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Liu H, Huang Z, Qiao H, Qi X. Characteristics and performance of layered two-dimensional materials under doping engineering. Phys Chem Chem Phys 2024; 26:17423-17442. [PMID: 38869477 DOI: 10.1039/d4cp01261e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
In recent years, doping engineering, which is widely studied in theoretical and experimental research, is an effective means to regulate the crystal structure and physical properties of two-dimensional materials and expand their application potential. Based on different types of element dopings, different 2D materials show different properties and applications. In this paper, the characteristics and performance of rich layered 2D materials under different types of doped elements are comprehensively reviewed. Firstly, 2D materials are classified according to their crystal structures. Secondly, conventional experimental methods of charge doping and heterogeneous atom substitution doping are summarized. Finally, on the basis of various theoretical research results, the properties of several typical 2D material representatives under charge doping and different kinds of atom substitution doping as well as the inspiration and expansion of doping systems for the development of related fields are discussed. Through this review, researchers can fully understand and grasp the regulation rules of different doping engineering on the properties of layered 2D materials with different crystal structures. It provides theoretical guidance for further improving and optimizing the physical properties of 2D materials, improving and enriching the relevant experimental research and device application development.
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Affiliation(s)
- Huating Liu
- School of Electrical and Electronic Engineering, Wuhan Polytechnic University, Wuhan 430023, China.
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, 411105, China.
| | - Zongyu Huang
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, 411105, China.
| | - Hui Qiao
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, 411105, China.
| | - Xiang Qi
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, 411105, China.
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2
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Han K, Guo D, Han Y, Zhao P, Liang Y, Wang Q. A strategy for boosting photovoltaic performance based on a two-dimensional ZrSSe/HfSSe van der Waals heterostructure. Phys Chem Chem Phys 2024; 26:8539-8546. [PMID: 38412426 DOI: 10.1039/d3cp06247c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/29/2024]
Abstract
Identifying high-efficiency solar photovoltaic systems with two-dimensional (2D) materials is still an urgent challenge to meet modern energy requirements. Very recently, a 2D heterostructure with type-II band alignment has been confirmed to be more favorable for application in photoelectric conversion. However, the staggered band offset of 2D type-II heterostructures cannot always be guaranteed, nor the intrinsic hindrance mechanism of carrier recombination being clear. In this study, taking the emerging ZrSSe/HfSSe van der Waals heterostructure (vdWH) as a generic example, a boosting strategy for improving the photoelectric performances of 2D vdWHs is proposed. Through a series of in-depth systematic research studies based on first-principles, we demonstrate that via applying a vertical strain, an anticipated band alignment transition from type-I to favorable type-II of this ZrSSe/HfSSe vdWH can be induced due to the interfacial charge redistribution, during which a corresponding enlarged photocurrent can be detected from the latter based device compared to the former. Essentially, such enhanced photocurrent at the incident photon energy (Eph) around the band gap is attributed to the suppressed recombination rate of photoexcited carriers. Moreover, when Eph is increased into the visible light region, the photoelectric conversion performances can be further controlled by vertical strain. These generalized findings not only provide an effective manipulation strategy for enhancing the performances of 2D solar photovoltaic systems, but the intrinsic physical mechanism can also be extended to the next practical design and regulation of other 2D photovoltaic devices.
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Affiliation(s)
- Keying Han
- State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China.
| | - Defeng Guo
- State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China.
| | - Yuxin Han
- State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China.
| | - Pei Zhao
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Songling Road 238, Qingdao 266100, People's Republic of China.
| | - Yan Liang
- College of Physics and Optoelectronic Engineering, Faculty of Information Science and Engineering, Ocean University of China, Songling Road 238, Qingdao 266100, People's Republic of China.
| | - Qiang Wang
- State Key Laboratory of Metastable Materials Science and Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China.
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3
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Price CJ, Baker EAD, Hepplestone SP. Properties of Layered TMDC Superlattices for Electrodes in Li-Ion and Mg-Ion Batteries. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:1867-1876. [PMID: 38352854 PMCID: PMC10860140 DOI: 10.1021/acs.jpcc.3c05155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 01/04/2024] [Accepted: 01/05/2024] [Indexed: 02/16/2024]
Abstract
In this work, we present a first-principles investigation of the properties of superlattices made from transition metal dichalcogenides for use as electrodes in lithium-ion and magnesium-ion batteries. From a study of 50 pairings, we show that, in general, the volumetric expansion, intercalation voltages, and thermodynamic stability of vdW superlattice structures can be well approximated with the average value of the equivalent property for the component layers. We also found that the band gap can be reduced, improving the conductivity. Thus, we conclude that superlattice construction can be used to improve material properties through the tuning of intercalation voltages toward specific values and by increasing the stability of conversion-susceptible materials. For example, we demonstrate how pairing SnS2 with systems such as MoS2 can change it from a conversion to an intercalation material, thus opening it up for use in intercalation electrodes.
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Affiliation(s)
- Conor Jason Price
- Department of Physics, University
of Exeter, Stocker Road, Exeter EX4
4QL, U.K.
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Liu Z, Tee SY, Guan G, Han MY. Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications. NANO-MICRO LETTERS 2024; 16:95. [PMID: 38261169 PMCID: PMC10805767 DOI: 10.1007/s40820-023-01315-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Accepted: 11/30/2023] [Indexed: 01/24/2024]
Abstract
Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.
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Affiliation(s)
- Zhaosu Liu
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China
| | - Si Yin Tee
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| | - Guijian Guan
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
| | - Ming-Yong Han
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
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Zhang RS, Yin XL, Zhang YL, Jiang JW. The effect of intrinsic strain on the thermal expansion behavior of Janus MoSSe nanotubes: a molecular dynamic simulation. NANOTECHNOLOGY 2023; 35:075705. [PMID: 37976546 DOI: 10.1088/1361-6528/ad0dcb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 11/17/2023] [Indexed: 11/19/2023]
Abstract
In this study, we conducted molecular dynamic simulations to investigate the thermal expansion behavior of Janus MoSSe nanotubes. We focused on understanding how the intrinsic strain in these nanotubes affects their thermal expansion coefficient (TEC). Interestingly, we found that Janus MoSSe nanotubes with sulfur (S) on the outer surface (MoSeS) exhibit a different intrinsic strain compared to those with selenium (Se) on the outer surface (MoSSe). In light of this observation, we explored the influence of this intrinsic strain on the TEC of the nanotubes. Our results revealed distinct trends for the TEC along the radial direction (TEC-r) and the axial direction (TEC-lx) of the MoSSe and MoSeS nanotubes. The TEC-rof MoSeS nanotubes was found to be significantly greater than that of MoSSe nanotubes. Moreover, the TEC-lxof MoSeS nanotubes was smaller than that of MoSSe nanotubes. Further analysis showed that the TEC-rof MoSeS nanotubes decreased by up to 37% as the radius increased, while that of MoSSe nanotubes exhibited a slight increase with increasing radius. On the other hand, the TEC-lxof MoSeS nanotubes increased by as much as 45% with increasing radius, whereas that of MoSSe nanotubes decreased gradually. These opposite tendencies of the TECs with respect to the radius were attributed to the presence of intrinsic strain within the nanotubes. The intrinsic strain was found to play a crucial role in inducing thermally induced bending and elliptization of the nanotubes' cross-section. These effects are considered key mechanisms through which intrinsic strain influences the TEC. Overall, our study provides valuable insights into the thermal stability of Janus nanotubes. By understanding the relationship between intrinsic strain and the thermal expansion behavior of nanotubes, we contribute to the broader understanding of these materials and their potential applications.
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Affiliation(s)
- Run-Sen Zhang
- College of Mechanical and Electrical Engineering, Hebei Agricultural University, Baoding, Hebei, 071001, People's Republic of China
| | - Xiang-Lei Yin
- College of Mechanical and Electrical Engineering, Hebei Agricultural University, Baoding, Hebei, 071001, People's Republic of China
| | - Yu-Long Zhang
- College of Mechanical and Electrical Engineering, Hebei Agricultural University, Baoding, Hebei, 071001, People's Republic of China
| | - Jin-Wu Jiang
- Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, School of Mechanics and Engineering Science, Shanghai University, Shanghai 200072, People's Republic of China
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6
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Sun C, Zheng J, Zhang S, Zhao P, Guo P, Jiang Z. Key phonon modes to determine the phase transition of two dimensional Janus transition metal dichalcogenides: a DFT and tight-binding study. Phys Chem Chem Phys 2023; 25:31098-31106. [PMID: 37947158 DOI: 10.1039/d3cp03534d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Phase stability and the phase transition of Janus transition metal chalcogenides (TMDs) have become interesting issues that have not been fully resolved since their successful synthesis. By fitting the results from first principles calculations, a tight-binding dynamics matrix of the 1T' phase is constructed and the eigenvectors are also obtained. We propose a method to project the atomic motion causing the phase transition from 2H to 1T' onto these eigenvectors, and identify four key phonon modes which are the major factors to trigger phase transition. Temperature excitation is used to excite the key modes and the free energy criterion is used to determine the phase stability. The relatively large enthalpy difference between the 2H and 1T' phases favours the 2H one as the stable phase at low temperature. While the 1T' phase has a quick increase in vibrational free energy with rising temperature, especially for 1T' Janus TMDs which have a quicker increase in the total free energy than that of 1T' non-Janus TMDs, making them show a lower phase transition temperature. Our work will deepen our understanding of the phase transition behavior of 2D Janus TMDs, and the tight-binding dynamics matrix and the method to obtain the key modes will be a useful tool for further study of the phase transitions of 2D Janus TMDs and other related materials.
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Affiliation(s)
- Chengyue Sun
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710069, China.
| | - Jiming Zheng
- National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base) in Shaanxi Province, Northwest University, Xi'an 710069, China.
| | - Sujuan Zhang
- National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base) in Shaanxi Province, Northwest University, Xi'an 710069, China.
| | - Puju Zhao
- Department of Physics, Northwest University, Xi'an 710069, China
| | - Ping Guo
- Department of Physics, Northwest University, Xi'an 710069, China
| | - Zhenyi Jiang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710069, China.
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7
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Gul SH, Alrebdi TA, Idrees M, Amin B. Tunable electronic structures, Rashba splitting, and optical and photocatalytic responses of MSSe-PtO 2 (M = Mo, W) van der Waals heterostructures. NANOSCALE ADVANCES 2023; 5:5829-5837. [PMID: 37881719 PMCID: PMC10597551 DOI: 10.1039/d3na00347g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/21/2023] [Accepted: 08/23/2023] [Indexed: 10/27/2023]
Abstract
Binding energies, AIMD simulation and phonon spectra confirm both the thermal and dynamical stabilities of model-I and model-II of MSSe-PtO2 (M = Mo, W) vdWHs. An indirect type-II band alignment in both the models of MSSe-PtO2 vdWHs and a larger Rashba spin splitting in model-II than in model-I provide a platform for experimental design of MSSe-PtO2 vdWHs for optoelectronics and spintronic device applications. Transfer of electrons from the MSSe layer to the PtO2 layer at the interface of MSSe-PtO2 vdWHs makes MSSe (PtO2) p(n)-type. Large absorption in the visible region of MoSSe-PtO2 vdWHs, while blue shifts in WSSe-PtO2 vdWHs are observed. In the case of model-II of MSSe-PtO2 vdWHs, a further blue shift is observed. Furthermore, the photocatalytic response shows that MSSe-PtO2 vdWHs cross the standard water redox potentials confirming their capability to split water into H+/H2 and O2/H2O.
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Affiliation(s)
- Sadia H Gul
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan +92-333-943-665 +92-333-943-665
| | - Tahani A Alrebdi
- Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University PO Box 84428 Riyadh 11671 Saudi Arabia
| | - M Idrees
- School of Physics and Electronic Engineering, Jiangsu University Zhenjiang 212013 Jiangsu China
| | - B Amin
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan +92-333-943-665 +92-333-943-665
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Schmeink J, Musytschuk V, Pollmann E, Sleziona S, Maas A, Kratzer P, Schleberger M. Evaluating strain and doping of Janus MoSSe from phonon mode shifts supported by ab initio DFT calculations. NANOSCALE 2023; 15:10834-10841. [PMID: 37335022 DOI: 10.1039/d3nr01978k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Abstract
With the study of Janus monolayer transition metal dichalcogenides, in which one of the two chalcogen layers is replaced by another type of chalcogen atom, research on two-dimensional materials is advancing into new areas. Yet only little is known about this new kind of material class, mainly due to the difficult synthesis. In this work, we synthesize MoSSe monolayers from exfoliated samples and compare their Raman signatures with density functional theory calculations of phonon modes that depend in a nontrivial way on doping and strain. With this as a tool, we can infer limits for the possible combinations of strain and doping levels. This reference data can be applied to all MoSSe Janus samples in order to quickly estimate their strain and doping, providing a reliable tool for future work. In order to narrow down the results for our samples further, we analyze the temperature-dependent photoluminescence spectra and time-correlated single-photon counting measurements. The lifetime of Janus MoSSe monolayers exhibits two decay processes with an average total lifetime of 1.57 ns. Moreover, we find a strong trion contribution to the photoluminescence spectra at low temperature which we attribute to excess charge carriers, corroborating our ab initio calculations.
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Affiliation(s)
- Jennifer Schmeink
- University of Duisburg-Essen, Faculty of Physics and CENIDE, 47057 Duisburg, Germany.
| | - Vladislav Musytschuk
- University of Duisburg-Essen, Faculty of Physics and CENIDE, 47057 Duisburg, Germany.
| | - Erik Pollmann
- University of Duisburg-Essen, Faculty of Physics and CENIDE, 47057 Duisburg, Germany.
| | - Stephan Sleziona
- University of Duisburg-Essen, Faculty of Physics and CENIDE, 47057 Duisburg, Germany.
| | - André Maas
- University of Duisburg-Essen, Faculty of Physics and CENIDE, 47057 Duisburg, Germany.
| | - Peter Kratzer
- University of Duisburg-Essen, Faculty of Physics and CENIDE, 47057 Duisburg, Germany.
| | - Marika Schleberger
- University of Duisburg-Essen, Faculty of Physics and CENIDE, 47057 Duisburg, Germany.
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Suzuki H, Liu Y, Misawa M, Nakano C, Wang Y, Nakano R, Ishimura K, Tsuruta K, Hayashi Y. Intermediate State between MoSe 2 and Janus MoSeS during Atomic Substitution Process. NANO LETTERS 2023; 23:4533-4540. [PMID: 37155295 DOI: 10.1021/acs.nanolett.3c00972] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Janus transition metal dichalcogenides (TMDCs), with dissimilar chalcogen atoms on each side of TMDCs, have garnered considerable research attention because of the out-of-plane intrinsic polarization in monolayer TMDCs. Although a plasma process has been proposed for synthesizing Janus TMDCs based on the atomic substitution of surface atoms at room temperature, the formation dynamics and intermediate electronic states have not been completely examined. In this study, we investigated the intermediate state between MoSe2 and Janus MoSeS during plasma processing. Atomic composition analysis and atomic-scale structural observations revealed the intermediate partially substituted Janus (PSJ) structure. Combined with theoretical calculations, we successfully clarified the characteristic Raman modes in the intermediate PSJ structure. The PL exhibited discontinuous transitions that could not be explained by the theoretical calculations. These findings will contribute toward understanding the formation process and electronic-state modulation of Janus TMDCs.
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Affiliation(s)
- Hiroo Suzuki
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yijun Liu
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Masaaki Misawa
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Chiyu Nakano
- Advanced Science Research Center, Okayama University, Okayama 700-8530, Japan
| | - Yingzhe Wang
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Ryo Nakano
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kentaro Ishimura
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Kenji Tsuruta
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
| | - Yasuhiko Hayashi
- Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
- Faculty of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
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10
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Sanyal G, Kaur SP, Rout CS, Chakraborty B. Defect-Engineering of 2D Dichalcogenide VSe 2 to Enhance Ammonia Sensing: Acumens from DFT Calculations. BIOSENSORS 2023; 13:257. [PMID: 36832023 PMCID: PMC9954586 DOI: 10.3390/bios13020257] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/04/2022] [Revised: 02/07/2023] [Accepted: 02/10/2023] [Indexed: 06/18/2023]
Abstract
Opportune sensing of ammonia (NH3) gas is industrially important for avoiding hazards. With the advent of nanostructured 2D materials, it is felt vital to miniaturize the detector architecture so as to attain more and more efficacy with simultaneous cost reduction. Adaptation of layered transition metal dichalcogenide as the host may be a potential answer to such challenges. The current study presents a theoretical in-depth analysis regarding improvement in efficient detection of NH3 using layered vanadium di-selenide (VSe2) with the introduction of point defects. The poor affinity between VSe2 and NH3 forbids the use of the former in the nano-sensing device's fabrications. The adsorption and electronic properties of VSe2 nanomaterials can be tuned with defect induction, which would modulate the sensing properties. The introduction of Se vacancy to pristine VSe2 was found to cause about an eight-fold increase (from -012 eV to -0.97 eV) in adsorption energy. A charge transfer from the N 2p orbital of NH3 to the V 3d orbital of VSe2 has been observed to cause appreciable NH3 detection by VSe2. In addition to that, the stability of the best-defected system has been confirmed through molecular dynamics simulation, and the possibility of repeated usability has been analyzed for calculating recovery time. Our theoretical results clearly indicate that Se-vacant layered VSe2 can be an efficient NH3 sensor if practically produced in the future. The presented results will thus potentially be useful for experimentalists in designing and developing VSe2-based NH3 sensors.
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Affiliation(s)
- Gopal Sanyal
- Mechanical Metallurgy Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
| | - Surinder Pal Kaur
- Department of Chemistry, Indian Institute of Technology Ropar, Rupnagar 140001, India
| | - Chandra Sekhar Rout
- Centre for Nano and Material Sciences, Jain Global Campus, Jakkasandra, Ramanagaram, Bangalore 562112, India
| | - Brahmananda Chakraborty
- High Pressure and Synchroton Radiation Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
- Homi Bhabha National Institute, Mumbai 400094, India
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11
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Bashir K, Bilal M, Amin B, Chen Y, Idrees M. Structural, electronic and thermoelectric properties of GeC and MXO (M = Ti, Zr and X = S, Se) monolayers and their van der Waals heterostructures. RSC Adv 2023; 13:9624-9635. [PMID: 36968037 PMCID: PMC10037300 DOI: 10.1039/d2ra07797c] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 01/13/2023] [Indexed: 03/26/2023] Open
Abstract
Vertical stacking of two-dimensional materials into layered van der Waals heterostructures is considered favourable for nanoelectronics and thermoelectric applications. In this work, we investigate the structural, electronic and thermoelectric properties of GeC and Janus monolayers MXO (M = Ti, Zr; X = S, Se) and their van der Waals (vdW) heterostructures using first-principles calculations. The values of binding energies, interlayer distances and thermal stability confirm the stability of these vdW heterostructures. The calculated band structure shows that GeC monolayer have a direct band gap while MXO (M = Ti, Zr; X = S, Se) and their van der Waals heterostructures show indirect band nature. Partial density of states confirms the type-II band alignment of GeC–MXY vdW heterostructures. Our results shows that ZrSeO (GeC) monolayers and GeC–ZrSO vdW heterostructures have higher power factor, making them promising for thermoelectric device applications. Calculated Seebeck coefficient (a) and (b) electrical conductivity (c) and (d) and power factor (e) and (f) of GeC–TiSO, GeC–TiSeO, GeC–ZrSO and GeC–ZrSeO vdW heterostructures for 300 K and 800 K, respectively.![]()
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Affiliation(s)
- Khadeeja Bashir
- Department of Physics, Abbottabad University of Science and TechnologyHavelianAbbottabad 22010Pakistan
| | - M. Bilal
- Department of Physics, Abbottabad University of Science and TechnologyHavelianAbbottabad 22010Pakistan
| | - B. Amin
- Department of Physics, Abbottabad University of Science and TechnologyHavelianAbbottabad 22010Pakistan
| | - Yuanping Chen
- School of Physics and Electronic Engineering, Jiangsu UniversityZhenjiang212013JiangsuChina
| | - M. Idrees
- School of Physics and Electronic Engineering, Jiangsu UniversityZhenjiang212013JiangsuChina
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12
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Two-dimensional SiC/AlN based type-II van der Waals heterobilayer as a promising photocatalyst for overall water disassociation. Sci Rep 2022; 12:20106. [PMID: 36418922 PMCID: PMC9684528 DOI: 10.1038/s41598-022-24663-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Accepted: 11/18/2022] [Indexed: 11/24/2022] Open
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures made by vertical assembling of two different layers have drawn immense attention in the photocatalytic water disassociation process. Herein, we suggest a novel 2D/2D vdW heterobilayer consisting of silicon carbide (SiC) and aluminum nitride (AlN) as an exciting photocatalyst for solar-to-hydrogen conversion reactions using first-principles calculations. Notably, the heterostructure presents an inherent type-II band orientation wherein the photogenic holes and electrons are spatially separated in the SiC layer and the AlN layer, respectively. Our results indicate that the SiC/AlN heterostructure occupies a suitable band-gap of 2.97 eV which straddles the kinetic overpotentials of the hydrogen production reaction and oxygen production reaction. Importantly, the built-in electric field at the interface created by substantial charge transfer prohibits carrier recombination and further improves the photocatalytic performance. The heterostructure has an ample absorption profile ranging from the ultraviolet to the near-infrared regime, while the intensity of the absorption reaches up to 2.16 × 105 cm-1. In addition, external strain modulates the optical absorption of the heterostructure effectively. This work provides an intriguing insight into the important features of the SiC/AlN heterostructure and renders useful information on the experimental design of a novel vdW heterostructure for solar energy-driven water disassociation with superior efficiency.
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13
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Meftakhutdinov RM, Sibatov RT. Janus Type Monolayers of S-MoSiN 2 Family and Van Der Waals Heterostructures with Graphene: DFT-Based Study. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3904. [PMID: 36364680 PMCID: PMC9656724 DOI: 10.3390/nano12213904] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/29/2022] [Revised: 10/28/2022] [Accepted: 10/31/2022] [Indexed: 06/16/2023]
Abstract
Novel representative 2D materials of the Janus type family X-M-ZN2 are studied. These materials are hybrids of a transition metal dichalcogenide and a material from the MoSi2N4 family, and they were constructed and optimized from the MoSi2N4 monolayer by the substitution of SiN2 group on one side by chalcogen atoms (sulfur, selenium, or tellurium), and possibly replacing molybdenum (Mo) to tungsten (W) and/or silicon (Si) to germanium (Ge). The stability of novel materials is evaluated by calculating phonon spectra and binding energies. Mechanical, electronic, and optical characteristics are calculated by methods based on the density functional theory. All considered 2D materials are semiconductors with a substantial bandgap (>1 eV). The mirror symmetry breaking is the cause of a significant built-in electric field and intrinsic dipole moment. The spin−orbit coupling (SOC) is estimated by calculations of SOC polarized bandstructures for four most stable X-M-ZN2 structures. The possible van der Waals heterostructures of considered Janus type monolayers with graphene are constructed and optimized. It is demonstrated that monolayers can serve as outer plates in conducting layers (with graphene) for shielding a constant external electric field.
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Affiliation(s)
| | - Renat T. Sibatov
- Laboratory of Diffusion Processes, Ulyanovsk State University, 432017 Ulyanovsk, Russia
- Scientific-Manufacturing Complex “Technological Centre”, 124498 Moscow, Russia
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Ayele ST, Obodo KO, Asres GA. First-principles investigation of potential water-splitting photocatalysts and photovoltaic materials based on Janus transition-metal dichalcogenide/WSe 2 heterostructures. RSC Adv 2022; 12:31518-31524. [PMID: 36380918 PMCID: PMC9631714 DOI: 10.1039/d2ra04964c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 10/26/2022] [Indexed: 09/08/2024] Open
Abstract
Two-dimensional materials have been shown to exhibit exotic properties that make them very interesting for both photo-catalytic and photo-voltaic applications. In this study, van der Waals corrected density functional theory calculations were carried out on heterostructures of MoSSe/WSe2, WSSe/WSe2, and WSeTe/WSe2. The heterostructures are semiconductors with type II band alignments which are advantageous for electron-hole pair separation. The HSE06 level electronic band gap was found to be 1.093 eV, 1.427 eV and 1.603 eV for MoSSe/WSe2, WSSe/WSe2, and WSeTe/WSe2 respectively. We have considered eight high symmetry stacking patterns for each of the heterostructures, and among them the most stable stacking orders were ascertained based on the interlayer binding energies. The binding energies of the most stable MoSSe/WSe2, WSSe/WSe2, and WSeTe/WSe2 heterostructures were found to be -0.0604 eV, -0.1721 eV, and -0.3296 eV with an equilibrium interlayer space of 5.75 Å, 4.05 Å, and 4.76 Å respectively. The Power Conversion Efficiency (PCE) was found to be 20, 19.98, and 18.24 percent for the MoSSe/WSe2, WSSe/WSe2, and WSeTe/WSe2 heterostructures, respectively. The results show that they can serve as suitable photovoltaic materials with high efficiency, thus, opening the possibilities of developing solar cells based on 2D Janus/TMD heterostructures. The most stable heterostructures are also tested for photocatalytic water splitting applications and WSeTe/WSe2 shows excellent photocatalytic activity by being active for full water splitting at pH = 7 and pH = 14, the MoSSe/WSe2 heterostructure is good for the oxygen evolution reaction and WSSe/WSe2 is active for the hydrogen evolution reaction.
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Affiliation(s)
- Samuel Tilahun Ayele
- Center for Materials Engineering, Addis Ababa Institute of Technology, Addis Ababa University, School of Multi-disciplinary Engineering Addis Ababa 1000 Ethiopia +251 902639816
- Space Science and Geospatial Institute Addis Ababa Ethiopia
| | - Kingsley O Obodo
- HySA Infrastructure Centre of Competence, Faculty of Engineering, North-West University, South Africa (NWU) 2531 South Africa
- National Institute of Theoretical and Computational Sciences Johannesburg 2000 South Africa
| | - Georgies Alene Asres
- Center for Materials Engineering, Addis Ababa Institute of Technology, Addis Ababa University, School of Multi-disciplinary Engineering Addis Ababa 1000 Ethiopia +251 902639816
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Pang Q, Xin H, Chai R, Gao D, Zhao J, Xie Y, Song Y. In-Plane Strain Tuned Electronic and Optical Properties in Germanene-MoSSe Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3498. [PMID: 36234627 PMCID: PMC9565274 DOI: 10.3390/nano12193498] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Revised: 09/30/2022] [Accepted: 10/03/2022] [Indexed: 06/16/2023]
Abstract
DFT calculations are performed to investigate the electronic and optical absorption properties of two-dimensional heterostructures constructed by Janus MoSSe and germanene. It is found that a tiny gap can be opened up at the Dirac point in both Ge/SMoSe and Ge/SeMoS heterostructures, with intrinsic high-speed carrier mobility of the germanene layer being well preserved. An n-type Schottky contact is formed in Ge/SMoSe, while a p-type one is formed in Ge/SeMoS. Compared to corresponding individual layers, germanene-MoSSe heterostructures can exhibit extended optical absorption ability, ranging from ultraviolet to infrared light regions. The position of the Dirac cone, the Dirac gap value as well as the position of the optical absorption peak for both Ge/SMoSe and Ge/SeMoS heterostructures can be tuned by in-plane biaxial strains. It is also predicted that a Schottky-Ohmic transition can occur when suitable in-plane strain is imposed (especially tensile strain) on heterostructures. These results can provide a helpful guide for designing future nanoscale optoelectronic devices based on germanene-MoSSe vdW heterostructures.
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Affiliation(s)
- Qing Pang
- College of Science, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Hong Xin
- College of Science, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Ruipeng Chai
- College of Science, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Dangli Gao
- College of Science, Xi’an University of Architecture and Technology, Xi’an 710055, China
- Shaanxi Key Laboratory of Nano Materials and Technology, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - Jin Zhao
- College of Science, Xi’an University of Architecture and Technology, Xi’an 710055, China
| | - You Xie
- College of Science, Xi’an University of Science and Technology, Xi’an 710054, China
| | - Yuling Song
- College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China
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Martins Quintela MFC, Costa AT, Peres NMR. Excitonic instability in transition metal dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:455303. [PMID: 36063813 DOI: 10.1088/1361-648x/ac8f7d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 09/05/2022] [Indexed: 06/15/2023]
Abstract
When transition-metal dichalcogenide monolayers lack inversion symmetry, their low-energy single particle spectrum near some high-symmetry points can, in some cases, be described by tilted massive Dirac Hamiltonians. The so-called Janus materials fall into that category. Inversion symmetry can also be broken by the application of out-of-plane electric fields, or by the mere presence of a substrate. Here we explore the properties of excitons in TMDC monolayers lacking inversion symmetry. We find that exciton binding energies can be larger than the electronic band gap, making such materials promising candidates to host the elusive exciton insulator phase. We also investigate the excitonic contribution to their optical conductivity and discuss the associated optical selection rules.
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Affiliation(s)
- M F C Martins Quintela
- Department of Physics and Centre of Physics of the Universites of Minho and Porto (CF-UM-UP), Campus of Gualtar, 4710-057 Braga, Portugal
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
| | - A T Costa
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
| | - N M R Peres
- Department of Physics and Centre of Physics of the Universites of Minho and Porto (CF-UM-UP), Campus of Gualtar, 4710-057 Braga, Portugal
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
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Alrebdi TA, Idrees M, Alkallas F, Amin B. In-situ formation of Are-MXY(M = Mo, W; (X ≠ Y) = S, Se, Te) van der Waals heterostructure. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123284] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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19
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Alam Q, Sardar S, Din HU, Khan SA, Idrees M, Amin B, Rehman F, Muhammad S, Laref A. A first principles study of a van der Waals heterostructure based on MS 2 (M = Mo, W) and Janus CrSSe monolayers. NANOSCALE ADVANCES 2022; 4:3557-3565. [PMID: 36134356 PMCID: PMC9400489 DOI: 10.1039/d2na00298a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Accepted: 07/02/2022] [Indexed: 06/16/2023]
Abstract
The strategy of stacking two-dimensional materials for designing van der Waals heterostructures has gained tremendous attention in realizing innovative device applications in optoelectronics and renewable energy sources. Here, we performed the first principles calculations of the geometry, optoelectronic and photocatalytic performance of MS2-CrSSe (M = Mo, W) vdW heterostructures. The mirror asymmetry in the Janus CrSSe system allows the designing of two models of the MS2-CrSSe system by replacing S/Se atoms at opposite surfaces in CrSSe. The feasible configurations of both models of the MS2-CrSSe system are found energetically, dynamically and thermally stable. The studied heterobilayers possess an indirect type-I band alignment, indicating that the recombination of photogenerated electrons and holes in the CrSSe monolayer is hence crucial for photodetectors and laser applications. Remarkably, a red-shift in the optical absorption spectra of MS2-CrSSe makes them potential candidates for light harvesting applications. More interestingly, all heterobilayers (except W(Mo)S2-CrSSe of model-I(II)) reveal appropriate band edge positions of the oxidation and reduction potentials of the photocatalysis of water dissociation into H+/H2 and O2/H2O at pH = 0. These results shed light on the practical design of the MS2-CrSSe system for efficient optoelectronic and photocatalytic water splitting applications.
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Affiliation(s)
- Q Alam
- Department of Physics, Hazara University Mansehra KP Pakistan
| | - S Sardar
- Department of Physics, Hazara University Mansehra KP Pakistan
| | - H U Din
- Department of Physics, Bacha Khan University Charsadda KP Pakistan
| | - S A Khan
- Department of Physics, Hazara University Mansehra KP Pakistan
| | - M Idrees
- Department of Physics, Abbottabad University of Science & Technology Havelian Abbottabad KP Pakistan
| | - B Amin
- Department of Physics, Abbottabad University of Science & Technology Havelian Abbottabad KP Pakistan
| | - F Rehman
- Department of Physics, Khushal Khan Khattak University Karak KP Pakistan
| | - Saleh Muhammad
- Department of Physics, Hazara University Mansehra KP Pakistan
| | - A Laref
- Department of Physics and Astronomy, College of Science, King Saud University Riyadh 11451 Saudi Arabia
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20
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Strasser A, Wang H, Qian X. Nonlinear Optical and Photocurrent Responses in Janus MoSSe Monolayer and MoS 2-MoSSe van der Waals Heterostructure. NANO LETTERS 2022; 22:4145-4152. [PMID: 35532538 DOI: 10.1021/acs.nanolett.2c00898] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides are promising materials platforms for a variety of optoelectronic device applications. Janus 2D materials are a rising class of 2D materials with low symmetry, which leads to the emergence of out-of-plane electric polarization and piezoelectricity. Using first-principles density functional theory, we show that monolayer and bilayer heterostructure Janus MoSSe moieties exhibit strong nonlinear optical responses that are vanishing in the non-Janus form. The absence of horizontal mirror plane symmetry enables a circular photocurrent as well as a large out-of-plane second harmonic generation (SHG) and shift photocurrent. Through a comparative study of the Janus heterostructure MoS2-MoSSe on five distinct stacking configurations, we find that the magnitude of the out-of-plane SHG in the Janus heterostructure is enhanced due to the interlayer coupling and interference effect compared to that of monolayer MoSSe. Thus, Janus 2D materials offer a unique opportunity for exploring nonlinear optical phenomena and designing configurable layered nonlinear optical materials.
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Affiliation(s)
- Alex Strasser
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Hua Wang
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, United States
- Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, United States
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Khan H, Ashraf MU, Idrees M, Din HU, Nguyen CV, Amin B. Intriguing interfacial characteristics of the CS contact with MX 2 (M = Mo, W; X = S, Se, Te) and MXY ((X ≠ Y) = S, Se, Te) monolayers. RSC Adv 2022; 12:12292-12302. [PMID: 35480342 PMCID: PMC9036409 DOI: 10.1039/d2ra00668e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Accepted: 04/08/2022] [Indexed: 11/27/2022] Open
Abstract
Using (hybrid) first principles calculations, the electronic band structure, type of Schottky contact and Schottky barrier height established at the interface of the most stable stacking patterns of the CS-MX2 (M = Mo, W; X = S, Se, Te) and CS-MXY ((X ≠ Y) = S, Se, Te) MS vdWH are investigated. The electronic band structures of CS-MX2 and CS-MXY MS vdWH seem to be simple sum of CS, MX2 and MXY monolayers. The projected electronic properties of the CS, MX2 and MXY layers are well preserved in CS-MX2 and CS-MXY MS vdWH. Their smaller effective mass (higher carrier mobility) render promising prospects of CS-WS2 and CS-MoSeTe as compared to other MS vdWH in nanoelectronic and optoelectronic devices, such as a high efficiency solar cell. In addition, we found that the effective mass of holes is higher than that of electrons, suggesting that these heterostructures can be utilized for hole/electron separation. Interestingly, the MS contact led to the formation of a Schottky contact or ohmic contact, therefore we have used the Schottky Mott rule to calculate the Schottky barrier height (SBH) of CS-MX2 (M = Mo, W; X = S, Se, Te) and CS-MXY ((X ≠ Y) = S, Se, Te) MS vdWH. It was found that CS-MX2 (M = Mo, W; X = S, Se, Te) and CS-MXY ((X ≠ Y) = S, Se, Te) (in both model-I and -II) MS vdWH form p-type Schottky contacts. These p-type Schottky contacts can be considered a promising building block for high-performance photoresponsive optoelectronic devices, p-type electronics, CS-based contacts, and for high-performance electronic devices.
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Affiliation(s)
- H Khan
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - M U Ashraf
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - M Idrees
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - H U Din
- Department of Physics, Bacha Khan University Charsadda 24420 Pakistan
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi 100000 Vietnam
| | - B Amin
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
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22
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Jakhar M, Kumar A, Ahluwalia PK, Tankeshwar K, Pandey R. Engineering 2D Materials for Photocatalytic Water-Splitting from a Theoretical Perspective. MATERIALS (BASEL, SWITZERLAND) 2022; 15:2221. [PMID: 35329672 PMCID: PMC8954018 DOI: 10.3390/ma15062221] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/08/2022] [Revised: 03/06/2022] [Accepted: 03/14/2022] [Indexed: 12/19/2022]
Abstract
Splitting of water with the help of photocatalysts has gained a strong interest in the scientific community for producing clean energy, thus requiring novel semiconductor materials to achieve high-yield hydrogen production. The emergence of 2D nanoscale materials with remarkable electronic and optical properties has received much attention in this field. Owing to the recent developments in high-end computation and advanced electronic structure theories, first principles studies offer powerful tools to screen photocatalytic systems reliably and efficiently. This review is organized to highlight the essential properties of 2D photocatalysts and the recent advances in the theoretical engineering of 2D materials for the improvement in photocatalytic overall water-splitting. The advancement in the strategies including (i) single-atom catalysts, (ii) defect engineering, (iii) strain engineering, (iv) Janus structures, (v) type-II heterostructures (vi) Z-scheme heterostructures (vii) multilayer configurations (viii) edge-modification in nanoribbons and (ix) the effect of pH in overall water-splitting are summarized to improve the existing problems for a photocatalytic catalytic reaction such as overcoming large overpotential to trigger the water-splitting reactions without using cocatalysts. This review could serve as a bridge between theoretical and experimental research on next-generation 2D photocatalysts.
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Affiliation(s)
- Mukesh Jakhar
- Department of Physics, Central University of Punjab, Bathinda 151401, India;
| | - Ashok Kumar
- Department of Physics, Central University of Punjab, Bathinda 151401, India;
| | | | - Kumar Tankeshwar
- Department of Physics and Astrophysics, Central University of Haryana, Mahendragarh 123031, India;
| | - Ravindra Pandey
- Department of Physics, Michigan Technological University, Houghton, MI 49931, USA;
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23
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Yagmurcukardes M, Sozen Y, Baskurt M, Peeters FM, Sahin H. Interface-dependent phononic and optical properties of GeO/MoSO heterostructures. NANOSCALE 2022; 14:865-874. [PMID: 34985489 DOI: 10.1039/d1nr06534c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The interface-dependent electronic, vibrational, piezoelectric, and optical properties of van der Waals heterobilayers, formed by buckled GeO (b-GeO) and Janus MoSO structures, are investigated by means of first-principles calculations. The electronic band dispersions show that O/Ge and S/O interface formations result in a type-II band alignment with direct and indirect band gaps, respectively. In contrast, O/O and S/Ge interfaces give rise to the formation of a type-I band alignment with an indirect band gap. By considering the Bethe-Salpeter equation (BSE) on top of G0W0 approximation, it is shown that different interfaces can be distinguished from each other by means of the optical absorption spectra as a consequence of the band alignments. Additionally, the low- and high-frequency regimes of the Raman spectra are also different for each interface type. The alignment of the individual dipoles, which is interface-dependent, either weakens or strengthens the net dipole of the heterobilayers and results in tunable piezoelectric coefficients. The results indicate that the possible heterobilayers of b-GeO/MoSO asymmetric structures possess various electronic, optical, and piezoelectric properties arising from the different interface formations and can be distinguished by means of various spectroscopic techniques.
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Affiliation(s)
- M Yagmurcukardes
- Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey.
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Y Sozen
- Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey.
| | - M Baskurt
- Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey.
| | - F M Peeters
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- NANOlab Center of Excellence, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - H Sahin
- Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey.
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Van der Waal heterostructure of hBAs and XMY (M = Mo, W; (X≠Y) = S, Se) monolayers. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2021.111374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Munawar M, Idrees M, Ahmad I, Din HU, Amin B. Intriguing electronic, optical and photocatalytic performance of BSe, M 2CO 2 monolayers and BSe-M 2CO 2 (M = Ti, Zr, Hf) van der Waals heterostructures. RSC Adv 2021; 12:42-52. [PMID: 35424496 PMCID: PMC8978625 DOI: 10.1039/d1ra07569a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Accepted: 12/01/2021] [Indexed: 12/20/2022] Open
Abstract
Using density functional (DFT) theory calculations, we have investigated the electronic band structure, optical and photocatalytic response of BSe, M2CO2 (M = Ti, Zr, Hf) monolayers and their corresponding BSe-M2CO2 (M = Ti, Zr, Hf) van der Waals (vdW) heterostructures. Optimized lattice constant, bond length, band structure and bandgap values, effective mass of electrons and holes, work function and conduction and valence band edge potentials of BSe and M2CO2 (M = Ti, Zr, Hf) monolayers are in agreement with previously available data. Binding energies, interlayer distance and Ab initio molecular dynamic simulations (AIMD) calculations show that BSe-M2CO2 (M = Ti, Zr, Hf) vdW heterostructures are stable with specific stacking and demonstrate that these heterostructures might be synthesized in the laboratory. The electronic band structure shows that all the studied vdW heterostructures have indirect bandgap nature - with the CBM and VBM at the Γ-K and Γ-point of BZ for BSe-Ti2CO2, respectively; while for BSe-Zr2CO2 and BSe-Hf2CO2 vdW heterostructures the CBM and VBM lie at the K-point and Γ-point of BZ, respectively. Type-II band alignment in BSe-M2CO2 (M = Ti, Zr, Hf) vdW heterostructures prevent the recombination of electron-hole pairs, and hence are crucial for light harvesting and detection. Absorption spectra are investigated to understand the optical behavior of BSe-M2CO2 (M = Ti, Zr, Hf) vdW heterostructures, where the lowest energy transitions are dominated by excitons. Furthermore, BSe-M2CO2 (M = Ti, Zr, Hf) vdW heterostructures are found to be potential photocatalysts for water splitting at pH = 0, and exhibit enhanced optical properties in the visible light zones.
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Affiliation(s)
- M Munawar
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - M Idrees
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
| | - Iftikhar Ahmad
- Center for Computational Materials Science, University of Malakand Chakdara 18800 Pakistan
- Department of Physics, Gomal University DI Khan Pakistan
| | - H U Din
- Department of Physics, Bacha Khan University Charsadda Pakistan
| | - B Amin
- Department of Physics, Abbottabad University of Science & Technology Abbottabad 22010 Pakistan
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Sun N, Wang M, Quhe R, Liu Y, Liu W, Guo Z, Ye H. Armchair Janus MoSSe Nanoribbon with Spontaneous Curling: A First-Principles Study. NANOMATERIALS 2021; 11:nano11123442. [PMID: 34947791 PMCID: PMC8706186 DOI: 10.3390/nano11123442] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Revised: 12/10/2021] [Accepted: 12/15/2021] [Indexed: 11/16/2022]
Abstract
Based on density functional theory, we theoretically investigate the electronic structures of free-standing armchair Janus MoSSe nanoribbons (A-MoSSeNR) with width up to 25.5 nm. The equilibrium structures of nanoribbons with spontaneous curling are obtained by energy minimization in molecular dynamics (MD). The curvature is 0.178 nm-1 regardless of nanoribbon width. Both finite element method and analytical solution based on continuum theory provide qualitatively consistent results for the curling behavior, reflecting that relaxation of intrinsic strain induced by the atomic asymmetry acts as the driving force. The non-edge bandgap of curled A-MoSSeNR reduces faster with the increase of width compared with planar nanoribbons. It can be observed that the real-space wave function at the non-edge VBM is localized in the central region of the curled nanoribbon. When the curvature is larger than 1.0 nm-1, both edge bandgap and non-edge bandgap shrink with the further increase of curvature. Moreover, we explore the spontaneous curling and consequent sewing process of nanoribbon to form nanotube (Z-MoSSeNT) by MD simulations. The spontaneously formed Z-MoSSeNT with 5.6 nm radius possesses the lowest energy. When radius is smaller than 0.9 nm, the bandgap of Z-MoSSeNT drops rapidly as the radius decreases. We expect the theoretical results can help build the foundation for novel nanoscale devices based on Janus TMD nanoribbons.
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Affiliation(s)
- Naizhang Sun
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China; (N.S.); (R.Q.); (Y.L.); (W.L.)
| | - Mingchao Wang
- Centre for Theoretical and Computational Molecular Science, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, QLD 4072, Australia;
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China; (N.S.); (R.Q.); (Y.L.); (W.L.)
| | - Yumin Liu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China; (N.S.); (R.Q.); (Y.L.); (W.L.)
| | - Wenjun Liu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China; (N.S.); (R.Q.); (Y.L.); (W.L.)
| | - Zhenlin Guo
- Mechanics Division, Beijing Computational Science Research Center, Beijing 100193, China;
| | - Han Ye
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China; (N.S.); (R.Q.); (Y.L.); (W.L.)
- Correspondence:
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Wang J, Zhao X, Hu G, Ren J, Yuan X. Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe 2N 4 van der Waals Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3338. [PMID: 34947685 PMCID: PMC8709393 DOI: 10.3390/nano11123338] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2021] [Revised: 11/30/2021] [Accepted: 12/06/2021] [Indexed: 12/13/2022]
Abstract
van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.
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Affiliation(s)
- Jiali Wang
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, China; (J.W.); (X.Z.); (G.H.)
| | - Xiuwen Zhao
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, China; (J.W.); (X.Z.); (G.H.)
| | - Guichao Hu
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, China; (J.W.); (X.Z.); (G.H.)
| | - Junfeng Ren
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, China; (J.W.); (X.Z.); (G.H.)
- Shandong Provincial Engineering and Technical Center of Light Manipulations & Institute of Materials and Clean Energy, Shandong Normal University, Jinan 250358, China
| | - Xiaobo Yuan
- School of Physics and Electronics, Shandong Normal University, Jinan 250358, China; (J.W.); (X.Z.); (G.H.)
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Jamdagni P, Pandey R, Tankeshwar K. First principles study of Janus WSeTe monolayer and its application in photocatalytic water splitting. NANOTECHNOLOGY 2021; 33:025703. [PMID: 34614482 DOI: 10.1088/1361-6528/ac2d46] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2021] [Accepted: 10/06/2021] [Indexed: 06/13/2023]
Abstract
By employing the state-of-the-art density functional theory method, we demonstrate that Janus WSeTe monolayer exhibits promising photocatalytic properties for solar water splitting. The results show that the monolayer possesses thermodynamic stability, suitable bandgap (∼1.89 eV), low excitons binding energy (∼0.19 eV) together with high hole mobility (∼103cm2V-1s-1). Notably, the results suggest that the oxygen evolution reaction can undergo spontaneously without any sacrificial reagents. In contrast, the overpotential of hydrogen evolution reaction can partially be overcome by the external potential under solar light irradiation. Furthermore, the intrinsic electric field induced by the symmetry breaking along the perpendicular direction of Janus WSeTe monolayer not only suppresses the electron-hole recombination but also contributes to the solar-to-hydrogen efficiency, which is calculated to be ∼19%. These characteristics make the Janus WSeTe monolayer to be a promising candidate for solar water splitting.
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Affiliation(s)
- Pooja Jamdagni
- Department of Physics, Guru Jambheshwar University of Science and Technology, Hisar 125001, India
- Department of Physics, Central University of Haryana, Mahendragarh 123031, India
| | - Ravindra Pandey
- Department of Physics, Michigan Technological University, Houghton, MI 49931, United States of America
| | - K Tankeshwar
- Department of Physics, Central University of Haryana, Mahendragarh 123031, India
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29
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Alrebdi TA, Amin B. Van der Waals heterostructure of Janus transition metal dichalcogenides monolayers (WSSe-WX2 (X=S, Se)). Chem Phys 2021. [DOI: 10.1016/j.chemphys.2021.111252] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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30
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Li W, Wei J, Chen W, Jing S, Pan J, Bian B, Liao B, Wang G. The in-plane metal contacted 5.1 nm Janus WSSe Schottky barrier field-effect transistors. NANOTECHNOLOGY 2021; 32:475702. [PMID: 34380127 DOI: 10.1088/1361-6528/ac1cc2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Edge contact between two-dimensional materials and metal can achieve small contact resistance because of strong interaction. In this work, we investigated the electronic transport of in-plane (IP) heterojunctions based on Ti/WSSe and Sn/WSSe using first principle calculations. The results showed that the interface bonding and metallization are found on the IP Ti/WSSe and Sn/WSSe contact interface, indicating that the Ohmic contacts are formed between Ti, Sn and WSSe. Then, we constructed double-gate model to investigate the performance of the IP Ti and Sn contacted 5.1 nm WSSe Schottky barrier field-effect transistors (SBFETs). The calculated on-state current of the IP Ti contacted 5.1 nm WSSe SBFETs is 406.3 μA/μm. While, the on-state current of the Sn contacted 5.1 nm WSSe SBFETs reachs up to 1104.2 μA/μm, which is far beyond the requirements of the requirements of International Technology Roadmap for Semiconductor (ITRS) HP application targets. Our study will provide a guide for high performance transistors based on IP metal/WSSe configurations in the future.
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Affiliation(s)
- Wei Li
- School of Science, Jiangnan University, Lihu Avenue, Wuxi, 214122, CHINA
| | - Jinlei Wei
- Jiangnan University, Lihu Avenue, Wuxi, Jiangsu, 214122, CHINA
| | - Wen Chen
- Jiangnan University, Lihu Avenue, Wuxi, 214122, CHINA
| | - Sicheng Jing
- Jiangnan University, Lihu Avenue, Wuxi, 214122, CHINA
| | - Jinghua Pan
- Jiangnan University, Lihu Avenue, Wuxi, 214122, CHINA
| | - Baoan Bian
- Jiangnan University, Lihu Avenue, Wuxi, 214122, CHINA
| | - Bin Liao
- College of Nuclear Science and Technology, Beijing Normal University, Beijing, Beijing, 100000, CHINA
| | - Guoliang Wang
- Guangdong Guangxin Ion Beam Technology Co., Ltd, Guangzhou, Guangzhou, 510000, CHINA
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31
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Li X, Zhang K, Zeng X, Li N, Wang J. Electronic and photochemical properties of hybrid binary silicon and germanium derived Janus monolayers. Phys Chem Chem Phys 2021; 23:17502-17511. [PMID: 34359072 DOI: 10.1039/d1cp01507a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic structures and optical properties of a novel class of hybrid binary Janus materials derived from IV-V groups were investigated using first principles calculations. The computational results demonstrated that, except for Ge2NAs, all the other five structures of M2XY monolayers (M = Si, Ge; X, Y = N, P, As; X ≠ Y) have excellent thermal and dynamical stabilities. Janus Si2NP, Si2NAs, Si2PAs and Ge2NP are semiconductors with direct band gaps spanning the range between 0.82 and 2.49 eV. Notably, the hybrid M2XY materials exhibit highly efficient absorption within the visible light region, which are greatly higher than their pristine MX structures. Janus Si2PAs and Ge2PAs possess appropriate band edge alignments that straddle the water redox potentials in the pH range from 0 to 14, making them promising photocatalysts for water splitting under visible light. Our calculations further demonstrate that the catalytic selectivity for the water splitting reaction could be achieved through the hybrid Janus M2XY, where, for instance, Ge2NP appears to facilitate only the oxidation, but not the reduction of water under certain conditions. This outcome provides a new route for the design of novel photocatalysts with improved efficiency and selectivity.
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Affiliation(s)
- Xiuyuan Li
- State Key Laboratory of Explosion Science and Technology, School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China.
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Ahmad S, Khan F, Amin B, Ahmad I. Effect of strain on structural and electronic properties, and thermoelectric response of MXY (M=Zr, Hf and Pt; X/Y=S, Se) vdW heterostructures; A first principles study. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122189] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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33
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Zhang YF, Pan J, Du S. Geometric, electronic, and optical properties of MoS 2/WSSe van der Waals heterojunctions: a first-principles study. NANOTECHNOLOGY 2021; 32:355705. [PMID: 34038884 DOI: 10.1088/1361-6528/ac0569] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2021] [Accepted: 05/26/2021] [Indexed: 06/12/2023]
Abstract
Van der Waals (vdW) heterojunctions constructed by vertical stacking two-dimensional transition metal dichalcogenides hold exciting promise in realizing future atomically thin electronic and optoelectronic devices. Recently, a Janus WSSe structure has been successfully synthesized by using chemical vapor deposition, selective epitaxy atomic replacement, and pulsed laser deposition methods. Herein, based on first-principles calculations, we introduce the structures and performances of MoS2/WSSe vdW heterojunctions with different interfaces and stacking modes. The vdW heterojunctions possess indirect band gaps for S-S interfaces, while direct band gaps for Se-S interfaces. Besides, the potential drop indicates an efficient separation of photogenerated charges. Interestingly, the opposite built-in electric fields formed in the vdW heterojunctions with a S-S interface and a Se-S interface suggest different charge transfer paths, which would motivate further theoretical and experimental investigations on charge transfer dynamics. Moreover, the electronic property is adjustable by applying external in-plane strains, accomplishing with indirect to direct bandgap transition and semiconductor to metal transition. The findings are helpful for the design of multi-functional high-performance electronic and optoelectronic devices based on the MoS2/WSSe vdW heterojunctions.
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Affiliation(s)
- Yan-Fang Zhang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Jinbo Pan
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Shixuan Du
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
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34
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Zeng J, Liu G, Han Y, Luo W, Wu M, Xu B, Ouyang C. Effects of Strain and Electric Field on Molecular Doping in MoSSe. ACS OMEGA 2021; 6:14639-14647. [PMID: 34124487 PMCID: PMC8190909 DOI: 10.1021/acsomega.1c01747] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 05/17/2021] [Indexed: 06/12/2023]
Abstract
Recently, synthesized Janus MoSSe monolayers have attracted tremendous attention in science and technology due to their novel properties and promising applications. In this work, we investigate their molecular adsorption-induced structural and electronic properties and tunable doping effects under biaxial strain and external electric field by first-principles calculations. We find an effective n-type or p-type doping in the MoSSe monolayer caused by noncovalent tetrathiafulvalene (TTF) or tetracyanoquinodimethane (TCNQ) molecular adsorption. Moreover, the concentration of doping carrier with respect to the S or Se side also exhibits Janus characteristics because of the electronegativity difference between S and Se atoms and the intrinsic dipole moment in the MoSSe monolayer. In particular, this n-type or p-type molecular doping effect can be flexibly tuned by biaxial strain or under external electric field. By analyzing the valence band maximum (VBM) and conduction band minimum (CBM) in the band structure of MoSSe/TTF under strain, the strain-tunable band gap of MoSSe and the n-type molecular doping effect is revealed. Further explanation of charge transfer between TTF or TCNQ and the MoSSe monolayer by an equivalent capacitor model shows that the superimposition of external electric field and molecular adsorption-induced internal electric field plays a crucial role in achieving a controllable doping concentration in the MoSSe monolayer.
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35
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Alam Q, Muhammad S, Idrees M, Hieu NV, Binh NTT, Nguyen C, Amin B. First-principles study of the electronic structures and optical and photocatalytic performances of van der Waals heterostructures of SiS, P and SiC monolayers. RSC Adv 2021; 11:14263-14268. [PMID: 35423989 PMCID: PMC8697698 DOI: 10.1039/d0ra10808a] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Accepted: 03/15/2021] [Indexed: 11/26/2022] Open
Abstract
Designing van der Waals (vdW) heterostructures of two-dimensional materials is an efficient way to realize amazing properties as well as open up opportunities for applications in solar energy conversion, nanoelectronic and optoelectronic devices. The electronic structures and optical and photocatalytic properties of SiS, P and SiC van der Waals (vdW) heterostructures are investigated by (hybrid) first-principles calculations. Both binding energy and thermal stability spectra calculations confirm the stability of these heterostructures. Similar to the corresponding parent monolayers, SiS–P (SiS–SiC) vdW heterostructures are found to be indirect type-II bandgap semiconductors. Furthermore, absorption spectra are calculated to understand the optical behavior of these systems, where the lowest energy transitions lie in the visible region. The valence and conduction band edges straddle the standard redox potentials of SiS, P and SiC vdW heterostructures, making them promising candidates for water splitting in acidic solution. The electronic structures and optical and photocatalytic properties of SiS, P and SiC van der Waals (vdW) heterostructures are investigated by (hybrid) first-principles calculations.![]()
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Affiliation(s)
- Qaisar Alam
- Department of Physics, Hazara University Mansehra Pakistan
| | - S Muhammad
- Department of Physics, Hazara University Mansehra Pakistan
| | - M Idrees
- Department of Physics, Hazara University Mansehra Pakistan
| | - Nguyen V Hieu
- Faculty of Physics, The University of Da Nang - University of Science and Education Da Nang Vietnam
| | - Nguyen T T Binh
- Department of Physics, Quang Binh University Quang Binh Vietnam
| | - C Nguyen
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam .,Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Bin Amin
- Department of Physics, Abbottabad University of Science and Technology Abbottabad 22010 Pakistan
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36
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Alam Q, Idrees M, Muhammad S, Nguyen CV, Shafiq M, Saeed Y, Din HU, Amin B. Stacking effects in van der Waals heterostructures of blueP and Janus XYO (X = Ti, Zr, Hf: Y = S, Se) monolayers. RSC Adv 2021; 11:12189-12199. [PMID: 35423756 PMCID: PMC8696924 DOI: 10.1039/d0ra10827h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/25/2020] [Accepted: 03/01/2021] [Indexed: 01/23/2023] Open
Abstract
Using first-principles calculations, the geometry, electronic structure, optical and photocatalytic performance of blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and their corresponding van der Waal heterostructures in three possible stacking patterns, are investigated. BlueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers are indirect bandgap semiconductors. A tensile strain of 8(10)% leads to TiSeO(ZrSeO) monolayers transitioning to a direct bandgap of 1.30(1.61) eV. The calculated binding energy and AIMD simulation show that unstrained(strained) blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and their heterostructures are thermodynamically stable. Similar to the corresponding monolayers, blueP-XYO (X = Ti, Zr, Hf: Y = S, Se) vdW heterostructures in three possible stacking patterns are indirect bandgap semiconductors with staggered band alignment, except blueP-TiSeO vdW heterostructure, which signifies straddling band alignment. Absorption spectra show that optical transitions are dominated by excitons for blueP and XYO (X = Ti, Zr, Hf; Y = S, Se) monolayers and the corresponding vdW heterostructures. Both E VB and E CB in TiSO, ZrSO, ZrSeO and HfSO monolayers achieve energetically favorable positions, and therefore, are suitable for water splitting at pH = 0, while TiSeO and HfSeO monolayers showed good response for reduction and fail to oxidise water. All studied vdW heterostructures also show good response to any produced O2, while specific stacking reduces H+ to H2.
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Affiliation(s)
- Qaisar Alam
- Department of Physics, Hazara University Mansehra 21300 Pakistan
| | - M Idrees
- Department of Physics, Hazara University Mansehra 21300 Pakistan
| | - S Muhammad
- Department of Physics, Hazara University Mansehra 21300 Pakistan
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Hanoi Vietnam
| | - M Shafiq
- Department of Physics, Abbottabad University of Science and Technology Abbottabad Pakistan
| | - Y Saeed
- Department of Physics, Abbottabad University of Science and Technology Abbottabad Pakistan
| | - H U Din
- Department of Physics, Abbottabad University of Science and Technology Abbottabad Pakistan
| | - B Amin
- Department of Physics, Abbottabad University of Science and Technology Abbottabad Pakistan
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37
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Zheng T, Lin YC, Yu Y, Valencia-Acuna P, Puretzky AA, Torsi R, Liu C, Ivanov IN, Duscher G, Geohegan DB, Ni Z, Xiao K, Zhao H. Excitonic Dynamics in Janus MoSSe and WSSe Monolayers. NANO LETTERS 2021; 21:931-937. [PMID: 33405934 DOI: 10.1021/acs.nanolett.0c03412] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report here details of steady-state and time-resolved spectroscopy of excitonic dynamics for Janus transition metal dichalcogenide monolayers, including MoSSe and WSSe, which were synthesized by low-energy implantation of Se into transition metal disulfides. Absorbance and photoluminescence spectroscopic measurements determined the room-temperature exciton resonances for MoSSe and WSSe monolayers. Transient absorption measurements revealed that the excitons in Janus structures form faster than those in pristine transition metal dichalcogenides by about 30% due to their enhanced electron-phonon interaction by the built-in dipole moment. By combining steady-state photoluminescence quantum yield and time-resolved transient absorption measurements, we find that the exciton radiative recombination lifetime in Janus structures is significantly longer than in their pristine samples, supporting the predicted spatial separation of the electron and hole wave functions due to the built-in dipole moment. These results provide fundamental insight in the optical properties of Janus transition metal dichalcogenides.
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Affiliation(s)
- Ting Zheng
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
| | - Yu-Chuan Lin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Pavel Valencia-Acuna
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Chenze Liu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Ilia N Ivanov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Zhenhua Ni
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
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Wang P, Zong Y, Liu H, Wen H, Liu Y, Wu HB, Xia JB. Vertical strain and electric field tunable band alignment in type-II ZnO/MoSSe van der Waals heterostructures. Phys Chem Chem Phys 2021; 23:1510-1519. [PMID: 33400744 DOI: 10.1039/d0cp05354f] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
The van der Waals heterostructure (vdWH) has attracted widespread attention as a unique structure for future electronic and optoelectronic devices. In this paper, we constructed the ZnO-SeMoS and ZnO-SMoSe vdWHs and systematically investigated their electronic structures and band alignments considering vertical strain and external electric field effects. It is found that the ZnO-SeMoS and ZnO-SMoSe vdWHs both exhibit type-II band alignment with indirect band gaps of 1.31 and 0.63 eV respectively, depending on the interface characteristics. What's more, the band alignment of these two heterostructures can be tuned to type I or type III, and their band gap can be modified to direct feature by applying vertical strain and an electric field. The results reveal that ZnO/MoSSe vdWHs have promising potential in multi-functional nanodevices, and provide a way to modify the electronic properties of Janus-based heterojunctions using interface characteristics.
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Affiliation(s)
- Pan Wang
- State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yixin Zong
- State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Hao Liu
- State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hongyu Wen
- State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Yueyang Liu
- State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Hai-Bin Wu
- State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Jian-Bai Xia
- State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. and Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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39
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Opoku F, Akoto O, Oppong SOB, Adimado AA. Two-dimensional layered type-II MS 2/BiOCl (M = Zr, Hf) van der Waals heterostructures: promising photocatalysts for hydrogen generation. NEW J CHEM 2021. [DOI: 10.1039/d1nj03867b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Our theoretical findings reveal that in-plane biaxial strain tunes the bandgap and induces a transition from indirect to direct semiconductor.
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Affiliation(s)
- Francis Opoku
- Department of Chemistry, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana
| | - Osei Akoto
- Department of Chemistry, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana
| | | | - Anthony Apeke Adimado
- Department of Chemistry, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana
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40
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Gao Y, Wu K, Hu W, Yang J. Highly efficient heterojunction solar cells enabled by edge-modified tellurene nanoribbons. Phys Chem Chem Phys 2020; 22:28414-28422. [PMID: 33305303 DOI: 10.1039/d0cp04973e] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Tellurene, a two-dimensional (2D) semiconductor, meets the requirements for optoelectronic applications with desirable properties, such as a suitable band gap, high carrier mobility, strong visible light absorption and high air stability. Here, we demonstrate that the band engineering of zigzag tellurene nanoribbons (ZTNRs) via edge-modification can be used to construct highly efficient heterojunction solar cells by using first-principles density functional theory (DFT) calculations. We find that edge-modification enhances the stability of ZTNRs and halogen-modified ZTNRs showing suitable band gaps (1.35-1.53 eV) for sunlight absorption. Furthermore, the band gaps of ZTNRs with tetragonal edges do not strongly depend on the edge-modification and ribbon width, which is conducive to experimental realization. The heterojunctions constructed by halogen-modified ZTNRs show desirable type 2 band alignments and small band offsets with reduced band gaps and enhanced sunlight absorption, resulting in high power conversion efficiency (PCE) in heterojunction solar cells. In particular, the calculated maximum PCE of designed heterojunction solar cells based on halogen-modified ZTNRs can reach as high as 22.6%.
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Affiliation(s)
- Yunzhi Gao
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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41
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Mohanta MK, De Sarkar A. Interfacial hybridization of Janus MoSSe and BX (X = P, As) monolayers for ultrathin excitonic solar cells, nanopiezotronics and low-power memory devices. NANOSCALE 2020; 12:22645-22657. [PMID: 33155008 DOI: 10.1039/d0nr07000a] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this work, we explored the interfacial two-dimensional (2D) physics and significant advancements in the application prospects of MoSSe monolayer when it is combined with a boron pnictide (BP, BAs) monolayer in a van der Waals heterostructure (vdWH) setup. The constructed vdWHs were found to be mechanically and dynamically stable, and they form type-II p-n heterojunctions. Thus, the photogenerated electron-hole pairs are spatially separated. In the BX/MoSSe vdWHs, the BX monolayer serves as excellent donor material for MoSSe, having an ideal donor band gap of ∼1.3 eV. The small value of the conduction band offset (CBO) between the individual monolayers in the vdWHs makes it an excellent candidate for solar energy harvesting in excitonic solar cells, where the power conversion efficiencies were calculated to be 22.97% (BP/MoSSe) and 20.86% (BAs/MoSSe). Also, more than four-fold enhancement in the out-of-plane piezoelectric coefficient (d33) was observed in the MoSSe-based vdWH relative to that in the MoS2-based vdWH owing to the intrinsic built-in vertical electric field in MoSSe. This is consistent with the out-of-plane piezoelectricity brought about by the alteration in symmetry at the metal-semiconductor Schottky junction, which has been observed experimentally [M.-M. Yang, Z.-D. Luo, Z. Mi, J. Zhao, S. P. E and M. Alexe, Nature, 2020, 584, 377-381]. The results obtained in this work provide useful insights into the design of nanomaterials for future applications in nano-optoelectronics, more efficient excitonic solar cells, and nanoelectromechanical systems (NEMS). Furthermore, this work demonstrates outstanding potential for the application of these vdWHs in superfast electronics, including low-power digital data storage and memory devices, where the tunnel current between the source and drain is effectively tunable using a normal electric field of small magnitude serving as the gate voltage.
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Affiliation(s)
- Manish Kumar Mohanta
- Institute of Nano Science and Technology, Phase 10, Sector 64, Mohali, Punjab - 160062, India.
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Yu S, Wei W, Li F, Huang B, Dai Y. Electronic properties of Janus MXY/graphene (M = Mo, W; X ≠ Y = S, Se) van der Waals structures: a first-principles study. Phys Chem Chem Phys 2020; 22:25675-25684. [PMID: 33146159 DOI: 10.1039/d0cp04323k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Based on the first-principles calculations, we studied the intrinsic dipole moment and electronic properties of Janus MXY (M = Mo, W; X ≠ Y = S, Se) monolayers, bilayers and heterostructures with graphene, and the possibility of MXY encapsulating graphene. The results show that Janus MXY monolayer has an intrinsic dipole moment and a direct band gap. However, for MXY bilayers strong interlayer coupling will cause direct to indirect band gap transition, and the existence of the dipole moment leads to a significantly large interlayer band offset, being the driving force for the formation of interlayer excitons. In MXY/graphene heterostructures, changes in the direction of intrinsic dipole moment will cause a change in Schottky barrier height and even the transition between p- and n-type Schottky contacts. Independent of the interface atomic layer of Janus MXY, on one hand, the Dirac cone still exists in graphene, proving that MXY is an ideal coating material. On the other hand, the type-II band alignment will disappear as the intrinsic dipole moment disappears, confirming that the intrinsic dipole moment plays a vital role in the formation of a large band offset. Our results provide guidance for the study of interlayer excitonic states, the experimental construction of atomically thin p-n junctions and the encapsulation of graphene.
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Affiliation(s)
- Shiqiang Yu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
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Alrebdi TA, Amin B. Optoelectronic and photocatalytic applications of hBP-XMY (M = Mo, W; (X ≠ Y) = S, Se, Te) van der Waals heterostructures. Phys Chem Chem Phys 2020; 22:23028-23037. [PMID: 33047747 DOI: 10.1039/d0cp03926h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Stacking of layers via weak van der Waals interactions is an important technique for tuning the physical properties and designing viable electronic products. Using first-principles calculations, the geometry, electronic structure, and optical and photocatalytic performance of novel vdW heterostructures based on hexagonal boron phosphide (hBP) and Janus (XMY (M = Mo, W; (X ≠ Y) = S, Se, Te)) monolayers are investigated. Favorable (dynamically and energetically) stacking patterns of two different models of hBP-XMY heterostructures are presented with an alternative order of chalcogen atoms at opposite surfaces in SMSe. A direct type-II band alignment is obtained in both models of hBP-SMoSe, hBP-SWSe and hBP-SeWTe, while the rest are type-II indirect bandgap semiconductors. The Bader charge, and planer-averaged and plane-averaged charge density differences are investigated, which show that hBP donates electrons to the SMoSe and SWSe layer in the hBP-SMoSe and hBP-SWSe vdW heterostructure, while in the case of the hBP-SMoTe (hBP-SWTe) and hBP-SeMoTe (hBP-SeWTe) vdW heterostructures, the transfer of electrons is observed from SMoTe (SWTe) and SeMoTe (SeWTe) to hBP. The imaginary part of the dielectric function shows that the lowest energy transitions are dominated by excitons with a systematic red shift for heavier chalcogen atoms. Furthermore, the photocatalytic performance indicates that the hBP-XMY (M = Mo, W; (X ≠ Y) = S, Se, Te) vdW heterostructures in model-I are suitable for water splitting at pH = 0.
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Affiliation(s)
- Tahani A Alrebdi
- Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, Riyadh, Saudi Arabia
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Patel A, Singh D, Sonvane Y, Thakor PB, Ahuja R. High Thermoelectric Performance in Two-Dimensional Janus Monolayer Material WS-X ( X = Se and Te). ACS APPLIED MATERIALS & INTERFACES 2020; 12:46212-46219. [PMID: 32931245 PMCID: PMC7584335 DOI: 10.1021/acsami.0c13960] [Citation(s) in RCA: 39] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2020] [Accepted: 09/15/2020] [Indexed: 05/27/2023]
Abstract
In the present work, Janus monolayers WSSe and WSTe are investigated by combining first-principles calculations and semiclassical Boltzmann transport theory. Janus WSSe and WSTe monolayers show a direct band gap of 1.72 and 1.84 eV at K-points, respectively. These layered materials have an extraordinary Seebeck coefficient and electrical conductivity. This combination of high Seebeck coefficient and high electrical conductivity leads to a significantly large power factor. In addition, the lattice thermal conductivity in the Janus monolayer is found to be relatively very low as compared to the WS2 monolayer. This leads to a high figure of merit (ZT) value of 2.56 at higher temperatures for the Janus WSTe monolayer. We propose that the Janus WSTe monolayer could be used as a potential thermoelectric material due to its high thermoelectric performance. The result suggests that the Janus monolayer is a better candidate for excellent thermoelectric conversion.
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Affiliation(s)
- Abhishek Patel
- Department of physics, Veer Narmad South Gujarat University, Surat 395007, India
| | - Deobrat Singh
- Condensed Matter Theory group, Materials
Theory Division, Department of Physics and Astronomy, Uppsala University, Uppsala 751-20, Sweden
| | - Yogesh Sonvane
- Advanced
Materials Lab, Department of Applied Physics, S.V. National Institute
of Technology, Surat 395007, India
| | - P. B. Thakor
- Department of physics, Veer Narmad South Gujarat University, Surat 395007, India
| | - Rajeev Ahuja
- Condensed Matter Theory group, Materials
Theory Division, Department of Physics and Astronomy, Uppsala University, Uppsala 751-20, Sweden
- Applied
Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology (KTH), S-100 44 Stockholm, Sweden
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Wang D, Liu L, Basu N, Zhuang HL. High‐Throughput Computational Characterization of 2D Compositionally Complex Transition‐Metal Chalcogenide Alloys. ADVANCED THEORY AND SIMULATIONS 2020. [DOI: 10.1002/adts.202000195] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Duo Wang
- School for Engineering of Matter Transport and Energy Arizona State University Tempe AZ 85287 USA
| | - Lei Liu
- School for Engineering of Matter Transport and Energy Arizona State University Tempe AZ 85287 USA
| | - Neha Basu
- School for Engineering of Matter Transport and Energy Arizona State University Tempe AZ 85287 USA
- BASIS Scottsdale High School Scottsdale AZ 85259 USA
| | - Houlong L. Zhuang
- School for Engineering of Matter Transport and Energy Arizona State University Tempe AZ 85287 USA
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Idrees M, Nguyen CV, Bui HD, Ahmad I, Amin B. van der Waals heterostructures based on MSSe (M = Mo, W) and graphene-like GaN: enhanced optoelectronic and photocatalytic properties for water splitting. Phys Chem Chem Phys 2020; 22:20704-20711. [PMID: 32901640 DOI: 10.1039/d0cp03434g] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/10/2023]
Abstract
The geometric structure, electronic, optical and photocatalytic properties of MSSe-g-GaN (M = Mo, W) van der Waals (vdW) heterostructures are investigated by performing first-principles calculations. We find that the MoSSe-g-GaN heterostructure exhibits type-II band alignment for all stacking patterns. While the WSSe-g-GaN heterostructure forms the type-II or type-I band alignment for the stacking model-I or model II, respectively. The average electrostatic potential shows that the potential of g-GaN is deeper than the MSSe monolayer, leading to the formation of an electrostatic field across the interface, causing the transfer of photogenerated electrons and holes. Efficient interfacial formation of interface and charge transfer reduce the work function of MSSe-g-GaN vdW heterostructures as compared to the constituent monolayer. The difference in the carrier mobility for electrons and holes suggests that these heterostructures could be utilized for hole/electron separation. Absorption spectra demonstrate that strong absorption from infrared to visible light in these vdW heterostructures can be achieved. Appropriate valence and conduction band edge positions with standard redox potentials provide enough force to drive the photogenerated electrons and holes to dissociate water into H+/H2 and O2/H2O at pH = 0.
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Affiliation(s)
- M Idrees
- Department of Physics, Hazara University, Mansehra 21300, Pakistan
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University, Ha Noi 100000, Vietnam.
| | - H D Bui
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
| | - Iftikhar Ahmad
- Department of Physics, University of Malakand, Chakdara, 18800, Pakistan
| | - Bin Amin
- Department of Physics, Abbottabad Uniersity of Science and Technology, Abbottabad 22010, Pakistan.
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Chaurasiya R, Dixit A. Ultrahigh sensitivity with excellent recovery time for NH 3 and NO 2 in pristine and defect mediated Janus WSSe monolayers. Phys Chem Chem Phys 2020; 22:13903-13922. [PMID: 32542298 DOI: 10.1039/d0cp02063j] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
We demonstrated ultrahigh sensitivity with excellent recovery time for H2S, NH3, NO2, and NO molecules on the sulfur and selenium surfaces of Janus WSSe monolayers using density functional theory. The selenium surface of the WSSe monolayer showed strong adsorption in comparison to the sulfur surface. The respective adsorption energies for H2S, NH3, NO2 and NO molecules are -0.193 eV, -0.220 eV, -0.276 eV, and -0.189 eV. These values are higher than the experimentally reported values for ultrahigh sensitivity gas sensors based on MoS2, MoSe2, WS2, and WSe2 monolayers. The computed adsorption energy and recovery time suggest that the desorption of gas molecules can be achieved easily in the WSSe monolayer. Further, the probable vacancy defects SV, SeV, and (S/Se)V and antisite defects SSe, and SeS are considered to understand their impact on the adsorption properties with respect to the pristine WSSe monolayer. We observed that the defect-including WSSe monolayers showed enhanced adsorption energy with fast recovery, which makes the Janus WSSe monolayer an excellent material for nanoscale gas sensors with ultrahigh sensitivity and excellent recovery time.
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Affiliation(s)
- Rajneesh Chaurasiya
- Department of Physics and Center for Solar Energy, Indian Institute of Technology, Jodhpur, 342037, India.
| | - Ambesh Dixit
- Department of Physics and Center for Solar Energy, Indian Institute of Technology, Jodhpur, 342037, India.
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Gao Y, Liu X, Hu W, Yang J. Tunable n-type and p-type doping of two-dimensional layered PdSe 2via organic molecular adsorption. Phys Chem Chem Phys 2020; 22:12973-12979. [PMID: 32507864 DOI: 10.1039/d0cp01484b] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Palladium diselenide (PdSe2) is a two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor with desirable properties for nanoelectronics. Here, we demonstrate that 2D layered PdSe2 adsorbed with two kinds of organic molecules, an electrophilic molecule tetracyano-p-quinodimethane (TCNQ) as an electron acceptor and a nucleophilic molecule tetrathiafulvalene (TTF) as an electron donor, can realize tunable p-type and n-type doping of 2D PdSe2 by using first-principles density functional theory (DFT) calculations. We find that TCNQ attracts electrons from PdSe2 and introduces shallow acceptor states close to the valence band edge, resulting in p-type doping of PdSe2, while TTF donates electrons into PdSe2 and introduces shallow donor states close to the conduction band edge, resulting in n-type doping of PdSe2. Furthermore, such p-type and n-type doping of PdSe2 can be efficiently controlled with an external electric field, interlayer distance and substrate thickness. Such effective bipolar doping of PdSe2via molecular adsorption would broaden its applications in nanoelectronics.
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Affiliation(s)
- Yunzhi Gao
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China.
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Huong PT, Idrees M, Amin B, Hieu NN, Phuc HV, Hoa LT, Nguyen CV. Electronic structure, optoelectronic properties and enhanced photocatalytic response of GaN-GeC van der Waals heterostructures: a first principles study. RSC Adv 2020; 10:24127-24133. [PMID: 35517332 PMCID: PMC9055037 DOI: 10.1039/d0ra04145a] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2020] [Accepted: 06/12/2020] [Indexed: 01/10/2023] Open
Abstract
In this work, we systematically studied the electronic structure and optical characteristics of van der Waals (vdW) heterostructure composed of a single layer of GaN and GeC using first principles calculations. The GaN-GeC vdW heterostructure exhibits indirect band gap semiconductor properties and possesses type-II energy band arrangement, which will help the separation of photogenerated carriers and extend their lifetime. In addition, the band edge positions of the GaN-GeC heterostructure meet both the requirements of water oxidation and reduction energy, indicating that the photocatalysts have the potential for water decomposition. The GaN-GeC heterostructure shows obvious absorption peaks in the visible region, leading to the efficient use of solar energy. Tensile and compressive strains of up to 10% are also proposed. Tensile strain leads to an increase in the blue shift of optical absorption, whereas a red shift is observed in the case of the compressive strain. These fascinating characteristics make the GaN-GeC vdW heterostructure a highly effective photocatalyst for water splitting.
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Affiliation(s)
- Pham T Huong
- Division of Computational Mathematics and Engineering, Institute for Computational Science, Ton Duc Thang University Ho Chi Minh City Vietnam
- Faculty of Environment & Labour Safety, Ton Duc Thang University Ho Chi Minh City Vietnam
| | - M Idrees
- Department of Physics, Hazara University Mansehra 21300 Pakistan
| | - B Amin
- Department of Physics, Abbottabad University of Science and Technology Abbottabad 22010 Pakistan
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University Cao Lanh 870000 Vietnam
| | - Le T Hoa
- Institute of Research and Development, Duy Tan University Da Nang 550000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University Ha Noi 100000 Vietnam
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Zhao N, Schwingenschlögl U. Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures. NANOSCALE 2020; 12:11448-11454. [PMID: 32451521 DOI: 10.1039/d0nr02084b] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The performance of an electronic device based on a two-dimensional material is strongly affected by the contact with the metallic electrodes. In this article, we study the electronic properties of two-dimensional MoSSe in contact with a germanene electrode by first-principles calculations. The results show that the contact characteristics are significantly different for the two sides of MoSSe. Notably, for both sides in-plane tensile strain induces a transition from Schottky to Ohmic behavior. Increasing the thickness of MoSSe also leads to an Ohmic contact. We propose an effective route to high performance MoSSe electronic devices.
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Affiliation(s)
- Ning Zhao
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
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