isothermal annealing conditions as revealed by grazing-incidence small-angle X-ray scattering

An accurate knowledge of the parameters governing the kinetics of block copolymer self-assembly is crucial to model the time- and temperature-dependent evolution of pattern formation during annealing as well as to predict the most efficient conditions for the formation of defect-free patterns. Here, the self-assembly kinetics of a lamellar PS-b-PMMA block copolymer under both isothermal and non-isothermal annealing conditions are investigated by combining grazing-incidence small-angle X-ray scattering (GISAXS) experiments with a novel modelling methodology that accounts for the annealing history of the block copolymer film before it reaches the isothermal regime. Such a model allows conventional studies in isothermal annealing conditions to be extended to the more realistic case of non-isothermal annealing and prediction of the accuracy in the determination of the relevant parameters, namely the correlation length and the growth exponent, which define the kinetics of the self-assembly.

Grain-Boundary-Induced Alignment of Block Copolymer Thin Films

We present and discuss the capability of grain boundaries to induce order in block copolymer thin films between horizontally and vertically assembled block copolymer grains. The system we use as a proof of principle is a thermally annealed 23.4 nm full-pitch lamellar Polystyrene-block-polymethylmetacrylate (PS-b-PMMA) di-block copolymer. In this paper, grain-boundary-induced alignment is achieved by the mechanical removal of the neutral brush layer via atomic force microscopy (AFM). The concept is also confirmed by a mask-less e-beam direct writing process. An elongated grain of vertically aligned lamellae is trapped between two grains of horizontally aligned lamellae. This configuration leads to the formation of 90° twist grain boundaries. The features maintain their orientation on a characteristic length scale, which is described by the material's correlation length ξ. As a result of an energy minimization process, the block copolymer domains in the vertically aligned grain orient perpendicularly to the grain boundary. The energy-minimizing feature is the grain boundary itself. The width of the manipulated area (e.g., the horizontally aligned grain) does not represent a critical process parameter.

Fast, quantitative and high resolution mapping of viscoelastic properties with bimodal AFM

Quantitative mapping of viscoelastic properties of soft matter with a nanoscale spatial resolution is an active and relevant research topic in atomic force microscopy (AFM) and nanoscale science characterization. The AFM has demonstrated its accuracy to measure the energy dissipated on a sample surface with an atomic-scale resolution. However, the transformation of energy dissipation values associated with viscoelastic interactions to a material property remains very challenging. A key issue is to establish the relationship between the AFM observables and some material properties such as viscosity coefficient or relaxation time. Another relevant issue is to determine the accuracy of the measurements. We demonstrate that bimodal atomic force microscopy enables the accurate measurement of several viscoelastic parameters such as the Young's modulus, viscosity coefficient, retardation time or loss tangent. The parameters mentioned above are measured at the same time that the true topography. We demonstrate that the loss tangent is proportional to the viscosity coefficient. We show that the mapping of viscoelastic properties neither degrades the spatial resolution nor the imaging speed of AFM. The results are presented for homogeneous polymer and block co-polymer samples with Young's modulus, viscosity and retardation times ranging from 100 MPa to 3 GPa, 10 to 400 Pa s and 50 to 400 ns, respectively. Numerical simulations validate the accuracy of bimodal AFM to determine the viscoelastic parameters.