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Kar S, Ray SJ. Machine Learning-Assisted Exploration of Intrinsically Spin-Ordered Two-Dimensional (2D) Nanomagnets. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36745-36751. [PMID: 38975962 DOI: 10.1021/acsami.4c01152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2024]
Abstract
The existence of spontaneous spin-ordering in two-dimensional (2D) nanomagnets holds significant importance due to their several unique and promising properties that distinguish them from conventional 2D materials. In recent times, machine learning (ML) has emerged as a powerful tool for effectively exploring and identifying the optimal 2D materials for specific applications or properties within a limited span of time. Here, we have introduced ML-accelerated approaches to specifically estimate the properties, such as the HSE bandgap and magnetoanisotropic energy (MAE) of 2D magnetic materials. Supervised ML algorithms were employed to derive the descriptors that are capable of predicting the properties of intrinsic 2D magnetic materials. Furthermore, the feature selection score is also calculated to reduce the feature space complexity and improve the model accuracy. The input features were obtained from the C2DB database, and models were constructed using linear regression, Lasso, decision tree, random forest, XG Boost, and support vector machine algorithms. The random forest model predicted the HSE band gaps with an unprecedented low root-mean-square error (RMSE) of 0.22 eV, while the linear regression gives the best fit with RMSEs of 0.25 and 0.22 meV for the MAE(x) and MAE(y), respectively. Therefore, the integration of interpretable analytical models with density functional theory offers a swift and reliable approach for uncovering the properties of intrinsic 2D magnetic materials. This collaborative methodology not only ensures speed in analysis but also enriches the material space.
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Affiliation(s)
- Subhasmita Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - Soumya Jyoti Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
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Kumari P, Rani S, Kar S, Kamalakar MV, Ray SJ. Strain-controlled spin transport in a two-dimensional (2D) nanomagnet. Sci Rep 2023; 13:16599. [PMID: 37789039 PMCID: PMC10547692 DOI: 10.1038/s41598-023-43025-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 09/18/2023] [Indexed: 10/05/2023] Open
Abstract
Semiconductors with controllable electronic transport coupled with magnetic behaviour, offering programmable spin arrangements present enticing potential for next generation intelligent technologies. Integrating and linking these two properties has been a long standing challenge for material researchers. Recent discoveries in two-dimensional (2D) magnet shows an ability to tune and control the electronic and magnetic phases at ambient temperature. Here, we illustrate controlled spin transport within the magnetic phase of the 2D semiconductor CrOBr and reveal a substantial connection between its magnetic order and charge carriers. First, we systematically analyse the strain-induced electronic behaviour of 2D CrOBr using density functional theory calculations. Our study demonstrates the phase transition from a magnetic semiconductor → half metal → magnetic metal in the material under strain application, creating intriguing spin-resolved conductance with 100% spin polarisation and spin-injection efficiency. Additionally, the spin-polarised current-voltage (I-V) trend displayed conductance variations with high strain-assisted tunability and a peak-to-valley ratio as well as switching efficiency. Our study reveals that CrOBr can exhibit highly anisotropic behaviour with perfect spin filtering, offering new implications for strain engineered magneto-electronic devices.
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Affiliation(s)
- P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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O'Neill A, Rahman S, Zhang Z, Schoenherr P, Yildirim T, Gu B, Su G, Lu Y, Seidel J. Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr 2Ge 2Te 6. ACS NANO 2023; 17:735-742. [PMID: 36546693 DOI: 10.1021/acsnano.2c10209] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Emergent magnetism in van der Waals materials offers exciting opportunities in fabricating atomically thin spintronic devices. One pertinent obstacle has been the low transition temperatures (Tc) inherent to these materials, precluding room temperature applications. Here, we show that large structural gradients found in highly strained nanoscale wrinkles in Cr2Ge2Te6 (CGT) lead to significant increases of Tc. Magnetic force microscopy was utilized in characterizing multiple strained CGT nanostructures leading to experimental evidence of elevated Tc, depending on the strain percentage estimated from finite element analysis. Our findings are further supported by ab initio and DFT studies of the strained material, which indicates that strain directly augments the ferromagnetic coupling between Cr atoms in CGT, influenced by superexchange interaction; this provides strong insight into the mechanism of the enhanced magnetism and Tc.
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Affiliation(s)
- Adam O'Neill
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW2052, Australia
| | - Sharidya Rahman
- School of Engineering, College of Science and Computer Science, The Australian National University, Canberra, ACT2601, Australia
| | - Zhen Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijng100049, China
| | - Peggy Schoenherr
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney, NSW2052, Australia
- CSIRO Mineral Resources, Lucas Heights, NSW2234, Australia
| | - Tanju Yildirim
- Center for Functional Sensor & Actuator (CFSN), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki305-0044, Japan
| | - Bo Gu
- Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijng100190, China
- Physical Science Laboratory, Huairou National Comprehensive Science Center, Beijing101400, China
| | - Gang Su
- Kavli Institute for Theoretical Sciences, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijng100190, China
- Physical Science Laboratory, Huairou National Comprehensive Science Center, Beijing101400, China
| | - Yuerui Lu
- School of Engineering, College of Science and Computer Science, The Australian National University, Canberra, ACT2601, Australia
- ARC Centre of Excellence for Quantum Computation and Communication Technology, the Australian National University, Canberra, ACT2601, Australia
| | - Jan Seidel
- School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney, NSW2052, Australia
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