Two-dimensional magnetic materials: structures, properties and external controls

Spin-Glass States Generated in a van der Waals Magnet by Alkali-Ion Intercalation

Tuning magnetic properties in layered van der Waals (vdW) materials has captured significant attention due to the efficient control of ground states by heterostructuring and external stimuli. Electron doping by electrostatic gating, interfacial charge transfer, and intercalation is particularly effective in manipulating the exchange and spin-orbit properties, resulting in a control of Curie temperature (TC) and magnetic anisotropy. Here, an uncharted role of intercalation is discovered to generate magnetic frustration. As a model study, Na atoms are intercalated into the vdW gaps of pristine Cr2Ge2Te6 (CGT) where generated magnetic frustration leads to emerging spin-glass states coexisting with a ferromagnetic order. A series of dynamic magnetic susceptibility measurements/analysis confirms the formation of magnetic clusters representing slow dynamics with a distribution of relaxation times. The intercalation also modifies other macroscopic physical parameters including the significant enhancement of TC from 66 to 240 K and the switching of magnetic easy-hard axis direction. This study identifies intercalation as a unique route to generate emerging frustrated spin states in simple vdW crystals.

Acoustomagnonic Spin Hall Effect in Honeycomb Antiferromagnets

The recently discovered Van der Waals antiferromagnets have suffered from the lack of a comprehensive method to study their magnetic properties. Here, we propose an ac intrinsic magnon spin Hall current driven by surface acoustic waves as a novel probe for such antiferromagnets. Our results pave the way towards mechanical detection and manipulation of the magnetic order in two-dimensional antiferromagnets. Furthermore, they will overcome the difficulties with weak magnetic responses inherent in the use of antiferromagnets and hence provide a building block for future antiferromagnetic spintronics.

Prediction of intrinsic room-temperature ferromagnetism in two-dimensional CrInX2 (X = S, Se, Te) monolayers

Herein, using density functional theory, novel two-dimensional (2D) CrInX2 (X = S, Se, Te) structures are predicted to be practical ferromagnetic (FM) semiconductors. Phonon vibrations and molecular dynamics simulations verified their structural and thermodynamic stability. Sizable fully spin-polarized band gaps of 1.03 and 0.69 eV are found for CrInS2 and CrInSe2, while CrInTe2 exhibits half-metallic band nature (at 0 K with a perfect lattice). The high magnetic anisotropy energies are responsible for their long-range spin polarization. The Curie temperatures (Tc) are estimated to be 347, 397 and 447 K for CrInS2, CrInSe2 and CrInTe2, respectively, all well above the room-temperature. The high Tc originates from unusual FM direct exchange, the efficient super-exchange coupling between neighboring Cr eg-orbitals with zero virtual exchange gaps and the presence of dual Cr-X-Cr super-exchange channels. Our systematic study of the CrInX2 monolayer suggests that it could be a promising material for spintronics applications.

The structural stability of Mn3Sn Heusler compound under high pressure

Pressure engineering has attracted growing interest in the understanding of structural changes and structure-property relations of layered materials. In this study, we investigated the effect of pressure on the crystal structure of Mn3Sn.In-situhigh-pressure x-ray diffraction experiments revealed that Mn3Sn maintained hexagonal lattice symmetry within the pressure range of ambient to 50.4 GPa. The ratio of lattice constantsc/ais almost independent of the pressure and remains constant at 0.80, indicating a stable cell shape. Density functional theory calculations revealed the strong correlation between the crystal structure and the localization ofdelectrons. The Mn3Sn has been found in flat energy bands near the Fermi level, exhibiting a large density of states (DOS) primarily contributed by thedelectrons. This large DOS near the Fermi level increases the energy barrier for a phase transition, making the transition from the hexagonal phase to the tetragonal phase challenging. Our results confirm the structural stability of Mn3Sn under high pressure, which is beneficial to the robustness of spintronic devices.

Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature

The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.

Surface Stability and Exfoliability of Non-van der Waals Magnetic Chromium Tellurides

Exfoliation of two-dimensional (2D) magnetic materials from non-van der Waals (non-vdW) materials has attracted increasing attention because it provides a great platform for the construction of 2D magnetic materials. For non-vdW magnetic chromium tellurides with high Curie temperatures, their few-layer samples show promising applications in the field of spintronics. However, there is still no consensus on whether the surface structures of few-layer chromium tellurides should be terminated by Cr or Te atoms. By calculating the surface and exfoliation energy, we find that which structure is more stable depends greatly on the value of the chemical potential of Te atoms, and the few-layer sample with a Cr-terminated surface is easier to exfoliate than that with both Te-terminated surfaces. Finally, we propose that different exfoliated structures can be identified by using the atomic number ratio of Cr to Te and the average magnetic moment of Cr atoms in few-layer samples.

Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

The discovery of ferromagnetism in two-dimensional (2D) van der Waals crystals has generated widespread interest. The seeking of robust 2D ferromagnets with high Curie temperature (Tc) is vitally important for next-generation spintronic devices. However, owing to the enhanced spin fluctuation and weak exchange interaction upon the reduced dimensionalities, the exploring of robust 2D ferromagnets with Tc > 300 K is highly demanded but remains challenging. In this work, we fabricated air-stable 2D Cr5Te8/CrTe2 vertical heterojunctions with Tc above 400 K by the chemical vapor deposition method. Transmission electron microscopy demonstrates a high-quality-crystalline epitaxial structure between tri-Cr5Te8 and 1T-CrTe2 with striped moiré patterns and a superior ambient stability over six months. A built-in dual-axis strain together with strong interfacial coupling cooperatively leads to a record-high Tc for the CrxTey family. A temperature-dependent spin-flip process induces the easy axis of magnetization to rotate from the out-of-plane to the in-plane direction, indicating a phase-dependent proximity coupling effect, rationally interpreted by first-principles calculations of the magnetic anisotropy of a tri-Cr5Te8 and 1T-CrTe2 monolayer. Our results provide a material realization of effectively enhancing the transition temperature of 2D ferromagnetism and manipulating the spin-flip of the easy axis, which will facilitate future spintronic applications.

First-principles study of two-dimensional half-metallic ferromagnetism in CrSiSe4monolayer

Two-dimensional (2D) ferromagnetic (FM) half-metallic materials have attracted intensive attention due to their unique electronic and magnetic properties and potential applications in spintronic devices. In this study, we predicted a stable 2D half-metallic material monolayer CrSiSe4using first-principles density functional theory. The structure, electronic and magnetic properties were systematically studied. The calculations show that the monolayer CrSiSe4is a dynamically stable FM half-metallic material. The spin-dependent transport properties and the Curie temperature up to 239 K are demonstrated. The spin band gap of monolayer CrSiSe4was about 0.83 eV by the the Heyd-Scuseria-Ernzerhof function calculation. The magnetic anisotropy energy of each Cr atom in the monolayer of CrSiSe4is-552.3μeV. When the applied biaxial tensile strain is greater than 2%, monolayer CrSiSe4spin-up conduction band and valence band will show a band gap at the Fermi level, and the electronic properties change from a half-metal to a semiconductor. Thus, the monolayer CrSiSe4can provide an ideal candidate material for exploring 2D magnetic and spintronics experiments.

Intrinsic half-metallicity in two-dimensional Cr2TeX2 (X = I, Br, Cl) monolayers

Two-dimensional (2D) materials with intrinsic half-metallicity at or above room temperature are important in spin nanodevices. Nevertheless, such 2D materials in experiment are still rarely realized. In this work, a new family of 2D Cr2TeX2 (X = I, Br, Cl) monolayers has been predicted using first-principles calculations. The monolayer is made of five atomic sublayers with ABCAB-type stacking along the perpendicular direction. It is found that the energies for all the ferromagnetic (FM) half-metallic states are the lowest. The phonon spectrum calculations and molecular dynamics simulations both demonstrate that the FM states are stable, indicating the possibility of experimentally obtaining the 2D Cr2TeX2 monolayers with half-metallicity. The Curie temperatures from Monte Carlo simulations are 486, 445, and 451 K for Cr2TeI2, Cr2TeBr2, and Cr2TeCl2 monolayers, respectively, and their half-metallic bandgaps are 1.72, 1.86 and 1.90 eV. The corresponding magnetocrystalline anisotropy energies (MAEs) are about 1185, 502, 899 μeV per Cr atom for Cr2TeX2 monolayers, in which the easy axes are along the plane for the Cr2TeBr2 and Cr2TeCl2 monolayers, but being out of the plane in the Cr2TeI2. Our study implies the potential application of the 2D Cr2TeX2 (X = I, Br, Cl) monolayers in spin nanodevices.

Intrinsic Nonlinear Hall Detection of the Néel Vector for Two-Dimensional Antiferromagnetic Spintronics

The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspires us to exploit 2D antiferromagnetic spintronics. However, the detection of the Néel vector in 2D antiferromagnets remains a great challenge because the measured signals usually decrease significantly in the 2D limit. Here we propose that the Néel vector of 2D antiferromagnets can be efficiently detected by the intrinsic nonlinear Hall (INH) effect which exhibits unexpected significant signals. As a specific example, we show that the INH conductivity of the monolayer manganese chalcogenides MnX (X=S, Se, Te) can reach the order of nm·mA/V^{2}, which is orders of magnitude larger than experimental values of paradigmatic antiferromagnetic spintronic materials. The INH effect can be accurately controlled by shifting the chemical potential around the band edge, which is experimentally feasible via electric gating or charge doping. Moreover, we explicitly demonstrate its 2π-periodic dependence on the Néel vector orientation based on an effective k·p model. Our findings enable flexible design schemes and promising material platforms for spintronic memory device applications based on 2D antiferromagnets.

Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures and unique properties. For emerging spintronics applications, materials with excellent room-temperature ferromagnetism are required. Although most transition metal compounds do not possess room-temperature ferromagnetism on their own, they are widely modified by researchers using the emerging strategies to engineer or modulate their intrinsic properties. This paper reviews recent enhancement approaches to induce magnetism in 2D TMDs, mainly using doping, vacancy defects, composite of heterostructures, phase modulation, and adsorption, and also by electron irradiation induction, O plasma treatment, etc. On this basis, the produced effects of these methods for the introduction of magnetism into 2D TMDs are compressively summarized and constructively discussed. For perspective, research on magnetic doping techniques for 2D TMDs materials should be directed toward more reliable and efficient directions, such as exploring advanced design strategies to combine dilute magnetic semiconductors, antiferromagnetic semiconductors, and superconductors to develop new types of heterojunctions; and advancing experimentation strategies to fabricate the designed materials and enable their functionalities with simultaneously pursuing the upscalable growth methods for high-quality monolayers to multilayers.

Stacking influence on the in-plane magnetic anisotropy in a 2D magnetic system

The magnetization patterns on three atomic layers thick islands of Co on Ru(0001) are studied by spin-polarized low-energy electron microscopy (SPLEEM). In-plane magnetized micrometer wide triangular Co islands are grown on Ru(0001). They present two different orientations correlated with two different stacking sequences which differ only in the last layer position. The stacking sequence determines the type of magnetization pattern observed: the hcp islands present very wide domain walls, while the fcc islands present domains separated by much narrower domain walls. The former is an extremely low in-plane anisotropy system. We estimate the in-plane magnetic anisotropy of the fcc regions to be 1.96 × 10⁴ J m^-3 and of the hcp ones to be 2.5 × 10² J m^-3.

Pressure-Induced Structural Phase Transition and Enhanced Interlayer Coupling in Two-Dimensional Ferromagnet CrSiTe3

The two-dimensional van der Waals ferromagnetic semiconductor CrSiTe₃ has attracted growing interest as an intrinsic topological magnet. Both superconductivity and enhancement of ferromagnetism, usually competing for orders, have been observed in CrSiTe₃ at high pressure. However, the high-pressure structure of CrSiTe₃ is still unclear, setting obstacles in understanding pressure-induced novel physics. Here, combining the Raman spectra and first-principles calculations, the structure of CrSiTe₃ at high pressure has been clarified. The interlayer breathing mode located at ∼42.1 cm^-1 has been observed for the first time in CrSiTe₃ by ultralow-frequency Raman spectroscopy at high pressure. Theoretical calculations confirm a phase transition from the R3̅ phase to the R3 phase accompanying noticeable enhancement of the Curie temperature. Our results highlight ultralow-frequency Raman spectroscopy combined with high pressure for detecting and modulating the structure and interlayer coupling of two-dimensional materials.

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties

Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.

Two-dimensional chalcogenide-based ferromagnetic semiconductors

Two-dimensional (2D) magnetic materials draw an enormous amount of attention due to their novel physical properties and potential spintronics device applications. Room-temperature ferromagnetic (FM) semiconductors have long been pursued in 2D magnetic materials, which show a long range magnetic order down to atomic-layer thickness. The intrinsic ferromagnetism has been predicted in a series of 2D materials and verified in experiments and the magnetism can be modulated by multiple physical fields, exhibiting promising application prospects. In this review, we overview several types of 2D chalcogenide-based FM semiconductors discovered in recent years. We summary and compare their basic physical properties, including the crystal structures, electronic structures, and mechanical stability. The 2D magnetism can be described by several physical models. We also focus on the recent progresses about theoretical prediction of FM semiconductors and experimental observation of external-field regulation. Most of investigations have shown that 2D chalcogenide-based FM semiconductors have relatively high Curie temperature (Tc) and structural stability. These materials are promising to realize the room-temperature ferromagnetism in atomic-layer thickness, which is significant to design spintronics devices.

Interlayer Coupling Induced Sharp Increase of the Curie Temperature in a Two-Dimensional MnSn Multilayer

The MnSn monolayer synthesized recently is a novel two-dimensional ferromagnetic material with a hexagonal lattice, in which three Mn atoms come together to form a trimer, making it remarkably different from other magnetic two-dimensional materials. Most impressively, there occurs a sharp increase of the Curie temperature from 54 to 225 K when the number of layers increases from 1 to 3. However, no quantitative explanation has been reported in previous studies. Herein, by means of the first-principles calculation method and the Monte Carlo method, we demonstrate that strong interlayer ferromagnetic coupling plays an essential role in enhancing its critical temperature, which acts as a magnetic field to stabilize the ferromagnetism in MnSn multilayers. Our work not only explains the sharp increase of the Curie temperature of the MnSn film in experiments but also reveals that the interlayer coupling is a new routine to achieve high-temperature ferromagnetism in two-dimensional materials.

Strain-mediated oxygen evolution reaction on magnetic two-dimensional monolayers

By screening 56 magnetic 2D monolayers through first-principles calculations, it was found that 8 magnetic 2D monolayers (CoO₂, FeO₂, FeSe, FeTe, VS₂, VSe₂, VTe₂ and CrSe₂) can bind O*, OH* and OOH* intermediates of the oxygen evolution reaction (OER), in which the overpotentials of CoO₂, FeO₂, VSe₂, and VTe₂ monolayers are 0.684, 1.107, 0.863 and 0.837 V, respectively. After applying suitable biaxial tensile strains, the overpotentials of CoO₂, FeO₂ and VTe₂ monolayers are reduced over 40%. In particular, the overpotentials of CoO₂ and VTe₂ monolayers decrease to 0.372 V and 0.491 V under the biaxial tensile strains of 4.0% and 3.0%, respectively, which are comparable to the reported overpotentials of noble metal and low-dimensional materials. Tensile strains modify the potential determining step for the OER and enhance the catalytic activity of metal atoms of magnetic 2D monolayers. Magnetic 2D monolayers could be activated by strain engineering as catalysts for the OER.

Two-dimensional spin-gapless semiconductors: A mini-review

In the past decade, two-dimensional (2D) materials and spintronic materials have been rapidly developing in recent years. 2D spin-gapless semiconductors (SGSs) are a novel class of ferromagnetic 2D spintronic materials with possible high Curie temperature, 100% spin-polarization, possible one-dimensional or zero-dimensional topological signatures, and other exciting spin transport properties. In this mini-review, we summarize a series of ideal 2D SGSs in the last 3 years, including 2D oxalate-based metal-organic frameworks, 2D single-layer Fe₂I_2, 2D Cr₂X₃ (X = S, Se, and Te) monolayer with the honeycomb kagome (HK) lattice, 2D CrGa₂Se₄ monolayer, 2D HK Mn–cyanogen lattice, 2D MnNF monolayer, and 2D Fe₄N₂ pentagon crystal. The mini-review also discusses the unique magnetic, electronic, topological, and spin-transport properties and the possible application of these 2D SGSs. The mini-review can be regarded as an improved understanding of the current state of 2D SGSs in recent 3 years.

Dynamic magnetic crossover at the origin of the hidden-order in van der Waals antiferromagnet CrSBr

The van-der-Waals material CrSBr stands out as a promising two-dimensional magnet. Here, we report on its detailed magnetic and structural characteristics. We evidence that it undergoes a transition to an A-type antiferromagnetic state below T_N ≈ 140 K with a pronounced two-dimensional character, preceded by ferromagnetic correlations within the monolayers. Furthermore, we unravel the low-temperature hidden-order within the long-range magnetically-ordered state. We find that it is associated to a slowing down of the magnetic fluctuations, accompanied by a continuous reorientation of the internal field. These take place upon cooling below T_s ≈ 100 K, until a spin freezing process occurs at T* ≈ 40 K. We argue this complex behavior to reflect a crossover driven by the in-plane uniaxial anisotropy, which is ultimately caused by its mixed-anion character. Our findings reinforce CrSBr as an important candidate for devices in the emergent field of two-dimensional magnetic materials.

Hard Ferromagnetism Down to the Thinnest Limit of Iron-Intercalated Tantalum Disulfide

Two-dimensional (2D) magnetic crystals hold promise for miniaturized and ultralow power electronic devices that exploit spin manipulation. In these materials, large, controllable magnetocrystalline anisotropy (MCA) is a prerequisite for the stabilization and manipulation of long-range magnetic order. In known 2D magnetic crystals, relatively weak MCA typically results in soft ferromagnetism. Here, we demonstrate that ferromagnetic order persists down to the thinnest limit of Fe_xTaS₂ (Fe-intercalated bilayer 2H-TaS₂) with giant coercivities up to 3 T. We prepare Fe-intercalated TaS₂ by chemical intercalation of van der Waals-layered 2H-TaS₂ crystals and perform variable-temperature transport, transmission electron microscopy, and confocal Raman spectroscopy measurements to shed new light on the coupled effects of dimensionality, degree of intercalation, and intercalant order/disorder on the hard ferromagnetic behavior of Fe_xTaS₂. More generally, we show that chemical intercalation gives access to a rich synthetic parameter space for low-dimensional magnets, in which magnetic properties can be tailored by the choice of the host material and intercalant identity/amount, in addition to the manifold distinctive degrees of freedom available in atomically thin, van der Waals crystals.

High-Quality Ferromagnet Fe3GeTe2 for High-Efficiency Electromagnetic Wave Absorption and Shielding with Wideband Radar Cross Section Reduction

A high-quality Fe₃GeTe₂ single crystal with good electrical, magnetic, and electromagnetic wave absorption and shielding properties was prepared in a large quantity (10 g level) by solid-phase sintering and recrystallization method, which would promote its in-depth research and practical application. It has good room-temperature electrical properties with a mobility of 42 cm²/V·s, a sheet (bulk) carrier concentration of +1.64 × 10¹⁸ /cm² (+3.28 × 10²⁰ /cm³), and a conductivity of 2196.35 S/cm. Also, a Curie temperature of 238 K indicates the high magnetic transition temperature and a paramagnetic Curie temperature of 301 K shows the large ferromagnetic-paramagnetic transition zone induced by the residual short-range ferromagnetic domains. Particularly, Fe₃GeTe₂ is in a loosely packed state when used as a loss agent; the electromagnetic wave absorption with a reflection loss of -34.7 dB at 3.66 GHz under thin thickness was shown. Meanwhile, the absorption band can be effectively regulated by varying the thickness. Moreover, Fe₃GeTe₂ in a close-packed state exhibits terahertz shielding values of 75.1 and 103.2 dB at very thin thicknesses of 70 and 380 μm, and the average shielding value is higher than 47 dB, covering the entire bandwidth from 0.1 to 3.0 THz. Furthermore, by using Fe₃GeTe₂ as a patch, the wideband radar cross-section can be effectively reduced by up to 33 dBsm. Resultantly, Fe₃GeTe₂ will be a promising candidate in the electromagnetic protection field.

Optical Modification of 2D Materials: Methods and Applications

2D materials are under extensive research due to their remarkable properties suitable for various optoelectronic, photonic, and biological applications, yet their conventional fabrication methods are typically harsh and cost-ineffective. Optical modification is demonstrated as an effective and scalable method for accurate and local in situ engineering and patterning of 2D materials in ambient conditions. This review focuses on the state of the art of optical modification of 2D materials and their applications. Perspectives for future developments in this field are also discussed, including novel laser tools, new optical modification strategies, and their emerging applications in quantum technologies and biotechnologies.

Moiré bands in twisted trilayer black phosphorene: effects of pressure and electric field

Twist-induced moiré bands and accompanied correlated phenomena have been extensively investigated in twisted hexagonal lattices with weak interlayer coupling. However, the formation of moiré bands in strongly coupled layered materials and their controlled tuning remain largely unexplored. Here, we systematically study the moiré bands in twisted trilayer black phosphorene (TTbP) and the influences of pressure and electric field on them. Moiré states can form in various TTbPs even when the twist angle is larger than 16° similar to that of twisted bilayer bP. However, different TTbPs show different localization patterns depending on the twisting layer, leading to distinct dipolar behaviors. While these moiré states become quasi-one-dimensional (1D) as the twist angle decreases, external pressure causes the crossover of moiré states from quasi-1D to 0D with a dramatic change in localization areas and greatly reduced bandwidth. Interestingly, compared to twisted bilayer and pristine bP, TTbPs show a much larger electric-field induced Stark effect, controllable by either the twist angle or twist layer. Our work thus demonstrates TTbP as an attractive platform to explore moiré-controlled electronic and optical properties, as well as tunable optoelectronic applications.

A multiferroic iron arsenide monolayer

Iron arsenide (FeAs) monolayers are known as a key component for building iron-based superconductors. Here, we predict by first-principles calculations that the FeAs monolayer is a highly stable and multiferroic material with coexisting ferroelasticity and antiferromagnetism. The ferroelasticity entails a reversible elastic strain of as large as 18% and an activation barrier of 20 meV per atom, attributed to a weak hybridization between Fe d and As p orbitals. The local moments of Fe atoms are oriented out-of-plane, so that the magnetic ordering is weakly coupled to the structural polarization. Interestingly, fluorination of the FeAs monolayer can align the local moments in parallel and reorient the easy axis along the in-plane direction. As such, the fluorinated FeAs monolayer is potentially a long-sought multiferroic material that enables a strong coupling between ferroelasticity and ferromagnetism.

Doping Independent Work Function and Stable Band Gap of Spinel Ferrites with Tunable Plasmonic and Magnetic Properties

Tuning optical or magnetic properties of nanoparticles, by addition of impurities, for specific applications is usually achieved at the cost of band gap and work function reduction. Additionally, conventional strategies to develop nanoparticles with a large band gap also encounter problems of phase separation and poor crystallinity at high alloying degree. Addressing the aforementioned trade-offs, here we report Ni-Zn nanoferrites with energy band gap (E_g) of ≈3.20 eV and a work function of ≈5.88 eV. While changes in the magnetoplasmonic properties of the Ni-Zn ferrite were successfully achieved with the incorporation of bismuth ions at different concentrations, there was no alteration of the band gap and work function in the developed Ni-Zn ferrite. This suggests that with the addition of minute impurities to ferrites, independent of their changes in the band gap and work function, one can tune their magnetic and optical properties, which is desired in a wide range of applications such as nanobiosensing, nanoparticle based catalysis, and renewable energy generation using nanotechnology.

Pressure-Enhanced Ferromagnetism in Layered CrSiTe3 Flakes

Despite recent advances in layered ferromagnets, ferromagnetic interactions in these materials are rather weak. Here, we report pressure-enhanced ferromagnetism in layered CrSiTe₃ flakes revealed by high-pressure magnetic circular dichroism measurements. Below ∼3 GPa, CrSiTe₃ undergoes a paramagnetic-to-ferromagnetic phase transition at ∼32 K, and the field-induced spin-flip in the ferromagnetic phase produces nearly zero hysteresis loops, demonstrating soft ferromagnetism. Above ∼4 GPa, a soft-to-hard ferromagnetic transition occurs, signaled by rectangular-shaped hysteresis loops with finite coercivity and remanent magnetization. Interestingly, as pressure increases, the Curie temperature and coercivity dramatically increase up to ∼138 K and 0.17 T at 7.8 GPa, respectively, in contrast to ∼36 K and 0.02 T at 4.6 GPa. It indicates a remarkable influence of pressure on exchange interactions, which is consistent with DFT calculations. The effective interaction between magnetic couplings and external pressure offers new opportunities in pursuit of high-temperature layered ferromagnets.