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Ermolaev GA, Yakubovsky DI, El-Sayed MA, Tatmyshevskiy MK, Mazitov AB, Popkova AA, Antropov IM, Bessonov VO, Slavich AS, Tselikov GI, Kruglov IA, Novikov SM, Vyshnevyy AA, Fedyanin AA, Arsenin AV, Volkov VS. Broadband Optical Constants and Nonlinear Properties of SnS 2 and SnSe 2. NANOMATERIALS 2021; 12:nano12010141. [PMID: 35010091 PMCID: PMC8746438 DOI: 10.3390/nano12010141] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 12/24/2021] [Accepted: 12/28/2021] [Indexed: 11/16/2022]
Abstract
SnS2 and SnSe2 have recently been shown to have a wide range of applications in photonic and optoelectronic devices. However, because of incomplete knowledge about their optical characteristics, the use of SnS2 and SnSe2 in optical engineering remains challenging. Here, we addressed this problem by establishing SnS2 and SnSe2 linear and nonlinear optical properties in the broad (300-3300 nm) spectral range. Coupled with the first-principle calculations, our experimental study unveiled the full dielectric tensor of SnS2 and SnSe2. Furthermore, we established that SnS2 is a promising material for visible high refractive index nanophotonics. Meanwhile, SnSe2 demonstrates a stronger nonlinear response compared with SnS2. Our results create a solid ground for current and next-generation SnS2- and SnSe2-based devices.
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Affiliation(s)
- Georgy A. Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Dmitry I. Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Marwa A. El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Mikhail K. Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Arslan B. Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Anna A. Popkova
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Ilya M. Antropov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Vladimir O. Bessonov
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Aleksandr S. Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Gleb I. Tselikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Ivan A. Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya St., 127055 Moscow, Russia
| | - Sergey M. Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Andrey A. Fedyanin
- Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia; (A.A.P.); (I.M.A.); (V.O.B.); (A.A.F.)
| | - Aleksey V. Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
| | - Valentyn S. Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700 Dolgoprudny, Russia; (G.A.E.); (D.I.Y.); (M.A.E.-S.); (M.K.T.); (A.B.M.); (A.S.S.); (G.I.T.); (I.A.K.); (S.M.N.); (A.A.V.); (A.V.A.)
- Correspondence: or ; Tel.: +7-926-735-93-98
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Tao L, Yao B, Yue Q, Dan Z, Wen P, Yang M, Zheng Z, Luo D, Fan W, Wang X, Gao W. Vertically stacked Bi 2Se 3/MoTe 2 heterostructure with large band offsets for nanoelectronics. NANOSCALE 2021; 13:15403-15414. [PMID: 34499063 DOI: 10.1039/d1nr04281e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In recent years, two-dimensional material-based tunneling heterojunctions are emerging as a multi-functional architecture for logic circuits and photodetection owing to the flexible stacking, optical sensitivity, tunable detection band, and highly controllable conductivity behaviors. However, the existing structures are mainly focused on transition or post-transition metal chalcogenides and have been rarely investigated as topological insulator (such as Bi2Se3 or Bi2Te3)-based tunneling heterostructures. Meanwhile, it is challenging to mechanically exfoliate the topological insulator thin nanoflakes because of the strong layer-by-layer interaction with shorter interlayer spacing. Herein, we report Au-assisted exfoliation and non-destructive transfer method to fabricate large-scale Bi2Se3 thin nanosheets. Furthermore, a novel broken-gap tunneling heterostructure is designed by combing 2H-MoTe2 and Bi2Se3via the dry-transfer method. Thanks to the realized band alignment, this ambipolar-n device shows a clear rectifying behavior at Vds of 1 V. A built-in potential exceeding ∼0.7 eV is verified owing to the large band offsets by comparing the numerical solution of Poisson's equation and the experimental data. Carrier transport is governed by the majority carrier including thermionic emission and the tunneling process through the barrier height. At last, the device shows an ultralow dark current of ∼0.2 pA and a superior optoelectrical performance of Ilight/Idark ratio ≈106, a fast response time of 21 ms, and a specific detectivity of 7.2 × 1011 Jones for a visible light of 405 nm under zero-bias. Our work demonstrates a new universal method to fabricate a topological insulator and paves a new strategy for the construction of novel van der Waals tunneling structures.
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Affiliation(s)
- Lin Tao
- State Key Lab of Superhard Material, and College of Physics, Jilin University, Changchun 130012, P. R. China.
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Bin Yao
- State Key Lab of Superhard Material, and College of Physics, Jilin University, Changchun 130012, P. R. China.
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun, 130012, P. R. China
| | - Qian Yue
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Zhiying Dan
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Mengmeng Yang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Dongxiang Luo
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Weijun Fan
- School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
| | - Xiaozhou Wang
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China.
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Liu W, Gu D, Li X. AuPt Bimetal-Functionalized SnSe 2 Microflower-Based Sensors for Detecting Sub-ppm NO 2 at Low Temperatures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:20336-20348. [PMID: 33900063 DOI: 10.1021/acsami.1c02500] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A novel chemiresistive-type sensor for detecting sub-ppm NO2 has been fabricated using AuPt bimetal-decorated SnSe2 microflowers, which was synthesized by the hydrothermal treatment followed by in situ chemical reduction of the bimetal precursors on the surface of the petals of the microflowers. The as-prepared sensor registers a superior performance in detection of sub-ppm concentration of NO2. Functionalized by the AuPt bimetal, the SnSe2 microflower-based sensor shows a response of approximately 4.62 to 8 ppm NO2 at 130 °C. It is significantly higher than those of the sensors using the pristine SnSe2 (∼2.29) and the modified SnSe2 samples by a single metal, either Au (∼3.03) or Pt (∼3.97). The sensor demonstrates excellent long-term stability, signal repeatability, and selectivity to some typical interfering gaseous species including ammonia, acetone, formaldehyde, ethanol, methanol, benzene, CO2, SO2, and CO. The remarkable improvement of the sensitive characteristics could be induced by the electronic and chemical sensitization and the synergistic effect of the AuPt bimetal. Density functional theory (DFT) is implemented to calculate the adsorption states of NO2 on the sensing materials and thus to possibly reveal the sensing mechanism. The significantly enhanced response of the SnSe2-based sensor decorated with AuPt bimetallic nanoparticles has been found to be possibly caused by the orbital hybridization of O, Au, and Pt atoms leading to the redistribution of electrons, which is beneficial for NO2 molecules to obtain more electrons from the composite material.
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Affiliation(s)
- Wei Liu
- School of Microelectronics, Key Laboratory of Liaoning for Integrated Circuits Technology, Dalian University of Technology, Dalian, Liaoning 116024, P. R. China
| | - Ding Gu
- School of Microelectronics, Key Laboratory of Liaoning for Integrated Circuits Technology, Dalian University of Technology, Dalian, Liaoning 116024, P. R. China
| | - Xiaogan Li
- School of Microelectronics, Key Laboratory of Liaoning for Integrated Circuits Technology, Dalian University of Technology, Dalian, Liaoning 116024, P. R. China
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Han L, Yang M, Wen P, Gao W, Huo N, Li J. A high performance self-powered photodetector based on a 1D Te-2D WS 2 mixed-dimensional heterostructure. NANOSCALE ADVANCES 2021; 3:2657-2665. [PMID: 36134149 PMCID: PMC9419060 DOI: 10.1039/d1na00073j] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Accepted: 03/14/2021] [Indexed: 05/21/2023]
Abstract
One-dimensional (1D)-two-dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of an atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. Herein, a mixed-dimensional vertical heterostructure is constructed by transferring mechanically exfoliated 2D WS2 nanosheets on epitaxially grown 1D tellurium (Te) microwires. According to the theoretical type-II band alignment, the device exhibits a photovoltaic effect and serves as an excellent self-powered photodetector with a maximum open-circuit voltage (V oc) up to ∼0.2 V. Upon 635 nm light illumination, the photoresponsivity, external quantum efficiency and detectivity of the self-powered photodetector (SPPD) are calculated to be 471 mA W-1, 91% and 1.24 × 1012 Jones, respectively. Moreover, the dark current of the SPPD is highly suppressed to the sub-pA level due to the large lateral built-in electric field, which leads to a high I light/I dark ratio of 104 with a rise time of 25 ms and decay time of 14.7 ms. The abovementioned properties can be further enhanced under a negative bias of -2 V. In brief, the 1D Te-2D WS2 mixed-dimensional heterostructures have great application potential in high performance photodetectors and photovoltaics.
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Affiliation(s)
- Lixiang Han
- School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Mengmeng Yang
- School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 China
| | - Peiting Wen
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Nengjie Huo
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University Guangzhou 510631 P.R. China
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Kumar M, Rani S, Singh Y, Gour KS, Singh VN. Tin-selenide as a futuristic material: properties and applications. RSC Adv 2021; 11:6477-6503. [PMID: 35423185 PMCID: PMC8694900 DOI: 10.1039/d0ra09807h] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Accepted: 12/26/2020] [Indexed: 12/14/2022] Open
Abstract
SnSe/SnSe2 is a promising versatile material with applications in various fields like solar cells, photodetectors, memory devices, lithium and sodium-ion batteries, gas sensing, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap. In this review, all possible applications of SnSe/SnSe2 have been summarized. Some of the basic properties, as well as synthesis techniques have also been outlined. This review will help the researcher to understand the properties and possible applications of tin selenide-based materials. Thus, this will help in advancing the field of tin selenide-based materials for next generation technology.
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Affiliation(s)
- Manoj Kumar
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Sanju Rani
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Yogesh Singh
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
| | - Kuldeep Singh Gour
- Optoelectronics Convergence Research Center, Chonnam National University Gwangju 61186 Republic of Korea
| | - Vidya Nand Singh
- Academy of Scientific and Innovative Research (AcSIR), CSIR- Human Resource Development Centre, (CSIR-HRDC) Campus Ghaziabad Uttar Pradesh 201002 India
- Indian Reference Materials (BND) Division, National Physical Laboratory, Council of Scientific and Industrial Research (CSIR) Dr K. S. Krishnan Road New Delhi 110012 India
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Chen G, Zhang J, Wang H, Yuan H, Sui X, Zhou H, Zhong D. Fast colloidal synthesis of SnSe 2 nanosheets for flexible broad-band photodetection. CrystEngComm 2021. [DOI: 10.1039/d0ce01774d] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
A new rapid bottom-up colloidal synthetic route has been developed to synthesize SnSe2 nanosheets within 5 min. A SnSe2 nanosheet-based flexible photodetector is fabricated for the first time and the resulting device displays a wide photodetection range and high flexibility.
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Affiliation(s)
- Guihuan Chen
- College of Materials Science and Engineering
- Qingdao University
- Qingdao 266071
- China
| | - Jinhui Zhang
- Hefei National Laboratory for Physical Sciences at Microscale
- Department of Chemistry
- Laboratory of Nanomaterials for Energy Conversion
- University of Science and Technology of China (USTC)
- Hefei
| | - Hongrui Wang
- Hefei National Laboratory for Physical Sciences at Microscale
- Department of Chemistry
- Laboratory of Nanomaterials for Energy Conversion
- University of Science and Technology of China (USTC)
- Hefei
| | - Hua Yuan
- College of Materials Science and Engineering
- Qingdao University
- Qingdao 266071
- China
| | - Xin Sui
- College of Materials Science and Engineering
- Qingdao University
- Qingdao 266071
- China
| | - Hao Zhou
- College of Materials Science and Engineering
- Qingdao University
- Qingdao 266071
- China
| | - Degao Zhong
- College of Physical Sciences
- Qingdao University
- Qingdao 266071
- China
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Abstract
Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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