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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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2
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Dou H, Lin Z, Hu Z, Tsai BK, Zheng D, Song J, Lu J, Zhang X, Jia Q, MacManus-Driscoll JL, Ye PD, Wang H. Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO 2-Based Artificial Neurons. NANO LETTERS 2023; 23:9711-9718. [PMID: 37875263 PMCID: PMC10636789 DOI: 10.1021/acs.nanolett.3c02217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2023] [Revised: 09/20/2023] [Indexed: 10/26/2023]
Abstract
Filamentary-type resistive switching devices, such as conductive bridge random-access memory and valence change memory, have diverse applications in memory and neuromorphic computing. However, the randomness in filament formation poses challenges to device reliability and uniformity. To overcome this issue, various defect engineering methods have been explored, including doping, metal nanoparticle embedding, and extended defect utilization. In this study, we present a simple and effective approach using self-assembled uniform Au nanoelectrodes to controll filament formation in HfO2 resistive switching devices. By concentrating the electric field near the Au nanoelectrodes within the BaTiO3 matrix, we significantly enhanced the device stability and reduced the threshold voltage by up to 45% in HfO2-based artificial neurons compared to the control devices. The threshold voltage reduction is attributed to the uniformly distributed Au nanoelectrodes in the insulating matrix, as confirmed by COMSOL simulation. Our findings highlight the potential of nanostructure design for precise control of filamentary-type resistive switching devices.
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Affiliation(s)
- Hongyi Dou
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Zehao Lin
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Zedong Hu
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Benson Kunhung Tsai
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Dongqi Zheng
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Jiawei Song
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Juanjuan Lu
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Xinghang Zhang
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Quanxi Jia
- Department
of Materials Design and Innovation, School of Engineering and Applied
Sciences, University at Buffalo, The State
University of New York, Buffalo, New York 14260, United States
| | | | - Peide D. Ye
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School
of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Elmore
School of Electrical Engineering, Purdue
University, West Lafayette, Indiana 47907, United States
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Liu J, Cao Y, Tang YL, Zhu YL, Wang Y, Liu N, Zou MJ, Shi TT, Liu F, Gong F, Feng YP, Ma XL. Room-Temperature Ferroelectricity of Paraelectric Oxides Tailored by Nano-Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4226-4233. [PMID: 36633961 DOI: 10.1021/acsami.2c19944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Inducing clear ferroelectricity in the quantum paraelectric SrTiO3 is important for triggering methods to discover hidden phases in condensed matter physics. Several methods such as isotope substitution and freestanding membranes could introduce ferroelectricity in SrTiO3 toward nonvolatile memory applications. However, the stable transformation from quantum paraelectric SrTiO3 to ferroelectricity SrTiO3 at room temperature still remains challenging. Here, we used multiple nano-engineering in (SrTiO3)0.65/(CeO2)0.35 films to achieve an emergent room-temperature ferroelectricity. It is shown that the CeO2 nanocolumns impose large out-of-plane strains and induce Sr/O deficiency in the SrTiO3 matrix to form a clear tetragonal structure, which leads to an apparent room-temperature ferroelectric polarization up to 2.5 μC/cm2. In collaboration with density functional theory calculations, it is proposed that the compressive strains combined with elemental deficiency give rise to local redistribution of charge density and orbital order, which induce emergent tetragonality of the strained SrTiO3. Our work thus paves a pathway for architecting functional systems in perovskite oxides using a multiple nano-design.
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Affiliation(s)
- Jiaqi Liu
- Shenyang National Laboratory for Materials Science and Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Yi Cao
- Shenyang National Laboratory for Materials Science and Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science and Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Yin-Lian Zhu
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science and Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Nan Liu
- Shenyang National Laboratory for Materials Science and Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Tong-Tong Shi
- Shenyang National Laboratory for Materials Science and Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Fang Liu
- Shenyang National Laboratory for Materials Science and Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Fenghui Gong
- Shenyang National Laboratory for Materials Science and Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiu-Liang Ma
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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Li M, Qiu C, Dogel S, Chen P, Perovic DD, Howe JY. Microstructure-Dependent Thermal Stability of Super-Tetragonal Nanocomposite Films through In Situ TEM/EELS Study. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52316-52323. [PMID: 36351083 DOI: 10.1021/acsami.2c16084] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Smart microstructure design in nanocomposite films allows us to tailor physical properties such as ferroelectricity and thermal stability to broaden applications of next-generation electronic devices. Here, we study the thermal stability of self-assembled PbTiO3 (PTO)/PbO nanocomposite films with nano-spherical and nanocolumnar microstructures by utilizing an environmental transmission electron microscopy (TEM) combined with electron energy loss spectroscopy (EELS). The real-time study reveals that the microstructure-dependent interphase strain has an effect on the stabilization of the tetragonal phase. Compared to the nano-spherical configuration, the nanocomposite film with the nanocolumnar microstructure can maintain the giant tetragonality of ∼1.20 up to 450 °C, and the tetragonal phase is predicted to be stable at elevated temperatures > 600 °C. Moreover, the temperature-dependent EELS further demonstrates the sensitivity of the chemical bonding of Pb and Ti with O to the PTO lattice distortion, correlating the structural variation and electronic properties at different temperatures. Such in situ heating TEM study provides insights into the thermal stability of nanocomposites with different microstructures and facilitates the advancement of power electronics applications in harsh environments.
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Affiliation(s)
- Mengsha Li
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada
| | - Chenyue Qiu
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada
| | - Stas Dogel
- Hitachi High Tech Canada Inc., Etobicoke, Ontario M9W 6A4, Canada
| | - Pingfan Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 230601 Hefei, Anhui, China
| | - Doug D Perovic
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada
| | - Jane Y Howe
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4, Canada
- Department of Chemical Engineering and Applied Chemistry, University of Toronto, Toronto, Ontario M5S 3E5, Canada
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5
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Enriquez E, Lu P, Li L, Zhang B, Wang H, Jia Q, Chen A. Reducing leakage current and enhancing polarization in multiferroic 3D super-nanocomposites by microstructure engineering. NANOTECHNOLOGY 2022; 33:405604. [PMID: 35313284 DOI: 10.1088/1361-6528/ac5f98] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Accepted: 03/21/2022] [Indexed: 06/14/2023]
Abstract
Multiferroic materials have generated great interest due to their potential as functional device materials. Nanocomposites have been increasingly used to design and generate new functionalities by pairing dissimilar ferroic materials, though the combination often introduces new complexity and challenges unforeseeable in single-phase counterparts. The recently developed approaches to fabricate 3D super-nanocomposites (3D-sNC) open new avenues to control and enhance functional properties. In this work, we develop a new 3D-sNC with CoFe2O4(CFO) short nanopillar arrays embedded in BaTiO3(BTO) film matrix via microstructure engineering by alternatively depositing BTO:CFO vertically-aligned nanocomposite layers and single-phase BTO layers. This microstructure engineering method allows encapsulating the relative conducting CFO phase by the insulating BTO phase, which suppress the leakage current and enhance the polarization. Our results demonstrate that microstructure engineering in 3D-sNC offers a new bottom-up method of fabricating advanced nanostructures with a wide range of possible configurations for applications where the functional properties need to be systematically modified.
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Affiliation(s)
- Erik Enriquez
- Department of Physics and Astronomy, University of Texas-Rio Grande Valley (UTRGV), Edinburg, TX-78539, United States of America
| | - Ping Lu
- Sandia National Laboratories, Albuquerque, New Mexico NM-87185, United States of America
| | - Leigang Li
- School of Materials Engineering, Purdue University, West Lafayette, Indiana IN-47907, United States of America
| | - Bruce Zhang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana IN-47907, United States of America
| | - Haiyan Wang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana IN-47907, United States of America
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY-14260, United States of America
- Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Aiping Chen
- Center for Integrated Nanotechnology (CINT), Los Alamos National Laboratory, Los Alamos, NM-87545, United States of America
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Ma CH, Liao YK, Zheng Y, Zhuang S, Lu SC, Shao PW, Chen JW, Lai YH, Yu P, Hu JM, Huang R, Chu YH. Synthesis of a New Ferroelectric Relaxor Based on a Combination of Antiferroelectric and Paraelectric Systems. ACS APPLIED MATERIALS & INTERFACES 2022; 14:22278-22286. [PMID: 35523210 DOI: 10.1021/acsami.2c02281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Relaxor ferroelectric-based energy storage systems are promising candidates for advanced applications as a result of their fast speed and high energy storage density. In the research field of ferroelectrics and relaxor ferroelectrics, the concept of solid solution is widely adopted to modify the overall properties and acquire superior performance. However, the combination between antiferroelectric and paraelectric materials was less studied and discussed. In this study, paraelectric barium hafnate (BaHfO3) and antiferroelectric lead hafnate (PbHfO3) are selected to demonstrate such a combination. A paraelectric to relaxor ferroelectric, to ferroelectric, and to antiferroelectric transition is observed by varying the composition x in the (Ba1-xPbx)HfO3 solid solution from 0 to 100%. It is noteworthy that ferroelectric phases can be realized without primal ferroelectric material. This study creates an original solid solution system with a rich spectrum of competing phases and demonstrates an approach to design relaxor ferroelectrics for energy storage applications and beyond.
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Affiliation(s)
- Chun-Hao Ma
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yi-Kai Liao
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yunzhe Zheng
- Key Laboratory of Polar Materials and Devices, Department of Optoelectronics, East China Normal University, Shanghai 200241, People's Republic of China
| | - Shihao Zhuang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Si-Cheng Lu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Pao-Wen Shao
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Jia-Wei Chen
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yu-Hong Lai
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jia-Mian Hu
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices, Department of Optoelectronics, East China Normal University, Shanghai 200241, People's Republic of China
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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7
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Strain Engineering: A Pathway for Tunable Functionalities of Perovskite Metal Oxide Films. NANOMATERIALS 2022; 12:nano12050835. [PMID: 35269323 PMCID: PMC8912649 DOI: 10.3390/nano12050835] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 02/14/2022] [Accepted: 02/24/2022] [Indexed: 11/16/2022]
Abstract
Perovskite offers a framework that boasts various functionalities and physical properties of interest such as ferroelectricity, magnetic orderings, multiferroicity, superconductivity, semiconductor, and optoelectronic properties owing to their rich compositional diversity. These properties are also uniquely tied to their crystal distortion which is directly affected by lattice strain. Therefore, many important properties of perovskite can be further tuned through strain engineering which can be accomplished by chemical doping or simply element substitution, interface engineering in epitaxial thin films, and special architectures such as nanocomposites. In this review, we focus on and highlight the structure–property relationships of perovskite metal oxide films and elucidate the principles to manipulate the functionalities through different modalities of strain engineering approaches.
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