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Jeon Y, Kim S, Seo J, Yoo H. Contributions of Light to Novel Logic Concepts Using Optoelectronic Materials. SMALL METHODS 2024; 8:e2300391. [PMID: 37231569 DOI: 10.1002/smtd.202300391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 04/29/2023] [Indexed: 05/27/2023]
Abstract
Instead of the current method of transmitting voltage or current signals in electronic circuit operation, light offers an alternative to conventional logic, allowing for the implementation of new logic concepts through interaction with light. This manuscript examines the use of light in implementing new logic concepts as an alternative to traditional logic circuits and as a future technology. This article provides an overview of how to implement logic operations using light rather than voltage or current signals using optoelectronic materials such as 2D materials, metal-oxides, carbon structures, polymers, small molecules, and perovskites. This review covers the various technologies and applications of using light to dope devices, implement logic gates, control logic circuits, and generate light as an output signal. Recent research on logic and the use of light to implement new functions is summarized. This review also highlights the potential of optoelectronic logic for future technological advancements.
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Affiliation(s)
- Yunchae Jeon
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Somi Kim
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam, 13120, Republic of Korea
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Lai PT, Chen CY, Lin HC, Chuang BY, Kuo KH, Greve CR, Su TK, Tan GH, Li CF, Huang SW, Hsiao KY, Herzig EM, Lu MY, Huang YC, Wong KT, Lin HW. Harnessing 2D Ruddlesden-Popper Perovskite with Polar Organic Cation for Ultrasensitive Multibit Nonvolatile Transistor-Type Photomemristors. ACS NANO 2023; 17:25552-25564. [PMID: 38096149 DOI: 10.1021/acsnano.3c09595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Photomemristors have been regarded as one of the most promising candidates for next-generation hardware-based neuromorphic computing due to their potentials of fast data transmission and low power consumption. However, intriguingly, so far, photomemristors seldom display truly nonvolatile memory characteristics with high light sensitivity. Herein, we demonstrate ultrasensitive photomemristors utilizing two-dimensional (2D) Ruddlesden-Popper (RP) perovskites with a highly polar donor-acceptor-type push-pull organic cation, 4-(5-(2-aminoethyl)thiophen-2-yl)benzonitrile+ (EATPCN+), as charge-trapping layers. High linearity and almost zero-decay retention are observed in (EATPCN)2PbI4 devices, which are very distinct from that of the traditional 2D RP perovskite devices consisting of nonpolar organic cations, such as phenethylamine+ (PEA+) and octylamine+ (OA+), and traditional 3D perovskite devices consisting of methylamine+ (MA+). The 2-fold advantages, including desirable spatial crystal arrangement and engineered energetic band alignment, clarify the mechanism of superior performance in (EATPCN)2PbI4 devices. The optimized (EATPCN)2PbI4 photomemristor also shows a memory window of 87.9 V and an on/off ratio of 106 with a retention time of at least 2.4 × 105 s and remains unchanged after >105 writing-reading-erasing-reading endurance cycles. Very low energy consumptions of 1.12 and 6 fJ for both light stimulation and the reading process of each status update are also demonstrated. The extremely low power consumption and high photoresponsivity were simultaneously achieved. The high photosensitivity surpasses that of a state-of-the-art commercial pulse energy meter by several orders of magnitude. With their outstanding linearity and retention, rabbit images have been rebuilt by (EATPCN)2PbI4 photomemristors, which truthfully render the image without fading over time. Finally, by utilizing the powerful ∼8 bits of nonvolatile potentiation and depression levels of (EATPCN)2PbI4 photomemristors, the accuracies of the recognition tasks of CIFAR-10 image classification and MNIST handwritten digit classification have reached 89% and 94.8%, respectively. This study represents the first report of utilizing a functional donor-acceptor type of organic cation in 2D RP perovskites for high-performance photomemristors with characteristics that are not found in current halide perovskites.
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Affiliation(s)
- Po-Ting Lai
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Cheng-Yueh Chen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hao-Cheng Lin
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Bo-Yuan Chuang
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
| | - Kai-Hua Kuo
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
| | - Christopher R Greve
- Dynamics and Structure Formation─Herzig Group, University of Bayreuth, 95447 Bayreuth, Germany
| | - Tsung-Kai Su
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Guang-Hsun Tan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chia-Feng Li
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
| | - Sheng-Wen Huang
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
| | - Kai-Yuan Hsiao
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Eva M Herzig
- Dynamics and Structure Formation─Herzig Group, University of Bayreuth, 95447 Bayreuth, Germany
| | - Ming-Yen Lu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Ching Huang
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
| | - Ken-Tsung Wong
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
| | - Hao-Wu Lin
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
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Sánchez Vergara ME, Hernández Méndez JA, González Verdugo D, Giammattei Funes IM, Lozada Flores O. Influence of the Polymeric Matrix on the Optical and Electrical Properties of Copper Porphine-Based Semiconductor Hybrid Films. Polymers (Basel) 2023; 15:3125. [PMID: 37514514 PMCID: PMC10386378 DOI: 10.3390/polym15143125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Revised: 07/20/2023] [Accepted: 07/20/2023] [Indexed: 07/30/2023] Open
Abstract
In this study, we assessed the electrical and optical behavior of semiconductor hybrid films fabricated from octaethyl-21H,23H-porphine copper (CuP), embedded in polymethylmethacrylate (PMMA), and polystyrene (PS). The hybrid films were characterized structurally and morphologically using infrared spectroscopy (IR), atomic force microscopy (AFM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Subsequently, the PMMA:CuP and PS:CuP hybrid films were evaluated optically by UV-vis spectroscopy, as well as electrically, with the four-point collinear method. Hybrid films present a homogeneous and low roughness morphology. In addition, the PS matrix allows the crystallization of the porphin, while PMMA promotes the amorphous structure in CuP. The polymeric matrix also affects the optical behavior of the films, since the smallest optical gap (2.16 eV) and onset gap (1.89 eV), and the highest transparency are obtained in the film with a PMMA matrix. Finally, the electrical behavior in hybrid films is also affected by the matrix: the largest amount of current carried is approximately 0.01 A for the PS:CuP film, and 0.0015 A for the PMMA:CuP film. Thanks to the above properties, hybrid films are promising candidates for use in optoelectronic devices.
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Affiliation(s)
- Maria Elena Sánchez Vergara
- Facultad de Ingeniería, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Mexico City 52786, Mexico
| | - Joaquín André Hernández Méndez
- Facultad de Ingeniería, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Mexico City 52786, Mexico
| | - Daniela González Verdugo
- Facultad de Ingeniería, Universidad Anáhuac México, Avenida Universidad Anáhuac 46, Col. Lomas Anáhuac, Mexico City 52786, Mexico
| | | | - Octavio Lozada Flores
- Facultad de Ingeniería, Universidad Panamericana, Augusto Rodin 498, Mexico City 03920, Mexico
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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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Ercan E, Lin Y, Chen C, Fang Y, Yang W, Yang Y, Chen W. Realizing fast photoinduced recovery with polyfluorene‐
block
‐poly
(vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices. JOURNAL OF POLYMER SCIENCE 2021. [DOI: 10.1002/pol.20210393] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Chun‐Kai Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yi‐Kai Fang
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
| | - Wei‐Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yun‐Fang Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Wen‐Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
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