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Abdelmoneim A, Elfayoumi MAK, Abdel-Wahab MS, Al-Enizi AM, Lee JK, Tawfik WZ. Enhanced solar-driven photoelectrochemical water splitting using nanoflower Au/CuO/GaN hybrid photoanodes. RSC Adv 2024; 14:16846-16858. [PMID: 38784418 PMCID: PMC11114097 DOI: 10.1039/d4ra01931h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Accepted: 05/08/2024] [Indexed: 05/25/2024] Open
Abstract
Harnessing solar energy for large-scale hydrogen fuel (H2) production shows promise in addressing the energy crisis and ecological degradation. This study focuses on the development of GaN-based photoelectrodes for efficient photoelectrochemical (PEC) water splitting, enabling environmentally friendly H2 production. Herein, a novel nanoflower Au/CuO/GaN hybrid structure was successfully synthesized using a combination of methods including successive ionic layer adsorption and reaction (SILAR), RF/DC sputtering, and metal-organic chemical vapour deposition (MOCVD) techniques. Structural, morphological, and optical characteristics and elemental composition of the prepared samples were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis spectroscopy, and energy-dispersive X-ray (EDX) spectroscopy, respectively. PEC and electrochemical impedance measurements were performed for all samples. The nanoflower Au/CuO/GaN hybrid structure exhibited the highest photocurrent density of ∼4 mA cm-2 at 1.5 V vs. RHE in a Na2SO4 electrolyte with recorded moles of H2 of about 3246 μmol h-1 cm-2. By combining these three materials in a unique structure, we achieved improved performance in the conversion of solar energy into chemical energy. The nanoflower structure provides a large surface area and promotes light absorption while the Au, CuO, and GaN components contribute to efficient charge separation and transfer. This study presents a promising strategy for advancing sustainable H2 production via efficient solar-driven water splitting.
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Affiliation(s)
- Alhoda Abdelmoneim
- Department of Physics, Faculty of Science, Beni-Suef University Beni-Suef 62511 Egypt
| | - M A K Elfayoumi
- Department of Physics, Faculty of Science, Beni-Suef University Beni-Suef 62511 Egypt
| | - Mohamed Sh Abdel-Wahab
- Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences, Beni-Suef University Beni-Suef 62511 Egypt
| | - Abdullah M Al-Enizi
- Department of Chemistry, College of Science, King Saud University P. O. Box 2455 Riyadh 11451 Saudi Arabia
| | - June Key Lee
- Department of Materials Science and Engineering, Chonnam National University Gwangju 61186 Republic of Korea
| | - Wael Z Tawfik
- Department of Physics, Faculty of Science, Beni-Suef University Beni-Suef 62511 Egypt
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Jiang N, Ghosh S, Frentrup M, Fairclough SM, Loeto K, Kusch G, Oliver RA, Joyce HJ. Complications in silane-assisted GaN nanowire growth. NANOSCALE ADVANCES 2023; 5:2610-2620. [PMID: 37143793 PMCID: PMC10153487 DOI: 10.1039/d2na00939k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Accepted: 04/08/2023] [Indexed: 05/06/2023]
Abstract
Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high temperature annealing, nitridation and nucleation steps, and the growth of GaN nanowires. The nucleation step - which transforms the AlN layer formed during the nitridation step to AlGaN - is critical for subsequent silane-assisted GaN nanowire growth. Both Ga-polar and N-polar GaN nanowires were grown with N-polar nanowires growing much faster than the Ga-polar nanowires. On the top surface of the N-polar GaN nanowires protuberance structures were found, which relates to the presence of Ga-polar domains within the nanowires. Detailed morphology studies revealed ring-like features concentric with the protuberance structures, indicating energetically favourable nucleation sites at inversion domain boundaries. Cathodoluminescence studies showed quenching of emission intensity at the protuberance structures, but the impact is limited to the protuberance structure area only and does not extend to the surrounding areas. Hence it should minimally affect the performance of devices whose functions are based on radial heterostructures, suggesting that radial heterostructures remain a promising device structure.
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Affiliation(s)
- Nian Jiang
- Department of Engineering, University of Cambridge 9 JJ Thomson Ave Cambridge CB3 0FA UK
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Saptarsi Ghosh
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Martin Frentrup
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Simon M Fairclough
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Kagiso Loeto
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Gunnar Kusch
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Rachel A Oliver
- Department of Materials Science and Metallurgy, University of Cambridge 27 Charles Babbage Rd Cambridge CB3 0FS UK
| | - Hannah J Joyce
- Department of Engineering, University of Cambridge 9 JJ Thomson Ave Cambridge CB3 0FA UK
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Soopy AKK, Li Z, Tang T, Sun J, Xu B, Zhao C, Najar A. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:E126. [PMID: 33430484 PMCID: PMC7827665 DOI: 10.3390/nano11010126] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Revised: 12/28/2020] [Accepted: 12/31/2020] [Indexed: 02/01/2023]
Abstract
This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
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Affiliation(s)
- Abdul Kareem K. Soopy
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE;
| | - Zhaonan Li
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
| | - Tianyi Tang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Jiaqian Sun
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Bo Xu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Chao Zhao
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Adel Najar
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE;
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Maraj M, Nabi G, Usman K, Wang E, Wei W, Wang Y, Sun W. High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response. MATERIALS (BASEL, SWITZERLAND) 2020; 13:E3537. [PMID: 32796564 PMCID: PMC7475854 DOI: 10.3390/ma13163537] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Revised: 08/04/2020] [Accepted: 08/05/2020] [Indexed: 11/16/2022]
Abstract
Group III-V semiconductors with direct band gaps have become crucial for optoelectronic and microelectronic applications. Exploring these materials for spintronic applications is an important direction for many research groups. In this study, pure and cobalt doped GaN nanowires were grown on the Si substrate by the chemical vapor deposition (CVD) method. Sophisticated characterization techniques such as X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), High-Resolution Transmission Electron Microscopy (HRTEM) and photoluminescence (PL) were used to characterize the structure, morphology, composition and optical properties of the nanowires. The doped nanowires have diameters ranging from 60-200 nm and lengths were found to be in microns. By optimizing the synthesis process, pure, smooth, single crystalline and highly dense nanowires have been grown on the Si substrate which possess better magnetic and optical properties. No any secondary phases were observed even with 8% cobalt doping. The magnetic properties of cobalt doped GaN showed a ferromagnetic response at room temperature. The value of saturation magnetization is found to be increased with increasing doping concentration and magnetic saturation was found to be 792.4 µemu for 8% cobalt doping. It was also depicted that the Co atoms are substituted at Ga sites in the GaN lattice. Furthermore N vacancies are also observed in the Co-doped GaN nanowires which was confirmed by the PL graph exhibiting nitrogen vacancy defects and strain related peaks at 455 nm (blue emission). PL and magnetic properties show their potential applications in spintronics.
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Affiliation(s)
- Mudassar Maraj
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
- Department of Physics, University of Gujrat, Gujrat 50700, Pakistan
| | - Ghulam Nabi
- Department of Physics, University of Gujrat, Gujrat 50700, Pakistan
| | - Khurram Usman
- International Academy of Optoelectronics, South China Normal University, Zhaoqing 526000, China;
| | - Engui Wang
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
| | - Wenwang Wei
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
| | - Yukun Wang
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
| | - Wenhong Sun
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
- Guangxi Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guangxi University, Nanning 530004, China
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