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Karoui L, Smari M, Mnasri T. The effect of the gelation temperature on the structural, magnetic and magnetocaloric properties of perovskite nanoparticles manufactured using the sol-gel method. RSC Adv 2024; 14:11456-11469. [PMID: 38595720 PMCID: PMC11003238 DOI: 10.1039/d4ra01086h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Accepted: 04/03/2024] [Indexed: 04/11/2024] Open
Abstract
This study presents a comprehensive investigation of the structural and magnetic properties of La0.8Sr0.2Mn0.8Co0.2O3 (LS1, LS2 and LS3) compounds synthesized via the sol-gel method at different gelation temperatures through X-ray diffraction and different magnetic measurement techniques. The Rietveld refinement demonstrated that all samples exhibit a rhombohedral perovskite structure with the R3̄C space group. Their magnetic behavior, characterized through magnetization measurements, hysteresis loops, and Arrot plots, demonstrates a ferromagnetic-paramagnetic transition with notable soft ferromagnetic characteristics. The samples also demonstrate second-order magnetic transitions, short-range magnetic order and the presence of both ferromagnetic and antiferromagnetic contributions. AC magnetic susceptibility measurements, allowing the investigation of the magnetic dynamics of the samples, shows that the Vogel-Fulcher and the Conventional Critical Slowing Down models are the most appropriate for describing the dynamic behavior, confirming the spin-glass nature of the compounds and the presence of medium to strong interaction between magnetic nanoparticles. The influence of gelation temperature in the magnetocaloric effect of the compounds was proven and LS1, synthesized at the lowest gelation temperature (70 °C), exhibits the higher magnetic entropy change (|ΔSmax| = 3.25 J kg-1 K-1 and RCP = 209.83 J kg-1 at 5 T). For a better evaluation of the magnetocaloric efficiency, the temperature average entropy change (TEC) parameter was calculated for all three samples and LS1 showed the highest value (TEC (LS1) ∼3.2 J kg-1 K-1 for ΔTH-C = 10 K and ΔH = 5 T).
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Affiliation(s)
- Line Karoui
- Laboratory of Technology, Energy and Innovative Materials, TEMI, Department of Physics, Faculty of Sciences of Gafsa, University of Gafsa 2112 Tunisia
| | - Mourad Smari
- Applied Physics Laboratory, Faculty of Sciences of Sfax, University of Sfax B.P. 1171 3000 Sfax Tunisia
| | - Taoufik Mnasri
- Laboratory of Technology, Energy and Innovative Materials, TEMI, Department of Physics, Faculty of Sciences of Gafsa, University of Gafsa 2112 Tunisia
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Chen Y, Yuan X, Shan S, Zhang C, Liu R, Zhang X, Zhuang W, Chen Y, Xu Y, Zhang R, Wang X. Significant Reduction of the Dead Layers by the Strain Release in La 0.7Sr 0.3MnO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:39673-39678. [PMID: 35984645 DOI: 10.1021/acsami.2c12899] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Great efforts have been devoted to exploring the emergent phenomena occurring in heterostructures of correlated oxides. However, the presence of both magnetic and electrical dead layers in functional oxide films generally obstructs the device functionalization and miniaturization. Here, we demonstrate an effective strategy to significantly reduce the thickness of dead layers in a prototypical correlated oxide system, La0.7Sr0.3MnO3 (LSMO) grown on LaAlO3 (LAO) substrates, via strain engineering by inserting a Sr3Al2O6 buffer layer with a different thickness at heterointerfaces. In this way, the thicknesses of the magnetic and electrical dead layers of LSMO films on the LAO substrates notably decrease from 8 to 4 unit cells and from 13 to 9 unit cells, respectively. Our results provide a convenient method to minimize or even eliminate the dead layers of correlated oxides through the interfacial strain engineering, which has potential applications in nanoscale oxide spintronic devices.
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Affiliation(s)
- Yongda Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xiao Yuan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Siqi Shan
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Chong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Ruxin Liu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Wenzhuo Zhuang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
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Zurauskiene N, Stankevic V, Kersulis S, Vagner M, Plausinaitiene V, Dobilas J, Vasiliauskas R, Skapas M, Koliada M, Pietosa J, Wisniewski A. Enhancement of Room-Temperature Low-Field Magnetoresistance in Nanostructured Lanthanum Manganite Films for Magnetic Sensor Applications. SENSORS (BASEL, SWITZERLAND) 2022; 22:4004. [PMID: 35684630 PMCID: PMC9185414 DOI: 10.3390/s22114004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 05/20/2022] [Accepted: 05/23/2022] [Indexed: 01/25/2023]
Abstract
The results of colossal magnetoresistance (CMR) properties of La1-xSrxMnyO3 (LSMO) films grown by the pulsed injection MOCVD technique onto an Al2O3 substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal−insulator transition typical for manganites at a certain temperature, Tm. The Tm vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the Tm value obtained. The highest Tm values (270 K) were observed for nanostructured LSMO films with x = 0.17−0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm3), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.
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Affiliation(s)
- Nerija Zurauskiene
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
- Faculty of Electronics, Vilnius Gediminas Technical University, 03227 Vilnius, Lithuania
| | - Voitech Stankevic
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
- Faculty of Electronics, Vilnius Gediminas Technical University, 03227 Vilnius, Lithuania
| | - Skirmantas Kersulis
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
| | - Milita Vagner
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
| | - Valentina Plausinaitiene
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
- Faculty of Chemistry and Geosciences, Vilnius University, 03225 Vilnius, Lithuania
| | - Jorunas Dobilas
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
| | - Remigijus Vasiliauskas
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
| | - Martynas Skapas
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
| | - Mykola Koliada
- Center for Physical Sciences and Technology, 10257 Vilnius, Lithuania; (V.S.); (S.K.); (M.V.); (V.P.); (J.D.); (R.V.); (M.S.); (M.K.)
| | - Jaroslaw Pietosa
- Institute of Physics of the Polish Academy of Sciences, 02-668 Warsaw, Poland; (J.P.); (A.W.)
| | - Andrzej Wisniewski
- Institute of Physics of the Polish Academy of Sciences, 02-668 Warsaw, Poland; (J.P.); (A.W.)
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Greculeasa SG, Stanciu AE, Leca A, Kuncser A, Hrib L, Chirila C, Pasuk I, Kuncser V. Influence of Thickness on the Magnetic and Magnetotransport Properties of Epitaxial La 0.7Sr 0.3MnO 3 Films Deposited on STO (0 0 1). NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3389. [PMID: 34947736 PMCID: PMC8706966 DOI: 10.3390/nano11123389] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 11/29/2021] [Accepted: 12/11/2021] [Indexed: 11/30/2022]
Abstract
Epitaxial La0.7Sr0.3MnO3 films with different thicknesses (9-90 nm) were deposited on SrTiO3 (0 0 1) substrates by pulsed laser deposition. The films have been investigated with respect to morpho-structural, magnetic, and magneto-transport properties, which have been proven to be thickness dependent. Magnetic contributions with different switching mechanisms were evidenced, depending on the perovskite film thickness. The Curie temperature increases with the film thickness. In addition, colossal magnetoresistance effects of up to 29% above room temperature were evidenced and discussed in respect to the magnetic behavior and film thickness.
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Affiliation(s)
| | | | | | | | | | | | | | - Victor Kuncser
- National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania; (S.G.G.); (A.-E.S.); (A.L.); (A.K.); (L.H.); (C.C.); (I.P.)
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Das B, Padhan P. The suppression of spin-orbit coupling effect by the ZnO layer of La 0.7Sr 0.3MnO 3/ZnO heterostructures grown on (001) oriented Si restores the negative magnetoresistance. NANOSCALE 2021; 13:4871-4879. [PMID: 33624651 DOI: 10.1039/d0nr06769e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Dual sign magnetoresistance (MR) and spin-glass state are achieved by stabilizing 120 Å thick La0.7Sr0.3MnO3 (LSMO) film on a (001) oriented Si substrate using pulsed sputtered plasma deposition method. The growth of the ZnO film on top of LSMO suppresses the Curie temperature around 30 K, and reduces the out-of-plane positive MR to zero. On increasing the paramagnetic ZnO film thickness, the out-of-plane negative MR and net magnetic moment increase with the same Curie temperature. At the same time, the band gap decreases, and is attributed to the grain size. The existence of the spin-glass state designates the presence of the non-collinear Mn ion spins, which formed because of the competing double exchange and superexchange interactions. The spin-glass state in the LSMO film is rich in the charge transfer driven localized strong antiferromagnetic coupling at the Si-LSMO interface. The localized strong antiferromagnetic coupling and spin-orbit coupling induced weak antilocalization favor positive MR and reduce the Curie temperature in LSMO. In contrast, the strong magnetic scattering and the loss of the 2D confinement of the charge carrier in LSMO-ZnO heterostructures favor the negative MR. Our investigations show that the technologically important interfacial magnetic coupling and magnetoresistance could be achieved in a bottom interface, and can be manipulated by the top interface of the semiconducting-ferromagnetic-semiconducting heterostructures.
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Affiliation(s)
- Bibekananda Das
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Prahallad Padhan
- Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
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