Thermoelectric properties of the tetrahedrite-tennantite solid solutions Cu12Sb4-xAsxS13 and Cu10Co2Sb4-yAsyS13 (0 ≤ x, y ≤ 4)

A novel bifunctional thioarsenate based on unprecedented molecular [Cd4As8Se16(Se2)2]8- cluster anions

Exploring and developing new functional inorganic chalcogenides with unique structures is always one of the most important missions in solid-state chemistry, especially those with molecular structures. Herein, a novel quaternary thioarsenate, Cs2CdAsSe5, is found to be based on an unprecedented molecular (poly)chalcogenide cluster architecture, which has never been discovered in inorganic chalcogenide systems. This rare windmill-like [Cd4As8Se16(Se2)2]8- cluster is made of four [CdSe4] and [As(V)Se4] tetrahedra via corner-sharing Se atoms and Se-Se bonds. Specifically, Cs2CdAsSe5 exhibits a remarkable photocurrent response and a large computationally predicted birefringence, and the origin of the optoelectronic performance and optical anisotropy is confirmed by detailed theoretical investigation.

Copper-Arsenic-Sulfide Thin-Films from Local Raw Materials Deposited via RF Co-Sputtering for Photovoltaics

The inexorable increase of energy demand and the efficiency bottleneck of monocrystalline silicon solar cell technology is promoting the research and development of alternative photovoltaic materials. Copper-arsenic-sulfide (CAS) compounds are still rather unexplored in the literature, yet they have been regarded as promising candidates for use as p-type absorber in solar cells, owing to their broad raw material availability, suitable bandgap and high absorption coefficient. Here, a comprehensive study is presented on the structural and optoelectronic properties of CAS thin-films deposited via radio-frequency magnetron co-sputtering, using a commercial Cu target together with a Cu-As-S target with material obtained from local resources, specifically from mines in the Portuguese region of the Iberian Pyrite Belt. Raman and X-ray diffraction analysis confirm that the use of two targets results in films with pronounced stoichiometry gradients, suggesting a transition from amorphous CAS compounds to crystalline djurleite (Cu₃₁S₁₆), with the increasing proximity to the Cu target. Resistivity values from 4.7 mΩ·cm to 17.4 Ω·cm are obtained, being the lowest resistive films, those with pronounced sub-bandgap free-carrier absorption. The bandgap values range from 2.20 to 2.65 eV, indicating promising application as wide-bandgap semiconductors in third-generation (e.g., multi-junction) photovoltaic devices.

Phase Analysis and Thermoelectric Properties of Cu-Rich Tetrahedrite Prepared by Solvothermal Synthesis

Because of the large Seebeck coefficient, low thermal conductivity, and earth-abundant nature of components, tetrahedrites are promising thermoelectric materials. DFT calculations reveal that the additional copper atoms in Cu-rich Cu₁₄Sb₄S₁₃ tetrahedrite can effectively engineer the chemical potential towards high thermoelectric performance. Here, the Cu-rich tetrahedrite phase was prepared using a novel approach, which is based on the solvothermal method and piperazine serving both as solvent and reagent. As only pure elements were used for the synthesis, the offered method allows us to avoid the typically observed inorganic salt contaminations in products. Prepared in such a way, Cu₁₄Sb₄S₁₃ tetrahedrite materials possess a very high Seebeck coefficient (above 400 μVK⁻¹) and low thermal conductivity (below 0.3 Wm⁻¹K⁻¹), yielding to an excellent dimensionless thermoelectric figure of merit ZT ≈ 0.65 at 723 K. The further enhancement of the thermoelectric performance is expected after attuning the carrier concentration to the optimal value for achieving the highest possible power factor in this system.

Cs3CuAs4Q8 (Q = S, Se): unique two-dimensional layered inorganic thioarsenates with the lowest Cu-to-As ratio and remarkable photocurrent responses

Inorganic chalcogenides containing cations with lone-pair electrons have attracted considerable attention because of their potential applications in photocatalysis. In this research, two new copper thioarsenates with the lowest Cu-to-As ratio in the quaternary X/Cu/As/Q (X = inorganic cations; Q = chalcogen) system, namely Cs₃CuAs₄Q₈ (Q = S, Se), were obtained by a simple surfactant-thermal method at a low temperature. These two isostructural compounds belong to the monoclinic space group C2/c (no. 15) and are composed charge-balanced Cs⁺ cations and two-dimensional anionic [CuAs₄Q₈]^3- layers. Notably, photo-electrochemical measurements indicate that Cs₃CuAs₄Q₈ possesses a remarkable photocurrent response under simulated solar-light illumination. Further theoretical studies were performed to gain insights into the relationships between electronic structure and optical properties.

Improved Thermoelectric Performance of Cu12Sb4S13 through Gd-Substitution Induced Enhancement of Electronic Density of States and Phonon Scattering

Cu₁₂Sb₄S₁₃ has aroused great interest because of its earth-abundant constituents and intrinsic low thermal conductivity. However, the applications of Cu₁₂Sb₄S₁₃ are hindered by its poor thermoelectric performance. Herein, it is shown that Gd substitution not only causes a significant increase in both electrical conductivity σ and thermopower S but also leads to dramatic drop in lattice thermal conductivity κ_L. Consequently, large ZT reaches 0.94 at 749 K for Cu_11.7Gd_0.3Sb₄S₁₃, which is ∼41% higher than the ZT value of undoped sample. Rietveld refinements of XRD results show that accompanying inhibition of impurity phase Cu₃SbS₄, the number of Cu vacancies increases substantially with substituted content x (x ≤ 0.3), which leads to reduced κ_L owing to intensive phonon scattering by the point defects and increased σ arising from the charged defects (V_Cu^'). Crucially, synchrotron radiation photoelectron spectroscopy reveals substantial increment of electronic density of states at Fermi level upon Gd substitution, which is proven, by our first-principle calculations, to originate from contribution of Gd 4f orbit, resulting in enhancement of S. Our study provides us with a new path to enhance thermoelectric performance of Cu₁₂Sb₄S₁₃.