Evolution of high-frequency Raman modes and their doping dependence in twisted bilayer MoS2

Twist Angle-Dependent Phonon Hybridization in WSe2/WSe2 Homobilayer

The emerging moiré superstructure of twisted transition metal dichalcogenides (TMDs) leads to various correlated electronic and optical properties compared to those of twisted bilayer graphene. In such a versatile architecture, phonons can also be renormalized and evolve due to atomic reconstruction, which, in turn, depends on the twist angle. However, observing this reconstruction and its relationship to phonon behavior with conventional, cost-effective imaging methods remains challenging. Here, we used noninvasive Raman spectroscopy on twisted WSe2/WSe2 (t-WSe2) homobilayers to examine the evolution of phonon modes due to interlayer coupling and atomic reconstruction. Unlike in the natural bilayer (NB), ∼0° as well as ∼60° t-WSe2 samples, the nearly degenerate A1g/E2g mode in the twisted samples (1-7°) split into a doublet in addition to the nondegenerate B2g mode, and the maximum splitting is observed around 2-3°. Our detailed theoretical calculations qualitatively capture the splitting and its dependence as a function of the twist angle and highlight the role of the moiré potential in phonon hybridization. Additionally, we found that around the 2° twist angle, the anharmonic phonon-phonon interaction is higher than the natural bilayer and decreases for larger twist angles. Interestingly, we observed anomalous Raman frequency softening and line-width increase with the decreasing temperature below 50 K, pointing to the combined effect of enhanced electron-phonon coupling and cubic anharmonic interactions in moiré superlattice.

Low-frequency Raman active modes of twisted bilayer MoS2

We study the low-frequency Raman active modes of twisted bilayer MoS2for several twist angles using a force-field approach and a parametrized bond polarizability model. We show that twist angles near high-symmetry stacking configurations exhibit stacking frustration that leads to significant buckling of the moiré superlattice. We find that atomic relaxation due to the twist is of prime importance. The periodic displacement of the Mo atoms shows the realization of a soliton network, and in turn, leads to the emergence of a number of frequency modes not seen in the high-symmetry stacking systems. Some of the modes are only seen in theXZRaman polarization setup while others are seen in theXYsetup. The symmetry of the normal modes, and how this affects the Raman tensors is examined in detail.

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS2 thin films with domains much smaller than the laser spot size

Raman spectroscopy is a widely used technique to characterize nanomaterials because of its convenience, non-destructiveness, and sensitivity to materials change. The primary purpose of this work is to determine via Raman spectroscopy the average thickness of MoS2 thin films synthesized by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD). Such samples are constituted of nanoflakes (with a lateral size of typically 50 nm, i.e., well below the laser spot size), with possibly a distribution of thicknesses and twist angles between stacked layers. As an essential preliminary, we first reassess the applicability of different Raman criteria to determine the thicknesses (or layer number, N) of MoS2 flakes from measurements performed on reference samples, namely well-characterized mechanically exfoliated or standard chemical vapor deposition MoS2 large flakes deposited on 90 ± 6 nm SiO2 on Si substrates. Then, we discuss the applicability of the same criteria for significantly different DLI-PP-CVD MoS2 samples with average thicknesses ranging from sub-monolayer up to three layers. Finally, an original procedure based on the measurement of the intensity of the layer breathing modes is proposed to evaluate the surface coverage for each N (i.e., the ratio between the surface covered by exactly N layers and the total surface) in DLI-PP-CVD MoS2 samples.

Surface plasmon enhancement in silver nanowires and bilayer two-dimensional materials

In order to improve the low light absorption of two-dimensional (2D) transition metal dichalcogenides (TMDCs), surface plasmon (SP) nanostructures have been widely studied. However, the impact of interlayer twist on such nanostructures has rarely been studied. Here, we construct two different composite structures of silver nanowires (Ag NWs) and pristine bilayer MoS2 (pBLM) or twisted bilayer MoS2 (tBLM). The interlayer twist can further promote the light utilization of MoS2, resulting in an ∼4-fold higher spectral enhancement in Ag/tBLM than that in Ag/pBLM. In addition, the photocurrent and detectivity of the phototransistor based on the Ag/tBLM composite structure were improved by 7-fold and ∼100-fold, respectively, compared to those of the Ag/pBLM phototransistor. Theoretical simulations show that the enhancement of photocurrent can be attributed to the enhancement of the local electric field at the interface between Ag NWs and the tBLM film, which is called the 'hot spot'. These results provide a reference for understanding the modulation mechanism of SPs and interlayer twist on the optoelectronic properties of 2D materials.

High temperature anomalous Raman and photoluminescence response of molybdenum disulfide with sulfur vacancies

We report an intriguing anomalous behavior observed in the temperature-dependent Raman spectra of mono-, bi-, and trilayer molybdenum disulfide samples with sulfur vacancies, measured at high temperatures ranging from room temperature to 463 K. In contrast to existing reports, we observed a decrease in the FWHM of the A[Formula: see text] phonon mode, along with an increase in the relative intensity of the A[Formula: see text] mode to the E[Formula: see text] mode, as the temperature increased. This trend becomes less prominent as the layer number increases from monolayer, disappearing entirely in few-layer samples. Additionally, we observed an intensity enhancement in the photoluminescence spectra of MoS2 samples at high temperatures (up to 550 K), which depends on the layer number. These observations are explained by considering the presence of sulfur vacancies, their interaction with the environment, electron density reduction, and a phonon-mediated intervalley charge transfer at elevated temperatures. Our results unambiguously establish that the effect of defects (sulfur vacancies) is more prominently reflected in the temperature dependence of FWHM and the relative intensity of the Raman modes rather than in the Raman peak positions.

Extraordinary Phonon Displacement and Giant Resonance Raman Enhancement in WSe2/WS2 Moiré Heterostructures

Twisted van der Waals heterostructures are known to induce surprisingly diverse and intriguing phenomena, such as correlated electronic phase and unconventional optical properties. This can be realized by controlled rotation of adjacent atomic planes, which provides an uncommon way to manipulate inelastic light-matter interactions. Here, we discover an extraordinary blue shift of 5-6 wavenumbers for high-frequency phonon modes in WS₂/WSe₂ twisted heterobilayers, captured meticulously using Raman spectroscopy. Phonon spectra displace rapidly over a subtle change in interlayer twist angle owing to heterostrain and atomic reconstruction from the Moiré pattern. First-order linear coefficients of the phonon modes in twisted heterostructures are further found to increase largely compared to their monolayer counterpart and vary immensely with the twist angle. Exceptional and extravagant enhancement of up to 50-fold is observed in the Raman vibrational intensity at a specific twist angle; this is largely influenced by the resonance process derived from a simple critical twist angle model. In addition, we depict how the resonance can be modulated by changing the thermal conditions and also the stacking angle. Therefore, our work further highlights the twist-driven phonon dynamics in pristine two-dimensional heterostructures, adding vital insight into Moiré physics and promoting comprehensive understanding of structural and optical properties in Moiré superlattices.

Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2

The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS[Formula: see text] encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1st and 2nd order phonon modes is unambiguously observed in a broad range of temperatures from 5 to 320 K. The spectrum includes the Raman-active modes, i.e. E[Formula: see text]([Formula: see text]) and A[Formula: see text]([Formula: see text]) along with their Davydov-split counterparts, i.e. E[Formula: see text]([Formula: see text]) and B[Formula: see text]([Formula: see text]). The temperature evolution of the Raman scattering spectrum brings forward key observations, as the integrated intensity profiles of different phonon modes show diverse trends. The Raman-active A[Formula: see text]([Formula: see text]) mode, which dominates the Raman scattering spectrum at T = 5 K quenches with increasing temperature. Surprisingly, at room temperature the B[Formula: see text]([Formula: see text]) mode, which is infrared-active in the bilayer, is substantially stronger than its nominally Raman-active A[Formula: see text]([Formula: see text]) counterpart.

Anomalous optical excitations from arrays of whirlpooled lattice distortions in moiré superlattices

Moiré superlattices formed by stacking two-dimensional crystals have reinvigorated the pursuit for emergent functionalities of engineered superlattices. Unique optical characteristics can be realized from the interplay between the electronic excitations and the atomic rearrangements owing to their intrinsic softness. Although large-scale reconstructions have been identified at small twist angles, they have been treated as being rigid at large twist angles. Here, we report that moiré superlattices made from single layers of MoS₂ and WSe₂ exhibit a pair of torsional strains with opposite chirality irrespective of the twist angle. The whirlpool-shaped periodic lattice distortions introduce fuzziness in the Raman spectra and universal redshifts to the intralayer excitons for all twist angles. We show that both of these modulations become weaker as the twist angle increases but do not disappear, whereas they are turned off when the constituent layers are not tightly coupled, thus establishing an essential structure-property relationship for moiré superlattices.

A GO/CoMo3S13 chalcogel heterostructure with rich catalytic Mo-S-Co bridge sites for the hydrogen evolution reaction

Molybdenum disulfide (MoS₂)-based materials are extensively studied as promising hydrogen evolution reaction (HER) catalysts. In order to bring out the full potential of chalcogenide chemistry, precise control over the active sulfur sites and enhancement of electronic conductivity need to be achieved. This study develops a highly active HER catalyst with an optimized active site-controlled cobalt molybdenum sulfide (CoMo₃S₁₃) chalcogel/graphene oxide aerogel heterostructure. The highly active CoMo₃S₁₃ chalcogel catalyst was achieved by the synergetic catalytic sites of [Mo₃S₁₃]^2- and the Mo-S-Co bridge. The optimized GO/CoMo₃S₁₃ chalcogel heterostructure catalyst exhibited high catalytic HER performance with an overvoltage of 130 mV, a current density of 10 mA cm^-2, a small Tafel slope of 40.1 mV dec^-1, and remarkable stability after 12 h of testing. This study presents a successful example of a synergistic heterostructure exploiting both the appealing electrical functionality of GO and catalytically active [Mo₃S₁₃]^2- sites.

A simple fabrication strategy for orientationally accurate twisted heterostructures

Van der Waals (vdW) heterostructure is a type of metamaterial where multiple layers of 2D materials are vertically aligned at controlled misorientation. The relative rotation in between the adjacent layers, or the twist angle between them plays a crucial role in changing the electronic band structure of the superlattice. The assembly of multi-layers of precisely twisted two dimensional layered materials requires knowledge of the atomic structure at the edge of the flake. It may be artificially created by the 'tear and stack' process. Otherwise, the crystallographic orientation needs to be determined through invasive processes such as transmission electron microscopy or scanning tunneling microscopy, and via second-harmonic generation (SHG). Here, we demonstrate a simple and elegant transfer protocol using only an optical microscope as a edge identifier tool through which, controlled transfer of twisted homobilayer and heterobilayer transition metal dichalcogenides is performed with close to 100% yield. The fabricated twisted vdW heterostructures have been characterized by SHG, Raman spectroscopy and photoluminiscence spectroscopy, confirming the desired twist angle within ∼0.5° accuracy. The presented method is reliable, quick and prevents the use of invasive tools which is desirable for reproducible device functionalities.

Giant Photoluminescence Enhancement and Carrier Dynamics in MoS2 Bilayers with Anomalous Interlayer Coupling

Fundamental researches and explorations based on transition metal dichalcogenides (TMDCs) mainly focus on their monolayer counterparts, where optical densities are limited owing to the atomic monolayer thickness. Photoluminescence (PL) yield in bilayer TMDCs is much suppressed owing to indirect-bandgap properties. Here, optical properties are explored in artificially twisted bilayers of molybdenum disulfide (MoS₂). Anomalous interlayer coupling and resultant giant PL enhancement are firstly observed in MoS₂ bilayers, related to the suspension of the top layer material and independent of twisted angle. Moreover, carrier dynamics in MoS₂ bilayers with anomalous interlayer coupling are revealed with pump-probe measurements, and the secondary rising behavior in pump-probe signal of B-exciton resonance, originating from valley depolarization of A-exciton, is firstly reported and discussed in this work. These results lay the groundwork for future advancement and applications beyond TMDCs monolayers.

Phonon renormalization in reconstructed MoS2 moiré superlattices

In moiré crystals formed by stacking van der Waals materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS₂ twisted bilayers, adding an insight to moiré physics. Over a range of small twist angles, the phonon spectra evolve rapidly owing to ultra-strong coupling between different phonon modes and atomic reconstructions of the moiré pattern. We develop a low-energy continuum model for phonons that overcomes the outstanding challenge of calculating the properties of large moiré supercells and successfully captures the essential experimental observations. Remarkably, simple optical spectroscopy experiments can provide information on strain and lattice distortions in moiré crystals with nanometre-size supercells. The model promotes a comprehensive and unified understanding of the structural, optical and electronic properties of moiré superlattices.

Highly Strain-Tunable Interlayer Excitons in MoS2/WSe2 Heterobilayers

Interlayer excitons in heterobilayers of transition-metal dichalcogenides (TMDCs) have generated enormous interest due to their permanent vertical dipole moments and long lifetimes. However, the effects of mechanical strain on the optoelectronic properties of interlayer excitons in heterobilayers remain relatively uncharacterized. Here, we experimentally demonstrate strain tuning of Γ-K interlayer excitons in molybdenum disulfide and tungsten diselenide (MoS₂/WSe₂) wrinkled heterobilayers and obtain a deformation potential constant of ∼107 meV/% uniaxial strain, which is approximately twice that of the intralayer excitons in the constituent monolayers. We further observe a nonmonotonic dependence of the interlayer exciton photoluminescence intensity with strain, which we interpret as being due to the sensitivity of the Γ point to band hybridization arising from the competition between in-plane strain and out-of-plane interlayer coupling. Strain engineering with interlayer excitons in TMDC heterobilayers offers higher strain tunability and new degrees of freedom compared to their monolayer counterparts.

Toward automated classification of monolayer versus few-layer nanomaterials using texture analysis and neural networks

The need for a fast and robust method to characterize nanostructure thickness is growing due to the tremendous number of experiments and their associated applications. By automatically analyzing the microscopic image texture of MoS2 and WS2, it was possible to distinguish monolayer from few-layer nanostructures with high accuracy for both materials. Three methods of texture analysis (TA) were used: grey level histogram (GLH), grey levels co-occurrence matrix (GLCOM), and run-length matrix (RLM), which correspond to first, second, and higher-order statistical methods, respectively. The best discriminating features were automatically selected using the Fisher coefficient, for each method, and used as a base for classification. Two classifiers were used: artificial neural networks (ANN), and linear discriminant analysis (LDA). RLM with ANN was found to give high classification accuracy, which was 89% and 95% for MoS2 and WS2, respectively. The result of this work suggests that RLM, as a higher-order TA method, associated with an ANN classifier has a better ability to quantify and characterize the microscopic structure of nanolayers, and, therefore, categorize thickness to the proper class.