High Conductivity and Diffusion Mechanism of Oxide Ions in Triple Fluorite-Like Layers of Oxyhalides

Oxide ion conductors are attractive materials because of their wide range of applications, such as solid oxide fuel cells. Oxide ion conduction in oxyhalides (compounds containing both oxide ions and halide ions) is rare. In the present work, we found that Sillén oxychlorides, Bi2-xTexLuO4+x/2Cl (x = 0, 0.1, and 0.2), show high oxide ion conductivity. The bulk conductivity of Bi1.9Te0.1LuO4.05Cl reaches 10-2 S cm-1 at 431 °C, which is much lower than 644 °C of yttria-stabilized zirconia (YSZ) and 534 °C of La0.8Sr0.2Ga0.83Mg0.17O2.815 (LSGM). Thanks to the low activation energy, Bi1.9Te0.1LuO4.05Cl exhibits a high bulk conductivity of 1.5 × 10-3 S cm-1 even at a low temperature of 310 °C, which is 204 times higher than that of YSZ. The low activation energy is attributed to the interstitialcy oxide ion diffusion in the triple fluorite-like layer, as evidenced by neutron diffraction experiments (Rietveld and neutron scattering length density analyses), bond valence-based energy calculations, static DFT calculations, and ab initio molecular dynamics simulations. The electrical conductivity of Bi1.9Te0.1LuO4.05Cl is almost independent of the oxygen partial pressure from 10-18 to 10-4 atm at 431 °C, indicating the electrolyte domain. Bi1.9Te0.1LuO4.05Cl also exhibits high chemical stability under a CO2 flow and ambient air at 400 °C. The oxide ion conduction due to the two-dimensional interstitialcy diffusion is considered to be common in Sillén oxyhalides with triple fluorite-like layers, such as Bi1.9Te0.1RO4.05Cl (R = La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu) and Bi6-2xTe2xO8+xBr2 (x = 0.1, 0.5). The present study opens a new field of materials chemistry: oxide ion-conducting Sillén oxyhalides with triple fluorite-like layers.

Enriching 2D transition metal borides via MB XMenes (M = Fe, Co, Ir): Strong correlation and magnetism

Recently, two-dimensional (2D) FeSe-like anti-MXenes (or XMenes), composed of late d-block transition metal M and p-block nonmetal X elements, have been both experimentally and theoretically investigated. Here, we select three 2D borides FeB, CoB and IrB for a deeper investigation by including strong correlation effects, as a fertile ground for understanding and applications. Using a combination of Hubbard corrected first-principles calculations and Monte Carlo simulations, FeB and CoB are found to be ferro- and anti-ferro magnetic, contrasting with the non-magnetic nature of IrB. The metallic FeB XMene monolayer, superior to most of the MXenes or MBenes, exhibits robust ferromagnetism, driven by intertwined direct-exchange and super-exchange interactions between adjacent Fe atoms. The predicted Curie temperature (TC) of the FeB monolayer via the Heisenberg model reaches an impressive 425 K, with the easy-axis oriented out-of-plane and high magnetic anisotropic energy (MAE). The asymmetry in the spin-resolved transmission spectrum induces a thermal spin current, providing an opportunity for spin filtration. This novel 2D FeB material is expected to hold great promise as an information storage medium and find applications in emerging spintronic devices.

Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers

The lack of macroscopic magnetic moments makes antiferromagnetic materials promising candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides (VXYSe4; X, Y = Al, Ga) monolayers are investigated based on the density-functional theory and Monte Carlo simulations. The results reveal that the Néel temperature of the VGa2Se4 monolayer is 18 K with zigzag2-antiferromagnetic (AFM) spin ordering. Also, the magnetic ordering of V ions in VAl2Se4 and VAlGaSe4 monolayers prefer zigzag1-AFM coupling with Néel temperature of 47 K and 33 K, respectively. The magnetic anisotropy calculations demonstrate that the easy magnetization axis of the VXYSe4 monolayers is parallel to the y axis. In addition, the VXYSe4 monolayers can be adjusted from the AFM state to the ferromagnetic (FM) state under biaxial stretching, which can be attributed to the competition between d-p-d superexchange and d-d direct exchange caused by the variation of bond length. The transition temperature of VXYSe4 monolayers can be elevated above room temperature with the help of compression strain. In particular, the in-plane magnetic anisotropy is a robust characteristic regardless of the magnitude of the applied biaxial strain. These explorations not only enrich the family of AFM monolayers with excellent stability but also provide distinctive ideas for the performance control of AFM materials and their applications in nanodevices.

An antiferromagnetic semiconducting FeCN2 monolayer with a large magnetic anisotropy and strong magnetic coupling

Two-dimensional antiferromagnetic (AFM) materials with an intrinsic semiconductivity, a high critical temperature, and a sizable magnetic anisotropy energy (MAE) have attracted extensive attention because they show promise for high-performance spintronic nanodevices. Here, we have identified a new FeCN2 monolayer with a unique zigzag Fe chain through first-principles swarm structural search calculations. It is an AFM semiconductor with a direct band gap of 2.04 eV, a Néel temperature (TN) of 176 K, and a large in-plane MAE of 0.50 meV per Fe atom. More interestingly, the intrinsic antiferromagnetism, contributed by the strong magnetic coupling of neighbouring Fe ions, can be maintained under the external biaxial strains. A large cohesive energy and high dynamical stability favor synthesis and application. Therefore, these fascinating properties of the FeCN2 monolayer make it a promising nanoscale spintronic material.

2D FeOCl: A Highly In-Plane Anisotropic Antiferromagnetic Semiconductor Synthesized via Temperature-Oscillation Chemical Vapor Transport

2D van der Waals (vdW) transition-metal oxyhalides with low symmetry, novel magnetism, and good stability provide a versatile platform for conducting fundamental research and developing spintronics. Antiferromagnetic FeOCl has attracted significant interest owing to its unique semiconductor properties and relatively high Néel temperature. Herein, good-quality centimeter-scale FeOCl single crystals are controllably synthesized using the universal temperature-oscillation chemical vapor transport (TO-CVT) method. The crystal structure, bandgap, and anisotropic behavior of the 2D FeOCl are explored in detail. The absorption spectrum and electrical measurements reveal that 2D FeOCl is a semiconductor with an optical bandgap of ≈2.1 eV and a resistivity of ≈10^-1  Ω m at 295 K, and the bandgap increases with decreasing thickness. Strong in-plane optical and electrical anisotropies are observed in 2D FeOCl flakes, and the maximum resistance anisotropic ratio reaches 2.66 at 295 K. Additionally, the lattice vibration modes are studied through temperature-dependent Raman spectra and first-principles density functional calculations. A significant decrease in the Raman frequencies below the Néel temperature is observed, which results from the strong spin-phonon coupling effect in 2D FeOCl. This study provides a high-quality low-symmetry vdW magnetic candidate for miniaturized spintronics.

Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation

Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.

Discovery of intrinsic two-dimensional antiferromagnets from transition-metal borides

Intrinsic two-dimensional (2D) magnets are promising materials for developing advanced spintronic devices. A few have already been synthesized from the exfoliation of van der Waals magnetic materials. In this work, by using ab initio calculations and Monte Carlo simulation, a series of 2D MBs (M = Cr, Mn or Fe; B = boron) are predicted possessing robust magnetism, sizeable magnetic anisotropy energy, and excellent structural stability. These 2D MBs can be respectively synthesized from non-van der Waals compounds with low separation energies such as Cr2AlB2, Mn2AlB2, and Fe2AlB2. 2D CrB is a ferromagnetic (FM) metal with a weak in-plane magnetic anisotropy energy of 23.6 μeV per atom. Metallic 2D MnB and FeB are Ising antiferromagnets with an out-of-plane magnetic easy axis and robust magnetic anisotropy energies up to 222.7 and 482.2 μeV per atom, respectively. By using Monte Carlo simulation, the critical temperatures of 2D CrB, MnB, and FeB were calculated to be 440 K, 300 K, and 320 K, respectively. Our study found that the super-exchange interaction plays the dominant role in determining the long-range magnetic ordering of 2D MBs. Moreover, most functionalized 2D MBTs (T = O, OH or F) are predicted to have AFM ground states. Alternating transition metals or functional groups can significantly modulate the magnetic ground state and critical temperature of 2D MBTs. This study suggests that the 2D MBs and MBTs are promising metallic 2D magnets for spintronic applications.

First-principles prediction of a room-temperature ferromagnetic and ferroelastic 2D multiferroic MnNX (X = F, Cl, Br, and I)

Two-dimensional (2D) multiferroic materials have great potential applications in multifunctional nanoelectronics devices. Here, we construct a series of stable and isolated monolayers as 2D manganese nitrohalides MnNX (X = F, Cl, Br, and I) and systematically investigate the structural, electronic and magnetic properties using first-principles and Monte Carlo simulations. We find that ground states simultaneously show in-plane ferroelasticity and room-temperature ferromagnetic properties. We also reveal that the in-plane magnetic anisotropy can be tunable by the uniaxial ferroelastic strain. Our results will provide significant implications for future experiments and the design of new functional materials at the nanoscale.