Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI2/In2Se3 van der Waals heterostructures

Magnetoelectric Tuning of 2D Ferromagnetism in 1T-CrTe2 through In2Se3 Substrate

Electric field control of two-dimensional (2D) materials with optimized magnetic properties is not only of scientific interest but also of technological importance in terms of the functionality of various nanoscale devices. Here, we report the multiferroic control of the 2D ferromagnetism in 1T-CrTe2 monolayer through a ferroelectric In2Se3 sublayer. Our results reveal the effect of polarization switching on the electronic structures and magnetic properties of 1T-CrTe2/In2Se3 heterostructures, enabling effective manipulation of their magnetic anisotropy energy (MAE) and magnetization orientation. Additionally, we also demonstrate the strong dependence of their MAE and switching effect on the external strain and surface hydrogenation. Notably, polarization switching exhibits a reversal modification in the hydrogenated multiferroic structures. These tunable behaviors are primarily attributed to the alteration of p-orbitals near the Fermi level of the interfacial Te atoms due to magnetoelectric coupling. Our findings suggest the potential of 1T-CrTe2/In2Se3 heterojunctions for the practical application of 2D multiferroic spintronic devices.

Ferroelectrically controlled electromagnetic and transport properties of VN2H2/Al2O3 van der Waals multiferroic heterostructures

The vertical integration of a ferromagnetic monolayer and a ferroelectric monolayer into van der Waals heterostructures offers a promising route to achieve two-dimensional multiferroic semiconductors owing to the lack of intrinsic single-phase multiferroic materials in nature. In this study, we propose a VN2H2/Al2O3 van der Waals magnetoelectric multiferroic heterostructure and investigate its electronic, magnetic, and transport properties using density functional theory combined with the Boltzmann transport theory. The VN2H2 monolayer is a room-temperature ferromagnetic semiconductor with a band gap of 0.24 eV and a Curie temperature of 411 K, while the Al2O3 monolayer is a ferroelectric semiconductor with a polarization value of 0.11 C m-2. In the VN2H2/Al2O3 van der Waals heterostructures, the conversion between the metal and the semiconductor can be controlled by altering the polarization of the Al2O3 layer. The VN2H2/Al2O3 van der Waals heterostructure retains room-temperature ferromagnetism, and the reverse of polarization is accompanied with a change in the direction of the easy magnetization axis. In addition, electrostatic doping can significantly improve the conductivity of the downward polarization state and transform the upward polarization state from a metal to a half-metal, achieving 100% spin polarization. Our results thus pave the way for achieving highly tunable electromagnetic and transport properties in van der Waals magnetoelectric heterostructures, which have potential applications in next-generation low-power logic and memory devices.

Robust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructures

Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.

Nonvolatile Multistate Manipulation of Topological Magnetism in Monolayer CrI3 through Quadruple-Well Ferroelectric Materials

Nonvolatile multistate manipulation of two-dimensional (2D) magnetic materials holds promise for low dissipation, highly integrated, and versatile spintronic devices. Here, utilizing density functional theory calculations and Monte Carlo simulations, we report the realization of nonvolatile and multistate control of topological magnetism in monolayer CrI3 by constructing multiferroic heterojunctions with quadruple-well ferroelectric (FE) materials. The Pt2Sn2Te6/CrI3 heterojunction exhibits multiple magnetic phases upon modulating FE polarization states of FE layers and interlayer sliding. These magnetic phases include Bloch-type skyrmions and ferromagnetism, as well as a newly discovered topological magnetic structure. We reveal that the Dzyaloshinskii-Moriya interaction (DMI) induced by interfacial coupling plays a crucial role in magnetic skyrmion manipulation, which aligns with the Fert-Levy mechanism. Moreover, a regular magnetic skyrmion lattice survives when removing a magnetic field, demonstrating its robustness. The work sheds light on an effective approach to nonvolatile and multistate control of 2D magnetic materials.

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In2Se3/MoTe2 van der Waals heterostructures

Ferroelectric polarization-controlled band alignment can be realized in van der Waals heterostructures (vdWHs), which can be used to create new types of ferroelectric tunnel junctions (FTJs). In this work, we design six probable configurations of two-dimensional vdWHs based on a two-dimensional α-In2Se3 ferroelectric material which has two opposite polarization states P↑ and P↓, and the semiconductor MoTe2. First-principles calculations show robust ferroelectric polarization-controlled switching behavior between the high conductance state in configuration AA-P↓ and the low conductance state in configuration AA-P↑ in the most stable AA stacked vdWHs. Based on this vdWH, a two-dimensional transverse FTJ with AA-P↓ or AA-P↑ as the tunneling barrier and (In0.5Sn0.5)2Se3 monolayers (n-type doped) as electrodes is designed. The tunneling electroresistance ratio of the FTJs at the Fermi level reaches 1.22 × 104% when the tunneling barrier contains two repeating units N = 2 and can be greatly increased by increasing the thickness of the ferroelectric layer. Analysis of the work function, charge redistribution, and local density of states is performed to interpret the above phenomena. The findings suggest the great potential of the AA stacked α-In2Se3/MoTe2 vdWH in the design of high-performance FTJs and application in high-density non-volatile memory devices.

Recent progress in the theoretical design of two-dimensional ferroelectric materials

Two-dimensional (2D) ferroelectrics (FEs), which maintain stable electric polarization in ultrathin films, are a promising class of materials for the development of various miniature functional devices. In recent years, several 2D FEs with unique properties have been successfully fabricated through experiments. They have been found to exhibit some unique properties either by themselves or when they are coupled with other functional materials (e.g., ferromagnetic materials, materials with 5d electrons, etc.). As a result, several new types of 2D FE functional devices have been developed, exhibiting excellent performance. As a type of newly discovered 2D functional material, the number of 2D FEs and the exploration of their properties are still limited and this calls for further theoretical predictions. This review summarizes recent progress in the theoretical predictions of 2D FE materials and provides strategies for the rational design of 2D FE materials. The aim of this review is to provide guidelines for the design of 2D FE materials and related functional devices.

Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe2/In2Se3

Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe₂/In₂Se₃experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In₂Se₃, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In₂Se₃to VSe₂, the heterostructure has a type-III band alignment, and the charge transfer from In₂Se₃into VSe₂induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In₂Se₃is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe₂was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe₂/In₂Se₃predicts its wide applications in the fields of both 2D spintronics and multiferroics.

2D Multiferroicity with Ferroelectric Switching Induced Spin-Constrained Photoelectricity

Multiferroic materials with tunable magnetoelectric orders enable the integration of sensing, data storage, and processing into one single device. The scarcity of single-phase multiferroics spurs extensive research in pursuit of composite systems combining different types of ferroic materials. In this work, spin-constrained photoelectric memory is proposed in two-dimensional (2D) layered magnetic/ferroelectric heterostructures, holding the possibility of low-power electrical write operation and nondestructive optical read operation. The ground state of ferromagnetic (FM) and antiferromagnetic (AFM) orderings in the magnetic layer is altered by polarization direction of the ferroelectric layer. Specifically, the FM heterostructure exhibits a type-II band alignment. Due to the light-induced charge transfer, spin-polarized/unpolarized current arises from the FM/AFM state, which can be recorded as the "1"/"0" state and served for logic processing and memory applications. Our first-principles calculations demonstrate that the NiI₂/In₂Se₃ heterobilayer is an ideal candidate to realize such a spin-dependent photoelectric memory. The reversible FM state (easy-axis magnetic anisotropy) and AFM state (easy-plane magnetic orientation) in the NiI₂ layer originate from interfacial charge transfer and effective electric field due to the proximity effect. This work offers considerable potential in the integration of memory processing capability into one single device with 2D layered multiferroic heterostructures.

Tunable, Ferroelectricity-Inducing, Spin-Spiral Magnetic Ordering in Monolayer FeOCl

Spin spirals (SS) are a special case of noncollinear magnetism, where the magnetic-moment direction rotates along an axis. They have generated interest for novel phenomena, spintronics applications, and their potential formation in monolayers, but the search for monolayers exhibiting SS has not been particularly fruitful. Here, we employ density functional theory calculations to demonstrate that SS form in a recently synthesized monolayer, FeOCl. The SS wavelength and stability can be tuned by doping and uniaxial strain. The SS-state band gap is larger by 0.6 eV compared to the gap of both the ferromagnetic and antiferromagnetic state, enabling bandgap tuning and possibly an unusual formation of quantum wells in a single material via magnetic-field manipulation. The SS-induced out-of-plane ferroelectricity enables switching of the SS chirality by an electric field. Finally, forming heterostructures, for example, with graphene or boron nitride, maintains SS ordering and provides another method of modulation and a potential for magnetoelectric devices.

Magnetoelectric coupling effects on the band alignments of multiferroic In2Se3-CrI3 trilayer heterostructures

Due to unique magnetoelectric coupling effects, two-dimensional (2D) multiferroic van der Waals heterostructures (vdWHs) are promising for next-generation information processing and storage devices. Here, we design theoretically multiferroic In₂Se₃/CrI₃ trilayer vdWHs with different stacking patterns. For the CrI₃/In₂Se₃/CrI₃ trilayer vdWHs, whether ferroelectric upward or downward polarization, type-I and type-II band alignments are formed for spin-up and spin-down channels. However, for the CrI₃/In₂Se₃/In₂Se₃ trilayer vdWHs, downward polarization induces the type-III band alignment, which is typical for spin-tunnel transistors. Moreover, nonvolatile ferroelectric polarization and stacking patterns can induce the conversion between a unipolar semiconductor and a bipolar (unipolar) half-metal. These results provide a possible route to realize nanoscale multifunctional spintronic devices based on 2D multiferroic systems.

Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr2Ge2Te6

Monolayer Cr₂Ge₂Te₆ (ML-CGT) has attracted broad interest due to its novel electronic and magnetic properties. However, there are still controversies on the origin of its intrinsic magnetism. Here, by exploring the electronic and magnetic properties of ML-CGT, we find that the magnetic shape anisotropy (MSA) is vital for establishing the long-range ferromagnetism, except for the contribution from magnetocrystalline anisotropy energy (MCA). Electronic band analysis, combined with atomic- and orbital-resolved magnetic anisotropy from a second-order perturbation theory, further reveals that the MCA of ML-CGT is mainly originated from hybridized Te-p_y and -p_z orbitals. The MSA from magnetic Cr atoms in ML-CGT is larger than MCA, resulting in an in-plane magnetic anisotropy. Noticeably, by constructing a heterostructure (HTS) with ferroelectric Sc₂CO₂, CGT undergoes an in-plane to out-of-plane spin reorientation via ferroelectric polarization switching, accompanied with an electronic property transition from semiconductor to half-metal. The Curie temperature of CGT/Sc₂CO₂ HTS can be enhanced to 92.4 K under the ferroelectric polarization, which is much higher than that of pristine ML-CGT (34.7 K). These results not only clarify the contradiction of magnetic mechanism of ML-CGT in previous experimental and theoretical works, but also open the door for realizing nonvolatile magnetic memory devices based on a multifunctional ferromagnetic/ferroelectric HTS.

Tunable magnetoelectric coupling and electrical features in an ultrathin Cr2Si2Te6/In2Se3 heterostructure

Two-dimensional (2D) van der Waals (vdW) heterostructures based on multiferroic materials have potential applications in novel low-dimensional spintronic devices. In this work, we have investigated a strong magnetoelectric coupling and electrical dependence between single layer (1L) Cr₂Si₂Te₆ and In₂Se₃. By switching the direction of ferroelectric polarization in In₂Se₃, we observed a significant magneto-crystalline anisotropy energy (MAE) enhancement of Cr₂Si₂Te₆. The analysis of the spin-resolved orbital-decomposed band structure shows stronger magnetoelectric coupling between the In₂Se₃ and Cr₂Si₂Te₆ layers. The modulation of the electrical features could also be achieved in the switching of the ferroelectric polarization. Furthermore, the switching of Ohmic-Schottky contacts in the heterojunction with different polarization states was successfully achieved under the effect of strain engineering. Based on these findings, we design a novel 2D ferroelectric-ferromagnetic heterojunction that exploits the controllability and nonvolatility of ferroelectrics to modulate the electrical properties of the device. These findings indicate the high application potential of Cr₂Si₂Te₆/In₂Se₃ multiferroic heterojunctions in spintronics.

Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications

Two-dimensional (2D) van der Waals (vdW) magnetic materials are considered to be ideal candidates for the fabrication of spintronic devices because of their low dimensionality, allowing the quantization of electronic states and more degrees of freedom for device modulation. With the discovery of few-layer Cr2Ge2Te6 and monolayer CrI3 ferromagnets, the magnetism of 2D vdW materials is becoming a research focus in the fields of material science and physics. In theory, taking the Heisenberg model with finite-range exchange interactions as an example, low dimensionality and ferromagnetism are in competition. In other words, it is difficult for 2D materials to maintain their magnetism. However, the introduction of anisotropy in 2D magnetic materials enables the realization of long-range ferromagnetic order in atomically layered materials, which may offer new effective means for the design of 2D ferromagnets with high Curie temperature. Herein, current advances in the field of 2D vdW magnetic crystals, as well as intrinsic and induced ferromagnetism or antiferromagnetism, physical properties, device fabrication, and potential applications, are briefly summarized and discussed.

Large perpendicular magnetic anisotropy of transition metal dimers driven by polarization switching of two-dimensional ferroelectric In2Se3 substrate

Large perpendicular magnetic anisotropy (MA) is highly desirable for realizing atomic-scale magnetic data storage which represents the ultimate limit of the density of magnetic recording. In this work, we study...

2D Magnetic Heterostructures and Their Interface Modulated Magnetism

In recent years, two-dimensional (2D) magnetic heterostructures have captured widespread interest as they provide a fertile ground for exploring the novel properties induced by interfacial magnetic coupling, modulating the intrinsic magnetism of the 2D magnet, and exploiting new spintronic device applications. In this Spotlight on Applications, dominating synthetic strategies employed to fabricate 2D magnetic heterostructures are introduced first. Notably, we then concentrate on two different kinds of magnetic interfaces, namely, the magnetic-nonmagnetic interface and the magnetic-magnetic interface. Specifically, various interface modulated magnetisms such as valley splitting and the anomalous Hall effect as well as their related device applications such as magnetic tunnel junctions have been further reviewed and discussed. Finally, we briefly summarize the recent progress of 2D magnetic heterostructures and outline the future development direction of this booming field.

Nonvolatile magnetoelectric coupling in two-dimensional ferromagnetic-bilayer/ferroelectric van der Waals heterostructures

One of the promising research topics on two-dimensional (2D) van der Waals (vdW) material based devices is the nonvolatile electrical control of magnetism. Usually, it is very hard to tune ferromagnetic or antiferromagnetic ordering by ferroelectric polarization due to strong exchange coupling. The existence of vdW layer spacing, however, which is ubiquitous in 2D materials, makes interlayer magnetic exchange coupling much weaker than interlayer coupling. In this work, we design a multiferroic heterostructure composed of a CrOBr ferromagnetic bilayer and an In₂Se₃ ferroelectric monolayer. The weaker interlayer exchange coupling of the CrOBr bilayer makes it easier to be regulated by ferroelectric polarization, enabling reversible nonvolatile electric control of shifts between ferromagnetic and antiferromagnetic ordering. The unique electrically controlled interlayer magnetic coupling for tuning the overall magnetism may be available for the practical application of 2D vdW bilayer magnets in high-sensitivity sensors and high-density data storage.

Interface-induced transition from Schottky-to-Ohmic contact in Sc2CO2-based multiferroic heterojunctions

In order to achieve a multiferroic heterojunction with a low resistance contact, we investigated a series of Sc2CO2-based van der Waals (vdW) multiferroic heterojunctions in which the ferromagnetics (1T-MnSe2, 1T-VSe2, and 1T-VTe2) were selected as the contact electrodes in terms of first-principles calculations. By reversing the polarization state of Sc2CO2 from Sc-P↑ to Sc-P↓, we found that the heterojunctions converted from Schottky-to-Ohmic contact. Moreover, this conversion, accompanied by an interface charge transfer is intrinsic and is not regulated by the interlayer spacing and biaxial strain. This work provides an avenue for the design of two-dimensional Sc2CO2-based multiferroic electronics in the future.

Heterobilayer with Ferroelectric Switching of Topological State

The realization of multifunctional nanomaterials is both fundamentally intriguing and practically appealing to be used in nanoscale devices. Here, a heterobilayer consisting of realistic 2D-material components of matching lattice symmetry, that is, one being the β-phase antimonene β-Sb known for its strong spin-orbit coupling and ferroelectric In₂Se₃ monolayer, is designed and explored with first-principles density functional theory. The ferroelectric polarization of the In₂Se₃ layer induces distinctly different electronic properties in the bilayer. With polarization directed "inward", the bilayer is a trivial insulator with spatially-indirect band gap (potentially beneficial for photovoltaics). Surprisingly, when polarized "outward", the bilayer displays nontrivial topological state, Z₂ = 1. This suggests that the external electric field can reversibly switch between these two states, inviting potential applications in future multifunctional devices.

Controlling bimerons as skyrmion analogues by ferroelectric polarization in 2D van der Waals multiferroic heterostructures

Atom-thick van der Waals heterostructures with nontrivial physical properties tunable via the magnetoelectric coupling effect are highly desirable for the future advance of multiferroic devices. In this work on LaCl/In₂Se₃ heterostructure consisting of a 2D ferromagnetic layer and a 2D ferroelectric layer, reversible switch of the easy axis and the Curie temperature of the magnetic LaCl layer has been enabled by switching of ferroelectric polarization in In₂Se₃. More importantly, magnetic skyrmions in the bimerons form have been discovered in the LaCl/In₂Se₃ heterostructure and can be driven by an electric current. The creation and annihilation of bimerons in LaCl magnetic nanodisks were achieved by polarization switching. It thus proves to be a feasible approach to achieve purely electric control of skyrmions in 2D van der Waals heterostructures. Such nonvolatile and tunable magnetic skyrmions are promising candidates for information carriers in future data storage and logic devices operated under small electrical currents.

Ferroelectricity and phase transitions in In2Se3 van der Waals material

van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through a comprehensive study on the layer-dependent electronic structure, ferroelectricity and the inter-layer interaction of α-In2Se3, by using first-principles density functional theory. Furthermore, surface states and their response to the built-in internal depolarizing field were carefully analyzed. Phase transition and Curie temperatures of 1L α-In2Se3 were studied by employing Monte Carlo and ab initio molecular dynamics simulations. The estimated Curie point is above room temperature, making 1L α-In2Se3 a promising candidate for future ultra-thin ferroelectric devices.

Prediction of two-dimensional antiferromagnetic ferroelasticity in an AgF2 monolayer

Two-dimensional multiferroics, simultaneously harboring antiferromagneticity and ferroelasticity, are essential and highly sought for miniaturized device applications, such as high-density data storage, but thus far they have rarely been explored. Herein, using first principles calculations, we identified two-dimensional antiferromagnetic ferroelasticity in an AgF₂ monolayer that is dynamically and thermally stable, and can be easily fabricated from its bulk. The AgF₂ monolayer is an antiferromagnetic semiconductor with large spin polarization, and with great structural distortion due to its intrinsic Jahn-Teller effect when thinning the AgF₂ down to a monolayer. Additionally, it features excellent ferroelasticity with high transition signal and a low switching barrier, rendering the room-temperature nonvolatile memory accessible. Such coexistence of antiferromagneticity and ferroelasticity is of great significance to the study of two-dimensional multiferroics and also renders the AgF₂ monolayer a promising platform for future multifunctional device applications.

Ferroelectrically tunable magnetism in BiFeO3/BaTiO3 heterostructure revealed by the first-principles calculations

The perovskite oxide interface has attracted extensive attention as a platform for achieving strong coupling between ferroelectricity and magnetism. In this work, robust control of magnetoelectric (ME) coupling in the BiFeO3/BaTiO3 (BFO/BTO) heterostructure (HS) was revealed by using the first-principles calculation. Switching of the ferroelectric polarization of BTO induce large ME effect with significant changes on the magnetic ordering and easy magnetization axis, making up for the weak ME coupling effect of single-phase multiferroic BFO. In addition, the Dzyaloshinskii-Moriya interaction (DMI) and the exchange coupling constants J for the BFO part of the HSs are simultaneously manipulated by the ferroelectric polarization, especially the DMI at the interface is significantly enhanced, which is three or four times larger than that of the individual BFO bulk. This work paves the way for designing new nanomagnetic devices based on the substantial interfacial ME effect.

de Souza FA, Paz WS, Scopel WL. Tuning the photocatalytic water-splitting capability of two-dimensional α-In2Se3 by strain-driven band gap engineering

In this work, we have investigated the effects of in-plane mechanical strains on the electronic properties of single-layer α-In₂Se₃ by means of density functional theory (DFT) calculations.

Tuning the magnetism of two-dimensional hematene by ferroelectric polarization

Magnetism in two-dimensional (2D) materials, that is, a 2D version of the magnetism of three-dimensional bulk materials, and the associated novel physics have recently been the focus of many spintronics researchers. Here we investigate the manipulation of 2D magnetism at the interfaces of ferromagnetic/ferroelectric hematene/BaTiO₃(001) heterostructures (HSs) fabricated via a precisely chosen sequence. By introducing four types of interfaces of 2D hematene and three-dimensional BaTiO₃ that induce different oxygen environments, the control of magnetism is directly demonstrated from first-principles. An obvious 2D electron gas originates from the Fe-3d and O-2p hybridization; the electron gas is sensitive to the interfacial atomic displacements. Robust control of both the direction and magnitude of the net magnetization has been realized for an Fe/TiO₂ terminated bilayer HS. The electron occupancies of the d_xy and d_xz orbitals and changes to the Fe-O bond play a key role in determining the magnetism of our systems. Our work not only demonstrates the technique's potential for manipulating magnetism in 2D hematene, but also sheds light on the underlying mechanism and the fundamental properties of hematene HSs.