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Kumari P, Majumder S, Kar S, Rani S, Nair AK, Kumari K, Kamalakar MV, Ray SJ. An all phosphorene lattice nanometric spin valve. Sci Rep 2024; 14:9138. [PMID: 38644366 PMCID: PMC11033266 DOI: 10.1038/s41598-024-58589-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Accepted: 04/01/2024] [Indexed: 04/23/2024] Open
Abstract
Phosphorene is a unique semiconducting two-dimensional platform for enabling spintronic devices integrated with phosphorene nanoelectronics. Here, we have designed an all phosphorene lattice lateral spin valve device, conceived via patterned magnetic substituted atoms of 3d-block elements at both ends of a phosphorene nanoribbon acting as ferromagnetic electrodes in the spin valve. Through First-principles based calculations, we have extensively studied the spin-dependent transport characteristics of the new spin valve structures. Systematic exploration of the magnetoresistance (MR) of the spin valve for various substitutional atoms and bias voltage resulted in a phase diagram offering a colossal MR for V and Cr-substitutional atoms. Such MR can be directly attributed to their specific electronic structure, which can be further tuned by a gate voltage, for electric field controlled spin valves. The spin-dependent transport characteristics here reveal new features such as negative conductance oscillation and switching of the sign of MR due to change in the majority spin carrier type. Our study creates possibilities for the design of nanometric spin valves, which could enable integration of memory and logic elements for all phosphorene 2D processors.
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Affiliation(s)
- P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Majumder
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - A K Nair
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - K Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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Sahoo S, Kumari P, Som NN, Kar S, Ahuja R, Ray SJ. Remarkable enhancement of the adsorption and diffusion performance of alkali ions in two-dimensional (2D) transition metal oxide monolayers via Ru-doping. Sci Rep 2024; 14:4371. [PMID: 38388641 PMCID: PMC10883979 DOI: 10.1038/s41598-024-53966-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Accepted: 02/07/2024] [Indexed: 02/24/2024] Open
Abstract
Transition metal oxides (TMO) are the preferred materials for metal ion battery cathodes because of their high redox potentials and good metal-ion intercalation capacity, which serve as an outstanding replacement for layered sulphide. In this work, using first-principles calculations based on Density functional theory approach, we explored the structural and electronic properties which comprise of adsorption and diffusion behaviour along with the analysis of voltage profile and storage capacity of Ru doped two-dimensional transition metal oxide [Formula: see text], [Formula: see text], and [Formula: see text] monolayers. The adsorption of alkali ions (Li, Na) to the surface of TMOs is strengthened by Ru-atom doping. Ru doping enhanced the adsorption energy of Li/Na-ion by 25%/11% for [Formula: see text], 8%/13% for [Formula: see text], and 10%/11% [Formula: see text] respectively. The open circuit voltage (OCV) also increases due to the high adsorption capacity of doped Monolayers. Ru doping makes the semiconducting TMOs conduct, which is suitable for battery application. As alkali ion moves closer to the dopant site, the adsorption energy increases. When alkali ions are close to the vicinity of doping site, their diffusion barrier decrease and rises as they go further away. Our current findings will be useful in finding ways to improve the storage performance of 2D oxide materials for application in energy harvesting and green energy architecture.
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Affiliation(s)
- Shubham Sahoo
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - Narayan N Som
- Laboratory Nanostructures Institute of High Pressure Physics, Polish Academy of Sciences Sokolowska, Warsaw, Poland
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - Rajeev Ahuja
- Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab, 140001, India
- Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, SE-75120, Uppsala, Sweden
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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Kumari P, Rani S, Kar S, Kamalakar MV, Ray SJ. Strain-controlled spin transport in a two-dimensional (2D) nanomagnet. Sci Rep 2023; 13:16599. [PMID: 37789039 PMCID: PMC10547692 DOI: 10.1038/s41598-023-43025-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 09/18/2023] [Indexed: 10/05/2023] Open
Abstract
Semiconductors with controllable electronic transport coupled with magnetic behaviour, offering programmable spin arrangements present enticing potential for next generation intelligent technologies. Integrating and linking these two properties has been a long standing challenge for material researchers. Recent discoveries in two-dimensional (2D) magnet shows an ability to tune and control the electronic and magnetic phases at ambient temperature. Here, we illustrate controlled spin transport within the magnetic phase of the 2D semiconductor CrOBr and reveal a substantial connection between its magnetic order and charge carriers. First, we systematically analyse the strain-induced electronic behaviour of 2D CrOBr using density functional theory calculations. Our study demonstrates the phase transition from a magnetic semiconductor → half metal → magnetic metal in the material under strain application, creating intriguing spin-resolved conductance with 100% spin polarisation and spin-injection efficiency. Additionally, the spin-polarised current-voltage (I-V) trend displayed conductance variations with high strain-assisted tunability and a peak-to-valley ratio as well as switching efficiency. Our study reveals that CrOBr can exhibit highly anisotropic behaviour with perfect spin filtering, offering new implications for strain engineered magneto-electronic devices.
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Affiliation(s)
- P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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Kar S, Kumari P, Kamalakar MV, Ray SJ. Twist-assisted optoelectronic phase control in two-dimensional (2D) Janus heterostructures. Sci Rep 2023; 13:13696. [PMID: 37608024 PMCID: PMC10444812 DOI: 10.1038/s41598-023-39993-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 08/03/2023] [Indexed: 08/24/2023] Open
Abstract
Atomically thin two-dimensional (2D) Janus materials and their Van der Waals heterostructures (vdWHs) have emerged as a new class of intriguing semiconductor materials due to their versatile application in electronic and optoelectronic devices. Herein, We have invstigated most probable arrangements of different inhomogeneous heterostructures employing one layer of transition metal dichalcogenide, TMD (MoS2, WS2, MoSe2, and WSe2) piled on the top of Janus TMD (MoSeTe or WSeTe) and investigated their structural, electronic as well as optical properties through first-principles based calculations. After that, we applied twist engineering between the monolayers from 0[Formula: see text] 60[Formula: see text] twist angle, which delivers lattice reconstruction and improves the performance of the vdWHs due to interlayer coupling. The result reveals that all the proposed vdWHs are dynamically and thermodynamically stable. Some vdWHs such as MoS2/MoSeTe, WS2/WSeTe, MoS2/WSeTe, MoSe2/MoSeTe, and WS2/MoSeTe exhibit direct bandgap with type-II band alignment at some specific twist angle, which shows potential for future photovoltaic devices. Moreover, the electronic property and carrier mobility can be effectively tuned in the vdWHs compared to the respective monolayers. Furthermore, the visible optical absorption of all the Janus vdWHs at [Formula: see text] = 0[Formula: see text] can be significantly enhanced due to the weak inter-layer coupling and redistribution of the charges. Therefore, the interlayer twisting not only provides an opportunity to observe new exciting properties but also gives a novel route to modulate the electronic and optoelectronic properties of the heterostructure for practical applications.
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Affiliation(s)
- S Kar
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - P Kumari
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, 75120, Uppsala, Sweden.
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bihta, 801103, India.
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Nair AK, Ray SJ. Electronic phase-crossover and room temperature ferromagnetism in a two-dimensional (2D) spin lattice. RSC Adv 2020; 11:946-952. [PMID: 35423672 PMCID: PMC8693316 DOI: 10.1039/d0ra09726h] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 11/26/2020] [Indexed: 12/29/2022] Open
Abstract
Tuning of system properties such as electronic and magnetic behaviour through various engineering techniques is necessary for optoelectronic and spintronic applications. In our current work, we employ first-principles methodologies along with Monte-Carlo simulations to comprehensively study the electronic and magnetic behaviour of 2-dimensional (2D) Cr2Ge2Te6 (Tc = 61 K), uncovering the impact of strain and electric field on the material. In the presence of strain, we were able to achieve high temperature magnetic ordering in the layer along with observable phase crossover in the electronic state of the system, where the system exhibited transference from semiconducting to half-metallic state. Finally, on coupling strain and electric field remarkable increase in Curie temperature (Tc) ∼ 331 K (above 5-fold enhancement from pristine configuration) was observed, which is very well above room temperature. Our inferences have shed light on a relatively new type of coupling method involving strain and electric field which may have tremendous implications in the development of 2D spintronic architecture. In the presence of strain, high temperature magnetic ordering in Cr2Ge2Te6 was observed with electronic phase crossover from semiconducting to half-metallic state. On coupling strain and electric field, the Curie temperature reaches 331 K.![]()
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Affiliation(s)
- A K Nair
- Department of Physics, Indian Institute of Technology Patna Bihta 801106 India
| | - S J Ray
- Department of Physics, Indian Institute of Technology Patna Bihta 801106 India
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Nair AK, Rani S, Kamalakar MV, Ray SJ. Bi-stimuli assisted engineering and control of magnetic phase in monolayer CrOCl. Phys Chem Chem Phys 2020; 22:12806-12813. [PMID: 32469019 DOI: 10.1039/d0cp01204a] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Magnetic phase control and room temperature magnetic stability in two-dimensional (2D) materials are indispensable for realising advanced spintronic and magneto-electronic functions. Our current work employs first-principles calculations to comprehensively study the magnetic behaviour of 2D CrOCl, uncovering the impact of strain and electric field on the material. Our studies have revealed that uniaxial strain leads to the feasibility of room temperature ferromagnetism in the layer and also detected the occurrence of a ferromagnetic → antiferromagnetic phase transition in the system, which is anisotropic along the armchair and zigzag directions. Beyond such a strain effect, the coupling of strain and electric field leads to a remarkable enhancement of the Curie temperature (Tc) ∼ 450 K in CrOCl. These predictions based on our detailed simulations show the prospect of multi-stimuli magnetic phase control, which could have great significance for realizing magneto-mechanical sensors.
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Affiliation(s)
- A K Nair
- Department of Physics, Indian Institute of Technology Patna, Bihta 801106, India.
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Abstract
Recent reports on the two-dimensional (2D) material CrOCl revealed magnetic ordering and spin polarisation with Curie Temperature T c ∼ 160 K, values higher than most diluted magnetic semiconductors. Here, we investigate the uniaxial and biaxial strain-dependent electronic and transport properties of CrOCl monolayer using first-principles based calculations. The calculated Young's modulus indicates high mechanical flexibility for the application of high strain. Our study shows that strain can induce phase changes from a bipolar magnetic semiconductor → half metal → magnetic metal in the material, leading to interesting spin-resolved conductance with 100% spin filtering. Furthermore, the current-voltage (I-V) response showed conductance fluctuations, characterised by peak to valley ratio and switching efficiency offering high strain assisted tunability. Overall, CrOCl shows a highly anisotropic behaviour with the material displaying 100% spin polarisation in the tensile strain region. The electronic, transport and mechanical properties indicate that CrOCl is a versatile 2D material with multi-phase capabilities having promising applications for future nanospintronic devices.
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Affiliation(s)
- S Rani
- Department of Physics, Indian Institute of Technology Patna, Bihta 801106, India
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Kumari P, Majumder S, Rani S, Nair AK, Kumari K, Kamalakar MV, Ray SJ. High efficiency spin filtering in magnetic phosphorene. Phys Chem Chem Phys 2020; 22:5893-5901. [DOI: 10.1039/c9cp05390e] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
We present high efficiency spin filtering behaviour in magnetically rendered phosphorene, doped with various 3d block elements. A phase diagram was obtained depicting the presence of various electronic and magnetic states.
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Affiliation(s)
- P. Kumari
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - S. Majumder
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - S. Rani
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - A. K. Nair
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - K. Kumari
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | | | - S. J. Ray
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
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Abstract
The current observation demonstrates the usefulness of the two-dimensional C3N system as a next generation bio-sensor for the sequencing of various nucleobases, offering new leads for future developments in bioelectronics, superior sensing architectures and sustainable designs.
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Affiliation(s)
- S. Rani
- Department of Physics
- Indian Institute of Technology Patna
- Bihta
- India
| | - S. J. Ray
- Department of Physics
- Indian Institute of Technology Patna
- Bihta
- India
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Abstract
Phosphorene is a unique two-dimensional semiconductor that has huge potential for nanoelectronic and spintronic applications. In the presence of various 3d block elements, remarkable feasibility of ferromagnetism and antiferromagnetism up to a large temperature ∼1150 K was observed.
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Affiliation(s)
- A. K. Nair
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | - P. Kumari
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
| | | | - S. J. Ray
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
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12
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Abstract
We investigated the strain phase diagram of phosphorene and observed strain-tuneable conductance oscillations that are robust against doping and defects.
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Affiliation(s)
- S. J. Ray
- Department of Physics
- Indian Institute of Technology Patna
- Bihta 801106
- India
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13
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Abstract
Phosphorene is a newly unveiled two-dimensional crystal with immense potential for nanoelectronic and optoelectronic applications. Its unique electronic structure and two dimensionality also present opportunities for single electron devices. Here we report the behaviour of a single electron transistor (SET) made of a phosphorene island, explored for the first time using ab initio calculations. We find that the band gap and the charging energy decrease monotonically with increasing layer numbers due to weak quantum confinement. When compared to two other novel 2D crystals such as graphene and MoS2, our investigation reveals larger adsorption energies of gas molecules on phosphorene, which indicates better a sensing ability. The calculated charge stability diagrams show distinct changes in the presence of an individual molecule which can be applied to detect the presence of different molecules with sensitivity at a single molecular level. The higher charging energies of the molecules within the SET display operational viability at room temperature, which is promising for possible ultra sensitive detection applications.
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Affiliation(s)
- S J Ray
- Department of Physics, Indian Institute of Technology Patna, Bitha, 801 103, Bihar, India
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Heron DOG, Ray SJ, Lister SJ, Aegerter CM, Keller H, Kes PH, Menon GI, Lee SL. Muon-spin rotation measurements of an unusual vortex-glass phase in the layered superconductor Bi2.15Sr1.85CaCu2O8+δ. Phys Rev Lett 2013; 110:107004. [PMID: 23521284 DOI: 10.1103/physrevlett.110.107004] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2012] [Indexed: 06/01/2023]
Abstract
Muon-spin rotation measurements, performed on the mixed state of the classic anisotropic superconductor Bi(2.15)Sr(1.85)CaCu(2)O(8+δ), obtain quantities directly related to two- and three-body correlations of vortices in space. A novel phase diagram emerges from such local probe measurements of the bulk, revealing an unusual glassy state at intermediate fields which appears to freeze continuously from the equilibrium vortex liquid but differs both from the lattice and the conventional high-field vortex glass state in its structure.
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Affiliation(s)
- D O G Heron
- School of Physics and Astronomy, University of St Andrews, Fife KY16 9SS, United Kingdom
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Ray SJ, Counce RM, Morton SA. Effects of Electrolyte Concentration on Surfactant Adsorption to a QCM Immersed in Surfactant + Electrolyte Solutions. SEP SCI TECHNOL 2008. [DOI: 10.1080/01496390802152003] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Submit a Manuscript] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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Mahoney PP, Ray SJ, Li G, Hieftje GM. Preliminary investigation of electrothermal vaporization sample introduction for inductively coupled plasma time-of-flight mass spectrometry. Anal Chem 1999; 71:1378-83. [PMID: 10204039 DOI: 10.1021/ac9811625] [Citation(s) in RCA: 36] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The coupling of an electrothermal vaporization (ETV) apparatus to an inductively coupled plasma time-of-flight mass spectrometer (ICP-TOFMS) is described. The ability of the ICP-TOFMS to produce complete elemental mass spectra at high repetition rates is experimentally demonstrated. A signal-averaging data acquisition board is employed to rapidly record complete elemental spectra throughout the vaporization stage of the ETV temperature cycle; a solution containing 34 elements is analyzed. The reduction of both molecular and atomic isobaric interferences through the temperature program of the furnace is demonstrated. Isobaric overlaps among the isotopes of cadmium, tin, and indium are resolved by exploiting differences in the vaporization characteristics of the elements. Figures of merit for the system are defined with several different data acquisition schemes capable of operating at the high repetition rate of the TOF instrument. With the use of both ion counting and a boxcar averager, the dynamic range is shown to be linear over a range of at least 6 orders of magnitude. A pair of boxcar averagers are used to measure the isotope ratio for silver with a precision of 1.9% RSD, despite a cycle-to-cycle precision of 19% RSD. Detection limits of 10-80 fg are calculated for seven elements, based upon a 10-microL injection.
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Affiliation(s)
- P P Mahoney
- Department of Chemistry, Indiana University, Bloomington 47405, USA
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