1
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Jin J, Lv F, Cao W, Wang Z. First-Principles Study of Doped CdX( X = Te, Se) Compounds: Enhancing Thermoelectric Properties. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1797. [PMID: 38673157 PMCID: PMC11051371 DOI: 10.3390/ma17081797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 04/04/2024] [Accepted: 04/04/2024] [Indexed: 04/28/2024]
Abstract
Isovalent doping offers a method to enhance the thermoelectric properties of semiconductors, yet its influence on the phonon structure and propagation is often overlooked. Here, we take CdX (X=Te, Se) compounds as an example to study the role of isovalent doping in thermoelectrics by first-principles calculations in combination with the Boltzmann transport theory. The electronic and phononic properties of Cd8Se8, Cd8Se7Te, Cd8Te8, and Cd8Te7Se are compared. The results suggest that isovalent doping with CdX significantly improves the thermoelectric performance. Due to the similar properties of Se and Te atoms, the electronic properties remain unaffected. Moreover, doping enhances anharmonic phonon scattering, leading to a reduction in lattice thermal conductivity. Our results show that optimized p-type(n-type) ZT values can reach 3.13 (1.33) and 2.51 (1.21) for Cd8Te7Se and Cd8Se7Te at 900 K, respectively. This research illuminates the potential benefits of strategically employing isovalent doping to enhance the thermoelectric properties of CdX compounds.
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Affiliation(s)
- Junfeng Jin
- The Institute of Technological Sciences, Wuhan University, Wuhan 430060, China;
| | - Fang Lv
- Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China;
| | - Wei Cao
- The Institute of Technological Sciences, Wuhan University, Wuhan 430060, China;
- Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China;
| | - Ziyu Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430060, China;
- Key Laboratory of Artificial Micro- and Nano- Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China;
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2
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Choi M, An J, Lee H, Jang H, Park JH, Cho D, Song JY, Kim SM, Oh MW, Shin H, Jeon S. High figure-of-merit for ZnO nanostructures by interfacing lowly-oxidized graphene quantum dots. Nat Commun 2024; 15:1996. [PMID: 38485943 PMCID: PMC10940299 DOI: 10.1038/s41467-024-46182-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 02/15/2024] [Indexed: 03/18/2024] Open
Abstract
Thermoelectric technology has potential for converting waste heat into electricity. Although traditional thermoelectric materials exhibit extremely high thermoelectric performances, their scarcity and toxicity limit their applications. Zinc oxide (ZnO) emerges as a promising alternative owing to its high thermal stability and relatively high Seebeck coefficient, while also being earth-abundant and nontoxic. However, its high thermal conductivity (>40 W m-1K-1) remains a challenge. In this study, we use a multi-step strategy to achieve a significantly high dimensionless figure-of-merit (zT) value of approximately 0.486 at 580 K (estimated value) by interfacing graphene quantum dots with 3D nanostructured ZnO. Here, we show the fabrication of graphene quantum dots interfaced 3D ZnO, yielding the highest zT value ever reported for ZnO counterparts; specifically, our experimental results indicate that the fabricated 3D GQD@ZnO exhibited a significantly low thermal conductivity of 0.785 W m-1K-1 (estimated value) and a remarkably high Seebeck coefficient of - 556 μV K-1 at 580 K.
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Affiliation(s)
- Myungwoo Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Juyoung An
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Hyejeong Lee
- Division of Chemical and Material Metrology, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
| | - Ji Hong Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk, 55324, Republic of Korea
| | - Donghwi Cho
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon, 34114, Republic of Korea
- Advanced Materials and Chemical Engineering, University of Science and Technology, Daejeon, 34113, Republic of Korea
| | - Jae Yong Song
- Department of Semiconductor Engineering, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea
| | - Seung Min Kim
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk, 55324, Republic of Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea
| | - Hosun Shin
- Division of Chemical and Material Metrology, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea.
| | - Seokwoo Jeon
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.
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3
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van Ginkel HJ, Mitterhuber L, van de Putte MW, Huijben M, Vollebregt S, Zhang G. Nanostructured Thermoelectric Films Synthesised by Spark Ablation and Their Oxidation Behaviour. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111778. [PMID: 37299681 DOI: 10.3390/nano13111778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Revised: 05/27/2023] [Accepted: 05/29/2023] [Indexed: 06/12/2023]
Abstract
Reducing the thermal conductivity of thermoelectric materials has been a field of intense research to improve the efficiency of thermoelectric devices. One approach is to create a nanostructured thermoelectric material that has a low thermal conductivity due to its high number of grain boundaries or voids, which scatter phonons. Here, we present a new method based on spark ablation nanoparticle generation to create nanostructured thermoelectric materials, demonstrated using Bi2Te3. The lowest achieved thermal conductivity was <0.1 W m-1 K-1 at room temperature with a mean nanoparticle size of 8±2 nm and a porosity of 44%. This is comparable to the best published nanostructured Bi2Te3 films. Oxidation is also shown to be a major issue for nanoporous materials such as the one here, illustrating the importance of immediate, air-tight packaging of such materials after synthesis and deposition.
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Affiliation(s)
- Hendrik Joost van Ginkel
- Department of Microelectronics, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands
| | | | | | - Mark Huijben
- MESA+ Institute for Nanotechnology, University of Twente, 7522 NH Enschede, The Netherlands
| | - Sten Vollebregt
- Department of Microelectronics, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands
| | - Guoqi Zhang
- Department of Microelectronics, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, 2628 CD Delft, The Netherlands
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4
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Yang Y, He D, Zhou Y, Wen S, Huang H. Electronic and surface modulation of 2D MoS 2nanosheets for an enhancement on flexible thermoelectric property. NANOTECHNOLOGY 2023; 34:195401. [PMID: 36745908 DOI: 10.1088/1361-6528/acb94a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Accepted: 02/06/2023] [Indexed: 06/18/2023]
Abstract
Two-dimensional materials have potential applications for flexible thermoelectric materials because of their excellent mechanical and unique electronic transport properties. Here we present a functionalization method by a Lewis acid-base reaction to modulate atomic structure and electronic properties at surface of the MoS2nanosheets. By AlCl3solution doping, the lone pair electronics from S atoms would enter into the empty orbitals of Al3+ions, which made the Fermi level of the 1T phase MoS2move towards valence band, achieving a 1.8-fold enhancement of the thermoelectric power factor. Meanwhile, benefiting from the chemical welding effect of Al3+ions, the mechanical flexibility of the nanosheets restacking has been improved. We fabricate a wearable thermoelectric wristband based on this improved MoS2nanosheets and achieved 5 mV voltage output when contacting with human body. We think this method makes most of the transition metal chalcogenides have great potential to harvest human body heat for supplying wearable electronic devices due to their similar molecular structure.
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Affiliation(s)
- Yaocheng Yang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Dunren He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yuan Zhou
- School of Microelectronics and Physics, Hunan University of Technology and Business, Changsha 410205, People's Republic of China
| | - Shuangchun Wen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Huihui Huang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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5
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Li S, Zhao W, Cheng Y, Chen L, Xu M, Guo K, Pan F. Thermoelectric Performance Enhancement in Commercial Bi 0.5Sb 1.5Te 3 Materials by Introducing Gradient Cu-Doped Grain Boundaries. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1167-1174. [PMID: 36546598 DOI: 10.1021/acsami.2c18575] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Modulated doping has always been a conventional and effective way to optimize thermoelectric (TE) materials. Unfavorably, the efficiency of conventional doping is always restricted by the strong interdependence of thermoelectric parameters. Here, an unconventional grain boundary doping strategy is reported to solve the above problem using commercial p-type Bi0.5Sb1.5Te3 as matrix materials. Decoupling of the three key TE parameters and large net get of the figure of merit (ZT) could be achieved in Bi0.5Sb1.5Te3 materials by introducing the gradient Cu-doped grain boundary. A high ZT of ∼1.40 at 350 K and a superior average ZT of ∼1.24 (300-475 K) are obtained in the as-prepared samples, projecting a maximum conversion efficiency of ∼8.25% at ΔT = 200 K, which are considerably greater than those of the commercial Bi0.5Sb1.5Te3 matrix and the traditional Cu-doped Bi0.5Sb1.5Te3 sample. This study gives deep insights to understand the relationships between the microstructure and the carrier/phonon transport behaviors and promotes a new strategy for improving the thermoelectric performance of commercial p-type Bi0.5Sb1.5Te3 materials.
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Affiliation(s)
- Shuankui Li
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Wenguang Zhao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Yajuan Cheng
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Lei Chen
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Mengxin Xu
- Institute of Modern Physics, Chinese Science Academy, Nanchang RD 509, Lanzhou, Gansu 730030, China
| | - Kai Guo
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, PR China
| | - Feng Pan
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
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6
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Wang W, Li Q, Yang J. High thermoelectric figure of merit in rhombic porous carbon nitride nanoribbons. J CHIN CHEM SOC-TAIP 2022. [DOI: 10.1002/jccs.202200359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Weiyi Wang
- Department of Chemical Physics & Hefei National Research Center for Physical Sciences at Microscale University of Science and Technology of China Hefei China
| | - Qunxiang Li
- Department of Chemical Physics & Hefei National Research Center for Physical Sciences at Microscale University of Science and Technology of China Hefei China
| | - Jinlong Yang
- Department of Chemical Physics & Hefei National Research Center for Physical Sciences at Microscale University of Science and Technology of China Hefei China
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7
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Wang YL, Chen TH, Giri K, Chen CH. Periodic DLC Interlayer-Functionalized Bi-Sb-Te-Based Nanostructures: A Novel Concept for Building Heterogenized Superarchitectures with Enhanced Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9307-9317. [PMID: 35148074 DOI: 10.1021/acsami.1c23206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
According to the innovative design concept of omnidirectional quasi-order hetero-nanocomposites proposed for potentially realizing high thermoelectric performance, a series of superarchitectures consisting of longitudinally periodic diamond-like carbon (DLC) interlayers in latitudinally well-aligned Bi-Sb-Te (BST)-based nanostructures were successfully demonstrated for the first time using dual-beam pulsed laser deposition. This work confirmed that the periodic appearance of DLC is a practical approach to instantly resetting the BST deposition into another new crystal growth cycle. The optimized Seebeck coefficient of ∼500 μV K-1 and the corresponding power factor of ∼40 μW cm-1 K-2 achieved are comparable to or higher than the reported values for BST or BST-based nanocomposites, which evidently originated from the periodically added DLC, as clarified in the Pisarenko plot. In addition, the DLC additives effectively reduce the thermal transport as qualitatively evidenced by micro-Raman characterizations.
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Affiliation(s)
- Yan-Lin Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010 Taiwan, ROC
| | - Tsung-Han Chen
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010 Taiwan, ROC
| | - Karan Giri
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010 Taiwan, ROC
| | - Chun-Hua Chen
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010 Taiwan, ROC
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8
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Yalameha S, Nourbakhsh Z, Vashaee D. Topological phase and thermoelectric properties of bialkali bismuthide compounds (Na, K) 2RbBi from first-principles. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:105702. [PMID: 34905744 DOI: 10.1088/1361-648x/ac431d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2021] [Accepted: 12/14/2021] [Indexed: 06/14/2023]
Abstract
We report the topological phase and thermoelectric properties of bialkali bismuthide compounds (Na, K)2RbBi, as yet hypothetical. The topological phase transitions of these compounds under hydrostatic pressure are investigated. The calculated topological surface states andZ2topological index confirm the nontrivial topological phase. The electronic properties and transport coefficients are obtained using the density functional theory combined with the Boltzmann transport equation. The relaxation times are determined using the deformation potential theory to calculate the electronic thermal and electrical conductivity. The calculated mode Grüneisen parameters are substantial, indicating strong anharmonic acoustic phonons scattering, which results in an exceptionally low lattice thermal conductivity. These compounds also have a favorable power factor leading to a relatively flat p-type figure-of-merit over a broad temperature range. Furthermore, the mechanical properties and phonon band dispersions show that these structures are mechanically and dynamically stable. Therefore, they offer excellent candidates for practical applications over a wide range of temperatures.
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Affiliation(s)
- Shahram Yalameha
- Faculty of Physics, University of Isfahan, 81746-73441, Isfahan, Iran
| | - Zahra Nourbakhsh
- Faculty of Physics, University of Isfahan, 81746-73441, Isfahan, Iran
| | - Daryoosh Vashaee
- Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27606, United States of America
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27606, United States of America
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9
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Nag S, Singh R, Kumar R. Strain-induced enhancement in the electronic and thermal transport properties of the tin sulphide bilayer. Phys Chem Chem Phys 2021; 24:211-221. [PMID: 34878461 DOI: 10.1039/d1cp03988a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The enhancement in the thermoelectric figure of merit (ZT) of a material is limited by the interplay between the electronic transport coefficients. Here we report the greatly enhanced thermoelectric performance of the SnS bilayer with the application of isotropic strain, due to the simultaneous increase in the Seebeck coefficient and low lattice thermal conductivities. Based on first-principles calculations combined with Boltzmann transport theory, we predict that the band structure of the SnS bilayer can be effectively tuned using the strain, and the Seebeck coefficient is significantly improved for the tensile strain. The lattice thermal conductivities for the bilayer under the tensile strain are quite low (0.21-1.89 W m-1 K-1 at 300 K) due to the smaller frequencies of the acoustic phonon modes. Along the zigzag (armchair) direction, the room temperature peak ZT value of 4.96 (2.40) is obtained at a strain of 2% (4%), which is 5.3 (2.03) times higher than the peak ZT of the unstrained bilayer along the zigzag (armchair) direction. Thus the strain-tuned SnS bilayer is a good thermoelectric material with low lattice thermal conductivities and promising ZT values at room temperature.
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Affiliation(s)
- Shagun Nag
- Department of Physics, Panjab University, Chandigarh, India.
| | - Ranber Singh
- Department of Physics, Sri Guru Gobind Singh College, Chandigarh, India
| | - Ranjan Kumar
- Physics Department, Faculty of Science, King Abdulaziz University, P. O. Box 80203, Jeddah 21589, Saudi Arabia.,Department of Physics, Panjab University, Chandigarh, India.
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10
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Li S, Huang Z, Wang R, Zhao W, Luo J, Xiao Y, Pan F. Highly Distorted Grain Boundary with an Enhanced Carrier/Phonon Segregation Effect Facilitates High-Performance Thermoelectric Materials. ACS APPLIED MATERIALS & INTERFACES 2021; 13:51018-51027. [PMID: 34696584 DOI: 10.1021/acsami.1c15422] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Grain boundary plays an important role in determining the phonon/carrier transport behaviors of thermoelectric (TE) materials, especially for the polycrystalline materials with the average grain size in nanoscale dimensions. Adjusting the grain size and boundaries of TE materials is considered as an effective approach to decouple TE parameters and thereby synergistically optimize the TE performance. Here, the highly distorted grain boundary with an enhanced carrier/phonon segregation effect is introduced to the commercial n-type Bi2Te2.7Se0.3 matrix. The existence of highly distorted grain boundaries can not only enhance the interfacial Seebeck coefficient without significant detriment to the electrical conductivity but also increase the interfacial thermal resistance of grain boundaries, leading to the synergistic reduction of the thermal conductivity. As a result, a peak figure of merit zTmax ≈ 1.22@425 K and an average zTavg ≈ 1.1(300-500 K) are obtained, which are about 55 and 57% higher than the corresponding values of the commercial Bi2Te2.7Se0.3 matrix, respectively. This work represents a new avenue for improving the commercial Bi2Te2.7Se0.3 TE material, which could further promote the development of the TE technology.
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Affiliation(s)
- Shuankui Li
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Zhongyuan Huang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Rui Wang
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Wenguang Zhao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Jun Luo
- School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Yinguo Xiao
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
| | - Feng Pan
- School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China
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11
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Revisiting the Electronic Structures and Phonon Properties of Thermoelectric Antimonide-Tellurides: Spin–Orbit Coupling Induced Gap Opening in ZrSbTe and HfSbTe. CRYSTALS 2021. [DOI: 10.3390/cryst11080917] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
We report theoretical studies based on density functional theory within spin-orbit coupling to explore electronic structures, lattice dynamical properties of ZrSbTe and HfSbTe. With spin−orbit coupling included, our findings reveal that ZrSbTe and HfSbTe exhibit a semiconducting behavior with narrow indirect band gaps of 0.10 eV, and 0.15 eV, respectively. Besides, the lattice dynamical properties revealed that the explored materials based on antimonide−tellurides are dynamically stable. On the basis of electronic structures, the thermoelectric properties were computed using the Landauer-Buttiker formula by considering both electron and phonon contributions in the transport properties calculation. We employed Green’s-function method based on the Green-Kubo-Mori formula, where the thermoelectric properties such as the electrical conductivity σ and thermopower α were estimated in terms of the correlation functions. The present work could be viewed as a significant amendment of the electronic nature of ZrSbTe and HfSbTe that were reported to be metallic in literature.
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12
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Choi M, Novak TG, Byen J, Lee H, Baek J, Hong S, Kim K, Song J, Shin H, Jeon S. Significantly Enhanced Thermoelectric Performance of Graphene through Atomic-Scale Defect Engineering via Mobile Hot-Wire Chemical Vapor Deposition Systems. ACS APPLIED MATERIALS & INTERFACES 2021; 13:24304-24313. [PMID: 33983698 DOI: 10.1021/acsami.1c04828] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Over the years, numerous studies have attempted to develop two-dimensional (2D) materials for improving both the applicability and performance of thermoelectric devices. Among the 2D materials, graphene is one of the promising candidates for thermoelectric materials owing to its extraordinary electrical properties, flexibility, and nontoxicity. However, graphene synthesized through traditional methods suffers from a low Seebeck coefficient and high thermal conductivity, resulting in an extremely low thermoelectric figure of merit (ZT). Here, we present an atomic-scale defect engineering strategy to improve the thermoelectric properties of graphene using embedded high-angle tilt boundary (HATB) domains in graphene films. These HATB domains serve as both energy filtering sites to filter out lower-energy charge carriers and scattering sites for phonons. Compared to the conventionally grown chemical vapor deposited graphene, the graphene with HATB domains shows an improved Seebeck coefficient (50.1 vs 21.1 μV K-1) and reduced thermal conductivity (382 vs 952 W m-1K-1), resulting in a ZT value that is ∼7 times greater at 350 K. This defect engineering strategy is promising not only for graphene-based materials but also for 2D materials, in general, where further research and optimization could overcome the limitations of conventional bulk thermoelectric materials in energy-harvesting systems.
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Affiliation(s)
- Myungwoo Choi
- Department of Materials Science and Engineering, KAIST Institute for the Nanocentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Travis G Novak
- Department of Materials Science and Engineering, KAIST Institute for the Nanocentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Jicheol Byen
- Department of Nano Science, University of Science and Technology (UST), Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Hyejeong Lee
- Center for Convergence Property Measurement, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Jinwook Baek
- Department of Materials Science and Engineering, KAIST Institute for the Nanocentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Seouggu Hong
- Department of Nano Science, University of Science and Technology (UST), Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Kisun Kim
- Department of Materials Science and Engineering, KAIST Institute for the Nanocentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Jaeyong Song
- Center for Convergence Property Measurement, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Hosun Shin
- Center for Convergence Property Measurement, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Republic of Korea
| | - Seokwoo Jeon
- Department of Materials Science and Engineering, KAIST Institute for the Nanocentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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13
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Zhu Q, Wang S, Wang X, Suwardi A, Chua MH, Soo XYD, Xu J. Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials. NANO-MICRO LETTERS 2021; 13:119. [PMID: 34138379 PMCID: PMC8093352 DOI: 10.1007/s40820-021-00637-z] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2020] [Accepted: 01/22/2021] [Indexed: 05/02/2023]
Abstract
The recent advancements in thermoelectric materials are largely credited to two factors, namely established physical theories and advanced materials engineering methods. The developments in the physical theories have come a long way from the "phonon glass electron crystal" paradigm to the more recent band convergence and nanostructuring, which consequently results in drastic improvement in the thermoelectric figure of merit value. On the other hand, the progresses in materials fabrication methods and processing technologies have enabled the discovery of new physical mechanisms, hence further facilitating the emergence of high-performance thermoelectric materials. In recent years, many comprehensive review articles are focused on various aspects of thermoelectrics ranging from thermoelectric materials, physical mechanisms and materials process techniques in particular with emphasis on solid state reactions. While bottom-up approaches to obtain thermoelectric materials have widely been employed in thermoelectrics, comprehensive reviews on summarizing such methods are still rare. In this review, we will outline a variety of bottom-up strategies for preparing high-performance thermoelectric materials. In addition, state-of-art, challenges and future opportunities in this domain will be commented.
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Affiliation(s)
- Qiang Zhu
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Suxi Wang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Xizu Wang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Ady Suwardi
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Ming Hui Chua
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Xiang Yun Debbie Soo
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore.
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
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14
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Khoso NA, Jiao X, GuangYu X, Tian S, Wang J. Enhanced thermoelectric performance of graphene based nanocomposite coated self-powered wearable e-textiles for energy harvesting from human body heat. RSC Adv 2021; 11:16675-16687. [PMID: 35479176 PMCID: PMC9032048 DOI: 10.1039/d0ra10783b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Accepted: 04/22/2021] [Indexed: 01/11/2023] Open
Abstract
The demand for highly flexible and self-powered wearable textile devices has increased in recent years. Graphene coated textile-based wearable devices have been used for energy harvesting and storage due to their outstanding mechanical, electrical and electronic properties. However, the use of metal based nanocomposites is limited in textiles, due to their poor bending, fixation, and binding on textiles. We present here reduced graphene oxide (rGO) as an n-type and conductive polymer poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a p-type material for a wearable thermoelectric nanogenerator (TEG) using a (pad-dry-cure) technique. We developed a reduced graphene oxide (rGO) coated textile-based wearable TEG for energy harvesting from low-grade human body heat. The conductive polymer (PEDOT:PSS) and (rGO) nanocomposite were coated using a layer by layer approach. The resultant fabric showed higher weight pickup of 60-80%. The developed textile based TEG device showed an enhanced Seebeck coefficient of (25-150 μV K-1), and a power factor of (2.5-60 μW m-1 K-1). The developed TE device showed a higher potential to convert the low-grade body heat into electrical energy, between the human body temperature of (36.5 °C) and an external environment of (20.0 ± 5 °C) with a temperature difference of (2.5-16.5 °C). The wearable textile-based TEG is capable of producing an open circuit output voltage of 12.5-119.5 mV at an ambient fixed temperature of (20 °C). The rGO coated textile fabric also showed reduced electrical sheet resistance by increasing the number of dyeing cycles (10) and increased with the number of (20) washing cycles. The developed reduced graphene oxide (rGO) coated electrodes showed a sheet resistance of 185-45 kΩ and (15 kΩ) for PEDOT:PSS-rGO nanocomposites respectively. Furthermore, the mechanical performance of the as coated textile fabric was enhanced from (20-80 mPa) with increasing number of padding cycles. The thermoelectric performance was significantly improved, without influencing the breath-ability and comfort properties of the resultant fabric. This study presents a promising approach for the fabrication of PEDOT:PSS/rGO nano-hybrids for textile-based wearable thermoelectric generators (TEGs) for energy harvesting from low-grade body heat.
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Affiliation(s)
- Nazakat Ali Khoso
- College of Materials and Textiles, Zhejiang Sci-Tech University Hangzhou Zhejiang PR China
| | - Xie Jiao
- College of Materials and Textiles, Zhejiang Sci-Tech University Hangzhou Zhejiang PR China
| | - Xu GuangYu
- College of Materials and Textiles, Zhejiang Sci-Tech University Hangzhou Zhejiang PR China
| | - Sun Tian
- Shanghai Institute of Ceramics, Chinese Academy Sciences (CAS) Shanghai PR China
| | - JiaJun Wang
- School of Art and Design, Zhejiang Sci-Tech University Hangzhou Zhejiang PR China
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15
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Bae G, Jang D, Jeon S. Scalable Fabrication of High-Performance Thin-Shell Oxide Nanoarchitected Materials via Proximity-Field Nanopatterning. ACS NANO 2021; 15:3960-3970. [PMID: 33591718 DOI: 10.1021/acsnano.0c10534] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Nanoarchitected materials are considered as a promising research field, deriving distinctive mechanical properties by combining nanomechanical size effects with conventional structural engineering. Despite the successful demonstration of the superiority and feasibility of nanoarchitected materials, scalable and facile fabrication techniques capable of macroscopically producing such materials at a low cost are required to take advantage of the nanoarchitected materials for specific applications. Unlike conventional techniques, proximity-field nanopatterning (PnP) is capable of simultaneously obtaining high spatial resolution and mass producibility in synthesizing such nanoarchitected materials in the form of an inch-scale film. Herein, we focus on the feasibility of using PnP as a scalable fabrication technique for three-dimensional nanostructures and the superiority of the resultant thin-shell oxide nanoarchitected materials for specific applications, such as lightweight structural materials, mechanically robust nanocomposites, and high-performance piezoelectric materials. This review will discuss and summarize the relevant results obtained for nanoarchitected materials synthesized by PnP and provide suggestions for future research directions for scalable manufacturing and application.
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Affiliation(s)
- Gwangmin Bae
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Dongchan Jang
- Department of Nuclear and Quantum Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Seokwoo Jeon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
- KAIST Institute for Nanocentury (KINC), Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
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16
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Te-Embedded Nanocrystalline PbTe Thick Films: Structure and Thermoelectric Properties Relationship. COATINGS 2021. [DOI: 10.3390/coatings11030356] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
The Te-embedded PbTe nanocrystallline thick films (i.e., 50 µm) were electrodeposited, where the fraction and average grain size of PbTe and Te phases were tuned by adjusting the applied potential followed by post thermal treatment. The crystal grain boundary and Te nano-inclusion in the films played critical roles in their thermoelectric properties. The Te-embedded PbTe thick film with the average grain size of around 100 nm showed lower energy barrier height (EB = 0.023 eV) than thick films with the average grain size of a few tens of nm (EB = 0.11). Although decrease in the energy barrier reduced the Seebeck coefficient, however, it enhanced the electrical conductivity, which resulted in an increase in power factor (PF). The highest power factor was 183 μw K−2 cm−1, achieved at the energy barrier of 0.023 eV.
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17
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Electroplated Functional Materials with 3D Nanostructures Defined by Advanced Optical Lithography and Their Emerging Applications. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10248780] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
Abstract
Electroplating has been favored to date as a surface treatment technology in various industries in the development of semiconductors, automobiles, ships, and steel due to its advantages of being a simple, solution-based process, with low cost and high throughput. Recently, classical electroplating has been reborn as an advanced manufacturing process for functional materials by combining it with unconventional optical three-dimensional (3D) nanofabrication techniques capable of generating polymer templates with high-resolution 3D periodic nanostructures. The bottom-up filling behavior of electroplating rising from a seed layer makes it possible to densely fill the nanoporous network of the template with heterogeneous inorganic materials. At this time, understanding and optimizing the process parameters (e.g., additive, current density, type of current waveform, etc.) of electroplating is critical for defect control. In addition, since electroplating is generally performed near room temperature, unlike other thin film deposition techniques, structural damage to the polymer template by heat during electroplating is almost negligible. Based on the excellent compatibility of electroplating and optical 3D nanofabrication, innovative functional materials with 3D periodic nanostructures targeting electrochemical or energy-related applications have been created. In this mini review, a strategy for producing functional materials with 3D periodic nanostructures through a templating process will be covered, and the recent cases of successful applications to electrodes for energy storage devices, electrocatalysts, and thermoelectric materials will be summarized. We will also discuss technical issues that need to be considered in the process to improve the quality of the resulting functional materials with 3D nanoarchitectures.
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18
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Okram GS, De BK, Dam S, Hussain S, Sathe V, Deshpande U, Lakhani A, Kuo YK. Enhanced Thermoelectric Performance of Novel Reaction Condition-Induced Bi 2S 3-Bi Nanocomposites. ACS APPLIED MATERIALS & INTERFACES 2020; 12:37248-37257. [PMID: 32709194 DOI: 10.1021/acsami.0c10774] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This is the first report on the enhanced thermoelectric (TE) properties of novel reaction-temperature (TRe) and duration-induced Bi2S3-Bi nanocomposites synthesized using a facile one-step polyol method. They are well characterized as nanorod composites of orthorhombic Bi2S3 and rhombohedral Bi phases in which the latter coats the former forming Bi2S3-Bi core-shell-like structures along with independent Bi nanoparticles. A very significant observation is the systematic reduction in electrical resistivity ρ with a whopping 7 orders of magnitude (∼107) with just reaction temperature and duration increase, revealing a promising approach for the reduction of ρ of this highly resistive chalcogenide and hence resolving the earlier obstacles for its thermoelectric application potentials in the past few decades. Most astonishingly, a TE power factor at 300 K of the highest Bi content nanocomposite pellet, made at 27 °C using ∼900 MPa pressure, is 3 orders of magnitude greater than that of hot-pressed Bi2S3. Its highest ZT at 325 K of 0.006 is over twice of that of similarly prepared CuS or Ag2S-based nanocomposites. A significantly improved TE performance potential near 300 K is demonstrated for these toxic-free and rare-earth element-free TE nanocomposites, making the present synthesis method as a pioneering approach for developing enhanced thermoelectric properties of Bi2S3-based materials without extra sintering steps.
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Affiliation(s)
- Gunadhor Singh Okram
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - Binoy Krishna De
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - Siddhartha Dam
- UGC-DAE Consortium for Scientific Research, Kalpakkam Node, Kokilamedu 603104, India
| | - Shamima Hussain
- UGC-DAE Consortium for Scientific Research, Kalpakkam Node, Kokilamedu 603104, India
| | - Vasant Sathe
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - Uday Deshpande
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - Archana Lakhani
- UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
| | - Yung-Kang Kuo
- Department of Physics, National Dong-Hwa University, Hualien 974, Taiwan
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19
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Large-Area Laying of Soft Textile Power Generators for the Realization of Body Heat Harvesting Clothing. COATINGS 2019. [DOI: 10.3390/coatings9120831] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
This paper presents the realization of a flexible thermoelectric (TE) generator as a textile fabric that converts human body heat into electrical energy for portable, low-power microelectronic products. In this study, an organic non-toxic conductive coating was used to dip rayon wipes into conductive TE fabrics so that the textile took advantage of the TE currents which were parallel to the temperature gradient. To this end, a dyed conductive cloth was first sewn into a TE unit. The TE unit was then sewn into an array to create a temperature difference between the human body and the environment for TE power harvesting. The prototype of the TE fabric consisted of 48 TE units connected by conductive wire over an area of 275 × 205 mm2, and the TE units were sewn on a T-shirt at the chest area. After fabrication and property tests, a Seebeck coefficient of approximately 20 μV/K was measured from the TE unit, and 0.979 mV voltage was obtained from the T-shirt with TE textile fabric. Since the voltage was generated at a low temperature gradient environment, the proposed energy solution in actual fabric applications is suitable for future portable microelectronic power devices.
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