High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide

Preventing ferroelectric materials from losing their ferroelectricity over a low thickness of several nanometers is crucial in developing multifunctional nanoelectronics. Epitaxially grown 5 at. % yttrium-doped Hf0.5Zr0.5O2 (YHZO) thin films exhibit an atomically smooth surface, an ability to maintain ferroelectricity even at a thickness of 10 nm, and excellent insulating properties, making them suitable for use as gate oxides in ferroelectric thin film transistors (FeTFTs). Through the epitaxial growth of a YHZO/La0.67Sr0.33MnO3 (LSMO)/SrTiO3 (STO) heterostructure, YHZO effectively retains its ferroelectricity and orthorhombic single phase, leading to enhancing electron mobility (∼19.74 cm2 V-1 s-1) and memory window (3.7 V) in the amorphous InGaZnO4 (a-IGZO)/YHZO/LSMO/STO FeTFTs. These FeTFTs demonstrate a consistent memory function with remarkable endurance (∼106 cycles) and retention (∼104 s). Furthermore, they sustain a constant memory window even under ±6 V bias stress for 104 s and exhibit excellent stability even under ±6 V/1 ms pulse cycling for 107 cycles. For comparison, a transistor with the same structure was fabricated using epitaxial nonferroelectric LaAlO3 (LAO) and epitaxial undoped Hf0.5Zr0.5O2 (HZO) as alternatives to YHZO. This study presents a novel approach to exploit the potential of YHZO in FeTFTs, contributing to the development of next-generation logic-in-memory.

Sharp Transformation across Morphotropic Phase Boundary in Sub-6 nm Wake-Up-Free Ferroelectric Films by Atomic Layer Technology

Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB) between antiferroelectric, ferroelectric, and paraelectric phases. By increasing the HfO2 seeding layer with only 2 monolayers, the overlying ZrO2 layer experiences the dramatic phase transition across the MPB. Conspicuous ferroelectric properties including record-high remanent polarization (2Pr ≈ 60 µC cm-2 ), wake-up-free operation, and high compatibility with advanced semiconductor technology nodes, are achieved in the sub-6 nm thin film. The prominent antiferroelectric to ferroelectric phase transformation is ascribed to the in-plane tensile stress introduced into ZrO2 by the HfO2 seeding layer. Based on the high-resolution and high-contrast images of surface grains extracted precisely by helium ion microscopy, the evolution of the MPB between tetragonal, orthorhombic, and monoclinic phases with grain size is demonstrated for the first time. The result indicates that a decrease in the average grain size drives the crystallization from the tetragonal to polar orthorhombic phases.

Comprehensive study on the origin of orthorhombic phase stabilization in Gd-doped HfO2 and DFT calculations

In recent times, ultra-thin films of hafnium oxide (HfO2) have shown ferroelectricity (FE) attributed to the orthorhombic (o) phase of HfO2 with space group Pca21. This polar o-phase could be stabilized in the doped thin film of the oxide. In the present work, both polar and non-polar o-phases of HfO2 could be stabilized in Gd-doped bulk polycrystalline HfO2. Rietveld analysis of XRD data shows that the relative population of o-phases in the presence of the monoclinic (m) phase of HfO2 increases with increasing Gd-content. The local environment around the host atom has been investigated by time differential perturbed angular correlation (TDPAC) spectroscopy, synchrotron based X-ray near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) measurements. Field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) measurements showed a reduction in grain size with increasing Gd-dopant indicating a solute drag effect. It could be established that the segregation of the Gd-dopant in the grain boundary is a thermodynamically favorable process and the solute drag effect plays an important role in nucleation of the o-phase in bulk HfO2. Stabilization of Gd in both Pbca and Pca21 phases of HfO2 was supported by defect formation energy calculations using density functional theory (DFT). The present study has important implications in future applications of HfO2 in ferroelectric devices and in understanding the role of dopants in stabilizing the o-phase of HfO2 in the bulk.

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf_0.5Zr_0.5O₂ thin film by deliberately controlling the termination of the bottom La_0.67Sr_0.33MnO₃ layer. We find that the Hf_0.5Zr_0.5O₂ films on the MnO₂-terminated La_0.67Sr_0.33MnO₃ have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La_0.67Sr_0.33MnO₃, while with no wake-up effect. Even though the Hf_0.5Zr_0.5O₂ thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO₂ termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf_0.5Zr_0.5O₂/ La_0.67Sr_0.33MnO₃ interface and hole doping of the Hf_0.5Zr_0.5O₂ layer resulting from the MnO₂ interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf_0.5Zr_0.5O₂. We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.

Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks

Hardware-based neural networks (NNs) can provide a significant breakthrough in artificial intelligence applications due to their ability to extract features from unstructured data and learn from them. However, realizing complex NN models remains challenging because different tasks, such as feature extraction and classification, should be performed at different memory elements and arrays. This further increases the required number of memory arrays and chip size. Here, we propose a three-dimensional ferroelectric NAND (3D FeNAND) array for the area-efficient hardware implementation of NNs. Vector-matrix multiplication is successfully demonstrated using the integrated 3D FeNAND arrays, and excellent pattern classification is achieved. By allocating each array of vertical layers in 3D FeNAND as the hidden layer of NN, each layer can be used to perform different tasks, and the classification of color-mixed patterns is achieved. This work provides a practical strategy to realize high-performance and highly efficient NN systems by stacking computation components vertically.

On the switching dynamics of epitaxial ferroelectric CeO2-HfO2 thin film capacitors

Epitaxial layers of ferroelectric orthorhombic HfO₂ are frequently investigated as model systems for industrially more relevant polycrystalline films. The recent success in stabilizing the orthorhombic phase in the solid-solution cerium oxide - hafnium oxide system allows detailed investigations of external influences during fabrication. This report analyzes the ferroelectric properties of two thin film capacitors, which were post-deposition annealed in N₂ and O₂ atmospheres to achieve the orthorhombic phase after room temperature deposition. The samples, which exhibit very similar constituent phase, appear identical in conventional polarization-field hysteresis measurements. However, a significant switching speed difference is observed in pristine devices. Continued field cycling reduces the difference. Deeper analysis of switching transients based on the Nucleation Limited Switching model suggests that the O₂ heat treatment atmosphere results in an altered oxygen vacancy profile, which is reverted during ferroelectric cycling.

Hafnium Oxide (HfO2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium oxide (HfO₂ ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO₂ in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO₂ equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO₂ domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO₂ materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO₂ -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

Novel Fluorite-Structured Materials for Solid-State Refrigeration

Refrigeration based on the electrocaloric effect can offer many advantages over conventional cooling technologies in terms of efficiency, size, weight, and power source. The discovery of ferroelectric and antiferroelectric properties in fluorite-based materials in 2011 has led to diverse applications related to memory (e.g., ferroelectric tunnel junctions, nonvolatile memory, and field-effect transistors) and energy fields (e.g., energy storage and harvesting, electrocaloric refrigeration, and infrared detection). Fluorite-based materials exhibit several properties not shared by most conventional materials (such as in terms of compatibility with complementary metal-oxide semiconductors and 3D nanostructures, deposition thickness at the nanometer scale, and simple composition). Here, the electrocaloric refrigeration properties of fluorite-based ferroelectric/antiferroelectric materials are reviewed by focusing on the advantages of ZrO₂ - and HfO₂ -based materials (e.g., relative to conventional perovskite- and polymer-based counterparts). Finally, the recent progress made in this research field are also discussed along with its future perspectives.

Improved polarization and endurance in ferroelectric Hf0.5Zr0.5O2 films on SrTiO3(110)

The metastable orthorhombic phase of Hf_0.5Zr_0.5O₂ (HZO) can be stabilized in thin films on La_0.67Sr_0.33MnO₃ (LSMO) buffered (001)-oriented SrTiO₃ (STO) by intriguing epitaxy that results in (111)-HZO oriented growth and robust ferroelectric properties. Here, we show that the orthorhombic phase can also be epitaxially stabilized on LSMO/STO(110), presenting the same out-of-plane (111) orientation but a different distribution of the in-plane crystalline domains. The remanent polarization of HZO films with a thickness of less than 7 nm on LSMO/STO(110) is 33 μC cm^-3, which corresponds to a 50% improvement over equivalent films on LSMO/STO(001). Furthermore, HZO on LSMO/STO(110) presents higher endurance, switchable polarization is still observed up to 4 × 10¹⁰ cycles, and retention of more than 10 years. These results demonstrate that tuning the epitaxial growth of ferroelectric HfO₂, here using STO(110) substrates, allows the improvement of functional properties of relevance for memory applications.

High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2devices by control of oxygen-deficient layer

The formation of an interfacial layer is believed to affect the ferroelectric properties in HfO₂based ferroelectric devices. The atomic layer deposited devices continue suffering from a poor bottom interfacial condition, since the formation of bottom interface is severely affected by atomic layer deposition and annealing process. Herein, the formation of bottom interfacial layer was controlled through deposition of different bottom electrodes (BE) in device structure W/HZO/BE. The transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy analyses done on devices W/HZO/W and W/HZO/IrO_xsuggest the strong effect of IrO_xin controlling bottom interfacial layer formation while W/HZO/W badly suffers from interfacial layer formation. W/HZO/IrO_xdevices show high remnant polarization (2P_r) ∼ 53μC cm^-2, wake-up free endurance cycling characteristics, low leakage current with demonstration of low annealing temperature requirement as low as 350 °C, valuable for back-end-of-line integration. Further, sub-5 nm HZO thicknesses-based W/HZO/IrO_xdevices demonstrate high 2P_rand wake-up free ferroelectric characteristics, which can be promising for low power and high-density memory applications. 2.2 nm, 3 nm, and 4 nm HZO based W/HZO/IrO_xdevices show 2P_rvalues 13.54, 22.4, 38.23μC cm^-2at 4 MV cm^-1and 19.96, 30.17, 48.34μC cm^-2at 5 MV cm^-1, respectively, with demonstration of wake-up free ferroelectric characteristics.

Impact of La Concentration on Ferroelectricity of La-Doped HfO2 Epitaxial Thin Films

Epitaxial thin films of HfO₂ doped with La have been grown on SrTiO₃(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm². The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 10¹⁰ cycles is obtained in 5 at. % La-doped films.

Defects in ferroelectric HfO2

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the expectations of developing competitive ferroelectric non-volatile memory devices. To date, it is widely accepted that the performance of HfO2-based ferroelectric devices during their life cycle is critically dependent on the presence of point defects as well as structural phase polymorphism, which mainly originates from defects either. The purpose of this review article is to overview the impact of defects in ferroelectric HfO2 on its functional properties and the resulting performance of memory devices. Starting from the brief summary of defects in classical perovskite ferroelectrics, we then introduce the known types of point defects in dielectric HfO2 thin films. Further, we discuss main analytical techniques used to characterize the concentration and distribution of defects in doped ferroelectric HfO2 thin films as well as at their interfaces with electrodes. The main part of the review is devoted to the recent experimental studies reporting the impact of defects in ferroelectric HfO2 structures on the performance of different memory devices. We end up with the summary and perspectives of HfO2-based ferroelectric competitive non-volatile memory devices.

Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics

Flourite-structure ferroelectrics (FEs) and antiferroelectrics (AFEs) such as HfO₂ and its variants have gained copious attention from the semiconductor community, because they enable complementary metal-oxide-semiconductor (CMOS)-compatible platforms for high-density, high-performance non-volatile and volatile memory technologies. While many individual experiments have been conducted to characterize and understand fluorite-structure FEs and AFEs, there has been little effort to aggregate the information needed to benchmark and provide insights into their properties. We present a fast and robust modeling framework that automatically fits the Preisach model to the experimental polarization (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$Q_{FE}$$\end{document}QFE) versus electric field (\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$E_{FE}$$\end{document}EFE) hysteresis characterizations of fluorite-structure FEs. The modifications to the original Preisach model allow the double hysteresis loops in fluorite-structure antiferroelectrics to be captured as well. By fitting the measured data reported in the literature, we observe that ferroelectric polarization and dielectric constant decrease as the coercive field rises in general.

Influence of Applied Stress on the Ferroelectricity of Thin Zr-Doped HfO2 Films

HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material’s inherent fatigue properties have limited its potential for device application. This paper systematically investigates the effects of tensile stress and annealing temperature on the endurance and ferroelectric properties faced by Zr-doped HfO2 ferroelectric film. The remnant polarization (Pr) shows an increasing trend with annealing temperature, while the change in the coercive electric field (Ec) is not obvious in terms of the relationship with tensile stress or annealing temperature. In addition, the application of tensile stress does help to improve the endurance characteristics by about two orders of magnitude for the ferroelectric material, and the endurance properties show a tendency to be negatively correlated with annealing temperature. Overall, although the effect of stress on the ferroelectricity of a HZO material is not obvious, it has a great influence on its endurance properties and can optimize the endurance of the material, and ferroelectricity exhibits a higher dependence on temperature. The optimization of the endurance properties of HZO materials by stress can facilitate their development and application in future integrated circuit technology.

Probing the solute-drag effect and its role in stabilizing the orthorhombic phase in bulk La-doped HfO2 by X-ray and gamma ray spectroscopy

The recent observation of ferroelectricity in ultra thin films of hafnium oxide (HfO2) has been attributed to the orthorhombic (o) phase of HfO2 with space group Pca21. Although this oxide is polymorphic in nature, this polar o-phase is known to be stabilized in the doped thin film oxide. The objective of the present experiment is to stabilize the o-phases in La doped bulk polycrystalline HfO2 and investigate their evolution with the doping concentration through Time Differential Perturbed Angular Correlation (TDPAC), X-ray Absorption Near Edge Structure (XANES) and Extended X-ray Absorption Fine Structure (EXAFS) measurements. The present work reports the presence of both the polar Pca21 phase and the antipolar Pbca phase at different La-concentrations. Two o-phases of HfO2 with space groups Pca21 and Pbca, difficult to distinguish by other complimentary methods, could be unambiguously identified by utilizing the atomic scale sensitivity of the electric field gradient (EFG) embedded in TDPAC spectroscopy. The determination of the oxidation state and the local environment of La-atoms by XANES and EXAFS measurements illuminates the microscopic role of the dopant in stabilizing the o-phase. The "solute drag model" proposes a critical crystallite size for the nucleation of the o-phase in bulk HfO2 and explains the role of the La-dopant in stabilizing the o-phase. Thus the present study shows the possibility of stabilizing the polar o-phase and hence attaining ferroelectricity in bulk HfO2 to augment the scope of future application for this ferroelectric device.