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Aydin K, Kanade C, Kanade VK, Bahit G, Ahn C, Kim T. Synthesis of multiphase MoS 2 heterostructures using temperature-controlled plasma-sulfurization for photodetector applications. NANOSCALE 2023; 15:17326-17334. [PMID: 37877424 DOI: 10.1039/d3nr01910a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
Two-dimensional (2D) materials exhibit outstanding performance in photodetectors because of their excellent optical and electronic properties. Specifically, 2D-MoS2, a transition metal dichalcogenide, is a prominent candidate for flexible and portable photodetectors based on its inherent phase-dependent tunable optical band gap properties. This research focused on creating high-performance photodetectors by carefully arranging out-of-plane 2D heterostructures. The process involved stacking different phases of MoS2 (1T and 2H) using controlled temperature during plasma-enhanced chemical vapor deposition. Among the various phase combinations, the best photocurrent response was obtained for the 1T/2H-MoS2 heterostructure, which exhibited an approximately two-fold higher photocurrent than the 2H/1T-MoS2 heterostructure and 2H/2H-MoS2 monostructure. The 1T/2H-MoS2 heterostructure exhibited a higher photoresponse than the monostructured MoS2 of the same thickness (1T/1T- and 2H/2H-MoS2, respectively). The effect of the stacking sequences of different phases was examined, and their photoperformances were investigated. This study demonstrates that phase engineering in 2D-MoS2 van der Waals heterostructures has significant potential for developing high-performance photodetectors.
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Affiliation(s)
- Kubra Aydin
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea.
- Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Chaitanya Kanade
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea.
- Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
- Centre for Materials for Electronics Technology, CMET Pune, Panchawati Rd, Mansarovar, Panchawati, Pashan, Pune, Maharashtra 411008, India
| | - Vinit Kaluram Kanade
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea.
- Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Gulgun Bahit
- School of Mechanical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Chisung Ahn
- Heat & Surface Technology R&D Department, Korea Institute of Industrial Technology, 113-58 Seohaean-ro, Siheung-si, Gyeonggi-do 15014, Republic of Korea.
| | - Taesung Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea.
- Department of Nano Science and Technology, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
- School of Mechanical Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
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Guan H, Zhao B, Zhao W, Ni Z. Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides. MATERIALS HORIZONS 2023; 10:1105-1120. [PMID: 36628937 DOI: 10.1039/d2mh01207c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.
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Affiliation(s)
- Huiyan Guan
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Bei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Weiwei Zhao
- School of Physics, Southeast University, Nanjing 211189, China.
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing 211189, China.
- Purple Mountain Laboratories, Nanjing 211111, China
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Xie J, Meng G, Chen B, Li Z, Yin Z, Cheng Y. Vapor-Liquid-Solid Growth of Morphology-Tailorable WS 2 toward P-Type Monolayer Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45716-45724. [PMID: 36183271 DOI: 10.1021/acsami.2c13812] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Although substantial efforts have been made, controllable synthesis of p-type WS2 remains a challenge. In this work, we employ NaCl as a seeding promoter to realize vapor-liquid-solid (VLS) growth of p-type WS2. Morphological evolution, including a one-dimensional (1D) nanowire to two-dimensional (2D) planar domain and 2D shape transition of WS2 domains, can be well-controlled by the growth temperature and sulfur introduction time. A high growth temperature is required to enable planar growth of 2D WS2, and a sulfur-rich environment is found to facilitate the growth of high-quality WS2. Raman and photoluminescence (PL) mappings demonstrate uniform crystallinity and high quantum efficiency of VLS-grown WS2. Moreover, monolayer WS2-based field-effect transistors (FETs) are fabricated, showing p-type conducting behavior, which is different from previous reported n-type FETs from WS2 grown by other methods. First-principles calculations show that the p-type behavior originates from the substitution of Na at the W site, which will form an additional acceptor level above the valence band maximum (VBM). This facile VLS growth method opens the avenue to realize the p-n WS2 homojunctions and p/n-WS2-based heterojunctions for monolayer wearable electronic, photonic, optoelectronic, and biosensing devices and should also be a great benefit to the development of 2D complementary metal-oxide-semiconductor (CMOS) circuit applications.
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Affiliation(s)
- Jinan Xie
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Baiyi Chen
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Zhe Li
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory2601, Australia
| | - Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy (CNRE), School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi710049, People's Republic of China
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Shafi AM, Ahmed F, Fernandez HA, Uddin MG, Cui X, Das S, Dai Y, Khayrudinov V, Yoon HH, Du L, Sun Z, Lipsanen H. Inducing Strong Light-Matter Coupling and Optical Anisotropy in Monolayer MoS 2 with High Refractive Index Nanowire. ACS APPLIED MATERIALS & INTERFACES 2022; 14:31140-31147. [PMID: 35763802 PMCID: PMC9284513 DOI: 10.1021/acsami.2c07705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Mixed-dimensional heterostructures combine the merits of materials of different dimensions; therefore, they represent an advantageous scenario for numerous technological advances. Such an approach can be exploited to tune the physical properties of two-dimensional (2D) layered materials to create unprecedented possibilities for anisotropic and high-performance photonic and optoelectronic devices. Here, we report a new strategy to engineer the light-matter interaction and symmetry of monolayer MoS2 by integrating it with one-dimensional (1D) AlGaAs nanowire (NW). Our results show that the photoluminescence (PL) intensity of MoS2 increases strongly in the mixed-dimensional structure because of electromagnetic field confinement in the 1D high refractive index semiconducting NW. Interestingly, the 1D NW breaks the 3-fold rotational symmetry of MoS2, which leads to a strong optical anisotropy of up to ∼60%. Our mixed-dimensional heterostructure-based phototransistors benefit from this and exhibit an improved optoelectronic device performance with marked anisotropic photoresponse behavior. Compared with bare MoS2 devices, our MoS2/NW devices show ∼5 times enhanced detectivity and ∼3 times higher photoresponsivity. Our results of engineering light-matter interaction and symmetry breaking provide a simple route to induce enhanced and anisotropic functionalities in 2D materials.
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Affiliation(s)
- Abde Mayeen Shafi
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Faisal Ahmed
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Henry A. Fernandez
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Aalto FI-00076, Finland
| | - Md Gius Uddin
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Xiaoqi Cui
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Susobhan Das
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Yunyun Dai
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Vladislav Khayrudinov
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Hoon Hahn Yoon
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Luojun Du
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Aalto FI-00076, Finland
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, Aalto
University, Tietotie 3, Espoo FI-02150, Finland
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Du M, Cui X, Yoon HH, Das S, Uddin MDG, Du L, Li D, Sun Z. Switchable Photoresponse Mechanisms Implemented in Single van der Waals Semiconductor/Metal Heterostructure. ACS NANO 2022; 16:568-576. [PMID: 34985864 PMCID: PMC8793132 DOI: 10.1021/acsnano.1c07661] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Accepted: 12/30/2021] [Indexed: 05/19/2023]
Abstract
van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been extensively studied for functional applications, and most of the reported devices work with sole mechanism. The emerging metallic 2D materials provide us new options for building functional vdW heterostructures via rational band engineering design. Here, we investigate the vdW semiconductor/metal heterostructure built with 2D semiconducting InSe and metallic 1T-phase NbTe2, whose electron affinity χInSe and work function ΦNbTe2 almost exactly align. Electrical characterization verifies exceptional diode-like rectification ratio of >103 for the InSe/NbTe2 heterostructure device. Further photocurrent mappings reveal the switchable photoresponse mechanisms of this heterostructure or, in other words, the alternative roles that metallic NbTe2 plays. Specifically, this heterostructure device works in a photovoltaic manner under reverse bias, whereas it turns to phototransistor with InSe channel and NbTe2 electrode under high forward bias. The switchable photoresponse mechanisms originate from the band alignment at the interface, where the band bending could be readily adjusted by the bias voltage. In addition, a conceptual optoelectronic logic gate is proposed based on the exclusive working mechanisms. Finally, the photodetection performance of this heterostructure is represented by an ultrahigh responsivity of ∼84 A/W to 532 nm laser. Our results demonstrate the valuable application of 2D metals in functional devices, as well as the potential of implementing photovoltaic device and phototransistor with single vdW heterostructure.
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Affiliation(s)
- Mingde Du
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
| | - Xiaoqi Cui
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
| | - Hoon Hahn Yoon
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
| | - Susobhan Das
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
| | - MD Gius Uddin
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
| | - Luojun Du
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
| | - Diao Li
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
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6
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Abstract
Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.
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Affiliation(s)
- Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
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7
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Wang Y, Pelgrin V, Gyger S, Uddin GM, Bai X, Lafforgue C, Vivien L, Jöns KD, Cassan E, Sun Z. Enhancing Si 3N 4 Waveguide Nonlinearity with Heterogeneous Integration of Few-Layer WS 2. ACS PHOTONICS 2021; 8:2713-2721. [PMID: 34553003 PMCID: PMC8447258 DOI: 10.1021/acsphotonics.1c00767] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Indexed: 06/13/2023]
Abstract
The heterogeneous integration of low-dimensional materials with photonic waveguides has spurred wide research interest. Here, we report on the experimental investigation and the numerical modeling of enhanced nonlinear pulse broadening in silicon nitride waveguides with the heterogeneous integration of few-layer WS2. After transferring a few-layer WS2 flake of ∼14.8 μm length, the pulse spectral broadening in a dispersion-engineered silicon nitride waveguide has been enhanced by ∼48.8% in bandwidth. Through numerical modeling, an effective nonlinear coefficient higher than 600 m-1 W-1 has been retrieved for the heterogeneous waveguide indicating an enhancement factor of larger than 300 with respect to the pristine waveguide at a wavelength of 800 nm. With further advances in two-dimensional material fabrication and integration techniques, on-chip heterostructures will offer another degree of freedom for waveguide engineering, enabling high-performance nonlinear optical devices, such as frequency combs and quantum light sources.
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Affiliation(s)
- Yuchen Wang
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo, 02150, Finland
| | - Vincent Pelgrin
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo, 02150, Finland
- Université
Paris-Saclay, CNRS, Centre de Nanosciences
et de Nanotechnologies, Palaiseau, 91120, France
| | - Samuel Gyger
- Department
of Applied Physics, KTH Royal Institute
of Technology, Stockholm, 114 28, Sweden
| | - Gius Md Uddin
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo, 02150, Finland
| | - Xueyin Bai
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo, 02150, Finland
| | - Christian Lafforgue
- Université
Paris-Saclay, CNRS, Centre de Nanosciences
et de Nanotechnologies, Palaiseau, 91120, France
| | - Laurent Vivien
- Université
Paris-Saclay, CNRS, Centre de Nanosciences
et de Nanotechnologies, Palaiseau, 91120, France
| | - Klaus D. Jöns
- Institute
for Photonic Quantum Systems (PhoQS), Center for Optoelectronics
and Photonics Paderborn (CeOPP) and Department of Physics, Paderborn University, 33098 Paderborn, Germany
| | - Eric Cassan
- Université
Paris-Saclay, CNRS, Centre de Nanosciences
et de Nanotechnologies, Palaiseau, 91120, France
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo, 02150, Finland
- QTF Centre
of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
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Jiang X, Chen F, Zhao S, Su W. Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides. CrystEngComm 2021. [DOI: 10.1039/d1ce01289d] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
This review summarizes recent advances in the controllable CVD growth of 2D TMDC vertical heterostructures under four different strategies.
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Affiliation(s)
- Xia Jiang
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Fei Chen
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Shichao Zhao
- College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
| | - Weitao Su
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, Zhejiang, P.R. China
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